KR20080109368A - Fuse circuit of semiconductor apparatus - Google Patents
Fuse circuit of semiconductor apparatus Download PDFInfo
- Publication number
- KR20080109368A KR20080109368A KR1020070057583A KR20070057583A KR20080109368A KR 20080109368 A KR20080109368 A KR 20080109368A KR 1020070057583 A KR1020070057583 A KR 1020070057583A KR 20070057583 A KR20070057583 A KR 20070057583A KR 20080109368 A KR20080109368 A KR 20080109368A
- Authority
- KR
- South Korea
- Prior art keywords
- signal
- fuse
- identification information
- output
- output unit
- Prior art date
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Images
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/44—Indication or identification of errors, e.g. for repair
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/785—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes
- G11C29/787—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes using a fuse hierarchy
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
- G11C29/812—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout using a reduced amount of fuses
Landscapes
- Semiconductor Integrated Circuits (AREA)
Abstract
The present invention provides a fuse signal output unit for outputting a fuse signal according to whether the fuse is cut or a test signal; An option selection signal output unit configured to output the fuse signal as an option selection signal according to whether an identification information output signal is activated; And an identification information output unit configured to output the fuse signal as identification information according to whether the identification information output signal is activated.
Description
1 is a circuit diagram of a fuse circuit for design analysis of a semiconductor device according to the prior art;
2 is a circuit diagram of a fuse circuit for identification information of a semiconductor device according to the prior art;
3 is a circuit diagram of a fuse circuit of a semiconductor device according to the present invention.
<Description of Symbols for Main Parts of Drawings>
100: fuse signal output unit 200: option selection signal output unit
300: identification information output unit 400: output control unit
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to semiconductor devices and, more particularly, to a fuse circuit that can be used for other purposes than the original use.
The semiconductor device according to the prior art has a plurality of design analysis fuse circuits and a plurality of identification information fuse circuits.
The design analysis fuse circuit is a circuit for selectively activating one of a base circuit and an option circuit for replacing the base circuit during design analysis.
As shown in FIG. 1, a fuse circuit for design analysis of a semiconductor device according to the related art includes a plurality of transistors M1 to M3, a fuse, a plurality of inverters IV1 and IV2, and a NOR gate NR1. It is provided. An option selection signal output from the inverter IV2 is used as a signal for selecting one of the basic circuit and the option circuit to operate.
When the test signal TM is activated (for example, high level) by going to the test mode, the base selection signal (Base Selection) is deactivated to the low level and the option selection signal (Option Selection) is activated to the high level. When the option selection signal is activated, the operation of the basic circuit is stopped while the option circuit is operated.
When the test mode ends, the test signal TM is inactivated. As the test signal TM is deactivated, the option selection signal is deactivated and a basic circuit is operated instead of the option circuit.
If you want the option circuit to operate during normal operation after the test is completed, you can revise using the metal option.
Thereafter, in the mass production stage, the above-described design analysis fuse circuit is not required.
The fuse circuit for identification information stores identification information, that is, die ID (DID) for tracking wafer test information, wafer map, and experimental results even after packaging. It is a circuit for doing this. The die ID is composed of a plurality of bits, and includes a lot number, a wafer number, a coordinate (Net Die), and other information.
As shown in FIG. 2, a fuse circuit for identification information according to the related art includes a plurality of transistors M11 to M15, a fuse, a plurality of inverters IV11 to IV15, and a NOR gate NR11. .
When the identification information output signal TDID is activated (for example, at a high level), the fuse circuit for identifying information may identify the identification information DID according to whether the fuse is cut. Output to the outside of the semiconductor device through.
When the identification information output signal TDID is activated while the fuse is cut, the identification information DID is output through the data line GIO at a low level. When the identification information output signal TDID is activated while the fuse is not cut, the identification information DID is output through the data line GIO at a high level.
The conventional semiconductor device described above has a problem in that it is impossible to add a fuse circuit for adding identification information when design and analysis are completed and entered a mass production process. Of course, a sufficient number of identification fuse circuits can be added at the time of design, but there is a problem of greatly increasing the layout area, which is very inefficient when no mass production is required.
SUMMARY OF THE INVENTION An object of the present invention is to provide a fuse circuit of a semiconductor device capable of adding identification information without a large increase in layout area even after mass production.
A fuse circuit of a semiconductor device according to the present invention includes a fuse signal output unit for outputting a fuse signal according to whether a fuse is cut or a test signal; An option selection signal output unit configured to output the fuse signal as an option selection signal according to whether an identification information output signal is activated; And an identification information output unit configured to output the fuse signal as identification information according to whether the identification information output signal is activated.
A fuse circuit of a semiconductor device according to the present invention may include a plurality of first fuse circuit units configured to output prestored identification information in response to activation of an identification information output signal; And a plurality of second fuse circuits configured to selectively output identification information set according to whether an option selection signal or a fuse is cut for selectively operating one of the basic circuit and the option circuit according to whether the identification information output signal is activated. It is another feature.
Hereinafter, a preferred embodiment of a fuse circuit of a semiconductor device according to the present invention will be described with reference to the accompanying drawings.
A plurality of fuse circuits of the semiconductor device according to the present invention are provided, and each fuse circuit has a fuse
The fuse
The option selection
The identification
The output control unit 400 receives the identification information output signal TDID and receives a first transmission gate TG1 of the option selection
The operation of the fuse circuit of the semiconductor device according to the present invention configured as described above is as follows.
The identification information output signal TDID maintains a deactivation level (eg, a low level) when there is no identification information output command from the outside, and activates a level (eg, a high level when an identification information output command is input externally. Transitions to).
During the design analysis test, the test signal TM is activated to a high level. Since the test signal TM is at a high level, the fuse signal Option Selection / DID is output at a high level.
The identification information output signal TDID is deactivated to a low level during the design analysis test. Since the identification information output signal TDID is at a low level, the first transmission gate TG1 of the selection
The fuse signal Option Selection / DID is output as a delayed option selection signal Option Selection_D through the third inverter IV23, the first transmission gate TG1, and the fourth inverter IV24.
An option circuit is selected according to the delayed option selection signal Option Selection_D. The option circuit is operated in the manner described above to perform a design analysis test. When the design analysis test is completed, the test signal TM becomes a low level.
On the other hand, when the identification information (DID) is set through the separate identification information setting fuse circuit may occur when it is necessary to add the identification information (DID).
When the design analysis test is completed, the fuse
When the additional setting of the identification information DID is required, the fuse of the fuse
When the identification information output command is input in the state where the above-described additional setting of the identification information DID is completed, the identification information output signal TDID is activated to a high level.
Since the identification information output signal TDID is at a high level, the first transmission gate TG1 of the selection
By having the first transmission gate (TG1) and turned on when the identification information (DID) output, it is outputted as a delayed option selection signal (Option Selection_D) that is different from the design analysis test according to the optional fuse cutting prevent. In other words, the logic level of the delayed option selection signal Option Selection_D is changed to prevent the basic circuit or the option circuit from malfunctioning.
The fuse
The fuse signal Option Selection / DID is output as identification information DID through the turned-on second transmission gate TG2.
The identification information DID is driven to the logic level of the data line GIO through the driver 310 and output to the data line GIO.
The identification information DID is read from the outside of the semiconductor device through the data line GIO to perform failure analysis.
As those skilled in the art to which the present invention pertains may implement the present invention in other specific forms without changing the technical spirit or essential features, the embodiments described above should be understood as illustrative and not restrictive in all aspects. Should be. The scope of the present invention is shown by the following claims rather than the detailed description, and all changes or modifications derived from the meaning and scope of the claims and their equivalents should be construed as being included in the scope of the present invention. do.
Since the fuse circuit of the semiconductor device according to the present invention can be used for design analysis and identification information setting, it is possible to simply add identification information even after the design and analysis is completed, and it is very efficient because no additional layout is required.
Claims (15)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070057583A KR20080109368A (en) | 2007-06-13 | 2007-06-13 | Fuse circuit of semiconductor apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070057583A KR20080109368A (en) | 2007-06-13 | 2007-06-13 | Fuse circuit of semiconductor apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20080109368A true KR20080109368A (en) | 2008-12-17 |
Family
ID=40368690
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020070057583A KR20080109368A (en) | 2007-06-13 | 2007-06-13 | Fuse circuit of semiconductor apparatus |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR20080109368A (en) |
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2007
- 2007-06-13 KR KR1020070057583A patent/KR20080109368A/en not_active Application Discontinuation
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J501 | Disposition of invalidation of trial |