KR20080109171A - Metal substrate, lead frame, semiconductor package and method for manufacturing thereof - Google Patents

Abstract

A metal substrate, a lead frame, and a semiconductor package and a manufacturing method thereof are provided to increase the efficiency of the manufacturing process by adamantly supporting the die pad and the lead without the tie bar and the dam bar. A metal substrate(10) comprises a plurality of metal terminals(11) and the oxidized portion(12). The oxidized portion is electrically separated while a plurality of metal terminals are supported. The oxidized portion is interposed between a plurality of metal terminals. The thickness of the oxidized portion is smaller than the thickness of the metal terminal. The terminal is made of the material including the aluminium(Al).

Description

Metal substrate, lead frame, semiconductor package and manufacturing method {Metal substrate, lead frame, semiconductor package and method for manufacturing technique}

1 is a plan view showing a lead frame according to the prior art.

2 is a cross-sectional view showing a metal substrate according to an aspect of the present invention.

3 is a cross-sectional view illustrating a layup layer laminated on the metal substrate of FIG. 2.

4 is a flowchart illustrating a method of manufacturing the metal substrate of FIG. 2.

5 is a flow chart showing the manufacturing method of FIG.

Figure 6 is a plan view showing a lead frame according to another aspect of the present invention.

FIG. 7 is a cross-sectional view illustrating the lead frame of FIG. 6. FIG.

8 is a flowchart illustrating a method of manufacturing the leadframe of FIG. 6.

9 is a flow chart showing the manufacturing method of FIG.

10 is a cross-sectional view showing a first embodiment of a semiconductor package according to another aspect of the present invention.

FIG. 11 is a cross-sectional view illustrating a conductive ball coupled to a semiconductor package of FIG. 10. FIG.

12 is a flowchart illustrating a method of manufacturing the semiconductor package of FIG. 11.

13 is a flow chart showing the manufacturing method of FIG.

14 is a sectional view showing a second embodiment of a semiconductor package according to another aspect of the present invention.

15 is a cross-sectional view illustrating a conductive ball coupled to a semiconductor package of FIG. 14.

FIG. 16 is a flowchart illustrating a method of manufacturing the semiconductor package of FIG. 15.

17 is a flow chart showing the manufacturing method of FIG.

<Explanation of symbols for the main parts of the drawings>

10: metal substrate 10 ': metal plate

11: terminal 12: oxidation part

14: opening 16: insulating layer

17: Via 20: Layup layer

21: blind via hole (BVH) 22, 23: pattern

30: die pad 30 ': metal plate

32, 42: oxidation part 34, 44: opening part

40: lead

50, 50 ': semiconductor chip 55: adhesive layer

55 ': underfill portion 60: wire

70: molding part 80: challenge ball

The present invention relates to a metal substrate, a lead frame, a semiconductor package and a method of manufacturing the same.

Modern electronic devices such as MP3 players, mobile phones, laptops, etc. are designed to be multi-functional in a minimal area by packaging a large number of semiconductor chips on the main board, and have a structure that is extremely small and easily dissipates heat. The trend is going. As a result, semiconductor chips are not only highly integrated, but also the size of semiconductor packages packaged therein is being reduced and densified.

Recently, there is a need for a method capable of transmitting electrical signals of a semiconductor chip to a main board through a substrate, protecting the semiconductor chip and electrical signals from an external environment, and releasing high heat generated from the semiconductor chip. have.

On the other hand, a lead frame is a lead that connects an input / output pad of a semiconductor chip with an electric circuit formed on the main board and a frame that fixes the semiconductor package to the main board at the same time. The semiconductor package refers to a signal extracting terminal to the main board using the above-described lead frame to protect the semiconductor chip on which various electronic circuits and wiring are formed from various external environments and to optimize and maximize the performance of the semiconductor chip. Formed and molded using a molding material or the like.

1 is a plan view showing a lead frame according to the prior art. As shown in FIG. 1, a conventional lead frame includes a square die pad 1 on which a semiconductor chip is mounted as a copper (Cu) or copper alloy material, and a plurality of ties for supporting and fixing the die pad 1. A tie-bar 2, a plurality of inner leads 3 connected by conductive wires from respective input / output pads, which are external terminals of the semiconductor chip 1, and outer leads extending from the inner leads 3, respectively. (4) and a dam bar (5) which borders the inner lead (3) and the outer lead (4).

According to this prior art, there is a problem that the die pad 1 and the lid cannot be firmly supported by the tie bar 2 and the dam bar 5, so that handling in the packaging process is not easy, and the tie bar 2 ) And the process of removing the dam bar (5), there is also a problem that the efficiency of the process is lowered.

The present invention can exhibit a high heat dissipation effect, to provide a metal substrate easy to handle in the process.

The present invention also provides a lead frame, a semiconductor package, and a method of manufacturing the same, which can firmly support a die pad and a lead without a tie bar and a dam bar, thereby increasing the efficiency of the manufacturing process.

According to one aspect of the invention, a plurality of metal terminals; A plurality of metal terminals may be provided between the plurality of metal terminals such that the plurality of metal terminals are supported and electrically separated from each other, and the thickness of the oxide portion may be provided with a metal substrate, which is smaller than the thickness of the metal terminals.

In addition, according to another aspect of the invention, a method of manufacturing a metal substrate is formed a plurality of terminals are electrically separated by an insulating portion, comprising the steps of: providing a metal plate; Selectively oxidizing one surface of the metal plate to correspond to the insulating portion; And selectively etching the other surface of the metal plate corresponding to the position of the insulation part.

The metal terminal may be made of a material including aluminum (Al).

On the other hand, according to another aspect of the invention, the die pad is a semiconductor chip is seated; A plurality of leads formed at a predetermined distance from an edge of the die pad; And a first oxidation part interposed between the die pad and the lead to support the lead, wherein the thickness of the first oxidation part is smaller than the thickness of the die pad.

A second oxidation part interposed between the plurality of leads and electrically separating the plurality of leads may be further provided, wherein the thickness of the second oxidation part may be smaller than the thickness of the lead. The lead frame and the lead may be made of aluminum as the main material.

According to another aspect of the present invention, a semiconductor device includes a die pad on which a semiconductor chip is seated, a plurality of leads formed at a predetermined distance from an edge of the die pad, and a first oxide part interposed between the die pad and the leads to support the leads. A method of manufacturing a lead frame comprising the steps of: providing a metal plate; Selectively oxidizing one surface of the metal plate to correspond to the first oxidation portion; It is possible to provide a lead frame manufacturing method comprising selectively etching the other surface of the metal plate corresponding to the position of the first oxidation portion.

The metal plate may be made of aluminum as the main material.

In addition, the step of selectively oxidizing one surface of the metal plate to correspond to the region between the lead and the lead; And selectively etching the other surface of the metal plate to correspond to the region between the lead and the lead.

According to another aspect of the invention, the die pad; A semiconductor chip seated on a die pad; A plurality of leads formed at a predetermined distance from an edge of the die pad; And a first oxidation part interposed between the die pad and the lead to support the lead, wherein the thickness of the first oxidation part is smaller than the thickness of the die pad.

The lead frame and the lead may be made of aluminum as a main material, and may further include a second oxidation part interposed between the plurality of leads to electrically separate the plurality of leads. At this time, the thickness of the second oxidation portion may be smaller than the thickness of the lead.

In addition, a conductive ball may be coupled to the bottom of the lead, and the semiconductor chip may be connected to the lead and a flip chip.

According to still another aspect of the present invention, a die pad, a semiconductor chip seated on the die pad, a plurality of leads formed at a predetermined distance apart from an edge of the die pad, and interposed between the die pad and the lead to support the lead 1. A method of manufacturing a semiconductor package comprising an oxide portion, the method comprising: providing a metal plate; Selectively oxidizing one surface of the metal plate to correspond to the first oxidation portion; Selectively etching the other surface of the metal plate corresponding to the position of the first oxidation portion; And providing a semiconductor chip on the die pad.

The metal plate may be made of aluminum as the main material.

Selectively oxidizing one surface of the metal plate to correspond to a region between the lead and the lead; And selectively etching the other surface of the metal plate to correspond to the region between the lead and the lead, and further coupling the conductive ball to the bottom of the lead.

Meanwhile, the semiconductor chip may be connected to the lead and the flip chip.

Other aspects, features, and advantages other than those described above will become apparent from the following drawings, claims, and detailed description of the invention.

Hereinafter, preferred embodiments of a metal substrate, a lead frame, a semiconductor package, and a method of manufacturing the same according to the present invention will be described in detail with reference to the accompanying drawings. The same reference numerals will be given and redundant description thereof will be omitted.

2 is a cross-sectional view illustrating a metal substrate according to an aspect of the present invention, and FIG. 3 is a cross-sectional view illustrating a layup layer laminated on the metal substrate of FIG. 2. 2 and 3, the metal substrate 10, the terminal 11, the oxidation unit 12, the opening 14, the insulating layer 16, the via 17, the layup layer 20, and BVH (blind via hole, 21), patterns 22 and 23 are shown.

The metal substrate 10 according to the present exemplary embodiment includes a plurality of terminals 11 electrically separated from each other, and has a structure in which a portion between each terminal 11 is oxidized and a portion is etched.

Through this structure, the respective terminals 11 may have an effect of supporting each other, so that handling may be facilitated. As a result, the terminal 11 can be further refined, and thus more terminals 11 can be formed for a limited area.

In addition, in consideration of the time required for oxidation, the oxidation portions 12 are formed only as deep as each terminal 11 can support each other, and the remaining portions are etched to form the openings 14, The manufacturing process can be optimized.

3 shows a printed circuit board to which the metal substrate 10 according to the present embodiment is applied. As shown in FIG. 3, the insulating layer 16 may be stacked on the upper and lower surfaces of the metal substrate 10, and the layup layer 20 may be stacked again. The upper and lower surfaces of the layup layer 20 may have predetermined patterns 22 and 23, respectively, and the upper and lower surfaces of the layup layer 20 may be connected to each other by the BVH 21 or the like. The metal substrate 10 and the layup layer 20 may be electrically connected to each other through vias 17 penetrating through the insulating layer 16.

 As such, when the metal substrate 10 according to the present embodiment is inserted into the printed circuit board, not only the above-described effects but also a function as a heat sink for efficiently dissipating heat generated inside the printed circuit board may be performed.

In consideration of efficient heat dissipation and economic feasibility, the metal substrate according to the present embodiment may be made of aluminum as a main material. That is, a part of the aluminum plate can be oxidized and the remaining part can be etched to form each terminal. Through this, it is possible to form a terminal made of aluminum, each terminal can be efficiently performed a heat radiation function.

As such, the metal substrate 10 according to the present embodiment may not only form a large number of terminals 11, but also perform a heat dissipation function efficiently, and also increase a rigidity of the printed circuit board. This can be a means that can effectively cope with the increase in density of the printed circuit board.

4 and 5 illustrate a method of manufacturing a metal substrate having the above-described structure. 4 is a flowchart illustrating a method of manufacturing the metal substrate of FIG. 2, and FIG. 5 is a flowchart illustrating the manufacturing method of FIG. 4. Referring to FIG. 5, a metal substrate 10, a metal plate 10 ′, a terminal 11, an oxidation unit 12, and an opening 14 are illustrated.

First, a metal plate is provided (S110). The metal plate is a main component constituting the metal substrate 10. As described above, an aluminum plate may be used as the metal plate 10 '. This metal plate is shown in Fig. 5A.

Next, one surface of the metal plate 10 ′ is selectively oxidized to correspond to the insulating part (S120). Here, the insulating part refers to a part that electrically separates the terminals 11, and the oxidation part 12 and the opening part 14 illustrated in FIG. 2 may correspond to the insulating part.

To this end, it is possible to use a method of laminating a resist 13a on the metal plate 10 '(FIG. 5B) so that the position where the oxidation part 12 is to be formed is exposed (FIG. 5B), and oxidizing only a selected portion (FIG. 5). (C)). The oxidation portion 12 can be formed by selectively oxidizing the metal plate 10 'and then removing the resist 13a.

As the method of forming the oxidizing unit 12, a thermal oxidation method of heating near a melting point in an oxygen atmosphere, an oxygen plasma treatment using microwaves, a method using ion scattering, and anodization ( anodized oxidation) may be used. In addition, a deposition method such as a chemical vapor deposition (CVD) method, a plasma-enhanced chemical vapor deposition (PECVD) method, a metal organic chemical vapor deposition (MOCVD) method, or an atomic layer deposition (ALD) method may be used.

Next, the other surface of the metal plate 10 ′ is selectively etched to correspond to the position of the insulator (S130). In other words, the opposite surface is etched in accordance with the position where the oxidation part 12 is formed. To this end, as shown in FIG. 5D, the openings 14 may be formed by stacking the resist 13b and applying an etchant.

After that, the manufacture of the metal substrate 10 may be completed by removing the stacked resist 13b. ((E) of FIG. 5)

Meanwhile, in the present embodiment, the method of forming the oxidation part 12 first and the opening part 14 later is presented, but the opening part 14 may be formed first and the oxidation part 12 may be formed later. .

Next, a lead frame according to another aspect of the present invention will be described. 6 is a plan view illustrating a lead frame according to another aspect of the present invention, and FIG. 7 is a cross-sectional view illustrating the lead frame of FIG. 6. 6 and 7, the die pad 30, the oxidizers 32 and 42, the opening 34, and the lid 40 are shown.

The die pad 30 is a means on which the semiconductor chip is seated and supported. The die pad 30 may be made of metal such as copper or aluminum, and may function as a ground. In this embodiment, the die pad 30 made of aluminum is proposed in consideration of economical efficiency and an oxidation process. Of course, the die pad 30 may be made of a material other than aluminum.

The lead 40 is formed to be spaced apart from the edge of the die pad 30 by a predetermined distance, and may be electrically connected to terminals of the semiconductor chip seated on the die pad 30 described above. In this way, the lead 40 electrically connected to the terminals of the semiconductor chip is connected to the circuit pattern of the printed circuit board, so that the semiconductor chip can be electrically connected to the circuit pattern of the printed circuit board.

The lead 40 and the terminals of the semiconductor chip may be connected through conductive wires or may be connected in a flip chip manner.

Like the die pad 30, the lead 40 may be made of a material such as copper and aluminum. In the lead frame according to the present embodiment, since the die pad 30 and the lead 40 are separated by oxidation, the lead 40 may also be made of the same material as the die pad 30. That is, as described above, the lead 40 may also be made of the same aluminum material as the die pad 30.

The oxidation part 32 and the opening part 34 interposed between the die pad 30 and the lead 40 are means for distinguishing between the die pad 30 and the lead 40 and insulating them. That is, the die pad 30 and the lead 40 are distinguished from each other through the oxidation part 32 having a thickness smaller than that of the die pad 30.

At this time, the die pad 30 and the lead 40 may be physically connected to each other by the oxidation unit 32 to be supported. Through this structure, the handling may be facilitated, and the lead 40 may be further refined, and thus more leads 40 may be formed for a limited area.

In consideration of the time required for oxidation, the oxidizing unit 32 is formed only to a depth such that each die pad 30 and the lead 40 can be supported by each other, and the remaining portion is etched to form the opening 34. As a result, the manufacturing process and the structure can be optimized.

Meanwhile, the lead 40 and the lead 40 may also be insulated from each other by the oxidation part 42 and the opening (44 in FIG. 9). That is, as in the case of the die pad 30 and the lead 40, the lead 40 and the lead 40 are distinguished from each other by the oxidation part 42 having a thickness smaller than the thickness of the lead 40.

At this time, of course, the lead 40 and the lead 40 may be supported by the oxidizing unit 42, and the handling may be facilitated through such a structure, and the lead 40 may be further refined. As described above, more leads 40 can be formed for a limited area.

Through the above-described structure, the lead frame according to the present embodiment has an advantage in handling in the process of implementing the semiconductor package. In addition, when using the lead frame according to the present embodiment, it is not necessary to perform the process of removing the tie bar, the dam bar, etc. as in the prior art, thereby increasing the efficiency of the process. In addition, the lead can be firmly supported, which can have an advantageous effect on the increase in the input / output path (high I / O).

8 and 9 illustrate a method of manufacturing a leadframe having the above-described structure. 8 is a flowchart illustrating a method of manufacturing the lead frame of FIG. 6, and FIG. 9 is a flowchart illustrating the manufacturing method of FIG. 8. 9, a metal plate 30 ′, oxide portions 32 and 42, openings 34 and 44, and leads 40 are shown. Here, FIGS. 9A to 9C are front cross-sectional views, and FIGS. 9D and 13E are side views.

First, a metal plate is provided (S210, Fig. 9A). In this embodiment, since the oxidation process for the metal plate is performed, the material of the metal plate may be selected in consideration of the suitability and economical efficiency of the metal plate. In this embodiment, aluminum is presented as the material of the metal plate.

Next, one surface of the metal plate corresponding to the die pad and the lead is selectively oxidized (S220, FIG. 9B), and the other surface of the metal plate corresponding to the die pad and the lead is selectively etched (S230, (C) of FIG. 9). The oxidation portion 32 and the opening 34 are formed in a shape surrounding the portion so that the portion to function as the die pad 30 can be electrically isolated.

As a result, the die pad 30 can be formed, and at the same time, the die pad 30 can be firmly supported without any additional means for supporting the die pad 30, such as tie bars in the prior art, which will be continued later. Handling can be facilitated in the packaging process.

Thereafter, one surface of the metal plate corresponding to the lead and the lead is selectively oxidized again (S240, FIG. 9 (d)), and the other surface of the metal plate corresponding to the lead and the lead is selectively etched (S250, FIG. 9). (E)).

As a result, it is possible to form a plurality of leads 40 that are electrically separated from each other, and at the same time, the leads 40 can be firmly supported without a separate means for supporting the leads 40, such as a dam bar in the prior art. Handling may be facilitated in the packaging process to be continued later, it may be advantageous to increase the number of input and output terminals.

Next, a semiconductor package according to another aspect of the present invention will be described. 10 is a cross-sectional view showing a first embodiment of a semiconductor package according to another aspect of the present invention, and FIG. 11 is a cross-sectional view showing a conductive ball coupled to the semiconductor package of FIG. 10. 10 and 11, the die pad 30, the oxidation part 32, the opening part 34, the lead 40, the semiconductor chip 50, the adhesive layer 55, the wire 60, and the molding part 70, conductive ball 80 is shown.

Since the description of the die pad 30, the oxidation unit 32, and the lead 40 is the same as the description of the lead frame described above, a detailed description thereof will be omitted.

The semiconductor chip 50 may be seated on and supported by the die pad 30. In the present exemplary embodiment, a structure in which the semiconductor chip 50 is mounted using the adhesive layer 55 is presented. The semiconductor chip 50 may be seated on the die pad 30 using various other methods.

The semiconductor chip 50 mounted on the die pad 30 may be electrically connected to the lead 40 through the conductive wire 60, and may also be electrically connected to the die pad 30. The die pad 30 electrically connected to the semiconductor chip 50 may also function as a ground.

Top surfaces of the die pad 30, the semiconductor chip 50, and the lid 40 may be covered by the molding part 70. The molding unit 70 may protect not only the semiconductor chip 50, but also an electrical connection between the semiconductor chip 50 and the lead 40 from the outside. The molding part 70 may be formed by performing molding using an epoxy molding compound (EMC) on the upper surface of the die pad 30, the semiconductor chip 50, and the lead 40. By molding, the opening 34 may be filled with EMC or the like.

Meanwhile, in the present embodiment, the molding part 70 proposes a structure covering substantially the entire top surfaces of the die pad 30 and the lead 40. That is, minimization of the semiconductor package is efficiently realized by minimizing the extension of the lead 40 to the side and by using the bottom of the lead 40 to implement electrical connection.

As described above, the semiconductor package according to the present exemplary embodiment has a structure in which the die pad 30 and the lead 40, the leads 40 and the lead 40 are physically connected to each other by the oxidation unit 32, and are supported by each other. Since it is possible to easily minimize the size of the lead 40, it can be advantageous to miniaturization of the package as described above.

In order to implement electrical connection using the bottom of the lead 40, the conductive ball 80 may be coupled to the bottom of the lead 40. Through this structure, the semiconductor package according to the present embodiment may implement a ball grid array (BGA).

A method of manufacturing a semiconductor package having the above-described structure is shown in FIGS. 12 and 13. 12 is a flowchart illustrating a method of manufacturing the semiconductor package of FIG. 11, and FIG. 13 is a flowchart illustrating the manufacturing method of FIG. 12. Referring to FIG. 13, the die pad 30, the oxidation part 32, the opening part 34, the lead 40, the semiconductor chip 50, the adhesive layer 55, the wire 60, the molding part 70, The conductive ball 80 is shown.

First, after providing a metal plate (S310), one surface of the metal plate corresponding to the die pad and the lead is selectively oxidized (S320), and the other surface of the metal plate corresponding to the die pad and the lead is selectively etched (S330). .

Thereafter, one surface of the metal plate corresponding to the lead and the lead is selectively oxidized again (S340), and the other surface of the metal plate corresponding to the lead and the lead is selectively etched (S350). As a result, a lead frame as shown in FIG. 13A may be formed.

Since the above steps are the same as the steps S210 to S250 of FIG. 8 described above, detailed description thereof will be omitted.

Next, the semiconductor chip 50 is seated on the die pad 30 (S360). To this end, first, as shown in FIG. 13B, the semiconductor chip 50 is bonded to the die pad 30 using the adhesive 55 (S361), and shown in FIG. 13C. As shown in FIG. 13D, the semiconductor chip 50 and the lead 30 are wire-connected as shown in FIG. 13D, and the upper surface of the semiconductor chip 50, the die pad 30, and the lead 40 as shown in FIG. 13D. It is possible to use a method of performing molding to cover (S363).

Thus, the semiconductor chip 50 is seated on the die pad 30, and then, as shown in FIG. 13E, the conductive ball 80 is coupled to the bottom surface of the lead 40 (S370). (BGA) can be implemented.

14 is a cross-sectional view illustrating a second embodiment of a semiconductor package according to another aspect of the present invention, and FIG. 15 is a cross-sectional view illustrating a conductive ball coupled to the semiconductor package of FIG. 14. Referring to FIGS. 14 and 15, the die pad 30, the oxidation part 32, the opening part 34, the lead 40, the semiconductor chip 50 ′, the underfill part 55 ′, and the pad 60 ′ , Conductive ball 80 is shown.

This embodiment has a difference in that the semiconductor chip 50 ′ is flip-chip connected to the lead 40 as compared with the first embodiment described above. That is, the semiconductor chip 50 ′ has a structure that is directly connected by using a flip chip method without using the wire 60 to electrically connect the semiconductor chip 50 ′ and the lead 40. The semiconductor chip 50 ′ connected to the lead 40 in a flip chip manner may be firmly seated on and supported by the die pad 30 by the underfill portion 55 ′.

The semiconductor chip 50 ′ may also be directly connected to the die pad 30, and the die pad 30 may function as a ground as described above.

As in the exemplary embodiment, since the semiconductor chip 50 ′ and the lead 40 are flip-chip connected, the molding process may be omitted, thereby simplifying the process and miniaturizing the semiconductor package.

On the other hand, since the die pad 30 and the lead 40, the lead 40 and the lead 40 are supported by the oxidation unit 32 to facilitate handling, the flip chip as in this embodiment can be efficiently implemented. It becomes possible.

A method of manufacturing a semiconductor package having the above-described structure is shown in FIGS. 16 and 17. FIG. 16 is a flowchart illustrating a method of manufacturing the semiconductor package of FIG. 15, and FIG. 17 is a flowchart illustrating the manufacturing method of FIG. 16. Referring to FIG. 17, the die pad 30, the oxidizing portion 32, the opening 34, the lead 40, the semiconductor chip 50 ′, the underfill portion 55 ′, the pad 60 ′, the conductive ball 80 is shown.

The semiconductor package manufacturing method according to the present embodiment is different from that of mounting the semiconductor chip 50 ′ on the die pad 30 in a flip chip method as compared with the above-described embodiment.

First, after providing a metal plate (S410), one surface of the metal plate corresponding to the die pad and the lead is selectively oxidized (S420), and the other surface of the metal plate corresponding to the die pad and the lead is selectively etched (S430). .

Thereafter, one surface of the metal plate corresponding to the lead and the lead is selectively oxidized again (S440), and the other surface of the metal plate corresponding to the lead and the lead is selectively etched (S450) to form a lead frame. Since the above process is the same as the steps S310 to S350 of FIG. 12 described above, a detailed description thereof will be omitted.

Next, as shown in FIG. 17B, the semiconductor chip 50 ′ is seated on the die pad 30 using the flip chip method (S460). That is, for the electrical connection between the semiconductor chip 50 'and the lead 40, a method of directly connecting by using a flip chip method is used. The semiconductor chip 50 'and the lead 40 may be connected in a flip chip manner and underfilled to allow the semiconductor chip 50' to be firmly seated and supported.

As described above, the semiconductor chip 50 ′ may be directly connected to the die pad 30. In this case, the die pad 30 may function as a ground.

Next, as shown in FIG. 17C, the conductive ball 80 is coupled to the bottom surface of the lead 40 (S470). In order to realize an electrical connection using the bottom of the lead 40, the conductive ball 80 is coupled to the bottom of the lead 40. Through this structure, a ball grid array (BGA) can be implemented.

The embodiments of the metal substrate, the lead frame, the semiconductor package, and the manufacturing method thereof according to various aspects of the present invention have been described above, and many embodiments other than the above-described embodiments exist within the claims of the present invention.

According to the preferred embodiment of the present invention as described above, it can exhibit a high heat dissipation effect, it can provide an effect of easy handling in the process.

In addition, the present invention can increase the efficiency of the manufacturing process by firmly supporting the die pad and the lead without the tie bar and the dam bar.

Claims (22)

A plurality of metal terminals; It includes an oxidation portion interposed between the plurality of metal terminals so that the plurality of metal terminals are supported and electrically separated from each other, The thickness of the oxidation portion is a metal substrate, characterized in that less than the thickness of the metal terminal. The method of claim 1, The terminal is a metal substrate, characterized in that made of a material containing aluminum (Al). A method of manufacturing a metal substrate on which a plurality of terminals electrically separated by an insulating portion are formed, Providing a metal plate; Selectively oxidizing one surface of the metal plate to correspond to the insulating portion; Selectively etching the other surface of the metal plate corresponding to the position of the insulating part. The method of claim 3, The metal plate is a method of manufacturing a metal substrate comprising aluminum. A die pad on which a semiconductor chip is mounted; A plurality of leads formed at a predetermined distance from an edge of the die pad; And A first oxidation part interposed between the die pad and the lead to support the lead, The thickness of the first oxide portion is smaller than the thickness of the die pad leadframe. The method of claim 5, And a second oxidation part interposed between the plurality of leads to electrically separate the plurality of leads. The method of claim 6, The thickness of the second oxidation portion is a lead frame, characterized in that less than the thickness of the lead. The method of claim 5, The lead frame and the lead frame, characterized in that made of aluminum. A lead frame includes a die pad on which a semiconductor chip is seated, a plurality of leads formed at a predetermined distance from an edge of the die pad, and a first oxide part interposed between the die pad and the leads to support the leads. As a way to, Providing a metal plate; Selectively oxidizing one surface of the metal plate to correspond to the first oxidation portion; And selectively etching the other surface of the metal plate corresponding to the position of the first oxidation part. The method of claim 9, The metal plate is a lead frame manufacturing method characterized in that it comprises aluminum. The method of claim 9, Selectively oxidizing one surface of the metal plate to correspond to a region between the lead and the lead; And And selectively etching the other surface of the metal plate to correspond to a region between the lead and the lead. Die pads; A semiconductor chip seated on the die pad; A plurality of leads formed at a predetermined distance from an edge of the die pad; And A first oxidation part interposed between the die pad and the lead to support the lead, The thickness of the first oxidation portion is a semiconductor package, characterized in that less than the thickness of the die pad. The method of claim 12, The lead frame and the lead is a semiconductor package, characterized in that made of aluminum. The method of claim 12, And a second oxidation part interposed between the plurality of leads and electrically separating the plurality of leads. The method of claim 14, The thickness of the second oxidation portion is a semiconductor package, characterized in that less than the thickness of the lead. The method of claim 14, The semiconductor package further comprises a conductive ball coupled to the bottom of the lead. The method of claim 14, And the semiconductor chip is flip chip connected to the lead. A die pad, a semiconductor chip seated on the die pad, a plurality of leads formed at a predetermined distance from an edge of the die pad, and a first oxide part interposed between the die pad and the leads to support the leads; As a method of manufacturing a semiconductor package to Providing a metal plate; Selectively oxidizing one surface of the metal plate to correspond to the first oxidation portion; Selectively etching the other surface of the metal plate corresponding to the position of the first oxidation portion; And And mounting the semiconductor chip on the die pad. The method of claim 18, The metal plate is a semiconductor package manufacturing method comprising the aluminum. The method of claim 18, Selectively oxidizing one surface of the metal plate to correspond to a region between the lead and the lead; And And selectively etching the other surface of the metal plate so as to correspond to a region between the lead and the lead. The method of claim 20, The method of manufacturing a semiconductor package further comprising coupling a conductive ball to the bottom of the lead. The method of claim 18, The semiconductor chip manufacturing method of a semiconductor package, characterized in that the lead and the flip chip connected.

Images