KR20080103246A - Semiconductor apparatus having block heater for preventing sticking foreign materials from vacuum line - Google Patents

Semiconductor apparatus having block heater for preventing sticking foreign materials from vacuum line Download PDF

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Publication number
KR20080103246A
KR20080103246A KR1020070050296A KR20070050296A KR20080103246A KR 20080103246 A KR20080103246 A KR 20080103246A KR 1020070050296 A KR1020070050296 A KR 1020070050296A KR 20070050296 A KR20070050296 A KR 20070050296A KR 20080103246 A KR20080103246 A KR 20080103246A
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South Korea
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block heater
vacuum line
temperature
cartridge
chamber
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KR1020070050296A
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Korean (ko)
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김경민
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(주)티티에스
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16L—PIPES; JOINTS OR FITTINGS FOR PIPES; SUPPORTS FOR PIPES, CABLES OR PROTECTIVE TUBING; MEANS FOR THERMAL INSULATION IN GENERAL
    • F16L53/00—Heating of pipes or pipe systems; Cooling of pipes or pipe systems
    • F16L53/30—Heating of pipes or pipe systems
    • F16L53/35—Ohmic-resistance heating
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/02—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using thermoelectric elements, e.g. thermocouples
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Equipment for semiconductor fabrication is provided to prevent the power impurity from being generated due to the non-reactive residual gas and the process byproduct. Equipment for semiconductor fabrication comprises the chamber; the vacuum line(3) which is the process gas flow channel of the chamber; the built-in cartridge hotwire(5) for the uniform temperature transmission to the vacuum line and the related valve; the thermocouple(8) which controls so that the heat-generating temperature of the cartridge hotwire is accurately maintained; the bimetal which blocks that the heat-generating temperature of the cartridge hotwire heats over the preset temperature; the catch clip(6) which is adhered to the outer circumference of the vacuum line; the block heater(2).

Description

진공라인의 불순물 점착 방지용 블록히터가 구성된 반도체 장비{Semiconductor apparatus having block heater for preventing sticking foreign materials from vacuum line}Semi-conductor apparatus having block heater for preventing sticking foreign materials from vacuum line}

도 1은 반도체 장비의 전체적인 개략도.1 is an overall schematic diagram of semiconductor equipment.

도 2는 본 발명의 블록히터가 구성된 반도체 장비의 전체적인 개략도.2 is an overall schematic diagram of a semiconductor device in which a block heater of the present invention is configured;

도 3은 도 2의 진공라인에 장착된 블록히터의 상세 구성도로써 진공라인에 장착된 상태 중 일부를 도시한 도면.FIG. 3 is a detailed configuration diagram of a block heater mounted on the vacuum line of FIG. 2, showing a part of a state mounted on the vacuum line. FIG.

도 4는 도 3의 단면도.4 is a cross-sectional view of FIG.

도 5는 본 발명의 진공라인에 장착된 블록히터의 엇갈림 결합 구조도.Figure 5 is a staggered coupling structure of the block heater mounted on the vacuum line of the present invention.

도 6은 도 4의 캐치 클립에 의해 블록히터가 결합된 상태를 나타낸 사시도.6 is a perspective view showing a state in which the block heater is coupled by the catch clip of FIG.

도 7은 도 4의 캐치 클립이 열려진 상태를 도시한 사시도.FIG. 7 is a perspective view illustrating an open state of the catch clip of FIG. 4. FIG.

* 도면의 주요 부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings

1: 챔버 2: 블록히터1: chamber 2: block heater

3: 진공라인 4: 진공 펌프3: vacuum line 4: vacuum pump

5: 카트리지 열선 6: 캐치 클립5: cartridge heating 6: catch clip

7: 바이메탈 8: 써모커플7: Bimetal 8: Thermocouple

9: 엇갈림 결합 구조9: staggered coupling structure

본 발명은 진공라인에 대한 불순물 점착 방지용 블록히터가 구성된 반도체 장비에 관한 것으로써, 특히 챔버의 출구쪽(후단)에 접한 진공라인에 블록히터를 장착하여 불순물 점착을 방지함으로써 반도체 제조효율을 향상시킬 수 있도록 한 기술이다.The present invention relates to a semiconductor device comprising a block heater for preventing impurity adhesion to a vacuum line, and in particular, by installing a block heater in a vacuum line in contact with an outlet side (rear) of a chamber to prevent impurity adhesion, thereby improving semiconductor manufacturing efficiency. One technique to help.

도 1에 도시한 바와 같이 반도체 제조에 있어서의 화학기상증착(CVD: Chemical Vapor Deposition) 공정 중 공정 가스는 열원이 있는 챔버(1) 내부에서는 높은 온도로 기체 상태를 유지하나 열원이 없는 챔버(1) 후단의 진공라인(3)으로 배출될 때는 상온의 온도로 배출된다. As shown in FIG. 1, a process gas during a chemical vapor deposition (CVD) process in semiconductor manufacturing maintains a gaseous state at a high temperature inside a chamber 1 having a heat source, but does not have a heat source. ) When discharged into the vacuum line 3 at the rear end, the discharge is performed at room temperature.

따라서 진공라인(3)의 낮은 온도로 인하여 미반응 잔류가스가 기체 상태를 유지하지 못하고 액체 및 고체로 환원되면서 공정 부산물과 함께 파우더(분말, 이하 불순물로 명기한다)화 되어 진공라인(3)의 내벽에 점착된다. Therefore, due to the low temperature of the vacuum line 3, the unreacted residual gas is not maintained in a gaseous state and is reduced to liquids and solids, and then powdered together with process by-products (specified as powder, hereinafter impurity) to form the vacuum line 3. Adheres to the inner wall.

특히 액상 소스를 사용하는 공정(MOCVD)에서는 이러한 문제가 더욱 심각하다. 진공라인(3) 내부에 대한 불순물 점착은 진공라인(3)의 내부(유로)를 협소하게 하여 진공 능력 저하를 유발하는 것은 물론, 진공펌프(4) 인입구의 압력을 상승시켜 공정 중의 배기가스 역류 현상을 발생시킨다. This problem is particularly acute in processes using liquid sources (MOCVD). Impurity adhesion to the inside of the vacuum line 3 narrows the inside (flow path) of the vacuum line 3 to cause a decrease in the vacuum capacity, and also increases the pressure at the inlet of the vacuum pump 4 so that the exhaust gas flow back during the process. Causes a phenomenon.

또한 상기와 같이 발생된 불순물은 진공라인(3)을 통해 진공펌프(4) 내부에 유입 점착되어 진공펌프(4)의 성능저하 및 수명을 단축시키는 문제를 야기하기도 한다. In addition, the impurities generated as described above are introduced and adhered into the vacuum pump 4 through the vacuum line 3, thereby causing a problem of deterioration of the performance of the vacuum pump 4 and shortening of life.

이러한 문제를 사전에 예방하기 위해 행하는 정기적 유지보수 작업은 생산설비의 가동 중단을 필요로 하므로 결국 생산 설비의 가동율을 저하시켜서 결국 생산성을 악화시키는 원인이 되기도 한다. Regular maintenance work to prevent such a problem requires a downtime of the production facility, which in turn lowers the utilization rate of the production facility, which in turn causes a decrease in productivity.

종래 반도체 장비에서는 제조효율 및 생산성을 저하시키는 상기와 같은 불순물 발생을 억제하기 위한 수단으로 실리콘 러버 히터 및 가열 밴드히터 등의 히터를 사용하였다.In the conventional semiconductor equipment, a heater such as a silicon rubber heater and a heating band heater is used as a means for suppressing the generation of impurities as described above, which reduces manufacturing efficiency and productivity.

그러나 자체 재질의 열전도율과 진공라인에 대한 밀착 성능 저하로 피가열체에 균일한 온도 전달이 이루어지지 못함으로써 열손실 및 국부적 온도차가 발생하여 불순물 억제 효율이 저하되었다.However, due to the thermal conductivity of the material and the deterioration of the adhesion to the vacuum line, uniform temperature cannot be transmitted to the heated object, resulting in heat loss and local temperature difference, thereby reducing impurity suppression efficiency.

또한 상기 히터 자체 부피가 커서 제한된 공간에서의 사용이 어렵고 사용상 취급이 어려우며 열선 불량 발생시 히터 전체를 교환해야 하므로 비용측면에서도 단점을 가지고 있다. In addition, since the heater itself has a large volume, it is difficult to use in a limited space, difficult to handle in use, and has a disadvantage in terms of cost since the whole heater needs to be replaced when a poor heating wire occurs.

본 발명은 상기와 같은 종래 반도체 장비에서 발생하는 문제점을 개선하기 위하여 이루어진 것으로써, 본 발명의 목적은 진공라인에 대한 밀착이 가능하여 온도의 균일성 및 전달성을 향상시켜 공정 중 발생하는 미반응 잔류가스 및 공정 부 산물에 의한 파우더(불순물) 발생을 방지할 수 있도록 한 반도체 장비를 제공하는데 있다.The present invention has been made to improve the problems occurring in the conventional semiconductor equipment as described above, the object of the present invention is to be able to adhere to the vacuum line to improve the uniformity and transfer of the temperature unreacted during the process It is to provide a semiconductor device that can prevent the generation of powder (impurity) by the residual gas and process by-products.

본 발명의 다른 목적은 부피가 작아 제한된 공간에서도 취급이 용이하여 공정 중 발생하는 미반응 잔류가스 및 공정 부산물에 의한 파우더(불순물) 발생을 방지할 수 있도록 한 반도체 장비를 제공하는데 있다. Another object of the present invention is to provide a semiconductor device capable of preventing the generation of powder (impurity) by the unreacted residual gas and process by-products generated in the process by the small volume is easy to handle in a limited space.

상기 목적을 달성하기 위한 본 발명의 진공라인의 불순물 점착 방지용 블록히터가 구성된 반도체 장비는, 챔버; 상기 챔버의 공정가스 유로인 진공라인; 상기 진공라인과 그 관련 밸브에 균일한 온도전달을 위해 내장된 카트리지 열선과, 상기 카트리지 열선의 발열온도가 정확히 유지되도록 제어하는 써모커플과, 상기 카트리지 열선의 발열 온도가 설정온도 이상 과열되는 것을 차단하는 바이메탈과, 상기 진공라인의 외주면에 체결 가능하도록 부착된 캐치 클립으로 구성된 블록히터; 및 상기 진공라인을 흐르는 공정가스를 펌핑 배출하는 진공펌프로 이루어진 것을 특징으로 한다.In order to achieve the above object, a semiconductor device including a block heater for preventing impurity adhesion of a vacuum line of the present invention includes a chamber; A vacuum line which is a process gas flow path of the chamber; A cartridge hot wire embedded for uniform temperature transfer in the vacuum line and its associated valve, a thermocouple for controlling the heating temperature of the cartridge hot wire accurately, and a heat generation temperature of the cartridge hot wire is prevented from being overheated above a set temperature. A block heater comprising a bimetal and a catch clip attached to the outer circumferential surface of the vacuum line so as to be fastened; And a vacuum pump for pumping out the process gas flowing through the vacuum line.

본 발명의 블록히터는 챔버에서 공정 중 발생하는 미반응 잔류 가스가 약 150℃ 이하에서 파우더화 되는 것을 감안하여 진공라인에 대한 균일한 온도전달을 위해 150℃~200℃의 온도로 설정되는 것을 특징으로 한다.Block heater of the present invention is set to a temperature of 150 ℃ ~ 200 ℃ for uniform temperature transfer to the vacuum line in consideration that the unreacted residual gas generated during the process in the chamber is powdered at about 150 ℃ or less It is done.

본 발명의 블록히터는 온도 전달이 우수한 알루미늄 바디로 제조하고, 그 표면은 내식성 및 내마모성에 강하도록 하드 아노다이징 처리하는 것을 특징으로 한다.The block heater of the present invention is made of an aluminum body excellent in temperature transfer, and its surface is characterized by hard anodizing treatment to resist corrosion and abrasion resistance.

본 발명의 카트리지 열선은 안정적인 열량이 되도록 동일 열량을 갖는 열선을 직렬 혹은 병렬 연결한 것을 특징으로 한다.The cartridge heating wire of the present invention is characterized in that a heating wire having the same amount of heat is connected in series or in parallel so as to have a stable amount of heat.

본 발명의 블록히터는 두 개의 분리된 몸체가 엇갈림 구조로 형성되어 캐치 클립에 의해 대칭 결합됨으로써 결합시 얼라인이 용이하고, 진공라인에 대한 면접촉을 최대화하여 외부로의 열손실을 방지하는 것을 특징으로 한다.In the block heater of the present invention, two separate bodies are formed in a staggered structure and are symmetrically coupled by a catch clip to facilitate alignment at the time of joining, and to maximize surface contact with the vacuum line to prevent heat loss to the outside. It features.

본 발명의 캐치클립은 일측 블록히터에 힌지가 설치된 고정부에 의해 유동가능하게 고정된 고리와, 타측 블록히터에 힌지가 설치된 고정부에 의해 유동가능하게 고정되어 일정이상의 힘에 의해 밑으로 푸쉬되는 체결구로 구성되어 있는 것을 특징으로 한다.The catch clip of the present invention is movably fixed by a ring fixedly movable by a fixing part provided with a hinge on one side of the block heater, and a fixing part provided with a hinge installed on the other block heater, and pushed downward by a predetermined force or more. It is characterized by consisting of fasteners.

본 발명의 써모커플은 20~300℃의 온도 제어 범위를 갖는 것을 특징으로 한다.Thermocouple of the present invention is characterized by having a temperature control range of 20 ~ 300 ℃.

이하, 본 발명의 실시예를 첨부한 도면을 참조하여 상세히 설명하면 다음과 같다.Hereinafter, an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

도 2는 본 발명의 블록히터가 구성된 반도체 장비의 전체적인 개략도, 도 3은 도 2의 진공라인에 장착된 블록히터의 구성도, 도 4는 도 3의 단면도, 도 5는 본 발명의 진공라인에 장착된 블록히터의 엇갈림 결합 구조도, 도 6은 도 4의 캐치 클립에 의해 블록히터가 결합된 상태를 도시한 사시도, 도 7은 도 4의 캐치 클립이 열려진 상태를 도시한 사시도이다.2 is a schematic diagram of a semiconductor device including a block heater of the present invention, FIG. 3 is a block diagram of a block heater mounted on the vacuum line of FIG. 2, FIG. 4 is a sectional view of FIG. 3, and FIG. 5 is a vacuum line of the present invention. Fig. 6 is a perspective view illustrating a state in which a block heater is coupled by the catch clip of FIG. 4, and FIG. 7 is a perspective view illustrating an open state of the catch clip of FIG. 4.

종래와 동일 구성부분에 대하서는 동일부호를 명기한다.The same reference numerals are used for the same components as in the prior art.

진공라인(3)에 블록히터(2)를 감싸듯이 장착한다. The block heater 2 is mounted on the vacuum line 3 as if wrapped.

즉 챔버(1) 후단의 진공라인(3)에 블록히터(2)를 장착하여 공정 중 발생하는 미반응 잔류가스와 공정 부산물이 진공라인(3)의 온도차로 인해 파우더화(불순물)되는 것을 원천적으로 방지토록 한다. That is, the block heater 2 is attached to the vacuum line 3 at the rear end of the chamber 1 so that unreacted residual gas and process by-products generated during the process are powdered (impurities) due to the temperature difference of the vacuum line 3. To prevent it.

상기 챔버(1)에서 공정 중 발생하는 미반응 잔류 가스는 약150℃ 이하에서 파우더화 되므로 블록히터(2)를 진공라인(3)에 장착하여 약 150℃~200℃로 균일하게 온도를 유지토록 설정한다. Since the unreacted residual gas generated during the process in the chamber 1 is powdered at about 150 ° C. or less, the block heater 2 is mounted on the vacuum line 3 to maintain the temperature uniformly at about 150 ° C. to 200 ° C. Set it.

이와 같은 기능 수행을 위한 본 발명의 블록히터(2)는 도 3에 도시한 바와 같이 구성된다. The block heater 2 of the present invention for performing such a function is configured as shown in FIG.

본 발명의 블록히터(2)는 피가열체인 진공라인(3)과 그 관련 밸브에 균일한 온도전달을 위해 내장된 카트리지 열선(5)과, 상기 카트리지 열선(5)의 발열온도가 정확히 유지되도록 제어하기 위하여 블록히터(2)의 내면에 부착된 써모커플(8)과, 상기 카트리지 열선(5)의 발열 온도가 설정온도 이상 과열되는 것을 차단하는 바이메탈(7)과, 상기 진공라인(2)을 감싼 상태에서 체결이 가능하도록 부착된 캐치 클립(6)으로 이루어진다.The block heater (2) of the present invention is a cartridge heating wire (5) embedded for uniform temperature transfer in the vacuum line (3) and the associated valve to be heated, and the heat generation temperature of the cartridge heating wire (5) is maintained accurately A thermocouple 8 attached to the inner surface of the block heater 2 for controlling, a bimetal 7 for blocking the heat generation temperature of the cartridge heating wire 5 from being overheated above a set temperature, and the vacuum line 2. It is made of a catch clip (6) attached to be fastened in a wrapped state.

본 발명의 블록히터(2)는 온도 전달이 우수한 알루미늄 바디를 사용하며 표면은 내식성, 내마모성에 강하도록 하드 아노다이징 처리를 하고, 체적을 최소화하여 제한된 공간에서 취급이 용이하도록 카트리지 열선(5)을 내장한다. The block heater 2 of the present invention uses an aluminum body having excellent temperature transmission, and the surface is hard anodized to resist corrosion resistance and abrasion resistance, and the cartridge heating wire 5 is embedded to minimize the volume and to handle in a limited space. do.

본 발명의 블록히터(2)에 구성되는 써모커플(8)은 카트리지 열선(5)의 발열 온도를 20~300℃ 범위로 유지되도록 제어하며, 카트리지 열선(5)은 안정적인 열량이 되게끔 같은 열량을 가진 카트리지 열선(5)을 직렬 또는 병렬 연결한다. The thermocouple 8 configured in the block heater 2 of the present invention controls the heating temperature of the cartridge heating wire 5 to be maintained in the range of 20 to 300 ° C., and the cartridge heating wire 5 has the same amount of heat so as to have a stable heat quantity. Connect the cartridge heating wire (5) in series or parallel.

본 발명의 블록히터(2)는 도 4에 도시한 바와 같이 두개의 대칭 구조로 이루어진 분리된 몸체가 캐치 클립(6)에 의해 진공라인(3)의 외주면에 균일하게 밀착 결합된다. In the block heater 2 of the present invention, as shown in FIG. 4, a separate body having two symmetrical structures is uniformly coupled to the outer circumferential surface of the vacuum line 3 by the catch clip 6.

본 발명의 블록히터(2)는 도 5에 도시한 바와 같이 엇갈림 구조(9)로 되어 있어 조립시 얼라인(align)이 용이할 뿐만 아니라, 진공라인(3)에 대한 면접촉을 최대화하여 외부로의 열손실을 방지한다.The block heater 2 of the present invention has a staggered structure 9 as shown in FIG. 5, which facilitates alignment during assembly, and maximizes surface contact with the vacuum line 3. To prevent heat loss in the furnace.

또한 본 발명의 블록히터(2)를 결합하는 캐치 클립(6)은 도 6 및 도 7에 도시한 바와 같이 일측 블록히터(2)에 힌지(65)가 설치된 고정부(63)에 의해 유동가능하게 고정된 고리(62)와, 타측 블록히터(2)에 힌지(66)가 설치된 고정부(64)에 의해 유동가능하게 고정되어 일정이상의 힘에 의해 밑으로 푸쉬되는 체결구(61)로 구성되어 있다. In addition, the catch clip 6 to which the block heater 2 of the present invention is coupled is movable by a fixing part 63 provided with a hinge 65 at one side of the block heater 2 as shown in FIGS. 6 and 7. And a fastener 61 which is fixedly movable by a fixing part 64 provided with a hinge 66 installed on the other block heater 2 and pushed downward by a predetermined force or more. It is.

이 같은 캐치클립(2)은 체결구(61)가 위로 올라간 상태에서 고리(62)를 체결구(61)와 고정부(64) 사이의 공간에 삽입하고 체결구(61)를 힘을 가해 밑으로 눌러 고리(62)의 이탈을 방지함으로써 진공라인(3)에 밀착된 블록히터(2)가 결합된 상태를 유지토록 한다. The catch clip (2) is inserted into the space between the fastener 61 and the fixing portion 64 in the state in which the fastener 61 is raised upwards, and applies a fastener 61 to the bottom By pressing to prevent the separation of the ring 62 to maintain the combined state of the block heater 2 in close contact with the vacuum line (3).

본 발명은 특정한 실시예를 들어 설명하였으나 이에 한정하는 것은 아니며, 본 발명의 기술적 사상을 벗어나지 않는 범위 내에서는 수정 및 변형 실시가 가능 하다. 본 발명의 범위는 청구범위에 기재된 바에 따른다.Although the present invention has been described with reference to specific embodiments, the present invention is not limited thereto, and modifications and variations can be made without departing from the spirit of the present invention. The scope of the invention is as defined in the claims.

상술한 바와 같이 본 발명에 따른 진공라인에 대한 불순물 점착 방지용 블록히터가 구성된 반도체 장비에 의하면 다음 같은 뛰어난 효과가 있다.As described above, according to the semiconductor device including the block heater for preventing impurity adhesion to the vacuum line according to the present invention, there is an excellent effect as follows.

첫째, 알루미늄 바디의 블록히터(2)를 제공하여 균일 온도로 진공라인(3)을 가열하여 공정 중의 미반응 잔류 가스와 공정 부산물이 챔버에서 배기시 진공라인(3)의 낮은 온도에 의한 온도차로 의해 파우더화 되는 것을 방지할 수 있다.First, the block heater 2 of the aluminum body is provided to heat the vacuum line 3 to a uniform temperature, so that unreacted residual gas and process by-products during the process are discharged from the chamber by the temperature difference due to the low temperature of the vacuum line 3. Can be prevented from being powdered.

둘째, 블록히터 내부에 카트리지 열선(5)을 사용하여 체적을 최소화시킴으로써 공간적 제한을 없애 그 사용범의를 넓힐 수 있다. Second, by minimizing the volume by using the cartridge heating wire 5 inside the block heater, it is possible to widen the range of use by eliminating the space limitation.

Claims (7)

챔버(1);Chamber 1; 상기 챔버(1)의 공정가스 유로인 진공라인(3);A vacuum line 3 which is a process gas flow path of the chamber 1; 상기 진공라인(3)과 그 관련 밸브에 균일한 온도전달을 위해 내장된 카트리지 열선(5)과, 상기 카트리지 열선(5)의 발열온도가 정확히 유지되도록 제어하는 써모커플(8)과, 상기 카트리지 열선(5)의 발열 온도가 설정온도 이상 과열되는 것을 차단하는 바이메탈(7)과, 상기 진공라인(2)의 외주면에 체결이 가능하도록 부착된 캐치 클립(6)으로 구성된 블록히터(2); 및 A cartridge heating wire (5) embedded for uniform temperature transfer in the vacuum line (3) and its associated valve, a thermocouple (8) for controlling the heating temperature of the cartridge heating wire (5) to be maintained accurately, and the cartridge A block heater (2) consisting of a bimetal (7) for preventing the heating temperature of the hot wire (5) from being overheated above a set temperature and a catch clip (6) attached to the outer circumferential surface of the vacuum line (2); And 상기 진공라인(3)을 흐르는 공정가스를 펌핑 배출하는 진공펌프(4)로 이루어진 것을 가 구성된 것을 특징으로 하는 반도체 장비.Semiconductor equipment characterized in that consisting of a vacuum pump (4) for pumping out the process gas flowing through the vacuum line (3). 제1항에 있어서, 상기 블록히터(2)는 챔버에서 공정 중 발생하는 미반응 잔류 가스가 약 150℃ 이하에서 파우더화 되는 것을 감안하여 진공라인(3)에 대한 균일한 온도전달을 위해 150℃~200℃의 온도로 설정되는 것을 특징으로 하는 블록히터가 구성된 반도체 장비.The method according to claim 1, wherein the block heater (2) is 150 ℃ for uniform temperature transfer to the vacuum line (3) in consideration of the unreacted residual gas generated during the process in the chamber powdered at about 150 ℃ or less A semiconductor equipment comprising a block heater, characterized in that set to a temperature of ~ 200 ℃. 제1항에 있어서, 상기 블록히터(2)는 온도 전달이 우수한 알루미늄으로 제조하고, 그 표면은 내식성 및 내마모성에 강하도록 하드 아노다이징 처리하는 것을 특징으로 하는 블록히터가 구성된 반도체 장비.2. The semiconductor device as claimed in claim 1, wherein the block heater (2) is made of aluminum having excellent temperature transfer, and the surface of the block heater is hard anodized to be resistant to corrosion and abrasion resistance. 제1항에 있어서, 상기 카트리지 열선(5)은 안정적인 열량이 되도록 동일 열량을 갖는 열선을 직렬 혹은 병렬 연결한 것을 특징으로 하는 블록히터가 구성된 반도체 장비.2. The semiconductor device as claimed in claim 1, wherein the cartridge heating wires (5) are connected in series or in parallel with heating wires having the same amount of heat so as to have a stable amount of heat. 제1항에 있어서, 상기 블록히터(2)는 두 개의 분리된 몸체가 엇갈림 구조(9)로 형성되어 캐치 클립(6)에 의해 대칭 결합됨으로써 결합시 얼라인이 용이하고, 진공라인(3)에 대한 면접촉을 최대화하여 외부로의 열손실을 방지하는 것을 특징으로 하는 블록히터가 구성된 반도체 장비.The method of claim 1, wherein the block heater (2) is formed by the staggered structure (9) having two separate bodies are symmetrically coupled by the catch clip (6) is easy to align when combined, vacuum line (3) Block heater is configured semiconductor device, characterized in that to maximize the surface contact to prevent heat loss to the outside. 제5항에 있어서, 상기 캐치클립(6)은 일측 블록히터(2)에 힌지(65)가 설치된 고정부(63)에 의해 유동가능하게 고정된 고리(62)와, 타측 블록히터(2)에 힌지(66)가 설치된 고정부(64)에 의해 유동가능하게 고정되어 일정이상의 힘에 의해 밑으로 푸쉬되는 체결구(61)로 구성되어 있는 것을 특징으로 하는 블록히터가 구성된 반도체 장비.According to claim 5, The catch clip (6) is a loop 62 is fixedly movable by the fixing portion 63, the hinge 65 is installed on one block heater (2), and the other block heater (2) And a fastener (61) which is fixedly movable by a fixing part (64) provided with a hinge (66) and pushed downward by a predetermined force or more. 제1항에 있어서, 상기 써모커플(8)은 20~300℃의 온도 제어 범위를 갖는 것을 특징으로 하는 블록히터가 구성된 반도체 장비.The semiconductor device according to claim 1, wherein the thermocouple (8) has a temperature control range of 20 to 300 ° C.
KR1020070050296A 2007-05-23 2007-05-23 Semiconductor apparatus having block heater for preventing sticking foreign materials from vacuum line KR20080103246A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130117902A (en) * 2012-04-10 2013-10-29 주식회사 탑 엔지니어링 Vapor deposition apparatus comprising heat elements assembly for easily assembling and dismantling
KR20160103664A (en) * 2015-02-25 2016-09-02 (주)티티에스 Temperature control apparatus of load

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130117902A (en) * 2012-04-10 2013-10-29 주식회사 탑 엔지니어링 Vapor deposition apparatus comprising heat elements assembly for easily assembling and dismantling
KR20160103664A (en) * 2015-02-25 2016-09-02 (주)티티에스 Temperature control apparatus of load

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