KR20080092001A - Light emitting diode module for illumination - Google Patents

Light emitting diode module for illumination Download PDF

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Publication number
KR20080092001A
KR20080092001A KR1020070035240A KR20070035240A KR20080092001A KR 20080092001 A KR20080092001 A KR 20080092001A KR 1020070035240 A KR1020070035240 A KR 1020070035240A KR 20070035240 A KR20070035240 A KR 20070035240A KR 20080092001 A KR20080092001 A KR 20080092001A
Authority
KR
South Korea
Prior art keywords
led
light emitting
emitting diode
module
layer
Prior art date
Application number
KR1020070035240A
Other languages
Korean (ko)
Inventor
홍환영
Original Assignee
(주)아스트로
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by (주)아스트로 filed Critical (주)아스트로
Priority to KR1020070035240A priority Critical patent/KR20080092001A/en
Publication of KR20080092001A publication Critical patent/KR20080092001A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Abstract

A LED(Light Emitting Diode) module for illumination is provided to prevent the drop of brightness of the module and generate light with high brightness by coating a transparent gel typed silicon based material and a compound having silicon and phosphor on the LED device. A LED(Light Emitting Diode) module for illumination comprises first, second, and third layers. The first layer has metal PCBs(Printed Circuit Board,2,7) on which heating members are mounted. The second layer is connected with LED devices(8) and PCB patterns(6) by gold wires(5), which are laminated on epoxy resins(9) in which Ag particles are contained. The second layer is filled with a transparent gel typed silicon based material. The third layer is made of a compound(3) having silicon(4) and phosphor. An average diameter of the Ag particle is 20 to 400 nm. The transparent gel typed silicon based material is coated on the LED device uniformly.

Description

Light Emitting Diode Modules {LIGHT EMITTING DIODE MODULE FOR ILLUMINATION}

1 illustrates a configuration of a light emitting diode (LED) module for lighting according to the present invention.

<Explanation of symbols for main parts of the drawings>

1: appearance injection molding 2, 7: metal PCB

3: Blend of Silicone and Phosphor 4: Transparent Gel Type Silicone Material

5: gold wire 6: PCB pattern

8: LED Device 9: Ag / Epoxy

The present invention relates to a light emitting diode (LED) module for illumination. Specifically, the present invention maximizes the light of a light emitting diode (LED) device by using a transparent gel-type silicon-based material, and a combination of silicon and a phosphor to prevent the light diffusion and brightness deterioration due to precipitation of the phosphor. A light emitting diode (LED) module is provided.

A light emitting diode (LED) consists of a junction between a p-type and an n-type semiconductor, and is a type of optoelectronic device that emits energy corresponding to a band gap of a semiconductor in the form of light by combining electrons and holes when a voltage is applied. Light emitting diodes (LEDs) have been used as display and image light sources for electronic devices, including information and communication devices, and since the mid-1990s, blue LEDs have been developed to enable full-color displays. The light emitting diode (LED) light source is a light source with low heat loss, which consumes much less energy than incandescent bulbs, which can save energy, exhibit excellent characteristics in terms of life and maintenance, and are environmentally friendly with no mercury. Light-emitting diodes (LEDs) are widely used in general lighting, building decoration, mood lamps, vehicles, traffic signals, indoor and outdoor billboards, induction lamps, warning lights, light sources for various security equipment, and light sources for sterilization or disinfection. .

However, the conventional light emitting diode (LED) module has a problem in that the light diffusion and brightness decrease due to the precipitation of the phosphor. Therefore, there is a limit in generating high brightness light.

The present invention provides a light emitting diode for maximizing the light of a light emitting diode (LED) device by using a transparent gel-type silicon-based material and a combination of silicon and a phosphor to prevent the light diffusion and brightness deterioration due to the precipitation of the phosphor. It is an object to provide a (LED) module.

The present invention comprises a first layer made of a metal printed circuit board (PCB) mounted with a heat dissipation member; Light emitting diode (LED) elements stacked on an epoxy resin (Ag / epoxy) containing Ag particles and PCB patterns connected by gold wires are arranged at regular intervals. A second layer filled with a transparent gel-type silicon-based material; And it provides a light emitting diode (LED) module comprising a third layer consisting of a combination of silicon and phosphor.

Metal PCB (Printed Circuit Board) has better heat dissipation effect than general PCB. However, due to the trend of high density integration of the LED chip and small weight of the LED module, there may be a limit in dissipating a large amount of heat generated in the LED device, thereby minimizing the risk of damage to the LED device due to heat accompanying light emission. For this purpose, the metal PCB is preferably provided with a heat dissipation member. Therefore, in the light emitting diode (LED) module for lighting according to the present invention, the first layer is made of a metal printed circuit board (PCB) mounted with a heat dissipation member.

In the second layer constituting the light emitting diode (LED) module for lighting according to the present invention, there is provided a light emitting diode (LED) device laminated on an epoxy resin (Ag / epoxy) containing Ag (silver) particles; The PCB pattern is connected by gold wire. Ag / epoxy serves as a conductive adhesive, Ag (silver) particles can greatly improve the electrical conductivity and heat distortion temperature, and can prevent the modification of the epoxy resin. It is preferable that silver (Ag) particle | grains are 20-400 nm in average diameter. Light emitting diode (LED) elements stacked on epoxy resin (Ag / epoxy) containing Ag particles and individual LED chips with PCB patterns connected by gold wires are spaced at regular intervals. It is arranged. The remainder of the second layer is filled with a transparent gel-type silicon-based material, which is flat and homogeneous on the light emitting diode (LED) device. Therefore, it is possible to effectively prevent the phenomenon of deterioration of light diffusivity and brightness due to precipitation of the phosphor.

The third layer constituting the light emitting diode (LED) module for illumination according to the invention consists of a blend of silicon and phosphor. It is preferable that the compounding ratio of silicone and fluorescent substance is 0.1: 9.9-2.0: 8.0.

The light emitting diode (LED) module for lighting according to the present invention excites a YAG (yttrium aluminum garnet) -based yellow light emitter in an indium gallium nitride (InGaN) -based blue light emitting diode (LED), for example, in implementing a white light source. Or a method of exciting red (R) / green (G) / blue (B) phosphor in an ultraviolet light emitting diode (UV LED). In addition, it is possible to produce various kinds of emission colors in addition to the white light by the combination of various phosphors, thereby increasing the application range as illumination.

The manufacturing process of the light emitting diode (LED) module for lighting according to the present invention is as follows: The LED device is laminated on an epoxy resin (Ag / epoxy) containing Ag (silver) particles and then reflowed. It is connected to the PCB pattern by gold wire bonding. The individual LED chips thus made are arranged at regular intervals, and the transparent gel-type silicon-based material is applied flatly and homogeneously on the LED device, followed by hot air drying. The layer thus formed is the second layer. Subsequently, a mixture of silicon and phosphor is uniformly coated on the second layer, followed by hot air drying to laminate the third layer. Subsequently, after setting a metal PCB (first layer) on which the heat dissipation member is mounted, the second layer and the third layer are laminated and integrated thereon. Thereafter, it is shipped through a varnish process, an assembly process, a performance test process, a packaging process, and the like.

In the light emitting diode (LED) module according to the present invention, since a transparent gel-type silicon-based material and a mixture of silicon and a phosphor are sequentially applied on the LED device, the light diffusion and brightness deterioration due to precipitation of the phosphor are prevented. It can be prevented to maximize the light of the light emitting diode (LED) device, thereby generating a high brightness light.

Claims (5)

A first layer made of a metal printed circuit board (PCB) mounted with a heat radiating member; Light emitting diode (LED) elements stacked on an epoxy resin (Ag / epoxy) containing Ag particles and PCB patterns connected by gold wires are arranged at regular intervals. A second layer filled with a transparent gel-type silicon-based material; And a third layer consisting of a combination of silicon and phosphor. The method of claim 1, The silver (Ag) particles have an average diameter of 20 to 400 nm, the light emitting diode (LED) module for illumination.  The method of claim 1, The light emitting diode (LED) module of claim 1, wherein the transparent gel-type silicon-based material is uniformly applied to the light emitting diode (LED) device.  The method of claim 1, The light emitting diode (LED) module for lighting, characterized in that the compounding ratio of the silicon and the phosphor is 0.1: 9.9 to 2.0: 8.0. The method according to claim 1, wherein The light emitting diode (LED) is a light emitting diode (LED) module, characterized in that the blue light emitting diode (LED) or ultraviolet (UV) light emitting diode (LED).
KR1020070035240A 2007-04-10 2007-04-10 Light emitting diode module for illumination KR20080092001A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020070035240A KR20080092001A (en) 2007-04-10 2007-04-10 Light emitting diode module for illumination

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070035240A KR20080092001A (en) 2007-04-10 2007-04-10 Light emitting diode module for illumination

Publications (1)

Publication Number Publication Date
KR20080092001A true KR20080092001A (en) 2008-10-15

Family

ID=40152325

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070035240A KR20080092001A (en) 2007-04-10 2007-04-10 Light emitting diode module for illumination

Country Status (1)

Country Link
KR (1) KR20080092001A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100958358B1 (en) * 2008-01-23 2010-05-17 앰코 테크놀로지 코리아 주식회사 Semiconductor package and method for manufacturing the same
CN107484333A (en) * 2017-09-18 2017-12-15 信利光电股份有限公司 The bottom plate and camera module of a kind of camera module

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100958358B1 (en) * 2008-01-23 2010-05-17 앰코 테크놀로지 코리아 주식회사 Semiconductor package and method for manufacturing the same
CN107484333A (en) * 2017-09-18 2017-12-15 信利光电股份有限公司 The bottom plate and camera module of a kind of camera module

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Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E902 Notification of reason for refusal
E601 Decision to refuse application