KR20080088126A - Nano-structures manufacturing equipement having partly controllable substrate in temperature and manufacturing method of nano-structures - Google Patents
Nano-structures manufacturing equipement having partly controllable substrate in temperature and manufacturing method of nano-structures Download PDFInfo
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- KR20080088126A KR20080088126A KR1020070030571A KR20070030571A KR20080088126A KR 20080088126 A KR20080088126 A KR 20080088126A KR 1020070030571 A KR1020070030571 A KR 1020070030571A KR 20070030571 A KR20070030571 A KR 20070030571A KR 20080088126 A KR20080088126 A KR 20080088126A
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- substrate
- temperature
- manufacturing
- gas
- nanostructure
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02603—Nanowires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02606—Nanotubes
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- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
1 is a view showing an embodiment of a nanostructure manufacturing apparatus using a conventional HVPE method.
Figure 2 is a view showing another embodiment of a nanostructure manufacturing apparatus using a conventional HVPE method.
3 is a local view of a substrate according to the present invention. Figure showing one embodiment of a nanostructure manufacturing apparatus having a substrate temperature control means capable of temperature control.
4 is a view showing a cooling gas path inside a substrate holder constituting the nanostructure manufacturing apparatus of FIG.
<Description of the symbols for the main parts of the drawings>
100,200: reactor 110,210: first gas injection pipe
120,220: second gas injection pipe 130,230: container
140,240 substrate holder 150,260 exhaust port
160,270 electric furnace 170: counter flow gas injection pipe
241: internal through hole 250: fluid inlet tube
A: Substrate
The present invention is a device for manufacturing a nanostructure by locally controlling the temperature of the substrate and a method of manufacturing the nanostructure, the reproducible high quality by locally controlling the temperature of the substrate without disturbing the gas flow inside the reactor An apparatus and method for manufacturing a nanostructure of the present invention are provided.
Semiconductor materials based on gallium nitride are attracting great attention as optical device materials that can emit light from the UV to the blue region because they have a very large direct transition energy band gap, and are in the form of epitaxy. We grow and use.
Representative methods for growing semiconductor materials in epitaxial form as described above include metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE) and hydride vapor phase epi A hybrid vapor phase epitaxy (HVPE) or the like is used.
The MOCVD or MBE method has a very advantageous advantage in growing high quality semiconductor epitaxy, but it is disadvantageous in that the manufacturing cost of the semiconductor material is high and the growth rate of the semiconductor material is slow.
In addition, the HVPE method is relatively inferior in the characteristics of epitaxial grown film, but it is possible to manufacture a semiconductor material at a low price. It is advantageous for the production of thick films.
Figure 1 shows an embodiment of a conventional apparatus for manufacturing a nanostructure by using the HVPE method, the first gas injection tube in which an inert gas, such as a halide gas is injected into the reactor 100 ( 110 and a second
In the method of manufacturing a nanostructure using the conventional nanostructure manufacturing apparatus configured as described above, a substrate formed of sapphire is first installed on the substrate holder, and then, Ga, which is a group III-element, is contained in the container. Next, the electric furnace is operated to maintain the temperature of the substrate at 400 to 600 ° C., and a halide gas is injected through the first gas inlet tube passing through the container to be mixed with Ga in the container to be introduced into the upper part of the substrate. Next, NH 3 gas is injected through the second
In order to fabricate the nanostructure using the conventional nanostructure manufacturing apparatus as described above, the temperature of the substrate must be maintained at 400 to 600 ° C using the device as described above, and the temperature inside the reactor is 400 to 600 ° C. Since the nanostructures should be manufactured in the maintained state, NH 3 provides a Group 5 element due to the relatively low temperature. There is a problem that gas decomposition does not occur well, and the degree of reactivity of GaCl generated by reacting the gallium contained in the container with the halide gas injected into the first gas pipe is inferior.
Next, Figure 2 shows another embodiment of a conventional apparatus for manufacturing a nanostructure using the HVPE method, as shown in Figure 1
However, the nanostructure manufacturing apparatus includes a counter flow gas injected through a flow gas injection pipe formed at a rear end, and a Halide gas and a V-group element injected through a first gas injection pipe and a second gas injection pipe formed at a front end thereof. As the vortices occur when the gases are included, the nanostructures are not properly formed on the substrate, and there is a problem in that the nanostructures formed on the substrate are not reproducible due to the irregularities of the vortices.
In addition, there is a problem in that the temperature of the periphery of the substrate is lowered not only by the influence of the counter flow gas, but also the reactivity of the NH 3 and GaCl gas is reduced on the substrate.
In order to solve the above problems, the present invention provides a substrate temperature control means for locally adjusting the temperature of the substrate locally in the substrate holder of the nanostructure manufacturing apparatus as shown in FIG. It is an object to lower only the temperature of the substrate placed in the holder to the formation temperature of the nanostructure.
In addition, by controlling the temperature of the substrate locally by using a substrate temperature adjusting means installed in the substrate holder, a disturbing factor is not generated in the flow of gas introduced through the first gas injection tube and the second gas injection tube inside the reactor. The internal temperature of the reactor is high in reproducibility of the high-quality nanostructure by maintaining the high reactivity of the Ga 3 generated by the reaction of the halogen gas and the gallium contained in the container with high decomposition of the NH 3 gas that provides the Group 5 element. It is another object to be able to form.
In order to achieve the above object, the present invention, in the nanostructure manufacturing apparatus having a substrate holder for placing the substrate, the substrate holder further comprises a substrate temperature adjusting means for locally controlling the temperature of the substrate Provided is a nanostructure manufacturing apparatus capable of local temperature control of a substrate.
In addition, using the nanostructure manufacturing apparatus using the nanostructure manufacturing apparatus, using a nanostructure manufacturing apparatus of claim 1, the step of installing a substrate on the substrate holder and containing the group III-element in the container; Operating an electric furnace to maintain a temperature inside the reactor at 700 to 1200 ° C; Maintaining the temperature of the substrate at the nanostructure growth temperature using the substrate temperature adjusting means while maintaining the temperature inside the reactor as described above; Injecting an inert gas through the first gas inlet tube passing through the vessel and reacting with a group III-element in the vessel to inject the upper portion of the substrate; It provides a nanostructure manufacturing method comprising the step of injecting a gas containing a V-group element through the second gas injection tube.
Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
Figure 3 shows an embodiment of an apparatus for manufacturing nanostructures using the HVPE method according to the present invention, inert gas such as a halide gas (halide gas) in the
In addition, an
Local temperature control of the substrate using the substrate temperature adjusting means assumes that the substrate and its surroundings are in a thermal equilibrium state by an electric furnace, and only the temperature of the substrate has little effect on the temperature around the substrate. It can be lowered up to 500 o C for.
4 shows an embodiment of a fluid flow circulating through the fluid inlet tube to an inner through
Method of manufacturing a gallium nitride-based nanostructures using the nanostructure manufacturing apparatus configured as described above, first, after the substrate (A) formed of sapphire, SiC, Si, GaAs, etc. on the
Next, the electric furnace was operated to change the temperature around the substrate inside the reactor to NH 3 , a gas containing a group V-element. The decomposition of the gas occurs well, and maintains the temperature at 700 ~ 1200 ℃ which can maintain a high reactivity with GaCl.
Next, in the state where the temperature inside the
Next, the inhaled gas, which is an inert gas, is injected through the first
As described above, the Ga element injected into the upper portion of the substrate through the first gas injection tube reacts with the V-group element injected through the second gas injection tube to grow a nanostructure having a group III-V molecular formula on the substrate.
In this case, the growth temperature of the substrate may be adjusted to form a thin film, a nanorod, a nanotube, a porous material, or the like having a III-V molecular formula.
As described above, the present invention describes a device and a method for manufacturing a nanostructure using the HVPE method, but in addition to the nanostructure device, all nanostructure manufacturing apparatuses having a substrate holder for placing a substrate in order to manufacture the nanostructures. It can be applied to locally control the temperature of the substrate.
While the present invention has been described with reference to the embodiments shown in the drawings, it is only for illustrating the invention, and those skilled in the art to which the present invention pertains various modifications or equivalents from the detailed description of the invention. It will be appreciated that one embodiment is possible. Therefore, the true scope of the present invention should be determined by the technical spirit of the claims.
As described above, according to the present invention, by installing the substrate temperature adjusting means in the substrate holder of the nanostructure manufacturing apparatus, only the temperature of the substrate placed in the substrate holder may be lowered to the growth temperature of the nanostructure regardless of the temperature inside the reactor.
In addition, by controlling the temperature of the substrate by the substrate temperature adjusting means installed in the substrate holder to prevent the disturbance factors in the flow of the gas flowing through the first gas injection pipe and the second gas injection pipe inside the reactor. In addition, the temperature inside the reactor can be reproducibly formed of high quality nanostructures by well decomposing NH 3 gas providing Group 5 elements and maintaining high reactivity with GaCl.
Claims (12)
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KR1020070030571A KR20080088126A (en) | 2007-03-28 | 2007-03-28 | Nano-structures manufacturing equipement having partly controllable substrate in temperature and manufacturing method of nano-structures |
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KR1020070030571A KR20080088126A (en) | 2007-03-28 | 2007-03-28 | Nano-structures manufacturing equipement having partly controllable substrate in temperature and manufacturing method of nano-structures |
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KR1020090029477A Division KR100980563B1 (en) | 2009-04-06 | 2009-04-06 | Nano-Structures Manufacturing Equipement Having Partly Controllable Substrate in Temperature and Manufacturing Method of Nano-Structures |
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