KR20080088126A - Nano-structures manufacturing equipement having partly controllable substrate in temperature and manufacturing method of nano-structures - Google Patents

Nano-structures manufacturing equipement having partly controllable substrate in temperature and manufacturing method of nano-structures Download PDF

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Publication number
KR20080088126A
KR20080088126A KR1020070030571A KR20070030571A KR20080088126A KR 20080088126 A KR20080088126 A KR 20080088126A KR 1020070030571 A KR1020070030571 A KR 1020070030571A KR 20070030571 A KR20070030571 A KR 20070030571A KR 20080088126 A KR20080088126 A KR 20080088126A
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KR
South Korea
Prior art keywords
substrate
temperature
manufacturing
gas
nanostructure
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KR1020070030571A
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Korean (ko)
Inventor
김진교
이상화
Original Assignee
경희대학교 산학협력단
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Priority to KR1020070030571A priority Critical patent/KR20080088126A/en
Publication of KR20080088126A publication Critical patent/KR20080088126A/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02603—Nanowires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02606—Nanotubes

Abstract

An apparatus for manufacturing a nano-structure having a partly controllable substrate in temperature and a manufacturing method of a nano-structure are provided to lower only temperature of a substrate by installing a substrate temperature control unit on a substrate holder. An apparatus for manufacturing a nano-structure includes a substrate holder(240) on which a substrate(A) is loaded. The substrate holder includes a substrate temperature control unit for controlling locally the temperature of the substrate. The substrate temperature control unit includes a through-hole(241) formed in the substrate holder and a fluid implantation tube(250) for supplying a temperature controllable fluid into the through-hole. The temperature controllable fluid is one of gas, liquid or gel. The substrate temperature control unit is an electrical cooler installed at a lower end of the substrate holder.

Description

Nano-Structures Manufacturing Equipement Having Partly Controllable Substrate in Temperature and Manufacturing Method of Nano-Structures}

1 is a view showing an embodiment of a nanostructure manufacturing apparatus using a conventional HVPE method.

Figure 2 is a view showing another embodiment of a nanostructure manufacturing apparatus using a conventional HVPE method.

3 is a local view of a substrate according to the present invention. Figure showing one embodiment of a nanostructure manufacturing apparatus having a substrate temperature control means capable of temperature control.

4 is a view showing a cooling gas path inside a substrate holder constituting the nanostructure manufacturing apparatus of FIG.

<Description of the symbols for the main parts of the drawings>

100,200: reactor 110,210: first gas injection pipe

120,220: second gas injection pipe 130,230: container

140,240 substrate holder 150,260 exhaust port

160,270 electric furnace 170: counter flow gas injection pipe

241: internal through hole 250: fluid inlet tube

A: Substrate

The present invention is a device for manufacturing a nanostructure by locally controlling the temperature of the substrate and a method of manufacturing the nanostructure, the reproducible high quality by locally controlling the temperature of the substrate without disturbing the gas flow inside the reactor An apparatus and method for manufacturing a nanostructure of the present invention are provided.

Semiconductor materials based on gallium nitride are attracting great attention as optical device materials that can emit light from the UV to the blue region because they have a very large direct transition energy band gap, and are in the form of epitaxy. We grow and use.

Representative methods for growing semiconductor materials in epitaxial form as described above include metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE) and hydride vapor phase epi A hybrid vapor phase epitaxy (HVPE) or the like is used.

The MOCVD or MBE method has a very advantageous advantage in growing high quality semiconductor epitaxy, but it is disadvantageous in that the manufacturing cost of the semiconductor material is high and the growth rate of the semiconductor material is slow.

In addition, the HVPE method is relatively inferior in the characteristics of epitaxial grown film, but it is possible to manufacture a semiconductor material at a low price. It is advantageous for the production of thick films.

Figure 1 shows an embodiment of a conventional apparatus for manufacturing a nanostructure by using the HVPE method, the first gas injection tube in which an inert gas, such as a halide gas is injected into the reactor 100 ( 110 and a second gas injection tube 120 into which a gas containing a V-group element such as NH 3 is injected, is formed, and a middle group of the III gas such as Ga is contained in the middle of the first gas injection tube 110. The container 130 is installed. In addition, a substrate holder 140 for placing a substrate A such as sapphire is installed in the reactor 100, and an exhaust port 150 for exhausting reaction gases is formed at the other side. In addition, an electric furnace 160 is installed on the outer wall of the reactor 100 to control the temperature of the reactor 100.

In the method of manufacturing a nanostructure using the conventional nanostructure manufacturing apparatus configured as described above, a substrate formed of sapphire is first installed on the substrate holder, and then, Ga, which is a group III-element, is contained in the container. Next, the electric furnace is operated to maintain the temperature of the substrate at 400 to 600 ° C., and a halide gas is injected through the first gas inlet tube passing through the container to be mixed with Ga in the container to be introduced into the upper part of the substrate. Next, NH 3 gas is injected through the second gas injection pipe 120 while the mother substrate is maintained at the above temperature. As described above, Ga injected into the upper portion of the substrate through the first gas injection tube reacts with NH 3 gas injected through the second gas injection tube to grow the gallium nitride nanostructure on the upper portion of the substrate. In this case, the substrate may be formed to have a structure such as a thin film, a nanorod, a nanotube, a porous material, and the like according to the growth temperature of the substrate.

In order to fabricate the nanostructure using the conventional nanostructure manufacturing apparatus as described above, the temperature of the substrate must be maintained at 400 to 600 ° C using the device as described above, and the temperature inside the reactor is 400 to 600 ° C. Since the nanostructures should be manufactured in the maintained state, NH 3 provides a Group 5 element due to the relatively low temperature. There is a problem that gas decomposition does not occur well, and the degree of reactivity of GaCl generated by reacting the gallium contained in the container with the halide gas injected into the first gas pipe is inferior.

Next, Figure 2 shows another embodiment of a conventional apparatus for manufacturing a nanostructure using the HVPE method, as shown in Figure 1 reactor 100, the first gas injection pipe 110, the second gas An injection tube 120, a container 130, a substrate A, a substrate holder 140, an exhaust port 150, and an electric furnace 160 are provided, and a counter flow gas is provided at a rear end of the reactor 100. The counter flow gas injection pipe 170 which can inject) has a further configuration. That is, by injecting the counter flow gas through the counter flow gas injection tube 170 to generate a counter flow inside the reactor, the temperature of the substrate is maintained at 400 ~ 600 ℃ without lowering the temperature of the entire inside of the reactor nanostructure Is a device that can be formed.

However, the nanostructure manufacturing apparatus includes a counter flow gas injected through a flow gas injection pipe formed at a rear end, and a Halide gas and a V-group element injected through a first gas injection pipe and a second gas injection pipe formed at a front end thereof. As the vortices occur when the gases are included, the nanostructures are not properly formed on the substrate, and there is a problem in that the nanostructures formed on the substrate are not reproducible due to the irregularities of the vortices.

In addition, there is a problem in that the temperature of the periphery of the substrate is lowered not only by the influence of the counter flow gas, but also the reactivity of the NH 3 and GaCl gas is reduced on the substrate.

In order to solve the above problems, the present invention provides a substrate temperature control means for locally adjusting the temperature of the substrate locally in the substrate holder of the nanostructure manufacturing apparatus as shown in FIG. It is an object to lower only the temperature of the substrate placed in the holder to the formation temperature of the nanostructure.

In addition, by controlling the temperature of the substrate locally by using a substrate temperature adjusting means installed in the substrate holder, a disturbing factor is not generated in the flow of gas introduced through the first gas injection tube and the second gas injection tube inside the reactor. The internal temperature of the reactor is high in reproducibility of the high-quality nanostructure by maintaining the high reactivity of the Ga 3 generated by the reaction of the halogen gas and the gallium contained in the container with high decomposition of the NH 3 gas that provides the Group 5 element. It is another object to be able to form.

In order to achieve the above object, the present invention, in the nanostructure manufacturing apparatus having a substrate holder for placing the substrate, the substrate holder further comprises a substrate temperature adjusting means for locally controlling the temperature of the substrate Provided is a nanostructure manufacturing apparatus capable of local temperature control of a substrate.

In addition, using the nanostructure manufacturing apparatus using the nanostructure manufacturing apparatus, using a nanostructure manufacturing apparatus of claim 1, the step of installing a substrate on the substrate holder and containing the group III-element in the container; Operating an electric furnace to maintain a temperature inside the reactor at 700 to 1200 ° C; Maintaining the temperature of the substrate at the nanostructure growth temperature using the substrate temperature adjusting means while maintaining the temperature inside the reactor as described above; Injecting an inert gas through the first gas inlet tube passing through the vessel and reacting with a group III-element in the vessel to inject the upper portion of the substrate; It provides a nanostructure manufacturing method comprising the step of injecting a gas containing a V-group element through the second gas injection tube.

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

Figure 3 shows an embodiment of an apparatus for manufacturing nanostructures using the HVPE method according to the present invention, inert gas such as a halide gas (halide gas) in the reactor 200 is maintained in a vacuum state The first gas injection pipe 210 is injected and the second gas injection pipe 220 is formed is injected, the gas containing a V-group element, such as NH 3 is formed, the middle of the first gas injection pipe 210 The container 130 for containing III-groups, such as Ga, is provided in it. In addition, inside the reactor 200, a substrate temperature adjusting means is disposed to settle the substrate A such as sapphire and locally control the temperature of the substrate. In this case, the local control temperature means to form a through hole 241 inside the substrate holder 240 in order to circulate a fluid such as gas, liquid, gel from the outside, the inner through hole 241 of the substrate holder 240 Is connected to install a fluid injection tube 250 for injecting outside air. In addition, the temperature of the substrate may be adjusted by installing an electrical cooling device on the substrate holder 240.

In addition, an exhaust port 260 for exhausting the reaction gases is formed at the other side, and an electric furnace 270 is installed at the outer wall of the reactor 200 to control the temperature of the reaction tube 200.

Local temperature control of the substrate using the substrate temperature adjusting means assumes that the substrate and its surroundings are in a thermal equilibrium state by an electric furnace, and only the temperature of the substrate has little effect on the temperature around the substrate. It can be lowered up to 500 o C for.

4 shows an embodiment of a fluid flow circulating through the fluid inlet tube to an inner through hole 241 formed in the substrate holder 240.

Method of manufacturing a gallium nitride-based nanostructures using the nanostructure manufacturing apparatus configured as described above, first, after the substrate (A) formed of sapphire, SiC, Si, GaAs, etc. on the substrate holder 240 is installed, The container contains Ga, which is a III-group element.

Next, the electric furnace was operated to change the temperature around the substrate inside the reactor to NH 3 , a gas containing a group V-element. The decomposition of the gas occurs well, and maintains the temperature at 700 ~ 1200 ℃ which can maintain a high reactivity with GaCl.

Next, in the state where the temperature inside the reactor 200 is maintained as described above, the fluid is circulated through the fluid injection tube 250 to the internal through holes 241 of the substrate holder 240 to increase the temperature of the substrate. Maintain at 100 ~ 700 ℃.

Next, the inhaled gas, which is an inert gas, is injected through the first gas injection pipe 110 passing through the container 130 to react with Ga in the container to be introduced into the substrate A. Next, NH 3 , which is a V-group element, is introduced through the second gas injection tube 220 while the substrate is maintained at the above temperature.

As described above, the Ga element injected into the upper portion of the substrate through the first gas injection tube reacts with the V-group element injected through the second gas injection tube to grow a nanostructure having a group III-V molecular formula on the substrate.

In this case, the growth temperature of the substrate may be adjusted to form a thin film, a nanorod, a nanotube, a porous material, or the like having a III-V molecular formula.

As described above, the present invention describes a device and a method for manufacturing a nanostructure using the HVPE method, but in addition to the nanostructure device, all nanostructure manufacturing apparatuses having a substrate holder for placing a substrate in order to manufacture the nanostructures. It can be applied to locally control the temperature of the substrate.

While the present invention has been described with reference to the embodiments shown in the drawings, it is only for illustrating the invention, and those skilled in the art to which the present invention pertains various modifications or equivalents from the detailed description of the invention. It will be appreciated that one embodiment is possible. Therefore, the true scope of the present invention should be determined by the technical spirit of the claims.

As described above, according to the present invention, by installing the substrate temperature adjusting means in the substrate holder of the nanostructure manufacturing apparatus, only the temperature of the substrate placed in the substrate holder may be lowered to the growth temperature of the nanostructure regardless of the temperature inside the reactor.

In addition, by controlling the temperature of the substrate by the substrate temperature adjusting means installed in the substrate holder to prevent the disturbance factors in the flow of the gas flowing through the first gas injection pipe and the second gas injection pipe inside the reactor. In addition, the temperature inside the reactor can be reproducibly formed of high quality nanostructures by well decomposing NH 3 gas providing Group 5 elements and maintaining high reactivity with GaCl.

Claims (12)

In the nanostructure manufacturing apparatus having a substrate holder for placing a substrate, The substrate holder is a nanostructure manufacturing apparatus capable of local temperature control of the substrate further comprises a substrate temperature control means for locally controlling the temperature of the substrate. The method of claim 1, The substrate temperature control means, A through hole formed in the substrate holder; Apparatus for producing a local temperature control of the substrate, characterized in that consisting of a fluid injection tube for supplying a temperature control fluid to the through hole. The method of claim 2, The fluid injected into the fluid injection tube, Nanostructure manufacturing apparatus capable of local temperature control of the substrate, characterized in that any one of gas, liquid or gel. The method of claim 1, The substrate temperature control means, An apparatus for manufacturing nanostructures capable of locally controlling a substrate, wherein the substrate is an electric cooler installed at a bottom of the substrate holder. The method of claim 1, The temperature of the substrate is maintained by the substrate temperature control means is a nanostructure manufacturing apparatus capable of local temperature control of the substrate, characterized in that 100 ~ 700 ℃. The method of claim 1, The apparatus of claim 1, wherein the substrate temperature is controlled by controlling the temperature of the substrate to produce any one of a thin film, a nanorod, a nanotube, and a porous. Using the nanostructure manufacturing apparatus of claim 1, Placing a substrate on top of the substrate holder and containing the group III-element in the container; Operating an electric furnace to maintain a temperature inside the reactor at 700 to 1200 ° C; Maintaining the temperature of the substrate at the nanostructure growth temperature using the substrate temperature adjusting means while maintaining the temperature inside the reactor as described above; Injecting an inert gas through the first gas inlet tube passing through the vessel and injecting the upper portion of the substrate to react with the group III-element in the vessel; Nano-structure manufacturing method comprising the step of injecting a gas containing a V-group element through the second gas injection tube. The method of claim 7, wherein The gas containing a group V-element is NH 3 characterized in that the manufacturing method. The method of claim 7, wherein The inert gas is a method of manufacturing a nanostructure, characterized in that the halide gas. The method of claim 7, wherein The group III-element is a nanostructure manufacturing method characterized in that the Ga. The method of claim 7, wherein Nanostructure manufacturing method characterized in that the temperature of the substrate is maintained at 100 ~ 700 ℃. The method of claim 7, wherein The temperature of the substrate is adjusted to the growth temperature of any one of thin film, nanorod, nanotube or porous material by controlling the amount of fluid injected into the external air inlet, and thus any one of thin film, nanorod, nanotube or porous material. Nanostructure manufacturing method, characterized in that for preparing.
KR1020070030571A 2007-03-28 2007-03-28 Nano-structures manufacturing equipement having partly controllable substrate in temperature and manufacturing method of nano-structures KR20080088126A (en)

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KR1020090029477A Division KR100980563B1 (en) 2009-04-06 2009-04-06 Nano-Structures Manufacturing Equipement Having Partly Controllable Substrate in Temperature and Manufacturing Method of Nano-Structures

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