KR20080086662A - Method of varying surface roughness in ito transparent conductive film - Google Patents

Method of varying surface roughness in ito transparent conductive film Download PDF

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KR20080086662A
KR20080086662A KR1020070028629A KR20070028629A KR20080086662A KR 20080086662 A KR20080086662 A KR 20080086662A KR 1020070028629 A KR1020070028629 A KR 1020070028629A KR 20070028629 A KR20070028629 A KR 20070028629A KR 20080086662 A KR20080086662 A KR 20080086662A
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conductive film
transparent conductive
ito transparent
gas
surface roughness
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김관수
양승호
최현
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희성금속 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments

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Abstract

A method of varying a surface roughness in an ITO transparent conductive film is provided to change a property of the ITO transparent conductive film by changing a kind and injection time of an injected gas. A gas is injected into a sputter chamber. An ITO(Indium Tin Oxide) transparent conduction film is formed at a low-vacuum atmosphere, where an injected gas remains, during the gas injecting process. The ITO transparent conduction film is heat-treated. The injected gas is one of air, O2, and N2. The low-vacuum atmosphere lies between 1*10^-4 and 1*10^-2 Pa. The heat-treatment is performed at a temperature between 100 and 500 °C. Oxygen or argon gas is added during the heat-treatment process.

Description

ＩＴＯ 투명도전막의 표면조도 제어방법{Method of varying surface roughness in ITO transparent conductive film}Method of varying surface roughness in ITO transparent conductive film

도 1은 본 발명에 따른 ITO 투명 도전막의 제조단계를 설명하기 위한 플로차트이다.1 is a flowchart for explaining a manufacturing step of the ITO transparent conductive film according to the present invention.

본 발명은 평판 디스플레이에 사용되는 ITO 투명도전막에 관한 것으로서, 더욱 상세하게는, ITO 투명도전막을 제조할 때 특정한 가스를 주입한 후, 챔버를 저진공 분위기로 하여 상기 특정한 가스를 잔류시킨 후 스퍼터를 진행함으로써 박막의 표면조도를 제어하는 방법에 관한 것이다.The present invention relates to an ITO transparent conductive film used in a flat panel display, and more particularly, after the injection of a specific gas when manufacturing the ITO transparent conductive film, leaving the specific gas in a chamber in a low vacuum atmosphere, and then sputtering The present invention relates to a method of controlling the surface roughness of a thin film.

일반적으로, 투명도전막으로 가장 널리 사용되는 재료는 인듐 주석 산화물(Tin Doped Indium Oxide:ITO)로서, 이는 다른 재료에 비해 높은 가시광 투과율을 유지하면서 낮은 저항을 가진다.In general, the most widely used material as a transparent conductive film is Tin Doped Indium Oxide (ITO), which has a low resistance while maintaining a high visible light transmittance compared to other materials.

이러한 ITO 박막을 기판에 증착하기 위한 종래의 방법으로는, DC-마그네트론 스퍼터링(DC-Magnetron Sputtering), RF-스퍼터링(RF-Sputtering), 이온빔 스퍼터링(Ion Beam Sputtering), 전자빔 증발증착법(e-Beam Evaporation) 등의 물리적 증 착법(Physical Vapor Deposition)과, 졸-겔(Sol-Gel), 스프레이 파이로리시스(Spray Pyrolysis) 등의 화학적 증착법(Chemical Vapor Deposition)이 사용되었다.Conventional methods for depositing such ITO thin films on substrates include DC-Magnetron Sputtering, RF-Sputtering, Ion Beam Sputtering, and E-Beam Physical vapor deposition such as evaporation, and chemical vapor deposition such as sol-gel and spray pyrolysis were used.

그 중에서, 특히, DC-마그네트론 스퍼터링은, 고품질의 박막특성과 높은 양산성으로 인해, 액정 디스플레이나 플라즈마 디스플레이 패널의 제조에 가장 많이 적용되고 있다.Among them, in particular, DC-magnetron sputtering is most applied to the manufacture of liquid crystal displays and plasma display panels due to the high quality thin film properties and high mass productivity.

상기한 바와 같이, DC-마그네트론 스퍼터링으로 ITO 박막을 제조하게 되면, 스퍼터링 입자에 의한 재스퍼터링과 높은 스퍼터 에너지로 인한 결정화에 의해 불균일한 입자 성장으로 높은 표면조도가 구현될 수 있다. As described above, when the ITO thin film is manufactured by DC-magnetron sputtering, high surface roughness may be realized due to uneven grain growth by resputtering by sputtered particles and crystallization due to high sputter energy.

이러한 높은 표면조도를 제어하기 위해, 이온빔 스퍼터링이나 이온 플레이팅과 같은 박막 제조방법이 고안되었으나, 장치적인 한계로 인해 대형화 및 양산화에 어려움이 있다. 또한, DC 마그네트론 스퍼터링에 있어서, 파워를 낮춘다거나 결정화를 촉진시키는 산소량을 낮추는 등의 공정조건 조절로 표면조도의 제어가 가능하나, 이는 박막 제조시간이 증가하거나 막 품질의 저하와 같은 단점을 유발함으로 인해 실제 제품에 적용하기는 어려운 상황이다.In order to control such high surface roughness, a thin film manufacturing method such as ion beam sputtering or ion plating has been devised, but it is difficult to enlarge and mass produce due to mechanical limitations. In addition, in the DC magnetron sputtering, it is possible to control the surface roughness by adjusting process conditions such as lowering the power or lowering the amount of oxygen to promote crystallization. This is difficult to apply to the actual product.

따라서 본 발명은, 상기한 바와 같은 종래기술의 문제점을 해결하기 위해 고안된 것으로서, 챔버 내의 잔류 가스에 의해 ITO 투명도전막의 표면조도를 제어하는 방법을 제공하는 것을 그 목적으로 하는 것이다.Accordingly, an object of the present invention is to provide a method of controlling the surface roughness of an ITO transparent conductive film by residual gas in a chamber, which is designed to solve the problems of the prior art as described above.

또한, 본 발명의 다른 목적은, 요구되는 표면조도가 각각 다른 다양한 종류 의 평판 디스플레이에 적용 가능하도록 ITO 투명도전막의 표면조도를 선택적으로 제어할 수 있는 방법을 제공하는 것이다.Another object of the present invention is to provide a method capable of selectively controlling the surface roughness of the ITO transparent conductive film so as to be applicable to various kinds of flat panel displays having different required surface roughness.

상기한 바와 같은 목적을 달성하기 위해, 본 발명에 따르면, ITO 투명도전막의 표면조도 제어방법에 있어서, 스퍼터 챔버 내에 가스를 주입하는 단계와, 상기 가스를 주입하는 단계에서 주입된 가스가 잔류할 수 있는 저진공 분위기에서 ITO 투명도전막을 제조하는 단계와, 상기 ITO 투명도전막을 제조하는 단계에서 제조된 ITO 투명도전막을 가스 분위기에서 열처리하는 단계를 포함하여 구성된 것을 특징으로 하는 ITO 투명도전막의 표면조도 제어방법이 제공된다.In order to achieve the above object, according to the present invention, in the method of controlling the surface roughness of the ITO transparent conductive film, injecting a gas into the sputter chamber, and the gas injected in the step of injecting the gas may remain Surface roughness control of the ITO transparent conductive film comprising the step of manufacturing an ITO transparent conductive film in a low vacuum atmosphere, and the step of heat-treating the ITO transparent conductive film prepared in the step of manufacturing the ITO transparent conductive film in a gas atmosphere A method is provided.

이하, 첨부된 도면을 참조하여 본 발명의 구체적인 실시예에 대하여 상세히 설명한다.Hereinafter, with reference to the accompanying drawings will be described in detail a specific embodiment of the present invention.

도 1은, 본 발명에 따른 ITO 투명도전막의 제조공정을 나타낸 플로차트이다.1 is a flowchart showing a manufacturing process of an ITO transparent conductive film according to the present invention.

도 1에 나타낸 바와 같이, 우선, 챔버 내에 가스를 주입한다(단계(S1)). 이때, 챔버 내에 주입되는 가스는, 저진공 분위기 형성시 챔버 내에 잔류하여 박막제조 초기에 막질을 제어한다. 이후 제조되는 박막의 막질은 초기에 제어된 막질에 따라 형성되어, 최종적으로 제조된 ITO 투명도전막의 표면조도를 제어하게 된다.As shown in FIG. 1, first, gas is injected into a chamber (step S1). At this time, the gas injected into the chamber remains in the chamber when the low vacuum atmosphere is formed to control the film quality at the initial stage of thin film manufacturing. After that, the film quality of the manufactured thin film is initially formed according to the controlled film quality, thereby controlling the surface roughness of the finally prepared ITO transparent conductive film.

다음으로, 상기 단계(S1)에서 가스주입이 끝난 후, 저진공 분위기 하에서 DC 마그네트론 스퍼터링을 통해 ITO 투명도전막을 제조한다(단계(S2)).Next, after the gas injection in the step (S1), the ITO transparent conductive film is manufactured by DC magnetron sputtering in a low vacuum atmosphere (step S2).

여기서, 종래의 반응성 스퍼터 공정에서 ITO 투명도전막을 제조할 때 지속적 으로 투입되는 가스는, ITO 투명도전막의 전기적 특성을 열화시킬 가능성을 배제하기 위해 아르곤(Ar), 산소(O2), 수소(H2) 등으로 제한되나, 본 발명에 따른 제조방법에서는, 종래의 반응성 스퍼터 공정과는 달리, 상기 가스는 대기(Air), 질소(N2), 산소(O2) 중 하나이며, 1 ~ 100sccm으로 10 ~ 1,000분 동안 주입한다.Here, the gas continuously injected when manufacturing the ITO transparent conductive film in the conventional reactive sputtering process, argon (Ar), oxygen (O 2 ), hydrogen (H) to exclude the possibility of deteriorating the electrical characteristics of the ITO transparent conductive film 2 ) and the like, in the manufacturing method according to the present invention, unlike the conventional reactive sputtering process, the gas is one of the air (Air), nitrogen (N 2 ), oxygen (O 2 ), 1 ~ 100sccm Inject for 10 to 1,000 minutes.

또한, 상기 ITO 투명도전막을 제조하기 위한 초기 진공은 1 ×10-4 Pa ~ 1 ×10-2 Pa의 저진공인 것을 특징으로 한다.In addition, the initial vacuum for producing the ITO transparent conductive film is characterized in that the low vacuum of 1 × 10 -4 Pa ~ 1 × 10 -2 Pa.

그 후, 상기한 바와 같이 하여 제조된 ITO 투명도전막에 열처리를 실시한다(단계(S3)).Thereafter, heat treatment is performed on the ITO transparent conductive film prepared as described above (step S3).

이때, 상기 열처리는 100℃ ~ 500℃ 사이에서 실시되며, 필요에 따라 결정화를 촉진시키기 위하여 산소(O2) 가스를 첨가하거나, 또는, 반응성을 제거하기 위하여 아르곤(Ar) 가스가 첨가될 수 있다.At this time, the heat treatment is carried out between 100 ℃ ~ 500 ℃, if necessary, oxygen (O2) gas may be added to promote crystallization, or argon (Ar) gas may be added to remove the reactivity.

이상 상기한 바와 같이 하여, 표면조도가 제어된 ITO 투명도전막을 제조할 수 있게 된다.As described above, the ITO transparent conductive film whose surface roughness is controlled can be manufactured.

이하, 상기한 바와 같은, 본 발명에 따른 ITO 투명도전막의 표면조도 제어방법에 대한 구체적인 실시예에 대하여 상세히 설명한다.Hereinafter, a specific embodiment of the surface roughness control method of the ITO transparent conductive film according to the present invention as described above will be described in detail.

[실시예]EXAMPLE

우선, 스퍼터 챔버 내에 가스를 10sccm으로 60분간 주입한다. 이때, 주입 되는 가스는 대기(Air), 질소(N2), 산소(O2) 중 하나로 선택된다. First, gas is injected into the sputter chamber at 10 sccm for 60 minutes. In this case, the injected gas is selected from one of air, nitrogen (N 2 ), and oxygen (O 2 ).

가스 주입이 완료된 후, 챔버 내를 진공 분위기로 만든다. 이때, 진공은 주입된 가스가 잔류하도록 1 ×10-3 Pa로 유지한다. After the gas injection is complete, the chamber is brought into a vacuum atmosphere. At this time, the vacuum is maintained at 1 × 10 -3 Pa so that the injected gas remains.

이어, 잔류 가스가 남아있는 챔버에 기판을 장착한 후, DC 마그네트론 스퍼터를 사용하여 아르곤(Ar) 100sccm, 산소(O2) 0.4sccm을 주입하면서 1kW의 전력으로 상온에서 ITO 투명도전막을 1500Å 제조한다. Subsequently, after mounting the substrate in the chamber in which residual gas remains, the ITO transparent conductive film is manufactured at room temperature at a power of 1 kW while injecting 100 sccm of argon (Ar) and 0.4 sccm of oxygen (O 2 ) using a DC magnetron sputter. .

그 후, 제조된 ITO 투명도전막을 진공 중에서 250℃로 5분간 열처리하여 결정화시킨다. Thereafter, the prepared ITO transparent conductive film is heat-treated at 250 ° C. for 5 minutes in vacuum to crystallize.

다음으로, 상기한 바와 같이 하여 제조된 ITO 투명도전막의 표면조도를 측정하여 표 1에 나타내었다. Next, the surface roughness of the ITO transparent conductive film prepared as described above is measured and shown in Table 1.

주입가스Injection gas RrmsRrms RpvRpv -- 1.858 nm1.858 nm 29.206 nm29.206 nm O2 O 2 1.520 nm1.520 nm 28.278 nm28.278 nm N2 N 2 0.803 nm0.803 nm 17.543 nm17.543 nm AirAir 0.926 nm0.926 nm 8.266 nm8.266 nm

따라서 표 1에 나타낸 바와 같이, 본 발명에 따른 제조방법에 의해 제조된 ITO 투명도전막은, 가스가 주입됨에 따라 표면조도가 제어되었으며, 주입되는 가스에 따라 각기 다른 표면조도가 구현되었음을 확인할 수 있다. Therefore, as shown in Table 1, the ITO transparent conductive film prepared by the manufacturing method according to the present invention, the surface roughness was controlled as the gas is injected, it can be seen that different surface roughness is implemented according to the injected gas.

즉, Rrms는 주입가스에 따라 산소(O2) -> 대기(Air) -> 질소(N2) 순으로 감소하였으며, Rpv는 주입가스에 따라 산소(O2) -> 질소(N2) -> 대기(Air) 순으로 감소하였음을 알 수 있다.That is, Rrms decreased in the order of oxygen (O 2 )->Air-> Nitrogen (N 2 ) according to the injection gas, and Rpv was oxygen (O 2 )-> nitrogen (N 2 )-depending on the injection gas. It can be seen that the decrease in order of> Air.

이상, 상기한 바와 같이, 본 발명의 구체적인 실시예와 관련하여 본 발명을 설명하였으나, 본 발명은 상기한 실시예의 경우로만 한정되는 것은 아니며, 본 발명의 취지 및 본질을 벗어나지 않는 범위 내에서 설계상의 필요 및 기타 다른 요인에 의해 다양한 수정 및 변경 등이 있을 수 있음은 당업자에게 있어 당연한 일이라 하겠다. As described above, the present invention has been described in connection with specific embodiments of the present invention, but the present invention is not limited to the above-described embodiments, and the present invention is not limited to the scope and spirit of the present invention. It will be apparent to those skilled in the art that various modifications and changes may be made due to necessity and other factors.

상기한 바와 같이 본 발명에 따르면, 가스 주입 후 잔류가스 분위기에서 ITO 투명도전막을 제조하면서 표면조도를 제어하는 것이 가능하므로, 주입하는 가스에 따라 다양한 종류의 평판 디스플레이에 적용 가능한 ITO 투명도전막 및 그 제조방법을 제공할 수 있다.As described above, according to the present invention, since it is possible to control the surface roughness while manufacturing the ITO transparent conductive film in a residual gas atmosphere after gas injection, the ITO transparent conductive film applicable to various types of flat panel display according to the gas to be injected and its manufacture It may provide a method.

즉, 본 발명에 따르면, 상기 실시예에 나타낸 바와 같이, 주입되는 가스의 종류와 주입되는 시간에 따라 제조되는 ITO 투명도전막의 표면조도를 제어가능하므로, 원하는 평판 디스플레이 패널의 요구 표면조도에 맞추어 주입되는 가스를 선택함으로써 용이하게 다양한 특성의 ITO 투명도전막을 제조할 수 있는 ITO 투명도전막의 표면조도 제어방법 및 용이하게 다양한 특성으로 제조될 수 있는 ITO 투명도전막을 제공할 수 있다.That is, according to the present invention, as shown in the above embodiment, the surface roughness of the ITO transparent conductive film manufactured according to the type of the gas to be injected and the time to be injected can be controlled, so that the surface roughness of the desired flat panel display panel It is possible to provide a method for controlling the surface roughness of the ITO transparent conductive film which can easily manufacture the ITO transparent conductive film having various characteristics by selecting a gas to be provided, and an ITO transparent conductive film which can be easily manufactured with various characteristics.

Claims (8)

ITO 투명도전막의 표면조도 제어방법에 있어서,In the surface roughness control method of the ITO transparent conductive film, 스퍼터 챔버 내에 가스를 주입하는 단계와,Injecting gas into the sputter chamber, 상기 가스를 주입하는 단계에서 주입된 가스가 잔류할 수 있는 저진공 분위기에서 ITO 투명도전막을 제조하는 단계와,Preparing an ITO transparent conductive film in a low vacuum atmosphere in which the gas injected in the gas injecting step can remain; 상기 ITO 투명도전막을 제조하는 단계에서 제조된 ITO 투명도전막을 가스 분위기에서 열처리하는 단계를 포함하여 구성된 것을 특징으로 하는 ITO 투명도전막의 표면조도 제어방법.Method for controlling the surface roughness of the ITO transparent conductive film, characterized in that comprising the step of heat-treating the ITO transparent conductive film prepared in the step of manufacturing the ITO transparent conductive film in a gas atmosphere. 제 1항에 있어서, The method of claim 1, 상기 가스를 주입하는 단계에서 주입되는 가스는 대기(Air), 산소(O2), 질소(N2) 중 하나인 것을 특징으로 하는 ITO 투명도전막의 표면조도 제어방법.The method of controlling the surface roughness of the ITO transparent conductive film, characterized in that the gas injected in the gas injection step is one of air, oxygen (O 2 ), nitrogen (N 2 ). 제 1항에 있어서, The method of claim 1, 상기 주입된 가스가 잔류할 수 있는 저진공 분위기는 1 ×10-4 Pa ~ 1 ×10-2 Pa 인 것을 특징으로 하는 ITO 투명도전막의 표면조도 제어방법.The low vacuum atmosphere in which the injected gas can remain is 1 × 10 -4 Pa ~ 1 × 10 -2 Pa The surface roughness control method of the ITO transparent conductive film, characterized in that. 제 1항에 있어서, The method of claim 1, 상기 열처리하는 단계에서, 상기 열처리의 온도는 100℃ ~ 500℃이며, 산소(O2) 또는 아르곤(Ar) 가스가 첨가되도록 구성된 것을 특징으로 하는 ITO 투명도전막의 표면조도 제어방법.In the heat treatment step, the temperature of the heat treatment is 100 ℃ ~ 500 ℃, the surface roughness control method of the ITO transparent conductive film, characterized in that configured to add oxygen (O 2 ) or argon (Ar) gas. 표면조도가 제어된 ITO 투명도전막에 있어서,In ITO transparent conductive film whose surface roughness is controlled, 스퍼터 챔버 내에 가스를 주입하고,Injecting gas into the sputter chamber, 상기 주입된 가스가 잔류할 수 있는 저진공 분위기에서 ITO 투명도전막을 제조하고,Preparing an ITO transparent conductive film in a low vacuum atmosphere in which the injected gas may remain; 상기 제조된 ITO 투명도전막을 가스 분위기에서 열처리하여 형성되는 것을 특징으로 하는 표면조도가 제어된 ITO 투명도전막.The surface roughness-controlled ITO transparent conductive film, characterized in that formed by heat-treating the prepared ITO transparent conductive film in a gas atmosphere. 제 5항에 있어서, The method of claim 5, 상기 주입되는 가스는 대기(Air), 산소(O2), 질소(N2) 중 하나인 것을 특징으로 하는 표면조도가 제어된 ITO 투명도전막.The injected gas is one of the air (Air), oxygen (O 2 ), nitrogen (N 2 ) ITO transparent conductive film having a controlled surface roughness. 제 5항에 있어서, The method of claim 5, 상기 주입된 가스가 잔류할 수 있는 저진공 분위기는 1 ×10-4 Pa ~ 1 ×10-2 Pa 인 것을 특징으로 하는 표면조도가 제어된 ITO 투명도전막.A low vacuum atmosphere in which the injected gas can remain is 1 × 10 -4 Pa ~ 1 × 10 -2 Pa, ITO transparent conductive film having a controlled surface roughness. 제 5항에 있어서, The method of claim 5, 상기 열처리의 온도는 100℃ ~ 500℃이며, 산소(O2) 또는 아르곤(Ar) 가스가 첨가되도록 구성된 것을 특징으로 하는 표면조도가 제어된 ITO 투명도전막.The temperature of the heat treatment is 100 ℃ ~ 500 ℃, ITO transparent conductive film with a controlled surface roughness, characterized in that configured to add oxygen (O 2 ) or argon (Ar) gas.
KR1020070028629A 2007-03-23 2007-03-23 Method of varying surface roughness in ito transparent conductive film KR20080086662A (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117758208A (en) * 2023-12-26 2024-03-26 聚灿光电科技（宿迁）有限公司 Coarsened ITO film layer preparation device and preparation method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117758208A (en) * 2023-12-26 2024-03-26 聚灿光电科技（宿迁）有限公司 Coarsened ITO film layer preparation device and preparation method
CN117758208B (en) * 2023-12-26 2024-05-28 聚灿光电科技（宿迁）有限公司 Coarsened ITO film layer preparation device and preparation method

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