KR20080083829A - Nitride semiconductor light emitting device and fabrication method thereof - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a GaN-based nitride light emitting device having improved electrostatic discharge (ESD) characteristics, and a method of manufacturing the same, wherein the first conductive nitride is formed on the substrate and includes a dielectric layer therein. A semiconductor layer, an active layer formed on the first conductivity type nitride semiconductor layer, a second conductivity type nitride semiconductor layer formed on the active layer, a transparent electrode layer formed on the second conductivity type nitride semiconductor layer, and the first The present invention provides a nitride semiconductor light emitting device including first and second electrodes formed on a second conductive nitride semiconductor, and a method of manufacturing the same.

Description

Nitride-based semiconductor light emitting device and its manufacturing method {NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF}

1 is a cross-sectional view showing the structure of a nitride semiconductor light emitting device (LED) according to the prior art.

2 is a cross-sectional view showing the structure of a nitride semiconductor light emitting device according to the present invention.

3 to 5 are exemplary views showing various forms of dielectric layers according to the present invention.

6A to 6F are process flowcharts showing a method of manufacturing a nitride semiconductor light emitting device according to the present invention.

<Explanation of symbols for main parts of the drawings>

100, 200: light emitting element 110, 210: substrate

112, 212: buffer layer 113, 213: n-type nitride semiconductor layer

114 and 214: active layer 115 and 215: p-type nitride semiconductor layer

116 and 216 transparent electrodes 117 and 217 n-type electrodes

118, 218: p-type electrode 120, 220: dielectric layer

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a nitride semiconductor light emitting device, and more particularly, to a nitride semiconductor light emitting device and a method of manufacturing the same to improve electrostatic discharge (ESD) characteristics of a GaN based nitride light emitting device.

GaN-based light emitting devices are generally known to have poor electrostatic properties compared to other compound light emitting devices. This is because a GaN light emitting device is formed on a sapphire substrate having a large lattice mismatch, and thus many crystal defects are formed in the GaN thin film due to a large lattice mismatch (16%) between the substrate and the grown thin film.

These crystal defects increase the leakage current of the device and when the external static electricity enters, the active layer of the light emitting device having many crystal defects is destroyed by the strong field. In general, it is known that crystal defects of about 10 ¹⁰ to 10 ¹² / cm ² exist in the GaN thin film.

The electrostatic breakdown characteristics of the light emitting device are very important in relation to the application range of the GaN light emitting device. In particular, the design of the device to withstand the static electricity generated from the equipment and the operator when packaging the light emitting device is a very important variable to improve the yield of the final device.

In particular, since the GaN-based light emitting device has been applied to a condition that is poor in outdoor signage and automotive lighting environment in recent years, electrostatic properties are considered more important. In general, ESD of conventional GaN light emitting devices can withstand up to thousands of volts in the forward direction under human body mode (HBM), but it is difficult to withstand hundreds of volts in the reverse direction.

The reason for this is that as mentioned earlier, the crystal defect of the device is the main reason, and the electrode design of the device is also very important. In particular, GaN light emitting device adopts sapphire substrate, which is a non-conductor, so that N-electrode and P-electrode are formed on the same surface. Worse. In order to improve these ESD characteristics, the conventional method is approaching from the device side. In some cases, a protection diode (generally a zener diode) is connected in reverse with the GaN light emitting device to prevent high voltage ESD from being injected into the GaN device in reverse, and a large capacitor is connected in parallel with the GaN light emitting device. Another method is to allow high voltage to flow through the capacitor.

However, adding additional ESD protection devices external to the device as described above is not desirable in terms of cost and yield. The most preferable method is to improve the ESD characteristics of the light emitting device itself by improving the thin film characteristics or the structure of the light emitting device. For this purpose, it is desirable to increase the quality of the GaN thin film fundamentally, but this is limited. To date, there is not much data on how to grow thin films to improve the ESD characteristics of GaN devices.

1 is a cross-sectional view illustrating a conventional nitride semiconductor light emitting device.

As shown in the drawing, the nitride semiconductor light emitting device 10 includes a buffer layer 12, a first conductivity type nitride semiconductor layer 13, and a multi-well GaN / InGaN active layer sequentially formed on the sapphire substrate 11. 14 and the second conductivity-type nitride semiconductor layer 15, wherein the second conductivity-type nitride semiconductor layer 15 and the active layer 14 are partially partially covered by a mesa etching process. As a result, the upper surface of the first conductivity type nitride semiconductor layer 120 is exposed.

The first conductivity type electrode 17 is formed on the exposed first conductivity type nitride semiconductor layer 13.

In addition, a transparent electrode 16 made of indium tin oxide (ITO) or the like is formed on the second conductivity type nitride semiconductor layer 15, and a second conductivity type 18 electrode is formed on the transparent electrode 16. Formed.

The conventional nitride semiconductor light emitting device 10 configured as described above has a GaN thin film due to a large lattice mismatch (16%) between the GaN thin films 12 and 13 grown on the sapphire substrate 11 as mentioned above. When a large number of crystal defects are formed to increase leakage current and external static electricity enters, there is a problem that the active layer of the light emitting device having many crystal defects is destroyed by a strong field.

In order to solve this problem, in Korean Patent Registration No. 10-0448351, when the first conductivity type nitride semiconductor layer 13 is formed of n-type GaN, the electrostatic voltage breakdown characteristic of the device is inserted by inserting a p-AlInGaN layer into the region 13. Although the level is improved, the level is about -1KV, which is less than the current -2KV required in the market.

Accordingly, the present invention has been made to solve the above problems, to provide a nitride semiconductor light emitting device and a method of manufacturing the same, which can improve the electrostatic voltage breakdown characteristics of the nitride semiconductor light emitting device to the level required by the current market There is.

The present invention for achieving the above object, the first conductive nitride semiconductor layer formed on the substrate, the dielectric layer therein, the active layer formed on the first conductive nitride semiconductor layer and A second conductive nitride semiconductor layer formed on the active layer, a transparent electrode layer formed on the second conductive nitride semiconductor layer, and first and second electrodes formed on the first and second conductive nitride semiconductors, respectively. It provides a nitride semiconductor light emitting device comprising a.

The dielectric layer is formed over the entire surface of the first conductive nitride semiconductor layer except for the contact region of the first electrode, and the dielectric layer may have a stripe pattern or a circular pattern. In addition, the dielectric layer may be formed in a pattern form of a polygonal structure.

In this case, the dielectric layer contains at least one or more of Zr, Si, Hf, Sr, Ti, and Ba, and is composed of at least one layer.

The first conductivity type nitride semiconductor layer is n type, the first conductivity type nitride semiconductor layer is p type, and the first conductivity type nitride semiconductor layer is a doped n type nitride semiconductor layer and n + type nitride semiconductor layer. The second conductive nitride semiconductor layer is formed by lamination, and includes an electron blocking layer.

The present invention also provides an active layer having a substrate, an n-type nitride semiconductor layer formed on the substrate and including a capacitor therein, a multi-quantum well structure formed on the n-type nitride semiconductor layer, and the active layer. A p-type nitride semiconductor layer formed on the substrate, a transparent electrode layer formed on the p-type nitride semiconductor layer, an n-type electrode formed on the n-type nitride semiconductor layer, and a p-type electrode formed on the p-type nitride semiconductor layer It provides a nitride semiconductor light emitting device comprising a.

The capacitor may be formed of a dielectric layer, wherein the dielectric layer may be formed in a stripe pattern or a pattern of a circular structure or a polygonal structure. The dielectric layer may include at least one of Zr, Si, Hf, Sr, Ti, and Ba, and may be composed of at least one layer.

In addition, the n-type nitride semiconductor layer includes an n-type GaN layer and an n ⁺ -type GaN layer, and the p-type nitride semiconductor layer includes an electron blocking layer. In this case, the electron blocking layer is preferably composed of an AlGaN layer.

The present invention also provides a method of preparing a substrate, forming an n-type nitride semiconductor layer including a dielectric layer on the substrate, forming an active layer on the n-type nitride semiconductor layer, and forming an active layer on the active layer. Forming a p-type nitride semiconductor layer, forming a transparent electrode on the p-type nitride semiconductor layer, and forming an n-type contact region in which an upper surface of the n-type nitride semiconductor layer is partially exposed; And forming an n-type electrode in the n-type contact region, and forming a p-type electrode on the transparent electrode.

Forming an n-type nitride semiconductor layer including the dielectric layer includes forming an undoped GaN (U-GaN) layer on the substrate; Forming a first n-type GaN layer on the U-GaN layer; Forming a dielectric layer on the first n-type GaN layer; And forming a second n-type GaN layer identical to the first n-type GaN layer on the dielectric layer.

Also, forming an n-type nitride semiconductor layer including the dielectric layer may include forming an undoped GaN (U-GaN) layer on the substrate; Forming a first n-type GaN layer on the U-GaN layer; Forming a dielectric layer on the first n-type GaN layer; Patterning the dielectric layer; And forming a second n-type GaN layer identical to the first n-type GaN layer on the first n-type GaN layer including the dielectric layer.

In this case, the forming of the dielectric layer may include forming an oxide layer including at least one or more of Zr, Si, Hf, Sr, Ti, and Ba, which may be formed by at least one layer.

In addition, the dielectric layer may be formed in a pattern like a stripe structure, a circular structure, or a polygonal structure.

The forming of the p-type nitride semiconductor layer may include forming an electron blocking layer formed of a p-type AlGaN layer; And forming a p-type GaN layer on the electron blocking layer.

In the nitride semiconductor light emitting device of the present invention as described above, the dielectric layer is formed separately in the n-type nitride semiconducting body, and the dielectric layer acts as a capacitance to increase the rebound speed of the device when momentary static electricity enters in the opposite direction. This prevents the destruction of the device due to static electricity. At this time, the thickness of the dielectric layer is formed so that the electrons can be tunneled, and does not interfere with the flow of electrons, the present invention can improve the electrostatic breakdown characteristics of ESD level up to 1KV or several KV.

Hereinafter, a nitride semiconductor light emitting device and a method of manufacturing the same according to the present invention will be described in detail with reference to the accompanying drawings.

2 is a cross-sectional view showing a nitride semiconductor light emitting device according to the present invention.

As shown in the figure, the nitride semiconductor light emitting device 100 according to the present invention includes a sapphire substrate 101, a buffer layer 112 and a dielectric layer 120 sequentially formed on the sapphire substrate 101. and an n-type nitride semiconductor layer 113, an active layer 114, and an n-type nitride semiconductor layer 115, wherein the p-type nitride semiconductor layer 115 and the active layer 114 are subjected to a mesa etching process. The partial region is removed to have a structure in which a part of the upper surface of the n-type nitride semiconductor layer 113 is exposed.

An n-type electrode 117 is formed on the exposed n-type nitride semiconductor layer 113.

In addition, a transparent electrode 116 made of indium tin oxide (ITO) or the like is formed on the p-type nitride semiconductor layer 115, and a p-type electrode 118 is formed thereon.

The substrate 101 is a substrate suitable for growing a nitride semiconductor single crystal, and is preferably formed using a transparent material including sapphire. In addition to sapphire, the substrate 100 may be formed of zinc oxide (ZnO), It may be formed of gallium nitride (GaN), silicon carbide (SiC), aluminum nitride (AlN), or the like.

The buffer layer 112 is a layer for improving lattice matching with the substrate 110 including the sapphire before the n-type nitride semiconductor layer 113 is grown on the substrate 110. Nitrides containing GaN or Ga, for example, SiC / InGaN, which may be omitted depending on device characteristics and process conditions.

The n-type nitride semiconductor layer 112 includes a GaN layer 113a doped with n-type conductive impurities such as Si, Ge, Sn, and the like, and an n ⁺ type GaN layer 113b formed on the n-type GaN layer 113a. , 113b '), and the n ⁺ -type GaN layers 113b and 113b' include a dielectric layer 120 therein. In this case, the dielectric layer 120 may be formed of an oxide layer including at least one of Zr, Si, Hf, Sr, Ti, and Ba having a higher dielectric constant than GaN, and the dielectric layer 120 may include at least one layer. Can be. For example, the dielectric layer 120 may be formed of an oxide layer such as ZrO ₂ / SiO ₂ , HfO ₂ / SiO ₂ , SiN ₂ / SiO ₂ / SrO ₂ , TiO ₂ / SiO ₂ , BaTiO _3, or SrTiO _3. have.

In addition, the thickness of the dielectric layer 120 is designed to allow electron tunneling in the dielectric layer so that the operation characteristics of the device are not degraded, and, for example, the thickness of the dielectric layer 120 may be designed to have a thickness of 0.5 nm or more and 20 nm or less.

In addition, the dielectric layer 120 is formed in the n ⁺ type GaN layers 113b and 113b ', and is formed over the entire surface on the first n ⁺ type GaN layer 113b formed under the dielectric layer 120. , the dielectric layer, and 120 may be the first 1 n ⁺ type same claim 2 n ⁺ type and a GaN layer (113b) GaN layer (133b ') on the upper form, the dielectric layer 120 may be formed in pattern form . That is, the dielectric layer 120 may have a stripe structure or may have a pattern such as a polygonal structure or a circular structure.

3 to 5 illustrate various shapes that the dielectric layer 120 may have, and as illustrated in FIG. 3, no regions to be etched are formed, or as illustrated in FIG. 4, the stripe structure is illustrated. The pattern may be formed, or a dielectric layer pattern may be formed in the etching region 120a. In addition, as shown in FIG. 5, a pattern having a circular structure is also possible, and in this case, it may be formed separately in the etching region 120a.

3 to 5 show some examples of various forms in which the dielectric layer may be formed, the present invention may be various polygonal structures, which are not shown in the drawings.

The dielectric layer 120 configured as described above acts as a capacitance to increase the rebound speed of the device when instantaneous static electricity enters the reverse direction, thereby preventing the destruction of the device due to static electricity, as well as current crowding ( By preventing the crowding and increasing the spread of the current, the spread of the current is increased, thereby contributing to further improving the characteristics of the light emitting device.

Referring to FIG. 2, the structure of the nitride semiconductor light emitting device 100 of the present invention will be described continuously. The active layer 114 formed on the n-type nitride semiconductor layer 113 is formed by In _X Al _Y Ga _1-XY N. It may be formed of a multi-quantum well structure consisting of a composition formula (here, 0≤X, 0≤Y, X + Y≤1). For example, an InGaN-based quantum well layer and a GaN-based quantum barrier layer are alternately stacked. It may be formed of a multi-quantum well structure having a structure.

On the other hand, the active layer 114 may be composed of one quantum well layer or a double hetero (double-hetero) structure.

The p-type nitride semiconductor layer 115 is a semiconductor layer doped with p-type conductive impurities such as Mg, Zn, Be, and the like on an electron blocking layer 115a and the electron blocking layer 115a. The formed p-type GaN layer 115b is included.

The electron blocking layer 115a may be formed of a nitride semiconductor including Al, such as p-type AlGaN, and the p-type GaN layer 115b may be formed of a nitride semiconductor that does not contain Al, such as GaN.

Since the electron blocking layer 115a, which is AlGaN, has a larger energy band gap than a nitride semiconductor containing less Al or no Al, electrons provided from the n-type nitride semiconductor layer 113 are recombined in the active layer 114. This can effectively prevent overflow. As such, the p-type nitride semiconductor layer 115 including the electron blocking layer 115a may increase the light efficiency of the light emitting device 100 by reducing electrons consumed due to overflowing.

In the nitride semiconductor light emitting device 100 of the present invention configured as described above, the dielectric layer 120 having a higher dielectric constant than GaN is formed inside the n-type nitride semiconductor layer 113 to have a thickness capable of electron tunneling, thereby preventing static electricity of the light emitting device. Improve the breaking characteristics. That is, the dielectric layer 120 serves as a capacitance in the n-type nitride semiconductor layer, and if a capacitor larger than the n-type nitride semiconductor layer is present under the active layer 114, the peak intensity of static electricity is reduced. The active layer can be protected. In the present invention, the static electricity level can be improved to several KV of 1 KV or more.

Hereinafter, a method of manufacturing the nitride semiconductor light emitting device of the present invention configured as described above will be described with reference to the drawings.

6A through 6F are flowcharts illustrating a method of manufacturing the nitride semiconductor light emitting device according to the present invention.

First, as shown in FIG. 6A, a substrate 210 is prepared, and then a buffer layer 212 is formed on the substrate 210.

As described above, the substrate 210 is a substrate suitable for growing a nitride semiconductor single crystal, and is formed by using a transparent material including sapphire. In addition to sapphire, the substrate 210 includes zinc oxide (ZnO) and zinc oxide (ZnO). ), Gallium nitride (GaN), silicon carbide (SiC), aluminum nitride (AlN), and the like.

The buffer layer 212 may be formed by low temperature growth of an undoped GaN layer or an AlN layer.

Subsequently, an n-type nitride semiconductor layer in which a GaN layer 213a and a first n ⁺ -type GaN layer 213b doped with n-type conductive impurities such as Si, Ge, Sn, and the like are sequentially stacked on the buffer layer 212. After forming 213, a dielectric layer 220 is formed on the first n ⁺ type GaN layer 213b.

The dielectric layer 220 may be formed of an oxide layer including at least one of Zr, Si, Hf, Sr, Ti, and Ba having a higher dielectric constant than GaN, and may be formed to have at least one layer. For example, the dielectric layer 220 may be formed of an oxide layer such as ZrO ₂ / SiO ₂ , HfO ₂ / SiO ₂ , SiN ₂ / SiO ₂ / SrO ₂ , TiO ₂ / SiO ₂ , BaTiO _3, or SrTiO _3. have. In this case, the thickness of the dielectric layer 220 is preferably formed to 20nm or less to enable tunneling of electrons.

Subsequently, when the dielectric layer 220 is formed in a pattern form, as shown in FIGS. 4 to 5, a separate patterning process may be added, and as shown in FIG. 3, the patterning process may be performed without a patterning process. .

As then shown in Figure 6c, the dielectric layer 220 on the first 1 n ⁺ type by the same process conditions and the GaN layer (213b), the 2 n ⁺ type GaN layer (213b ') formed do. After the active layer 214 and the p-type nitride semiconductor layer 215 are formed on the first n ⁺ type GaN layer 213b, a transparent conductive material such as ITO is formed on the p-type nitride semiconductor layer 215. By using the transparent electrode 116 is formed.

In this case, the active layer 114 may be formed of a multi-quantum well structure consisting of In _X Al _Y Ga _1-XY N composition formula (where 0≤X, 0≤Y, X + Y≤1), for example For example, the InGaN-based quantum well layer and the GaN-based quantum barrier layer may be formed of a multi-quantum well structure having a structure in which the layers are alternately stacked.

In addition, the active layer 214 may be formed in a single quantum well layer or a double hetero form.

The p-type nitride semiconductor layer 215 is formed. In this case, the p-type nitride semiconductor layer 215 is a semiconductor layer doped with p-type conductive impurities such as Mg, Zn, and Be, and an electron blocking layer is deposited on the active layer 2174 by depositing a p-type AlGaN layer. And forming a p-type GaN layer 215b formed on the electron blocking layer 215a.

Then, a transparent electrode 216 on which a transparent conductive material such as ITO or IZO is deposited is formed on the p-type GaN layer 215b.

Thereafter, the transparent electrode 216, the p-type nitride semiconductor layer 215, the active layer 214, and the n-type nitride semiconductor layers 213b ′ and 213b are mesa-etched to form the first n ⁺ type. An n-type contact region is formed by exposing a portion of the GaN layer 213b.

Subsequently, an n-type electrode 217 is formed on the n-type contact region, that is, the exposed first n ⁺ type GaN layer 213b, and a p-type electrode 218 is formed on the transparent electrode 216. Thus, the nitride semiconductor light emitting device according to the present invention is produced.

In the present invention, the semiconductor layer may be formed through the MOCVD method, and various other known methods such as the MBE method may be used.

In the nitride semiconductor light emitting device of the present invention manufactured by the method as described above, a large capacitance is formed by inserting a nitride semiconductor, that is, a dielectric layer having a higher dielectric constant than GaN, in the n-type nitride semiconductor layer. Therefore, when such a large capacitor is present under the active layer, when the instantaneous static electricity flows in the reverse direction, the rebound speed of the device becomes long, reducing the peak intensity of the static electricity to protect the active layer, thereby preventing the light emitting device from static electricity. It can be safely protected from.

In addition, the dielectric layer may increase current spreading by preventing current crowding, thereby increasing current spreading to further improve characteristics of a light emitting device.

Although the preferred embodiments of the present invention have been described in detail above, those skilled in the art will understand that various modifications and equivalent other embodiments are possible therefrom. Accordingly, the scope of the present invention is not limited thereto, and various modifications and improvements of those skilled in the art using the basic concept of the present invention as defined in the following claims also fall within the scope of the present invention.

As described above, the nitride semiconductor light emitting device according to the present invention forms a large capacitance by inserting a dielectric having a higher dielectric constant than the nitride semiconductor layer in the n-type nitride semiconductor layer, so that the instantaneous static electricity enters in the opposite direction, and thus the revolving speed of the device It is possible to increase the ESD level up to several KV by increasing the dielectric layer, and the dielectric layer has an effect of further improving the characteristics of the device by increasing the diffusion of current.

Claims (30)

Board; A first conductivity type nitride semiconductor layer formed on the substrate and including a dielectric layer therein; An active layer formed on the first conductivity type nitride semiconductor layer; A second conductivity type nitride semiconductor layer formed on the active layer; A transparent electrode layer formed on the second conductivity type nitride semiconductor layer; And A nitride semiconductor light emitting device comprising first and second electrodes respectively formed on the first and second conductivity type nitride semiconductors. The method of claim 1, The dielectric layer is formed over the entire surface of the first conductive nitride semiconductor layer except for the contact region of the first electrode. The method of claim 1, The dielectric layer is a nitride semiconductor light emitting device, characterized in that formed in the pattern of the stripe structure. The method of claim 1, The dielectric layer is a nitride semiconductor light emitting device, characterized in that formed in a circular pattern. The method of claim 1, The dielectric layer is a nitride semiconductor light emitting device, characterized in that consisting of a pattern of polygonal structure. The method of claim 1, The dielectric layer includes at least one of Zr, Si, Hf, Sr, Ti, and Ba. The method of claim 6, The dielectric layer is at least one layer, nitride semiconductor light emitting device. The method of claim 1, The nitride semiconductor light emitting device of claim 1, wherein the first conductivity type nitride semiconductor layer is n-type. The method of claim 1, The first conductive nitride semiconductor layer is p-type nitride semiconductor light emitting device, characterized in that. The method of claim 1, The first conductive nitride semiconductor layer is a nitride semiconductor light emitting device, characterized in that the doped n-type nitride semiconductor layer and the n ⁺ type nitride semiconductor layer is laminated. The method of claim 1, The nitride semiconductor light emitting device of claim 2, wherein the second conductivity type nitride semiconductor layer includes an electron blocking layer. Board; An n-type nitride semiconductor layer formed on the substrate and including a capacitor therein; An active layer having a multi-quantum well structure formed on the n-type nitride semiconductor layer; A p-type nitride semiconductor layer formed on the active layer; A transparent electrode layer formed on the p-type nitride semiconductor layer; An n-type electrode formed on the n-type nitride semiconductor layer; And A nitride semiconductor light emitting device comprising a p-type electrode formed on the p-type nitride semiconductor layer. The method of claim 12, The capacitor is a nitride semiconductor light emitting device, characterized in that consisting of a dielectric layer. The method of claim 13, The dielectric layer is a nitride semiconductor light emitting device, characterized in that formed in the pattern of the stripe structure. The method of claim 13, The dielectric layer is a nitride semiconductor light emitting device, characterized in that formed in a circular pattern. The method of claim 13, The dielectric layer is a nitride semiconductor light emitting device, characterized in that consisting of a pattern of polygonal structure. The method of claim 13, The dielectric layer includes at least one of Zr, Si, Hf, Sr, Ti, and Ba. The method of claim 17, The dielectric layer is at least one layer, nitride semiconductor light emitting device. The method of claim 13, The n-type nitride semiconductor layer includes an n-type GaN layer and an n ⁺ -type GaN layer. The method of claim 13, The p-type nitride semiconductor layer comprises an electron blocking layer (Electron Blocking Layer). The method of claim 20, The electron blocking layer (Electron Blocking Layer) is a nitride semiconductor light emitting device, characterized in that consisting of an AlGaN layer. Preparing a substrate; Forming an n-type nitride semiconductor layer including a dielectric layer on the substrate; Forming an active layer on the n-type nitride semiconductor layer; Forming a p-type nitride semiconductor layer on the active layer; Forming a transparent electrode on the p-type nitride semiconductor layer; Forming an n-type contact region in which an upper surface of the n-type nitride semiconductor layer is partially exposed; Forming an n-type electrode in the n-type contact region; And Forming a p-type electrode on the transparent electrode; Method of manufacturing a nitride semiconductor light emitting device comprising a. The method of claim 22, Forming an n-type nitride semiconductor layer including the dielectric layer, Forming an undoped GaN (U-GaN) layer on the substrate; Forming a first n-type GaN layer on the U-GaN layer; Forming a dielectric layer on the first n-type GaN layer; And Forming a second n-type GaN layer identical to the first n-type GaN layer on the dielectric layer; Method for manufacturing a semiconductor light emitting device comprising a. The method of claim 22, Forming an n-type nitride semiconductor layer including the dielectric layer, Forming an undoped GaN (U-GaN) layer on the substrate; Forming a first n-type GaN layer on the U-GaN layer; Forming a dielectric layer on the first n-type GaN layer; Patterning the dielectric layer; And Forming a second n-type GaN layer identical to the first n-type GaN layer on the first n-type GaN layer including the dielectric layer; Method for manufacturing a semiconductor light emitting device comprising a. The method of claim 23 or 24, Forming the dielectric layer, A nitride semiconductor light emitting device comprising the step of forming an oxide layer comprising at least one of Zr, Si, Hf, Sr, Ti, Ba. The method of claim 25, The oxide layer is formed of at least one layer, nitride semiconductor light emitting device. The method of claim 24, The dielectric layer is formed in a pattern of a stripe structure, nitride semiconductor light emitting device. The method of claim 24, The dielectric layer is nitride semiconductor light emitting device, characterized in that formed in the pattern form of a circular structure. The method of claim 24, The dielectric layer is a nitride semiconductor light emitting device, characterized in that formed in the pattern form of a polygonal structure. The method of claim 22, Forming the p-type nitride semiconductor layer, forming an electron blocking layer made of a p-type AlGaN layer; And Forming a p-type GaN layer on the electron blocking layer; Nitride semiconductor light emitting device comprising a.

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