KR20080075727A - Immersion lithographic apparatus and immersion lithographic method - Google Patents

Immersion lithographic apparatus and immersion lithographic method Download PDF

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Publication number
KR20080075727A
KR20080075727A KR1020070015022A KR20070015022A KR20080075727A KR 20080075727 A KR20080075727 A KR 20080075727A KR 1020070015022 A KR1020070015022 A KR 1020070015022A KR 20070015022 A KR20070015022 A KR 20070015022A KR 20080075727 A KR20080075727 A KR 20080075727A
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KR
South Korea
Prior art keywords
liquid
substrate
gas
boundary
injection passage
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KR1020070015022A
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Korean (ko)
Inventor
박지호
이헌정
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삼성전자주식회사
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Priority to KR1020070015022A priority Critical patent/KR20080075727A/en
Publication of KR20080075727A publication Critical patent/KR20080075727A/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like

Abstract

The liquid immersion exposure apparatus includes a liquid supply unit for supplying liquid between the projection optical system and the substrate placed on the substrate stage. The liquid supply unit includes a housing providing a storage space and a first injection passage for injecting gas into the upper surface of the substrate, and the gas injected from the first injection passage collides with the liquid to form a boundary of the liquid. The liquid supply unit further includes a second injection passage for injecting gas toward the upper surface of the substrate, wherein the first injection passage is inclined toward the boundary and the second injection passage is inclined in a direction away from the boundary. The housing includes a boundary defining the storage space in which the liquid is filled, and a leakage preventing portion located outside the boundary, wherein the bottom surface of the leakage preventing portion is closer to the substrate stage than the bottom surface of the boundary portion.

Description

Liquid immersion exposure apparatus and liquid immersion exposure method {IMMERSION LITHOGRAPHIC APPARATUS AND IMMERSION LITHOGRAPHIC METHOD}

1 is a view schematically showing a liquid immersion exposure apparatus according to the present invention.

2 is a view schematically showing a liquid supply unit according to the present invention.

3 is a view showing the flow of gas in the housing of FIG.

<Description of Symbols for Main Parts of Drawings>

1: exposure apparatus 10: light source

20: illumination optical system 30: reticle stage

40: projection optical system 50: liquid supply unit

60 wafer stage 100 housing

122: gas supply line 124: gas recovery line

142: first injection passage 144: second injection passage

160: gas recovery flow path 180: liquid recovery flow path

Most integrated circuits are manufactured through optical lithography processes.

A light sensitive photoresist is applied on the wafer to form a thin layer, and then the photoresist is selectively exposed to light passing through the reticle. The reticle contains pattern information for the particular layer to be processed. Next, when the photosensitive agent is developed, the pattern included in the reticle is transferred onto the wafer. The photosensitizer can be used as a mask to etch the underlying films or as a mask for the ion implantation doping step.

Today, such optical lithography is accomplished using projection exposure apparatus. Light passes from the high-intensity light source through the first lens system (lighting optical system) to the reticle and passes through the reticle. The reticle transmits light, and the transmitted light is collected by the second lens system (projection optical system) and focused on the wafer. Examples of such a projection exposure apparatus are disclosed in detail in US Pat. No. 6,538,719 (issued to Takahashi et al.) Of Nikon Corporation and Korea Patent Publication No. 10-0571371 of SML Corporation. have.

In such an exposure apparatus, it is very important to finely print the patterns on the reticle on the wafer. Therefore, recently, immersion lithography has been used in which a fluid having a relatively high refractive index (for example, pure water) is filled between the wafer and the second lens system positioned on the top of the wafer. Immersion exposure can yield improved resolution and improved depth of focus (DOF).

A housing is provided between the second lens system and the wafer, the housing providing a storage space. Fluid having a high refractive index is filled in the storage space, and light passing through the second lens system is provided to the wafer through the fluid filled in the storage space. In this case, the bottom surface of the housing is spaced apart from the top surface of the wafer, and the fluid may leak to the outside through the spaced space. Therefore, it is necessary to limit the fluid to a certain area to prevent the fluid from leaking to the outside.

One method for limiting a fluid to a certain area is to spray gas toward the fluid. Injecting a gas towards the fluid prevents the injected gas from colliding with the boundary of the fluid and expanding the boundary. Therefore, it is possible to prevent the fluid from leaking to the outside. However, the injected gas produces bubbles in the fluid, and the bubbles distort the light having information about the patterns on the reticle, thus generating a large number of pattern defects during patterning.

The present invention has been made to solve the above problems, and an object of the present invention is to provide a liquid immersion exposure apparatus and a liquid immersion exposure method that can suppress the generation of bubbles.

Another object of the present invention is to provide a liquid immersion exposure apparatus and a liquid immersion exposure method capable of preventing the light emitted from the projection optical system from being distorted.

Still another object of the present invention is to provide a liquid immersion exposure apparatus and a liquid immersion exposure method capable of finely printing patterns on a reticle on a substrate.

Still other objects of the present invention will become more apparent from the following detailed description and the accompanying drawings.

According to the present invention, the liquid immersion exposure apparatus includes a substrate stage on which a substrate is placed, a projection optical system for irradiating light toward the substrate placed on the substrate stage, and the light transmitted through a storage space formed between the substrate stage and the projection optical system. And a liquid supply unit supplying a liquid to the liquid supply unit, wherein the liquid supply unit includes a housing for providing the storage space and a first injection passage for injecting gas into an upper surface of the substrate to form a boundary of the liquid. The first injection passage may be inclined toward the boundary.

At this time, the liquid supply unit further includes a second injection passage for injecting gas toward the upper surface of the substrate, the second injection passage may be inclined in a direction away from the boundary.

The second injection passage may be branched from the first injection passage. In addition, the first and second injection passages may be formed in the housing.

The housing may include a boundary defining the storage space in which the liquid is filled, and a leakage preventing portion located outside the boundary, and a bottom surface of the leakage preventing portion may be closer to the substrate stage than a bottom surface of the boundary portion.

The first injection passage may be formed in the housing, and the first injection passage may inject the gas into a space formed between an upper surface of the substrate and a bottom surface of the boundary portion.

The liquid supply unit further includes a second injection passage for injecting gas into a space formed between an upper surface of the substrate and a bottom surface of the leakage preventing portion, wherein the second injection passage is formed inside the housing. It may be inclined in a direction away from the boundary.

The second injection passage may be branched from the first injection passage.

The liquid supply unit may further include a gas recovery line for recovering the gas injected from the first injection passage.

The liquid supply unit further includes a liquid supply line for supplying the liquid to the storage space, a liquid recovery line for recovering the liquid in the storage space, wherein the liquid recovery line is formed inside the housing, and the liquid recovery line The lower end of the line may be closer to the storage space than the lower end of the gas recovery line.

According to the present invention, a liquid immersion exposure method for performing an exposure process by supplying a liquid between an upper surface of a substrate placed on a substrate stage and a projection optical system that irradiates light toward the substrate includes a storage space of the liquid on an upper portion of the substrate. Provides a housing for providing a boundary of the liquid by injecting a gas to the upper surface of the substrate, the gas is injected in a direction inclined toward the boundary.

The gas may have a lower solubility than nitrogen. In this case, the gas may be any one of helium, neon, and freon.

The method may further comprise injecting a gas to the upper surface of the substrate to prevent foreign matter from entering the liquid.

Hereinafter, preferred embodiments of the present invention will be described in more detail with reference to FIGS. 1 to 3. Embodiment of the present invention may be modified in various forms, the scope of the present invention should not be construed as limited to the embodiments described below. This embodiment is provided to explain in detail the present invention to those skilled in the art. Accordingly, the shape of each element shown in the drawings may be exaggerated to emphasize a more clear description.

On the other hand, the exposure apparatus 1, although the function of the component is generally the same according to the manufacturer, there are some differences in the front and rear of the component and the operation principle of the component according to the light path. Therefore, hereinafter, the exposure apparatus 1 will be described focusing on the function of the components, and the front and rear of the components described below may be interchanged.

The exposure apparatus 1 described below is described in U.S. Patent Nos. 6,331,885 (issued to Nishi) and 6,538,719 (issued to Takahashi et al.) By Nikon Corporation, It is disclosed in detail in Korean Patent Publication No. 10-0571371, the function of the components constituting the exposure apparatus 1 is already well known to those skilled in the art, detailed description of the components will be omitted.

In addition, although the wafer W is demonstrated as an example of a board | substrate below, this invention is not limited to this.

1 is a view schematically showing an exposure apparatus 1 according to the present invention.

Wafer W is seated on wafer stage 60. A photoresist film (not shown) is formed on the wafer W, and the photoresist film is formed into a photoresist pattern through an exposure process and a developing process. The photoresist film is formed on the wafer W through a photoresist composition coating process and a soft bake process, and the photoresist pattern formed through this process is used as a mask for etching the underlying films or a mask for an ion implantation doping step. Can be used as

A plurality of shot regions are set on the wafer W, and each shot region includes at least one die region. The size of the die region may vary according to the type of semiconductor device desired, and the size of each shot region and the number of shot regions may be determined according to the size of the die region.

The exposure apparatus 1 includes a light source 10, an illumination optical system 20, a reticle stage 30, a projection optical system 40, a liquid supply unit 50, And a wafer stage 60.

The light source 10 generates light for exposure. The light source 10 preferably includes a mercury lamp, an argon fluoride (ArF) laser generator, a krypton fluoride (KrF) laser generator, an extreme ultraviolet beam or an electron beam generator. . The light source 10 is connected to the illumination optical system 20.

The illumination optical system 20 transmits the light generated from the light source 10 onto the reticle R. In this case, the illumination optical system 20 converts the light formed in the form of point light generated from the light source 10 into surface light and connects it to the reticle R at a predetermined size.

The illumination optical system 20 includes a light intensity distribution control member 22, a light intensity control member 24, a blind member 26, and a condenser lens. 28) and the like.

The light distribution adjusting member 22 improves the uniformity of light generated from the light source 10. The light size adjusting member 24 adjusts the coherence factor (σ). The blind member 26 blocks a portion of the light to define an illuminated area on the reticle R. Accordingly, the exposure area is prevented by limiting the illumination area by using the blind member 26 during exposure.

Light generated from the light source 10 is processed to have a state suitable for forming a photoresist pattern on the wafer W while passing through the illumination optical system 20. Here, the suitable state refers to the amount of light, intensity, density, etc. corresponding to the characteristics of the intended photoresist pattern, and those skilled in the art will appreciate the aspect ratio, etching selectivity, etc. of the microstructure to be formed on the wafer W. It will therefore be easy to select the conditions under which the light can have a suitable state.

Light passing through the illumination optical system 20 is illuminated by a reticle R disposed on the reticle stage 30. On the reticle R, a plurality of circuit patterns for projecting onto the shot region of the wafer W are formed. The light irradiated on the reticle R passes through the reticle R, and image information of the circuit pattern is reflected. In this case, the reticle R may be moved in a predetermined direction by the reticle stage 30.

Light passing through the reticle R is irradiated to the projection optical system 40. The projection optical system 40 performs the exposure process toward the wafer W, in which the image information of the circuit pattern is reflected. The projection optical system 40 has a cylindrical shape as a whole, the upper end is disposed to face the reticle R, and the lower end is disposed to face the wafer W.

2 is a view schematically showing a liquid supply unit 50 according to the present invention, Figure 3 is a view showing the flow of gas in the housing 100 of FIG.

The liquid supply unit 50 is provided on the optical path between the lower end of the projection optical system 40 and the upper surface of the wafer W. The liquid supply unit 50 includes a housing 100, a liquid supply line 52, and a liquid recovery line 54, and a liquid between the projection optical system 40 and the wafer W for immersion lithography. To provide.

The housing 100 provides a storage space between the projection optical system 40 and the wafer W, and the liquid is filled in the storage space. The housing 100 has a donut shape with an empty center, and the empty middle part becomes a storage space filled with a liquid. The storage space is located on the path of the light irradiated from the projection optical system 40, and the light irradiated from the projection optical system 40 is irradiated to the upper surface of the wafer W through the liquid filled in the storage space. As described above, an improved resolution and an improved depth of focus (DOF) may be obtained by the liquid.

The liquid is supplied to the storage space of the housing 100 through the liquid supply line 52, and a valve 52a for opening and closing the liquid supply line 52 is installed on the liquid supply line 52. The liquid tank 53 is connected to one end of the liquid supply line 52, and the liquid filled in the storage space is stored in the liquid tank 53. The liquid filled in the storage space may be a liquid (eg pure water or oil) having a refractive index higher than that of air. That is, the liquid filled in the storage space serves as a kind of liquid lens. The liquid in the storage space is drained to the outside through the liquid recovery line 54 connected to the liquid recovery passage 180 to be described later.

Meanwhile, the liquid may be provided in the housing 100 through various methods. During exposure, the liquid is continuously supplied into the storage space of the housing 100 and continuously drained from the housing 100, so that new liquid can be provided in the storage space of the housing 100. In addition, after filling the liquid in the housing 100 and performing immersion exposure for a predetermined number of times, a method of draining the liquid in the housing 100 and filling a new liquid can also be considered.

Hereinafter, a detailed structure of the housing 100 will be described. As shown in FIG. 2, since the housing 100 has a symmetrical structure, only one side of the housing 100 will be described, and a description of the other side of the housing 100 will be omitted.

As shown in FIG. 3, the housing 100 includes a boundary portion a and a leakage preventing portion b. The boundary portion (a) is arranged around the outer periphery of the storage space, and the storage space is defined by the boundary portion (a). The leakage preventing part b is disposed around the outer edge of the boundary part a. Detailed description of the leak prevention part (b) will be described later.

The gas injection passages 142 and 144, the gas recovery passage 160, and the liquid recovery passage 180 are formed in the housing 100. The liquid recovery passage 180 is disposed to be adjacent to the storage space and extends in the vertical direction of the housing 100. The liquid supplied to the storage space through the liquid supply line 52 is drained to the liquid recovery line 54 through the liquid recovery passage 180.

On the other hand, the bottom surface of the housing 100 is spaced apart from the upper surface of the wafer (W) by a predetermined distance. Therefore, the liquid in the storage space may leak out of the housing 100 through the space between the bottom surface of the housing 100 and the top surface of the wafer W. The gas injection passages 142 and 144 prevent such leakage.

The gas injection passages 142 and 144 include a first injection passage 142 and a second injection passage 144. The first injection passage 142 is formed outside the liquid recovery passage 180 and extends in the vertical direction of the housing 100. One end of the first injection passage 142 is open toward the wafer W, and injects gas through one end of the first injection passage 142. The injected gas collides with the leaking liquid through the space between the bottom surface of the boundary portion a and the top surface of the wafer W. The leaked liquid is no longer leaked by the pressure of the injected gas and forms a boundary (B) at the lower end of the liquid recovery channel 180, and the liquid recovery line 54 through the liquid recovery channel 180. To drain.

The first injection passage 142 is disposed outside the liquid recovery passage 180 and is formed to be inclined toward the boundary B. Therefore, the gas injected through the lower end of the first injection passage 142 can provide a greater pressure to the liquid leaking, it is possible to more effectively prevent the leakage of the liquid.

One end of the first injection passage 142 is connected to the gas supply line 122, the gas supply line 122 is connected to the gas storage tank 123. In the gas storage tank 123 is injected gas is stored to prevent the leakage of the liquid. The gas stored in the gas storage tank 123 is preferably low solubility.

Solubility means the amount of solute that can be dissolved in a certain amount of solvent under certain conditions, and the solubility varies depending on the temperature or pressure conditions. Therefore, gas with high solubility is more easily dissolved in the liquid than gas with low solubility, and the gas with higher solubility has a larger amount of gas dissolved in the liquid, thereby forming a large amount of bubbles when the solubility is lowered. . Bubbles float in the liquid or adhere to the surface of the projection optical system 40, and affect the aberration of the light during immersion exposure, causing pattern failure. Therefore, it is necessary to suppress the generation of bubbles, and for the reasons described above, in the case of a gas having a lower solubility than a gas having a high solubility, bubbles are less likely to occur. Table 1 shows the solubility of the main gases measured at 25 ° C.

Table 1. Solubility of main gases (25 ° C)

Gas composition Solubility (mg / L) Oxygen (O 2 ) 40.9 Nitrogen (N 2 ) 18.3 Argon (Ar) 56.3 Helium (He) 1.6

As shown in Table 1, oxygen (O 2 ), nitrogen (N 2 ) and argon (Ar) have high solubility, while helium (He) has a significantly low solubility. Therefore, it is preferable to inject helium gas through the first injection passage 142. As seen previously, helium gas has a low solubility, so it is very unlikely that bubbles will form in the liquid. Such low solubility gases include Ne and Freon, and such gases may be used. The gas to be injected is stored in the gas storage tank 123 through the lower end of the first injection passage 142.

The second injection passage 144 branches from the first injection passage 142 and is formed outside the first injection passage 142. The second injection passage 144 extends in the vertical direction of the housing 100, and one end of the second injection passage 144 is opened through the bottom surface of the leakage preventing part b so as to be disposed on the upper surface of the wafer W. FIG. Inject gas. Since the second injection passage 144 branches from the first injection passage 142, the gas injected through the second injection passage 144 is the same as the gas injected through the first injection passage 142. Gas injected through the second injection passage 144 is discharged to the outside of the housing 100 through a space between the bottom surface of the leakage preventing portion (b) and the top surface of the wafer (W). The discharge of the gas injected through the second injection passage 144 prevents foreign substances from flowing into the space between the housing 100 and the wafer W from the outside of the housing.

The second injection passage 144 is disposed outside the first injection passage 142 and is inclined in a direction away from the boundary B. Therefore, since the gas injected through the lower end of the second injection passage 144 is discharged at a higher pressure, it is possible to more effectively prevent the inflow of foreign substances.

The gas recovery passage 160 is formed inside the first injection passage 142 and extends in the vertical direction of the housing 100. The upper end of the gas recovery passage 160 is connected to the gas recovery line 124, the lower end of the gas recovery passage 160 is opened through the bottom surface of the boundary (a). The gas injected through the first injection passage 142 is recovered through the lower end of the gas recovery passage 160.

On the other hand, the lower portion of the gas recovery passage 160 is formed to be inclined in a direction away from the boundary (B). Therefore, when the gas is recovered through the lower portion of the gas recovery passage 160, it is possible to prevent the liquid from being recovered together with the gas.

The liquid recovery passage 180 is formed inside the gas recovery passage 160 and extends in the vertical direction of the housing 100. The upper end of the liquid recovery passage 180 is connected to the liquid recovery line 54, and the lower end of the liquid recovery passage 180 is opened through the bottom surface of the boundary (a). The liquid filled in the storage space is recovered through the lower end of the liquid recovery passage 180.

As described above, the housing 100 includes a boundary portion (a) and a leak prevention portion (b). At this time, since the height h b of the leakage preventing portion b is lower than the height h a of the boundary portion a, the bottom surface of the leakage preventing portion b is smaller than the bottom surface of the boundary portion a. It is close to the upper surface of. Therefore, the space between the bottom surface of the leakage preventing portion b and the top surface of the wafer W is smaller than the space between the bottom surface of the boundary portion a and the top surface of the wafer W. Therefore, the gas injected through the first injection line 142 does not flow into the space between the bottom surface of the leakage preventing portion b and the top surface of the wafer W, and the bottom surface of the boundary portion a and the wafer ( Flows into the space between the upper surfaces of W). That is, since the space between the bottom surface of the leakage preventing portion b and the top surface of the wafer W is smaller than the space between the bottom surface of the boundary portion a and the top surface of the wafer W, the first injection line ( The gas injected through the 142 is prevented from leaking to the outside of the housing 100 and is supplied toward the boundary B through the space between the bottom surface of the boundary portion a and the top surface of the wafer W. Be sure to

Although the present invention has been described in detail with reference to preferred embodiments, other forms of embodiments are possible. Therefore, the spirit and scope of the claims set forth below are not limited to the preferred embodiments.

According to the present invention, it is possible to effectively prevent the liquid from leaking outside the housing. In addition, it is possible to prevent foreign substances from entering the housing.

According to the present invention, bubbles can be suppressed from occurring in the liquid provided for immersion exposure. In addition, it is possible to prevent the light emitted from the projection optical system from being distorted.

Claims (17)

A substrate stage on which the substrate is placed; A projection optical system for irradiating light toward the substrate placed on the substrate stage; And It includes a liquid supply unit for supplying a liquid through which the light is transmitted to the storage space formed between the substrate stage and the projection optical system, The liquid supply unit, A housing providing the storage space; A first injection passage configured to inject a gas onto an upper surface of the substrate to form a boundary of the liquid; And the first injection passage is inclined toward the boundary. The method of claim 1, The liquid supply unit further includes a second injection passage for injecting gas toward the upper surface of the substrate, And the second injection passage is inclined in a direction away from the boundary. The method of claim 2, And the second injection passage diverges from the first injection passage. The method of claim 2, And the first and second injection passages are formed inside the housing. The method of claim 1, The housing, A boundary defining the storage space in which the liquid is filled; And Including a leakage preventing portion located on the outside of the boundary, And a bottom surface of the leakage preventing portion is closer to the substrate stage than a bottom surface of the boundary portion. The method of claim 5, The first injection passage is formed in the housing, And the first spray passage injects the gas into a space formed between an upper surface of the substrate and a bottom surface of the boundary portion. The method according to claim 5 or 6, The liquid supply unit further includes a second injection passage for injecting gas into the space formed between the upper surface of the substrate and the bottom surface of the leakage preventing portion, And the second injection passage is formed inside the housing and is inclined in a direction away from the boundary. The method of claim 7, wherein And the second injection passage diverges from the first injection passage. The method of claim 1, The liquid supply unit further comprises a gas recovery line for recovering the gas injected from the first injection passage. The method of claim 9, The liquid supply unit, A liquid supply line for supplying the liquid to the storage space; And Further comprising a liquid recovery line for recovering the liquid of the storage space, And the liquid recovery line is formed inside the housing. A substrate stage on which the substrate is placed; A projection optical system for irradiating light toward the substrate placed on the substrate stage; And It includes a liquid supply unit for supplying a liquid through which the light is transmitted to the storage space formed between the substrate stage and the projection optical system, The liquid supply unit, A housing providing the storage space; A first injection passage that injects gas onto an upper surface of the substrate to form a boundary of the liquid; A storage tank connected to the first injection passage and storing the gas; The substrate is a substrate processing apparatus, characterized in that helium (He). In the liquid immersion exposure method of performing an exposure process by supplying a liquid between the upper surface of the substrate placed on the substrate stage and the projection optical system for irradiating light toward the substrate, A housing providing a storage space of the liquid on the substrate, and defining a boundary of the liquid by injecting a gas to an upper surface of the substrate, wherein the gas is injected in an inclined direction toward the boundary. A liquid immersion exposure method characterized by the above-mentioned. The method of claim 12, The solubility of the gas in the liquid is lower than the solubility of nitrogen in the liquid. The method of claim 12, The gas is immersion exposure method, characterized in that any one of helium, neon, Freon. The method of claim 12, And the method injects a gas onto the upper surface of the substrate to prevent foreign substances from entering the liquid. In the liquid immersion exposure method of performing an exposure process by supplying a liquid between the upper surface of the substrate placed on the substrate stage and the projection optical system for irradiating light toward the substrate, A housing providing a storage space of the liquid on top of the substrate, defining a boundary of the liquid by injecting a gas onto the upper surface of the substrate, wherein the solubility of the gas in the liquid is nitrogen to the liquid A liquid immersion exposure method, characterized by lower than the solubility of. In the liquid immersion exposure method of performing an exposure process by supplying a liquid between the upper surface of the substrate placed on the substrate stage and the projection optical system for irradiating light toward the substrate, Providing a housing for providing a storage space of the liquid on the substrate, and defining a boundary of the liquid by injecting a gas into the upper surface of the substrate, The gas is immersion exposure method, characterized in that any one of helium, neon, Freon.
KR1020070015022A 2007-02-13 2007-02-13 Immersion lithographic apparatus and immersion lithographic method KR20080075727A (en)

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Cited By (5)

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US8836912B2 (en) 2010-10-18 2014-09-16 Asml Netherlands B.V. Fluid handling structure, a lithographic apparatus and a device manufacturing method
US9229334B2 (en) 2009-12-09 2016-01-05 Asml Netherlands B.V. Lithographic apparatus and a device manufacturing method
US9575406B2 (en) 2011-12-20 2017-02-21 Asml Netherlands B.V. Pump system, a carbon dioxide supply system, an extraction system, a lithographic apparatus and a device manufacturing method
US10551748B2 (en) 2014-12-19 2020-02-04 Asml Netherlands B.V. Fluid handling structure, a lithographic apparatus and a device manufacturing method
US11372336B2 (en) 2016-12-14 2022-06-28 Asml Netherlands B.V. Lithography apparatus and device manufacturing method

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9229334B2 (en) 2009-12-09 2016-01-05 Asml Netherlands B.V. Lithographic apparatus and a device manufacturing method
US9746782B2 (en) 2009-12-09 2017-08-29 Asml Netherlands B.V. Lithographic apparatus and a device manufacturing method
US8836912B2 (en) 2010-10-18 2014-09-16 Asml Netherlands B.V. Fluid handling structure, a lithographic apparatus and a device manufacturing method
US9291914B2 (en) 2010-10-18 2016-03-22 Asml Netherlands B.V. Fluid handling structure, a lithographic apparatus and a device manufacturing method
US9575406B2 (en) 2011-12-20 2017-02-21 Asml Netherlands B.V. Pump system, a carbon dioxide supply system, an extraction system, a lithographic apparatus and a device manufacturing method
US10551748B2 (en) 2014-12-19 2020-02-04 Asml Netherlands B.V. Fluid handling structure, a lithographic apparatus and a device manufacturing method
US10859919B2 (en) 2014-12-19 2020-12-08 Asml Netherlands B.V. Fluid handling structure, a lithographic apparatus and a device manufacturing method
US11372336B2 (en) 2016-12-14 2022-06-28 Asml Netherlands B.V. Lithography apparatus and device manufacturing method
US11774857B2 (en) 2016-12-14 2023-10-03 Asml Netherlands B.V. Lithography apparatus and device manufacturing method

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