KR20080061694A - Fabrication method of light emitting device having scattering center laminated with a plurality of insulator layer and light emitting device thereby - Google Patents

Abstract

A method of manufacturing a light emitting device having a scattering center laminated with a plurality of insulation layers and the light emitting device thereof are provided to decrease light transmittance and improve reflectance at the scattering center by forming the scattering center configuring a DBR(Distributed Bragg Reflector). A first conductive type semiconductor layer(221) is formed on a substrate. A plurality of scattering centers are formed by laminating more than two insulation layers with different refraction rates alternately on the first conductive type semiconductor layer. The first conductive type semiconductor layers are laminated alternately on the scattering center over two times. An active layer(240) and a second conductive type semiconductor layer(223) are formed on the first conductive type semiconductor layer.

Description

TECHNICAL FIELD A light emitting device manufacturing method including a scattering center having a plurality of insulating layers stacked thereon, and a light emitting device therefor {FABRICATION METHOD OF LIGHT EMITTING DEVICE HAVING SCATTERING CENT

1 is a cross-sectional view schematically showing a light emitting diode according to an embodiment of the present invention.

2 to 6 are cross-sectional views illustrating a process of manufacturing the light emitting diode shown in FIG. 1.

7 to 9 show a modification according to another embodiment of the present invention.

<Description of the symbols for the main parts of the drawings>

100: substrate 210: buffer layer

220: N-type semiconductor layer 221: first N-type semiconductor layer

222, 224, and 226: scattering center 223: second N-type semiconductor layer

225: third N-type semiconductor layer 227: fourth N-type semiconductor layer

240: active layer 260: P-type semiconductor layer

320: transparent electrode layer 330, 340: electrode pad

The present invention relates to a light emitting device manufacturing method including a scattering center in which a plurality of insulating layers are stacked, and a light emitting device.

A light emitting diode, which is a typical light emitting device, is a photoelectric conversion semiconductor device having a structure in which an N-type semiconductor and a P-type semiconductor are bonded to each other, and are configured to emit light by recombination of electrons and holes. As such a light emitting diode, a GaN-based light emitting diode is known. GaN-based light emitting diodes are manufactured by sequentially stacking GaN-based N-type semiconductor layers, active layers (or light-emitting layers), and P-type semiconductor layers on a substrate made of a material such as sapphire or SiC.

In light emitting diodes, when light is generated, a large amount of light is lost from the inside instead of being emitted outward. Therefore, in order to increase the light efficiency of the light emitting diode, it is necessary to allow the light generated by the light emitting diode to be emitted to the outside without being lost inside the semiconductor.

SUMMARY OF THE INVENTION The present invention has been made by this necessity, and the technical problem to be achieved by the present invention is to stack a plurality of insulating layers in a semiconductor layer so that light generated in the light emitting diodes can be emitted to the outside by internal reflection without being lost inside. It is to increase the amount of light is emitted to the outside by scattering the light through the light reflection at the scattering center having a multi-layer scattering center made of.

According to an aspect of the present invention for achieving the above technical problem, in the method for manufacturing a light emitting device formed by forming a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer therebetween on a substrate, Growing a first conductive semiconductor layer, a plurality of scattering centers formed by alternately stacking two or more insulating layers having different refractive indices on the first conductive semiconductor layer, and growing the second scattering centers again on the scattering centers It provides a light emitting device manufacturing method comprising the step of alternately forming the first conductive semiconductor layer at least twice or more, and forming an active layer and a second conductive semiconductor layer on the first conductive semiconductor layer.

Preferably, the alternating forming step may include alternately stacking two or more insulating layers having different refractive indices on the first grown first conductive semiconductor layer, and placing the stacked insulating layers under the insulating layer. Patterning etching to expose a portion of the first conductivity type semiconductor layer to form a scattering center, and growing the first conductivity type semiconductor layer again on the scattering center, wherein the stacking step and scattering center are formed. The growth step can be repeated by repeating the step.

Preferably, the laminating step, the SiO ₂ layer and Si ₃ N ₄ layer can be laminated alternately.

Preferably, the stacking step may be stacked in a plurality of layers by repeatedly alternating two or more different insulating layers.

Preferably, in the forming of the scattering center, the position of the patterning etching may be modified for each layer so that the scattering centers are formed to be staggered with each other.

Preferably, the forming of the scattering center may modify the patterning etching size of each layer so that the scattering centers have the same size in the same layer and different layers.

Preferably, in the forming of the scattering center, the stacked insulating layers may be etched using a mask pattern in a mesh form using photolithography.

Preferably, the substrate may be a substrate on which a concave-convex pattern is formed.

According to another aspect of the present invention, there is provided a light emitting device in which a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer therebetween are formed on a substrate, wherein the substrate and the first conductive semiconductor layer are formed on the substrate. At least two insulating layers having a refractive index different from each other of the first to nth layers, an active layer and a second conductivity type semiconductor layer formed on the nth layer, and having different refractive indices therebetween. Provided is a light emitting element in which a plurality of scattering centers formed by being alternately stacked are formed.

Preferably, the plurality of scattering centers may be a laminate of alternating SiO ₂ layers and Si ₃ N ₄ layers.

Preferably, the plurality of scattering centers may be stacked in a plurality of layers by repeatedly alternating two or more different insulating layers.

Preferably, the plurality of scattering centers may be formed such that the positions of the scattering centers positioned in each layer are alternate with each other.

Preferably, the plurality of scattering centers may be formed in the same layer in the same size of the scattering centers, and formed in different sizes for each layer.

Preferably, the substrate may be a substrate on which a concave-convex pattern is formed.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are provided by way of example so that the spirit of the invention to those skilled in the art can fully convey. Accordingly, the present invention is not limited to the embodiments described below and may be embodied in other forms. And, in the drawings, the width, length, thickness, etc. of the components may be exaggerated for convenience. Like numbers refer to like elements throughout.

1 is a cross-sectional view illustrating a light emitting diode according to an embodiment of the present invention.

Referring to FIG. 1, a light emitting diode 1 according to an embodiment of the present invention includes a substrate 100 as a base, and an N-type semiconductor layer 220, an active layer 240, and a P on the substrate 100. The light emitting cell 200 including the type semiconductor layer 260 is formed.

Although the light emitting diode 1 of the present embodiment includes one light emitting cell but also includes a plurality of light emitting cells, the light emitting diode which can be operated by an AC power supply is also within the scope of the present invention. Meanwhile, a portion of the N-type semiconductor layer 220 is exposed upward by the formation of mesas, and an N-type electrode pad 330 is formed at the exposed portion of the light emitting cell. The substrate 100 is preferably made of sapphire material, but may be made of another material such as SiC having a higher thermal conductivity than the sapphire material.

As shown, the active layer 240 is limitedly formed on a portion of the N-type semiconductor layer 220 by mesa formation, and the P-type semiconductor layer 260 is formed on the active layer 240. Therefore, a portion of the upper surface of the N-type semiconductor layer 220 is bonded to the active layer 240, and the remaining portion of the upper surface is exposed to the outside. In the present embodiment, a portion of the N-type semiconductor layer 220 is formed to be partially removed to form the N-type electrode pad, but the vertical light emitting diode from which the substrate under the N-type semiconductor layer 220 is removed is also present invention. Is in the range of.

N-type semiconductor layer 220 may include an N-type cladding layer _{Al x In y Ga 1 -x- y} N may have a (0≤x, y, x + y≤1 ), N -type. In addition, the P-type semiconductor layer 260 may be formed of P-type Al _x In _y Ga _{1- xy} N (0 ≦ x, y, x + y ≦ 1), and may include a P-type cladding layer. The N-type semiconductor layer 220 is formed by adding silicon (Si) as a dopant. The P-type semiconductor layer 260 may be formed by adding dopants such as zinc (Zn) or magnesium (Mg).

In particular, the N-type semiconductor layer 220 includes a scattering center 224 formed in multiple layers. Although it is formed of three layers here, it is not limited to this. The scattering centers 222, 224, and 226 of each layer are formed of a plurality of layers in which two or more insulating layers having different refractive indices are alternately stacked. The scattering centers 222, 224, and 226 can maximize the scattering effect of light inside the N-type semiconductor layer 220. The configuration of the N-type semiconductor layer 220 will be described in more detail below.

In addition, a transparent electrode layer 320 formed of a metal or metal oxide such as Ni / Au, ITO, or ZnO is formed on an upper surface of the P-type semiconductor layer 260, and a P-type electrode pad is formed in a portion of the upper surface of the transparent electrode layer 320. 340 may be formed.

The active layer 240 is an area where electrons and holes are recombined and includes InGaN. The emission wavelength extracted from the light emitting cell 200 is determined according to the type of material constituting the active layer 240. The active layer 240 may be a multilayer film in which a quantum well layer and a barrier layer are repeatedly formed. Barrier layer and the well layer may be a semiconductor layer 2-to 4 won the compounds represented by the general formula _{Al x In y Ga 1 -x- y} N (0≤x, y, x + y≤1).

In addition, a buffer layer 210 may be interposed between the substrate 100 and the N-type semiconductor layer 220. The buffer layer 210 is used to mitigate the lattice mismatch between the semiconductor layers to be formed thereon and the substrate 100. In addition, when the substrate 100 is conductive, the buffer layer 210 is formed of an insulating material or a semi-insulating material to electrically insulate the substrate 100 from the light emitting cell 200. The buffer layer 210 may be formed of nitride such as AlN, GaN, or the like. On the other hand, when the substrate 100 is insulating, such as sapphire, the buffer layer 210 may be formed of a conductive material.

As briefly mentioned above, part of the N-type semiconductor layer 220 is formed by lateral growth by a lateral epitaxial overgrowth (LEO) method. The N-type semiconductor layer 221 and the second to fourth N-type semiconductor layers 223, 225, and 226 are formed. In addition, scattering centers 222, 224, and 226 that cause lateral growth are provided between the second to fourth N-type semiconductor layers 223, 225, and 227 grown on the first N-type semiconductor layer 221. do.

The scattering centers 222, 224, and 226 are grown by growing the first N-type semiconductor layer 221, alternately stacking two or more insulating layers having different refractive indices into a plurality of layers, and then stacking them using photolithography. The insulating layer is formed by patterning etching. The pattern may be a mesh structure or a stripe structure.

The insulating layers constituting the scattering centers 222, 224, and 226 are alternately stacked in the form of a reflective film. For example, the SiO ₂ layer and the Si ₃ N ₄ layer may be alternately stacked alternately.

Whenever the scattering centers 222, 224, and 226 having a pattern shape are formed on the first N-type semiconductor layer 221, the second to fourth N-type semiconductor layers 223, 225, and 227 are epitaxially grown.

In the present embodiment, the first N-type semiconductor layer 221 is formed by growing in the vertical direction on the substrate 100 on which the low temperature buffer layer and / or the high temperature buffer layer are formed. The second and fourth N-type semiconductor layers 223, 225, and 227 and the scattering centers 222, 224, and 226 are formed by both vertical and transverse growth, which is enlarged in FIG. 1. In the figure, it is represented by an imaginary line.

The scattering centers 222, 224, and 226 are generated in the active layer 240 by increasing the reflectivity by performing a function of a distributed bragg reflector (DBR) as two or more insulating layers having different refractive indices are alternately stacked in multiple layers. The light transmitted through the scattering centers 222, 224, and 226 may be reduced in the semiconductor layer, and scattering may be efficiently caused by the scattering centers 222, 224, and 226 to be emitted to the outside of the light emitting diode. do.

Distributed Bragg Reflectors (DBRs) are used when high reflectivity is required in various light emitting devices including light emitting functions, light detection functions, light modulation functions, and the like.

DBR is a reflecting mirror which laminates | stacks two types of media from which refractive indices differ, and reflects light using the difference in refractive index.

In addition, by forming the scattering center in three layers instead of only one layer, the scattering center formed in the lower layer is formed by the scattering center formed in the lower layer even if the light traveling toward the substrate from the light generated in the active layer 240 passes through the scattering center formed in the upper layer. As it can be reflected and scattered, the light traveling to the substrate can be reduced and the amount of light emitted to the outside can be increased.

In addition, the lateral growth of the second to fourth N-type semiconductor layers 223, 225, and 227 may be caused by thermal expansion and / or lattice mismatch between the substrate 100 and the N-type semiconductor layer 220. Suppress grid defects. The scattering centers 222, 224, and 226 are used for lateral growth of the second to fourth N-type semiconductor layers 223, 225, and 227, and the backbone of the N-type semiconductor layer 220 is also used. It acts as a bone, thereby preventing the light emitting cell including the N-type semiconductor layer 220 is distorted on the substrate 100.

Hereinafter, a light emitting diode manufacturing method according to an exemplary embodiment of the present invention will be described with reference to FIGS. 2 to 6.

Referring to FIG. 2, the buffer layer 210 is formed on the substrate 100, and the first N-type semiconductor layer 221 is formed on the buffer layer 210. The buffer layer 210 and the first N-type semiconductor layer 221 are preferably formed by a metal organic chemical vapor deposition (MOCVD) method, but may be formed using a molecular beam growth (MBE) or a hydride vapor deposition (HVPE) method. Can be. The buffer layer 210 and the first N-type semiconductor layer 221 are continuously formed in the same process chamber.

In particular, the first N-type semiconductor layer 221 is a layer formed by adding a Si dopant, and is formed by growing in a vertical direction on the substrate 100 on which the buffer layer 210 is formed. An N-type semiconductor layer is grown on the substrate via organometallic chemical vapor deposition (MOCVD).

Next, as illustrated in FIG. 3, the scattering center 222 of the first layer is formed on the first N-type semiconductor layer 221. In the present embodiment, in order to form the scattering center 222, a SiO ₂ layer is laminated as the first insulating layer on the first N-type semiconductor layer 221. The thickness of the SiO ₂ layer to be laminated is preferably 10 GPa or more.

When the SiO ₂ layer is laminated on the first N-type semiconductor layer 221 as the first insulating layer, the Si ₃ N ₄ layer is laminated as the second insulating layer on the SiO ₂ layer. The thickness of the Si ₃ N ₄ layer to be laminated is preferably 10 GPa or more.

When a Si ₃ N ₄ layer is laminated as the _second insulating layer, SiO ₂ and Si ₃ N ₄ are alternately stacked as a plurality of layers as the insulating layer.

The number of alternating stacks of SiO ₂ and Si ₃ N ₄ forming the scattering center 222 may be determined in consideration of the thickness of each insulating layer.

After the SiO ₂ layer and the Si ₃ N ₄ layer are alternately stacked, the stacked insulating layers are patterned and etched using photolithography to form a scattering center 222 having a mesh pattern.

4 and 5, a second N-type semiconductor layer 223 is formed on the first N-type semiconductor layer 221 on which the scattering centers 222 are formed. The growth of the second N-type semiconductor layer 223 is performed in the above-described process chamber by MOCVD, and at this time, Si dopant is added. According to a preferred embodiment of the present invention, since the second N-type semiconductor layer 223 is made of GaN, GaN is not grown on the scattering center 222 made of an insulating layer, so that the scattering center 222 The second N-type semiconductor layer 223 growing in the vertical direction between the patterns is laterally grown as shown in FIG. 4 above the scattering center 222.

Next, the scattering center 224 of the second layer is formed on the second N-type semiconductor layer 223. In this embodiment, in order to form the scattering center 224, the SiO ₂ layer is stacked as the first insulating layer, similarly to the case where the scattering center 222 of the first layer is formed in the second N-type semiconductor layer 223. The thickness of the SiO ₂ layer to be laminated is preferably 10 GPa or more.

When the SiO ₂ layer is laminated on the second N-type semiconductor layer 223 as the first insulating layer, the Si ₃ N ₄ layer is laminated as the second insulating layer on the SiO ₂ layer. The thickness of the Si ₃ N ₄ layer to be laminated is preferably 10 GPa or more.

When a Si ₃ N ₄ layer is laminated as the _second insulating layer, SiO ₂ and Si ₃ N ₄ are alternately stacked as a plurality of layers as the insulating layer.

The number of alternating stacks of SiO ₂ and Si ₃ N ₄ forming the scattering center 224 may be determined in consideration of the thickness of each insulating layer.

After the SiO ₂ layer and the Si ₃ N ₄ layer are alternately stacked, the stacked insulating layers are patterned and etched using photolithography to form a scattering center 224 having a mesh pattern.

The third N-type semiconductor layer 225 is formed on the second N-type semiconductor layer 223 on which the scattering center 224 is formed. The growth of the third N-type semiconductor layer 225 is performed by the MOCVD method in the above-described process chamber, and Si dopant is added at this time. According to a preferred embodiment of the present invention, since the third N-type semiconductor layer 225 is made of GaN, GaN is not grown on the scattering center 224 consisting of an insulating layer, so that the scattering center 224 The third N-type semiconductor layer 225 growing in the vertical direction between the mesh patterns is laterally grown above the scattering center 224.

Next, the scattering center 226 of the third layer is formed on the top surface of the third N-type semiconductor layer 225. In this embodiment, in order to form the scattering center 226, the SiO ₂ layer is stacked as the first insulating layer as in the case of forming the scattering center 224 of the second layer in the third N-type semiconductor layer 225. The thickness of the SiO ₂ layer to be laminated is preferably 10 GPa or more.

When the SiO ₂ layer is laminated on the third N-type semiconductor layer 225 as the first insulating layer, the Si ₃ N ₄ layer is laminated as the second insulating layer on the SiO ₂ layer. The thickness of the Si ₃ N ₄ layer to be laminated is preferably 10 GPa or more.

When a Si ₃ N ₄ layer is laminated as the _second insulating layer, SiO ₂ and Si ₃ N ₄ are alternately stacked as a plurality of layers as the insulating layer.

The number of alternating stacks of SiO ₂ and Si ₃ N ₄ forming the scattering center 226 may be determined in consideration of the thickness of each insulating layer.

After the SiO ₂ layer and the Si ₃ N ₄ layer are alternately stacked, the stacked insulating layers are patterned and etched using photolithography to form a scattering center 226 having a mesh pattern.

The fourth N-type semiconductor layer 227 is formed on the third N-type semiconductor layer 225 on which the scattering center 226 is formed. The fourth N-type semiconductor layer 227 is grown in the above-described process chamber by MOCVD, and at this time, Si dopant is added. According to a preferred embodiment of the present invention, since the fourth N-type semiconductor layer 227 is made of GaN and GaN does not grow on the scattering center 226 formed of an insulating layer, the scattering center 226 The fourth N-type semiconductor layer 227 growing vertically between the patterns is laterally grown above the scattering center 226.

Next, in the same process chamber, the active layer 240 and the P-type semiconductor layer 260 are sequentially formed on the upper surface of the fourth N-type semiconductor layer 227 to form a stacked structure as shown in FIG. 6. At this time, a P-type dopant such as zinc (Zn) or magnesium (Mg) is added to the P-type semiconductor layer 260.

Next, although not shown, a process of forming a transparent electrode layer 320 (see FIG. 1) selected from Ni / Au, ITO, ZnO, and the like on the upper surface of the P-type semiconductor layer 260 and a part of the N-type semiconductor layer 220 A process of forming a mesa and a process of forming a P-type electrode pad 340 and an N-type electrode pad 330 in the exposed regions of the transparent electrode layer 320 and the N-type semiconductor layer 220 may be performed. As a result, a light emitting diode having a structure as shown in FIG. 1 can be manufactured.

Alternatively, a vertical light emitting diode in which a P-type electrode and an N-type electrode are provided up and down may be manufactured by taking a process of removing the substrate 100 from the light emitting cell.

The present invention is not limited to the above described embodiments, and various modifications and changes can be made by those skilled in the art, which are included in the spirit and scope of the present invention as defined in the appended claims.

For example, in the exemplary embodiment of the present invention, the scattering center 222 formed by alternately stacking SiO ₂ and Si ₃ N ₄ as a plurality of layers on the GaN-based first N-type semiconductor layer 221 as an insulating layer and patterning them. , 224, 226 are formed in multiple layers, and the second to fourth N-type semiconductor layers 223, 225, 227 are laterally grown in the LEO manner using the scattering centers 222, 224, 226 formed in the multilayer. The method and the light emitting diodes produced by the method have been mainly described.

However, in addition to SiO ₂ and Si ₃ N ₄ , the scattering center pattern may be formed using an insulating layer having different refractive indices as the insulating layer.

In addition, in the exemplary embodiment of the present invention, when the scattering centers 222, 224, and 226 are formed of three layers in the N-type semiconductor layer 220, the scattering centers 222, 224, and 226 of the three layers are formed. The size is formed equal to each other in all layers.

However, as shown in FIG. 7, the scattering center 224 arranged in the second layer is made smaller than the scattering center 222 arranged in the first layer, and the scattering center 224 arranged in the second layer is smaller. Modifications are possible by forming a smaller size of the scattering center 224 arranged in the third layer than the size of. As the size of the scattering center 226 increases as the upper layer increases, the crystal growth of the N-type semiconductor layer 220 may be further improved, and the thickness of the N-type semiconductor layer may be reduced.

In addition, although not shown, the size of the scattering center arranged in the second layer is larger than the size of the scattering center arranged in the first layer, and the size of the scattering center arranged in the third layer is larger than the size of the scattering center arranged in the second layer. Modifications can be made that are made larger. As such, when the size of the scattering center is increased to the upper layer and the size of the scattering center of the layer close to the active layer 240 is increased, the scattering effect can be further improved by reflecting light generated in the active layer 240 more effectively.

In addition, the size of the scattering centers arranged in each layer may be modified so that each layer is the same and is formed differently for each layer.

In addition, according to an embodiment of the present invention, when scattering centers 222, 224, and 226 formed of three layers are formed in the N-type semiconductor layer 220, each scattering center 222, 224, and 226 formed in three layers is formed. ) Is formed at the same position in each layer.

However, as shown in FIG. 8, the positions of the scattering centers 222 arranged in the first layer and the scattering centers 224 arranged in the second layer are slightly staggered, and the scattering centers arranged in the second layer ( A modification is possible in which the position of 224 is slightly offset from the position of the scattering center 224 arranged in the third layer. As such, when the positions of the scattering centers 226 are slightly staggered from the adjacent layers, even if the light generated in the active layer 240 passes through the scattering centers disposed in the upper layer or passes through the portion where the scattering centers are not formed, the scattering centers 226 slightly cross the upper layers. As it can be reflected by the scattering center of the disposed lower layer, the scattering effect can be further improved.

Of course, the size of the scattering center formed in each layer in Figure 8 is to be smaller as the upper layer, but may be the same size and may be larger as the upper layer, and may be variously modified in size.

In addition, in FIG. 8, the positions of the scattering centers formed in the first layer and the scattering centers formed in the second layer are staggered, and the positions of the scattering centers formed in the first layer and the positions of the scattering centers formed in the third layer coincide with each other. It is possible to modify the scattering centers formed in the layers so that the positions of the scattering centers do not coincide with each other and are all slightly staggered.

In addition, as shown in FIG. 9, the scattering centers 222 are formed of three layers formed on the N-type semiconductor layer 220 by forming the uneven pattern 110 on the substrate 100 so that the light generated in the active layer 240 is formed in the N-type semiconductor layer 220. , 224 and 226 may be modified to reflect the light reaching the substrate to emit light to the outside to improve the light efficiency.

According to the present invention, in the light emitting device, an insulating layer having different refractive indices is stacked between the substrate and the active layer to form a scattering center for forming a DBR, thereby reducing light transmittance at the scattering center, improving reflectance, and forming a plurality of scattering centers. By arranging the layers, the reflectance at the scattering centers can be much improved compared to arranging the scattering centers in one layer. As a result, light generated by the active layer is transmitted through the scattering center and is not extinct in the light emitting device, but is scattered by the scattering center and can be efficiently emitted to the outside, thereby improving light efficiency.

In addition, the lateral growth of the semiconductor layer by the LEO method using a scattering center formed by arranging lattice defects such as dislocations caused by lattice mismatch and / or difference in heat transfer rate between the substrate and the semiconductor layer in a plurality of layers is prevented. Can be suppressed through.

Claims (14)

In the method of manufacturing a light emitting device formed by forming a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer therebetween on a substrate, Growing a first conductivity type semiconductor layer on the substrate, A plurality of scattering centers formed by alternately stacking two or more insulating layers having different refractive indices on the first conductive semiconductor layer and alternating at least two or more times of the first conductive semiconductor layer formed again on the scattering center Forming step, And forming an active layer and a second conductive semiconductor layer on the first conductive semiconductor layer. The method of claim 1, wherein the alternating step is Alternately stacking two or more insulating layers having different refractive indices on the first grown semiconductor layer; Patterning the stacked insulating layers so that a part of the first conductive semiconductor layer positioned below the insulating layer is exposed to form a scattering center; Growing the first conductive semiconductor layer on the scattering center again; The method of manufacturing a light emitting device is performed by repeating the lamination step, the scattering center forming step and the growth step again. The method of claim 2, wherein the laminating step, A method of manufacturing a light emitting device, in which an SiO ₂ layer and an Si ₃ N ₄ layer are alternately laminated. The method of claim 2, wherein the laminating step, A method of manufacturing a light emitting device in which two or more different insulating layers are alternately repeatedly stacked in a plurality of layers. The method of claim 2, wherein the scattering center forming step And modifying the position of the patterning etching layer by layer such that the scattering centers are alternately positioned with each layer. The method of claim 2, wherein the scattering center forming step The method of manufacturing a light emitting device for modifying the size of the patterning etching for each layer so that the same size of the scattering center is the same in each layer, each layer has a different size. The method of claim 2, wherein the scattering center forming step, Method of manufacturing a light emitting device for etching the laminated insulating layer by a mask pattern of a mesh form using photolithography. The method of claim 1, wherein the substrate is a substrate having a concave-convex pattern formed on a surface thereof. In a light emitting device formed by forming a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer therebetween on a substrate, Substrate, First to nth layers formed of a first conductivity type semiconductor layer on the substrate; An active layer and a second conductivity type semiconductor layer formed on the nth layer, And a plurality of scattering centers formed by alternately stacking two or more insulating layers having different refractive indices between the layers of the first to nth layers. The method of claim 9, wherein the plurality of scattering centers are A light emitting device in which an SiO ₂ layer and an Si ₃ N ₄ layer are alternately stacked. The method of claim 9, wherein the plurality of scattering centers are A light emitting device stacked in a plurality of layers by repeatedly alternating two or more different insulating layers. The method of claim 9, wherein the plurality of scattering centers are A light emitting device in which the positions of the scattering centers located in each layer are positioned so that adjacent layers are alternate with each other. The method of claim 9, wherein the plurality of scattering centers are The light emitting device having the same size as the scattering center in the same layer, each layer having a different size. The light emitting device of claim 9, wherein the substrate is a substrate having a concave-convex pattern formed on a surface thereof.

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