KR20080060371A - Method for measuring surface charge of thin film in semiconductor device - Google Patents

Abstract

A method of measuring thin film surface charges of a semiconductor device is provided to analyze degradation of device characteristic caused by charges generated from plasma, by measuring the charges during an HDP deposition process. A charge shielding layer(111) is formed on a substrate(110). A thin film, a HDP(High Density Plasma) layer, is deposited on the charge shielding layer. A surface electric potential between the substrate and the thin film is measured. The charge shielding layer is formed of one selected from a group consisting of an oxide layer, a nitride layer and an oxide-nitride layer.

Description

METHOD FOR MEASURING SURFACE CHARGE OF THIN FILM IN SEMICONDUCTOR DEVICE}

1A to 1C are cross-sectional views showing a thin film surface charge measurement method according to the prior art.

2A to 2D are cross-sectional views illustrating a method for measuring a thin film surface charge according to an embodiment of the present invention.

<Explanation of symbols for main parts of drawing>

10, 110: substrate

11, 112: HDP (High Density Plasma) film

20, 130: measuring equipment

111: charge blocking film

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for measuring damage to semiconductor devices, and in particular, to measure plasma damage generated during a deposition process of CVD-HDP (Chemical Vapor Depostion-High Density Plasma) during the deposition process of semiconductor devices using plasma equipment. It is about a method.

In the semiconductor device manufacturing process, a CVD-HDP film is used as a material having excellent embedding characteristics. However, since the CVD-HDP film uses plasma equipment, the substrate or the structure layer formed on the substrate may be damaged by the plasma generated during the process. Accordingly, analyzing the damage caused by plasma by accurately measuring the charge generated during the HDP film manufacturing process serves as an important factor in determining the characteristics of the device.

1A to 1C are cross-sectional views illustrating a charge measurement method performed after the HDP manufacturing process according to the prior art.

Referring to FIG. 1A, an HDP film 11 is deposited on a substrate 10 or a substrate 10 on which a predetermined structure layer is formed. At this time, the surface chrge generated during the HDP film 11 deposition process does not remain in the HDP film 11, and exits to the substrate 10 as shown in FIG. 1B. The reason is that the HDP film 11 is a material having a strong leakage characteristic. Then, the charge is measured using the charge measuring device 20 as shown in Figure 1c.

However, in the charge measurement using the charge measuring device 20, since the charges in the HDP film 11 escape to the substrate 10 and hardly exist, measuring the surface charge by using the contact potential difference is practical. it's difficult. As a result, monitoring of plasma damage is impossible and failure analysis of the device becomes difficult.

Accordingly, the present invention has been proposed to solve the problems according to the prior art, and provides a thin film surface charge measurement method of a semiconductor device capable of stably measuring the charge generated during the thin film deposition process using plasma equipment. There is a purpose.

According to an aspect of the present invention, there is provided a thin film surface charge measuring method for measuring charges generated during a thin film deposition process, the method comprising: forming a charge blocking film on a substrate; It provides a thin film surface charge measurement method of a semiconductor device comprising the step of depositing the thin film, and measuring the surface potential difference between the substrate and the thin film.

DETAILED DESCRIPTION Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the technical idea of the present invention. In addition, parts denoted by the same reference numerals (reference numbers) throughout the specification represent the same components.

Example

2A to 2D are cross-sectional views illustrating a method for measuring a thin film surface charge of a semiconductor device according to an embodiment of the present invention. Here, the CVD-HDP film will be described as an example.

First, as shown in FIG. 2A, a dense charge blocking layer 111 is formed on the substrate 110 or a substrate on which a predetermined structure layer is formed. Here, the charge blocking layer 111 serves to prevent the charges generated during the subsequent HDP film 112 (see FIG. 2B) deposition process from escaping to the substrate 110. In this case, the charge blocking layer 111 may be formed of an oxide, a nitride, or an oxynitride. For example, the oxide film may be formed using a silicon enhanced chemical vapor deposition (PECVD) process using a silicon oxide film (SiO ₂ ) or may be formed using a thermal oxidation process.

Subsequently, as shown in FIG. 2B, a CVD-HDP film 112 is deposited on the charge blocking film 111. In this process, charges are generated by plasma non-uniformity and high temperature, and the generated charges do not escape to the substrate 110 by the charge blocking film 111 as shown in FIG. It remains trapped on and inside the surface.

Subsequently, as shown in FIG. 2D, the surface potential difference between the substrate 110 and the HDP film 112 is measured using the charge measuring device 120, through which the HDP film 112 traps the surface and the inside. The charge can be measured to analyze the phenomenon in which the charge deteriorates the characteristics of the device due to the plasma.

As described above, although the technical spirit of the present invention has been described in detail in the preferred embodiments, it should be noted that the above-described embodiments are for the purpose of description and not of limitation. In addition, the present invention is not limited to the measurement of the charge generated during the deposition process on the CVD-HDP film, it is also applicable to a method for measuring the charge generated in the plasma deposition equipment. In addition, those skilled in the art will understand that various embodiments are possible within the scope of the technical idea of the present invention.

As described above, according to the present invention, a charge blocking film is formed below the HDP film before deposition, thereby preventing the charge generated during the HDP film deposition process from escaping to the bottom, thereby stably generated during the HDP film deposition process. By measuring the charge that is generated, it is possible to analyze the phenomenon in which the charge generated due to the plasma deteriorates the characteristics of the device.

Claims (4)

In the thin film surface charge measurement method for measuring the charge generated during the thin film deposition process, Forming a charge blocking film on the substrate; Depositing the thin film on the charge blocking layer; And Measuring a surface potential difference between the substrate and the thin film Thin film surface charge measurement method of a semiconductor device comprising a. The method of claim 1, The thin film is a high density plasma film (HDP) film, the surface charge measurement method of a semiconductor device. The method of claim 1, The charge blocking film is a thin film surface charge measurement method of a semiconductor device formed of any one of an oxide film, a nitride film and an oxynitride film. The method of claim 3, wherein Wherein the oxide film is a plasma enhanced chemical vapor deposition (PECVD) or a thin film surface charge measurement method of a semiconductor device formed by a thermal oxidation process.

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