KR20080051268A - Organic light emitting device - Google Patents

Abstract

An organic light emitting display device is provided to prevent a path of light emitted to the outside, to improve color purity and color reproduction, and to prevent a view angle from being narrowed by evenly controlling the light path. An organic light emitting display device includes a substrate(110), a first electrode, a second electrode, a light emitting member(370), a semitransparent member(193), and a semicircular auxiliary member(330). The first electrode is formed on the substrate. The second electrode is opposite to the first electrode. The light emitting member is positioned between the first electrode and the second electrode. The semitransparent member is positioned in a lower part of the light emitting member which forms the second electrode and a microcavity. The semicircular auxiliary member is positioned in the lower part of the light emitting member.

Description

Organic light emitting display device {ORGANIC LIGHT EMITTING DEVICE}

1 is an equivalent circuit diagram of an organic light emitting diode display according to an exemplary embodiment of the present invention.

2 is an enlarged layout view of one pixel in an organic light emitting diode display according to an exemplary embodiment of the present invention.

3 is a cross-sectional view of the organic light emitting diode display of FIG. 2 taken along a line III-III'-III "-III" ',

4A, 4B, and 4C are cross-sectional views taken along the line IV-IV of the organic light emitting diode display of FIG. 2, according to an exemplary embodiment.

<Description of Drawing>

110: insulating substrate 121: gate line

124a: switching control electrode 124b: drive control electrode

129: end of gate line

140: gate insulating film 154a: switching semiconductor

154b: driving semiconductors 163a, 163b, 165a, and 165b: ohmic contacts

171: data line 172: driving voltage line

173a: switching input electrode 173b: drive input electrode

175a: switching output electrode 175b: driving output electrode

179: end of data line 81, 82: contact auxiliary member

85: connection member 181, 182, 184, 185a, 185b: contact hole

191: pixel electrode 193: translucent member

270: common electrode 330: auxiliary member

361: embank 365: opening

370: light emitting layer

Qs: switching thin film transistor Qd: driving thin film transistor

LD: organic light emitting diamond Vss: common voltage

Cst: retaining capacitor

The present invention relates to an organic light emitting display device.

Recently, there is a demand for weight reduction and thinning of a monitor or a television, and according to such a demand, a cathode ray tube (CRT) has been replaced by a liquid crystal display (LCD).

However, the liquid crystal display device requires not only a separate backlight as a light emitting device, but also has many problems in response speed and viewing angle.

Recently, as a display device capable of overcoming such a problem, an organic light emitting device (OLED) has attracted attention.

The organic light emitting diode display includes two electrodes and a light emitting layer interposed therebetween, and electrons injected from one electrode and holes injected from another electrode are combined in the light emitting layer to form excitons. The excitons emit light while releasing energy.

The organic light emitting display is self-luminous and does not require a separate light source, which is advantageous in terms of power consumption, and also has an excellent response speed and contrast ratio.

Meanwhile, the organic light emitting diode display may include a plurality of pixels, such as a red pixel, a blue pixel, and a green pixel, and may combine these pixels to display full color.

However, the organic light emitting diode display has different luminous efficiency depending on the light emitting material. In this case, a material having a low luminous efficiency among red, green, and blue cannot produce a color having a desired color coordinate, and thus the color reproduction rate is lowered. In order to solve this problem, a method of increasing color reproducibility using a microcavity effect has been proposed, but by adding a layer compared to the existing structure, the optical path may be changed and the viewing angle may be narrowed.

Accordingly, the technical problem to be solved by the present invention is to solve the problem, and to increase the color reproducibility of the organic light emitting diode display and to widen the viewing angle.

An organic light emitting diode display according to an exemplary embodiment of the present invention includes a substrate, a first electrode formed on the substrate, a second electrode facing the first electrode, and light emission positioned between the first electrode and the second electrode. And a semi-transparent member positioned under the light emitting member and forming a microcavity with the second electrode, and a hemispherical auxiliary member positioned under the light emitting member.

The hemispherical auxiliary member may have a contact angle of 2 to 120 degrees with respect to the substrate.

The hemispherical auxiliary member may have an electrical conductivity value of 10 ⁻⁸ to 10 ⁻¹ S / cm.

The hemispherical auxiliary member may have a thickness of 0.2 to 3 μm.

The organic light emitting diode display may include a first semiconductor formed on the substrate, a first control electrode overlapping the first semiconductor, a first input electrode and a first output electrode in contact with the first semiconductor and facing each other; The semiconductor device may further include a passivation layer formed on the first input electrode and the first output electrode, and the hemispherical auxiliary member may be positioned between the first input electrode and the second output electrode and the passivation layer.

The organic light emitting diode display may include a first semiconductor formed on the substrate, a first control electrode overlapping the first semiconductor, a first input electrode and a first output electrode in contact with the first semiconductor and facing each other; The semiconductor device may further include a passivation layer formed on the first input electrode and the first output electrode and positioned below the translucent member, wherein the hemispherical auxiliary member may be positioned between the passivation layer and the translucent member.

The organic light emitting diode display includes a second output electrode connected to the first control electrode, a second input electrode facing the second output electrode, a second output electrode contacting the second output electrode, and a second input electrode. The semiconductor device may further include a second control electrode overlapping the second semiconductor, wherein the first semiconductor may include a crystalline semiconductor material and the second semiconductor may include an amorphous semiconductor material.

The hemispherical auxiliary member may be positioned between the first electrode and the light emitting member.

The translucent member may include at least one selected from silver (Ag) or aluminum (Al).

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention.

In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. Like parts are designated by like reference numerals throughout the specification. When a part of a layer, film, region, plate, etc. is said to be "on" another part, this includes not only the other part being "right over" but also another part in the middle. On the contrary, when a part is "just above" another part, there is no other part in the middle.

First, an organic light emitting diode display according to an exemplary embodiment of the present invention will be described in detail with reference to FIG. 1.

1 is an equivalent circuit diagram of an organic light emitting diode display according to an exemplary embodiment of the present invention.

Referring to FIG. 1, the organic light emitting diode display according to the present exemplary embodiment includes a plurality of signal lines 121, 171, and 172 and a plurality of pixels PX connected to the plurality of signal lines 121, 171, and 172 and arranged in a substantially matrix form. ).

The signal line includes a plurality of gate lines 121 for transmitting a gate signal (or scan signal), a plurality of data lines 171 for transmitting a data signal, and a plurality of driving voltage lines for transmitting a driving voltage. and a driving voltage line 172. The gate lines 121 extend substantially in the row direction, and are substantially parallel to each other, and the data line 171 and the driving voltage line 172 extend substantially in the column direction, and are substantially parallel to each other.

Each pixel PX includes a switching thin film transistor (Qs), a driving thin film transistor (Qd), a storage capacitor (Cst), and an organic light emitting diode. , OLED) (LD).

The switching thin film transistor Qs has a control terminal, an input terminal, and an output terminal, and the control terminal is connected to the gate line 121, and the input terminal is a data line ( The output terminal is connected to the driving thin film transistor Qd. The switching thin film transistor Qs transfers a data signal applied to the data line 171 to the driving thin film transistor Qd in response to a scan signal applied to the gate line 121.

The driving thin film transistor Qd also has a control terminal, an input terminal, and an output terminal. The control terminal is connected to the switching thin film transistor Qs, the input terminal is connected to the driving voltage line 172, and the output terminal is organic. It is connected to the light emitting diode LD. The driving thin film transistor Qd flows an output current I _LD whose magnitude varies depending on the voltage applied between the control terminal and the output terminal.

The capacitor Cst is connected between the control terminal and the input terminal of the driving thin film transistor Qd. The capacitor Cst charges a data signal applied to the control terminal of the driving thin film transistor Qd and maintains it even after the switching thin film transistor Qs is turned off.

The organic light emitting diode LD has an anode connected to the output terminal of the driving thin film transistor Qd and a cathode connected to the common voltage Vss. The organic light emitting diode LD displays an image by emitting light having a different intensity depending on the output current I _LD of the driving thin film transistor Qd.

The switching thin film transistor Qs and the driving thin film transistor Qd are n-channel field effect transistors (FETs). However, at least one of the switching thin film transistor Qs and the driving thin film transistor Qd may be a p-channel field effect transistor. In addition, the connection relationship between the thin film transistors Qs and Qd, the capacitor Cst, and the organic light emitting diode LD may be changed.

Next, a detailed structure of the organic light emitting diode display illustrated in FIG. 1 will be described in detail with reference to FIGS. 2 to 4A along with FIG. 1.

2 is an enlarged layout view of one pixel in an organic light emitting diode display according to an exemplary embodiment, and FIGS. 3 and 4a illustrate III-III′-III ″ -III of the organic light emitting diode display of FIG. 2. Sectional view taken along line "'and line IV-IV.

A plurality of driving semiconductors 154b and a plurality of linear semiconductor members 151 are formed on an insulating substrate 110 made of transparent glass or plastic.

The driving semiconductor 154b is island-shaped, and the linear semiconductor member 151 mainly extends in the horizontal direction. The driving semiconductor 154b and the linear semiconductor member 151 may be made of a crystalline semiconductor material such as microcrystalline silicon or polycrystalline silicon.

The driving semiconductor 154b and the linear semiconductor member 151 include a plurality of gate lines 121, a plurality of driving input electrodes 173b, and a plurality of driving output electrodes 175b. A gate conductor is formed.

The gate line 121 transmits a gate signal and mainly extends in a horizontal direction. Each gate line 121 includes an end portion 129 having a large area for connecting the switching control electrode 124a extending upward to another layer or an external driving circuit. When a gate driving circuit (not shown) generating a gate signal is integrated on the substrate 110, the gate line 121 may extend to be directly connected to the gate driving circuit.

The gate line 121 has a plane shape substantially the same as that of the linear semiconductor member 151.

The driving input electrode 173b and the driving output electrode 175b each have an island shape and are separated from the gate line 121. The driving input electrode 173b and the driving output electrode 175b face each other over the driving semiconductor 154b.

The gate conductor may be aluminum-based metal such as aluminum (Al) or aluminum alloy, silver-based metal such as silver (Ag) or silver alloy, copper-based metal such as copper (Cu) or copper alloy, or molybdenum-based such as molybdenum (Mo) or molybdenum alloy It may be made of metal, chromium (Cr), tantalum (Ta) and titanium (Ti). However, they may have a multilayer structure including two conductive films (not shown) having different physical properties.

The gate conductor is inclined with respect to the surface of the substrate 110 and the inclination angle is preferably about 30 ° to about 80 °.

A plurality of pairs of ohmic contacts 163b and 165b are formed between the driving semiconductor 154b and the driving input electrode 173b and between the driving semiconductor 154b and the driving output electrode 175b, respectively. In addition, a linear semiconductor member 161 is doped with an impurity between the gate line 121 and the linear semiconductor member 151.

The ohmic contacts 163b and 165b and the linear semiconductor member 161 doped with impurities are crystalline with dopants such as fine crystalline silicon or polycrystalline silicon doped with a high concentration of n-type impurities such as phosphorus (P). It can be made of a semiconductor material.

A gate insulating layer 140 made of silicon oxide (SiO ₂ ) or silicon nitride (SiN _x ) is formed on the gate conductor. The gate insulating layer 140 may be a single layer or a plurality of layers including a first layer made of silicon oxide and a second layer made of silicon nitride.

A plurality of switching semiconductors 154a made of hydrogenated amorphous silicon are formed on the gate insulating layer 140. The switching semiconductor 154a has an island shape and overlaps the switching control electrode 124a.

A data conductor including a plurality of data lines 171, a plurality of driving voltage lines 172, and a plurality of electrode members 176 is formed on the switching semiconductor 154a and the gate insulating layer 140.

The data line 171 transmits a data signal and mainly extends in the vertical direction to cross the gate line 121. Each data line 171 has a wide end portion 179 for connection with a plurality of switching input electrodes 173a extending toward the switching control electrode 124a and another layer or an external driving circuit. Include. When a data driving circuit (not shown) generating a data signal is integrated on the substrate 110, the data line 171 may be extended to be directly connected to the data driving circuit.

The driving voltage line 172 transmits a driving voltage and mainly extends in a vertical direction to cross the gate line 121 and is substantially parallel to the data line 171. Each driving voltage line 172 includes a protrusion 177.

The electrode member 176 is an island and is separated from the data line 171 and the driving voltage line 172. The electrode member 176 overlaps the portion facing the switching input electrode 173a (hereinafter referred to as a 'switching output electrode') 175a and the driving semiconductor 154b (hereinafter referred to as a 'drive control electrode') ( 124b). The switching input electrode 173a and the switching output electrode 175a face each other over the switching semiconductor 154a.

The data conductor may be made of the same material as the gate line 121 described above.

The side of the data conductor is inclined with respect to the surface of the substrate 110 and the inclination angle is preferably about 30 ° to about 80 °.

A plurality of pairs of ohmic contacts 163a and 165a are formed between the switching semiconductor 154a and the switching input electrode 173a and between the switching semiconductor 154a and the switching output electrode 175a, respectively. The ohmic contacts 163a and 165a have an island shape and may be made of n + hydrogenated amorphous silicon in which impurities such as phosphorus (P) are heavily doped.

The auxiliary member 330 is formed on the data conductor. The auxiliary member 330 is positioned in a pixel area partitioned by the gate line 121 and the data line 171 and has a semisphere shape. The hemispherical shape is convex at the top, and may have a contact angle of about 2 to 120 degrees with respect to the substrate, for example.

The auxiliary member 330 is made of an organic material having a low conductivity of about 10 ⁻⁸ to 10 ⁻¹ S / cm and may be formed to a thickness of about 0.2 to 3 μm. The auxiliary member 330 may be formed by an inkjet printing method in which an organic solution is dropped in each pixel.

A passivation layer 180 is formed on the data conductor and the auxiliary member 330.

The passivation layer 180 is formed with a plurality of contact holes 185a and 182 exposing the protrusion 177 of the driving voltage line 172 and the end portion 179 of the data line 171, and the passivation layer 180. ) And the gate insulating layer 140, a plurality of contact holes 181, 184, and 185b exposing the end portion 129 of the gate line 121, the driving input electrode 173b, and the driving output electrode 175b are formed. .

A semi-transparent member 193 is formed on the passivation layer 180. The translucent member 193 is positioned above the auxiliary member 330 in the pixel area. The translucent member 193 is not particularly limited as long as it is a material having a property of transmitting a portion of light and reflecting a portion of light. It can be made translucent by forming into a thin thickness of -1000 kPa.

A plurality of pixel electrodes 191, a plurality of connection members 85, and a plurality of contact assistants 81 and 82 are formed on the passivation layer 180 and the translucent member 193.

The pixel electrode 191 is connected to the driving output electrode 175b through the contact hole 185b.

The connecting member 85 is connected to the protrusion 177 of the driving voltage line 172 and the driving input electrode 173b through the contact holes 184 and 185a, respectively, and partially overlaps with the driving control electrode 124b. (storage capacitor) (Cst).

The contact auxiliary members 81 and 82 are connected to the end portion 129 of the gate line 121 and the end portion 179 of the data line 171 through the contact holes 181 and 182, respectively. The contact auxiliary members 81 and 82 compensate for and protect the adhesion between the end portions 129 and 179 of the gate line 121 and the data line 171 and the external device.

The pixel electrode 191, the connection member 85, and the contact assistants 81 and 82 may be made of a transparent conductor such as ITO or IZO.

In the present exemplary embodiment, only the translucent member 193 is positioned below the pixel electrode 191, but it may be located above the pixel electrode 191.

An insulating bank 361 is formed on the pixel electrode 191, the translucent member 193, the connection member 85, and the contact auxiliary members 81 and 82. The weir 361 defines an opening 365 by surrounding the edge of the pixel electrode 191. Weir 361 may be made of an organic insulator such as acrylic resin, polyimide resin, or an inorganic insulator such as silicon oxide (SiO ₂ ) or titanium oxide (TiO ₂ ). It may be, and may be two or more layers. Weir 361 may also be made of a photoresist comprising a black pigment, in which case weir 361 serves as a light shielding member and the forming process is simple.

An organic light emitting member is formed on the bank 361 and the pixel electrode 191.

The organic light emitting member may include an auxiliary layer (not shown) for improving the light emitting efficiency of the light emitting layer in addition to the light emitting layer 370 that emits light.

The light emitting layer is made of an organic material or a mixture of organic and inorganic materials that inherently emits light of any one of primary colors such as three primary colors of red, green, and blue, and a polyfluorene derivative (poly) Paraphenylenevinylene (poly) paraphenylenevinylene derivatives, polyphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole, polythiophene derivatives or polymer materials thereof Perylene-based dyes, coumarin-based dyes, rhodamine-based dyes, rubrene, perylene, 9,10-diphenylanthracene, tetraphenylbutadiene ( Compounds doped with tetraphenylbutadiene, nile red, coumarin, quinacridone, and the like may be included. The organic light emitting diode display displays a desired image by using a spatial sum of primary color light emitted from the emission layer.

The auxiliary layer includes an electron transport layer (not shown) and a hole transport layer (not shown) for balancing electrons and holes, and an electron injection layer for enhancing the injection of electrons and holes ( electron injecting layer (not shown) and hole injecting layer (hole injecting layer) (not shown) and the like, and may include one or two or more layers selected from them. The hole transport layer and the hole injection layer are made of a material having a work function that is about the middle of the pixel electrode 191 and the light emitting layer, and the electron transport layer and the electron injection layer have a work function that is about the middle of the common electrode 270 and the light emitting layer. Is made with. For example, a mixture of polyethylene dioxythiophene and polystyrene sulfonic acid (poly- (3,4-ethylenedioxythiophene: polystyrenesulfonate, PEDOT: PSS)) may be used as the hole transport layer or the hole injection layer.

A common electrode 270 made of an opaque conductor such as aluminum is formed on the organic light emitting member 370. The common electrode 270 is formed on the entire surface of the substrate, and pairs with the pixel electrode 191 to send a current to the organic light emitting member 370.

The common electrode 270 generates a microcavity effect together with the translucent member 193. The fine resonance effect is to amplify the light of a specific wavelength by repeatedly reflecting the reflective layer and the translucent layer where the light is separated by a predetermined distance. The common electrode 270 serves as a reflective layer and the translucent member 193 serves as a translucent layer.

The common electrode 270 forms a microcavity that greatly modifies the luminescence properties emitted from the light emitting layer 370, and light emission near the wavelength corresponding to the resonance wavelength of the micro resonance is enhanced through the translucent member 193, and the other wavelengths. Light is suppressed. In this case, the enhancement and suppression of light of a specific wavelength may be determined according to the distance between the common electrode 270 and the translucent member 193. Therefore, light of a specific wavelength may be enhanced and suppressed by controlling the thickness of the light emitting layer 370 and the auxiliary layer (not shown). For example, when the luminous efficiency of the blue light emitting material among the red, green, and blue light emitting materials is low, as described above, a fine resonance effect may be generated between the common electrode 270 and the translucent member 193 to emit blue light. Therefore, by increasing the blue purity and color reproducibility, it is possible to overcome the limitation of the luminous efficiency by the light emitting material and to produce a desired color.

Although the light emission efficiency of the blue light emitting material is the lowest among the red, green, and blue light emitting materials, only the blue pixel is exemplarily described. However, when the light efficiency of the red or green light emitting material is lower, The same can be applied.

On the other hand, the hemispherical auxiliary member 330 can prevent the path of the light emitted from the light emitting layer 370 is changed by the semi-transparent member 193. As described above, the translucent member 193 is positioned between the light emitting layer 370 and the substrate to pass light emitted from the light emitting layer 370 and emit light of a specific wavelength. At this time, the light path is changed while the light passes through the translucent member 193. Since the surface of the hemispherical auxiliary member 330 is convex, the light may pass at the same angle with respect to the surface of the auxiliary member 330 regardless of the incident light in any direction. Can be. Accordingly, the auxiliary member 330 may prevent the light path from being changed by the translucent member 193 and may uniformly control the light path to prevent the viewing angle from being narrowed.

In the organic light emitting diode display, the switching control electrode 124a connected to the gate line 121, the switching input electrode 173a connected to the data line 171, and the switching output electrode 175a are connected to the switching semiconductor 154a. ) And a switching TFT Qs, and a channel of the switching TFT Qs is formed in the switching semiconductor 154a between the switching input electrode 173a and the switching output electrode 175a. do. The driving control electrode 124b connected to the switching output electrode 175a, the driving input electrode 173b connected to the driving voltage line 172, and the driving output electrode 175b connected to the pixel electrode 191 are driven. A driving TFT Qd is formed together with the semiconductor 154b, and a channel of the driving TFT Qd is formed in the driving semiconductor 154b between the driving input electrode 173b and the driving output electrode 175b. do.

As described above, the switching semiconductor 154a is made of an amorphous semiconductor, and the driving semiconductor 155b is made of a fine crystalline or polycrystalline semiconductor. That is, the channel of the switching thin film transistor is formed in the amorphous semiconductor, and the channel of the driving thin film transistor is formed in the fine crystalline or polycrystalline semiconductor.

As described above, the channels of the switching thin film transistor and the driving thin film transistor are formed in semiconductors having different crystalline properties, thereby satisfying the characteristics required for each thin film transistor.

By forming the channel of the driving thin film transistor in the microcrystalline or polycrystalline semiconductor, the carrier thin film may have high carrier mobility and stability, thereby increasing the amount of current flowing through the light emitting device, thereby increasing luminance. In addition, by forming the channel of the driving thin film transistor in the microcrystalline or polycrystalline semiconductor, it prevents the threshold voltage shift phenomenon (Vth shift) caused by the continuous application of a positive voltage during driving, image sticking and It can prevent the life shortening.

On the other hand, since the switching thin film transistor plays a role of controlling the data voltage, on / off characteristics are important, and in particular, it is important to reduce the off current. However, since the microcrystalline or polycrystalline semiconductor has a large off current, the data voltage passing through the switching thin film transistor may decrease and crosstalk may occur. Therefore, in the present invention, the switching thin film transistor is formed of an amorphous semiconductor having a small off current, thereby preventing a decrease in data voltage and reducing cross talk.

Although only one switching thin film transistor and one driving thin film transistor are shown in the present embodiment, at least one thin film transistor and a plurality of wirings for driving the same are further included, so that the organic light emitting diode LD and the driving transistor may be driven even for a long time. It is possible to prevent or compensate for deterioration of the Qd so as to shorten the lifespan of the organic light emitting display device.

The pixel electrode 191, the organic light emitting member 370, and the common electrode 270 form an organic light emitting diode LD, and the pixel electrode 191 is an anode and the common electrode 270 is a cathode. Alternatively, the pixel electrode 191 becomes a cathode and the common electrode 270 becomes an anode. In addition, the storage electrode 127 and the driving voltage line 172 overlapping each other form a storage capacitor Cst.

Next, other embodiments of the present invention will be described with reference to FIGS. 4B and 4C along with FIGS. 2 and 3.

4B and 4C are cross-sectional views taken along the line IV-IV of the organic light emitting diode display of FIG. 2, respectively, according to one embodiment of the present invention.

4B and 4C have different positions of the auxiliary member 330 compared with the above-described embodiment. That is, in the above-described embodiment, the auxiliary member 330 is positioned between the data conductor and the passivation layer 180. In the embodiment shown in FIG. 4B, the auxiliary member 330 is disposed between the passivation layer 180 and the translucent member 193. In the embodiment shown in FIG. 4C, the auxiliary member 330 is positioned between the pixel electrode 191 and the light emitting member 370.

In any of the above-described embodiments, the light emitted from the light emitting layer 370 passes through the hemispherical auxiliary member 330, thereby preventing the light path from being changed and controlling the light path uniformly to prevent the viewing angle from being narrowed. have.

Although the preferred embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improvements of those skilled in the art using the basic concepts of the present invention defined in the following claims are also provided. It belongs to the scope of the invention.

In addition to improving color purity and color reproducibility, the path of light emitted to the outside can be prevented from changing and the light path can be uniformly controlled to prevent the viewing angle from being narrowed.

Claims (9)

Board, A first electrode formed on the substrate, A second electrode facing the first electrode, A light emitting member positioned between the first electrode and the second electrode, A translucent member positioned under the light emitting member and forming microcavity with the second electrode, and Hemispherical auxiliary member positioned below the light emitting member An organic light emitting display device comprising a. In claim 1, The hemispherical auxiliary member has a contact angle of 2 to 120 degrees with respect to the substrate. In claim 2, The hemispherical auxiliary member has an electric conductivity value of 10 ⁻⁸ to 10 ⁻¹ S / cm. In claim 3, The hemispherical auxiliary member has a thickness of 0.2 to 3 μm. In claim 1, A first semiconductor formed on the substrate, A first control electrode overlapping the first semiconductor, A first input electrode and a first output electrode in contact with the first semiconductor and facing each other; A passivation layer formed on the first input electrode and the first output electrode. More, The hemispherical auxiliary member is positioned between the first input electrode and the first output electrode and the passivation layer. OLED display. In claim 1, A first semiconductor formed on the substrate, A first control electrode overlapping the first semiconductor, A first input electrode and a first output electrode in contact with the first semiconductor and facing each other; A passivation layer formed on the first input electrode and the first output electrode and positioned below the translucent member. More, The hemispherical auxiliary member is located between the protective film and the translucent member. OLED display. In claim 5 or 6, A second output electrode connected to the first control electrode, A second input electrode facing the second output electrode, A second semiconductor in contact with the second output electrode and the second input electrode, A second control electrode overlapping the second semiconductor More, The first semiconductor comprises a crystalline semiconductor material, The second semiconductor includes an amorphous semiconductor material OLED display. In claim 1, The hemispherical auxiliary member is positioned between the first electrode and the light emitting member. In claim 1, The translucent member includes at least one selected from silver (Ag) and aluminum (Al).

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