KR20080048840A - Organic light emitting device and method for manufacturing the same - Google Patents

Abstract

An organic light emitting device and a method for manufacturing the same are provided to improve lifetime and reliability by protecting a thin film formed on a substrate. An organic light emitting device includes a substrate(250), a plurality of sub pixels, a separator(265), and a metallic protection film(285). The sub pixel includes a first electrode(255) positioned on the substrate, an organic light emitting layer(270) positioned on the first electrode, and a second electrode(275) positioned on the organic light emitting layer. The separator is positioned between the sub pixels and separates the sub pixels. The metallic protection film is positioned on the second electrode and covers the second electrode. The sub pixels are positioned on the substrate in a matrix type.

Description

Organic Light Emitting Device and Method for Manufacturing the same

1 is a plan view showing an electroluminescent device according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view of an organic light emitting display device according to an embodiment of the present invention, taken along line II ′ of FIG. 2.

Figure 3 is a flow chart of the manufacturing process of the organic light emitting device according to an embodiment of the present invention.

4 is a schematic view of a vacuum chamber for explaining a part of the manufacturing process of FIG.

<Explanation of symbols on main parts of the drawings>

200: driving substrate 205: buffer layer

215: gate insulating film 230: passivation film

210a: first power supply wiring 210b: gate electrode

210c: second power supply wiring 265c: first spacer

265d: second spacer 250: substrate

255: first electrode 260: pixel defining layer

265: partition 270: organic light emitting layer

275: second electrode 290: sealant

The present invention relates to an organic light emitting display device and a manufacturing method.

Recently, the importance of flat panel displays (FPDs) has increased with the development of multimedia. In response, a number of liquid crystal displays (LCDs), plasma display panels (PDPs), field emission displays (FEDs), organic light emitting devices (Organic Light Emitting Devices), etc. Branch-type flat panel displays have been put into practical use.

Among them, the organic light emitting display device used in the organic light emitting display device is a self-light emitting device having a light emitting layer formed between two electrodes, and voltage-driven N × M organic light emitting diodes (OLEDs) arranged in a matrix form. Alternatively, the image may be represented by current programming.

There are two methods for driving an organic light emitting display device: a passive matrix method and an active matrix method using a thin film transistor. The passive matrix method forms the anode and the cathode so as to be orthogonal and selects and drives the line, whereas the active matrix method connects the thin film transistor to each indium tin oxide (ITO) pixel electrode and is connected by a capacitor capacitance connected to the gate electrode of the thin film transistor. Drive according to the maintained voltage.

Conventionally, the partition wall is formed only in the passive matrix method, but recently, the partition wall is also formed in the active matrix method. The reason why the partition is formed is because there are many advantages in the manufacturing method.

The organic light emitting device is oxidized from the outside of an electrode (eg, aluminum) or an organic material (eg, an organic light emitting layer) exposed by outgassing by moisture, oxygen, or a thin film formed on a substrate, whether passive or active. It caused a problem of shortening the life of the device. This problem is particularly serious in the area around the bulkhead.

An object of the present invention for solving the above problems is to protect the thin film formed on the substrate to improve the lifetime and reliability of the organic light emitting device.

The present invention for solving the above problems, a substrate; Subpixels including a first electrode on the substrate, an organic emission layer on the first electrode, and a second electrode on the organic emission layer; Barrier ribs positioned between the subpixels to separate regions between the subpixels; And a metal passivation layer disposed on the second electrode and covering the second electrode, wherein the subpixels provide an organic light emitting diode disposed in a matrix form on the substrate.

The metal passivation layer is silver (Ag), and the metal passivation layer may cover both the outer side of the second electrode and the organic light emitting layer exposed to the outer side of the second electrode.

The driving substrate may be spaced apart from the substrate, and the driving transistor may include a driving transistor electrically connected to either the first electrode or the second electrode.

And a first connection electrode protruding from the driving substrate or the substrate, and either one of the first electrode and the second electrode may be connected to one end of the driving transistor by the first connection electrode.

The driving substrate includes signal wirings including a first power wiring, a second power wiring, a data wiring and a scan wiring, a switching transistor having a gate connected to the scan wiring, and a capacitor connected between the gate and one end of the driving transistor. The data line may be connected to one end of the switching transistor, and the gate of the driving transistor may be connected to the other end of the switching transistor.

And a second connection electrode protruding from the driving substrate or the substrate, and either one of the first electrode and the second electrode formed on the substrate may be electrically connected to the first power line by the second connection electrode.

On the other hand, in another aspect of the present invention, a first electrode is formed on a substrate, an insulating film having an opening is formed on the substrate to expose a portion of the first electrode, a partition wall is formed on the insulating film adjacent to the opening, Forming an organic light emitting layer in the opening, and forming a second electrode on the organic light emitting layer to include sub-pixels; And forming a metal passivation layer on the second electrode of the subpixel to cover the second electrode, wherein the subpixels are formed in a matrix form on the substrate, and the partition wall is positioned between the subpixels. A method of manufacturing an organic light emitting display device is provided so as to distinguish an area between subpixels.

The forming of the metal passivation layer may use a lower deposition angle than when forming the organic light emitting layer or the second electrode, and the deposition angle may be set to a target positioned between the vertical angle and the horizontal angle from the center point of the material located in the chamber. It may fall within the angle range.

In the forming of the metal passivation layer, the metal passivation layer may be formed to be adjacent to the lower wall of the partition wall.

The metal passivation layer is silver (Ag), and the metal passivation layer may cover both the outer side of the second electrode and the organic light emitting layer exposed to the outer side of the second electrode.

Forming a driving substrate spaced apart from the substrate, wherein the driving substrate has a gate connected to the signal wirings including the first power wiring, the second power wiring, the data wiring, and the scan wiring; A switching transistor connected to one end of the data wiring, a driving transistor having a gate connected to the other end of the switching transistor, and a capacitor connected between the gate and the other end of the driving transistor, wherein the first power line is connected to the organic light emitting layer, The power line may be connected to the other end of the driving transistor.

A first and second connection electrodes protruding from the driving substrate or the substrate, either one of the first electrode or the second electrode is electrically connected to one end of the driving transistor by the first connection electrode, and the other The second connection electrode may be electrically connected to the first power line.

<Example 1>

1 is a plan view illustrating an electroluminescent device according to an embodiment of the present invention.

Referring to FIG. 1, an electroluminescent device according to an exemplary embodiment of the present invention includes a scan driver 100, a data driver 110, a controller (not shown), a voltage supply unit (not shown), and a display unit 120. .

The controller (not shown) outputs a control signal to the scan driver 100, the data driver 110, and a power supply (not shown). The scan driver 100 outputs a scan signal to the display unit 120 through the scan wires 150 connected to the scan driver 100 according to a control signal of a controller (not shown).

The data driver 110 outputs data signals to the display unit 120 through the data wires 160 according to a control signal of a controller (not shown).

The power supply unit (not shown) outputs a current or voltage necessary for driving the display unit 120 through the first and second power supply wires 130 and 140. Meanwhile, the first and second power supply wires 130 and 140 may be routed differently from the illustrated drawings.

The display unit 120 may include a plurality of subpixels P, and regions of the subpixels P are defined by the intersection of the data lines 160 and the scan lines 150, which are in a matrix form. Is formed.

The subpixels P include at least one thin film transistor (generally including a switching thin film transistor and a driving thin film transistor (not shown)) and a capacitor (not shown), and include a first electrode 170 and an organic light emitting layer ( Organic light emitting diode (not shown) including a second electrode (not shown) and a second electrode (not shown).

FIG. 2 is a cross-sectional view of an organic light emitting display device according to an exemplary embodiment of the present invention, taken along line II ′ of FIG. 2.

Referring to FIG. 2, in the organic light emitting display device according to an exemplary embodiment, a buffer layer 205 is disposed on a driving substrate 200, and scan wiring (not shown) and a first power supply are disposed on the buffer layer 205. Signal wires including the wire 210a, the gate electrode 210b, and the second power wire 210c are positioned.

The gate insulating layer 215 including first and second via holes 235a and 235d exposing portions of the first power line 210a and the second power line 210c on the driving substrate 200 including the signal lines. This is located.

The semiconductor layer 220 is positioned on the gate insulating layer 215 such that the gate electrode 210b and a predetermined region correspond to each other, and drain electrodes and source electrodes 225b and 225c are positioned on the predetermined region of the semiconductor layer 220.

Accordingly, a switching thin film transistor for switching the scan signal and a driving transistor capable of driving the data signal introduced by the switching thin film transistor are formed on the driving substrate 200.

Although not shown, a capacitor (not shown) is included on the driving substrate 200, and the capacitor is electrically connected between the gate of the driving thin film transistor and the source or drain electrode.

As described above, the drain electrode and the source electrodes 225b and 225c may be selected by selecting the location of the drain electrode 225b which is one end and the source electrode 225c which is the other end thereof according to a method of forming a thin film transistor. See.

Meanwhile, a first metal electrode 225a connected to the first power line 210a is positioned on the gate insulating layer 215 through the first via hole 235a. The first metal electrode 225a may be made of the same material as the drain electrode and the source electrodes 225b and 225c.

The passivation layer 230 is positioned on the driving substrate 200 including the first metal electrode 225a, the drain electrode, and the source electrodes 225b and 225c. The passivation film 230 is formed to expose the first metal electrode 225a and the second via hole 235d. In the passivation layer 230, third and fourth via holes 235b and 235c exposing portions of the drain electrode 225b and the source electrode 225c are disposed.

In addition, a second metal electrode 240 is disposed on the source electrode 225c to electrically connect the source electrode 225c and the second power supply wiring 210c through the fourth via hole 235c and the second via hole 235d. .

The first electrode 255 is positioned on the substrate 250 facing the driving substrate 200. Here, the first electrode 255 may be an anode or a cathode.

The pixel defining layer 260 including the first contact hole 265a and the opening 265b exposing a portion of the first electrode 255 is disposed on the first electrode 255. Here, the pixel defining layer 260 defines an area of one sub pixel. That is, each subpixel is divided by the pixel definition layer 260.

On either side of the opening 265b of the pixel defining layer 260 and the adjacent pixel defining layer 260, a partition 265 is disposed between the pixel defining layer 260 and divides an area between subpixels. In addition, a first spacer 265c and a second spacer 265d are positioned on the other side of the pixel definition layer 260.

Here, the first contact hole 265a and the first spacer 265c are positioned on the non-light emitting area (generally, the area where the light emitting layer is not formed), and the opening 265b and the second spacer 265d emit light. It is located on an area (generally, an area in which a light emitting layer is formed). The first spacer 265c and the second spacer 265d are formed to protrude from the pixel definition layer 260.

The second electrode 275 is formed on the organic emission layer 270. The first connection electrode 280a connected to the first electrode 255 is formed on the first spacer 265c through the first contact hole 265a, and the second connection electrode 280b is formed on the second spacer 265d. Is formed.

The second connection electrode 280b is formed to be electrically connected to the second electrode 275, but does not separately form the second connection electrode 280b and forms the second electrode 275 with the upper portion of the second spacer 265d. Of course, it may be formed on the organic light emitting layer 270 at the same time. Here, the second electrode 275 may be an anode or a cathode. If the first electrode 255 is an anode, the second electrode 275 will be a cathode.

Meanwhile, according to the exemplary embodiment of the present invention, the metal protective film 285 is formed on the second electrode 275 to cover the second electrode 275. Here, the metal protective film 285 is formed of silver (Ag).

The metal passivation layer 285 is formed to cover the periphery of the second electrode 275 (the area adjacent to the barrier rib 275), and is exposed to the periphery of the second electrode 275 due to deposition tolerance during the deposition process. The organic light emitting layer 270 is formed to cover all of them.

In addition, the metal passivation layer 285 may be disposed on the first connection electrode 280a and the second connection electrode 280b where the first spacer 265c and the second spacer 265d are positioned, as well as on the upper portion of the second electrode 275. Can also be formed.

When the metal protective film 285 is formed of silver (Ag) as described above, it is exposed by moisture and oxygen penetrated from the outside and out gassing by a thin film or the like formed on the substrate 250 or the driving substrate 200. The problem of oxidizing from the outside of the second electrode 275 (for example, aluminum) or the organic light emitting layer 270 is solved.

Although not shown, a hole injection layer HIL and a hole transport layer HTL may be formed between the first electrode 255 and the organic emission layer 270, and the electron transport layer ETL may be formed on the organic emission layer 270. And an electron injection layer EIL.

The driving substrate 200 and the substrate 250 are bonded to each other by the sealant 290, and when the first and second connection electrodes 280a and 280b are bonded to each other, a first substrate positioned on the driving substrate 200, respectively. The metal electrode 225a and the drain electrode 225b are electrically connected to each other.

In the present invention, since the metal protective film 285 is also formed on the first connection electrode 280a and the second connection electrode 280b as an example, it is referred to be electrically connected by the metal protection film 285.

However, when the first connection electrode 280a and the second connection electrode 280b are electrically connected to the first metal electrode 225a and the drain electrode 225b positioned on the driving substrate 200, the first connection electrode 280a and the second connection electrode 280b may be connected to the metal passivation layer 285. If a contact resistance or the like is a concern, the metal protective film 285 is formed in the electrical contact portions {first connection electrode 280a and second connection electrode 280b} during the process of forming the metal protection film 285. Note that masking (masking using a mask, etc.) may be performed so as not to be prevented.

The organic light emitting diode having the structure as described above is manufactured by manufacturing the driving substrate 200 and the substrate 250 and bonding them to each other, so that the organic light emitting diode is driven using the protruding first and second spacers 265c and 265d. The thin film transistors on the substrate 200 and the electrodes on the substrate 250 are connected to each other.

<Production method>

3 is a flowchart of a manufacturing process of an organic light emitting display device according to an exemplary embodiment of the present invention, and FIG. 4 is a schematic diagram of a vacuum chamber for explaining a part of the manufacturing process of FIG. 3.

First, a first electrode is formed on a substrate, an insulating film having an opening is formed on the substrate to expose a portion of the first electrode, a partition is formed on the insulating film adjacent to the opening, an organic light emitting layer is formed in the opening, In operation S302, a second electrode is formed on the organic emission layer to include subpixels.

Here, reference is also made to FIG. 2 to aid in understanding the manufacturing process.

According to the substrate forming step S302, the first electrode 255 is formed on the substrate 250. Here, the first electrode 255 may be an anode or a cathode.

The pixel defining layer 260 including the first contact hole 265a and the opening 265b exposing a part of the first electrode 255 is formed on the first electrode 255. Here, the pixel defining layer 260 defines an area of one sub pixel. That is, each subpixel is divided by the pixel definition layer 260.

On either side of the opening 265b of the pixel defining layer 260 and the adjacent pixel defining layer 260, a partition 265 is formed between the pixel defining layer 260 and divides an area between subpixels. In addition, a first spacer 265c and a second spacer 265d are formed on the other side of the pixel definition layer 260.

Here, the first contact hole 265a and the first spacer 265c are positioned on the non-light emitting area (generally, the area where the light emitting layer is not formed), and the opening 265b and the second spacer 265d emit light. It is located on an area (generally, an area in which a light emitting layer is formed). In addition, the first spacer 265c and the second spacer 265d are formed to protrude on the pixel definition layer 260.

The second electrode 275 is formed on the organic emission layer 270. The first connection electrode 280a connected to the first electrode 255 is formed on the first spacer 265c through the first contact hole 265a, and the second connection electrode 280b is formed on the second spacer 265d. Is formed.

The second connection electrode 280b is formed to be electrically connected to the second electrode 275, but does not separately form the second connection electrode 280b and forms the second electrode 275 with the upper portion of the second spacer 265d. Of course, it may be formed on the organic light emitting layer 270 at the same time. Here, the second electrode 275 may be an anode or a cathode. If the first electrode 255 is an anode, the second electrode 275 will be a cathode.

Subsequently, a step (S304) of forming a metal passivation layer on the second electrode of the subpixel to cover the second electrode is performed, wherein the subpixels are formed to be positioned in a matrix form on the substrate, and the partition wall is the subpixel. It is formed between the two to distinguish the area between the sub-pixels.

According to the metal passivation film forming step S304, the metal passivation film 285 is formed on the second electrode 275 to cover the second electrode 275. Here, the metal protective film 285 is formed of silver (Ag).

The metal passivation layer 285 is formed to cover the periphery of the second electrode 275 (the area adjacent to the barrier rib 275), and is exposed to the periphery of the second electrode 275 due to deposition tolerance during the deposition process. The organic light emitting layer 270 is formed to cover all of them.

In addition, the metal passivation layer 285 may be disposed on the first connection electrode 280a and the second connection electrode 280b where the first spacer 265c and the second spacer 265d are positioned, as well as on the upper portion of the second electrode 275. Can also be formed.

When the metal protective film 285 is formed of silver (Ag) as described above, it is exposed by moisture and oxygen penetrated from the outside and out gassing by a thin film or the like formed on the substrate 250 or the driving substrate 200. The problem of oxidizing from the outside of the second electrode 275 (for example, aluminum) or the organic light emitting layer 270 is solved.

In addition, although not shown, a hole injection layer HIL and a hole transport layer HTL may be formed between the first electrode 255 and the organic light emitting layer 270, and the electron transport layer may be formed on the organic light emitting layer 270. ETL) and electron injection layer (EIL) can be formed.

Meanwhile, the forming of the metal passivation layer will be described in more detail with reference to the drawings of FIG. 4, and like reference numerals refer to like elements.

4 illustrates a method for forming a metal protective film 285 on the second electrode 275 in a vacuum chamber.

First, when the organic emission layer 270 and the second electrode 275 are formed in the opening 265b of the pixel definition layer 260 exposing the first electrode 255 formed on the substrate 250, the organic emission layer ( It is assumed that organic material is used as the material of 270 and aluminum is used as the material of the second electrode 275. For reference, the fixing means H for fixing the substrate 250 rotates. The first container S1 is a position where a material for forming the organic light emitting layer 270 and the second electrode 275 is placed, and the second container S2 is a material in which a material for forming the metal protective film 285 is placed. Location.

Here, the deposition angle of the organic material and aluminum sets the uniformity spec to maintain the uniformity of the film as the maximum angle Θ1. The deposition angle of the organics is influenced by the vertical angle (y) and the horizontal angle (x) and the nozzle size of the deposition vessel. The deposition angle of aluminum is affected by the vertical angle (y), the horizontal angle (x) and the degree of "wetting" depending on the size of the deposition vessel (commonly referred to as boat) and the type of material.

With reference to the above data, the silver (Ag) film to be used as the metal protective film 285 is deposited at a deposition angle Θ2 lower than that of the organic material and aluminum. Here, the deposition angle Θ2 is the angle between the target {the second electrode 275 and the organic light emitting layer 270} positioned between the vertical angle y and the horizontal angle x from the center point of the material located in the chamber. May correspond to a range.

That is, the deposition angle Θ2 of the metal protective film 285 is set to the lowest angle within the range separated by the partition wall 265. Here, the deposition angle Θ2 of the metal protective film 285 may also be adjusted by the vertical angle y and the horizontal angle x. This means that the metal protective film 285 can also be angle-adjusted according to the size and type of the deposition container.

The metal passivation layer 285 is formed to be adjacent to the lower wall of the partition wall 265 with reference to the deposition angle Θ2. In particular, the metal passivation layer 285 may cover both the outside of the second electrode 275 and the organic light emitting layer 270 exposed to the outside of the second electrode 275.

Thereafter, a step (S306) of forming a driving substrate facing away from the substrate is performed.

According to the driving substrate forming step S306, the buffer layer 205 is formed on the driving substrate 200, and the scan wiring (not shown), the first power wiring 210a, the gate electrode 210b, and the buffer layer 205 are formed on the driving substrate 200. Signal wires including the second power wire 210c are formed.

The gate insulating layer 215 including first and second via holes 235a and 235d exposing portions of the first power line 210a and the second power line 210c on the driving substrate 200 including the signal lines. Is formed.

The semiconductor layer 220 is formed on the gate insulating layer 215 so that the gate electrode 210b and a predetermined region correspond to each other, and drain and source electrodes 225b and 225c are formed on the predetermined region of the semiconductor layer 220.

Accordingly, a switching thin film transistor for switching the scan signal and a driving transistor capable of driving the data signal introduced by the switching thin film transistor are formed on the driving substrate 200.

Although not shown, a capacitor (not shown) is included on the driving substrate 200, and the capacitor is electrically connected between the gate of the driving thin film transistor and the source or drain electrode.

As described above, the drain electrode and the source electrodes 225b and 225c may be selected by selecting the location of the drain electrode 225b which is one end and the source electrode 225c which is the other end thereof according to a method of forming a thin film transistor. See.

Meanwhile, a first metal electrode 225a connected to the first power line 210a is positioned on the gate insulating layer 215 through the first via hole 235a. The first metal electrode 225a may be made of the same material as the drain electrode and the source electrodes 225b and 225c.

The passivation film 230 is formed on the driving substrate 200 including the first metal electrode 225a, the drain electrode, and the source electrodes 225b and 225c. The passivation film 230 is formed to expose the first metal electrode 225a and the second via hole 235d. In addition, third and fourth via holes 235b and 235c exposing portions of the drain electrode 225b and the source electrode 225c are formed in the passivation layer 230.

In addition, a second metal electrode 240 is formed on the source electrode 225c to electrically connect the source electrode 225c and the second power supply wiring 210c through the fourth via hole 235c and the second via hole 235d. do.

The substrate 250 and the driving substrate 200 of the organic light emitting diode according to the present invention are bonded by the sealant 290 as shown in FIG. 2, and the first connection electrode 280a and the second connection when the organic light emitting diode is bonded together. The electrode 280b is electrically connected to the first metal electrode 225a and the drain electrode 225b respectively positioned on the driving substrate 200.

In the present invention, since the metal protective film 285 is also formed on the first connection electrode 280a and the second connection electrode 280b as an example, it is referred to be electrically connected by the metal protection film 285.

However, when the first connection electrode 280a and the second connection electrode 280b are electrically connected to the first metal electrode 225a and the drain electrode 225b positioned on the driving substrate 200, the first connection electrode 280a and the second connection electrode 280b may be connected to the metal passivation layer 285. If a contact resistance or the like is a concern, the metal protective film 285 is formed in the electrical contact portions {first connection electrode 280a and second connection electrode 280b} during the process of forming the metal protection film 285. Note that masking (masking using a mask, etc.) may be performed so as not to be prevented.

The organic light emitting display device having the structure as described above is manufactured by manufacturing the driving substrate 200 and the substrate 250 and bonding them to each other, so that the organic light emitting diodes are driven using the protruding first and second spacers 275c and 275d. The thin film transistors on the substrate 200 and the electrodes on the substrate 250 are connected to each other.

The present invention has the effect of improving the life and reliability of the organic light emitting device by forming a metal protective film that can block the penetration path of moisture or oxygen to protect the thin film formed on the substrate.

Although the embodiments of the present invention have been described above with reference to the accompanying drawings, the technical configuration of the present invention described above may be modified in other specific forms by those skilled in the art to which the present invention pertains without changing its technical spirit or essential features. It will be appreciated that it may be practiced. Therefore, the embodiments described above are to be understood as illustrative and not restrictive in all aspects. In addition, the scope of the present invention is shown by the claims below, rather than the above detailed description. Also, it is to be construed that all changes or modifications derived from the meaning and scope of the claims and their equivalent concepts are included in the scope of the present invention.

As described above, the present invention protects the thin film formed on the substrate, thereby improving the lifespan and reliability of the organic light emitting display device.

Claims (12)

Board; Subpixels including a first electrode on the substrate, an organic emission layer on the first electrode, and a second electrode on the organic emission layer; Barrier ribs positioned between the subpixels to divide an area between the subpixels; And A metal passivation layer on the second electrode and covering the second electrode; The subpixels are disposed in the matrix form on the substrate. The method of claim 1, wherein the metal protective film, Silver (Ag), and the metal passivation layer covers all of the organic light emitting layer exposed to the outside of the second electrode and the outside of the second electrode. The method of claim 1, A driving substrate facing the substrate and spaced apart from each other, The organic light emitting device of claim 1, further comprising a driving transistor electrically connected to any one of the first electrode and the second electrode. The method of claim 3, A first connection electrode protruding from the driving substrate or the substrate, Any one of the first electrode and the second electrode is connected to one end of the driving transistor by the first connection electrode. The method of claim 4, wherein the driving substrate, Signal wirings including a first power wiring, a second power wiring, a data wiring and a scan wiring, a switching transistor having a gate connected to the scan wiring, and a capacitor connected between the gate and one end of the driving transistor The data line is connected to one end of the switching transistor, and the gate of the driving transistor is connected to the other end of the switching transistor. The method of claim 5, A second connection electrode protruding from the driving substrate or the substrate; Any one of the first electrode or the second electrode formed on the substrate is electrically connected to the first power line by the second connection electrode. A first electrode is formed on the substrate, an insulating film having an opening is formed on the substrate to expose a portion of the first electrode, a partition is formed on the insulating film adjacent to the opening, and an organic light emitting layer is formed in the opening. And forming a second electrode on the organic light emitting layer, the substrate forming step including subpixels; Forming a metal passivation layer on the second electrode of the subpixel to cover the second electrode; The sub-pixels are formed to be positioned in a matrix form on the substrate, and the partition wall is formed between the sub-pixels to form a region between the sub-pixels. The method of claim 7, wherein the metal protective film forming step, A lower deposition angle is used than when forming the organic light emitting layer or the second electrode, and the deposition angle corresponds to a range of angles with respect to a target positioned between a vertical angle and a horizontal angle from a center point of a material located in a chamber. A method of manufacturing an organic electroluminescent device. The method of claim 8, wherein the metal protective film forming step, The metal protective film is formed to be adjacent to the lower wall of the partition wall manufacturing method of the organic light emitting device. The method of claim 7, wherein the metal protective film, Silver (Ag), wherein the metal protective film covers the outer surface of the second electrode and the organic light emitting layer exposed to the outer surface of the second electrode. The method of claim 7, wherein Forming a driving substrate spaced apart from the substrate, The driving substrate may include signal wirings including a first power wiring, a second power wiring, a data wiring, and a scan wiring, a switching transistor having a gate connected to the scan wiring, and one end connected to the data wiring; A driving transistor having a gate connected to the other end of the transistor, and a capacitor connected between the gate and the other end of the driving transistor, And the first power line is connected to the organic light emitting layer, and the second power line is connected to the other end of the driving transistor. The method of claim 11, First and second connection electrodes protruding from the driving substrate or the substrate; One of the first electrode and the second electrode may be electrically connected to one end of the driving transistor by the first connection electrode, and the other may be electrically connected to the first power line by the second connection electrode. Method of manufacturing an electroluminescent device.

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