KR20080046960A - Electrophoretic display and method for manufacturing thereof - Google Patents

Abstract

An electro-phoretic display and a manufacturing method thereof are provided to express the color with high brightness and clearness, thereby enhancing the display performance. A TFT(Thin Film Transistor) display panel(100) includes a TFT. A pixel electrode is connected with the TFT electrically. A color filter is formed between an insulating substrate and the pixel electrode. A partition is formed on the pixel electrode and partitions the pixel electrodes. A common electrode display panel(200) is contacted closely on the partition and includes a common electrode. Electro-phoretic members(300,301) are arranged at the pixel areas encompassed by the pixel electrode, partition and common electrode. A light source member(400) irradiates the light beam toward the electro-phoretic members at the rear of the common electrode display panel. The pixel area includes the first and second pixel areas. The pixel electrode includes the first pixel electrode having an incision portion overlapped with a portion of the first pixel area. The second pixel electrode is overlapped with a portion of the second pixel area.

Description

Electrophoretic display and its manufacturing method {ELECTROPHORETIC DISPLAY AND METHOD FOR MANUFACTURING THEREOF}

  1 is a layout view illustrating a structure of an electrophoretic display device according to an exemplary embodiment of the present invention.

FIG. 2 is a cross-sectional view of the electrophoretic display of FIG. 1 taken along line II-II;

3 and 4 are cross-sectional views illustrating a method of displaying an image by an electrophoretic display device according to an exemplary embodiment of the present invention.

5, 7, 9, 11, 13, 15, 17, and 20 respectively illustrate an electrophoretic display device at an intermediate stage of a method of manufacturing an electrophoretic display device according to an exemplary embodiment of the present invention. It is the layout shown sequentially,

FIG. 6 is a cross-sectional view of the electrophoretic display of FIG. 5 taken along line VI-VI; FIG.

8 is a cross-sectional view of the electrophoretic display of FIG. 7 taken along the line VII-VII.

10 is a cross-sectional view of the electrophoretic display of FIG. 9 taken along the line VII-VII.

FIG. 12 is a cross-sectional view of the electrophoretic display of FIG. 11 taken along the line II-XIII;

FIG. 14 is a cross-sectional view of the electrophoretic display of FIG. 13 taken along a line XIV-XIV; FIG.

FIG. 16 is a cross-sectional view of the electrophoretic display of FIG. 15 taken along line VIVI-VI.

18 is a cross-sectional view of the electrophoretic display of FIG. 17 taken along the line VII-VII.

19 is a cross-sectional view of an electrophoretic display device according to a process subsequent to FIG. 18,

FIG. 21 is a cross-sectional view of the electrophoretic display of FIG. 20 taken along a line VI-XI; FIG.

22 is a layout view illustrating a structure of an electrophoretic display device according to another exemplary embodiment of the present invention; and

FIG. 23 is a cross-sectional view of the electrophoretic display of FIG. 22 taken along the line III-III III. FIG.

<Explanation of symbols for the main parts of the drawings>

100: thin film transistor display panel 110: insulating substrate

115: color filter insulating film 121: gate line

124: gate electrode 129: end of gate line

140: gate insulating film 151: linear semiconductor layer

161: linear ohmic contact 171: data line

173: source electrode 175: drain electrode

179: end of the data line 180: protective film

181, 182, and 185: contact hole 190: pixel electrode

192: cutout 195: pixel electrode insulating film

197: bulkhead

200: common electrode display panel 210: insulating substrate

270: common electrode 280: common electrode insulating film

300, 301: electrophoretic member 312: dispersion medium

314 and 316: electrophoretic particles 400: light source unit

The present invention relates to an electrophoretic display device and a manufacturing method thereof.

Recently, flat panel displays such as liquid crystal displays, organic light emitting diodes (OLEDs), and electrophoretic displays (ELECTROPHORETIC DISPLAYs) have been used in place of existing CRTs.

Among the electrophoretic displays, electrophoretic particles having a positive or negative charge according to voltages applied to the pixel electrode and the common electrode and having a predetermined color are moved to be disposed near the pixel electrode or the common electrode. As a result, the natural light incident on the electrophoretic display is reflected or absorbed by the electrophoretic particles to express the color of the electrophoretic particles to the outside to display a desired image.

As such, the electrophoretic display uses natural light to display an image, and thus the luminance is low. Therefore, the screen may not be clearly seen on a cloudy or dark day.

In addition, when the electrophoretic particles are composed of particles representing black and white, there is a problem in that display performance is deteriorated due to not being able to display color in addition to grayscale.

Accordingly, an object of the present invention is to solve the above problems and to provide an electrophoretic display device having high luminance and vivid color colors, and a method of manufacturing the same.

An electrophoretic display device according to the present invention includes a thin film transistor formed on an insulating substrate, a pixel electrode electrically connected to the thin film transistor, a color filter formed between the insulating substrate and the pixel electrode, and formed on the pixel electrode. And a thin film transistor array panel including a partition wall that separates the pixel electrodes, a common electrode panel on the partition wall, the common electrode display panel including a common electrode, and a pixel area surrounded by the pixel electrode, the partition wall, and the common electrode. And a light source unit for irradiating light toward the electrophoretic member from the rear of the common electrode display panel, wherein the pixel area includes a first pixel area and a second pixel area, and the pixel electrode includes: An incision is formed to overlap a part of the first pixel area. And a second pixel electrode formed to overlap the first pixel electrode and the second pixel region.

The cutout may be formed in a central portion of the second pixel electrode.

The electrophoretic member may include a dispersion medium and electrophoretic particles dispersed in the dispersion medium and having a charge amount.

The electrophoretic particles may include a first electrophoretic particle having a white color and a second electrophoretic particle having a charge amount having a polarity opposite to that of the first electrophoretic particle, the first electrophoretic particle having a black color, and in the first pixel region. Electrophoretic particles may be disposed, and the first electrophoretic particles and the second electrophoretic particles may be disposed in the second pixel area.

The color filter may be formed between the insulating substrate and the thin film transistor.

The display device may further include a color filter insulating layer formed between the color filter and the thin film transistor.

 The color filter may be formed between the thin film transistor and the pixel electrode.

The display device may further include a passivation layer formed between the color filter and the pixel electrode.

A contact hole exposing the thin film transistor and the pixel electrode may be formed in the color filter and the passivation layer, and the pixel electrode may be connected to the thin film transistor through the contact hole.

In addition, a method of manufacturing an electrophoretic display device according to the present invention may include forming a color filter on an insulating substrate, forming a thin film transistor on the color filter, forming a protective film on the thin film transistor, and forming the thin film on the protective film. Forming a pixel electrode connected to a transistor, forming a partition wall separating the pixel electrodes on the pixel electrode, and disposing an electrophoretic member in a pixel area on the pixel electrode exposed between the partition walls; Contacting a common electrode display panel on which the common electrode is formed on the partition wall, and disposing a light source unit on the common electrode display panel, wherein the pixel region includes a first pixel region and a second pixel region, A cutout is formed in the pixel electrode to overlap a portion of the first pixel area. And a second pixel electrode formed to overlap the first pixel electrode and the second pixel region.

Meanwhile, another method of manufacturing an electrophoretic display device according to the present invention includes forming a thin film transistor on an insulating substrate, forming a color filter on the thin film transistor, and a pixel electrode connected to the thin film transistor on the color filter. Forming a partition wall between the pixel electrodes on the pixel electrode, disposing an electrophoretic member in a pixel area on the pixel electrode exposed between the partition walls, and forming a common electrode on the partition wall. Contacting the formed common electrode display panel, and disposing a light source unit on the common electrode display panel, wherein the plurality of pixel areas includes a first pixel area and a second pixel area, and the pixel electrode includes: A first pixel electrode having a cutout formed to overlap a portion of the first pixel region; A second pixel electrode that is formed so as to overlap the second pixel group region.

The method may further include forming a color filter insulating layer on the color filter between forming a color filter on the insulating substrate and forming a thin film transistor on the color filter.

The method may further include forming a passivation layer on the color filter between forming a color filter on the thin film transistor and forming a pixel electrode connected to the thin film transistor on the color filter.

The cutout may be formed in a central portion of the second pixel electrode.

The electrophoretic member may include a dispersion medium and electrophoretic particles dispersed in the dispersion medium and having a charge amount.

The electrophoretic particles include a first electrophoretic particle having a white color and a second electrophoretic particle having an amount of charge opposite in polarity to the first electrophoretic particle, and the disposing of the electrophoretic member may include: Disposing the second electrophoretic particles dispersed in the dispersion medium in the pixel region, and disposing the first electrophoretic particles and the second electrophoretic particles dispersed in the dispersion medium in the second pixel region. can do.

DETAILED DESCRIPTION Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention.

In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. Like parts are designated by like reference numerals throughout the specification. When a part of a layer, film, region, plate, etc. is said to be "on" another part, this includes not only the other part being "right over" but also another part in the middle. On the contrary, when a part is "just above" another part, there is no other part in the middle.

Next, an electrophoretic display device and a manufacturing method thereof according to various embodiments of the present invention will be described with reference to the accompanying drawings.

First, an electrophoretic display device according to an exemplary embodiment of the present invention will be described in detail with reference to FIGS. 1 and 2.

 1 is a layout view illustrating a structure of an electrophoretic display device according to an exemplary embodiment, and FIG. 2 is a cross-sectional view of the electrophoretic display device of FIG. 1 taken along line II-II.

The electrophoretic display device according to the present exemplary embodiment includes the electrophoretic display panel and the common electrode display panel 200 including the thin film transistor array panel 100, the common electrode display panel 200 facing the same, and the electrophoretic members 300 and 301. It includes a light source unit 400 which is disposed at the rear of the.

First, the thin film transistor array panel 100 of the electrophoretic display panel will be described.

As shown in FIG. 1 and FIG. 2, a plurality of gate lines 121 are formed on the insulating substrate 110 made of transparent glass or the like. The gate line 121 extends in the horizontal direction, and each gate line 121 includes a plurality of gate electrodes 124 and a wide end portion 129 for connection with another layer or an external circuit. .

The gate line 121 may be formed of aluminum-based metal such as aluminum and aluminum alloy, silver-based metal such as silver and silver alloy, copper-based metal such as copper and copper alloy, molybdenum-based metal such as molybdenum and molybdenum alloy, chromium, titanium, It is preferably made of tantalum. The gate line 121 may include two layers having different physical properties, that is, a lower layer (not shown) and an upper layer (not shown) thereon. The upper layer is made of a metal having a low resistivity, for example, an aluminum-based metal such as aluminum (Al) or an aluminum alloy, so that the signal delay or voltage drop of the gate line 121 may be improved. In contrast, the lower layer is made of a material having excellent contact properties with other materials, particularly indium tin oxide (ITO) and indium zinc oxide (IZO), such as molybdenum (Mo), molybdenum alloy, chromium (Cr), and the like. An example of the combination of the lower layer and the upper layer is chromium / aluminum-neodymium (Nd) alloy.

The gate line 121 may have a single layer structure or may include three or more layers.

A gate insulating layer 140 made of silicon nitride (SiNx) is formed on the gate line 121.

A plurality of linear semiconductor layers 151 made of hydrogenated amorphous silicon or the like are formed on the gate insulating layer 140. The linear semiconductor layer 151 extends in the vertical direction and includes a plurality of protrusions 154 extending toward the gate electrode 124. Further, the linear semiconductor layer 151 increases in width near the point where the linear semiconductor layer 151 meets the gate line 121 to cover a large area of the gate line 121.

A plurality of linear and island ohmic contacts 161 and 165 formed of a material such as n + hydrogenated amorphous silicon doped with a high concentration of silicide or n-type impurities are formed on the semiconductor layer 151. It is. The linear contact member 161 has a plurality of protrusions 163, and the protrusions 163 and the island contact members 165 are paired and positioned on the protrusions 154 of the semiconductor layer 151.

A plurality of data lines 171 and a plurality of drain electrodes 175 are formed on the ohmic contacts 163 and 165 and the gate insulating layer 140, respectively.

The data line 171 extends in the vertical direction to cross the gate line 121 and transmit a data voltage. Each data line 171 includes a plurality of source electrodes 173 extending toward the gate electrode 124 and bent in a J-shape and a wide end portion 179 for connection with another layer or an external driving circuit. do. The pair of source and drain electrodes 173 and 175 are separated from each other and positioned opposite to the gate electrode 124.

The data line 171 and the drain electrode 175 are preferably made of a refractory metal such as chromium or molybdenum-based metal, tantalum, and titanium, and include a lower layer such as molybdenum (Mo), molybdenum alloy, and chromium (Cr). And an upper layer (not shown) that is an aluminum-based metal disposed thereon.

The gate electrode 124, the source electrode 173, and the drain electrode 175 together with the protrusion 154 of the semiconductor layer 151 form a thin film transistor (TFT), and the channel of the thin film transistor The protrusion 154 is formed between the source electrode 173 and the drain electrode 175.

The ohmic contacts 161 and 165 are present between the semiconductor layer 151 below and the source electrode 173 and the drain electrode 175 thereon, and serve to lower the contact resistance.

The linear semiconductor layer 151 has an exposed portion between the source electrode 173 and the drain electrode 175, and is not covered by the data line 171 and the drain electrode 175, and in most regions, the linear semiconductor layer ( Although the width of the 151 is smaller than the width of the data line 171, as described above, the width of the 151 increases to increase the insulation between the gate line 121 and the data line 171.

A red, green, and blue color filter (R, G) having a contact hole 185 exposing the drain electrode 175 on the thin film transistor and the gate insulating layer 140, and made of a photosensitive organic material including red, green, and blue pigments. , B) is formed. The red, green, and blue color filters R, G, and B are alternately formed in regions that completely include the first pixel region A1 or the second pixel region B2, respectively. The boundaries of the red, green, and blue color filters R, G, and B are shown to coincide with each other on the upper portion of the data line 171, but they overlap each other on the upper portion of the data line 171 and leak between the pixel areas A1 and A2. It may have a function of blocking light, and is not formed at the end portion 129 of the gate line 121 and the end portion 179 of the data line 171.

Although not shown, the linear semiconductor layer 151 exposed between the source electrode 173 and the drain electrode 175 of the thin film transistor is disposed between the thin film transistor and the color filters R, G, and B of red, green, and blue. An inorganic insulating film made of silicon nitride (SiNx) or silicon oxide (SiO ₂ ) is further used to prevent the protrusion 154 from being contaminated by the color filters R, G, and B of red, green, and blue made of a photosensitive organic material. It may be formed.

On the red, green, and blue color filters (R, G, and B), a-Si formed by plasma enhanced chemical vapor deposition (PECVD), an organic material having excellent planarization characteristics and photosensitivity: A passivation layer 180 made of a low dielectric constant insulating material such as C: O, a-Si: O: F, or silicon nitride (SiNx), which is an inorganic material, is formed.

The passivation layer 180 includes a plurality of contact holes 181 and 185 that expose the end portion 129 of the gate line 121, the drain electrode 175, and the end portion 179 of the data line 171, respectively. , 182 is formed.

A plurality of pixel electrodes 190 and a plurality of contact assistants 81 and 82 made of ITO or IZO are formed on the passivation layer 180.

The pixel electrode 190 is physically and electrically connected to the drain electrode 175 through the contact hole 185 to receive a data voltage from the drain electrode 175.

The pixel electrode 190 includes a first pixel electrode 190a overlapping a portion of the first pixel region A1 and a second pixel electrode 190b overlapping all of the second pixel region A2.

A cutout 192 exposing the passivation layer 180 is formed in the center portion of the first pixel electrode 190a. The cutout 192 overlaps the first pixel electrode 190a only with a circumference that is a part of the first pixel area A1. Meanwhile, unlike the present exemplary embodiment, the cutout 192 may be formed to be biased toward one side rather than the center of the first pixel electrode 190a. Accordingly, the first pixel electrode 190a may overlap a portion of the center portion of the first pixel area A1 and one side circumference. The shape of the cutout 192 may be modified into various shapes such as a rectangle and a circle.

The second pixel electrode 190b is formed on the passivation layer 180 to have a uniform thickness so as to overlap the entirety of the second pixel region A2.

The pixel electrode 190 to which the data voltage is applied is dispersed in the dispersion medium 312 by generating a potential difference together with the common electrode 270 of the common electrode display panel 200 to which the common voltage is applied. The positions of the migrating particles 314 and 316 are moved to the pixel electrode 190 or the common electrode 270, and thus the electrophoretic display device displays a desired color.

The contact auxiliary members 81 and 82 are connected to the end portion 129 of the gate line 121 and the end portion 179 of the data line 171 through the contact holes 181 and 182, respectively. The contact assistants 81 and 82 compensate for and protect the adhesion between the end portions 129 and 179 of the gate line 121 and the data line 171 and external devices such as a driving integrated circuit.

On the pixel electrode 190 and the passivation layer 180, the pixel electrode 190 and the electrophoretic particles 314 and 316 are insulated from each other, and the pixel electrode insulating layer 195 including at least one of an organic insulating material and an inorganic insulating material. Is formed.

On the pixel electrode insulating layer 195, a barrier rib 197 including at least one of an organic insulating material and an inorganic insulating material and separating the pixel electrodes 190 is formed. The partition wall 197 defines the pixel areas A1 and A2 in which the electrophoretic members 300 and 301 are disposed to surround the edge of the pixel electrode 190.

In the present exemplary embodiment, the pixel electrode insulating layer 195 and the partition wall 197 are formed separately, but may be formed through one photolithography process in the case of the same material.

The pixel area A includes a first pixel area A1 in which the first electrophoretic member 300 is disposed and a second pixel area A2 in which the second electrophoretic member 301 is disposed.

In the pixel region A, three consecutive first pixel regions A1 and three consecutive second pixel regions A2 are alternately provided.

One color filter of red, green, and blue color filters R, G, and B is sequentially disposed below each of the three consecutive first pixel areas A1. Further, one color filter among red, green, and blue color filters R, G, and B is sequentially disposed below each of the three consecutive second pixel areas A2.

The first electrophoretic member 300 includes a dispersion medium 312 and second electrophoretic particles 316 dispersed in the dispersion medium 312, and the second electrophoretic member 301 includes a dispersion medium 312 and a dispersion medium ( First electrophoretic particles 314 and second electrophoretic particles 316 dispersed in 312.

The first electrophoretic particles 314 are charged particles having a white color to reflect light and having negative (−) charges, and the second electrophoretic particles 316 are black to absorb light and absorb positive charges. Charged particles. However, unlike the present embodiment, the first electrophoretic particles 314 and the second electrophoretic particles may be formed of charged particles each having a positive charge and a negative charge.

On the other hand, the first electrophoretic member 300 may further include a dispersion medium 312 and the second electrophoretic particles 316 encapsulated (not shown), the second electrophoretic member 301 is a dispersion medium ( 312) and the first and second electrophoretic particles 314, 316 may further comprise a capsule (not shown).

Next, the common electrode display panel 200 disposed to face the thin film transistor array panel 100 will be described.

The common electrode display panel 200 is completely in contact with the partition wall 197 so that the dispersion medium 312 and the electrophoretic particles 314 and 316 do not leak to the outside.

The common electrode display panel 200 includes an insulating substrate 210, a common electrode 270, and a common electrode insulating layer 280 that are sequentially formed on the insulating substrate 210.

The common electrode 270 is a transparent electrode made of ITO or IZO and applies a common voltage to the electrophoretic particles 314 and 315.

The common electrode insulating layer 280 may protect at least one of an inorganic insulating material and an organic insulating material to protect the common electrode 270, to improve adhesion to the partition wall 197, and to insulate the electrophoretic particles 314 and 316. Include.

A backlight unit including a light source unit 400 for supplying artificial light to the electrophoretic display panel is coupled to the rear of the common electrode display panel 200.

The light source unit 400 generally includes a light source such as a cold cathode fluorescent lamp (CCFL), an LED (LED), an external electrode fluorescent lamp (EEFL), and a light control film for controlling the luminance of the light emitted from the light source to be uniform.

Hereinafter, a method in which the electrophoretic display according to the exemplary embodiment of the present invention displays high color and vivid color colors will be described in detail with reference to FIGS. 3 and 4. The driving of the electrophoretic particles 314 and 316 is performed by a potential difference formed between the pixel electrode 190 and the common electrode 270. For convenience of description, each electrode 190 or 270 has a polarity opposite to that of the electrodes 190 and 270. The case where a voltage is applied is demonstrated to an example.

3 and 4 are cross-sectional views illustrating a method of displaying an image by an electrophoretic display device according to an exemplary embodiment of the present invention.

First, a case in which a positive voltage is applied to each pixel electrode 190 and a negative voltage is applied to the common electrode 270 through the drain electrode 175 of the electrophoretic display device will be described.

In this case, the black second electrophoretic particles 316 of the first electrophoretic member 300 disposed in the first pixel region A1 are moved and arranged to the common electrode 270 to which a negative voltage is applied. . Therefore, the artificial light incident from the light source unit 400 through the common electrode display panel 200 to the first pixel region A1 and the natural light passing through the thin film transistor display panel 100 to the first pixel region A1 are both second. Absorbed by electrophoretic particles 316. Therefore, the first pixel area A1 displays black.

Meanwhile, the white first electrophoretic particles 314 of the second electrophoretic member 301 disposed in the second pixel region A2 move to the second pixel electrode 190b and are arranged, and the second electrophoretic particles are disposed. 316 moves to the common electrode 270 to be arranged. Therefore, the artificial light incident from the light source unit 400 through the common electrode display panel 200 to the second pixel region A2 is absorbed by the second electrophoretic particles 316, and the red filter of the thin film transistor array panel 100 ( Natural light incident through the R pixel and incident on the second pixel region A2 is reflected by the first electrophoretic particle 314, and then passes through the red filter R to the outside, and the second pixel region A2 is red. Will be displayed. In this case, three second pixel areas A2 are formed in succession, and the red filter R, the green filter G, and the blue filter B are disposed to correspond to each other, so that the remaining two second pixel areas A2 are disposed. Will represent green and blue, respectively. Therefore, it is possible to express various different color colors through their additive color mixing.

Next, a case in which a negative voltage is applied to each pixel electrode 190 and a positive voltage is applied to the common electrode 270 through the drain electrode 175 of the electrophoretic display device will be described.

In this case, the black second electrophoretic particles 316 of the first electrophoretic member 300 disposed in the first pixel region A1 are moved and arranged on the first pixel electrode 190a to which a negative voltage is applied. Done. At this time, the second electrophoretic particles 316 are not positioned on the cutout 192. Therefore, the artificial light that passes through the common electrode panel 200 from the light source unit 400 and enters the first pixel region A1 passes through the blue filter B and exits the outside of the thin film transistor array panel 100 and passes through the first pixel region ( A1) will display blue. Three first pixel regions A1 are formed in succession, and a red filter R, a green filter G, and a blue filter B are disposed to correspond to each other, so that the remaining two first pixel regions A1 are disposed. Red and green will be displayed respectively. Therefore, it is possible to express a variety of different color colors through their additive color mixture.

Meanwhile, the white first electrophoretic particles 314 of the second electrophoretic member 301 disposed in the second pixel region A2 move to the common electrode 270 to be arranged, and the second electrophoretic particles 316 are disposed. ) Moves to and arranges the second pixel electrode 190b. Therefore, the artificial light incident from the light source unit 400 through the common electrode display panel 200 to the second pixel region A2 is reflected by the first electrophoretic particle 314 to be incident back into the light source unit 400, and the thin film transistor array panel Natural light that has passed through the red filter R of 100 and is incident on the second pixel region A2 is absorbed by the second electrophoretic particle 316 so that the second pixel region A2 displays black.

Therefore, the first pixel area A1 and the second pixel area A2 are black and white by applying a voltage to each of the first pixel electrode 190a, the second pixel electrode 190b, and the common electrode 270. And various color colors.

In the electrophoretic display device according to the exemplary embodiment, the light source unit 400 is separately mounted to the rear of the common electrode display panel 200 of the electrophoretic display panel. Therefore, since the electrophoretic display uses both natural and artificial light to display an image, the electrophoretic display can display a clear image with high brightness, especially in a dark environment or at night, compared to a conventional electrophoretic display using only natural light. Meanwhile, power consumption may be reduced by driving the electrophoretic display without using the light source unit 400 in a very bright environment.

In addition, the red, green, and blue filters R, G, and B for expressing color colors are formed on the thin film transistor array panel 100 instead of the common electrode display panel 200 in a color filter on array (COA) structure. Accordingly, the electrophoretic display device according to the present exemplary embodiment may be easily aligned between the thin film transistor array panel 100 and the common electrode display panel 200, and thus may be easily manufactured and display images having a clear color color with a high aperture ratio.

Hereinafter, a method of manufacturing an electrophoretic display device according to an exemplary embodiment of the present invention will be described in detail with reference to FIGS. 1 and 2 and 5 to 21.

5, 7, 9, 11, 13, 15, 17, and 20 respectively illustrate an electrophoretic display device at an intermediate stage of a method of manufacturing an electrophoretic display device according to an exemplary embodiment of the present invention. 6 is a cross-sectional view of the electrophoretic display of FIG. 5 taken along line VI-VI, and FIG. 8 is a cross-sectional view of the electrophoretic display of FIG. 7 taken along the line VII-X. 10 is a cross-sectional view of the electrophoretic display of FIG. 9 taken along the line VII-VII, FIG. 12 is a cross-sectional view of the electrophoretic display of FIG. 11 taken along the line II-XII, and FIG. 14 is an electrophoresis of FIG. 16 is a cross-sectional view taken along line XIV-XIV of the display device, and FIG. 16 is a cross-sectional view taken along line XVI-XVI of the electrophoretic display device of FIG. 15, and FIG. 18 is a cross-sectional view of the electrophoretic display device of FIG. 19 is a cross-sectional view taken along the line. It is sectional drawing of the electrophoretic display apparatus, and FIG. 21 is sectional drawing cut along the XI-XI line of the electrophoretic display apparatus of FIG.

First, aluminum-based metals such as aluminum and aluminum alloys, silver-based metals such as silver and silver alloys, copper-based metals such as copper and copper alloys, molybdenum and molybdenum alloys on the insulating substrate 110 by sputtering or the like A conductive film made of molybdenum-based metal, chromium, titanium, tantalum, or the like is formed.

Subsequently, as illustrated in FIGS. 5 and 6, the plurality of gate lines 121 including the end portions 129 of the gate lines etched by the photolithography process to connect the gate electrodes 124 and the external circuits. To form.

Next, as shown in FIG. 7 and FIG. 8, the gate insulating layer 140 made of silicon nitride by LPCVD (low temperature chemical vapor deposition) or PECVE (plasma enhanced chemical vapor deposition) to cover the gate line 121. And a linear semiconductor layer 151 including a plurality of protrusions 154 and a plurality of resistive layers by sequentially stacking a hydrogenated amorphous silicon film and an N + -doped amorphous silicon film, and patterning a hydrogenated amorphous silicon film and an N + -doped amorphous silicon film. The contact pattern 164 is formed.

Next, a conductive film made of refractory metals such as chromium or molybdenum-based metals, tantalum and titanium is laminated by sputtering.

Subsequently, as illustrated in FIGS. 9 and 10, the conductive layer is etched by the photolithography process to etch the data line 171 and the plurality of drain electrodes 175 including the plurality of source electrodes 173 and the end portions 179 of the data lines. ).

Then, the portion of the ohmic contact pattern 164 that is not covered by the data line 171 and the drain electrode 175 is removed to separate the ohmic contact pattern 164 into two ohmic contact members 163 and 165. A portion of the semiconductor layer 154 in between is exposed. Subsequently, in order to stabilize the surface of the exposed semiconductor layer 154, it is preferable to perform oxygen plasma.

Next, as shown in FIGS. 11 and 12, the photosensitive organic materials including the pigments of red, green, and blue are sequentially applied, and the color filters R, G, and B of red, green, and blue are sequentially applied through a photographic process. A-Si: C: O, a-Si formed on the red, green, and blue color filters (R, G, and B) with excellent planarization characteristics, photosensitive organic materials, and plasma chemical vapor deposition (PECVD). A low dielectric constant insulating material, such as: O: F, or silicon nitride (SiNx), which is an inorganic material, is formed in a single layer or a plurality of layers to form a passivation layer 180.

13 and 14, after the photoresist is applied on the passivation layer 180, the photoresist is exposed to light through a photomask to form a photoresist pattern, and then a photolithography process using the photoresist pattern is performed. The passivation layer 180, the red, green, and blue color filters R, G, and B and the gate insulating layer 140 are patterned to form a plurality of contact holes 181, 185, and 182.

15 and 16, the first pixel electrode 190a and the second pixel electrode having ITO or IZO stacked on the passivation layer 180 by sputtering and having a cutout 192 by a photolithography process. The pixel electrode 190 including the 190b and the plurality of contact assistants 81 and 82 are formed.

Next, as shown in FIGS. 17 and 18, an organic insulating material and an inorganic insulating material for insulating between the pixel electrode 190 and the electrophoretic particles 314 and 316 on the pixel electrode 190 and the passivation layer 180. A pixel electrode insulating film 195 including at least one of the above is formed. Thereafter, a barrier material including at least one of an organic insulating material and an inorganic insulating material is formed, and a grid-shaped shape defining a pixel area A and separating pixel electrodes 190 through patterning through a photolithography process is formed. The partition 197 is formed.

However, unlike the present exemplary embodiment, the pixel electrode insulating layer 195 and the partition wall 197 may be simultaneously formed using a single photolithography process using the same material.

Thereafter, as shown in FIG. 19, the first electrophoretic member including the second electrophoretic particles 316 dispersed in the dispersion medium 312 in the first pixel region A1 using an inkjet method or the like ( The second electrophoretic member 301 including the first electrophoretic particles 314 and the second electrophoretic particles 316 dispersed in the dispersion medium 312 is disposed in the second pixel region A2. To place.

Then, as shown in FIGS. 21 and 22, the common electrode display panel 200 on which the common electrode 270 is formed is provided, and then the common electrode display panel 200 is bonded to the partition walls 197 of the thin film transistor array panel 100. Alternatively, the electrophoretic display panel may be completed by being in close contact with a sealant or the like.

Subsequently, when the backlight unit including the light source unit 400 is disposed behind the common electrode display panel 200, the electrophoretic display device according to the exemplary embodiment shown in FIGS. 1 and 2 is completed.

Hereinafter, an electrophoretic display device according to another exemplary embodiment of the present invention will be described with reference to FIGS. 22 and 23 based on differences from the electrophoretic display device according to an exemplary embodiment of the present invention. FIG. 22 is a layout view illustrating a structure of an electrophoretic display device according to another exemplary embodiment. FIG. 23 is a cross-sectional view of the electrophoretic display device of FIG. 22 taken along line III-III.

In the electrophoretic display device according to another exemplary embodiment of the present invention, as shown in FIGS. 22 and 23, the red, green, and blue filters R, G, and B included in the thin film transistor array panel 101 are thin film transistors. It is the same as the electrophoretic display device according to the exemplary embodiment of the present invention shown in FIGS. 1 and 2 except that the AOC (array on color filter) structure is formed on the bottom instead of the top.

That is, in the electrophoretic display device according to another exemplary embodiment, red, green, and blue filters (R, G, and B) and color filter insulating layers 115 may be formed on the insulating substrate 110 of the thin film transistor array panel 101. It is formed sequentially, and the thin film transistor is formed on it.

An electrophoretic display device according to another exemplary embodiment of the present invention may have the same effect as the electrophoretic display device according to an exemplary embodiment of the present invention.

Although the preferred embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improvements of those skilled in the art using the basic concepts of the present invention defined in the following claims are also provided. It belongs to the scope of rights.

As described above, according to the present invention, there is provided an electrophoretic display device having a high luminance, vivid color color representation, excellent display performance, and no alignment error, and a method of manufacturing the same.

Claims (16)

A thin film transistor formed on an insulating substrate, a pixel electrode electrically connected to the thin film transistor, a color filter formed between the insulating substrate and the pixel electrode, and formed on the pixel electrode to distinguish between the pixel electrodes. Thin film transistor array panel including barrier ribs, A common electrode display panel in close contact with the barrier rib and including a common electrode; An electrophoretic member disposed in the pixel region surrounded by the pixel electrode, the partition wall and the common electrode, and A light source unit irradiating light toward the electrophoretic member from the rear of the common electrode display panel; The pixel area includes a first pixel area and a second pixel area. The pixel electrode includes a first pixel electrode having a cutout formed to overlap a portion of the first pixel region, and a second pixel electrode formed to overlap the second pixel region. In claim 1, And the cutout is formed in a central portion of the second pixel electrode. In claim 1, The electrophoretic member includes a dispersion medium and electrophoretic particles dispersed in the dispersion medium and having electrostatic charges. In claim 3, The electrophoretic particles include a first electrophoretic particle having a white color and a second electrophoretic particle having a charge amount having a polarity opposite to that of the first electrophoretic particle having a black color, The second electrophoretic particles are disposed in the first pixel region. And the first electrophoretic particles and the second electrophoretic particles are disposed in the second pixel area. In claim 1, And the color filter is formed between the insulating substrate and the thin film transistor. In claim 5, And a color filter insulating film formed between the color filter and the thin film transistor. In claim 1, And the color filter is formed between the thin film transistor and the pixel electrode. In claim 6, And a passivation layer formed between the color filter and the pixel electrode. In claim 8, Contact holes exposing the thin film transistor and the pixel electrode are formed in the color filter and the passivation layer. And the pixel electrode is connected to the thin film transistor through the contact hole. Forming a color filter on the insulating substrate, Forming a thin film transistor on the color filter; Forming a passivation layer on the thin film transistor; Forming a pixel electrode connected to the thin film transistor on the passivation layer; Forming a partition wall on the pixel electrode to distinguish between the pixel electrodes; Disposing an electrophoretic member in a pixel region on the pixel electrode exposed between the partition walls; Contacting the common electrode display panel on which the common electrode is formed on the partition wall; and Disposing a light source unit on the common electrode display panel; The pixel area includes a first pixel area and a second pixel area. The pixel electrode includes a first pixel electrode having a cutout formed to overlap a portion of the first pixel region, and a second pixel electrode formed to overlap the second pixel region. Forming a thin film transistor on the insulating substrate, Forming a color filter on the thin film transistor, Forming a pixel electrode connected to the thin film transistor on the color filter; Forming a partition wall on the pixel electrode to distinguish between the pixel electrodes; Disposing an electrophoretic member in a pixel region on the pixel electrode exposed between the partition walls; Contacting a common electrode display panel on which the common electrode is formed on the partition wall; and Disposing a light source unit on the common electrode display panel; The pixel area includes a first pixel area and a second pixel area. The pixel electrode includes a first pixel electrode having a cutout formed to overlap a portion of the first pixel region, and a second pixel electrode formed to overlap the second pixel region. In claim 10, Between forming a color filter on the insulating substrate and forming a thin film transistor on the color filter And forming a color filter insulating layer on the color filter. In claim 11, Between forming a color filter on the thin film transistor and forming a pixel electrode connected to the thin film transistor on the color filter. And forming a passivation layer on the color filter. In claim 10 and 11, And wherein the cutout is formed in a central portion of the second pixel electrode. The method of claim 14, The electrophoretic member is a manufacturing method of an electrophoretic display device comprising a dispersion medium and electrophoretic particles dispersed in the dispersion medium and having a charge amount. The method of claim 15, The electrophoretic particles include white electrophoretic particles and second electrophoretic particles having an amount of charge opposite in polarity to the first electrophoretic particles, Arranging the electrophoretic member, Disposing the second electrophoretic particles dispersed in the dispersion medium in the first pixel region, and Disposing the first electrophoretic particles and the second electrophoretic particles dispersed in the dispersion medium in the second pixel area.

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