KR20080032481A - Plasma reactor having vacuum process chamber coupled with magnetic flux channel - Google Patents

Abstract

A plasma reactor having a substrate process chamber coupled with magnetic flux channel is provided to increase the transfer efficiency of inductance coupling energy by positioning a magnetic entrance surface of a magnetic core covering the entire hollow area of a chamber, thereby acquiring high density plasma. A magnetic core(30) includes an outlet and an inlet which are faced each other and have a gap for forming a magnetic flux channel(36). An induction coil(40) is coiled to a magnetic core, and forms the magnetic flux channel between the inlet and outlet by receiving AC power from a power source. A substrate processing chamber(10) is connected with the magnetic flux channel, and includes a hollow area in which the plasma discharge is to be generated. And the substrate processing chamber comprises a substrate entrance(14), a substrate support frame, a gas inlet(16) and a gas outlet(18).

Description

Plasma reactor with substrate processing chamber coupled to flux channel {PLASMA REACTOR HAVING VACUUM PROCESS CHAMBER COUPLED WITH MAGNETIC FLUX CHANNEL}

In order to more fully understand the drawings used in the detailed description of the invention, a brief description of each drawing is provided.

1 is a perspective view of a plasma reactor according to a first embodiment of the present invention.

2 is an exploded perspective view of the plasma reactor of FIG. 1.

3 is a cross-sectional view of the plasma reactor of FIG. 1.

4 is a perspective view of a plasma reactor in which the arrangement structure of the substrate entrance and exit is modified.

5 is a perspective view of a plasma reactor in which the substrate processing chamber is vertically modified.

6-9 illustrate various variations of a plasma reactor having two substrate processing chambers.

10 and 11 are a perspective view and a cross-sectional view of a plasma reactor according to a second embodiment of the present invention.

12 is a cross-sectional view of the plasma reactor modified to face the substrate support.

13 and 14 are perspective views of a magnetic core having a structure in which a magnetic flux entrance surface of the magnetic flux entrance and exit is multi-divided.

15 is a partial perspective view of a magnetic flux doorway showing an example of a method of winding an induction coil to the magnetic flux doorway.

* Description of the symbols for the main parts of the drawings *

10 substrate processing chamber 20 substrate to be processed

30: magnetic core 40: induction coil

The present invention relates to a plasma reactor for generating an active gas containing ions, free radicals, atoms and molecules by plasma discharge, and performing plasma treatment on an object to be treated such as solids, powders, and gases with the active gas. The present invention relates to a plasma reactor having a substrate processing chamber coupled to a magnetic flux channel.

Plasma discharges are used for gas excitation to generate active gases containing ions, free radicals, atoms, molecules. The active gas is widely used in various fields and is typically used in various semiconductor manufacturing processes such as etching, deposition, and cleaning.

In recent years, the size of a to-be-processed substrate, such as a silicon wafer substrate for manufacturing a semiconductor device, or a glass substrate for manufacturing a liquid crystal display, a plasma display, etc., has become larger. Therefore, there is a need for a plasma source that has high controllability for plasma ion energy and has a large area processing capability.

There are a number of plasma sources for generating plasma, such as capacitively coupled plasma using radio frequency and inductively coupled plasma. Among them, inductively coupled plasma sources are known to be suitable for obtaining high-density plasma because they can increase ion density relatively easily with increasing radio frequency power.

However, the inductively coupled plasma method uses a high voltage driving coil because the energy coupled to the plasma is lower than that of the supplied energy. Therefore, there is a problem that the ion energy is increased so that the inner surface of the plasma reactor may be damaged by ion bombardment. Damage to the internal surface of the plasma reactor by ion bombardment not only shortens the lifetime of the plasma reactor, but also has negative consequences of acting as a plasma treatment contaminant. When the ion energy is to be lowered, the energy coupled to the plasma may be low, thereby causing the plasma discharge to be turned off, thereby making it difficult to maintain the plasma stably.

Accordingly, the present invention improves the transfer efficiency of inductive coupling energy coupled to the plasma, stably maintains the plasma, stably obtains a uniform high-density plasma, and processes the substrate coupled to the magnetic flux channel that is easily expandable. It is an object of the present invention to provide a plasma reactor having a chamber.

One aspect of the present invention for achieving the above technical problem relates to a plasma reactor. The plasma reactor of the present invention comprises: a magnetic core having spacing opposing magnetic flux entrances to form a magnetic flux channel; An induction coil wound around a magnetic core and driven by receiving AC power from a power source to form a magnetic flux channel between magnetic flux entrances and exits; A substrate processing chamber coupled to a magnetic flux channel and having a hollow region in which plasma discharge is generated, wherein the substrate processing chamber comprises: a substrate entrance installed to one side; A substrate support for supporting a substrate to be processed in the hollow region; And a gas inlet and a gas outlet.

In one embodiment, the substrate support supports the substrate in either a horizontal or vertical state.

In one embodiment, it is installed in the hollow area opposite the substrate support, and comprises one or more gas distribution plate for evenly distributing the process gas input through the gas inlet to the substrate support.

In one embodiment, the magnetic core comprises: a first magnetic core having a first magnetic flux entrance defining a first magnetic flux channel; And a second magnetic core having a second magnetic flux entrance defining a second magnetic flux channel, the substrate processing chamber comprising: a first substrate processing chamber coupled to the first magnetic flux channel; And a second substrate processing chamber coupled to the second magnetic flux channel.

In one embodiment, the induction coil comprises: first and second induction coils wound independently of the first and second magnetic cores to form first and second magnetic flux channels.

In one embodiment, the induction coil comprises: a common induction coil commonly wound around the first and second magnetic cores to form first and second magnetic flux channels.

In one embodiment, the first and second magnetic cores have either a unitary structure or a structure independent of each other.

In one embodiment, the first and second substrate processing chambers each have their respective independent substrate entrances or have interconnected substrate entrances.

In one embodiment, the first and second substrate processing chambers have interconnected substrate entrances, and the substrate to be processed in the first substrate processing chamber is transferred to the second substrate processing chamber.

In one embodiment, the magnetic flux entrance of the magnetic core includes a structure in which two or more magnetic flux entrance surfaces are divided, and the induction coil is wound along a division groove of the divided magnetic flux entrance.

In one embodiment, the induction coil comprises: a first induction coil wound at one of the magnetic flux entrances of the magnetic flux entrance of the magnetic core and a second induction coil wound at the other magnetic flux entrance, and alternating from a power source And a power split supply unit configured to receive power and divide power into the first induction coil and the second induction coil in a phase difference.

According to another feature of the invention, a plasma reactor comprises: a magnetic core having a spaced opposite opposing magnetic flux entrance to form a magnetic flux channel; An induction coil wound around a magnetic core and driven by receiving AC power from a power source to form a magnetic flux channel between magnetic flux entrances and exits; And a substrate processing chamber coupled to the magnetic flux channel and having first and second hollow regions independent of each other from which plasma discharge is generated, wherein the substrate processing chamber comprises: a first substrate for entering and exiting the first to-be-processed substrate into the first hollow region; 1 substrate entrance; A second substrate entrance for entering and exiting the second to-be-processed substrate into the second hollow region; A first substrate support for supporting the first to-be-processed substrate in the first hollow region; And a second substrate support for supporting the second to-be-processed substrate in the second hollow region.

In one embodiment, the common gas supply unit for supplying a process gas to the first and second hollow region; A gas inlet connected to a common gas supply; A first and second gas outlets respectively connected to the first and second hollow areas, respectively installed in the first and second hollow areas opposite the first and second substrate supports, respectively; And at least one gas distribution plate for evenly distributing the input process gas and spraying it toward the substrate support.

In one embodiment, a first gas inlet and a first gas outlet connected to a first hollow region; A second gas inlet and a second gas inlet connected to the second hollow region, wherein the first and second gas inlets are configured to evenly distribute the process gas and to spray the first and second substrate supports, respectively. One or more gas distribution plates installed in the first and second hollow regions respectively opposite the first and second substrate supports.

In one embodiment, the magnetic flux entrance of the magnetic core includes a structure in which two or more magnetic flux entrance surfaces are divided, and the induction coil is wound along a division groove of the divided magnetic flux entrance.

In one embodiment, the induction coil comprises: a first induction coil wound at one of the magnetic flux entrances of the magnetic flux entrance of the magnetic core and a second induction coil wound at the other magnetic flux entrance, and alternating from a power source And a power split supply unit configured to receive power and supply the phase difference to the first induction coil and the second induction coil.

DETAILED DESCRIPTION In order to fully understand the present invention, the operational advantages of the present invention, and the objects achieved by the embodiments of the present invention, reference should be made to the accompanying drawings which illustrate preferred embodiments of the present invention and the contents described in the accompanying drawings. The embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be construed as being limited by the embodiments described below. This embodiment is provided to more completely explain the present invention to those skilled in the art. Accordingly, the shape of the elements in the drawings and the like are exaggerated to emphasize a clearer description. In understanding the drawings, it should be noted that like parts are intended to be represented by the same reference numerals as much as possible. And detailed description of known functions and configurations that are determined to unnecessarily obscure the subject matter of the present invention is omitted.

(Example)

Hereinafter, with reference to the accompanying drawings illustrating a preferred embodiment of the present invention, a plasma reactor having a substrate processing chamber coupled to the magnetic flux channel of the present invention will be described in detail.

1 is a perspective view of a plasma reactor according to a first embodiment of the present invention, Figure 2 is an exploded perspective view of the plasma reactor of FIG. 3 is a cross-sectional view of the plasma reactor of FIG.

1 to 3, a plasma reactor according to a first embodiment of the present invention includes a substrate processing chamber 10 for plasma processing of a substrate 20 to be processed. The substrate processing chamber 10 has a hollow region 11 in which plasma discharge is generated. One side of the substrate processing chamber 10 is provided with a substrate entrance 14 for entering and exiting the substrate 20, and a substrate support 13 for supporting the substrate 20 in the hollow region 11. Is provided at the bottom thereof. The substrate 20 to be processed is, for example, a silicon wafer substrate for producing a semiconductor device or a glass substrate for producing a liquid crystal display or a plasma display. The substrate processing chamber 30 is rebuilt from metal materials such as aluminum, stainless steel, and copper. Or coated metal, for example anodized aluminum or nickel plated aluminum. Or refractory metal. Alternatively, it is also possible to rewrite the substrate processing chamber 10 entirely with an electrically insulating material such as quartz, ceramic, or other materials suitable for carrying out the intended plasma process. If the substrate processing chamber 10 comprises a metal material, it is preferable to include one or more electrically insulating regions (not shown) to have electrical discontinuities in the metal material in order to minimize eddy currents. The substrate processing chamber 10 is installed between the two magnetic flux entrances 32 and 34 of the magnetic core 30 so as to be coupled to the magnetic flux channel 36 formed by the magnetic core 30.

The magnetic core 30 has a C-shaped structure with two magnetic flux entrances 32 and 34 spaced apart and facing each other to form the magnetic flux channel 36. The induction coil 40 is wound around the magnetic core 30, and the induction coil 40 is electrically connected to and driven by a power supply 44 that supplies AC power. Preferably, the magnetic flux entry surfaces 31, 33 of the magnetic flux entrances 32, 34 have the same or greater planar area than the top and bottom surfaces of the substrate processing chamber 10. The substrate 20 to be placed on the substrate support 13 is thus entirely received in the flux channel 36. In addition, the time-varying magnetic field and the electric field induced in the hollow region 11 by driving the induction coil 40 are uniformly distributed throughout the hollow region 11. Thus, a uniform high density plasma can be obtained over the entire hollow region 11.

The power supply 44 supplies a radio frequency to the induction coil 40 through the impedance matcher 42. However, the power supply 44 may be configured using a radio frequency power supply that can control the output voltage without a separate impedance matcher. The substrate support 13 is connected to and electrically biased through the impedance matcher 48 to a power supply 46 for supplying bias power. The power supply 46 may also be configured using a radio frequency power supply capable of controlling the output voltage without a separate impedance matcher. In this embodiment, the substrate support 13 has a single bias structure, but may be modified to a dual frequency bias structure that is biased by receiving radio frequencies of different frequencies.

The substrate processing chamber 10 has a gas inlet 16 and a gas outlet 18. For example, the gas inlet 16 and the gas outlet 18 may be installed at one upper end side and one lower end side of the fingerboard processing chamber 10 so that a gas flow is formed from the upper side to the lower side of the hollow region 11. One or more gas distribution plates 50 may be provided on top of the hollow region 11 opposite the substrate support 13 to form a more uniform gas flow. The process gas input through the gas inlet 16 is evenly distributed by the one or more gas distribution plates 50 and sprayed toward the substrate support 13. The gas supply and exhaust structure, consisting of a gas inlet 16, a gas outlet 18, and one or more gas distribution plates 50, forms a uniform gas flow in the hollow region 11 to achieve uniform generation of plasma. May be embodied in other forms. The process gas supplied to the substrate processing chamber 10 is selected from the group comprising an inert gas, a reactive gas, and a mixed gas of an inert gas and a reactive gas. In addition, other gases necessary for plasma processing the substrate 20 may be selected.

Although not specifically shown in the drawings, the plasma reactor includes a substrate processing chamber 10, a magnetic core 30, and a cooling system to prevent overheating of the induction coil 40.

Process gas from a gas source (not shown) is injected into the hollow region 11 through the gas inlet 16 and a radio frequency is supplied from the power source 44 to drive the induction coil 40 to the magnetic flux channel 30. According to the induced magnetic flux change, an AC potential that generates a plasma in the hollow region 11 of the substrate processing chamber 10 is induced to produce a plasma discharge. Since the magnetic flux entrance surfaces 31, 33 of the magnetic flux entrances 32 and 34 have the same or more planar areas as the upper and lower surfaces of the substrate processing chamber 30, the internal hollow region () of the substrate processing chamber 10 ( The time-varying magnetic field and the electric field induced in 11) are generated uniformly throughout the hollow region 11. Thus, high density uniform plasma is generated in the hollow region 11 as a whole, and uniform plasma processing of the substrate 20 is performed.

4 is a perspective view of a plasma reactor in which the arrangement structure of the substrate entrance and exit is modified, and FIG. 5 is a perspective view of a plasma reactor in which the substrate processing chamber is vertically modified.

Referring to FIG. 4, in the plasma reactor according to the present invention, when the bonding direction of the substrate processing chamber 10 and the magnetic core 30 is based on the substrate entrance and exit 14, the plasma reactor of the present invention is different from the aforementioned example (see FIG. 2). It can have a structure. As shown in FIG. 5, the plasma reactor of the present invention processes the substrate 20 in a vertical state inside the substrate processing chamber 10, and the substrate in the state in which the substrate 20 is vertical. The substrate processing chamber 10 and the magnetic core 30 may be vertically configured to enter and exit the processing chamber 10.

6-9 illustrate various variations of a plasma reactor having two substrate processing chambers.

As shown in FIG. 6 and FIG. 7, the plasma reactor includes two substrate processing chambers 10a and 10b and two magnetic cores 30a and 30b in parallel or stacked structure. The substrates 20a and 20b may be configured to be processed in parallel. Alternatively, as shown in FIG. 8, the magnetic core 30c having two pairs of magnetic flux entrances 36, 37, 38, and 39, which are bilaterally symmetrical structures, and the two magnetic flux entrances 36, 37, 38, and 39. The two substrate processing chambers 10a and 10b mounted on the substrate may be configured to parallelly process the two substrates 20a and 20b.

As described above, the plasma reactor of the present invention forms two or more magnetic flux channels by using one or more magnetic cores, and combines each of the magnetic flux channels with a substrate processing chamber to process two or more substrates in parallel. Various modifications are possible. At this time, the induction coil wound on one or more magnetic cores may be configured for each magnetic core independently (see FIGS. 6 and 7) corresponding to each magnetic flux channel, or one induction coil may be wound on two or more magnetic cores in common. can do. Alternatively, in the case of a magnetic core having two or more magnetic flux channels (see FIG. 8), one induction coil may be wound around the magnetic core to be shared by two or more magnetic flux channels.

As shown in FIG. 9, the plasma reactor of the present invention may be configured to connect two or more substrate processing chambers 10a and 10b and the magnetic cores 30a and 30b in series so that two processes are performed continuously. . The two substrate processing chambers 10a and 10b have substrate entrances 55 that are interconnected. The substrate processing chamber 10a at the front side has a substrate entrance 14a for loading the substrate 20 from the outside, and the substrate processing chamber 10b at the rear side has a substrate for unloading the processed substrate to the outside. A doorway (not shown in the figure) is provided. Thus, the first process proceeds in the substrate processing chamber 10a at the front end, and the second process proceeds in the substrate processing chamber 10b at the rear end. The first and second processes are different substrate processing processes. As such, two or more substrate processing chambers 10a and 10b may be configured in a structure arranged in series so as to continuously proceed the substrate processing process. Of course, a transfer means for transferring the substrate 20 to be processed between the continuous substrate processing chambers 10a and 10b should be provided.

10 and 11 are a perspective view and a cross-sectional view of a plasma reactor according to a second embodiment of the present invention. 12 is a cross-sectional view of the plasma reactor modified to face the substrate support.

10 and 11, the plasma reactor according to the second embodiment of the present invention basically has the same structure and configuration as the first embodiment described above. Therefore, repeated description of the same configuration is omitted. However, in the plasma reactor of the second embodiment, the substrate processing chamber 60 is separated into two independent first and second hollow regions 61a and 61b in order to simultaneously process two sheets of substrates 20a and 20b. First and second substrate entrances 64a, 64b opened into first and second hollow areas are provided.

The substrate processing chamber 60 is divided into first and second hollow regions 61a and 61b by a gas supply 62. The gas supply part 62 supplies the process gas injected through the gas inlet 66 to the first and second hollow regions 61a and 61b. The substrate processing chamber 60 has first and second gas outlets 68a and 68b connected to the first and second hollow regions 61a and 61b, respectively. Substrate supports 63a and 63b are respectively provided in the first and second hollow regions 61a and 61b. One or more gas distribution plates 50a and 50b are provided in the first and second hollow regions 61a and 61b opposite the first and second substrate supports 63a and 63b, respectively. The gas distribution plates 50a and 50b evenly distribute the process gas input through the gas inlet 66 and the gas supply part 62 and spray the gas toward the first and second substrate supports 63a and 63b.

The first and second substrate supports 63a, 63b are respectively installed in the first and second hollow regions 61a, 61b with side walls corresponding to the magnetic flux entrances 32, 34 of the magnetic core 30, respectively. Alternatively, as shown in FIG. 12, a partition wall 67 may be provided at a central portion of the substrate processing chamber 60 and may be installed to contact the partition wall 67. In this case, the respective gas inlets 66a and 66b are formed in the first and second hollow regions 61a and 61b, and the gas distribution plates 50a and 50b also have the first and second substrate supports 63a and 63b. Configure to face The first and second substrate supports 63a and 63b are electrically biased by receiving bias power from the power supply sources 44a and 44b through the impedance matchers 42a and 42b, respectively.

13 and 14 are perspective views of a magnetic core having a structure in which magnetic flux entrances and exits are multiplied.

13 and 14, the magnetic core 30 used in the plasma reactor of the present invention is configured such that the magnetic flux entrance surfaces 31 and 33 of the magnetic flux entrances 32 and 34 have two or more divided structures. Induction coil 40 is wound along split groove 80 of split magnetic flux entrances 32 and 34. The division structure of the magnetic flux entrances 32 and 34 may have four division structures as shown in FIG. 13 or 16 division structures as shown in FIG. 14.

15 is a partial perspective view of a magnetic flux doorway showing an example of a method of winding an induction coil to the magnetic flux doorway and a power supply structure;

Referring to FIG. 15, the induction coil 40 may be wound in a cross structure along the dividing grooves 80 of the magnetic flux entrances 32 and 34. At this time, the induction coil 40 may use a winding having a belt structure. Each of the induction coils 40 includes a first induction coil 40a wound around one magnetic flux entrance 32 and a second induction coil 40b wound around another magnetic flux entrance 34, respectively. And a power split supply unit 47 for separately supplying power supplied to the second induction coils 40a and 40b and having a phase difference. For example, the power split supplier 47 divides and supplies power with a phase difference of 180 degrees.

When a power supply having a phase difference and divided into the first and second induction coils 40a and 40b is supplied, the first and second induction coils 40a and 40b function as mutual capacitance coupling electrodes. Thus, plasma generation by inductive coupling and capacitive coupling occurs in the inner hollow region of the substrate processing chamber. Thus, a more uniform and higher density plasma can be obtained. At this time, since the capacitive coupling energy can be controlled by the control of the phase difference, the ion energy of the plasma generated in the hollow region of the substrate processing chamber can be controlled. This method is applicable to both the first and second embodiments and modifications thereof described above.

The embodiment of the plasma reactor having the substrate processing chamber coupled to the flux channel of the present invention described above is merely exemplary, and various modifications and equivalents may be made by those skilled in the art to which the present invention pertains. It will be appreciated that other embodiments are possible. Therefore, it is to be understood that the present invention is not limited to the specific forms mentioned in the above description. Therefore, the true technical protection scope of the present invention should be defined by the technical spirit of the appended claims, and the present invention is intended to cover all modifications, equivalents, and substitutes within the spirit and scope of the present invention as defined by the appended claims. It should be understood to include.

According to the plasma reactor having the substrate processing chamber coupled to the flux channel of the present invention as described above, the magnetic flux entry surface of the magnetic flux entrance and exit of the magnetic core is located throughout the hollow region of the substrate processing chamber, thereby generating the plasma generated in the hollow region. Has very high uniformity and low magnetic flux loss, resulting in high efficiency of inductive coupling energy transfer. Therefore, a uniform high density plasma can be obtained stably. In addition, in the structure having a capacitive coupling method, plasma ion energy can be easily adjusted by phase control. In addition, the structure of the overall plasma reactor has an easy structure capable of generating a large-area plasma, and its expandability is also excellent.

Claims (16)

A magnetic core having spaced and opposing magnetic flux entrances to form a magnetic flux channel; An induction coil wound around a magnetic core and driven by receiving AC power from a power source to form a magnetic flux channel between magnetic flux entrances and exits; A substrate processing chamber coupled to the flux channel and having a hollow region in which plasma discharge is generated, The substrate processing chamber includes: a substrate entrance installed to one side; A substrate support for supporting a substrate to be processed in the hollow region; And a gas inlet and a gas outlet. The plasma reactor of claim 1, wherein the substrate support supports the substrate in either a horizontal or vertical state. The plasma reactor of claim 1, further comprising at least one gas distribution plate disposed in the hollow area opposite the substrate support, and evenly distributing a process gas input through the gas inlet and spraying the process gas to the substrate support. The magnetic core device of claim 1, wherein the magnetic core comprises: a first magnetic core having a first magnetic flux entrance defining a first magnetic flux channel; And a second magnetic core having a second magnetic flux entrance to form a second magnetic flux channel; The substrate processing chamber comprises: a first substrate processing chamber coupled to a first magnetic flux channel; And a second substrate processing chamber coupled to the second magnetic flux channel. The plasma reactor of claim 4, wherein the induction coil comprises: first and second induction coils wound independently of the first and second magnetic cores to form first and second magnetic flux channels. 5. The plasma reactor of claim 4, wherein the induction coil comprises: a common induction coil commonly wound around the first and second magnetic cores to form first and second magnetic flux channels. The plasma reactor of claim 4, wherein the first and second magnetic cores have any one of a unitary structure or a structure independent from each other. 5. The plasma reactor of Claim 4, wherein said first and second substrate processing chambers each have their respective independent substrate entrances or have interconnected substrate entrances. The plasma reactor of claim 4, wherein the first and second substrate processing chambers have interconnected substrate exit inlets, and the substrate to be processed in the first substrate processing chamber is transferred to a second substrate processing chamber. The magnetic flux entrance of the magnetic core comprises a structure in which two or more magnetic flux entrance surfaces are divided, and the induction coil is wound along a dividing groove of the divided magnetic flux entrance. Plasma reactor. The coil of claim 1, wherein the induction coil comprises: a first induction coil wound around one of the magnetic flux entrances of the magnetic core and a second induction coil wound around the other magnetic flux entrance. Including, And a power split supply unit receiving AC power from a power source and dividing the power into a phase difference between the first induction coil and the second induction coil. A magnetic core having spaced and opposing magnetic flux entrances to form a magnetic flux channel; An induction coil wound around a magnetic core and driven by receiving AC power from a power source to form a magnetic flux channel between magnetic flux entrances and exits; And A substrate processing chamber coupled to the magnetic flux channel and having first and second hollow regions independent of each other, wherein a plasma discharge is generated; The substrate processing chamber includes: a first substrate entrance for entering and exiting a first substrate to be processed into a first hollow region; A second substrate entrance for entering and exiting the second to-be-processed substrate into the second hollow region; A first substrate support for supporting the first to-be-processed substrate in the first hollow region; And a second substrate support for supporting the second to-be-processed substrate in the second hollow region. 13. The apparatus of claim 12, further comprising: a common gas supply unit supplying a process gas to the first and second hollow regions; A gas inlet connected to a common gas supply; First and second gas outlets respectively connected to the first and second hollow regions, One or more gas distribution plates respectively installed in the first and second hollow regions facing the first and second substrate supports, respectively, and evenly distributing the process gas input through the gas inlet and spraying them toward the substrate support. Plasma reactor. 13. The apparatus of claim 12, further comprising: a first gas inlet and a first gas outlet connected to the first hollow region; A second gas inlet and a second gas outlet connected to the second hollow region, Installed in the first and second hollow regions opposite to the first and second substrate supports, respectively, so as to evenly distribute the process gas input through the first and second gas inlets and spray the first and second substrate supports, respectively. A plasma reactor comprising one or more gas distribution plates. The magnetic flux entrance of the magnetic core comprises a structure in which two or more magnetic flux entrance surfaces are divided, and the induction coil is wound along a dividing groove of the divided magnetic flux entrance. Plasma reactor. The coil of claim 12, wherein the induction coil comprises: a first induction coil wound around one of the magnetic flux entrances of the magnetic core and a second induction coil wound around the other magnetic flux entrance. Including, A plasma reactor including a power split supply unit for receiving AC power from a power supply source and supplies the first and second induction coils out of phase with each other.

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