KR20080029142A - Semiconductor package and method of producing the same - Google Patents

Abstract

A semiconductor package and a manufacturing method thereof are provided to increase a joint area of a solder and a semiconductor substrate by inserting the solder at a connection point between insulation support tapes. A semiconductor package includes first and second semiconductor substrates(100a,100b) and a soldering tape(200). The first semiconductor substrate includes a first external connection electrode(120a). The second semiconductor substrate includes a second external connection electrode(120b), which corresponds to the first external connection electrode. The soldering tape is applied between the first and second semiconductor substrates and has an insulation property. A solder(220) is inserted into a connection position between the first and second external connection electrodes.

Description

Semiconductor package and method of manufacturing the same {Semiconductor package and method of producing the same}

1 is an exploded side view of a semiconductor package according to an embodiment of the present invention.

2 is a side view of a semiconductor package according to an embodiment of the present invention.

3 is a perspective view of a soldering tape of a semiconductor package according to an embodiment of the present invention.

<Explanation of symbols for the main parts of the drawings>

100a: first semiconductor substrate 100b: second semiconductor substrate

110a and 110b: semiconductor elements 120a and 120b: external connection electrodes

130a, 130b: insulation layer 200: soldering tape

210: support tape 220: solder

230: adhesive layer 240: insertion hole

The present invention relates to a semiconductor package and a method of manufacturing the same, and more particularly, to a semiconductor package capable of exhibiting a higher resistance to stress applied externally or generated by itself due to an increase in the substantial bonding area between the solder and the semiconductor substrate, and It relates to a manufacturing method thereof.

In recent years, in response to light and short size reduction of electronic devices, miniaturization of semiconductor packages embedded in such electronic devices has been achieved. Such a semiconductor package may be directly mounted on a substrate, or the semiconductor packages may be stacked on each other. At this time, a bonding method using solder balls is widely used. With the miniaturization of semiconductor packages, the size of solder balls is also decreasing, which significantly reduces the bonding strength of solder joints. In addition, in the case of using the solder ball, the contact area between the solder ball and the electrode of the semiconductor package is very small compared to the diameter of the solder ball, and thus the bonding strength of the solder joint is very weak.

In addition, solder joint cracks are frequently caused by package warpage behavior in package-on-package (POP) or three-dimensional stack packages. In order to improve this, a method of using an underfill has been proposed, but when the underfill is used, underfill peeling may occur under the influence of flux residues, and the price of the underfill itself is limited and is used only for a special product.

In general, cracks in the solder joints grow around the interface between the substrate and the solder. In order to prevent this, it is necessary to first improve the solder joint strength. In addition, there is a need for an alternative means to enjoy the effect of joint improvement by underfill.

The first technical problem of the present invention is to provide a semiconductor package which has a higher resistance to stress applied to itself or generated externally by increasing the substantial junction area between the solder and the semiconductor substrate.

The second technical problem of the present invention is to provide a method of manufacturing a semiconductor package as described above.

The present invention to achieve the first technical problem, the first semiconductor substrate having an external connection electrode; A second semiconductor substrate having an external connection electrode corresponding to the external connection electrode of the first semiconductor substrate; And an insulating tape interposed between the first semiconductor substrate and the second semiconductor substrate, the solder being located at corresponding positions of the external connection electrodes of the first semiconductor substrate and the external connection electrodes of the second semiconductor substrate that are connected in correspondence with each other. It provides a semiconductor package comprising a soldering tape is inserted.

In this case, an adhesive layer may be further disposed between the soldering tape, the first semiconductor substrate, and the second semiconductor substrate at a portion other than a portion of the soldering tape in which the solder is inserted.

Also, optionally, the cross section of the solder in a direction parallel to the soldering tape may be circular or polygonal. At this time, the cross-sectional area of the solder may be constant even if the cross section of the solder is taken at any position along the thickness direction of the soldering tape.

In addition, the insulating support tape may be polyimide resin or polyethylene terephthalate resin.

According to another aspect of the present invention, there is provided a method of preparing a semiconductor device including: preparing a first semiconductor substrate having an external connection electrode; Preparing a second semiconductor substrate having an external connection electrode corresponding to the external connection electrode of the first semiconductor substrate; Preparing an insulating support tape; Forming insertion holes through which the solder can be inserted into positions of the insulating support tape corresponding to the external connection electrodes of the first semiconductor substrate and the external connection electrodes of the second semiconductor substrate that are connected to each other; Inserting solder into the insertion hole to form a soldering tape; And bonding a soldering tape in which solder is inserted into the insertion hole between the first semiconductor substrate and the second semiconductor substrate.

In particular, the forming of the insertion hole may be performed by punching or laser cutting.

At this time, the shape of the insertion hole may be circular or polygonal.

The method may further include forming an adhesive layer on both sides of the insulating support tape before forming the insertion hole in the insulating tape.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, embodiments of the present invention may be modified in many different forms, and the scope of the present invention should not be construed as being limited by the embodiments described below. Embodiments of the invention are preferably interpreted to be provided to more completely explain the present invention to those skilled in the art. Like numbers refer to like elements all the time. Furthermore, various elements and regions in the drawings are schematically drawn. Accordingly, the present invention is not limited by the relative size or spacing drawn in the accompanying drawings. When a layer is described as "on" another layer or semiconductor semiconductor chip, the layer may be present in direct contact with the other layer or semiconductor semiconductor chip, or a third layer therebetween. May be

1 is an exploded side view of a semiconductor package according to an embodiment of the present invention. As shown in Fig. 1, the present invention provides a semiconductor device comprising: a first semiconductor substrate 100a having an external connection electrode 120a; A second semiconductor substrate (100b) having an external connection electrode (120b) corresponding to the external connection electrode (120a) of the first semiconductor substrate (100a); And an insulating tape 210 interposed between the first semiconductor substrate 100a and the second semiconductor substrate 100b, the external connection electrode 120a of the first semiconductor substrate 100a connected to each other. And a soldering tape 200 in which solder 220 is inserted at a corresponding position of the external connection electrode 120b of the second semiconductor substrate 100b.

The first semiconductor substrate 100a and the second semiconductor substrate 100b respectively have external connection electrodes 120a and 120b to be connected to each other. These external connection electrodes 120a and 120b are electrically separated by the insulating layers 130a and 130b, and a method of preparing the first semiconductor substrate 100a and the second semiconductor substrate 100b is generally known in the art. Since the method can be used, the description thereof is omitted here.

The soldering tape 200 has solder 220 inserted in various places of the insulating support tape 210 and is interposed between the first semiconductor substrate 100a and the second semiconductor substrate 100b. The insertion position of the solder 220 corresponds to the positions of the external connection electrodes 120a and 120b to be connected to correspond to each other of the first semiconductor substrate 100a and the second semiconductor substrate 100b.

The insertion hole 240 into which the solder 220 is inserted has a predetermined shape and area along the thickness direction of the insulating support tape 210. Since the insertion hole 240 has a predetermined shape and area along the thickness direction of the support tape 210, the solder 220 inserted therein may also take a cross section at any position along the thickness direction of the support tape 210. It has a certain shape and area. The insertion hole 240 may have a circular or polygonal shape. Accordingly, the cross section of the solder 220 in a direction parallel to the soldering tape 200 may also be circular or polygonal. The polygon is preferably rectangular, triangular, hexagonal or the like because it is efficient for space utilization.

As described above, the semiconductor package of the present invention has a constant cross-sectional area of the solder along the thickness of the tape, so that the semiconductor package (more specifically, the external connection electrode) of the semiconductor package can be compared with the conventional solder having the same cross-sectional area at the center portion. The larger the cross-sectional area is and therefore better able to withstand stress from the outside.

The solder 220 inserted into the insertion hole 240 may use a conventional known solder material and is not particularly limited. The support tape 210 may be a tape that does not pass through electricity. For example, the support tape 210 may be a polyimide resin or a polyethylene terephthalate resin, but is not limited thereto. The insertion hole 240 may be formed by, for example, punching or laser cutting, but is not limited thereto.

Optionally, the adhesive layer 230 may be formed on both surfaces of the insulating support tape 210 before the insertion hole 240 is formed as described above.

The method of inserting the solder 220 into the insertion hole 240 may be performed after separately preparing the solder 220 suitable for the size of the insertion hole 240 and is not particularly limited.

The adhesive layer 230 is formed between the soldering tape 200 and the first semiconductor substrate 100a and the second semiconductor substrate 100b in a portion other than a portion where the solder 220 of the soldering tape 200 is inserted. There may be more). The adhesive layer 230 allows the soldering tape 200 to be more firmly attached to the first semiconductor substrate 100a and the second semiconductor substrate 100b, and furthermore, the first semiconductor substrate 100a and the first 2 semiconductor substrate 100b serves to firmly adhere to each other. In other words, by dispersing the stress received by the solder 220 serves to better withstand the external force.

2 is a side view of a semiconductor package according to an embodiment of the present invention. As shown in FIG. 2, the solder 220 is connected to the external connection electrodes 120a and 120b, and optionally, the adhesive layer 230 is insulated from the first semiconductor substrate 100a and the second semiconductor substrate 100b. Layers 130a, 130b.

3 is a perspective view of a soldering tape 200 according to an embodiment of the present invention. As shown in FIG. 3, the solder 220 protrudes slightly above the surface of the support tape 210. It is advantageous for bonding. The protrusion height of the solder 220 is preferably within 50 μm, but is not limited thereto.

Another aspect of the present invention is to prepare a first semiconductor substrate (100a) having an external connection electrode (120a); Preparing a second semiconductor substrate (100b) having an external connection electrode (120b) corresponding to the external connection electrode (120a) of the first semiconductor substrate (100a); Preparing an insulating support tape 210; At the position corresponding to the external connection electrode 120a of the said 1st semiconductor substrate 100a and the external connection electrode 120b of the 2nd semiconductor substrate 100b of the said insulating support tape 210 connected correspondingly to each other. Forming an insertion hole 240 into which the solder 220 may be inserted; Inserting solder 220 into the insertion hole 240 to form a soldering tape 200; And bonding the solder 220 between the first semiconductor substrate 100a and the second semiconductor substrate 100b through a soldering tape 200 inserted into the insertion hole 240. Provide a method.

Since each step of the method of manufacturing the semiconductor package has been described above, it is omitted here.

The method for bonding the first and second semiconductor substrates 100a and 100b through the insulating tape 200 inserted into the insertion hole 240 is not particularly limited, and various methods may be used. It is possible. For example, first, the insulating tape 200 is positioned to correspond to the first semiconductor substrate 100a, and then heat is applied so that the solder 220 is properly melted, and then the second semiconductor substrate 100b is placed thereon, followed by compression melting. Method can be used.

Although described in detail with respect to preferred embodiments of the present invention as described above, those of ordinary skill in the art, without departing from the spirit and scope of the invention as defined in the appended claims Various modifications may be made to the invention. Therefore, changes in the future embodiments of the present invention will not be able to escape the technology of the present invention.

By using the semiconductor package of the present invention and a method of manufacturing the same, there is an effect of increasing the substantial bonding area between the solder and the semiconductor substrate to exhibit a higher resistance to externally applied or self-induced stress.

Claims (9)

A first semiconductor substrate having an external connection electrode; A second semiconductor substrate having an external connection electrode corresponding to the external connection electrode of the first semiconductor substrate; And An insulating tape interposed between the first semiconductor substrate and the second semiconductor substrate, wherein solder is provided at corresponding positions of the external connection electrodes of the first semiconductor substrate and the external connection electrodes of the second semiconductor substrate, which are connected in correspondence with each other. Inserted soldering tape; Semiconductor package comprising a. The semiconductor package according to claim 1, further comprising an adhesive layer between the soldering tape, the first semiconductor substrate, and the second semiconductor substrate at a portion other than the soldered portion of the soldering tape. The semiconductor package according to claim 1, wherein a cross section of the solder in a direction parallel to the soldering tape is circular or polygonal. The semiconductor package according to claim 3, wherein a cross-sectional area of the solder is constant even when the cross-section of the solder is taken at any position along the thickness direction of the soldering tape. The semiconductor package according to claim 1, wherein the insulating support tape is a polyimide resin or a polyethylene terephthalate resin. Preparing a first semiconductor substrate having an external connection electrode; Preparing a second semiconductor substrate having an external connection electrode corresponding to the external connection electrode of the first semiconductor substrate; Preparing an insulating support tape; Forming insertion holes through which the solder can be inserted into positions of the insulating support tape corresponding to the external connection electrodes of the first semiconductor substrate and the external connection electrodes of the second semiconductor substrate that are connected to each other; Inserting solder into the insertion hole to form a soldering tape; And A method of manufacturing a semiconductor package comprising the step of bonding between the first semiconductor substrate and the second semiconductor substrate via a soldering tape inserted into the insertion hole. 7. The method of claim 6, wherein the forming of the insertion hole is performed by punching or laser cutting. The method of manufacturing a semiconductor package according to claim 6, wherein the insertion hole has a circular or polygonal shape. The method of claim 6, further comprising forming an adhesive layer on both sides of the insulating support tape before forming the insertion hole in the insulating tape.

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