KR20080024559A - 후열처리과정을 거친 탄소나노튜브 전극 및 이를 이용한염료감응형 태양전지 - Google Patents
후열처리과정을 거친 탄소나노튜브 전극 및 이를 이용한염료감응형 태양전지 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
Description
Claims (4)
- 기판과, 탄소나노튜브 및 결합제를 포함하여 이루어져 상기 기판 상측에 코팅되어 형성되는 탄소나노튜브막으로 구성된 탄소나노튜브 전극에 있어서,상기 탄소나노튜브막은 건조 후 후열처리과정을 거치되,상기 후열처리과정에서의 후열처리 온도는 상기 결합제의 탄화가 진행되는 온도 범위로부터 선택되는 것을 특징으로 하는 후열처리과정을 거친 탄소나노튜브 전극.
- 제 1항에 있어서, 상기 결합제는,카복실메틸셀룰로오즈(CMC)인 것을 특징으로 하는 후열처리과정을 거친 탄소나노튜브 전극.
- 제 2항에 있어서, 상기 후열처리과정은,후열처리 온도는 상기 결합제의 탄화가 시작되는 온도인 200~230℃에서부터 탄화가 끝나는 온도인 290~400℃까지이며,후열처리 시간은 0.1~5시간인 것을 특징으로 하는 후열처리과정을 거친 탄소나노튜브 전극.
- 상부 투명기판과, 상기 상부 투명기판의 내측 표면에 형성된 도전성 투명전 극과, 도전성 투명전극 위에 형성된 것으로 그 표면에는 염료가 흡착된 산화물반도체 다공질 음극전극과 하부 기판 위에 박막 또는 후막 형태로 형성된 것으로 상기 음극전극에 대응하는 양극부로서의 상대전극과, 상기 음극전극과 상대전극 사이에 충전된 전해질을 구비하는 염료감응형 태양전지에 있어서,상기 상대전극은, 제 1항 내지 제 3항에 있어서, 어느 한 항의 탄소나노튜브 전극으로 형성된 것을 특징으로 하는 염료감응형 태양전지.
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KR1020060088792A KR100835336B1 (ko) | 2006-09-14 | 2006-09-14 | 후열처리과정을 거친 탄소나노튜브 전극 및 이를 이용한염료감응형 태양전지 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101262019B (zh) * | 2008-03-26 | 2012-01-11 | 北京师范大学 | 硅纳米线光电化学太阳能电池 |
WO2014073790A1 (ko) * | 2012-11-12 | 2014-05-15 | 한국전기연구원 | 전도성 기판에 화학적으로 결합된 짧은 탄소나노튜브 투명 촉매전극 및 그 제조방법 |
KR101454401B1 (ko) * | 2012-11-12 | 2014-11-04 | 한국전기연구원 | 후열처리 산화법에 의해 제조된 탄소나노튜브 전극 및 그 제조방법 |
KR101498601B1 (ko) * | 2013-10-28 | 2015-03-05 | 부산대학교 산학협력단 | 고분자 분산제를 이용한 고-전기전도성 탄소나노튜브 투명전도성 필름의 제조방법 및 이에 따라 제조된 투명전도성 필름을 포함하는 투명전극 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100535343B1 (ko) * | 2004-03-25 | 2005-12-08 | 한국전기연구원 | 열전 전극을 이용한 염료감응형 태양전지 |
KR20050117265A (ko) * | 2004-06-10 | 2005-12-14 | 황호정 | 탄소나노튜브 위치제어 나노정보저장소자 구조 및 제작 공정 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101262019B (zh) * | 2008-03-26 | 2012-01-11 | 北京师范大学 | 硅纳米线光电化学太阳能电池 |
WO2014073790A1 (ko) * | 2012-11-12 | 2014-05-15 | 한국전기연구원 | 전도성 기판에 화학적으로 결합된 짧은 탄소나노튜브 투명 촉매전극 및 그 제조방법 |
KR101454391B1 (ko) * | 2012-11-12 | 2014-10-27 | 한국전기연구원 | 전도성 기판에 화학적으로 결합된 짧은 탄소나노튜브 투명 촉매전극 제조방법 |
KR101454401B1 (ko) * | 2012-11-12 | 2014-11-04 | 한국전기연구원 | 후열처리 산화법에 의해 제조된 탄소나노튜브 전극 및 그 제조방법 |
KR101498601B1 (ko) * | 2013-10-28 | 2015-03-05 | 부산대학교 산학협력단 | 고분자 분산제를 이용한 고-전기전도성 탄소나노튜브 투명전도성 필름의 제조방법 및 이에 따라 제조된 투명전도성 필름을 포함하는 투명전극 |
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