KR20080020720A - Apparatus and method for treating substrate - Google Patents

Abstract

An apparatus for processing a substrate is provided to prevent a preheating part from being corroded by chemicals by positioning the preheating part over a substrate. A support part(10) supports a substrate in a manner that the pattern surface of the substrate faces upward. A preheating part(20) preheats the substrate to a predetermined temperature. A dry process part(30) supplies plasma to the surface of the substrate to firstly remove photoresist on the substrate. A wet process part(40) supplies chemicals to the surface of the substrate to secondly remove the photoresist on the substrate. The preheating part can be disposed near the support part, including a heating unit(22) and a first transfer part(26). The heating unit discharges heat to the surface of the substrate loaded onto the support part. The first transfer part transfers the heating unit to a place over the surface of the substrate in a preheating process and transfers the preheating unit to make the heating unit get out of the place over the substrate when the preheating process is finished.

Description

Apparatus and method for treating substrate

1 is a view showing a substrate processing apparatus according to the present invention.

2 is a view showing a plasma supply unit according to the present invention.

3 is a view showing a state in which the first and second electrodes according to the present invention are connected to a power source, respectively.

4 and 5 are views showing the shape of the diffusion holes formed in the diffusion plate according to the present invention.

6A to 6E are views showing an operating state of the substrate processing apparatus according to the first embodiment of the present invention.

7 is a flowchart illustrating a substrate processing method according to the present invention.

<Description of Symbols for Main Parts of Drawings>

1 substrate processing apparatus 10 support portion

20: preheating unit 22: heating unit

24: first moving arm 26: first moving part

28: power supply 30: dry processing unit

40: wet processing unit 50: drying unit

60 container 70 controller

300: plasma supply unit

The present invention relates to an apparatus and method for processing a substrate, and more particularly, to an apparatus and method for processing a substrate using plasma.

In order to fabricate a semiconductor, a lithography process using a photoresist is necessarily involved. The photoresist is composed of a light-sensitive organic polymer or a mixture of a photosensitive agent and a polymer. After the exposure and dissolution process, a photoresist is formed on the substrate. The photoresist forms a pattern on the substrate in the process of etching the substrate or the films on the substrate. Transcribe. Such a polymer is called a photoresist, and a process of forming a fine pattern on a substrate using a light source is called a lithography process.

In the semiconductor manufacturing process, photoresists used as masks in the ion implantation process or forming various microcircuit patterns such as line or space patterns on a substrate are mainly ashed. It is removed from the substrate through an ashing process.

However, in the ion implantation process, the photoresist provided to prevent the implantation of ions into portions other than the desired region on the substrate is hardened during the ion implantation process, so that the photoresist is not easily removed. If the photoresist is not completely removed, the cured photoresist is conductive and may cause an electrical short between the circuit wirings formed on the substrate.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object of the present invention is to provide an apparatus and method for processing a substrate capable of removing the cured photoresist.

Another object of the present invention is to provide an apparatus and method for processing a substrate capable of removing the photoresist on the substrate while the substrate is loaded on the same support.

According to the present invention, an apparatus for removing a photoresist on an upper portion of a substrate includes a support portion for supporting the substrate so that the pattern surface of the substrate faces upward, a preheating portion for preheating the substrate to a predetermined temperature, and an upper portion of the substrate. And a dry processing unit for firstly removing the photoresist on the substrate by supplying plasma to the substrate, and a wet processing unit for secondaryly removing the photoresist on the substrate by supplying a chemical solution to the upper portion of the substrate.

The preheating part is disposed to be adjacent to the support part, a heating unit for dissipating heat on the upper part of the substrate loaded on the support part, and when the preheating is performed, the heating unit moves to the upper part of the substrate, and when the preheating is completed, It may include a first moving unit for moving away from.

The heating unit may include an infrared lamp.

The preheating unit may further include a temperature sensor installed at a lower portion of the substrate to control the temperature of the substrate, and a controller to control the heating unit according to the temperature detected by the temperature sensor.

The dry processing unit is disposed to be adjacent to the support unit, a plasma supply unit supplying plasma to an upper portion of the substrate loaded on the support unit, and move the plasma supply unit to an upper portion of the substrate during plasma supply and stop supply. And a second moving part moving away from the upper part of the substrate, wherein the wet processing part is disposed adjacent to the supporting part and supplies a chemical liquid to the upper part of the substrate loaded on the supporting part; The chemical liquid nozzle may include a third moving part moving to the upper part of the substrate and moving out of the upper part of the substrate when the supply is stopped.

According to the present invention, a method of removing a photoresist on a substrate includes loading the substrate on a support such that a patterned surface of the substrate faces upwards, and moving a heating unit to the top of the substrate to preheat the substrate. Moving the plasma supply unit to the upper portion of the substrate to generate plasma on the upper portion of the substrate, and first removing the photoresist on the substrate using the generated plasma; and removing the chemical liquid nozzle from the upper portion of the substrate. And supplying the chemical liquid to the upper portion of the substrate, and secondarily removing the photoresist on the substrate using the supplied chemical liquid.

The method includes the steps of: after removing the photoresist on the substrate secondly, moving the rinse nozzle to the upper portion of the substrate to supply the rinse liquid to the upper portion of the substrate and to rinse the substrate using the supplied rinse liquid; The method may further include moving a drying nozzle to an upper portion of the substrate, supplying a dry gas to the upper portion of the substrate, and drying the substrate using the supplied dry gas.

The method may be performed while the substrate is loaded on the support.

The photoresist may be provided on the substrate for an ion implantation process.

Hereinafter, exemplary embodiments of the present invention will be described in more detail with reference to FIGS. 1 to 14. Embodiment of the present invention may be modified in various forms, the scope of the present invention should not be construed as limited to the embodiments described below. This embodiment is provided to explain in detail the present invention to those skilled in the art. Accordingly, the shape of each element shown in the drawings may be exaggerated to emphasize a more clear description.

Hereinafter, the wafer W will be described as an example of the substrate, but the present invention is not limited thereto.

1 is a view showing a substrate processing apparatus 1 according to the present invention.

The substrate processing apparatus 1 includes a support 10, a preheater 20, a dry processor 30, a wet processor 40, and a dryer 50.

The support part 10 supports the wafer W so that the pattern surface of the wafer W faces upward. The support portion 10 includes a plate 12 and a support shaft 14 connected to the lower portion of the plate 12.

The plate 12 is in the shape of a disc, and the wafer W is loaded on top of the plate 12 to be generally parallel with the plate 12. The upper surface of the plate 12 is provided with a plurality of chucking pins (12a) and a plurality of support pins (12b). The chucking pins 12a are positioned at the edge of the plate 12 to support the side of the loaded wafer W, and the support pins 12b are positioned inside the chucking pins 12a to support the side of the loaded wafer W. Support the lower part.

A support shaft 14 is connected to the lower portion of the plate 12, and the support shaft 14 supports the plate 12. The support shaft 14 is rotated by the drive unit 16 described later.

The driving unit 16 is connected to the lower end of the support shaft 14. As described above, the driving unit 16 rotates the support shaft 14 by using a motor or the like. The plate 12 and the wafer W are rotated by the support shaft 14, and the plasma and the chemical liquid, which will be described later, can be uniformly supplied to the entire surface of the wafer W due to the rotation of the wafer W. .

In addition, the driver 16 may load the wafer W on the plate 12 or unload the wafer W from the plate 12, and in addition, when the process demands, the plate 12 may be removed. You can move up and down.

One side of the support 10 is provided with a preheating portion 20. The preheater 20 is used to preheat the wafer W loaded on the plate 12 to a constant temperature. In order to smoothly remove the photoresist on the wafer W, the wafer W should be preheated to a temperature of about 200-300 ° C, preferably about 250 ° C.

The preheating unit 20 includes a heating unit 22, a first moving arm 24, a first moving unit 26, and a power source 28.

The heating unit 22 includes an infrared lamp 22a, which converts electrical energy supplied from the power supply 28 into thermal energy. The converted heat is used to preheat the wafer (W).

The first moving arm 24 is connected to the upper portion of the heating unit 22. The second moving arm 32 has a 'c' shape, and the other end of the first moving arm 24 is connected to the first moving part 26. The first moving unit 26 may raise and lower the first moving arm 24 and may rotate the first moving arm 24. Accordingly, the heating unit 22 may be moved to the upper portion of the loaded wafer W by the rotation of the first moving arm 24, and the loaded wafer W and the heating may be heated by the lifting of the first moving arm 24. The distance of the unit 22 can be adjusted.

On the other hand, in the present embodiment has been described as emitting heat using the infrared lamp 22a, a heat source device such as an ultraviolet lamp (ultraviolet lamp) can be used in addition to the infrared lamp (22a).

In addition, the dry processing unit 30 is provided on one side of the support unit 10. The dry processing unit 30 processes the wafer W using plasma. The dry processing unit 30 includes a plasma supply unit 300 and a second moving arm 32 for moving the plasma supply unit 300. The plasma supply unit 300 will be described later.

One end of the second moving arm 32 is connected to the upper portion of the plasma supply unit 300. The second moving arm 32 has a 'c' shape, and the other end of the second moving arm 32 is connected to the second moving part 34. The second moving part 34 may lift the second moving arm 32 and rotate the second moving arm 32. Therefore, the plasma supply unit 300 may move to the upper portion of the loaded wafer W, and the distance between the plasma supply unit 300 and the wafer W may be adjusted by the lifting and lowering of the second moving arm 32.

The source gas line 36 is connected to the lower end of the second moving part 34. The source gas line 36 supplies the source gas to the inside of the housing 320 through the inside of the second moving part 34 and the second moving arm 32. The source gas line 36 is opened and closed by the source gas valve 38.

The other side of the support unit 10 is provided with a wet treatment unit 40. The wet processing unit 40 processes the wafer W using the chemical liquid. The wet treatment unit 40 includes a chemical liquid nozzle 42 and a chemical liquid nozzle moving arm 44.

The chemical liquid nozzle 42 sprays the chemical liquid with respect to the center of the wafer W on the plate 12. The chemical liquid nozzle 42 extends in parallel with the ground from the upper end of the chemical liquid nozzle moving arm 44, which will be described later, and extends downward at an end toward the center of the wafer W.

The chemical liquid nozzle moving arm 44 is perpendicular to the ground, and the chemical liquid nozzle 42 is connected to an upper end thereof. The chemical liquid nozzle moving unit 46 is connected to the lower end of the chemical liquid nozzle moving arm 44. The chemical liquid nozzle moving unit 46 may lift or rotate the chemical liquid nozzle moving arm 44.

The chemical liquid line 48 is connected to the lower end of the chemical liquid nozzle moving unit 46. The chemical liquid line 48 supplies the chemical liquid to the chemical liquid nozzle 42 through the interior of the chemical liquid nozzle moving unit 46 and the chemical liquid nozzle moving arm 44, and the supplied chemical liquid is supplied to the wafer W through the chemical liquid nozzle 42. Sprayed onto the bed. The chemical liquid line 48 is opened and closed by a valve 48a provided on the chemical liquid line 48.

The other side of the support unit 10 is provided with a drying unit (50). The drying unit 50 dries the wafer W using a drying gas. The drying unit 50 includes a drying nozzle 52 and a drying nozzle moving arm 54.

The drying nozzle 52 injects a drying gas with respect to the center of the wafer W on the plate 12. The drying nozzle 52 extends in parallel with the ground from the upper end of the drying nozzle moving arm 54, which will be described later, and extends downward at an end toward the center of the wafer W.

The drying nozzle moving arm 54 is perpendicular to the ground, and the drying nozzle 52 is connected to an upper end thereof. The dry nozzle moving part 56 is connected to the lower end of the drying nozzle moving arm 54. The dry nozzle moving unit 56 may lift or rotate the dry nozzle moving arm 54.

The dry gas line 58 is connected to the lower end of the drying nozzle moving part 56. The dry gas line 58 supplies a dry gas to the drying nozzle 52 through the drying nozzle moving part 56 and the drying nozzle moving arm 54, and the supplied dry gas is supplied through the drying nozzle 52. Is sprayed onto the wafer (W). The dry gas line 58 is opened and closed by a valve 58a provided on the dry gas line 58.

On the other hand, the substrate processing apparatus 1 further includes a container 60 and a controller 70.

The container 60 is installed to surround the plate 12 on the support shaft 14. The container 60 prevents the chemical liquid on the wafer W from scattering to the outside due to the rotating plate 12 during the process. The container 60 consists of a portion extending parallel to the ground, a portion extending vertically from the end, and a portion extending obliquely upward from the top. The upwardly inclined portion is located at a height corresponding to the wafer W on the plate 12, and the chemical liquids scattered from the wafer W flow downward through the inner wall of the upwardly inclined portion.

The controller 70 controls the aforementioned power source 28 according to the temperature of the wafer W sensed through the sensor 72. The sensor 72 is installed under the wafer W loaded on the plate 12 and senses the temperature of the wafer W. In order to accurately sense the temperature of the wafer W, a plurality of sensors 72 may be installed, and an average value of the temperatures detected by the plurality of sensors 72 may be used.

The temperature sensed by the sensor 72 is converted into a signal by the sensor 72 and transmitted to the controller 72. The controller 72 receives the sensor 72 to determine the temperature of the wafer W, and controls the power source 28 according to the determined temperature. When the temperature is within the preset temperature, the power supply 28 is continuously turned on, and when the temperature is higher than the preset temperature, the power supply 28 is turned off.

In the present exemplary embodiment, the controller 70 controls the sensor 72 and the power supply 28. In addition, the controller 70 controls the dry processing unit 30, the wet processing unit 40, and the drying unit 50. Can be controlled.

2 is a view showing a plasma supply unit 300 according to the present invention.

The plasma supply unit 300 includes a housing 320 and a plurality of first electrodes 360 and second electrodes 370 accommodated in the housing 320.

The housing 320 includes a top wall provided to face the plate 12 and a side wall extending downwardly substantially perpendicularly from the top wall, the housing 320 having a width that substantially matches the diameter of the wafer W, and includes a first wall. It has a length that generally matches the length of the electrode 360. Therefore, the housing 320 has a rectangular parallelepiped shape with an opening formed at the bottom thereof, and a space is formed inside the housing 320. The plurality of first electrodes 360 described later are accommodated on the opening. A diffusion plate 340 is installed in the space located above the first electrodes 360 to diffuse the source gas toward the first electrodes 360. The space in the housing 320 is divided into an upper buffer 323 and a lower buffer 324 by the diffusion plate 340.

The first and second electrodes 360 and 370 are installed at the same height on the opening of the housing 320. As described above, the first and second electrodes 360 and 370 generate plasma on top of the loaded wafer W. As shown in FIG. The plasma is generated from the source gas supplied through the source gas line 36, and the generated plasma is used to process the wafer W.

As shown in FIG. 2, the first and second electrodes 360 and 370 are generally parallel to the wafer W and are spaced apart from each other. A passage 365 is formed between the first and second electrodes 360 and 370, and the source gas diffused from the upper buffer 323 to the lower buffer 324 through the diffusion plate 340 described later is a passage ( 365 is sprayed on top of the loaded wafer (W).

3 is a view showing a state in which the first and second electrodes 360 and 370 according to the present invention are connected to a power source, respectively.

As shown in FIG. 3, the first and second electrodes 360 and 370 have a rod shape having a long length in the first direction I, and have a second direction perpendicular to the first direction I. Ⅱ) side by side to be spaced apart from each other.

The first electrode 360 includes a rod-shaped metal electrode 362 and a dielectric 364 surrounding the metal electrode 362. The dielectric 364 surrounding the metal electrode 362 is formed of a plasma. The arc generated during generation prevents the metal electrode 362 from being damaged. Similarly, the second electrode 370 includes a rod-shaped metal electrode 372 and a dielectric 374. Quartz or ceramic is used as the dielectrics 364 and 374.

In this embodiment, the metal electrode 362 generally has a length that is substantially coincident with the diameter of the wafer W or is larger than the diameter of the wafer W, and the longitudinal cross section is circular. However, the longitudinal section of the metal electrode 362 may be a triangular or quadrangular polygon.

The first electrode 360 and the second electrode 370 are alternately arranged in parallel with each other, a first voltage is applied to the first electrodes 360, and a second voltage is applied to the second electrodes 370. do. In this case, the second voltage applies a voltage lower than the first voltage to form an electric field between the first electrode 360 and the second electrode 370. As will be described later, when the source gas is supplied between the first electrode 360 and the second electrode 370, plasma is generated by the electric field.

In addition, the first and second voltages are applied in parallel to the first and second electrodes 360 and 370, respectively. Therefore, even if any one of the first electrodes 360 is disconnected, a normal voltage may be applied to the remaining first electrodes 360, and even if one of the second electrodes 370 is disconnected, the remaining second electrodes 370 may be disconnected. Field may be applied with a normal voltage. In addition, the disconnected first electrode 360 or the second electrode 370 may be partially replaced. In the present embodiment, a medium frequency (MF) power source 350 is used. However, unlike the present embodiment, a high frequency power source may be used.

Meanwhile, the source gas is supplied to the upper portions of the first and second electrodes 360 and 370 through the source gas line 36. The source gas line 36 is connected to a supply hole 322 formed at an upper portion of the housing 320, and the source gas in the source gas line 36 is supplied to the upper buffer 323 through the supply hole 322. . As the source gas supplied through the source gas line 36, various gases may be used depending on the type of plasma desired.

As described above, the diffusion plate 340 partitions the inside of the housing 320 into an upper buffer 323 and a lower buffer 324. The upper buffer 323 provides a space in which the source gas introduced through the source gas line 36 and the supply hole 322 may be diffused.

A plurality of diffusion holes 342 are formed on the diffusion plate 340. As shown in FIG. 2, the diffusion holes 342 are formed to correspond to the passage 365 formed between the first electrodes 360. Therefore, the source gas provided on the first electrodes 360 through the diffusion holes 342 is provided toward the passages 365 formed between the first electrodes 360.

4 and 5 are views showing the shapes of the diffusion holes 342 formed in the diffusion plate 340 according to the present invention.

As shown in FIG. 4, the diffusion holes 342 may have a slit shape parallel to the first and second electrodes 360 and 370. However, as described above, the spacing between the slit-shaped diffusion holes 342 should correspond to the passages 365.

As shown in FIG. 5, the diffusion holes 342 may have a hole shape disposed in parallel with the first and second electrodes 360 and 370. The spacing between the holes is not a problem, but should correspond to the passages 365 as described above.

6A to 6D are views showing an operating state of the substrate processing apparatus 1 according to the present invention. 7 is a flowchart illustrating a substrate processing method according to the present invention. Hereinafter, a method of operating the substrate processing apparatus 1 will be described with reference to FIGS. 6A to 7.

First, as shown in FIG. 6A, the wafer W is loaded onto the plate 12 (S10). The loaded wafer W is supported by the support pin 122 and the chucking pin 124, and rotates together with the plate 12 by the rotation of the support shaft 14 in the supported state.

Next, as illustrated in FIG. 6B, the wafer W loaded on the plate 12 is preheated to a predetermined temperature using the preheater 20 (S20). The controller 70 drives the first moving part 26 to rotate the first moving arm 24, and moves the heating unit 22 to the upper portion of the wafer W by the rotation of the first moving arm 24. . When the heating unit 22 is positioned above the wafer W, the first moving arm 24 is lifted to adjust the distance between the heating unit 22 and the wafer W. FIG.

When the heating unit 22 is placed in a desired position, the controller 70 operates the power supply 28 to supply electrical energy to the infrared lamp 22a, and the infrared lamp 22a converts the electrical energy into thermal energy to the wafer. Supply to (W). Thus, the wafer W is preheated by the infrared lamp 22a.

Meanwhile, the sensor 72 positioned below the wafer W senses the temperature of the wafer W, converts the detected temperature into a signal, and sends it to the controller 70. The controller 70 operates the power supply 28 until the wafer W reaches a certain temperature, and stops operating the power supply 28 when the predetermined temperature is reached. As described above, the wafer W is preheated to a temperature of about 200-300 ° C, preferably about 250 ° C.

When the preheating is completed, the controller 70 drives the first moving part 26 to lift and rotate the first moving arm 24, and the heating unit 22 is rotated by the rotation of the first moving arm 24. Return to position

Next, as shown in FIG. 6C, the photoresist on the wafer W is first removed using the dry processing unit 30. That is, plasma is generated using the plasma supply unit 300, and the generated plasma is supplied onto the wafer W to first remove the photoresist on the wafer W (S30).

At this time, the plasma supply unit 300 moves to the upper portion of the wafer W by the second moving part 34. As shown in FIG. 6C, the second moving unit 34 rotates the second moving arm 32 to move the plasma supply unit 300 to the upper portion of the wafer W, and then moves the second moving arm 32 to the upper portion of the wafer W. FIG. By lowering the distance between the wafer (W) and the plasma supply unit 300 is adjusted.

The removal process of the photoresist will be briefly described as follows. As mentioned above, the photoresist is removed from the substrate primarily through an ashing process. However, the photoresist provided to prevent the implantation of ions into portions other than the desired region on the substrate in the ion implantation process is hardened during the ion implantation process, so that the photoresist is not easily removed. Therefore, two steps are required to remove such photoresist. That is, the photoresist is first removed using the dry processing unit 30 and then secondly removed using the wet processing unit 40.

In this case, since the process using the dry processing unit 30 uses physical force, the selectivity is lower than that of the process using the wet processing unit 40, which may damage the lower layer of the photoresist by plasma. . Therefore, the dry processing unit 30 removes only a part of the photoresist, and the remaining photoresist serves to prevent the lower layer of the photoresist from being damaged by the plasma. The remaining photoresist is removed using the wet processing unit 40 having a better selection ratio than the dry processing unit 30.

Primary removal of the photoresist is performed through the following process.

An electric field is formed between the first and second electrodes 360 and 370. A first voltage is applied to the first electrodes 360, and a second voltage lower than the first voltage is applied to the second electrodes 370. At this time, since a potential difference occurs between the first electrode 360 and the second electrode 370, an electric field is formed.

Next, the source gas is supplied to the passage 365 formed between the first and second electrodes 360 and 370. When the source gas valve 38 is opened, the source gas is supplied to the upper buffer 323 through the source gas line 36 and the supply hole 322. Each diffusion hole 342 provides a source gas in the upper buffer 323 toward each passage 365 corresponding to the diffusion hole 342. The strong electric field formed between the first electrode 360 and the second electrode 370 generates plasma using the source gas supplied to the passage 365 between the first electrode 360 and the second electrode 370. The generated plasma is used to process the upper surface of the wafer W by moving to the upper surface of the wafer W by the flow of the source gas continuously supplied.

At this time, the plasma used to remove the photoresist is oxygen plasma. That is, the source gas provided through the source gas line 36 is oxygen plasma. The oxygen plasma removes the photoresist on the wafer W according to the following scheme. Oxygen plasma converts the photoresist into gaseous by-products (CO ₂ , H ₂ O) as follows.

C _x H _y + O ^* → CO ₂ (↑) + H ₂ O (↑)

In the present embodiment, but described as removing the photoresist using an oxygen plasma, in addition to the various plasma can be used. In the present embodiment, an atmospheric pressure plasma is used. Atmospheric pressure plasma is distinguished from vacuum plasma generated when the pressure in the process chamber is below atmospheric pressure. In order to generate the vacuum plasma, a step of forcibly exhausting the gas in the process chamber to the outside using a separate vacuum device is required.

Next, as illustrated in 6d, the photoresist on the wafer W is secondarily removed using the wet processing unit 40 (S40). As described above, the photoresist cured in the ion implantation process is not easily removed by the dry processing unit 30. Therefore, in order to completely remove the cured photoresist is subjected to the following process.

Once the photoresist on the wafer W is first removed, the plasma supply unit 300 returns to its original position from the top of the wafer W by lifting and rotating the second moving arm 32. When the plasma supply unit 300 returns to the original position, the chemical liquid nozzle 42 is moved to the upper portion of the wafer W. Like the plasma supply unit 300, the chemical liquid nozzle 42 moves to the upper portion of the wafer W by lifting and rotating the chemical liquid nozzle moving arm 44, and the chemical liquid nozzle moving arm 44 is the chemical liquid nozzle moving unit 46. Ascend and rotate.

The wet processing unit 40 supplies the chemical liquid to the upper portion of the wafer (W). When the valve 48a is opened, the chemical liquid is supplied to the chemical liquid nozzle 42 through the chemical liquid line 48, and the supplied chemical liquid is injected onto the wafer W rotating through the chemical liquid nozzle 42. At this time, the chemical liquid nozzle 42 injects the chemical liquid for a sufficient time to completely remove the photoresist on the wafer (W).

The wet treatment part 40 uses sulfuric acid (H ₂ SO ₄ ), and sulfuric acid is provided on the wafer W through the chemical liquid line 48 and the chemical liquid nozzle 42. Sulfuric acid decomposes the photoresist into CO ₂ and H ₂ O. In this embodiment, sulfuric acid was used as the chemical liquid, but an acid or a strong oxidant other than sulfuric acid may be used.

Next, the wafer W is rinsed using the wet processing unit 40 (S50). The wet processing unit 40 supplies a rinse liquid to the upper portion of the wafer (W). When the valve 48a is opened, the rinse liquid is supplied to the chemical liquid nozzle 42 through the chemical liquid line 48, and the supplied rinse liquid is injected onto the wafer W rotating through the chemical liquid nozzle 42. Pure water (Deionized H ₂ O) is used as the rinse liquid. However, other rinse solutions may be used.

Meanwhile, in the present embodiment, the chemical liquid and the rinse liquid are described as being supplied through the chemical liquid line 48. Alternatively, the rinse liquid may be supplied through a separate rinse liquid line (not shown).

Next, the wafer W is dried using the drying unit 50 (S60). The chemical liquid nozzle 42 once supplied with the rinse liquid on the upper portion of the wafer W returns to its original position from the upper portion of the wafer W by the rotation of the chemical liquid nozzle moving arm 44. When the chemical liquid nozzle 42 returns to the original position from the top of the wafer W, the dry nozzle 52 is moved to the top of the wafer W. FIG. Like the plasma supply unit 300, the drying nozzle 52 moves to the upper portion of the wafer W by lifting and rotating the drying nozzle moving arm 54, and the drying nozzle moving arm 54 is the drying nozzle moving part 56. Ascend and rotate.

The drying unit 50 supplies a dry gas to the upper portion of the wafer (W). When the valve 58a is opened, the dry gas is supplied to the dry nozzle 52 through the dry gas line 58, and the supplied dry gas is injected onto the rotating wafer W through the dry nozzle 52. . Nitrogen gas is used as dry gas. However, other dry gases may be used.

As described above, during the ion implantation process, the cured photoresist may be first removed by plasma, and secondly, by chemical liquid. In addition, since the plasma is used to remove the photoresist, a separate vacuum device is not required, and the plasma supply unit 300 and the chemical liquid nozzle 42 and the drying are carried out while the wafer W is loaded on the plate 12. The nozzle 52 may be used to continuously remove the photoresist on the wafer W.

In addition, since the metal electrodes 362 and 372 are surrounded by the dielectrics 364 and 374, the metal electrodes 362 and 372 can be prevented from being damaged by arcs generated in the plasma generation step. Since the electrodes 362 and 372 are connected in parallel to the high frequency power supply 350, even when some of the metal electrodes 362 and 372 are damaged, the high frequency voltage may be applied to the remaining electrodes, thereby preventing the process from being interrupted and some of the damaged metal. The electrodes 362 and 372 can be replaced.

In addition, since the source gas is directly supplied to the upper portion of the wafer W through a passage 365 formed between the first and second electrodes 360 and 370, the first electrode 360 is formed by using a small amount of source gas. A source gas atmosphere may be formed between the second electrode 370 and the second electrode 370.

According to the present invention, the cured photoresist can be easily removed during the ion implantation process. In addition, the photoresist removing process, the rinsing process and the drying process may be continuously performed on the loaded wafer.

In addition, since the preheating portion is located above the substrate, it is possible to prevent the preheating portion from being corroded by the chemical liquid.

Claims (9)

An apparatus for removing photoresist on a substrate, A supporter for supporting the substrate such that the pattern surface of the substrate faces upward; A preheater which preheats the substrate to a predetermined temperature; A dry processor for supplying plasma to the upper portion of the substrate to primarily remove the photoresist on the upper portion of the substrate; And And a wet processing unit for supplying a chemical solution to the upper portion of the substrate to remove the photoresist on the upper portion of the substrate. The method of claim 1, The preheater is disposed adjacent to the support, A heating unit dissipating heat on top of the substrate loaded on the support; And a first moving part which moves the heating unit to the upper part of the substrate during preheating and moves away from the upper part of the substrate when preheating is completed. The method of claim 2, And the heating unit includes an infrared lamp. The method of claim 2, The preheating unit, A temperature sensor installed under the substrate to sense a temperature of the substrate; And And a controller for controlling the heating unit according to the temperature sensed by the temperature sensor. The method of claim 1, The dry processing unit is disposed to be adjacent to the support unit, A plasma supply unit supplying plasma to an upper portion of the substrate loaded on the support; It includes a second moving unit for moving the plasma supply unit to the upper portion of the substrate during the plasma supply, and to move out of the upper portion of the substrate when the supply is interrupted, The wet processing portion is disposed adjacent to the support portion, A chemical liquid nozzle supplying a chemical liquid to an upper portion of the substrate loaded on the support part; And a third moving part which moves the chemical liquid nozzle to the upper portion of the substrate when the chemical liquid is supplied and moves out of the upper portion of the substrate when the supply is stopped. In the method of removing the photoresist on the substrate, Loading the substrate onto a support such that the patterned surface of the substrate faces upwards; Moving a heating unit to an upper portion of the substrate to preheat the substrate; Moving the plasma supply unit to an upper portion of the substrate to generate plasma on the upper portion of the substrate, and first removing the photoresist on the substrate using the generated plasma; Moving the chemical liquid nozzle to the upper portion of the substrate to supply the chemical liquid to the upper portion of the substrate, and secondly removing the photoresist on the substrate using the supplied chemical liquid. . The method of claim 6, The method after the secondary removal of the photoresist on the substrate, Moving the rinse nozzle to an upper portion of the substrate to supply a rinse liquid to the upper portion of the substrate, and rinsing the substrate using the supplied rinse liquid; Moving a drying nozzle to an upper portion of the substrate to supply a dry gas to the upper portion of the substrate, and drying the substrate using the supplied dry gas. The method according to claim 6 or 7, And the method is performed with the substrate loaded on the support. The method according to claim 6 to 7, And the photoresist is provided on the substrate for an ion implantation process.

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