KR20050072598A - Temperature control apparatus of semiconductor ashing equipment - Google Patents

Abstract

The wafer includes a wafer chuck on which a photoresist coated wafer is mounted, a lamp mounted on the bottom of the wafer chuck, and a process chamber sealing the same, thereby injecting plasma into the process chamber and ashing the photoresist on the wafer by the high temperature light of the plasma. A temperature control device for controlling a temperature inside a process chamber of a semiconductor ashing facility, comprising: a first temperature sensor mounted on a side surface of a wafer chuck and measuring a temperature of a wafer; and mounted on a process chamber outer wall of a semiconductor ashing facility to measure an exterior wall temperature A lamp controller for controlling the operation of the lamp by comparing the second temperature sensor, the temperature value measured by the first temperature sensor and the preset temperature value of the ashing process, and the lamp power cut-off voltage to the lamp controller And an interlock controller for applying and turning off the lamp. Thus, even when the first temperature sensor is defective, the state inside the process chamber is checked by the second temperature sensor, thereby preventing the temperature from continuously increasing to a temperature higher than the preset ashing process temperature, thereby causing the wafer to be broken or broken. Wafer chips and high temperatures prevent burnout and contamination inside the process chamber, further reducing semiconductor manufacturing process cost.

Description

Temperature Control Apparatus of Semiconductor Ashing Equipment {Temperature Control Apparatus of Semiconductor Ashing Equipment}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a temperature control apparatus for semiconductor equipment, and more particularly, to a semiconductor ashing equipment that removes a photoresist film formed on a wafer using plasma. It relates to a temperature control device.

In general, a semiconductor device is manufactured by repeatedly performing unit processes such as deposition, photography, etching, ion implantation, polishing, and cleaning on a wafer used as a base substrate. Here, the etching process is performed by wet etching and dry etching, and recently, etching for forming a fine pattern requiring a design rule of 0.15 μm or less is mainly performed by dry etching.

In addition, the etching and ion implantation process requires a mask to selectively etch a processed film formed on the wafer or to selectively implant ions on the wafer, and the mask applies a photoresist on the wafer to apply photoresist. It forms on a wafer through the process of forming a film, the exposure process, and the development process for forming a photoresist film in a specific pattern.

After the etching and ion implantation processes are completed, an ashing process of removing the photoresist film used as a mask must be performed. The ashing process is performed by exciting the photoresist film using a lamp or the like and then forming the plasma in the plasma generation chamber. The oxygen radicals in the plasma state are supplied to the process chamber so that the oxygen radicals and the photoresist film react with each other to remove the photoresist film, also known as a PR strip process.

In addition, the ashing process can be classified into a multi-type and a single type according to the arrangement of the wafer, and is repeatedly performed several times along with the processing of the multilayer films formed on the wafer substrate, and recently, apparatuses for performing the ashing process are processed. In terms of capability, process stability, and productivity, single-type devices that process on a sheet basis are mainstream.

As such, the ashing process is a process of heating the wafer at a high temperature for a suitable time and then burning the photoresist on the wafer by plasma light to measure the temperature change. That is, a sudden heat supply on the wafer rapidly volatilizes the solvent in the photoresist film applied to the wafer, leaving a large amount of photoresist residue on the wafer, which is then poorly removed even in subsequent wet strip processes. Causes phenomena. In addition, the wafer may melt or be damaged when the lamp is operated at a temperature higher than a desired temperature. As a result, the temperature profile of the wafer must be measured simultaneously for optimal process conditions and equipment protection along with the ashing process.

Hereinafter, a single plasma semiconductor ashing facility including a temperature control device according to the related art will be described with reference to the accompanying drawings.

1 is a partial cross-sectional view of a semiconductor ashing facility including a temperature control device according to the prior art.

Referring to FIG. 1, the semiconductor ashing apparatus 101 according to the related art is provided with a process chamber 102 in which a substantial process is performed and a plasma generating chamber (not shown) for generating a plasma and connected to each other, and the process chamber 102 is provided. ) Inside the quartz chuck 104 to which the wafer 103 is attached, the quartz plate 105 having the support 113 supporting the wafer chuck 104 below, and the quartz plate 105. A halogen lamp 106 that emits light is formed on the wafer 103, and a lamp housing 111 that surrounds the halogen lamp 106 with the quartz plate 105 as an upper surface is provided. A portion is formed to protrude out of the process chamber 102.

A temperature sensor 107 made of a thermocouple for measuring the temperature of the wafer 103 is attached to the side of the wafer chuck 104, and the temperature sensor 107 is a lamp controller provided outside of the process chamber 102. The temperature value of the measured wafer 103 in connection with 108 is sent to the lamp controller 108. Here, the lamp controller 108 controls the driving of the halogen lamp 106 in accordance with the temperature value of the wafer 103 measured by the temperature sensor 107, the plasma controller for controlling the driving of the plasma in accordance with the preset ashing conditions (Not shown) is provided.

In the semiconductor ashing facility 101 according to the related art having such a configuration, the thermocouple 107 attached to the lower surface of the wafer chuck 104 may be contaminated or melted due to a plurality of high temperature processes. This results in the case that the temperature rises too suddenly or the temperature rises too slowly without accurate temperature control of the lamp, and the removal of the photoresist is not completely removed. In addition, the temperature applied to the wafer 103 continues to rise due to the failure of the halogen lamp 106 to be controlled, which causes breakage of the wafer 103 on which all of the processes have been performed, resulting in a large loss in the semiconductor manufacturing process cost. This happens. In addition, since the broken wafer pieces cause contamination in the process chamber 102, further processing is not performed, and thus the throughput is greatly reduced.

Therefore, the present invention prevents the wafers subjected to several processes from being damaged by checking the temperature inside the process chamber during the semiconductor ashing process even if the thermocouple, which is a temperature sensor, is damaged due to several high temperature processes. When the temperature rises, the interlock is applied to the heater control unit to turn off the lamp, thereby preventing the damaged wafer from further contaminating the inside of the process chamber, and furthermore, semiconductor ashing, which greatly reduces the process loss of the semiconductor manufacturing process. Provide a temperature control device for the installation.

The present invention includes a wafer chuck on which a wafer coated with a photoresist is mounted, a lamp mounted below the wafer chuck, and a process chamber for sealing the wafer, thereby introducing oxygen radicals in a plasma state into the process chamber, thereby producing a wafer by the oxygen radical. A temperature control device for controlling a temperature inside a process chamber of a semiconductor ashing facility for ashing a photoresist on a substrate, comprising: a first temperature sensor mounted on a lower surface of a wafer chuck and measuring an internal temperature of the process chamber; A lamp controller for controlling the operation of the lamp by comparing a second temperature sensor mounted on the outer wall to measure the outer wall temperature, a temperature value measured through the first temperature sensor, and a preset temperature value at which the ashing process is performed; and a lamp controller. To selectively turn off the lamp by selectively applying It characterized in that it comprises a lock controller.

In the temperature control apparatus of the semiconductor ashing facility according to the present invention, it is preferable that the first temperature sensor and the second temperature sensor are made of a thermocouple.

In the temperature control apparatus of a semiconductor ashing facility according to the present invention, an interlock controller is connected to a second temperature sensor and a lamp controller, and a temperature value measured through the second temperature sensor and a preset interlock condition for the lamp controller are provided. It is preferable to selectively apply the lamp power cut-off voltage to the lamp controller in accordance with the result of the temperature value comparison.

Hereinafter, with reference to the accompanying drawings will be described in detail an embodiment of the present invention.

2 is a partial cross-sectional view of a semiconductor ashing facility including a temperature control device according to the present invention.

Referring to FIG. 2, the semiconductor ashing facility 1 including the temperature control device 12 according to the present invention includes a process unit 14 in which most of the semiconductor ashing processes are performed and a temperature control device controlling the process temperature. 12, a plasma generation unit (not shown) for forming a plasma, and a plasma control unit (not shown) for controlling the plasma generation unit (not shown).

The process unit 14 includes a wafer chuck 4 on which a wafer 3 on which a photoresist film is formed is mounted, a lamp 6 positioned below the wafer chuck 4 and dissipating heat to excite the photoresist; A plate 5 placed between the lamp 6 and the wafer chuck 4 and having the wafer chuck 4 attached thereto by a support 13 formed on the upper surface and passing light emitted from the lamp 6; (5) is located and the lamp housing (11) for sealing a plurality of lamps (6) with the plate (5), and a process chamber for sealing all of them with only a part of the lamp housing (11) protruding outwards It is formed by (2).

Here, the wafer chuck 4 is made of aluminum, and the lamp 6 is a halogen lamp, which is formed in plural along the inner circumferential surface of the inside of the lamp housing, and the light emitted is directed toward the bottom of the plate 5 to emit light. Passed through the plate 5 to the wafer chuck 4. In addition, the plate 5 is made of a quartz material, and the process chamber 2 is connected to a plasma generator (not shown) to introduce oxygen radicals in a plasma state to remove photoresist on the upper surface of the wafer.

The temperature control device 12 is positioned below the wafer chuck 4 to measure the temperature around the wafer 3 and the temperature inside the process chamber 2, and the first temperature sensor 7. And control the power of the lamp 6 or turn on / off the power of the lamp 6 according to the result obtained by comparing the measured value measured by the first temperature sensor 7 with the preset process temperature value. A second temperature sensor attached to the lamp controller 8 for turning on / off and the temperature of the outer wall of the process chamber 2 according to the temperature change inside the process chamber 2 during the semiconductor ashing process, attached to the outer wall of the process chamber 2. (10) and the comparison of the measured values obtained from the second temperature sensor 10 and connected to the lamp controller 8 as well as the second temperature sensor 10 and the temperature value of the interlock condition of the preset lamp controller. According to the result, the lamp controller 8 is selectively applied by applying the lamp 6 power-off voltage to the lamp controller 8. Includes an interlock controller 9 which allows the lamp 6 to be turned off. Here, although the first temperature sensor 7 and the second temperature sensor 10 use a temperature sensing sensor made of a thermocouple, a temperature sensing sensor according to another form and other method such as an optical sensor may be used.

The plasma generator (not shown) generates an RF plasma and is connected to the process chamber 2 to supply plasma oxygen radicals during the process. In addition, the plasma control unit (not shown) controls the amount of gas supplied to the plasma generating unit (not shown) to adjust the power of the plasma used in the process.

As described above, according to the semiconductor ashing facility including the temperature control device according to the present invention, even if the first temperature sensor, which is a temperature sensor inside the process chamber, is damaged due to a plurality of high temperature processes, the second temperature sensor is installed on the outer wall of the process chamber. Sensing the temperature inside the process chamber controls the lamp power and power. Thus, by preventing the temperature in the process chamber from continuously rising to a high temperature, damage to the wafer is prevented, thereby preventing contamination and damage in the process chamber, further reducing the process cost loss of the semiconductor manufacturing process, Improve manufacturing process efficiency.

1 is a partial cross-sectional view of a semiconductor ashing plant comprising a temperature control device according to the prior art.

2 is a partial cross-sectional view of a semiconductor ashing facility including a temperature control device according to the present invention.

<Description of Symbols for Major Parts of Drawings>

1, 101: semiconductor ashing equipment

2, 102: process chamber

4, 104: Wafer Chuck

5, 105: Quartz Plate

6, 106: lamp

7: first temperature sensor

8, 108: lamp controller

9: interlock controller

10: second temperature sensor

11: lamp housing

12: temperature control device

Claims (3)

In the process chamber of the semiconductor ashing facility for ashing the photoresist on the wafer by radicals in a plasma state, including a wafer chuck on which the wafer coated with the photoresist is mounted on the upper surface, a lamp mounted below the wafer chuck, and a process chamber for sealing the wafer. In the temperature control device for controlling the temperature, A first temperature sensor mounted on a side of the wafer chuck to measure an internal temperature of the process chamber; A second temperature sensor mounted on an outer wall of the process chamber of the semiconductor ashing facility and measuring an outer wall temperature; A lamp controller which controls the operation of the lamp by comparing the temperature value measured by the first temperature sensor with a preset temperature value at which an ashing process is performed; And And an interlock controller for selectively applying a lamp power cut-off voltage to the lamp controller to turn off the lamp. 2. The temperature control device of a semiconductor ashing facility according to claim 1, wherein said first temperature sensor and said second temperature sensor are thermocouples. The interlock controller of claim 1, wherein an interlock controller is connected to the second temperature sensor and the lamp controller, the temperature value measured by the second temperature sensor, and a temperature value of a preset interlock condition for the lamp controller. And selectively applying a lamp power cut-off voltage to the lamp controller according to the comparison result.