KR20080000426A - Organic electroluminescent display device and method of fabricating the same - Google Patents

Abstract

An organic electro luminescent display device and a method for fabricating the same are provided to reduce the process errors due to the increase of width and thickness of a line by using a sub power transmission line. An organic electro luminescent display device includes a gate line and a data line, a driving thin film transistor, a power line, a power transmission line, a sub power transmission line(263), and an organic light emitting diode. The gate line and the data line define a pixel region in a display region(DR) by crossing each other on a first substrate. The driving thin film transistor is located in the pixel region of the first substrate. The power line is connected to the driving thin film transistor. The power transmission line is located in a non-display region(NR) of the first substrate, and is connected to the power line. The sub power transmission line is located on a second substrate(210), and is connected to the power transmission line. The organic light emitting diode is connected to the driving thin film transistor.

Description

Organic electroluminescent device and method of manufacturing the same {Organic electroluminescent display device and method of fabricating the same}

1 is a circuit diagram showing a pixel of a conventional organic light emitting display device.

2 is a view schematically showing a conventional organic light emitting display device.

3 and 4 are plan views showing an array substrate and an organic light emitting substrate of an organic light emitting display device according to an embodiment of the present invention, respectively.

5 and 6 are cross-sectional views taken along cut lines "A-A" and "B-B" of FIGS. 3 and 4, respectively.

7A to 7C are cross-sectional views illustrating a method of manufacturing an array substrate for an organic light emitting display device according to an embodiment of the present invention.

8A to 8C are cross-sectional views illustrating a method of manufacturing an organic light emitting substrate for an organic light emitting display device according to an embodiment of the present invention.

9 to 11 are schematic views showing organic light emitting diodes having various structures to which embodiments of the present invention are applied.

<Description of Symbols for Major Parts of Drawings>

210: second substrate 220: first electrode

241: first partition 243: second partition

261: second electrode 263: auxiliary power transmission wiring

271: pixel connection pattern 273: power connection pattern

The present invention relates to an organic electroluminescent display device (OELD), and more particularly, to a dual-panel type organic electroluminescent device and a method of manufacturing the same.

Until recently, cathode ray tubes (CRT) have been mainly used as display devices. However, recently, flat panel display devices such as plasma display panels (PDPs), liquid crystal display devices (LCDs), and organic light emitting diodes, which can replace CRTs, have been widely studied and used.

Among the flat panel display devices as described above, the organic light emitting display device is a self-light emitting device, and since the backlight used in the liquid crystal display device, which is a non-light emitting device, is not necessary, it is possible to be light and thin. In addition, the viewing angle and contrast ratio are superior to those of the liquid crystal display, and are advantageous in terms of power consumption. In addition, DC low voltage driving is possible, the response speed is fast, and the internal component is solid, so it is resistant to external shock, the use temperature range is wide, and in particular, it has a low cost in terms of manufacturing cost. In particular, unlike a liquid crystal display or a plasma display, the process is very simple. For example, the deposition and encapsulation processes are mostly.

1 is a circuit diagram illustrating a pixel of a conventional organic light emitting display device.

As illustrated in FIG. 1, the switching thin film transistor T _S of the pixel is connected to the gate line and the data line GL and DL. The driving thin film transistor T _D is connected to the power supply line V _SS L. The capacitor C is connected to the source and gate electrode of the driving thin film transistor T _D. The organic light emitting diode E is connected to the drain electrode of the driving thin film transistor T _D.

In FIG. 1, since an N type thin film transistor is used, a low voltage (V _SS ) power is applied to the driving thin film transistor, and a high voltage (V _DD ) power is applied to the anode of the organic light emitting diode (E). By driving the driving thin film transistor T _D , a low voltage V _SS power is applied to the organic light emitting diode E, and the organic light emitting diode E emits light.

In the organic light emitting diode, a plurality of pixels are arranged in a matrix form. Therefore, in order to normally emit light of the organic light emitting diodes positioned in the plurality of pixels, it is necessary to supply a uniform power as a whole. To this end, a dual bank structure has been proposed in which a power supply wiring for delivering power to the power wiring is formed on both sides of the organic light emitting diode.

2 is a view schematically showing a conventional organic light emitting display device.

As shown in FIG. 2, the organic light emitting diode 10 defines a display area DR for displaying an image and a non-display area NR around the display area DR. In the display area DR, a plurality of pixels are arranged in a matrix form.

In order to supply power to each pixel, a plurality of power supply wirings V _SS L extend in the vertical direction. Number has a extends in the both ends, the stage, respectively, the power source wiring (V _SS L) for delivering a voltage source, power delivery wiring the dual bank structure (V _SS PL) is transverse to the electrical supply lines (V _SS L).

The low voltage input from the power input end of the power transmission wire _{(V SS PL) (V SS} ) power is transmitted to the power line (V _SS L) through the power transmission wire (V _SS PL). The power delivered to the power supply wiring V _SS L is applied to the driving thin film transistor of each pixel.

However, the resistance of the power supply wiring causes a change in voltage along the power supply wiring. That is, when a low voltage power source is input, a voltage rise phenomenon occurs in which the voltage on the power transmission line increases as the distance from the power source input terminal increases. In this way, the voltage is unevenly distributed along the power supply wiring, so that the voltage supplied to the pixels is not uniform. This results in luminance unevenness of the organic light emitting element.

In order to improve the above phenomenon, the power transmission wiring may be formed of a low resistance material, or the thickness or line width of the power transmission wiring may be increased. However, even in this case, problems such as material limitations, an increase in the area of the non-display area, or an increase in process defects may occur.

The present invention has been made to solve the above problems, and an object thereof is to provide a high quality organic electroluminescent device and a method of manufacturing the same.

In order to achieve the above object, the present invention provides a semiconductor device comprising: a gate wiring and a data wiring crossing each other on a first substrate to define a pixel area in a display area; A driving thin film transistor positioned in the pixel region of the first substrate; A power wiring connected to the driving thin film transistor; A power transfer wiring located in the non-display area of the first substrate and connected to the power wiring; An auxiliary power supply wiring located on a second substrate and connected to the power delivery wiring; Provided is an organic light emitting display device including an organic light emitting diode connected to the driving thin film transistor.

The organic light emitting diode may be formed on the second substrate.

A pixel connection pattern positioned between the first and second substrates to connect the organic light emitting diode to the driving thin film transistor; Located between the first and second substrates, it may further include a power connection pattern for connecting the auxiliary power transfer wiring and the power transfer wiring.

The pixel connection pattern and the power connection pattern may be made of the same material.

The display device may further include first and second barrier ribs formed on the second substrate, wherein the first barrier ribs are positioned between the neighboring pixel regions, and the auxiliary power transfer wiring is positioned between the second barrier ribs.

The organic light emitting diode includes: a first electrode positioned in a display area and a non-display area on the second substrate; An organic light emitting layer on the first electrode and positioned in the first partition wall; Located on the organic light emitting layer, it may include a second electrode located in the first partition.

The second partition wall may be located on the first electrode.

It may further include an auxiliary organic light emitting layer positioned between the second partition wall and positioned between the first electrode and the auxiliary power transmission wiring.

The display device may further include a protective layer having a power contact hole exposing the power transfer wiring, wherein the power transfer wiring may contact the power connection pattern through the power contact hole.

The power transmission wiring and the data wiring may be located on the same floor.

The electronic device may further include a data connection wiring crossing the power transmission wiring and connected to the data wiring.

The protective layer may further include a data contact hole exposing the data line, and the data connection line may be connected to the data line through the data contact hole.

In another aspect, the present invention includes forming a gate wiring and a data wiring on the first substrate to cross each other to define a pixel region in a display area; Forming a driving thin film transistor in the pixel region of the first substrate; Forming a power wiring connected to the driving thin film transistor; Forming a power transmission wiring located in the non-display area of the first substrate and connected to the power wiring; Forming an auxiliary power transmission wiring disposed on a second substrate and connected to the power transmission wiring; It provides an organic light emitting device manufacturing method comprising the step of forming an organic light emitting diode connected to the driving thin film transistor.

The organic light emitting diode may be formed on the second substrate.

Forming a pixel connection pattern between the first and second substrates to connect the organic light emitting diode and the driving thin film transistor; and a power connection pattern connecting the auxiliary power transmission wiring and the power transmission wiring. It may include.

The pixel connection pattern and the power connection pattern may be formed in the same step.

The method may further include forming first and second barrier ribs on the second substrate, wherein the first barrier rib is positioned between the neighboring pixel regions, and the auxiliary power transmission wiring is positioned between the second barrier ribs. .

The forming of the organic light emitting display device may include forming a first electrode on a display area and a non-display area on the second substrate; Forming an organic light emitting layer on the first electrode and positioned in the first partition wall; The method may include forming a second electrode on the organic light emitting layer and positioned in the first partition wall.

The second partition wall may be located on the first electrode.

When forming the organic light emitting layer, the method may further include forming an auxiliary organic light emitting layer between the second partition wall and positioned between the first electrode and the auxiliary power transmission wiring.

The method may further include forming a protective layer having a power contact hole exposing the power transfer wiring, wherein the power transfer wiring may contact the power connection pattern through the power contact hole.

The power transmission wiring and the data wiring may be formed in the same step.

The method may further include forming a data connection wiring connected to the data wiring by crossing the power transmission wiring.

The method may further include forming a data contact hole exposing the data line in the protective layer when the power contact hole is formed, wherein the data connection line may be connected to the data line through the data contact hole.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

3 and 4 are plan views illustrating an array substrate and an organic light emitting substrate of an organic light emitting display device according to an exemplary embodiment of the present invention, respectively. 5 and 6 are cross-sectional views taken along cut lines "A-A" and "B-B" of FIGS. 3 and 4, respectively. 3 to 6, the organic electroluminescent device of the present invention is a dual-panel type organic, in which an array element including a thin film transistor and an organic light emitting diode are separately formed on two different substrates. Corresponds to the electroluminescent device. The two substrates are bonded so that their inner surfaces face each other.

3 and 5, the gate wiring 121 extending in the first direction and the data wiring 154 extending in the second direction crossing the first substrate 110 are positioned on the inner surface of the first substrate 110. The power line 152 spaced apart from the data line 154 is positioned along the second direction. The gate line 121, the data line 154, and the power line 152 define the pixel area P.

In the pixel area P in the display area DR, a switching thin film transistor T _S connected to the gate line and the data line 121 and 154 is positioned. The switching thin film transistor T _S is connected to the driving thin film transistor T _D.

The switching thin film transistor T _S is connected to the switching gate electrode 123 connected to the gate wiring 121, the switching semiconductor pattern 142 disposed on the switching gate electrode 123, and the data wiring 154. And a switching drain electrode 156 spaced apart from the switching source electrode 155.

The driving thin film transistor T _D may include a driving gate electrode 125 connected to the switching drain electrode 156, a driving semiconductor pattern 146 disposed on the driving gate electrode 125, and a power wiring 151. And a driving drain electrode 158 spaced apart from the driving source electrode 157. The driving gate electrode 125 is connected to the switching drain electrode 156 through the gate contact hole 133 formed in the gate insulating layer 130.

The connection electrode 181 is formed in the pixel region P. The connection electrode 181 is connected to the driving drain electrode 158 through the connection contact hole 175 of the protective layer 170.

In the non-display area NR, a power supply wiring 151 for transferring voltage power to the power supply wiring 152 extends along the first direction. The power supply wiring 152 is branched to the power transmission wiring 151.

The data connection wiring 183 is connected to the data wiring 154 through the data contact hole 174 of the protective layer 170. The data connection wiring 183 transfers the data voltage supplied from the data driver (not shown) to the data wiring 154. Since the data line 154 and the power supply line and the power line 151 and 152 are formed on the same layer, the data connection line 183 crosses the power supply line 151 and the data through the data contact hole 174. It is connected to the wiring 154.

The storage electrode 127 connected to the driving gate electrode 125 and overlapping the power wiring 152 forms the power wiring 152 and the storage capacitor C.

4 and 6, an organic light emitting diode E is formed in the pixel region P of the second substrate 210.

The organic light emitting diode E includes the first and second electrodes 220 and 261 and the organic light emitting layer 251 positioned between the first and second electrodes 220 and 261.

The first electrode 220 is formed on the inner surface of the second substrate 210. The first electrode 220 extends not only the display area DR but also the non-display area NR.

On the 1st electrode 220, the 1st partition 241 which isolates adjacent pixel area | region is formed between pixel area P. As shown in FIG. On the other hand, the second partition 243 is formed in the non-display area NR along the first direction. First and second buffer layers 231 and 233 are formed under the first and second partition walls, respectively.

In the first partition 241, the organic light emitting layer 251 and the second electrode 261 are sequentially formed. In the second partition 243, the auxiliary organic light emitting layer 253 and the auxiliary power transmission wiring 263 are sequentially formed. By the first and second barrier ribs 241 and 243, the organic light emitting material and the second electrode material are automatically separated by the barrier rib during the deposition process. Accordingly, the organic light emitting layer and the second electrodes 251 and 261 are formed in the pixel region P, and the auxiliary organic light emitting layer and the auxiliary power transmission wirings 253 and 263 are formed in the non-display area NR.

The auxiliary power transfer wiring 263 is electrically floating with the first electrode 220 by the auxiliary organic light emitting layer 253.

The pixel connection pattern 271 is formed on the second electrode 261, and the power connection pattern 243 is formed on the auxiliary power transfer wiring 263.

The pixel connection pattern 271 contacts the second electrode and the connection electrodes 261 and 181 between the first and second substrates 110 and 210 to form an organic light emitting diode and a driving thin film transistor E and T _D. Will be connected.

The power connection pattern 273 is in contact with the auxiliary power transmission wiring and the power transmission wiring 263 and 151 between the first and second substrates 110 and 210. The power connection pattern 273 is in contact with the power transmission wiring 151 through the power contact hole 173 of the protective layer 170.

The pixel connection pattern 271 and the power connection pattern 273 may be formed on the second substrate 210. The pixel connection pattern 271 and the power connection pattern 273 may be formed on the first substrate 110. For example, the pixel connection pattern 271 may be formed on the connection electrode 181. The connection pattern 273 may be formed on the power transmission wiring 151.

The pixel connection pattern 271 and the power connection pattern 273 also function to maintain a cell gap between the first and second substrates 110 and 210.

One of the first and second electrodes 220 and 261 corresponds to an anode and the other corresponds to a cathode. For example, when the N-type thin film transistor is used, the first and second electrodes 220 and 261 correspond to the anode and the cathode, respectively, and when the P-type thin film transistor is used, the first and second electrodes 220 are used. And 261 correspond to a cathode and an anode, respectively. The positive electrode is made of a material having a higher work function than the negative electrode. The second electrode 261 may be opaque when the first electrode 220 is transparent, and the second electrode 261 may be transparent when the first electrode 220 is opaque.

As described above, in the embodiment of the present invention, the auxiliary power transmission wiring connected to the power transmission wiring is formed on the organic light emitting substrate. Accordingly, the resistance of the wiring for delivering the voltage power is reduced, so that the voltage has a uniform distribution along the power transmission wiring. That is, when using a low voltage power supply, the voltage rise phenomenon can be reduced. On the other hand, in the case of using a high voltage power supply, as the distance from the power supply input terminal, the voltage drop phenomenon that the voltage in the power transmission wiring is reduced can be reduced.

In addition, by using the auxiliary power transmission wiring, it is not necessary to increase the line width and thickness of the power transmission wiring in order to lower the resistance. As a result, process defects due to the increase in the line width and thickness of the wiring can be reduced. In addition, the area of the outer periphery of the array substrate on which a large number of wirings and patterns are formed can be reduced.

7A to 7C are cross-sectional views illustrating a method of manufacturing an array substrate for an organic light emitting display device according to an embodiment of the present invention, and are taken along cut line A-A of FIG. 3.

As illustrated in FIG. 7A, a gate metal 121, a switching gate electrode 123, and a driving gate electrode 125 are formed by depositing and patterning a first metal material on an inner surface of the first substrate 110. .

Next, a gate insulating film 130 is formed on the first substrate 110 on which the gate wiring 121 is formed. Next, the gate insulating layer 130 is patterned to form a gate contact hole (133 in FIG. 3) exposing the driving gate electrode.

Next, pure silicon (a: Si-H) and amorphous silicon (n + or p + a-Si: H) containing impurities are deposited and patterned on the gate insulating layer 130 to form an active layer 147 and an ohmic layer. The contact layer 148 is formed. The active layer 147 and the ohmic contact layer 148 form a driving semiconductor pattern 146. Meanwhile, the switching semiconductor pattern 142 of FIG. 3 also has an active layer and an ohmic contact layer.

Next, a second metal material is deposited and patterned on the first substrate 110 on which the driving semiconductor layer 146 is formed, and thus, power supply wiring 151, power wiring 152, data wiring 154, and switching. The source electrode 155, the switching drain electrode 156, the driving source electrode 157, and the driving drain electrode 158 are formed.

Next, as shown in FIG. 7B, the passivation layer 170 is formed on the first substrate 110 on which the data line 154 is formed. Next, the passivation layer 170 is patterned to form a power contact hole 173, a data contact hole 174, and a connection contact hole 175.

Next, as illustrated in FIG. 7C, a third metal material is deposited and patterned to form connection electrodes and data connection wirings 181 and 183.

Through the process as described above, to produce an array substrate for an organic light emitting device according to an embodiment of the present invention.

8A to 8C are cross-sectional views illustrating a method of manufacturing an organic light emitting substrate for an organic light emitting display device according to an embodiment of the present invention, and are taken along cut line B-B of FIG. 4.

As shown in FIG. 8A, a fifth metal material is deposited on the inner surface of the second substrate 210 to form the first electrode 220. Next, first and second buffer layers 231 and 233 are formed on the first electrode 220. The first buffer layer 231 is formed between the pixel regions P. As shown in FIG. The second buffer layer 233 is formed in the non-display area NR.

Next, first and second partitions 241 and 243 are formed on the first and second buffer layers 231 and 233, respectively. The first partition 241 separates the pixel region P. As shown in FIG. The second partition 243 is formed in the non-display area NR, and the outer second partition 243 is positioned in the outer line of the first electrode 220.

Next, as illustrated in FIG. 8B, an organic light emitting material is deposited on the second substrate 210 on which the first and second partitions 241 and 243 are formed, and the organic light emitting layer 251 and the auxiliary organic light emitting layer 253 are formed. To form. The organic light emitting material is automatically separated by the first and second partitions 241 and 243. Accordingly, the organic light emitting layer 251 is formed in the first partition 241, and the auxiliary organic light emitting layer 253 is formed between the second partitions 243.

Next, a sixth metal material is deposited on the second substrate 210 on which the organic light emitting layer 251 is formed to form the second electrode 261 and the auxiliary power transmission wiring 263. Like the organic light emitting material, the sixth metal material is automatically separated by the first and second partitions 241 and 243. Accordingly, the second electrode 261 is formed in the first partition 241, and the auxiliary power transmission wiring 263 is formed between the second partitions 243.

Next, as illustrated in FIG. 8C, a seventh metal material is deposited and patterned on the second substrate on which the second electrode 261 is formed, thereby forming the pixel connection pattern 271 and the power connection pattern 273. . The pixel connection pattern 271 is formed on the second electrode 261, and the power connection pattern 273 is formed on the auxiliary power transfer wiring 263.

Through the process as described above, to produce an organic light emitting substrate for an organic light emitting device according to an embodiment of the present invention.

The manufactured array substrate and the organic light emitting substrate as described above are aligned so that the pixel connection pattern is in contact with the connection electrode and the power connection pattern is in contact with the power transmission wiring. Although not shown, the two substrates are bonded together through a seal pattern located along the outside of the non-display area.

9 to 11 are schematic views illustrating organic light emitting diodes having various structures to which embodiments of the present invention are applied.

The organic light emitting display device 100 of FIG. 9 is a single bank structure organic light emitting display device in which a power supply wiring 151 is formed on one side of an array substrate. The power line 152 is vertically branched from the power transfer line 153 to supply voltage power to the pixel area of the display area DR. The auxiliary power transfer wiring is formed on the organic light emitting substrate in response to the power transfer wiring.

The organic light emitting display device 100 of FIG. 10 is a dual bank structure organic light emitting display device in which a power transmission wiring 151 is formed on both sides of an array substrate facing each other. The power line 152 is vertically branched from the power transfer lines 151 on both sides to supply voltage power to the pixel area of the display area DR. The auxiliary power transfer wiring is formed on the organic light emitting substrate in response to the power transfer wiring.

The organic light emitting display device 100 of FIG. 11 is a mesh structure organic light emitting display device in which a power supply wiring 151 is formed on all four sides of an array substrate. The power supply wiring 152 is vertically branched from the four power transmission wirings 151 to supply voltage power to the pixel region. The auxiliary power transfer wiring may be formed on the organic light emitting substrate in response to the power transfer wiring.

Embodiment of the present invention described above is an example of the present invention, it is possible to change freely within the scope included in the spirit of the present invention. Accordingly, the invention includes modifications of the invention within the scope of the appended claims and their equivalents.

As described above, in the embodiment of the present invention, the auxiliary power transmission wiring connected to the power transmission wiring is formed on the organic light emitting substrate. Accordingly, the resistance of the wiring for delivering the voltage power is reduced, so that the voltage has a uniform distribution along the power transmission wiring.

In addition, by using the auxiliary power transmission wiring, it is not necessary to increase the line width and thickness of the power transmission wiring in order to lower the resistance. Therefore, process defects due to the increase in the line width and thickness of the wiring can be reduced. In addition, the area of the outer periphery of the array substrate on which a large number of wirings and patterns are formed can be reduced.

Claims (24)

A gate wiring and a data wiring crossing each other on the first substrate to define a pixel area in the display area; A driving thin film transistor positioned in the pixel region of the first substrate; A power wiring connected to the driving thin film transistor; A power transfer wiring located in the non-display area of the first substrate and connected to the power wiring; An auxiliary power supply wiring located on a second substrate and connected to the power delivery wiring; An organic light emitting diode connected to the driving thin film transistor Organic electroluminescent device comprising a. The method of claim 1, The organic light emitting diode is formed on the second substrate. The method of claim 2, A pixel connection pattern positioned between the first and second substrates to connect the organic light emitting diode and the driving thin film transistor; A power connection pattern positioned between the first and second substrates to connect the auxiliary power transfer wiring and the power transfer wiring; An organic light emitting display device further comprising. The method of claim 3, wherein The pixel connection pattern and the power connection pattern are made of the same material. The method of claim 2, The organic light emitting device of claim 1, further comprising first and second barrier ribs formed on the second substrate, wherein the first barrier ribs are positioned between the neighboring pixel regions, and the auxiliary power transmission wiring is positioned between the second barrier ribs. The method of claim 5, The organic light emitting device, A first electrode positioned in the display area and the non-display area on the second substrate; An organic light emitting layer on the first electrode and positioned in the first partition wall; A second electrode on the organic light emitting layer and positioned in the first partition wall Organic electroluminescent device comprising a. The method of claim 6, The second partition wall is an organic light emitting device positioned on the first electrode. The method of claim 7, wherein And an auxiliary organic light emitting layer disposed between the second partition walls and positioned between the first electrode and the auxiliary power transmission wiring. The method of claim 3, wherein And a protective layer having a power contact hole exposing the power transfer wiring, wherein the power transfer wiring contacts the power connection pattern through the power contact hole. The method of claim 9, And the power transmission line and the data line are on the same layer. The method of claim 10, The organic light emitting device further comprises a data connection wiring crossing the power transmission wiring and connected to the data wiring. The method of claim 11, The protective layer further includes a data contact hole exposing the data line, and the data connection line is connected to the data line through the data contact hole. Forming a gate line and a data line on the first substrate to cross each other to define a pixel area in the display area; Forming a driving thin film transistor in the pixel region of the first substrate; Forming a power wiring connected to the driving thin film transistor; Forming a power transmission wiring located in the non-display area of the first substrate and connected to the power wiring; Forming an auxiliary power transmission wiring disposed on a second substrate and connected to the power transmission wiring; Forming an organic light emitting diode connected to the driving thin film transistor Organic electroluminescent device manufacturing method comprising a. The method of claim 13, The organic light emitting diode is a method of manufacturing an organic light emitting device is formed on the second substrate. The method of claim 14, Forming a pixel connection pattern between the first and second substrates to connect the organic light emitting diode and the driving thin film transistor; and a power connection pattern connecting the auxiliary power transmission wiring and the power transmission wiring. Organic electroluminescent device manufacturing method comprising a. The method of claim 15, The pixel connection pattern and the power connection pattern are formed in the same step. The method of claim 14, Further comprising forming first and second barrier ribs on the second substrate, And the first barrier rib is positioned between the neighboring pixel regions, and the auxiliary power transmission wiring is positioned between the second barrier ribs. The method of claim 17, Forming the organic light emitting device, Forming a first electrode on the display area and the non-display area on the second substrate; Forming an organic light emitting layer on the first electrode and positioned in the first partition wall; Forming a second electrode on the organic light emitting layer and positioned in the first partition wall Organic electroluminescent device manufacturing method comprising a. The method of claim 18, The second partition wall is an organic light emitting device manufacturing method located on the first electrode. The method of claim 19, And forming an auxiliary organic light emitting layer between the second partition wall and positioned between the first electrode and the auxiliary power transmission wiring when the organic light emitting layer is formed. The method of claim 15, And forming a protective layer having a power contact hole exposing the power transfer wiring, wherein the power transfer wiring is in contact with the power connection pattern through the power contact hole. The method of claim 21, The power transmission wiring and the data wiring is formed in the same step of the organic light emitting device manufacturing method. The method of claim 22, And forming a data connection wiring connected to the data wiring by crossing the power transmission wiring. The method of claim 23, The method may further include forming a data contact hole exposing the data line in the protective layer when the power contact hole is formed. And the data connection line is connected to the data line through the data contact hole.

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