KR20070122336A - Method of fabricating organic electroluminescence display device - Google Patents

Abstract

A method of manufacturing an organic electro-luminescence display device is provided to prevent second electrodes from being short-circuited by forming a side profile of a partition pattern in a reverse tapered shape. A first electrode(53) is formed on an insulation substrate(51). An insulation pattern(55P) is formed at a predetermined position on the first electrode. A photo-sensitive film(59P) is formed on the substrate having the insulation pattern. An ion doping part(IDP) is formed by selectively performing an ion doping process on the photo-sensitive film. A double partition pattern(60) is formed on the insulation pattern by exposing and developing the photo-sensitive film. An organic light emitting layer(61) is formed on the first electrode between the insulation patterns. A second electrode(63) is formed on the organic light emitting layer.

Description

Manufacturing method of organic electroluminescent device {METHOD OF FABRICATING ORGANIC ELECTROLUMINESCENCE DISPLAY DEVICE}

1A to 1E are cross-sectional views of processes for explaining a method of manufacturing a conventional organic light emitting device.

2A to 2F are cross-sectional views for each process for explaining a method of manufacturing an organic light emitting device according to the present invention.

The present invention relates to a method of manufacturing an organic light emitting device, and more particularly, to a method of manufacturing an organic light emitting device having a partition pattern.

In general, an organic light emitting device injects electrons and holes into an organic emission layer from an electron injection electrode and a hole injection electrode, respectively. It is a device that emits light when an exciton, which is a combination of electrons and holes, drops from an excited state to a ground state. Due to this principle, unlike the conventional thin film liquid crystal display device, since a separate light source is not required, there is an advantage in that the volume and weight of the device can be reduced. In addition, the organic EL device exhibits high quality panel characteristics (low power, high brightness, high reaction rate, low weight). Because of these characteristics, organic light emitting diodes are considered to be powerful next-generation displays that can be used in most consumer electronic applications such as mobile communication terminals, CHS, PDA, Camcorder, Palm PC. In addition, since the manufacturing process is simple, there is an advantage that can reduce the production cost much more than the conventional liquid crystal display device.

1A to 1E are cross-sectional views of processes for describing a method of manufacturing a conventional organic light emitting device.

As shown in FIG. 1A, an insulating substrate 1 in which a plurality of pixel regions P is defined is provided. A transparent conductive metal film is formed on the substrate 1. The metal film is patterned to form first electrodes 3, which are anode electrodes. The first electrodes 3 may be patterned in the form of stripes. An insulating film 5 and a first photosensitive film 7 are sequentially formed on the substrate having the first electrodes 3. The insulating layer 5 may use any one selected from the group of inorganic insulating materials including silicon nitride (SiNx) and silicon oxide (SiO 2). The first photoresist film 7 is of a negative type, and the exposed portions in the subsequent steps will remain after development. Subsequently, a predetermined first mask M1 is prepared on the substrate having the first photosensitive film 7. The first mask M1 may be patterned to cover a portion corresponding to the pixel area P. FIG. The first photoresist film exposure process is performed by irradiating light onto the first mask M1.

As shown in FIG. 1B, the exposed first photosensitive film is developed. As a result, the first photosensitive film pattern 8 that exposes the pixel region P is formed.

As illustrated in FIG. 1C, the insulating layer is etched using the first photoresist layer pattern to form insulating patterns 5P. The insulating patterns 5P are spaced apart from each other at regular intervals with the pixel region P interposed therebetween, and are arranged in one direction. Next, the first photoresist pattern is removed. Next, a second photosensitive film 9 is coated on the entire surface of the substrate on which the insulating patterns 5P are formed. The second photosensitive film 9 may be a negative photosensitive film. A predetermined second mask M2 is prepared on the substrate having the second photosensitive film 9. The second mask M2 may be patterned to cover a portion corresponding to the pixel area P. FIG. The second photosensitive film exposure process is performed by irradiating light on the upper portion of the second mask M2.

As shown in Fig. 1D, the second photosensitive film on which the exposure process is completed is developed. As a result, barrier rib patterns 10 are formed on the insulating pattern 5P. The partition patterns 10 correspond to the second photoresist film remaining after development. The partition patterns 10 may have an inverse tapered side profile. The barrier rib patterns 10 may have an inverse tapered side profile to prevent the second electrodes from contacting the first electrodes 3 in a later process.

As shown in FIG. 1E, the organic emission layers 11 are formed on the first electrodes 3 between the barrier rib patterns 10. The organic light emitting layers 11 may be made of a single material, but in general, a multilayer structure of various organic materials is mainly used. Here, when the organic light emitting layer 11 is formed after the barrier rib patterns 10 are formed, the organic light emitting layers 11 are not deposited on the side surfaces of the barrier rib pattern 5P, as illustrated, and the barrier rib pattern 10 is formed. Are formed only on the tops of the electrodes) and the tops of the first electrodes 3. Subsequently, second electrodes 13 are formed on the organic light emitting layers 11 through a deposition process. The second electrodes 13 may be formed by selecting one of metals consisting of calcium (Ca), magnesium (Mg), aluminum (Al), or the like as a cathode electrode, or lithium fluorine / aluminum (LiF / It may be formed of a double metal layer such as Al).

Meanwhile, the first electrodes 3 correspond to hole injection electrodes for injecting holes into the organic light emitting layers 11, and the second electrodes 13 correspond to electrons in the organic light emitting layers 11. Corresponds to the electron injection electrode for injecting electrons.

In the above-described prior art, the barrier rib patterns must be patterned to have an inverse tapered shape using a photosensitive film. However, since the exposure amount and the exposure intensity of the current exposure equipment change frequently, the partition patterns may be non-uniformly patterned in the side profile. In addition, a photosensitive film is used as a material of the barrier rib patterns, and a side profile of the barrier rib patterns may be determined to some extent by the photosensitive film material property. In other words, it is difficult to realize a complete reverse tapered side profile using the photoresist. As a result, when the second electrodes are formed, the second electrodes are shorted.

In order to solve the above problems, an object of the present invention is to provide a method for manufacturing an organic light emitting device in which the side profile of the partition pattern is tapered in reverse, so that the second electrodes can prevent the short circuit in a subsequent process.

In order to achieve the above object, the present invention provides a method of manufacturing an organic light emitting device. The method comprises forming a first electrode on an insulating substrate, forming an insulating pattern at a predetermined position on the first electrode, forming a photosensitive film on the substrate having the insulating pattern, and selectively ionizing the photosensitive film on top of the ion. Forming a doped portion, exposing and developing a photosensitive film having an ion doped portion to form a double barrier rib pattern on the insulating pattern, forming an organic light emitting layer on the first electrode between the insulating patterns, and forming a second on the organic light emitting layer Forming an electrode.

In the ion doping process, the doping concentration of the ions is advanced to 1E14 to 1E15 doses, and the doping energy of the ions is preferably performed in the range of 5 to 200 KeV. It is preferable that a negative photosensitive film is used for the said photosensitive film.

Forming the barrier rib pattern includes exposing and developing the photosensitive film having the ion doped portion to leave the photosensitive film under the ion doped portion.

The developing process may further include overdeveloping the photoresist film remaining under the ion doped portion.

After the exposure and development, the method further includes ashing and removing the photoresist film remaining under the ion doping unit.

The barrier rib pattern is preferably patterned to have an inverse tapered shape.

(Example)

Hereinafter, an organic light emitting diode and a method of manufacturing the same according to the present invention will be described in detail with reference to the accompanying drawings.

2A through 2F are cross-sectional views of processes for describing a method of manufacturing an organic light emitting diode according to the present invention.

As shown in FIG. 2A, an insulating substrate 51 in which a plurality of pixel regions P1 is defined is provided. A transparent conductive metal film is formed on the substrate 51. The transparent conductive metal film may use a metal having a large work function such as indium tin oxide (ITO). The metal film is patterned to form first electrodes 53, which are anode electrodes. The first electrodes 53 may be patterned in a stripe shape. An insulating film 55 and a first photoresist film 57 are sequentially formed on the substrate having the first electrodes 53. The insulating layer 55 may use any one selected from the group of inorganic insulating materials including silicon nitride (SiNx) and silicon oxide (SiO 2). The first photoresist film 57 is of a negative type, and the exposed portions in the subsequent process remain after development. Subsequently, a predetermined first mask N1 is prepared on the substrate having the first photosensitive film 57. The first mask N1 may be patterned to cover the pixel area P1. The first photoresist film exposing process is performed by irradiating light on the first mask N1.

As shown in FIG. 2B, the exposed first photosensitive film is developed. As a result, the first photosensitive film pattern 58 exposing the pixel region P1 is formed.

As illustrated in FIG. 2C, the insulating layer is etched using the first photoresist layer pattern to form insulating patterns 55P. The insulating patterns 55P are spaced apart from each other at predetermined intervals with the pixel region P1 interposed therebetween, and are arranged in one direction. Next, the first photoresist pattern is removed. Next, a second photosensitive film 59 is coated on the entire surface of the substrate on which the insulating patterns 55P are formed. The second photosensitive film 9 may be a negative photosensitive film. Next, a predetermined second mask M2 is prepared on the substrate having the second photosensitive film 59. The second mask M2 is patterned to cover the pixel region P1 and to expose predetermined portions of the insulating patterns 55P. The second mask M2 may be a mask for ion implantation. Ion doping is performed in the second photoresist layer 59 through the second mask M2. The doped ions may be N type or P type. The doping process may be performed with a doping concentration of 1E14 to 1E15 doses and a doping energy in the range of 5 to 200 KeV. As a result of the ion doping, ion doping parts (IDPs) are formed in the second photoresist layer 59. The ion doped portions IDP may be damaged by ion doping. The damaged ion doped parts (IDPs) have a property of being modified and cured.

As shown in FIG. 2D, a predetermined third mask N3 is prepared on the substrate having the ion doped portion IDP. The third mask N3 is patterned to expose the ion doped portions IDP. The second photoresist film exposing process is performed by irradiating light onto the third mask N3.

As shown in Fig. 2E, the second photosensitive film on which the exposure process is completed is developed. The ion doped portions IDP are not removed even during the development process because they are cured by the ion doping process. As a result, a second photoresist film remains under the ion doped portions IDP and the ion doped portions IDP. In this case, when the developing process is excessively over developed or the ashing process is performed, the remaining second photoresist layer may be excessively removed in the lateral direction of the ion doped portions IDP. That is, the degree of inverse tapered shape of the partition patterns 60 may be adjusted through the transient development process or the ashing process. As a result, reverse tapered barrier rib patterns 60 may be formed on the insulating patterns 55P. The barrier rib patterns 60 may include second photoresist layer patterns 59P and ion doping units IDP.

The barrier rib patterns 60 may have a reverse tapered side profile to prevent the second electrodes from contacting the first electrodes 53 in a subsequent process.

As illustrated in FIG. 2F, the organic emission layers 61 are formed on the first electrodes 53 between the partition patterns 60. The organic light emitting layers 61 may be made of a single material, but in general, a multilayer structure of various organic materials is mainly used. If the organic light emitting layer 61 is formed after the barrier rib patterns 60 are formed, as shown, the organic light emitting layers 61 are not deposited on the side surfaces of the barrier rib pattern 55P and the barrier rib pattern 60 is formed. It is selectively formed only in the upper portion of the field and the upper portion of the first electrode (53). Subsequently, second electrodes 63 are formed on the organic emission layers 61 through a deposition process. The second electrodes 63 are formed as a cathode electrode by selecting one of metals consisting of calcium (Ca), magnesium (Mg), aluminum (Al), or lithium fluorine / aluminum (LiF / It may be formed of a double metal layer such as Al).

Meanwhile, the first electrodes 53 correspond to hole injection electrodes for injecting holes into the organic light emitting layers 61, and the second electrodes 63 are electrons to the organic light emitting layers 61. Corresponds to the electron injection electrode for injecting (electron).

According to the present invention, there is provided a double partition pattern having a photoresist pattern and an ion doped portion stacked in sequence. The photoresist pattern is excessively removed in the lateral direction of the ion doped portion. Therefore, in the present invention, the side profiles of the barrier rib patterns may be formed to reverse taper, thereby preventing the short circuit of the second electrodes in the subsequent process of forming the second electrodes. As a result, the production cost can be reduced and the production yield can be increased.

Claims (8)

Forming a first electrode on the insulating substrate, Forming an insulating pattern on a predetermined position on the first electrode, Forming a photosensitive film on the substrate having the insulating pattern, Selectively ion doping the upper portion of the photosensitive film to form an ion doped portion, Exposing and developing the photosensitive film having the ion doped portion to form a double barrier rib pattern on the insulating pattern; Forming an organic emission layer on the first electrode between the insulating patterns, A method of manufacturing an organic light emitting device, including forming a second electrode on the organic light emitting layer. The method of claim 1, wherein the ion doping process proceeds the doping concentration of the ions to 1E14 to 1E15 doses. The method of claim 1, wherein the ion doping process advances the doping energy of the ion within a range of 5 to 200 KeV. The method of claim 1, wherein the photosensitive film is a negative type photosensitive film. The method of claim 1, wherein forming the double partition pattern And selectively exposing and developing the photosensitive film having the ion doped portion to leave the photosensitive film under the ion doped portion. The method of claim 5, wherein the developing process The method of manufacturing an organic light emitting device further comprises over-developing the photoresist film remaining under the ion doped portion. The method according to claim 5, wherein after exposing and developing: The method of manufacturing an organic light emitting device further comprising ashing and removing the photoresist film remaining under the ion doping unit. The method of claim 5, wherein the double barrier rib pattern is patterned to have an inverse tapered shape.

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