KR20070105172A - Film for forming metal-reflection layer of field-emission type display and field-emission type display device - Google Patents

Abstract

A transfer film for forming a metal reflection layer of a field-emission type display device and a field-emission type display device including the metal reflection layer formed thereby are provided to improve productivity by reducing an error rate. A transfer film for forming a metal reflection layer includes a base film(11), a releasing layer(12), a metal deposition layer(13) for forming a metal gloss, and an adhesive layer(14). The metal deposition layer has a thickness of optical density 4 to 5. The amount of a surface[111] of a metal crystal structure is 30 percent larger than the amount of a surface[200]. The releasing layer is formed with a methylmethacrylate-based acrylic resin having a glass transition point of 85-110 degrees centigrade. The releasing layer includes SiO2 particles of 3-8 percent. A secondary diameter of the SiO2 particles is 0.1-2 micrometers.

Description

Display device using field emission method including transfer film for forming metal reflective film of display element using field emission method and metal reflective film formed therefrom {Film for forming metal-reflection layer of field-emission type display and field-emission type display device}

1 is a cross-sectional view of a transfer film for forming a metal reflection film according to the present invention.

* Description of the symbols for the main parts of the drawings *

11-base film 12-release layer

13-metal deposition layer 14-adhesive layer

The present invention relates to a transfer film for forming a metal reflective film of a display device using a field emission method and a display device using a field emission method including the same, and more specifically, a phosphor using an electron beam such as a CRT or a field emission display (FED). The present invention relates to a transfer film used to form a metal reflective film for reflecting light emitted from a phosphor to improve brightness, and a field emission method including the same.

In general, a CRT has been mainly used as an image display element of a color television. Due to its structural characteristics, the CRT has a deep depth compared to the size of the front surface of the screen, making it impossible to produce a thin television receiver.

Accordingly, devices using display elements such as EL display elements, plasma display elements, and liquid crystal display elements have been developed as thin flat image display devices. However, all of them have insufficient problems in comparison with the CRT in terms of performance such as brightness, contrast and color reproducibility.

In order to solve such a problem, a phosphor is formed by dividing a screen on a screen into a matrix on a screen and deflecting an electron beam for each segment for the purpose of displaying a high quality image comparable to a CRT on a flat panel device using an electron beam. There has been proposed an image display device that emits light and constitutes a screen of a color television as a whole.

Such a display device applies a field emission phenomenon to a display. When a high electric field is applied to a metal or a conductor in a vacuum, electrons pop out of the solid surface through quantum mechanical tunneling. Field emission display (FED) is a field emission display (FED) that applies an array of many vacuum microelements in a matrix form to emit electrons by addressing intersections of rows and columns. It collides with the phosphor and emits light.

The operation principle of the FED, which applies the principle of field emission to a display, is that the electrons emitted by the field by the electric field applied to the cathode and the gate are accelerated toward the anode by the electric field between the cathode and the anode and hit the anode electrode. At this time, the anode makes a transparent electrode and deposits a colored phosphor thereon, and the phosphor receives the colliding energy of the accelerated electrons to emit light. The anode is turned on / off by the addressing of the gate voltage to operate as a display. Done.

That is, the field emission display panel includes an ITO transparent electrode (eg, ITO) on a glass substrate; In addition, a phosphor layer is formed, and a metal reflection film is formed on the phosphor layer to improve luminance by preventing the emitted light from being reflected back.

In general, the conventional technique of forming a metal reflective film on the back of the phosphor forms a black matrix on the glass of the panel, and then applies red, green, and blue phosphor films, respectively. It forms through the process of drying, exposure, and image development. Then, to smooth the metal reflective film, a thin resin layer such as PVA or acrylic is applied and dried, and then each panel is deposited by a batch method, and the organic materials are burned by decomposition at a temperature of 450 ° C. or higher, and the graphite component and phosphor in the black matrix. And leaving only the aluminum reflective film to complete the screen of the panel.

However, according to the conventional technology, the diffuse reflection of the metal reflective film is severe, and thus the luminance is insufficient, and the process and the process for forming the micropores in the metal layer must be performed, and the batch time must be deposited one by one, so that the process time and cost are increased. It has a lot of disadvantages such as a lot of defects.

Accordingly, the present inventors have been trying to solve the problem of forming the metal reflective film of the display device using the field emission method by the batch type, while forming a metal deposition layer for forming the metal reflective film into the film and transferring the same. A transfer film was developed to form a metal reflective film on a display panel.

Accordingly, an object of the present invention is to form a metal reflective film of a display device using a field emission method that can simplify the display panel manufacturing process by transferring the forming of the metal reflective film by a batch type to a transfer film including a metal reflective film. To provide a transfer film.

In addition, an object of the present invention is to provide a display device using a field emission method including a metal reflective film layer formed from the transfer film as described above.

The transfer film for forming a metal reflective film of the display device using the field emission method of the present invention for achieving the above object, the base film, a release layer, a metal deposition layer and an adhesive layer for expressing the metallic gloss, The deposited layer is formed with a thickness of 4 to 5 optical density and is characterized in that the amount of the 111 plane of the crystal structure of the metal is more than 30%.

Preferably, the release layer is a methyl methacrylate acrylic resin having a glass transition temperature of 85 to 110 ° C., containing 3 to 8% of SiO ₂ particles, and having a secondary particle diameter of 0.1 to 2 μm. It is done. Here, the term "secondary particle size" may be defined as an average size (particle size) of secondary particles in which particles naturally exist.

Display device using the field emission method of the present invention is characterized in that it comprises a metal reflective film layer formed from the transfer film as described above.

The present invention will be described in more detail as follows.

A cross section of the transfer film for forming a metal reflective film of the display device using the field emission method of the present invention is shown in FIG.

The base film 11 is a film for coating processing, and mostly uses a polyester film.

The release layer 12 helps the formation of the metal deposition layer and ultimately serves to release the base film and the deposition layer. A release layer resin is preferably a methacrylate-based acrylic resin which is decomposed at a temperature above 400 ℃, SiO ₂ It is preferable to include 3 to 8% of the particles so that the micropores can be formed by the bending of the phosphor and the bending of the particles when the film is transferred. If the amount of silica particles in the release layer exceeds 8%, the number of micropores becomes too large, resulting in a decrease in brightness after the completion of the product. If the amount of silica particles is less than 3%, the number of pores is small. Emission of the organic decomposition gas of the phosphor layer is not smooth, resulting in swelling of the reflective film. Moreover, it is preferable that the secondary particle diameter of a silica particle is 0.1-2 micrometers. It is preferable that the thickness of the release layer which plays such a role is 1-2 micrometers.

In the meantime, the metal deposition layer 13 is formed by depositing a metal such as aluminum to express metal gloss. Specifically, the metal deposition layer 13 is formed by depositing aluminum in a high vacuum on a release layer. The metal deposition layer thus formed has an optical density of 4 to 5, and it is appropriate that 111 surfaces of the metal crystal structures are 30% or more, preferably 50% or more with respect to 200 surfaces.

If the optical density of the metal deposition layer is less than 4, the luminance value is lowered. If the optical density of the metal deposition layer is greater than 5, there is a problem in that the followability during transfer is insufficient. In addition, if the amount of the 111 surface of the metal crystal structure is less than 30% with respect to the 200 surface, there is a problem that the luminance value is lowered.

When the adhesive layer 14 is formed on the above metal deposition layer, the adhesive layer is a normal acrylic resin, and may be formed by applying with an appropriate thickness.

The transfer film having the structure as described above is capable of transferring at a temperature of 150 ~ 180 ℃, a heating temperature of 45 ~ 70 ℃ of the transfer roll.

As described above, using SiO ₂ in the release layer induces micropores in the metal deposition layer, and improves the brightness by appropriately adjusting the optical density of the metal deposition layer and the crystal structure of the metal to shorten the display panel manufacturing process and process time. It is possible to reduce defects and to improve productivity in panel manufacturing.

Hereinafter, the present invention will be described in detail with reference to Examples, but the present invention is not limited by the Examples.

Example 1

95.5% by weight of polymethyl methacrylate-based acrylic resin (glass transition temperature 85-110 ° C.) and 4.5% by weight of SiO ₂ were diluted in a mixed solvent of methyl ethyl ketone and toluene on a 25 μm-thick polyester film to a thickness of 1.5 μm. The coating was dried at 100 ° C. for a suitable time to form a release layer. SiO ₂ used at this time has a secondary particle diameter of 0.1 to 2 µm.

After the release layer was formed, aluminum was deposited thereon to a thickness of 4.5 by using a vacuum evaporator to form a metal layer. At this time, the amount of 111 faces in the metal crystal was 55% with respect to 200 faces. The optical density was measured using TR927 (manufactured by Macbeth), and the metal crystal structure was measured by measuring the half width of the optical X-ray.

An adhesive layer was formed to a thickness of 2 μm using an acrylic resin having an appropriate glass transition temperature on the metal layer to prepare a transfer film for forming a metal reflective film of a display device using a field emission method.

Example 2

In the same manner as in Example 1 to prepare a transfer film for forming a metal reflective film of the display device using the field emission method, except that the content of SiO _{2 in} the release layer composition to 7% by weight of polymethyl methacrylate acrylic resin The composition was 93% by weight.

Example 3

In the same manner as in Example 1, a transfer film for forming a metal reflective film of a display device using a field emission method was manufactured, except that a metal deposition layer was deposited at a thickness of 5 optical density.

Example 4

In the same manner as in Example 1, a transfer film for forming a metal reflective film of a display device using a field emission method was manufactured, but the ratio of 111 of the crystal plane of the metal deposition layer was 80%.

Example 5

In the same manner as in Example 1 to prepare a transfer film for forming a metal reflection film of the display device using the field emission method, except that the content of SiO _{2 in} the release layer composition is 9% by weight, polymethyl methacrylate acrylic resin It was made up to 91 weight%.

Comparative Example 1

In the same manner as in Example 1, a transfer film for forming a metal reflective film of a display device using a field emission method was manufactured, except that a metal deposition layer was deposited at a thickness of 3 optical density.

Comparative Example 2

In the same manner as in Example 1, a transfer film for forming a metal reflective film of a display device using a field emission method was manufactured, but 111% of the crystal surfaces of the metal deposition layer was 25%.

The conditions of Examples 1 to 5 and Comparative Examples 1 to 3 are summarized as shown in Table 1 below.

Example Comparative example One 2 3 4 5 One 2 Metal deposition layer Optical density 4.5 4.5 6 4.5 4.5 3 4.5 Crystal aspect ratio (p. 111) 55 55 55 80 55 55 20 Release layer Particle Content (%) 4.5 7 4.5 4.5 9 4.5 4.5

With respect to the transfer film prepared according to Examples 1 to 5 and Comparative Examples 1 to 2, the transferability, the brightness was measured in the following manner and the results are shown in Table 2 below.

1) Transcription

When the pressure of the laminator was 5 kg / cm 2, the temperature of the roll to be transferred and the temperature of the panel were measured.

2) luminance

The reflective film was transferred and decomposed and sintered at 450 ° C. for 30 minutes, and then evaluated using a magnetic spectrophotometer.

Example Comparative example One 2 3 4 5 One 2 Transcription Roll temperature (℃) 150 150 150 150 150 150 150 Panel temperature (℃) 45 45 45 45 45 45 45 Luminance 29.5 29.2 30.0 30.5 28.7 28.0 28.2

From the results of Table 2, in the case of the transfer film having a metal deposition layer having an optical density of 4 to 5 and the amount of 111 surfaces in the metal crystal structure of 30% or more with respect to 200 surfaces, the luminance is 28.7 to 30.5, which is not satisfied. It can be seen that the result can be improved compared to the luminance. In addition, it can be seen that the amount of the metal particles of the release layer is adjusted to a predetermined range for the most desirable brightness.

As described in detail above, the transfer film comprising a release layer, a metal deposition layer and an adhesive layer formed on the base film to improve brightness by appropriately adjusting the thickness according to the present invention, the field emission method in which the phosphor is formed by a transfer device Since the metal reflective film layer can be transferred onto the display device using the transfer device to form the metal reflective film layer, the improvement of the formation of the metal reflective film layer by deposition on the panel in the conventional batch type can improve the process and shorten the process time, and reduce the defective rate. Reduction can be achieved to significantly improve the productivity of the display device.

Claims (3)

It includes a base film, a release layer, a metal deposition layer and an adhesive layer for expressing the metal gloss, the metal deposition layer is formed with a thickness of 4 to 5 optical density, the amount of 111 side of the crystal structure of the metal 30 to 200 A transfer film for forming a metal reflective film of a display device using a field emission method configured to be more than%. According to claim 1, wherein the release layer is a methyl methacrylate acrylic resin having a glass transition temperature of 85 ~ 110 ℃, containing 3 to 8% of SiO ₂ particles, the secondary particle diameter of the particles is 0.1 ~ 2㎛. Transfer film for forming a metal reflective film of the display device using a field emission method characterized in that. Display device using a field emission method comprising a metal reflecting film formed from the transfer film of claim 1 or 2.

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