KR20070078410A - 반도체 집적회로의 내부전압 발생장치 - Google Patents
반도체 집적회로의 내부전압 발생장치 Download PDFInfo
- Publication number
- KR20070078410A KR20070078410A KR1020070059373A KR20070059373A KR20070078410A KR 20070078410 A KR20070078410 A KR 20070078410A KR 1020070059373 A KR1020070059373 A KR 1020070059373A KR 20070059373 A KR20070059373 A KR 20070059373A KR 20070078410 A KR20070078410 A KR 20070078410A
- Authority
- KR
- South Korea
- Prior art keywords
- voltage
- reference voltage
- temperature
- internal
- generating
- Prior art date
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (3)
- 반도체 집적회로에 있어서,온도변화에 따라 상승하거나, 온도변화에 따라 강하되는 기초 기준전압을 발생시키는 가변형 기준전압 발생수단;상기 가변형 기준전압 발생수단에서 출력된 기초 기준전압을 기설정된 적어도 하나 이상의 내부전압 생성용 기준전압으로 변환하여 출력하는 레벨 시프팅(Level Shifting) 수단; 및상기 레벨 시프팅 수단에서 출력된 적어도 하나 이상의 내부전압 생성용 기준전압을 각각 이용하여 내부전압을 발생시키는 내부전압 생성수단을 포함하는 반도체 집적회로의 내부전압 발생장치.
- 제 1 항에 있어서,상기 가변형 기준전압 발생수단은 온도증가에 따라 출력레벨이 상승되는 온도 비례형 기준전압 발생수단 또는 온도증가에 따라 출력레벨이 강하되는 온도 반비례형 기준전압 발생수단인 것을 특징으로 하는 반도체 집적회로의 내부전압 발생장치.
- 제 1 항에 있어서,온도변화에 따라 상승하거나, 온도변화에 따라 강하되는 기초 기준전압을 발 생시키는 제 2 가변형 기준전압 발생수단;상기 제 2 가변형 기준전압 발생수단에서 출력된 기초 기준전압을 기설정된 적어도 하나 이상의 내부전압 생성용 기준전압으로 변환하여 출력하는 제 2 레벨 시프팅(Level Shifting) 수단; 및상기 제 2 레벨 시프팅 수단에서 출력된 적어도 하나 이상의 내부전압 생성용 기준전압을 각각 이용하여 내부전압을 발생시키는 제 2 내부전압 생성수단을 더 포함함을 특징으로 하는 반도체 집적회로의 내부전압 발생장치.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070059373A KR100878314B1 (ko) | 2007-06-18 | 2007-06-18 | 반도체 집적회로의 내부전압 발생장치 |
Applications Claiming Priority (1)
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KR1020070059373A KR100878314B1 (ko) | 2007-06-18 | 2007-06-18 | 반도체 집적회로의 내부전압 발생장치 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020050085165A Division KR100738957B1 (ko) | 2005-09-13 | 2005-09-13 | 반도체 집적회로의 내부전압 발생장치 |
Publications (2)
Publication Number | Publication Date |
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KR20070078410A true KR20070078410A (ko) | 2007-07-31 |
KR100878314B1 KR100878314B1 (ko) | 2009-01-14 |
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KR1020070059373A KR100878314B1 (ko) | 2007-06-18 | 2007-06-18 | 반도체 집적회로의 내부전압 발생장치 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20220163622A (ko) | 2021-06-03 | 2022-12-12 | 추연희 | 원터치 길이 조절 삼각대 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100738957B1 (ko) * | 2005-09-13 | 2007-07-12 | 주식회사 하이닉스반도체 | 반도체 집적회로의 내부전압 발생장치 |
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- 2007-06-18 KR KR1020070059373A patent/KR100878314B1/ko active IP Right Grant
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20220163622A (ko) | 2021-06-03 | 2022-12-12 | 추연희 | 원터치 길이 조절 삼각대 |
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KR100878314B1 (ko) | 2009-01-14 |
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