KR20070073346A - Light emitting diode and method for manufacturing the same - Google Patents

Abstract

A light emitting diode and a manufacturing method thereof are provided to enhance light emitting efficiency of the LED(Light Emitting Diode) by reducing a surface resistance of the LED. A light emitting diode includes a TFT(Thin Film Transistor) unit(42), a first light emitting unit, a second light emitting unit, and a connector(C). The TFT unit is formed on a first substrate(40). A light emitting unit is formed between two electrodes on the first substrate. One of the two electrodes is connected to a drain(42c) of the TFT unit. A second light emitting unit is formed between two electrodes on a second substrate. One of the two electrodes includes a region, where a current intensity is partially increased. The connector is formed between the first and second light emitting units. The connector electrically couples one of the electrodes of the first light emitting unit with one of the electrodes of the second light emitting unit.

Description

Light Emitting Diode and Method for Manufacturing the Same

1 is a structural diagram of a conventional electroluminescent device.

2 is a partially enlarged view of a conventional electroluminescent device.

3 is a structural diagram of an electroluminescent device according to an embodiment of the present invention.

4 is a partially enlarged view of an electroluminescent device according to an embodiment of the present invention.

5a to 5e is a step-by-step manufacturing process of the electroluminescent device according to an embodiment of the present invention.

<Explanation of symbols on main parts of the drawings>

10 conventional electroluminescent device 12 substrate

14: thin film transistor portion 14a: source

14b: active layer 14c: drain

14d: gate electrode 14e: first metal electrode

14f: second metal electrode 16: gate insulating film

18: first interlayer insulating film 20: anode electrode

22: second interlayer insulating film 24: light emitting portion

24a: hole injection / transport layer 24b: light emitting layer

24c: electron injection / transport layer 26: cathode electrode

28: shield cap 40: the first substrate

42: thin film transistor section 42a: source

42b: active layer 42c: drain

42d: gate electrode 42e: first metal electrode

42f: second metal electrode 44: gate insulating film

46: first interlayer insulating film 48: anode electrode

50: second interlayer insulating film 52: first hole injection / transport layer

54: first light emitting layer 56: first electron injection / transport layer

58: first cathode electrode 70: second substrate

72: secondary cathode electrode 74: second cathode electrode

76: separator insulating film 78: second electron injection / transport layer

80: second light emitting layer 82: second hole injection / transport layer

84: second anode electrode C: connection electrode

L1: first light emitting part L2: second light emitting part

P: bulkhead S: spacer

The present invention relates to an electroluminescent device and a method of manufacturing the same.

In the following description, the organic light emitting layer is applied to the light emitting unit of the electroluminescent device in the prior art and the present invention.

The electroluminescent device injects electrons and holes into the light emitting layer from an electron injection electrode and a hole injection electrode, respectively, and excitons of the injected electrons and holes combine from the excited state. It is a self-luminous device that emits light when it falls to the ground state.

The electroluminescent device is classified into a passive matrix organic light emitting diode (PMOELD) and an active matrix organic light emitting diode (AMOELD) according to a driving method.

In addition, the EL device is classified into a top emission method and a bottom emission method according to a direction in which light is emitted.

Meanwhile, according to technological developments in fields such as a mobile terminal or a display device to which an electroluminescent device is applied, a double-sided light emitting display method that emits light to both sides without developing a direction in which light is emitted in one direction is also being developed. .

Hereinafter, the structure of a conventional electroluminescent device will be described with reference to the drawings.

1 is a structural diagram of a conventional electroluminescent element 10.

Referring to FIG. 1, in the conventional EL device 10, a light emitting part 24 including a hole injection / transport layer, a light emitting layer, and an electron injection / transport layer is formed on a substrate 12 on which a driving device is patterned. In addition, one side was sealed with a shield cap 28 provided with a getter.

Hereinafter, the structure of the conventional electroluminescent element 10 will be enlarged and described in detail.

FIG. 2 is an enlarged view of a portion of a conventional electroluminescent device, and shows an enlarged area A of FIG. 1.

Referring to FIG. 2, a semiconductor layer is selectively formed on the substrate 12, and an impurity such as B or P is added to a portion of the semiconductor layer 12, so that the source 14a, the active layer 14b, and the drain 14 of the thin film transistor unit 14 are formed. 14c was formed.

Subsequently, the gate insulating film 16 was formed on the source 14a, the active layer 14b, and the drain 14c described above, and the gate electrode 14d was formed thereon. The first interlayer insulating film 18 was formed in a covering structure. The anode electrode 20 was formed on the first interlayer insulating layer 18 so as to be classified based on the thin film transistor unit 14 described above. In addition, the first and second metal electrodes 14e and 14f are formed to expose the above-described source 14a and the drain 14c, respectively, wherein the second metal electrode 14f is electrically connected to the anode electrode 20. Was connected.

Subsequently, a second interlayer insulating film 22 was formed to cover a portion of the edge of the adjacent anode electrode 20 and the anode electrode 20, and the hole injection / transport layer 24a and the light emitting layer (top) were formed thereon. 24b) and the light emitting part 24 of the structure which the electron injection / transport layer 24c was laminated | stacked in order was formed, and the cathode electrode 26 was formed on it.

The conventional electroluminescent device as described above has only been possible to implement either a top emission type or a bottom emission type on a single substrate. Since the two separately manufactured panels to which the electroluminescent device is applied as shown in FIG. 1 must be configured to be in contact with the shield cap, the thickness of the display device is very thick.

As such, the conventional electroluminescent device has been subject to many limitations in terms of application of products to meet the needs of consumers due to problems against the light and small product trend.

In addition, the conventional electroluminescent device has to use a transparent electrode such as ITO according to the direction of light emission, so there is a problem that the surface resistance of the electrode is increased to significantly reduce the luminous efficiency.

In order to solve the above problems, an object of the present invention is to provide an electroluminescent device capable of emitting light on both sides with a single driving part and improving light and short size by improving the electrode structure of the device.

In addition, an object of the present invention is to provide an electroluminescent device having improved light emission efficiency by lowering the sheet resistance of the electrode of the electroluminescent device.

In another aspect, an object of the present invention is to provide a method for manufacturing an electroluminescent device capable of light emission on both sides with one driving unit, light and small and short, and greatly improve the light emitting efficiency as described above.

In order to achieve the above object, the present invention is a thin film transistor portion formed on the first substrate and the light emitting portion is formed between the two electrodes on the first substrate described above, any one of the two electrodes is the thin film transistor portion described above. The first light emitting unit is formed to be electrically connected to the drain, and the light emitting unit is formed between the two electrodes on the second substrate, wherein one of the two electrodes includes a region having a large current intensity. Among the electrodes of the first light emitting unit unit, which is formed between the second light emitting unit unit and the above-described first light emitting unit unit and the second light emitting unit unit, and electrically connected to the drain of the thin film transistor unit or the drain of the thin film transistor unit described above. Any and a connection including a connecting portion for electrically connecting any one of the two electrodes of the second light emitting unit described above It provides a light emitting device.

In the above-described electroluminescent device, an electrode formed closer to the second substrate of the two electrodes of the second light emitting unit described above is an electrode having light transmittance.

On the other hand, the region of the above-described second light emitting unit having a large current intensity is formed on the above-mentioned light transmitting electrode, it is characterized in that it is formed thicker than the neighboring electrode or doped with a material having a high electrical conductivity.

In another aspect, the region in which the current intensity of the second light emitting unit is large is formed in the above-mentioned light transmitting electrode, and the material is formed of two or more layers having different materials.

The above-described second substrate has a region where the light emitting portion of the second light emitting unit is formed, and a region where the light emitting portion adjacent to the second substrate of the second light emitting unit is formed relatively further to the second substrate. And a partition wall formed to distinguish the formation region of the second light emitting unit, wherein the region having the large current intensity of the second light emitting unit is formed corresponding to the position at which the partition wall is formed.

On the other hand, the above-mentioned thin film transistor portion is characterized in that the PMOS (P-channel Metal-Oxide Semiconductor) type.

In addition, the above-described light emitting unit is characterized in that the organic light emitting layer is applied.

In another aspect, in order to solve the above problems, the present invention provides a driving part forming step of forming a thin film transistor part on a first substrate, and the first light emitting device having a light emitting part formed between two electrodes on the first substrate. Forming a unit portion, the first light emitting unit portion forming step of electrically connecting any one of the two electrodes to the drain of the above-described thin film transistor portion, and the second light emission in the structure of the light emitting portion formed between the two electrodes on the second substrate A second light emitting unit part forming step of forming a unit part, and forming a region having a large current intensity partially on any one of the two electrodes described above; and a connecting part between the first light emitting unit part and the second light emitting unit part described above. And any one of a drain of the thin film transistor portion or an electrode of the first light emitting unit electrically connected to the drain of the thin film transistor portion, It provides a method of manufacturing an electroluminescent device comprising a connecting portion forming step of forming a connecting portion to electrically connect any one of the two electrodes of the second light emitting unit.

In the method of manufacturing the electroluminescent device described above, in the forming of the second light emitting unit part, an electrode formed closer to the second substrate is formed of a material having light transmittance.

Meanwhile, in the above-described second light emitting unit portion forming step, a region having a large current intensity of the second light emitting unit portion is formed on an electrode having light transmission, but is formed by forming an electrode thicker than a neighboring electrode or by doping with a material having a high electrical conductivity. Characterized in that.

In another aspect, in the above-described second light emitting unit portion forming step, a region having a large current intensity of the second light emitting unit portion is formed on the light transmitting electrode, and the electrode is divided into two or more layers by adopting different materials. Characterized in that.

In the above-described second light emitting unit part forming step, one electrode is formed on the second substrate, and a partition wall is selectively formed thereon, and then the light emitting part and the other electrode are sequentially stacked to form a second light emitting unit part. The barrier rib is formed at a position corresponding to a region where the current intensity of the second light emitting unit is large, and the above-described light emitting portion and the other electrode are formed on each of the adjacent light emitting portions and the electrode based on the partition wall. Characterized in that it is formed to distinguish from.

In the driving unit forming step, the thin film transistor may be formed of a P-channel metal-oxide semiconductor (PMOS) or an N-channel metal-oxide semiconductor (NMOS) type.

Further, in the above-described first and second light emitting unit portion forming step, the organic light emitting layer is adopted by applying to the light emitting portion.

In another aspect, the present invention to solve the above problems is a thin film transistor portion formed on the first substrate, and the light emitting portion is formed between the two electrodes on the first substrate described above any one of the two electrodes The first light emitting unit unit is formed to be electrically connected to the drain of the thin film transistor unit, and the light emitting unit is formed between two electrodes on the second substrate, wherein any one of the two electrodes is partially A second light emitting unit portion including a low resistance region having a lower resistance than the resistance of the electrode, and formed between the first light emitting unit portion and the second light emitting unit portion and electrically connected to the drain of the thin film transistor portion or the drain of the thin film transistor portion; Electrically connecting any one of the connected electrodes of the first light emitting unit and one of the two electrodes of the second light emitting unit Connection provides an electroluminescent device which comprises a.

In the above-described electroluminescent device, an electrode formed closer to the second substrate of the two electrodes of the second light emitting unit is an electrode having light transmittance.

The low resistance region of the second light emitting unit described above is formed on an electrode having light transmission.

In addition, the low-resistance region of the second light emitting unit is made of the same material as the light-transmissive electrode and formed thicker than its neighboring electrode or made of an electrode of the light-transmitting electrode on the periodic table and another metal material or any metal material on the periodic table. It is characterized by being formed of two or more layers.

The above-described second substrate is formed by forming the light emitting portion and the electrode adjacent to each other in the formation region of the light emitting portion of the second light emitting unit portion, and the formation region of the electrode formed relatively further to the second substrate among the two electrodes of the second light emitting unit portion. And a partition wall formed to distinguish the area, wherein the low-resistance area of the second light emitting unit unit is formed to correspond to a location where the partition wall is formed.

The thin film transistor unit may be a P-channel metal-oxide semiconductor (PMOS) or an N-channel metal-oxide semiconductor (NMOS) type.

In addition, the above-described light emitting unit is characterized in that the organic or inorganic light emitting layer is applied.

In another aspect, in order to solve the above problems, the present invention provides a driving unit forming step of forming a thin film transistor unit on the first substrate, and the light emitting unit is formed between the two electrodes on the first substrate described above. Forming a first light emitting unit, wherein a first light emitting unit is formed to electrically connect one of the two electrodes to a drain of the thin film transistor; and a light emitting unit is formed between two electrodes on a second substrate. A second light emitting unit portion forming step of forming a unit portion and forming a low resistance region having relatively low resistance in a portion of one of the two electrodes, and a connecting portion between the first light emitting unit portion and the second light emitting unit portion Any one of a drain of the thin film transistor unit or an electrode of the first light emitting unit unit electrically connected to the drain of the thin film transistor unit , Claim provides a method for producing light emitting device including a connecting portion forming step of forming a connecting portion to be connected to any one of the two parts of the light emitting units of two electrodes electrically.

In the method of manufacturing the electroluminescent device described above, in the forming of the second light emitting unit part, an electrode formed closer to the second substrate is formed of a material having light transmittance.

Meanwhile, in the above-described second light emitting unit portion forming step, the low-resistance region of the second light emitting unit portion is formed on the light transmitting electrode, but is formed by forming an electrode thicker than a neighboring electrode or by doping with a material having high electrical conductivity. It features.

In another aspect, in the above-described second light emitting unit portion forming step, a region having a large current intensity of the second light emitting unit portion is formed on the light transmitting electrode, and the electrode is divided into two or more layers by adopting different materials. Characterized in that.

In the above-described second light emitting unit part forming step, one electrode is formed on the second substrate, and a partition wall is selectively formed thereon, and then the light emitting part and the other electrode are sequentially stacked to form a second light emitting unit part. The barrier rib is formed at a position corresponding to the low resistance region of the second light emitting unit, and the above-described light emitting portion and the other electrode are separated from the adjacent light emitting portion and the formation region of the electrode based on the partition wall. It is characterized in that the formation.

In the driving unit forming step, the thin film transistor may be formed of a P-channel metal-oxide semiconductor (PMOS) or an N-channel metal-oxide semiconductor (NMOS) type.

In the above-described first and second light emitting unit portion forming step, the organic or inorganic light emitting layer may be adopted to the light emitting unit.

Hereinafter, an embodiment of the present invention will be described in detail with reference to the drawings. However, a case where the PMOS type thin film transistor unit is applied to the driving unit will be described with an example.

In addition, in the following description of the present invention, the light emitting unit should be understood as a configuration of a hole injection / transport layer, a light emitting layer, and an electron injection / transport layer.

3 is a structural diagram of an electroluminescent device according to an embodiment of the present invention.

Referring to FIG. 3, the electroluminescent device according to the embodiment of the present invention has a structure in which a driving unit and a light emitting unit are separately formed on two substrates to be bonded to each other, and the thin film transistor unit 42 is formed on the first substrate 40. The first light emitting part L1 is formed on the basis of the thin film transistor part 42 described above. In addition, a connection electrode C electrically connected to the drain 42c of the thin film transistor unit 42 is formed to protrude.

On the other hand, the partition P is formed on the second substrate 70 by being spaced apart from each other by a predetermined interval, and the second light emitting part L2 is formed to be divided by the partition P described above.

The first and second substrates 40 and 70 as described above are bonded to each other such that the connection electrode C and the second light emitting part L2 are electrically connected to each other.

Hereinafter, the structure of the electroluminescent device described above will be enlarged and described in detail.

FIG. 4 is an enlarged view of a portion of an electroluminescent device according to an embodiment of the present invention, and shows the enlarged region B of FIG.

Referring to FIG. 4, the source 42a, the active layer 42b, and the drain 42c of the thin film transistor unit 42 are selectively formed on the first substrate 40. The gate insulating film 44 is formed thereon, and the gate electrode 42d is formed separately from the source 42a, the active layer 42b, and the drain 42c described above. Subsequently, a first interlayer insulating film 46 is formed, and the first anode electrode 48 is formed on the first interlayer insulating film 46 so as to be divided based on the thin film transistor portion 42 described above. .

In addition, the spacer S protrudes from the thin film transistor unit 42 on the first interlayer insulating layer 46 described above.

In addition, the first and second metal electrodes 42e and 42f are formed to expose the source 42a and the drain 42b of the thin film transistor unit 42 described above, and the second metal electrode 42f is The above-mentioned anode electrode 48 is in contact with the above-described structure to cover the spacer (S).

Subsequently, the first hole injection / transport layer 52, the first light emitting layer 54, and the first electron injection / transport layer 56 are sequentially stacked to form the first light emitting part L1.

In addition, a first cathode electrode 58 is formed on the first light emitting part L1.

On the other hand, the auxiliary cathode electrode 72 is formed side by side on the second substrate 70 so that a predetermined distance from each other. The second cathode electrode 74 is formed on the above-described auxiliary cathode electrode 72, and the division insulating layer 76 is selectively formed at a position corresponding to the above-described auxiliary cathode electrode 72.

In addition, the partition P is formed on the division insulating layer 76 described above, and the second electron injection / transport layer 78, the second emission layer 80, and the second hole injection / transport layer 82 are sequentially formed. The second light emitting portion L2 is stacked.

In addition, a second cathode electrode 84 is formed on the second light emitting part L2 described above, and the first and second substrates are electrically connected to the connection electrode C and the second cathode electrode 84. (40, 70) are bonded.

Hereinafter, a step-by-step process of the electroluminescent device according to an embodiment of the present invention will be described with reference to the drawing.

5A to 5E are step-by-step manufacturing process diagrams of the electroluminescent device according to one embodiment of the present invention.

Referring to FIG. 5A, a semiconductor layer may be selectively formed on the first substrate 40 by forming a driving unit and a connecting electrode, and a thin film transistor unit 42 may be formed by adding impurities such as B or P to a portion of the semiconductor layer. Source 42a, active layer 42b, and drain 42c are formed separately.

Next, the gate insulating film 44 is formed on the above-mentioned source 42a, the active layer 42b, and the drain 42c, and the gate electrode 42d is formed separately.

The first anode electrode 48 is formed on the gate electrode 44 described above, and the first interlayer insulating film 46 is formed on the first interlayer insulating film 46. To form. In this case, the first anode electrode 48 is formed by depositing a transparent metal material such as, for example, ITO, IZO, or ITZO.

Subsequently, the spacers S are formed to have a predetermined size in a position adjacent to the thin film transistor portion 42, and the first and the first portions are formed so that the source 42a and the drain 42c of the thin film transistor portion 42 described above are respectively exposed. The second metal electrodes 42e and 42f are formed, but the second metal electrodes 42f are formed to contact the first anode electrode 48 in a structure covering the spacer S described above.

Referring to FIG. 5B, a first hole injection / transport layer 52, a first light emitting layer 54, and a first light emitting layer are formed on a first substrate 40 that has undergone the above-described driving unit and connection electrode forming step as the first light emitting unit forming step. The electron injection / transport layer 56 is sequentially stacked to form the first light emitting part L1, and finally, the first cathode electrode 58 is formed to complete the first substrate 40.

Hereinafter, the process of the 2nd board | substrate joined correspondingly with the above-mentioned 1st board | substrate is shown and demonstrated in detail.

Referring to FIG. 5C, in the forming of the cathode electrode, the auxiliary cathode electrode 72 may be selectively formed on the second substrate 70 to be spaced apart from each other by a predetermined interval. In this case, the auxiliary cathode electrode 72 is formed of a conductive metal material such as aluminum (Al) with a thickness of 50 nm or more to form a low resistance wire.

Subsequently, the second cathode electrode 74 is formed of a transparent material such as ITO or IZO, and if the second cathode electrode 74 is formed of the same metal material as that of the auxiliary cathode electrode 72 described above, Formed to be 30nm or less to allow light to pass through.

The structure of the cathode electrode portions 72 and 74 as described above has the advantage of significantly lowering the sheet resistance than in the prior art, thereby greatly improving the luminous efficiency of the device.

Meanwhile, the above-described auxiliary cathode electrode 72 is described as being formed of aluminum (Al), but the auxiliary cathode electrode 72 is formed of the same material as the second cathode electrode 74 or the second cathode electrode 74 on the periodic table. It may be formed from two or more layers of an alloy of a metal material different from the metal material of the periodic table.

Referring to FIG. 5D, the separation insulating layer 76 may be selectively disposed at a position corresponding to the above-described auxiliary cathode electrode 72 on the second substrate 70 which has undergone the above-described cathode electrode forming step as the second light emitting part forming step. It forms, and the partition P is formed on it.

Subsequently, the second electron injection / transport layer 78, the second light emitting layer 80, and the second hole injection / transport layer 82 are sequentially stacked to form a second light emitting part L2, and a second anode electrode thereon. 84 is formed to complete the second substrate 70. In this case, the second anode electrode 84 is formed by depositing a metal material having a high work function, such as Ag or Mg.

Referring to FIG. 5E, the above-described first and second substrates 40 and 70 are bonded together in a substrate bonding step, but the connection electrode C and the second anode electrode 84 are in contact with each other. The substrates 40 and 70 are electrically connected.

The electroluminescent device of the present invention according to the above-described device structure and manufacturing method further forms an auxiliary cathode electrode, and electrically connects the anode of the second substrate and the drain of the thin film transistor of the first substrate. As the structure is applied, bidirectional light emission is possible with one driving unit, and thus, the range of selection is significantly wider in terms of application of the display than the prior art, which was able to selectively emit light in only one direction, thereby increasing economic value.

In addition, when the conventional electroluminescent device is applied to a double-sided light emitting display, two separate panels are manufactured to be bonded together, so there is a limitation in terms of time required in manufacturing process and manufacturing cost or thickness of the product. Since the formation and passivation processes are simplified, the aforementioned process limitations can be overcome.

Ultimately, the present invention can overcome the problems of the prior art and achieve the desired object.

The present invention has been described as using a metal material having a high work function such as Ag or Mg when forming the second anode electrode, but the material is not limited thereto, and any one of ITO / Ag, Mg, Mg / Ag, and Ni is used. Can be adopted as one.

In addition, although the present invention has been described as forming the spacer on the first substrate in forming the connection electrode, the structure of the connection electrode is not limited thereto, and the spacer does not exist and the connection electrode may protrude. In addition, the connecting electrode may be formed to protrude on the second substrate, or may be formed on both sides of the first and second substrate to be electrically connected.

Further, in the present invention, the anode electrode, the light emitting layer, and the cathode electrode on the first substrate are described as being sequentially formed to form the first light emitting portion, but the structure of the first light emitting portion is not limited thereto, and the position of the anode electrode and the cathode electrode Can be changed.

In the above description of the prior art and the present invention, the organic light emitting device and the display device using the organic light emitting layer and the organic light emitting layer are applied to the light emitting unit. For example, the present invention is not limited thereto. It should also be understood as the category of electroluminescent displays (LEDs) available.

Although the embodiments of the present invention have been described above with reference to the accompanying drawings, the above-described technical configuration of the present invention may be embodied in other specific forms by those skilled in the art to which the present invention pertains without changing its technical spirit or essential features. It will be appreciated that it may be practiced. Therefore, the embodiments described above are to be understood as illustrative in all respects and not as restrictive.

In addition, the scope of the present invention is shown by the claims below, rather than the above detailed description. Also, it is to be construed that all changes or modifications derived from the meaning and scope of the claims and their equivalent concepts are included in the scope of the present invention.

As described above, the present invention can overcome the limitations in terms of processing time, manufacturing cost and thickness of the product by providing an improved structure of the electroluminescent device and a method of manufacturing the same. It is possible to implement a light emitting device capable of light and short and small.

In addition, the present invention can provide an electroluminescent device in which the surface resistance of the electrode of the device is lowered to greatly improve the luminous efficiency.

Therefore, the present invention can overcome the limitations in terms of product application and luminous efficiency of the device, and can achieve its desired purpose.

Claims (28)

A thin film transistor unit formed on the first substrate; A first light emitting unit unit having a light emitting unit formed between two electrodes on the first substrate such that any one of the two electrodes is electrically connected to a drain of the thin film transistor unit; A second light emitting unit unit having a structure in which a light emitting unit is formed between two electrodes on a second substrate, wherein one of the two electrodes includes a region having a large current intensity; Any one of an electrode formed between the first light emitting unit part and the second light emitting unit part and electrically connected to the drain of the thin film transistor part or the drain of the thin film transistor part; Electroluminescent device comprising a connection for electrically connecting any one of the two electrodes of the negative. The method of claim 1, The electrode of the second light emitting unit of the two electrodes formed relatively closer to the second substrate is an electroluminescent device, characterized in that the electrode having light transmission. The method of claim 2, The region of the second light emitting unit having a large current intensity is formed in the electrode having the light transmission, and formed thicker than the neighboring electrode or doped with a material having a high electrical conductivity. The method of claim 2, And a region having a large current intensity of the second light emitting unit is formed on the light transmitting electrode, wherein the material is formed of two or more layers having different materials. The method according to claim 3 or 4, The second substrate may include a light emitting portion and an electrode adjacent to each other, a region where a light emitting portion of the second light emitting unit is formed, and a formation region of an electrode formed relatively far from the second substrate among two electrodes of the second light emitting unit. A partition wall formed to distinguish the formation region of the And an area having a large current intensity of the second light emitting unit is formed corresponding to a position where the partition wall is formed. The method of claim 1, The thin film transistor unit is a PMOS (P-channel Metal-Oxide Semiconductor) type electroluminescent device, characterized in that. The method of claim 1, Electroluminescent device, characterized in that the organic light emitting layer is applied to the light emitting portion. A driver forming step of forming a thin film transistor on the first substrate; Forming a first light emitting unit unit having a light emitting unit formed between two electrodes on the first substrate, wherein forming a first light emitting unit unit electrically connecting one of the two electrodes to a drain of the thin film transistor unit; ; Forming a second light emitting unit unit having a structure in which a light emitting unit is formed between two electrodes on a second substrate, wherein a second light emitting unit unit forming a region having a large current intensity in one of the two electrodes; A connection part is formed between the first light emitting unit part and the second light emitting unit part, and either one of a drain of the thin film transistor part or an electrode of the first light emitting unit part electrically connected to the drain of the thin film transistor part, And a connecting part forming step of forming the connecting part so as to electrically connect any one of two electrodes of the light emitting unit part. 2. The method of claim 8, In the forming of the second light emitting unit portion, the method of manufacturing an electroluminescent device, characterized in that for forming an electrode that is relatively closer to the second substrate made of a light transmitting material. The method of claim 9, In the forming of the second light emitting unit part, a region having a large current intensity of the second light emitting unit part is formed on the light transmitting electrode, and is formed by forming an electrode thicker than a neighboring electrode or by doping with a material having a high electrical conductivity. Method of manufacturing an electroluminescent device, characterized in that. The method of claim 9, In the forming of the second light emitting unit part, a region having a large current intensity of the second light emitting unit part is formed on the light transmitting electrode, and the electrode is divided into two or more layers by adopting different materials. A method of manufacturing an electroluminescent device. The method according to claim 10 or 11, wherein In the forming of the second light emitting unit part, one electrode is formed on the second substrate, and a partition wall is selectively formed thereon, and then the light emitting part and the other electrode are sequentially stacked to form a second light emitting unit part. , The barrier rib is formed at a position corresponding to a region having a large current intensity of the second light emitting unit, and the light emitting portion and the other electrode are formed on each of the neighboring light emitting portions and the electrode based on the partition wall. A method of manufacturing an electroluminescent device, characterized in that formed to be distinguished from the formation region. The method of claim 8, In the driving unit forming step, the thin film transistor is formed of a PMOS (P-channel Metal-Oxide Semiconductor) type manufacturing method of the electroluminescent device. The method of claim 8, In the forming of the first and second light emitting unit portion, the method of manufacturing an electroluminescent device, characterized in that to apply the organic light emitting layer to the light emitting portion. A thin film transistor unit formed on the first substrate; A first light emitting unit unit having a light emitting unit formed between two electrodes on the first substrate such that any one of the two electrodes is electrically connected to a drain of the thin film transistor unit; A second light emitting unit unit having a structure in which a light emitting unit is formed between two electrodes on a second substrate, wherein one of the two electrodes partially includes a low resistance region having a lower resistance than the resistance of the two electrodes; ; Any one of an electrode formed between the first light emitting unit part and the second light emitting unit part and electrically connected to the drain of the thin film transistor part or the drain of the thin film transistor part; Electroluminescent device comprising a connection for electrically connecting any one of the two electrodes of the unit. The method of claim 15, The electrode of the second light emitting unit of the two electrodes formed relatively closer to the second substrate is an electroluminescent device, characterized in that the electrode having light transmission. The method of claim 16, And the low resistance region of the second light emitting unit is formed on the light transmitting electrode. The method of claim 17, The low-resistance region of the second light emitting unit is made of the same material as the light-transmissive electrode, is formed thicker than its neighboring electrode, or is a metal material different from the light-transmissive electrode on the periodic table, or any metal material on the periodic table. Electroluminescent device, characterized in that formed by two or more layers of alloys. The method according to any one of claims 15 to 18, The second substrate may include a light emitting portion adjacent to a region where a light emitting portion of the second light emitting unit is formed, and a region where an electrode is formed farther from the two substrates of two electrodes of the second light emitting unit; A partition wall formed to distinguish the formation region of the electrode, The low resistance region of the second light emitting unit is formed in correspondence with the position where the partition wall is formed. The method of claim 15, The thin film transistor unit is a PMOS (P-channel Metal-Oxide Semiconductor) or NMOS (N-channel Metal-Oxide Semiconductor) type electroluminescent device, characterized in that. The method of claim 15, Electroluminescent device, characterized in that the organic or inorganic light emitting layer is applied to the light emitting portion. A driver forming step of forming a thin film transistor on the first substrate; Forming a first light emitting unit unit having a light emitting unit formed between two electrodes on the first substrate, wherein forming a first light emitting unit unit electrically connecting one of the two electrodes to a drain of the thin film transistor unit; ; A second light emitting unit that forms a second light emitting unit unit having a structure in which a light emitting unit is formed between two electrodes on a second substrate, and forms a low resistance region having a relatively low resistance in a portion of one of the two electrodes. Forming part; A connection part is formed between the first light emitting unit part and the second light emitting unit part, and either one of a drain of the thin film transistor part or an electrode of the first light emitting unit part electrically connected to the drain of the thin film transistor part, And a connecting part forming step of forming the connecting part so as to electrically connect any one of two electrodes of the light emitting unit part. 2. The method of claim 22, In the forming of the second light emitting unit portion, the method of manufacturing an electroluminescent device, characterized in that for forming an electrode that is relatively closer to the second substrate made of a light transmitting material. The method of claim 23, wherein In the forming of the second light emitting unit part, the low resistance region of the second light emitting unit part is formed on the light transmitting electrode, and is formed by forming an electrode thicker than a neighboring electrode or by doping with a material having a high electrical conductivity. Method of manufacturing an electroluminescent device characterized in that. The method of claim 23, wherein In the forming of the second light emitting unit part, a region having a large current intensity of the second light emitting unit part is formed on the light transmitting electrode, and the electrode is divided into two or more layers by adopting different materials. A method of manufacturing an electroluminescent device. The method of claim 24 or 25, In the forming of the second light emitting unit part, one electrode is formed on the second substrate, and a partition wall is selectively formed thereon, and then the light emitting part and the other electrode are sequentially stacked to form a second light emitting unit part. , The barrier rib is formed at a position corresponding to the low resistance region of the second light emitting unit, and the light emitting portion and the other electrode are formed in the light emitting portion and the electrode, each forming region of which is adjacent to the barrier rib. Method for manufacturing an electroluminescent device, characterized in that formed to be distinguished from the area. The method of claim 22, In the driving unit forming step, the thin film transistor is formed of a PMOS (P-channel Metal-Oxide Semiconductor) or N-MOS (N-channel Metal-Oxide Semiconductor) type manufacturing method of the electroluminescent device. The method of claim 22, In the forming of the first and second light emitting unit portion, a method of manufacturing an electroluminescent device, characterized in that the organic or inorganic light emitting layer is applied to the light emitting portion.

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