KR20070068095A - An array substrate for in-plane switching mode lcd and method of fabricating of the same - Google Patents

Abstract

An IPS(In Plane Switching) mode array substrate and a manufacturing method thereof are provided to design an area for inducing the fringe field and IPS electric field between a common electrode and a pixel electrode, thereby implementing the high brightness. A gate line(204) and a data line(222) are crossly formed on a substrate and define a pixel area. A TFT(Thin Film Transistor) is located at the crossing point of the gate line and data line. A transparent common electrode(202) is located at the pixel area and constructed by a plate shape corresponding to a portion of the pixel area and plural rod shapes corresponding to the remaining portion of the pixel area. A transparent pixel electrode(228) is located at the upper portion of the common electrode and constructed by plural horizontal members and a vertical member for connecting the plural horizontal members as one group at the center of the pixel area.

Description

An array substrate for in-plane switching mode LCD and method of fabricating of the same}

1 is a cross-sectional view schematically showing a part of a general transverse electric field type liquid crystal display device,

2 is a plan view showing a part of an array substrate for a transverse electric field type liquid crystal display device according to a first example of the related art;

3 is an enlarged plan view of one pixel of an array substrate for a transverse electric field type liquid crystal display device according to a second conventional example;

4A and 4B are cross-sectional views taken along lines III-III and IV-IV of FIG. 3,

5 is an enlarged plan view of one pixel of an array substrate for a transverse electric field type liquid crystal display device according to a first embodiment of the present invention;

6 is a cross-sectional view taken along the line VI-VI of FIG. 5,

7 is an enlarged plan view of one pixel of an array substrate for a transverse electric field type liquid crystal display device according to a second embodiment of the present invention;

FIG. 8 is a cross-sectional view taken along the line VIII-VIII of FIG. 7;

9A to 9F and FIGS. 10A to 10F are cross-sectional views taken along the lines VIII-VIII and VIII-V of Fig. 7, and according to the process sequence of the present invention.

<Brief description of the main parts of the drawing>

200: substrate 202: common electrode

204: gate wiring 206: gate electrode

208: common wiring 212: active layer

216: source electrode 218: drain electrode

220: extension portion of the drain electrode 228: pixel electrode

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device, and more particularly, to an array substrate for a transverse electric field type liquid crystal display device capable of realizing high brightness and high image quality and improving a viewing angle, and a manufacturing method thereof.

In general, the driving principle of the liquid crystal display device uses the optical anisotropy and polarization of the liquid crystal. Since the liquid crystal is thin and long in structure, the liquid crystal has directivity in the arrangement of molecules, and the direction of the molecular arrangement can be controlled by artificially applying an electric field to the liquid crystal.

Accordingly, if the molecular arrangement direction of the liquid crystal is arbitrarily adjusted, the molecular arrangement of the liquid crystal is changed, and light is refracted in the molecular arrangement direction of the liquid crystal due to optical anisotropy to express image information.

Currently, an active matrix liquid crystal display device (AM-LCD: abbreviated as an active matrix LCD, abbreviated as a liquid crystal display device) in which a thin film transistor and pixel electrodes connected to the thin film transistor are arranged in a matrix manner has the best resolution and video performance. It is attracting attention.

The liquid crystal display includes a color filter substrate (upper substrate) on which a common electrode is formed, an array substrate (lower substrate) on which a pixel electrode is formed, and liquid crystal filled between upper and lower substrates. The liquid crystal is driven by an electric field applied up and down by the pixel electrode, so that the characteristics such as transmittance and aperture ratio are excellent.

However, the liquid crystal drive by the electric field applied up-down has a disadvantage that the viewing angle characteristics are not excellent. Therefore, new techniques have been proposed to overcome the above disadvantages. The liquid crystal display device to be described below has an advantage of excellent viewing angle characteristics by a liquid crystal driving method using a transverse electric field.

Hereinafter, a general transverse electric field type liquid crystal display device will be described in detail with reference to FIG. 1.

1 is an enlarged cross-sectional view illustrating a cross section of a general transverse electric field type liquid crystal display device.

As shown, a general transverse electric field type liquid crystal display device (B) is composed of a color filter substrate B1 and an array substrate B2 facing each other, and a liquid crystal layer (B1) between the color filter substrate and the array substrates B1 and B2. LC) is intervened.

The array substrate B2 includes a thin film transistor T, a common electrode 30, and a pixel electrode 32 for each of the plurality of pixels P defined in the transparent insulating substrate 10.

The thin film transistor T may include a gate electrode 14, a semiconductor layer 18 having an insulating layer 16 disposed on the gate electrode 14, and a source configured to be spaced apart from each other on the semiconductor layer 18. And drain electrodes 20 and 22.

The common electrode 30 and the pixel electrode 32 are formed of a transparent material and are spaced apart from each other in parallel on the same substrate 10.

Although not shown, a gate line (not shown) extending along one side of the pixel P and a data line (not shown) extending in a direction perpendicular thereto are formed, and a voltage is applied to the common electrode 30. The common wiring (not shown) to apply is comprised.

The color filter substrate B1 includes a black matrix 42 formed on one surface of the transparent insulating substrate 40 corresponding to the gate wiring (not shown), the data wiring (not shown), and the thin film transistor T. Color filters 44a and 44b are formed corresponding to the pixels P. As shown in FIG.

The liquid crystal layer LC is operated by the horizontal electric field 45 of the common electrode 30 and the pixel electrode 32.

Hereinafter, with reference to FIG. 2, the structure of the array substrate which comprises a transverse electric field type liquid crystal display device is demonstrated.

2 is a plan view schematically illustrating a configuration of an array substrate for a transverse electric field type liquid crystal display device according to a first example.

As shown in the drawing, the gate wiring 12 extending in one direction on the substrate 10 and the data wiring 24 defining the pixel region P by crossing the gate wiring 12 perpendicularly are formed. .

In addition, the common wiring 15 is formed to cross the pixel region P while being spaced in parallel with the gate wiring 12.

At the intersection of the gate wiring 12 and the data wiring 24, the gate electrode 14 connected to the gate wiring 12, the semiconductor layer 18 on the gate electrode 14, and the semiconductor layer 18 The thin film transistor T including the upper source electrode 20 and the drain electrode 22 is configured.

In the pixel region P, a common electrode 30 extending vertically to the pixel region P while contacting the common wiring 15 is formed, and the common electrode 30 is in contact with the drain electrode 22. The pixel electrode 32 is extended to a position spaced in parallel with ().

 In the above-described configuration, the common electrode 30 and the pixel electrode 32 are formed as transparent electrodes in order to ensure luminance, but in fact, the common electrode 30 and the pixel electrode 32 are both transparent so that the electrode itself is formed. It cannot be used as an opening area.

Because, in the general transverse electric field structure, the range of the electric field generated between the two electrodes 30 and 32 only covers the edge portions of the two electrodes 30 and 32, so that only the edge portions of the two electrodes 30 and 32 are applicable. It is used as an opening area. Therefore, it is still insufficient in terms of luminance.

Proposed to improve this problem, the array substrate for the transverse electric field type liquid crystal display device of FIG.

3 is an enlarged plan view showing one pixel of an array substrate for a transverse electric field type liquid crystal display device according to a second conventional example.

3 is a structure in which the interval between the pixel electrodes 78 is narrower than the general configuration, and the plate-shaped common electrode 58 is formed below the pixel electrode 78. Such a configuration can improve luminance by precisely controlling the liquid crystal positioned above the pixel electrode 78 by a fringe field generated between the pixel electrode 78 and the common electrode 58. It can be effective.

Hereinafter, the configuration of FIG. 3 will be described in detail. The gate wiring 54 positioned in the first direction of the transparent insulating substrate 50 and the data wiring 72 positioned in the second direction crossing the gate wiring 54 are provided. It is composed.

At the intersection of the gate line 54 and the data line 72, a gate electrode 56 connected to the gate line 54, an active layer 62 and an ohmic contact layer on the gate electrode 56 are formed. And a thin film transistor T including a source electrode 68 positioned on the active layer 62 and in contact with the data line 72 and a drain electrode 70 spaced apart from the predetermined distance.

A plate-shaped common electrode 58 is formed in the pixel region P defined by the intersection of the gate line 54 and the data line 72, and a plurality of vertical portions are spaced apart from the upper portion of the common electrode 58. The pixel electrode 78 patterned is constituted.

In the above-described configuration, a liquid crystal layer (not shown) is driven by an electric field generated between the lower common electrode 52 and the upper pixel electrode 78, and between the common electrode 58 and the pixel electrode 78. The electric field causes the electric field to operate normally even between the region between the pixel electrodes 78 and the liquid crystal (not shown) positioned at the center of the pixel electrode 78.

Therefore, unlike the first example of the related art, a high luminance can be obtained due to the effect of expanding the transmission region.

Hereinafter, a cross-sectional structure of an array substrate for a transverse electric field type liquid crystal display device according to a second conventional example will be described with reference to the drawings.

4A and 4B are cross-sectional views taken along line III-III and IV-IV of FIG. 3.

As illustrated, a pixel region P is defined in the substrate 50, and a thin film transistor T is formed at one side of the pixel region P. As shown in FIG.

Data lines 72 are formed at both sides of the pixel region P, and a plate-shaped common electrode 52 is formed of the first layer of the substrate 50 corresponding to the pixel region P. The common electrode A plurality of rod-shaped pixel electrodes 78 are formed on the upper portion of the 52 with the gate insulating film 58 and the protective film 74 interposed therebetween.

However, the arrangement according to the second example of the related art can improve the viewing angle characteristics compared to the first example because the pixel electrodes 78 are arranged in the vertical direction, but are still in the left, right, up, and down directions. Color inversion occurs, limiting the further improvement of the viewing angle.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and the first object is to improve the viewing angle by configuring the pixel electrode in the horizontal direction, and in forming the common electrode and the pixel electrode, the plate-shaped common electrode and the rod-shaped pixel It is a second object of the present invention to realize a high brightness by mixing a fringe field region in which an electrode is designed to induce a fringe field, and a lateral field region inducing a transverse electric field by forming a rod-shaped common electrode and a pixel electrode.

An array substrate for a transverse electric field type liquid crystal device according to the present invention for achieving the above object is a substrate; Gate wiring and data wiring crossing the substrate to define pixel regions; A thin film transistor positioned at an intersection point of the gate line and the data line; A transparent common electrode positioned in the pixel region, configured in a plate shape corresponding to a part of the pixel region, and configured in a plurality of rod shapes corresponding to the remaining region; And a transparent pixel electrode disposed on the common electrode, the transparent pixel electrode including a plurality of horizontal parts and a vertical part connecting the horizontal parts to one at the center of the pixel area.

A common wiring is formed simultaneously with the gate wiring and includes a common wiring in contact with one side of the common electrode.

A horizontal portion of the pixel electrode spaced apart in parallel between the rod-shaped common electrodes may be configured.

The separation distance between the rod-shaped common electrodes and the pixel electrode (horizontal portion) spaced apart in parallel with the rod-shaped common electrode may be 18 μm to 22 μm.

A distance between the rod-shaped common electrode and the pixel electrode (horizontal portion) spaced from the bar-shaped common electrode is characterized in that composed of 2 to 4 in the pixel region.

A fringe field is generated between the plate-shaped common electrode and the horizontal portion of the pixel electrode, and a transverse electric field is generated between the rod-shaped common electrode and the horizontal portion of the pixel electrode.

According to an aspect of the present invention, there is provided a method of manufacturing an array substrate for a transverse electric field type liquid crystal display device, including: defining a pixel area on the substrate; Gate wiring and data wiring intersecting the one side and the other side of the pixel region; Forming a thin film transistor at an intersection point of the gate line and the data line; Forming a transparent common electrode positioned in the pixel area, formed in a plate shape corresponding to a part of the pixel area, and formed in a plurality of rod shapes corresponding to the remaining area; And forming a transparent pixel electrode positioned on the common electrode and formed of a plurality of bar shapes positioned in a horizontal direction.

According to another aspect of the present invention, there is provided a method of manufacturing an array substrate for a transverse electric field type liquid crystal display device, including: defining a pixel area on a substrate; Forming a transparent common electrode positioned in the pixel area, formed in a plate shape corresponding to a part of the pixel area, and formed in a plurality of rod shapes corresponding to the remaining area; Forming a gate wiring positioned on one side of the pixel region, a gate electrode extending from the gate wiring, and a common wiring in contact with the common electrode; Forming an active layer and an ohmic contact layer on the gate electrode with a gate insulating film interposed therebetween; Forming a source electrode and a drain electrode spaced apart from and in contact with the ohmic contact layer, and a data line connected to the source electrode and positioned in a direction crossing the gate line; Forming a protective film exposing the drain electrode on an entire surface of the substrate; And forming a plurality of horizontal parts in contact with the drain electrode and positioned in the pixel area, and a pixel electrode including a first vertical part and a second vertical part connecting one side and the other side of the horizontal part, respectively.

 Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

First Embodiment

A feature of the first embodiment of the present invention is that the common electrode is formed in a plate shape, and a bar-shaped pixel electrode is formed in the horizontal direction on the plate-shaped common electrode to improve the viewing angle.

5 is an enlarged plan view of one pixel of an array substrate for a transverse electric field type liquid crystal display device according to a first exemplary embodiment of the present invention.

As shown in the drawing, the gate wiring 104 is formed on the substrate 100 in the first direction, and the data wiring 122 is formed in the second direction crossing the gate wiring 104.

In this case, an area defined by the intersection of the gate line 104 and the data line 122 is referred to as a pixel area P.

The thin film transistor T including the gate electrode 106, the active layer 112 and the ohmic contact layer, and the source and drain electrodes 116 and 118 is disposed at the intersection of the gate line 104 and the data line 122. Make up.

In the pixel region P, a plate-shaped common electrode 102 and a rod-shaped pixel electrode 128 are formed.

The pixel electrode 126 is disposed on both sides of the pixel region P, and spaced apart from the data line 122 in parallel with the first vertical portion 128b and the second vertical portion 128c, and the first and second portions. 2 consists of a plurality of horizontal portions (128a) connecting the vertical portions (128b, 128c).

In this case, the distance between the horizontal portions 128a of the pixel electrode 128 is designed to be narrowly spaced so that the liquid crystal located at the center of the common electrode 102 between the horizontal portions 128a can also operate normally. do.

As described above, when the pixel electrode 128 is configured in the horizontal direction and further tilted (approximately 0 degrees to 45 degrees), color compensation for up, down, left, and right occurs to improve the viewing angle. have.

However, in the above-described configuration, since most of the light irradiated to the lower backlight (not shown) must pass through the stacked structure of the lower common electrode or the common electrode and the upper pixel electrode in addition to the insulating film, such a structure is provided. It is working as a limit to improve the brightness.

This will be described below with reference to FIG. 6.

6 is a cross-sectional view taken along the line VI-VI of FIG. 5.

As shown, in the array substrate for a transverse electric field type liquid crystal display device according to the present invention, the plate-shaped common electrode 102 is positioned on the substrate 100 corresponding to the pixel region P, and both sides of the pixel region P are disposed. The data line 122 is located in the center.

A plurality of rod-shaped pixel electrodes 128c are formed on the common electrode 102 with the gate insulating layer 110 and the passivation layer 124 interposed therebetween.

Such a configuration induces a fringe field (FF) between the common electrode 102 and the pixel electrode 128 so that a liquid crystal (not shown) positioned above the pixel electrode 128 may operate normally. Thus, there is an advantage that can enlarge the opening area.

Nevertheless, the above configuration has a limit in improving the brightness.

This is because the above-described structure has to pass through the lower common electrode 102 or both the common electrode 102 and the pixel electrode 128 light emitted from the lower backlight (not shown).

That is, even though the common electrode 102 and the pixel electrode 128 are made of a transparent material, the commonly known indium oxide-based transparent conductive material has a transmittance of less than 80%. When the light passes through the pixel electrode 128 twice, light loss occurs, and the transmittance of the light falls far below the 80%. Furthermore, since the overlapping area of the common electrode 102 and the pixel electrode 128 exceeds 70% of the single pixel area, the light loss is enormous.

Therefore, the above-described structure also has a limit in improving luminance.

Hereinafter, the second embodiment of the present invention proposes a structure of an array substrate for a transverse electric field type liquid crystal display device for solving the above problems.

Second Embodiment

According to the second embodiment of the present invention, in forming an array substrate for a transverse electric field type liquid crystal display device, a fringe field region including a common electrode in a plate shape and a pixel electrode in a rod shape, and the common electrode and the pixel electrode It is characterized by designing a mixture of the transverse electric field area composed of all rods.

7 is an enlarged plan view of one pixel of an array substrate for a transverse electric field type liquid crystal display device according to a second exemplary embodiment of the present invention.

As shown, the gate line 204 is formed on the substrate 200 in the first direction, and the data line 222 is formed in the second direction crossing the gate line 204.

In this case, an area defined by the gate line 204 and the data line 222 intersect is referred to as a pixel area P. In this case, the pixel area P may be defined as a transverse electric field area AI and a fringe field area AF.

Meanwhile, a thin film transistor T including a gate electrode 206, an active layer 212 and an ohmic contact layer, and source and drain electrodes 216 and 218 at an intersection point of the gate line 204 and the data line 222. ).

In addition, an extension part 220 extending from the drain electrode 218 to a portion of the gate line 204 as a first electrode on one side of the pixel region P, and above the first electrode 204. A storage capacitor Cst is formed as a second electrode.

In the pixel region P, a common electrode 202 and a pixel electrode 228 are formed.

The common electrode is configured by mixing a plate-shaped common electrode 202a and a rod-shaped common electrode 202b, and the pixel electrodes are positioned on both sides of the plurality of horizontal portions 228a and the horizontal portions and connect them together. It consists of the 1st vertical part 228b and the 2nd vertical part 228c.

As described above, the configured common electrode 202 and the pixel electrode 228 are configured as follows for the transverse electric field area AI and the fringe field area AF.

That is, the transverse electric field area AI includes the common electrode 202 and the pixel electrode 228 in a rod shape, and the common field 202a has the plate shape in the fringe field area AI. The pixel electrode 228 is formed in a rod shape.

In this case, when the distance between the common electrode 202b and the pixel electrode 228a of the transverse electric field area AF is designed to be within a range in which an electric field generated between the two electrodes can affect the edges of the two electrodes 202b and 228a. do. That is, it is comprised so that it may belong to 18 micrometers-22 micrometers of distances between the common electrodes and pixel electrodes comprised in the transverse electric field area | region.

 Therefore, since light passing through the transverse electric field area AI passes only the insulating film or only the pixel electrode 228a or the common electrode 202b, light loss is low and high luminance can be realized.

This will be described below with reference to the cross-sectional view.

8 is a cross-sectional view taken along the line VIII-VIII of FIG. 7.

As shown, in the array substrate for a transverse electric field type liquid crystal display device according to the second embodiment of the present invention, a plate-shaped common electrode 202 is positioned on a substrate 200 corresponding to the pixel region P, and the pixel region is disposed. Data wires 222 are located on both sides of (P).

The pixel electrode 228a and the common electrode 202b located in the transverse electric field area AI of the pixel area P are formed in a bar shape, and the common electrode 202a located in the fringe field area AF is formed of a plate. In the shape, the pixel electrode 228a has a bar shape.

As illustrated, light passing through the transverse electric field area AI passes through the common electrode 202b or the pixel electrode 228a or passes through the insulating film 210.

Accordingly, the region where the insulating film is present or the region where only the common electrode or the pixel electrode is located will exhibit high luminance, as compared with a region where the common electrode 202b and the pixel electrode 228a are overlapped up and down in the same region.

As a result, there is an advantage that the high brightness effect can be further enhanced by designing the transverse electric field region partially between the fringe field regions AI.

Hereinafter, a manufacturing method of an array substrate for a transverse electric field type liquid crystal display device according to the present invention will be described with reference to the process drawings.

9A to 9F and FIGS. 10A to 10F are cross-sectional views taken along the line VIII-VIII and VIII-V of Fig. 7, and according to the process sequence of the present invention.

As shown in FIGS. 9A and 10A, a plurality of pixel areas P and a fringe field area AF and a transverse electric field area AI are defined for each pixel area P on the substrate 100.

Depositing one selected from a group of transparent conductive metals including indium tin oxide (ITO) and indium zinc oxide (IZO) on the substrate 100 in which the plurality of regions P, AF, and AI are defined By patterning, a plate-shaped common electrode 202 is formed in the pixel region P. As shown in FIG.

At this time, the common electrode 202a of the common electrode 202 corresponding to the fringe field region AF is formed in a plate shape, and the common electrode 202b corresponding to the transverse electric field area AI has a rod shape. The separation distance between the rod-shaped common electrodes 202b is preferably in the range of 18 µm to 22 µm.

9B and 10B, aluminum (Al), aluminum alloy (AlNd), tungsten (W), copper (Cu), and molybdenum are formed on the entire surface of the substrate 200 on which the common electrodes 202a and 202b are formed. One selected from the group of conductive metals including (Mo), chromium (Cr), molybdenum (MoW), and the like is deposited and patterned to form the gate wiring 204 along the first side of the pixel region P. . In this case, a portion of the gate wiring 204 may be used as the gate electrode 206, or may protrude and extend from the gate wiring 204 to form the gate electrode 206.

At the same time, one side of the common electrode 202 is formed to form a common wiring 208 extending in contact with it.

9C and 10C, silicon nitride (SiN _x ) and silicon oxide (SiO ₂ ) are formed on the entire surface of the substrate 200 on which the gate wiring 204, the gate electrode 206, and the common wiring 208 are formed. The gate insulating layer 210 is formed by depositing one or more materials selected from the group of inorganic insulating materials, including

Next, a pattern is formed by successively depositing pure amorphous silicon (a-Si: H) and amorphous silicon (n + a-Si: H) containing impurities on the entire surface of the substrate 200 on which the gate insulating layer 210 is formed. An island-shaped active layer 212 and an ohmic contact layer 214 are formed on the gate insulating layer 210 on the gate electrode 206.

As shown in FIGS. 9D and 10D, aluminum (Al), aluminum alloy (AlNd), chromium (Cr), and molybdenum are formed on the entire surface of the substrate 200 on which the active layer 212 and the ohmic contact layer 214 are formed. (Mo), molybdenum (MoW), tungsten (W), copper (Cu) and the like, and depositing and patterning one or more selected from the group of conductive metals, and spaced apart on top of the ohmic contact layer 214 The data line 222 is formed in the direction in which the source electrode 216 and the drain electrode 218 are in contact with the source electrode 216 and intersect the gate line 204.

In this case, a drain electrode extension part 220 extending from the drain electrode 218 to the gate wiring 204 is formed.

As shown in FIGS. 9E and 10E, as described above on the entire surface of the substrate 200 on which the source and drain electrodes 216 and 218 are formed, an inorganic insulating film having a low dielectric constant or an organic insulating film may be deposited or coated in some cases. The protective film 224 is formed.

The passivation layer 224 is patterned to form a drain contact hole 226 exposing a part of the drain electrode 218.

9F and 10F, a transparent conductive metal group including indium tin oxide (ITO) and indium zinc oxide (IZO) on the entire surface of the substrate 200 on which the passivation layer 224 is formed. The pixel region P includes a plurality of horizontal portions 228a arranged horizontally in the pixel region P and a vertical portion 228b connecting the neighboring horizontal portions 228a into one by depositing and patterning the selected one. Configure in the center of the.

At this time, the distance between the horizontal portions 228a of the pixel electrodes positioned in the transverse electric field area AI among the horizontal portions is preferably designed in the range of 18 μm to 22 μm.

In addition, the common electrode 202b and the pixel electrode 228a disposed in the transverse electric field area AI are formed to be alternately formed in a plane spaced apart from each other in parallel.

In the above-described configuration, in order to overcome the difference in driving voltage in the fringe field region AI, a spaced apart region (hereinafter, referred to as a block) between the pixel electrode 228a and the common electrode 202a designed in the transverse electric field AF. ) Is configured to form 2 to 4 blocks.

As described above, the array substrate for the transverse electric field type liquid crystal display device according to the second embodiment of the present invention can be manufactured through the above-described process.

The array substrate for a transverse electric field type liquid crystal display device according to the present invention as described above has the following effects.

First, the fringe field region including the rod-shaped pixel electrode and the plate-shaped common electrode and the transverse electric field region including the rod-shaped common electrode and the pixel electrode are mixed so as to have high luminance due to the luminance improvement effect of the transverse electric field region. There is an effect that can be implemented.

Second, there is an effect that the viewing angle characteristics can be improved by arranging the pixel electrodes horizontally.

Claims (17)

A substrate; Gate wiring and data wiring crossing the substrate to define pixel regions; A thin film transistor positioned at an intersection point of the gate line and the data line; A transparent common electrode positioned in the pixel region, configured in a plate shape corresponding to a part of the pixel region, and configured in a plurality of rod shapes corresponding to the remaining region; A transparent pixel electrode positioned on the common electrode and having a plurality of horizontal parts and a vertical part connecting the horizontal parts to one at the center of the pixel area; Array substrate for a transverse electric field type liquid crystal display device comprising a. The method of claim 1, And a common wiring configured simultaneously with the gate wiring and in contact with one side of the common electrode. The method of claim 1, And a horizontal portion of the pixel electrode spaced apart in parallel between the rod-shaped common electrodes. The method of claim 3, wherein The separation distance between the rod-shaped common electrodes and the pixel electrode (horizontal portion) spaced apart in parallel with the rod-shaped common electrode are 18 μm to 22 μm. . The method of claim 3, wherein And two to four spaced apart areas between the rod-shaped common electrode and the pixel electrodes (horizontal portions) spaced apart from each other in the pixel area. The method of claim 1, A fringe field is generated between the plate-shaped common electrode and the horizontal portion of the pixel electrode, and a transverse electric field is generated between the rod-shaped common electrode and the horizontal portion of the pixel electrode. Array substrate for liquid crystal display device. Defining a pixel region on the substrate; Gate wiring and data wiring intersecting the one side and the other side of the pixel region; Forming a thin film transistor at an intersection point of the gate line and the data line; Forming a transparent common electrode positioned in the pixel area, formed in a plate shape corresponding to a part of the pixel area, and formed in a plurality of rod shapes corresponding to the remaining area; Forming a transparent pixel electrode positioned on the common electrode and formed of a plurality of bar shapes positioned in a horizontal direction; Array substrate manufacturing method for a transverse electric field type liquid crystal display device comprising a. The method of claim 7, wherein And a common wiring made of the same material as the gate wiring and in contact with one side of the common electrode. The method of claim 8, Materials forming the common wiring with the gate wiring include aluminum (Al), aluminum alloy (AlNd), tungsten (W), copper (Cu), molybdenum (Mo), chromium (Cr), molybdenum (MoW), and the like. A method for manufacturing an array substrate for a transverse electric field type liquid crystal display device, characterized in that at least one selected from the group consisting of conductive metals. The method of claim 7, wherein And a horizontal portion of the pixel electrode spaced apart in parallel between the rod-shaped common electrodes. The method of claim 10, The separation distance between the rod-shaped common electrodes and the pixel electrode (horizontal portion) spaced apart in parallel with the rod-shaped common electrode are 18 μm to 22 μm. Manufacturing method. The method of claim 10, And 2 to 4 spaced apart areas between the rod-shaped common electrode and the pixel electrode (horizontal portion) spaced apart from the bar-shaped common electrode. The method of claim 7, wherein And the common electrode and the pixel electrode are formed of one selected from a group of transparent conductive metals including indium tin oxide (ITO) and indium zinc oxide (IZO).  Defining a pixel region on the substrate; Forming a transparent common electrode positioned in the pixel area, formed in a plate shape corresponding to a part of the pixel area, and formed in a plurality of rod shapes corresponding to the remaining area; Forming a gate wiring positioned on one side of the pixel region, a gate electrode extending from the gate wiring, and a common wiring in contact with the common electrode; Forming an active layer and an ohmic contact layer on the gate electrode with a gate insulating layer interposed therebetween; Forming a source electrode and a drain electrode spaced apart from and in contact with the ohmic contact layer, and a data line connected to the source electrode and positioned in a direction crossing the gate line; Forming a protective film exposing the drain electrode on an entire surface of the substrate; Forming a pixel electrode in contact with the drain electrode, the pixel electrode including a plurality of horizontal parts positioned in the pixel region, and a first vertical part and a second vertical part connecting one side and the other side of the horizontal part, respectively; Array substrate manufacturing method for a transverse electric field type liquid crystal display device comprising a. The method of claim 14, And a horizontal portion of the pixel electrode spaced apart in parallel between the rod-shaped common electrodes. The method of claim 15, The separation distance between the rod-shaped common electrodes and the pixel electrode (horizontal portion) spaced apart in parallel with the rod-shaped common electrode are 18 μm to 22 μm. Manufacturing method. The method of claim 15, And two to four spaced apart areas between the rod-shaped common electrode and the pixel electrodes (horizontal portions) spaced apart from each other in the pixel area.

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