KR20070056305A - 칠러 장치의 전자식 팽창밸브 제어방법 - Google Patents
칠러 장치의 전자식 팽창밸브 제어방법 Download PDFInfo
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- KR20070056305A KR20070056305A KR1020050114786A KR20050114786A KR20070056305A KR 20070056305 A KR20070056305 A KR 20070056305A KR 1020050114786 A KR1020050114786 A KR 1020050114786A KR 20050114786 A KR20050114786 A KR 20050114786A KR 20070056305 A KR20070056305 A KR 20070056305A
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- Prior art keywords
- expansion valve
- electronic expansion
- steps
- brine
- opening amount
- Prior art date
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- 238000000034 method Methods 0.000 title claims abstract description 35
- 239000004065 semiconductor Substances 0.000 claims description 13
- 239000012267 brine Substances 0.000 abstract description 46
- HPALAKNZSZLMCH-UHFFFAOYSA-M sodium;chloride;hydrate Chemical compound O.[Na+].[Cl-] HPALAKNZSZLMCH-UHFFFAOYSA-M 0.000 abstract description 46
- 230000008569 process Effects 0.000 abstract description 12
- 239000003507 refrigerant Substances 0.000 description 17
- 230000008859 change Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 6
- 238000005057 refrigeration Methods 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 230000006641 stabilisation Effects 0.000 description 4
- 238000011105 stabilization Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
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- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823814—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
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- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/823835—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes silicided or salicided gate conductors
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- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823864—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate sidewall spacers, e.g. double spacers, particular spacer material or shape
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
- H01L29/7843—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being an applied insulating layer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B30/00—Energy efficient heating, ventilation or air conditioning [HVAC]
- Y02B30/70—Efficient control or regulation technologies, e.g. for control of refrigerant flow, motor or heating
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- Engineering & Computer Science (AREA)
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- Air Conditioning Control Device (AREA)
Abstract
Description
Claims (5)
- 반도체 공정설비용 칠러 장치에 적용되는 전자식 팽창밸브를 제어하는 방법으로서,상기 전자식 팽창밸브의 전체 스텝 수에 기초하여 최소 개도량에 대응하는 하한 스텝 수와 최대 개도량에 대응하는 상한 스텝수를 설정하는 단계;상기 설정된 상한 스텝 수와 하한 스텝수를 기준으로 균등 분할하는 단계; 및상기 전자식 팽창밸브에 인가되는 신호 출력 백분율에 상기 균등 분할된 단위 스텝을 대응시키는 단계를 포함하는 것을 특징으로 하는 칠러 장치의 전자식 팽창밸브의 제어방법.
- 청구항 1에 있어서,상기 균등 분할은 100 등분인 것을 특징으로 하는 칠러 장치의 전자식 팽창밸브의 제어방법.
- 청구항 1에 있어서,상기 최소 개도량은 상기 전자식 팽창밸브의 출하시 세팅된 비동작 범위 이상으로 설정되는 것을 특징으로 하는 칠러 장치의 전자식 팽창밸브의 제어방법.
- 청구항 1에 있어서,상기 각 단계는 상기 칠러 장치에 설치되는 컨트롤러에 실장되는 마이크로프로세서에 프로그램 형태로 구현되는 것을 특징으로 하는 칠러 장치의 전자식 팽창밸브의 제어방법.
- 청구항 1에 있어서,상기 전자식 팽창밸브는 디지털화된 전기적 신호를 입력받아 스텝퍼 구동방식으로 0 내지 N 단계로 개도가 변화되는 밸브인 것을 특징으로 하는 칠러 장치의 전자식 팽창밸브의 제어방법.
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Application Number | Priority Date | Filing Date | Title |
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KR1020050114786A KR100751726B1 (ko) | 2005-11-29 | 2005-11-29 | 칠러 장치의 전자식 팽창밸브 제어방법 |
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KR1020050114786A KR100751726B1 (ko) | 2005-11-29 | 2005-11-29 | 칠러 장치의 전자식 팽창밸브 제어방법 |
Publications (2)
Publication Number | Publication Date |
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KR20070056305A true KR20070056305A (ko) | 2007-06-04 |
KR100751726B1 KR100751726B1 (ko) | 2007-08-24 |
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KR1020050114786A KR100751726B1 (ko) | 2005-11-29 | 2005-11-29 | 칠러 장치의 전자식 팽창밸브 제어방법 |
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Families Citing this family (1)
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JP6093267B2 (ja) | 2013-08-09 | 2017-03-08 | 株式会社Kelk | 循環冷却加熱装置 |
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Publication number | Priority date | Publication date | Assignee | Title |
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KR20010048759A (ko) * | 1999-11-29 | 2001-06-15 | 윤종용 | 멀티형 공조기기의 전동팽창밸브의 개도조절방법 |
KR100457569B1 (ko) * | 2002-11-22 | 2004-11-18 | 엘지전자 주식회사 | 히트펌프 시스템의 전자 팽창밸브 제어방법 |
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