KR20070055057A - Chemical mechanical polishing composition for metal circuit - Google Patents
Chemical mechanical polishing composition for metal circuit Download PDFInfo
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- KR20070055057A KR20070055057A KR1020050113330A KR20050113330A KR20070055057A KR 20070055057 A KR20070055057 A KR 20070055057A KR 1020050113330 A KR1020050113330 A KR 1020050113330A KR 20050113330 A KR20050113330 A KR 20050113330A KR 20070055057 A KR20070055057 A KR 20070055057A
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F5/00—Compounds of magnesium
- C01F5/02—Magnesia
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F7/00—Compounds of aluminium
- C01F7/02—Aluminium oxide; Aluminium hydroxide; Aluminates
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G23/00—Compounds of titanium
- C01G23/04—Oxides; Hydroxides
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G25/00—Compounds of zirconium
- C01G25/02—Oxides
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Abstract
본 발명은 금속막의 평판화를 위한 화학 기계적 연마(chemical mechanical polishing: CMP) 조성물에 관한 것으로, 아마이드 결합(-NHCO-) 및 카복실 말단(-COOH)을 갖는 중합체를 착화제로 함유하는 것을 특징으로 하는 본 발명에 따른 연마 조성물은 금속 배선 웨이퍼 표면의 단차를 줄이면서 연마시키므로, 반도체 제조시 금속층의 평판화를 위한 화학 기계적 연마 공정에 유용하게 활용될 수 있다. The present invention relates to a chemical mechanical polishing (CMP) composition for flattening a metal film, comprising a polymer having an amide bond (-NHCO-) and a carboxyl terminus (-COOH) as a complexing agent. Since the polishing composition according to the present invention is polished while reducing the step of the surface of the metal wiring wafer, it can be usefully used in the chemical mechanical polishing process for flattening the metal layer during semiconductor manufacturing.
Description
도 1은 본 발명의 연마 조성물을 반도체의 금속 배선 연마에 이용할 때 산성(a) 및 염기(b) 조건에서 일어나는 에칭 작용을 도시하는 개략도이다. 1 is a schematic diagram showing the etching action takes place in an acid (a) and a base (b) conditions, when using the polishing composition of the present invention in polishing metal wiring of a semiconductor.
본 발명은 금속막의 화학 기계적 연마(chemical mechanical polishing: CMP) 공정에 사용될 수 있는 연마 조성물에 관한 것이다.The present invention relates to a polishing composition that can be used in a chemical mechanical polishing (CMP) process of a metal film.
일반적으로 반도체 제조 공정에는 텅스텐, 알루미늄 및 구리 등의 금속 배선층과 산화 규소(SiO2) 및 질화 규소(Si3N4) 등의 절연막의 평판화를 구현하기 위해 연마 슬러리를 사용하여 웨이퍼로 연마하는 화학 기계적 연마(CMP) 공정이 수행된다.In general, in the semiconductor manufacturing process, a polishing slurry is used to polish a metal wiring layer such as tungsten, aluminum and copper, and an insulating layer such as silicon oxide (SiO 2 ) and silicon nitride (Si 3 N 4 ) to polish the wafer. A chemical mechanical polishing (CMP) process is performed.
이러한 연마 공정에 사용되는 연마 슬러리는 연마제, 물, 분산제 및 첨가제 가 포함되며, 이때 첨가제로는 산화제, 착화제, 부식방지제 및 pH 조절제 등이 사용된다. 이 중, 착화제는 에칭제라고도 하며 산화제에 의해 금속 배선막 표면에 형성된 금속 산화물을 제거하는 역할과, 금속 산화물과 착물을 형성하여 더 이상의 산화를 막는 역할을 동시에 수행하며, 따라서 금속 배선막의 연마에 있어서 특히 중요한 성분이다.The polishing slurry used in the polishing process includes an abrasive, water, a dispersant and an additive, and as the additive, an oxidizing agent, a complexing agent, a corrosion inhibitor and a pH adjusting agent are used. Among these, the complexing agent, also called an etchant, simultaneously removes the metal oxide formed on the surface of the metal wiring film by the oxidant and forms a complex with the metal oxide to prevent further oxidation, thus polishing the metal wiring film. It is a particularly important ingredient.
기존 연마 조성물에는 착화제로 글라이신과 같은 아미노산계 화합물이 주로 사용되어 왔는데, 이러한 아미노산계 화합물의 에칭속도가 너무 빨라 금속 배선막 표면의 단차를 줄이는데 어려움이 있어왔으며 이로 인해 연마 후 디싱(dishing) 등을 발생시키는 문제점이 있었다.Existing polishing compositions have mainly used amino acid compounds such as glycine as complexing agents. Since the etching rate of these amino acid compounds is too fast, it has been difficult to reduce the level difference on the surface of the metal wiring film. There was a problem that occurred.
이를 해결하기 위해, 미국 특허 제5,954,997호에서는 벤조트리아졸 등의 보호막 형성제를 사용하여 에칭속도를 줄이는 방법을 개시하고 있으며, 미국 특허 제6,679,928호에서는 계면활성제를 이용하여 디싱을 감소시키는 방법을 개시하고 있으나, 이러한 방법들 역시 반도체 공정에서의 금속 배선막 연마의 디싱을 효과적으로 감소시키기에는 한계가 있어 왔다.To solve this problem, US Pat. No. 5,954,997 discloses a method of reducing etching rate using a protective film former such as benzotriazole, and US Pat. No. 6,679,928 discloses a method of reducing dishing using a surfactant. However, these methods also have a limit to effectively reduce the dishing of the metal wiring film polishing in the semiconductor process.
이에, 본 발명의 목적은 금속 배선막의 단차를 줄이면서 연마할 수 있도록 하여 디싱을 효과적으로 감소시키는 새로운 착화제(에칭제) 함유 연마 조성물을 제공하는 것이다.Accordingly, it is an object of the present invention to provide a novel complexing agent (etching agent) containing polishing composition which enables polishing while reducing the step of the metal wiring film, thereby effectively reducing dishing.
상기 목적에 따라, 본 발명에서는 연마제, 착화제 및 산화제를 포함하는 금속 배선용 화학기계적 연마 조성물에 있어서, 착화제로서 아마이드 결합(-NHCO-) 및 카복실 말단(-COOH)을 갖는 중합체를 포함하는 것을 특징으로 하는 연마 조성물을 제공한다.According to the above object, in the present invention, in the chemical mechanical polishing composition for metal wiring comprising an abrasive, a complexing agent and an oxidizing agent, the complexing agent comprises a polymer having an amide bond (-NHCO-) and a carboxyl terminal (-COOH). It provides a polishing composition characterized by.
이하, 본 발명을 상세히 설명한다.Hereinafter, the present invention will be described in detail.
본 발명의 조성물에서 특징적으로 사용하는 착화제인 아마이드 결합(-NHCO-) 및 카복실 말단(-COOH)을 갖는 중합체는 500 내지 10만, 바람직하게는 2,500 내지 25,000 범위의 중량평균 분자량을 갖는 것을 특징으로 하며, 이때 분자량이 500 미만인 경우에는 그 크기가 너무 작아 구리 이온에 대한 에칭 작용이 미미해질 수 있는 문제점이 있으며, 분자량이 10만 초과인 경우에는 중합체끼리의 응집(agglomeration)이 발생되어 착화제로서의 기능이 떨어지거나 용해도가 낮아지고 점도가 높아질 수 있는 문제점이 있다.Polymers having amide bonds (-NHCO-) and carboxyl termini (-COOH), which are characteristically used in the compositions of the present invention, have a weight average molecular weight in the range of 500 to 100,000, preferably 2,500 to 25,000. In this case, when the molecular weight is less than 500, the size thereof is too small and there is a problem that the etching action for the copper ions may be insignificant, and the molecular weight is 100,000 In the case of excess, the agglomeration of the polymers (agglomeration) occurs, there is a problem that the function as a complexing agent is reduced or the solubility is low and the viscosity may be high.
본 발명의 착화제인 아마이드 결합 및 카복실 말단을 갖는 중합체는 아마이드기(-NH2) 및 카복실기(-COOH) 말단을 가지고 있어, 예를 들면 도 1에 나타낸 바와 같이, pH가 낮은 산성 조건에서는 카복실기 말단이 구리 2가 이온과 2:1의 몰비로 복합체를 형성하고, pH가 높은 염기 조건에서는 아마이드기가 구리 2가 이온과 결합을 형성하여 구리 이온이 다시 금속막에 접하지 않도록 함으로써 연마제 성분이 나 pH 조건에 상관없이 사용될 수 있는 장점이 있다.The polymer having an amide bond and a carboxyl end, which is a complexing agent of the present invention, has an amide group (-NH 2 ) and a carboxyl group (-COOH) end, for example, as shown in FIG. Group ends form complexes with copper divalent ions at a molar ratio of 2: 1, and under high pH conditions, an amide group forms a bond with copper divalent ions so that copper ions do not come into contact with the metal film again. However, there is an advantage that can be used regardless of the pH conditions.
또한, 단차가 낮은 지역에서는 상기 아마이드 결합 및 카복실 말단을 갖는 중합체의 아마이드기가 금속막 표면에 주로 생성되는 구리 1가 이온과 결합함으로써 중합체의 쿠션역할까지 더해져 우수한 보호막을 형성함으로 인해 산화제로 인한 부식을 방지하고 에칭을 줄여주는 효과를 제공한다.In addition, in the low step area, the amide group of the polymer having the amide bond and the carboxyl end is combined with copper monovalent ions mainly formed on the surface of the metal film, thereby adding a cushioning effect to the polymer to form an excellent protective film, thereby preventing corrosion due to the oxidizing agent. Prevents and reduces etching.
즉, 본 발명의 연마 조성물은 이같이 특징적인 착화제의 사용으로 인해, 금속 배선막 연마시, 단차가 높은 지역에서는 pH 나 연마제 조건에 상관없이 연마 조성물 중의 산화제에 의해 산화된 금속 이온과 본 발명의 착화제가 킬레이트를 형성하여 용해시키므로 산화막의 에칭이 일어나 연마제에 의한 금속 층의 효과적인 연마가 이루어지는 반면, 단차가 낮은 지역에서는 착화제 중의 -N-기가 금속 이온들과 결합하여 중합체의 쿠션(cushion)막을 형성함으로써 에칭 속도를 늦추므로, 결과적으로 금속 배선막의 단차를 줄이면서 연마가 이루어지도록 하여 금속막의 디싱 문제 등을 감소시킨다.That is, the polishing composition of the present invention, due to the use of such a characteristic complexing agent, when polishing the metal wiring film, the metal ion oxidized by the oxidizing agent in the polishing composition and the ions of the present invention regardless of the pH or abrasive conditions in a high step area Since the complexing agent forms and dissolves chelates, the oxide film is etched to effectively polish the metal layer by the abrasive, whereas in a low step area, the -N- group in the complexing agent combines with the metal ions to form a polymer cushion film. By forming, the etching rate is slowed down, and as a result, polishing is performed while reducing the step of the metal wiring film, thereby reducing dishing problems and the like of the metal film.
본 발명에서 착화제로 사용되는 아마이드 결합 및 카복실 말단을 갖는 중합체의 대표적인 예로는 하기 화학식 1의 폴리글루타믹산(poly(glutaimic acid)), 하기 화학식 2의 폴리글라이실글라이신(poly(glycylglycine)), 하기 화학식 3의 폴리페닐알라닌(poly(phenylalanine)) 및 하기 화학식 4의 폴리메티오닌(poly(methionine)) 등이 있다.Representative examples of the polymer having an amide bond and a carboxyl terminus used as a complexing agent in the present invention are poly (glutaimic acid) of Formula 1, polyglycylglycine of Formula 2, Polyphenylalanine (poly (phenylalanine)) of Formula 3 and polymethionine (poly (methionine)) of Formula 4, and the like.
또한, 상기 착화제는 본 발명의 연마 조성물 중량 대비 0.1 내지 10 중량%, 바람직하게는 0.5 내지 5 중량% 범위로 사용할 수 있다.In addition, the complexing agent may be used in the range of 0.1 to 10% by weight, preferably 0.5 to 5% by weight based on the weight of the polishing composition of the present invention.
본 발명에 따른 연마 조성물은 통상의 방법에 따라 제조할 수 있으며, 바람직하게는 연마제를 밀링하면서 물과 분산제를 처리하는 습식 밀링 공정 후 상기 착화제와 첨가제를 추가로 포함시켜 슬러리로 제조될 수 있으며, 이때 첨가제에는 산화제, 부식방지제 및 pH 조절제 등이 있다. The polishing composition according to the present invention may be prepared according to a conventional method, and may preferably be prepared as a slurry by additionally including the complexing agent and additives after a wet milling process of treating water and a dispersant while milling the abrasive. In this case, the additives include oxidizing agents, corrosion inhibitors and pH adjusting agents.
연마제는 연마 대상과의 기계적인 마찰로 연마를 수행하는 역할을 한다. 이러한 연마제로는 통상적인 평균입경 1 내지 8 ㎛의 금속 산화물로, 예를 들면 알루미나(Al2O3), 마그네시아(MgO2), 지르코니아(ZrO2), 세리아(CeO2), 티타니아(TiO2) 및 산화 텅스텐(WO3) 등을 사용할 수 있으며, 연마 조성물 중량 대비 0.1 내지 30 중량%, 바람직하게는 0.5 내지 5 중량% 범위로 사용할 수 있다.The abrasive serves to perform polishing by mechanical friction with the polishing object. Such abrasives are conventional metal oxides having an average particle diameter of 1 to 8 μm, for example, alumina (Al 2 O 3 ), magnesia (MgO 2 ), zirconia (ZrO 2 ), ceria (CeO 2 ), titania (TiO 2). ) And tungsten oxide (WO 3 ), and the like, and may be used in an amount of 0.1 to 30 wt%, preferably 0.5 to 5 wt%, based on the weight of the polishing composition.
분산제는 연마제 입자가 연마 슬러리 내에서 잘 분산되도록 하는 역할을 한다. 이러한 분산제로는 시트르산(citric acid, CA), 폴리아크릴산(polyacrylic acid, PAA) 및 아크릴아마이드(acrylamide)와 아크릴산(acrylic acid)의 공중합체 등의 통상의 계면활성제를 사용할 수 있으며, 연마제 대비 0.05 내지 20중량%로 사용할 수 있다.Dispersants serve to ensure that the abrasive particles are well dispersed in the polishing slurry. As such a dispersant, conventional surfactants such as citric acid (CA), polyacrylic acid (PAA), and copolymers of acrylamide and acrylic acid may be used, and may be 0.05 to abrasive. It can be used at 20% by weight.
산화제는 연마 대상인 금속 배선막이 그에 상응하는 산화물, 수산화물 또는 이온으로 산화되도록 하여 연마를 돕는 역할을 한다. 본 발명의 연마 조성물에 사용될 수 있는 산화제는 특별히 한정되지는 않으나, 예를 들면 CMP 공정에 통상적으로 사용되는 과산화수소(H2O2)를 사용할 수 있으며, 연마 조성물 중량 대비 0.2 내지 30 중량%, 바람직하게는 1 내지 15 중량% 범위로 사용할 수 있다.The oxidant serves to assist the polishing by causing the metal wiring film to be oxidized to be oxidized to a corresponding oxide, hydroxide or ion. The oxidizing agent that can be used in the polishing composition of the present invention is not particularly limited, but for example, hydrogen peroxide (H 2 O 2 ) commonly used in the CMP process may be used, and is 0.2 to 30% by weight based on the weight of the polishing composition, preferably Preferably 1 to 15% by weight.
부식 방지제는 금속 배선막 표면에 부동화층 또는 용해 억제층을 형성시켜 연마 속도를 조절하여 평탄화 향상에 도움을 주는 역할을 한다. 이러한 부식 방지제로는 벤조트리아졸(BTA) 및/또는 트리아졸 유도체가 사용될 수 있으며, 연마 조성물 총 중량 대비 0.001 내지 1 중량%, 바람직하게는 0.001 내지 0.3 중량% 범위로 사용될 수 있다. 이때, 부식 방지제의 함량은 착화제의 양에 따라 변경될 수 있다.The corrosion inhibitor forms a passivation layer or a dissolution inhibiting layer on the surface of the metal wiring film, and serves to improve the planarization by controlling the polishing rate. As the corrosion inhibitor, benzotriazole (BTA) and / or triazole derivatives may be used, and may be used in the range of 0.001 to 1% by weight, preferably 0.001 to 0.3% by weight based on the total weight of the polishing composition. At this time, the content of the corrosion inhibitor may be changed depending on the amount of the complexing agent.
pH 조절제는 연마 조성물의 pH를 조절하는 역할을 한다. pH 조절제로는 통상적인 산, 염기 또는 아민 화합물은 모두 사용할 수 있고, 예를 들면 수산화 암모늄 및 아민, 질산, 황산, 인산, 및 유기산 등을 사용할 수 있으며, 본원 발명의 경우 연마제를 보호하기 위해 연마 조성물의 pH가 2 내지 11, 바람직하게는 4 내지 9가 되도록 첨가될 수 있다.The pH adjuster serves to adjust the pH of the polishing composition. As the pH adjusting agent, any conventional acid, base or amine compound may be used, and for example, ammonium hydroxide and amine, nitric acid, sulfuric acid, phosphoric acid, organic acid, and the like may be used, and in the present invention, in order to protect the abrasive, The pH of the composition can be added to be from 2 to 11, preferably from 4 to 9.
이렇게 얻어진 본 발명의 연마 조성물은 금속 배선막의 단차를 줄이면서 연마를 수행하므로, 반도체 제조 시 금속 배선의 평판화를 위한 화학 기계적 연마 공정에 유용하게 활용될 수 있다. Since the polishing composition of the present invention thus obtained performs polishing while reducing the step of the metal wiring film, it may be usefully used in a chemical mechanical polishing process for flattening the metal wiring in semiconductor manufacturing.
상기에서 살펴본 바와 같이, 본 발명에 따른 아마이드 결합 및 카복실 말단을 갖는 중합체를 착화제로 함유하는 연마 조성물은 금속 배선막의 단차가 높은 지역은 pH 또는 연마제(abrasive) 성분 조건에 상관없이 에칭을 가속화하고 단차가 낮은 지역은 에칭속도를 조절시켜 단차를 줄이면서 연마가 수행되도록 하여 결과적으로 디싱 등을 효과적으로 감소시키면서 우수한 연마 효율을 나타내므로, 반도체 제조 시 평판화를 위한 화학 기계적 연마 공정에 유용하게 활용될 수 있다.As described above, the polishing composition containing a polymer having an amide bond and a carboxyl end as a complexing agent according to the present invention is a region where the step height of the metal wiring film is high, which accelerates the etching and the step regardless of the pH or the abrasive component condition. The low area allows the polishing to be performed while controlling the etching rate to reduce the step, resulting in excellent polishing efficiency while effectively reducing dishing and the like, and thus can be useful for the chemical mechanical polishing process for flattening in semiconductor manufacturing. have.
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