KR20070014737A - Organic light emitting diode and method for fabricating the same - Google Patents

Abstract

An organic light emitting diode and a fabricating method thereof are provided to simplify a process by simultaneously forming a gate insulating layer and an organic layer through laser induced thermal imaging. A substrate with source/drain electrodes(121,125), a lower electrode(160), and a semiconductor layer(130) is prepared. A donor film(10) having an insulating substance and an organic substance as a transfer layer(13) corresponding to the substrate is prepared. The transfer layer of the donor film is transferred onto the substrate to form a first insulating layer and an organic layer(13-1) on the substrate. The first insulating layer has an opening for exposing a portion of the lower electrode. A gate is formed on the substrate, and an upper electrode is formed on the substrate.

Description

Organic light emitting display device and method for manufacturing the same {Organic light emitting diode and method for fabricating the same}

1 is a cross-sectional view of an organic light emitting display device according to an embodiment of the present invention;

2A to 2C are cross-sectional views illustrating a method of manufacturing an organic light emitting display device according to an embodiment of the present invention;

3 is a cross-sectional view of an organic light emitting display device according to another embodiment of the present invention;

4A to 4C are cross-sectional views illustrating a method of manufacturing an organic light emitting display device according to another embodiment of the present invention;

5 is a cross-sectional view illustrating a method of manufacturing an organic light emitting display device according to another embodiment of the present invention;

6A to 6C illustrate an example of an opening pattern of a gate insulating film in an organic light emitting display device according to an exemplary embodiment of the present invention;

Explanation of symbols on the main parts of the drawings

100, 200: organic light emitting display device 110, 210: substrate

130 and 230: semiconductor layers 140 and 240: gate insulating film

121, 125, 221, 225: source / drain electrodes

145, 245: opening 150, 250: gate

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a flat panel display, and more particularly, to an organic light emitting display device and a method of manufacturing the same, which simultaneously form a gate insulating film and an organic film layer having an opening defining a pixel by a laser transfer method.

Organic thin film transistors are being actively researched as driving elements of next generation display devices. Organic thin film transistors (OTFTs) use organic films instead of silicon films as semiconductor layers. Depending on the materials of the organic films, low molecular weight organic materials such as oligothiophene, pentacene, and polythiophene may be used. It is classified into high molecular organic substance such as (polythiophene) series.

In general, a flexible organic light emitting display device uses a flexible substrate as a substrate, and the flexible substrate includes a plastic substrate. Since plastic substrates have very poor thermal stability, it is required to manufacture organic light emitting display devices using low temperature processes. Accordingly, an organic thin film transistor using an organic film as a semiconductor layer is capable of a low temperature process, and thus has been in the spotlight as a switching element of a flexible organic light emitting display device.

In a conventional organic light emitting display device having an organic thin film transistor, a thin film transistor including a source / drain electrode, a semiconductor layer, and a gate is formed on a substrate, a protective film is formed on the thin film transistor, and a lower electrode is formed on the protective film. , An organic light emitting device including an organic layer and an upper electrode is formed.

A gate insulating film is formed between the source / drain electrodes and the gate of the thin film transistor. The lower electrode is connected to one of the source / drain electrodes of the thin film transistor through a via hole formed in the passivation layer. The pixel isolation layer has an opening that exposes a portion of the lower electrode, and an organic layer is formed on the bud electrode of the opening, and an upper electrode is formed thereon.

The conventional organic light emitting display device as described above has a back light emitting structure, a top light emitting structure, and a double light emitting structure according to a path from which light from an organic layer is emitted. In the bottom emission type organic light emitting display device, light emitted from the organic light emitting layer is emitted toward the substrate. In the top emission type organic light emitting display device, the light emitted from the organic light emitting layer is emitted to the opposite side of the substrate. In the display device, light is simultaneously emitted from the organic light emitting layer in a direction opposite to the substrate.

The organic light emitting display device as described above includes a process of forming a thin film transistor including a source / drain electrode, a semiconductor layer, and a gate, a process of forming a via hole through a mask process after forming a passivation layer, and a via hole on the passivation layer. Forming a lower electrode connected to the thin film transistor through the deposition process, depositing a pixel separation layer on the lower electrode, and then forming an opening for exposing the pixel electrode through a mask process; forming an organic layer and an upper electrode Since the process is included, the process has a very complicated problem.

In addition, when the opening is formed in the pixel separation layer, the residue of the photoresist remains when the photoetching process is formed, thereby causing a pattern defect.

The present invention is to solve the problems of the prior art as described above, to provide a flat panel display device and a method of manufacturing the same by simplifying the process by simultaneously forming a gate insulating film and an organic film layer used as a pixel separation film by a laser transfer method The purpose is.

In order to achieve the above object, the present invention comprises the steps of providing a substrate having a source / drain electrode and a lower electrode and a semiconductor layer; Providing a donor film having an insulating material and an organic material as a transfer layer corresponding to the substrate; Transferring the transfer layer of the donor film to the substrate to simultaneously form a first insulating film and an organic film layer having an opening on the substrate to expose a portion of the lower electrode; Forming a gate on the substrate; It provides a method for manufacturing an organic light emitting display device comprising forming an upper electrode on a substrate.

The insulating material in the transfer layer of the donor film is patterned to have an opening corresponding to the opening of the first insulating film.

The first insulating layer serves as a gate insulating layer and at the same time serves as a pixel isolation layer defining the lower electrode. Preferably, the first insulating layer is formed of SiO 2, polyimide, or polyvinyl phenol (PVP). At least one membrane selected from the group consisting of polyvinyl alcohol (PVA), polyvinyl chloride (PVC), poly methylmethacrylate (PMMA), parylene, and PI / Al2O3.

The organic material includes a common layer including at least one layer selected from a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, and a hole suppression layer, and a light emitting layer.

The method of manufacturing an organic light emitting display device according to the present invention further includes forming a second insulating layer for insulating the gate from the upper electrode after forming the gate. The second insulating layer may include an organic insulating layer, an inorganic insulating layer, or an organic-inorganic hybrid layer.

The semiconductor layer includes an organic semiconductor material, the source / drain electrodes are formed of different materials, and the lower electrode extends from one of the source / drain electrodes.

The semiconductor layer includes an organic semiconductor material, and the source / drain electrode and the lower electrode include different materials, and the lower electrode is connected to one of the source / drain electrodes.

In addition, the present invention is a substrate; A source electrode and a drain electrode formed on the substrate; A semiconductor layer in contact with the source / drain electrode; A gate formed on the substrate; A first insulating layer formed between the source / drain electrode and the gate and having an opening; An organic film layer formed on the first insulating film; A lower electrode partially exposed by the opening of the first insulating layer; An organic light emitting display device includes an upper electrode formed on a substrate, and the first insulating layer and the organic layer are formed simultaneously by a laser transfer method.

Hereinafter, an embodiment of the present invention will be described with reference to the accompanying drawings.

1 is a cross-sectional view of an organic light emitting display device according to an embodiment of the present invention. The organic light emitting diode display 100 according to an exemplary embodiment includes a plurality of pixels arranged in a matrix form on a substrate, and each pixel includes two thin film transistors, a switching thin film transistor and a driving thin film transistor, and a capacitor and an organic light emitting diode. A light emitting element is provided. 1 shows an organic light emitting diode and a driving thin film transistor for driving the organic light emitting diode.

Referring to FIG. 1, source / drain electrodes 121 and 125 are formed on a substrate 110, and a lower electrode 160 includes one electrode of the source / drain electrodes 121 and 125. For example, it extends from the drain electrode 125. The lower electrode 160 serves as a pixel electrode of each pixel. The semiconductor layer 130 is formed to contact the source / drain electrodes 121 and 125.

The gate insulating layer 140 is formed on the substrate. The gate insulating layer 140 has an opening 145 in a portion corresponding to the lower electrode 160 to serve as a pixel isolation layer to define the lower electrode 160. The organic layer 170 is formed on the lower electrode 160 and the gate insulating layer 145 of the opening 145.

The gate 150 is formed on the organic layer 170, and the upper electrode 180 is formed on the substrate. An insulating layer 155 is interposed between the gate 150 and the upper electrode 180 to insulate them from each other. Although not shown in the drawing, a buffer layer may be further provided between the substrate 110, the source electrode 121, and the drain electrode 125.

The organic layer 170 includes at least one common layer and an organic light emitting layer selected from a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer and a hole suppression layer. Although not shown in the drawing, the common layer may be formed to be connected to or separated from each other between adjacent pixels, and the emission layer may be formed on an opening on the pixel electrode to be separated from each other between adjacent pixels.

The substrate 110 may include a glass substrate, a plastic substrate, or a metal substrate. The metal substrate preferably includes SUS (steel use stainless). The plastic substrate is polyethersulphone (PES), polyacrylate (PAR, polyacrylate), polyetherimide (PEI, polyetherimide), polyethylene naphthalate (PEN, polyethyelenen napthalate), polyethylene terephthalate (PET, polyethyeleneterepthalate) , Polyphenylene sulfide (PPS), polyallylate, polyimide, polycarbonate (PC), cellulose tri acetate (TAC), cellulose acetate propinonate (CAP) It includes a plastic film selected from the group consisting of.

The semiconductor layer 130 may include an organic semiconductor layer, and may include pentacene, tetracene, anthracene, naphthalene, alpha-6-thiophene, perylene, and the like. Derivatives, rubrene and derivatives thereof, coronene and derivatives thereof, perylene tetracarboxylic diimide and derivatives thereof, perylene tetracarboxylic dianhydride ) And derivatives thereof, polythiophene and derivatives thereof, polyparaperylenevinylene and derivatives thereof, polyfluorene and derivatives thereof, polythiophenevinylene and derivatives thereof, polyparaphenylene and derivatives thereof, polythiophene- Heterocyclic aromatic copolymers and derivatives thereof, oligoacenes and derivatives thereof of naphthalene, oligothiophenes and derivatives thereof of alpha-5-thiophene, phthalocyanines with or without metals and their Conductor, pyromellitic dianhydride and derivatives thereof, pyromellitic diimide and derivatives thereof, perylenetetracarboxylic dianhydride and derivatives thereof, naphthalene tetracarboxylic acid diimide and derivatives thereof, naphthalene tetracarboxylic acid Organic membranes selected from dianhydrides and derivatives thereof.

Meanwhile, the semiconductor layer 130 may include a silicon film such as an amorphous silicon film or a polycrystalline silicon film, and may include a source / drain region doped with a high concentration of impurities in a portion contacting the source / drain electrodes 121 and 125. It may also include.

The gate insulating layer 140 is a material capable of laser transfer, and includes an organic insulating layer, an inorganic insulating layer, or an organic-inorganic hybrid layer, and includes a single layer or a multilayer. The gate insulating layer 140 may be formed of SiO 2, polyimide, polyvinyl phenol (PVP), polyvinyl alcohol (PVA), polyvinyl chloride (PVC), poly methylmethacrylate (PMMA), parylene, and PI. And a film selected from the group comprising / Al 2 O 3.

In the organic light emitting diode display 100 according to an exemplary embodiment, the source electrode 121 and the drain electrode 125 are made of different materials. Since the source electrode 121 has an important contact resistance with the semiconductor layer 130, the source electrode 121 includes an electrode material having a larger work function than the semiconductor layer 130 and includes a metal electrode material selected from Au, Pt, and Pd. .

Meanwhile, since the portion of the drain electrode 125 exposed by the gate insulating layer 140 serves as the lower electrode 160, that is, the anode electrode, the drain electrode 125 preferably includes the lower electrode material.

For example, when the organic light emitting display device 100 has a bottom light emitting structure, the lower electrode 160 preferably includes a transmissive electrode. The lower electrode 160 preferably includes a transparent conductive film such as ITO, IZO, ZnO, or In 2 O 3. On the other hand, when having a top light emitting structure, the lower electrode 160 includes a reflective electrode, preferably, the lower electrode 160 includes a transparent conductive film, and a reflective film having excellent reflectance under the transparent conductive film. The transparent conductive film for the lower electrode 160 includes ITO, IZO, ZnO, or In 2 O 3, and the like, and the reflective film is Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, or a compound thereof. And the like.

The upper electrode 180 includes a reflective electrode when the back light emitting structure is formed, and includes Li, Ca, LiF / Ca, LiF / Al, Al, Mg, or a compound thereof. On the other hand, in the case of having a top light emitting structure, the upper electrode 180 includes a transmissive electrode, and has a stacked structure of a metal film and a transparent conductive film. The metal film for the upper electrode 180 may include Li, Ca, LiF / Ca, LiF / Al, Al, Mg, or a compound thereof, and the transparent conductive film may include ITO, IZO, ZnO, In2O3, or the like.

The insulating film 155 may include an inorganic insulating film such as an oxide film or a nitride film, an organic insulating film such as polyimide, parylene, PVP, or the like, or an organic-inorganic hybrid film.

6A to 6C illustrate examples of patterns of the openings 145 of the gate insulating layer 140 in the organic light emitting diode display according to the exemplary embodiment. In the organic light emitting display device 100 of the present invention, a plurality of gate lines 101 and a plurality of data lines 103 are arranged on the substrate 110, and the plurality of gate lines 101 and a plurality of data lines ( A plurality of pixel regions 105 defined by 103 are provided.

In each pixel region 105, an organic light emitting diode including a pixel electrode as the lower electrode 160 as illustrated in FIG. 1, and a thin film transistor for driving the organic light emitting diode are arranged. In addition, a power line (not shown in the drawing) for supplying a power voltage is arranged, which may be arranged to cross the gate line 105 and be parallel to the data line.

6A through 6C schematically illustrate the pixel electrode 160 arranged in the gate line 101, the data line 103, and the pixel region 105. In the exemplary embodiment of the present invention, only one thin film transistor for driving the pixel electrode 160 in each pixel region 105 is illustrated.

6A through 6C, the gate insulating layer 140 has openings 145 for exposing portions of the pixel electrodes 160 arranged in the pixel regions 105, respectively, in a mesh form or a plurality of pixel regions. The pixel electrodes 160 arranged in the 105 are arranged in line so as to expose a portion of the pixel electrodes arranged in one direction, that is, a part of the pixel electrodes arranged along the data line or the gate line.

2A to 2C are cross-sectional views illustrating a method of manufacturing an organic light emitting display device using a laser transfer method according to an embodiment of the present invention.

Referring to FIG. 2A, the source electrode 121 and the drain electrode 125 are formed on the substrate 110, and the semiconductor layer 130 is formed to be in contact with the source electrode 121 and the drain electrode 125. . The substrate 110 uses a plastic substrate, a glass substrate, or a metal substrate. The semiconductor layer 130 includes an organic semiconductor layer. In addition, the semiconductor layer 130 may include a silicon film.

Although not shown in the drawing, the source electrode 121 may be formed and then the drain electrode 125 may be formed, or the drain electrode 125 may be formed and then the source electrode 121 may be formed. Preferably, since a part of the drain electrode is exposed in a subsequent process to serve as the pixel electrode, it is preferable to form the source electrode after forming the source electrode in order to prevent surface damage or surface contamination of the pixel electrode.

The source electrode 121 includes a material for reducing contact resistance with the semiconductor layer 130, for example, Au, Pd, or Pt. Since the drain electrode 125 is used as a lower electrode of the organic light emitting diode, the drain electrode 125 includes a transmissive electrode material or a reflective electrode material. For example, the drain electrode 125 includes ITO, IZO, ZnO, In2O3, or the like as a transmissive electrode, or Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, or the like as a reflective electrode. Lamination films of reflective electrode materials such as these compounds and transparent conductive films such as ITO, IZO, ZnO, or In 2 O 3.

Next, the donor film 10 for forming a gate insulating film and an organic film layer is prepared. The donor film 10 includes a base film 11, a light-to-heat conversion layer 12, and a transfer layer 13. The base film 11 serves as a support film and includes a transparent polymer. For example, the base film 11 may include polyester such as polyethylene terephthalate, polyacryl, polyepoxy, polyethylene, polystyrene, and the like.

The light-heat conversion layer 12 includes a light absorbing material that absorbs light in the infrared-visible light region. The transfer layer 13 is formed of an insulating material 13-2 for the gate insulating film to be formed on the substrate 110 and an organic material 13-1 for the organic film layer through the deposition or coating process. It is formed on (12). The gate insulating material 13-2 of the transfer layer 13 may include an organic insulating material, an inorganic insulating film, or an organic-inorganic hybrid film. The organic film layer 13-1 includes an organic common layer and an organic light emitting layer.

The donor film 10 is not limited to the structure shown in FIG. 2A, but is coated with an anti-reflection coating or film to prevent the transfer layer 13 from deteriorating due to reflection. In order to improve the sensitivity of the light-heat conversion layer 12, the gas generation layer may be further provided, such as having a variety of structures.

Referring to FIG. 2B, the donor film 10 is adhered to the substrate 110 and then the light amount of the laser beam irradiated to the portion where the opening 145 is to be formed and the other portions is different from the donor film 10. When the laser is irradiated, the transfer layer 13 is transferred onto the substrate. As a result, the gate insulating layer 140 and the organic layer 170 having the opening 145 exposing a portion of the drain electrode 125 are formed at the same time. That is, the transfer layer 13-2 for the gate insulating layer 140 is etched by irradiating a relatively large laser light to a portion of the donor film 10 corresponding to the opening 145 of the gate insulating layer 140. On the other hand, the donor film 10 except for the portion corresponding to the opening 145 is irradiated with as much laser light as possible for laser transfer so as to simultaneously form the gate insulating layer 140 and the organic layer 170. do.

The gate insulating layer 140 has an opening 145 having a shape as shown in FIGS. 6A to 6C. A portion of the drain electrode 125 exposed to the opening 145 of the gate insulating layer 140 becomes the lower electrode 160 as an anode electrode. Accordingly, the gate insulating layer 140 also functions as a pixel defining layer defining the lower electrode 160 by the opening 145.

Referring to FIG. 2C, a gate 150 is formed in a portion of the organic layer 170 that corresponds to the semiconductor layer 130, and an insulating layer 155 is formed to cover the gate 150. When the upper electrode 180 is formed, the organic light emitting display device 100 according to the exemplary embodiment as shown in FIG. 1 is manufactured. The upper electrode 180 includes a transmissive electrode or a reflective electrode. The insulating film 155 may include an inorganic insulating film such as an oxide film or a nitride film, an organic insulating film such as polyimide, parylene, PVP, or the like, or an organic-inorganic hybrid film.

3 is a cross-sectional view of an organic light emitting display device according to another embodiment of the present invention. According to another exemplary embodiment, an organic light emitting display device 200 includes a plurality of pixels arranged in a matrix form on a substrate, and each pixel includes two thin film transistors, a switching thin film transistor, a driving thin film transistor, and a capacitor. An organic light emitting element is provided. FIG. 3 shows only an organic light emitting diode and a driving thin film transistor for driving the organic light emitting diode.

Referring to FIG. 3, the source / drain electrodes 221 and 225 are formed on the substrate 210, and the lower electrode 260 is one of the source / drain electrodes 221 and 225. For example, it is formed on the substrate to be connected to the drain electrode 225. The lower electrode 360 serves as a pixel electrode of each pixel. The semiconductor layer 230 is formed to contact the source / drain electrodes 221 and 225.

The gate insulating layer 240 is formed on the substrate. The gate insulating layer 240 has an opening 245 in a portion corresponding to the lower electrode 260 to serve as a pixel isolation layer to define the lower electrode 260. An organic layer 270 is formed on the lower electrode 260 and the gate insulating layer 245 of the opening 245.

The gate 250 is formed on the organic layer 270, and the upper electrode 280 is formed on the substrate. An insulating layer 255 is interposed between the gate 250 and the upper electrode 280 to insulate them from each other. Although not shown in the drawing, a buffer layer may be further provided between the substrate 210, the source electrode 221, and the drain electrode 225.

Although not shown in the drawing, the organic layer 270 includes a common layer and an organic light emitting layer including one or more organic layers selected from a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, and a hole suppression layer. The organic common layer may be formed to be separated or connected to each other between neighboring pixels, and the organic light emitting layer is preferably formed to be separated from each other between neighboring pixels.

As in the exemplary embodiment, the substrate 210 includes a glass substrate, a plastic substrate, or a metal substrate, and the semiconductor layer 230 includes an organic semiconductor film or a silicon film.

The gate insulating layer 240 includes an opening 245 for exposing the lower electrode 260. The opening 245 has a structure arranged in a mesh form or a line form as shown in FIGS. 6A to 6C.

The gate insulating layer 240 is a material capable of laser transfer, and includes an organic insulating layer, an inorganic insulating layer, or an organic-inorganic hybrid layer, and includes a single layer or a multilayer. The gate insulating layer 240 may be formed of SiO 2, polyimide, polyvinyl phenol (PVP), polyvinyl alcohol (PVA), polyvinyl chloride (PVC), poly methylmethacrylate (PMMA), parylene, and PI. And a film selected from the group comprising / Al 2 O 3.

Since the source / drain electrodes 221 and 225 have an important contact resistance with the semiconductor layer 230, the source / drain electrodes 221 and 225 have a larger work function than the organic semiconductor layer 230. An electrode material, and a metal electrode material selected from Au, Pt, and Pd.

The lower electrode 260 may include a transmissive electrode when the organic light emitting display device 200 has a bottom light emitting structure. The lower electrode 260 preferably includes a transparent conductive film such as ITO, IZO, ZnO, or In 2 O 3. On the other hand, when having a top light emitting structure, the lower electrode 260 includes a reflective electrode, preferably, the lower electrode 260 is provided with a transparent conductive film, and a reflective film having excellent reflectance under the transparent conductive film. The transparent conductive film for the lower electrode 260 includes ITO, IZO, ZnO, or In 2 O 3, and the like, and the reflective film is Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, or a compound thereof. And the like.

When the upper electrode 280 has a back light emitting structure, it includes a reflective electrode, and includes Li, Ca, LiF / Ca, LiF / Al, Al, Mg, or a compound thereof. On the other hand, in the case of having a top light emitting structure, the upper electrode 280 includes a transmissive electrode, and has a stacked structure of a metal film and a transparent conductive film. The metal film for the upper electrode 280 may include Li, Ca, LiF / Ca, LiF / Al, Al, Mg, or a compound thereof, and the transparent conductive film may include ITO, IZO, ZnO, or In 2 O 3.

The insulating film 255 may include an inorganic insulating film such as an oxide film or a nitride film, an organic insulating film such as polyimide, parylene, PVP, or the like, or an organic-inorganic hybrid film.

4A to 4C are cross-sectional views illustrating a method of manufacturing an organic light emitting display device according to another embodiment of the present invention.

Referring to FIG. 4A, a source electrode 221 and a drain electrode 225 are formed on the substrate 210, and one of the source / drain electrodes 221 and 225, for example, a drain electrode ( The semiconductor layer 230 is formed to be in contact with the lower electrode 260 connected to the 225 and the source electrode 221 and the drain electrode 225. The substrate 210 may be a plastic substrate, a glass substrate, or a metal substrate. The semiconductor layer 230 includes an organic semiconductor layer. In addition, the semiconductor layer 230 may include a silicon film.

The source / drain electrodes 221 and 225 include a material for reducing contact resistance with the semiconductor layer 230, for example, Au, Pd, or Pt. The lower electrode 260 includes a transmissive electrode material or a reflective electrode material. For example, the lower electrode 260 includes ITO, IZO, ZnO, In2O3, or the like as a transmissive electrode, or Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, or the like as a reflective electrode. Lamination films of reflective electrode materials such as these compounds and transparent conductive films such as ITO, IZO, ZnO, or In 2 O 3.

Next, the donor film 20 for forming a gate insulating film is prepared. The donor film 20 has the same structure as the donor film 10 according to the exemplary embodiment, and includes a base film 21, a light-to-heat conversion layer 22, and a transfer layer 23. The transfer layer 23 includes an insulating material 23-2 for the gate insulating film and an organic material 23-1 for the organic layer.

Referring to FIG. 4B, the donor film 20 is adhered to the substrate 210 and then the light amount of the laser beam irradiated to the portion where the opening 245 is to be formed and the other portions is different from the donor film 20. When the laser is irradiated, the transfer layer 23 is transferred onto the substrate. As a result, the gate insulating layer 240 and the organic layer 270 having the openings 245 exposing a portion of the lower electrode 260 are simultaneously formed. The process of forming the pdlxm insulating layer 240 and the organic layer 270 by irradiating different amounts of light is the same as that of the exemplary embodiment.

The openings 245 of the gate insulating layer 240 are arranged in a mesh form or a line form as shown in FIGS. 6A to 6C. Therefore, the gate insulating layer 240 also functions as a pixel defining layer defining the lower electrode 260 by the opening 245.

Referring to FIG. 4C, a gate 250 is formed in a portion of the organic layer 270 corresponding to the semiconductor layer 230, and then an insulating layer 255 is formed to cover the gate 250, and then on the substrate. When the upper electrode 280 is formed, an organic light emitting display device 200 according to another exemplary embodiment as shown in FIG. 3 is manufactured.

FIG. 5 is a cross-sectional view illustrating a method of manufacturing an organic light emitting display device according to another embodiment of the present invention, and has the same structure as the organic light emitting display device 200 according to the embodiment shown in FIG. 2A. Have However, the donor film 10 is not patterned in the embodiment shown in FIG. 2A, but in the other embodiment shown in FIG. 5, the donor film 10 is only patterned in the same structure as the gate insulating film and the organic film layer formed on the substrate. Accordingly, the insulating material 33-2 for the gate insulating film of the transfer layer 33 of the donor film 30 has an opening 33-2a having a shape as shown in FIGS. 6A to 6C, and an organic material. (33-1) has the same form as the organic film layer.

In the exemplary embodiment of the present invention, in the organic light emitting display device having the thin film transistor, a structure in which the gate insulating film is used as the pixel isolation layer defining the pixel electrode is illustrated, but the present invention is not necessarily limited thereto, and the thin film transistor is used as the switching element. Of course, the present invention can be applied to a flat panel display such as a liquid crystal display.

In the exemplary embodiment of the present invention, the organic light emitting display device including the top gate thin film transistor has been described. However, the present invention is not limited thereto, and the organic light emitting display device is not limited thereto.

Further, the present invention exemplifies only the driving thin film transistor and the organic light emitting device as one pixel structure arranged in the pixel region. However, the present invention is not limited thereto, and the present invention can be applied to an organic light emitting display device having various pixel structures.

According to the organic light emitting display device and the method of manufacturing the same according to the embodiment of the present invention as described above, since the gate insulating film serves as a pixel separation film defining the pixel electrode, one electrode of the pixel electrode and the source / drain electrode of the thin film transistor And a mask process for forming a via hole for connecting to the substrate and a process for forming a pixel definition layer defining a light emitting region of the pixel electrode. This can simplify the structure and process of the device.

In addition, in the present invention, since the gate insulating film and the organic film layer having the openings for defining the pixel electrodes are formed at the same time by using the laser transfer method, not only the process can be simplified but also the picture for forming the openings of the conventional pixel separation film. The etching process is excluded to prevent pattern defects caused by the residue of the photosensitive material.

Although the above has been described with reference to a preferred embodiment of the present invention, those skilled in the art will be able to variously modify and change the present invention without departing from the spirit and scope of the invention as set forth in the claims below. It will be appreciated.

Claims (14)

Providing a substrate having a source / drain electrode and a lower electrode and a semiconductor layer; Providing a donor film having an insulating material and an organic material as a transfer layer corresponding to the substrate; Transferring the transfer layer of the donor film to the substrate to simultaneously form a first insulating film and an organic film layer having an opening on the substrate to expose a portion of the lower electrode; Forming a gate on the substrate; A method of manufacturing an organic light emitting display device, comprising: forming an upper electrode on a substrate. The method of claim 1, The insulating material of the transfer layer of the donor film is patterned to have an opening corresponding to the opening of the first insulating film. The method according to claim 1 or 2, And the first insulating layer functions as a gate insulating layer and as a pixel separation layer defining the lower electrode. The method of claim 3, The first insulating layer is SiO 2, polyimide, polyvinyl phenol (PVP), polyvinyl alcohol (PVA), polyvinyl chloride (PVC), poly methylmethacrylate (PMMA), parylene and PI / A method for manufacturing an organic light emitting display device, the method comprising at least one film selected from the group containing Al2O3. The method of claim 1, The organic material may include a common layer including at least one layer selected from a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, and a hole suppression layer, and a light emitting layer. . The method of claim 1, And forming a second insulating film to insulate the gate from the upper electrode after the forming of the gate. The method of claim 6, The second insulating layer may include an organic insulating layer, an inorganic insulating layer, or an organic-inorganic hybrid layer. The method of claim 1, The semiconductor layer includes an organic semiconductor material, The source / drain electrodes are made of different materials, And the lower electrode extends from one electrode of a source / drain electrode. The method of claim 1, The semiconductor layer includes an organic semiconductor material, The source / drain electrode and the lower electrode include different materials, And the lower electrode is connected to one of the source / drain electrodes. A substrate; A source electrode and a drain electrode formed on the substrate; A semiconductor layer in contact with the source / drain electrode; A gate formed on the substrate; A first insulating layer formed between the source / drain electrode and the gate and having an opening; An organic film layer formed on the first insulating film; A lower electrode partially exposed by the opening of the first insulating layer; An upper electrode formed on the substrate, And the first insulating layer and the organic layer are formed at the same time by a laser transfer method. The method of claim 10, The semiconductor layer includes an organic semiconductor material, And the insulating layer acts as a gate insulating layer and as a pixel isolation layer defining the lower electrode. The method according to claim 10 or 11, wherein The first insulating layer is SiO 2, polyimide, polyvinyl phenol (PVP), polyvinyl alcohol (PVA), polyvinyl chloride (PVC), poly methylmethacrylate (PMMA), parylene and PI / An organic light emitting display device comprising at least one film selected from the group consisting of Al 2 O 3. The method of claim 11, And a second insulating layer between the gate and the upper electrode to insulate the gate and the upper electrode. The method of claim 13, And the second insulating layer includes an organic insulating layer, an inorganic insulating layer, or an organic-inorganic hybrid layer.

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