KR20060125315A - Apparatus for manufacturing semiconductor device - Google Patents

Abstract

An apparatus for fabricating a semiconductor device is provided to reduce contamination of process fluids by supplying each process fluid to the back surface of a semiconductor substrate through each rear nozzle. A chuck on which a semiconductor substrate is placed is installed in a process chamber. A rear nozzle part(600) includes a plurality of rear nozzles(630a,630b,630c) for supplying a plurality of fluids to the back surface of the semiconductor substrate. A fluid supply apparatus for a rear nozzle supplies the plurality of fluids to the plurality of rear nozzles. The plurality of rear nozzles are installed at regular intervals wherein each rear nozzle includes a plurality of injection holes(640).

Description

Apparatus for manufacturing semiconductor device

1 is a schematic view showing a semiconductor device manufacturing apparatus according to an embodiment of the present invention.

2 is a partial perspective view of FIG. 1.

3 is a perspective view illustrating an internal structure of the rear nozzle unit of FIG. 1.

4A and 4D are conceptual views illustrating the operation of the rear nozzle unit of FIG. 1.

<Explanation of symbols on main parts of the drawings>

1: Semiconductor device manufacturing apparatus 100: Process chamber

200: semiconductor substrate protection unit 300: chuck

400: semiconductor substrate rotating part 500: fluid supply device for the rear nozzle

600: rear nozzle

620a, 620b, 620c, and 620d: first to fourth fluid supply lines

630a, 630b, 630c, 630d: first to fourth rear nozzles

640: injection hole 700: fluid supply device for the upper nozzle

800: outlet

The present invention relates to a semiconductor device manufacturing apparatus, and more particularly to a semiconductor device manufacturing apparatus with improved equipment productivity.

In general, a semiconductor substrate is fabricated as one completed semiconductor device as various processes such as a photo process, a diffusion process, an etching process, and a chemical vapor deposition process are repeatedly performed.

In manufacturing a semiconductor device in recent years, one of the most important is to maintain a clean state so that the semiconductor substrate is not contaminated during each process. This is because, with the development of semiconductor integrated technology, particles of about 0.1 μm have a great influence on the yield and quality of semiconductor substrates as the design rule is refined.

Therefore, the bottom particle removal of the semiconductor substrate also plays a very important role in increasing the manufacturing yield of the semiconductor.

Until now, particle removal from the bottom of a semiconductor substrate has been carried out through a single fluid supply tube with a particle removal chemical fluid, a cleaning fluid such as deionized water, and a drying fluid such as nitrogen gas. Proceed as supplied. The supplied fluids are radially stretched along the bottom of the semiconductor substrate by centrifugal force generated by the rotation of the semiconductor substrate to remove the bottom particles.

However, because all the fluids are supplied through one nozzle, the different fluids are mixed to not only have a high cleaning effect, but also cause back contamination and reduce the uniformity of the treatment process.

In addition, in the case of supplying the cleaning fluid of ultrapure water after supplying the fluid through one nozzle, the productivity of equipment is lowered because the cleaning fluid supply time is long for a long time in order to sufficiently remove the fluid component remaining in the nozzle.

The technical problem to be achieved by the present invention is to provide a semiconductor device manufacturing apparatus with improved equipment productivity.

The technical problem of the present invention is not limited to the technical problem mentioned above, and other technical problems not mentioned will be clearly understood by those skilled in the art from the following description.

In order to achieve the above technical problem, a semiconductor device manufacturing apparatus according to an embodiment of the present invention comprises a process chamber, a chuck in which the semiconductor substrate is seated in the process chamber, a plurality of rear nozzles respectively supplying a plurality of fluids to the bottom of the semiconductor substrate; And a rear fluid nozzle for supplying the plurality of fluids to the rear nozzle unit and the plurality of rear nozzles.

Specific details of other embodiments are included in the detailed description and the drawings.

Advantages and features of the present invention and methods for achieving them will be apparent with reference to the embodiments described below in detail with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various forms, and only the present embodiments are intended to complete the disclosure of the present invention, and the general knowledge in the art to which the present invention pertains. It is provided to fully convey the scope of the invention to those skilled in the art, and the present invention is defined only by the scope of the claims. Like reference numerals refer to like elements throughout.

Hereinafter, a semiconductor device manufacturing apparatus according to an exemplary embodiment of the present invention will be described with reference to FIGS. 1 to 3. 1-3 illustrate a rotary cleaning or etching apparatus.

1 is a schematic view showing a semiconductor device manufacturing apparatus according to an embodiment of the present invention, FIG. 2 is a partial perspective view of FIG. 1, and FIG. 3 is a perspective view showing an internal structure of a rear nozzle unit of FIG. 1.

1 to 3, a semiconductor device manufacturing apparatus 1 according to an embodiment of the present invention may include a process chamber 100, a semiconductor substrate protection unit 200, a chuck 300, and a semiconductor substrate rotation unit 400. , The fluid supply device 500 for the rear nozzle, the rear nozzle part 600, the fluid supply device 700 for the upper nozzle, and the outlet 800.

The process chamber 100 is a space for processing a chemical solution treatment process, a rinse process, and a drying process with respect to the semiconductor substrate W, and the semiconductor substrate rotating part 400 is connected to the bottom center. The semiconductor substrate protection unit 200, the chuck 300, the rear nozzle unit 600, the upper nozzle 730, and the outlet 800 are formed in the process chamber 100.

The semiconductor substrate protection unit 200 checks whether the semiconductor substrate W, which has entered the process chamber 100, is seated on the chuck 300, and the semiconductor substrate W that rotates at high speed by the chuck 300 is taken out. Prevents it from popping out. The semiconductor substrate protection unit 200 includes a semiconductor substrate entry slot 210, a semiconductor substrate sensor 220, and a semiconductor substrate guide 230.

The semiconductor substrate entry slot 210 is positioned in parallel with the semiconductor substrate guide 230. The semiconductor substrate W is loaded onto the chuck 300 or unloaded from the chuck 300 through the semiconductor substrate entry slot 210.

At this time, the semiconductor substrate sensor 220 detects the presence or absence of the semiconductor substrate W transferred through the semiconductor substrate entry slot 210 and induces the operation of the semiconductor device manufacturing apparatus 1 to start.

The semiconductor substrate guide 230 prevents the semiconductor substrate W from protruding out by the centrifugal force caused by the rotation of the chuck 300. The semiconductor substrate guide 230 is formed at a predetermined interval L between the chucks 300. This is to allow the fluid which is supplied from the first to fourth rear nozzles 630a, 630b, 630c, and 630d and the upper nozzle 730 to pass through after the process.

The chuck 300 is located in the process chamber 100 so that the semiconductor substrate is seated. In addition, the chuck 300 includes a clamp 310 and a substrate holding part 320. The semiconductor substrate W is fixed to a hole in the clamp 310. In particular, the fixed semiconductor substrate W maintains a constant distance H from the rear nozzle unit 600. This is to ensure a space for the fluid supplied from the rear nozzle unit 600 to clean the rear surface of the semiconductor substrate (W).

Meanwhile, the semiconductor substrate rotating part 400 is connected to the substrate holding part 320 of the chuck 300. The semiconductor substrate rotating part 400 is formed at the center of the bottom surface of the process chamber 100, and rotates the semiconductor substrate W seated on the chuck 300. The semiconductor substrate rotating part 400 includes a rotating driver 410 and a rotating shaft 420.

The rotation driver 410 provides a driving force to rotate the semiconductor substrate W mounted on the chuck. The rotation driver 410 may include a motor, but is not limited thereto. The motor may have a rotation speed of about 1500r.p.m to 4000r.p.m in the cleaning process.

The rotating shaft 420 is installed to penetrate the center of the bottom surface of the process chamber 100. One end of the rotation shaft 420 is coupled to the rotation driving unit 410, and the other end is coupled to the substrate holding unit 320 to transmit the driving force of the rotation driving unit 410 to the chuck 300.

The fluid supply apparatus 500 for the rear nozzle supplies the fluid required for the cleaning or etching process to each of the fluid supply lines 620a, 620b, 620c, and 620d of the rear nozzle unit 600. The fluid supply apparatus 500 for the rear nozzle includes the fluid supply apparatuses 500a, 500b, 500c, and 500d for the first to fourth rear nozzles. The fluid supply apparatuses 500a, 500b, 500c, and 500d for the first to fourth rear nozzles may include the first to fourth fluid reservoirs 510a, 510b, 510c, and 510d and the first to fourth flow rate controllers 520a, respectively. , 520b, 520c, and 520d.

In addition, although not shown in the drawings, the first to fourth flow control units 520a, 520b, 520c, and 520d may have flow meters (not shown) and flow control devices (not shown), respectively. Here, the flow meter (not shown) checks the supply amount of the fluid and sends the supply amount to the flow rate control device. The flow rate adjusting device (not shown) may have an aperture formed therein to finely adjust the flow rate of the fluid passing through each of the fluid supply lines 620a, 620b, 620c, and 620d by adjusting the aperture. Although the flow regulating device is described based on the aperture, any device may be used as long as the flow regulating device is not limited thereto and can achieve the effect of flow adjusting.

In one embodiment of the present invention, the fluid supply apparatus 500a for the first rear nozzle supplies a cleaning solution for SC-1 (Standard Cleaning-1), for example, APM (Ammonium Peroxde Mixture), and the second rear nozzle for The fluid supply device 500b may supply a cleaning solution for SC-2 (Standard Cleaning-2), for example, a Hydrochloric Peroxide Mixture (HPM). In addition, the fluid supply device 500c for the third rear nozzle may supply a rinse solution, for example, ultrapure water, and the fluid supply device 500d for the fourth rear nozzle may supply a drying gas, for example, nitrogen gas. have.

On the other hand, the rear nozzle unit 600 is connected to the fluid supply apparatus 500 for the rear nozzle, and provides the fluids required for the cleaning or etching process on the back of the semiconductor substrate (W). The rear nozzle unit 600 includes a supply line protection tube 610, first to fourth fluid supply lines 620a, 620b, 620c, and 620d, first to fourth rear nozzles 630a, 630b, 630c, and 630d, and an injection hole. 640, a rear nozzle bar 650.

The supply line protection pipe 610 is formed with a predetermined space to position each fluid supply line (620a, 620b, 620c, 620d), it may be separated from the rotating shaft 420 and fixed.

The first to fourth fluid supply lines 620a, 620b, 620c, and 620d are connected to the rear nozzles 630a, 630b, 630c, and 630d, respectively.

On the other hand, the rear nozzle bar 650 is connected to the supply line protective tube 610. The rear nozzle bar 650 provides a space in which the first to fourth rear nozzles 630a, 630b, 630c, and 630d are formed. The rear nozzle bar 650 may have one side extending in the radial direction of the chuck 300. The material of the rear nozzle bar 650 may have a material that is not reactive by the processing fluid of the cleaning process.

The first to fourth rear nozzles 630a, 630b, 630c, and 630d supply the fluid supplied through the fluid supply lines 620a, 620b, 620c, and 620d to the back surface of the semiconductor substrate W. FIG. The first to fourth rear nozzles 630a, 630b, 630c, and 630d may be formed on an upper surface of the rear nozzle bar 650, and may be spaced apart at predetermined intervals. In addition, the first to fourth rear nozzles 630a, 630b, 630c, and 630d may be formed to be parallel to the extension direction of the rear nozzle bar 650 in order to increase the supply surface area of the fluid to the semiconductor substrate W. FIG. In one embodiment of the present invention, but not limited to a cuboid.

The injection holes 640 are positioned on the top surfaces of the rear nozzles 630a, 630b, 630c, and 630d, respectively. The shape of the injection hole 640 may be circular, the diameter of the injection hole 640 may be 0.5 ~ 3.0mm, preferably 0.5 ~ 1.0mm, but is not limited thereto. For example, the injection hole 640 may be formed of a polygon.

The fluid supply apparatus 700 for the upper nozzle includes a fluid storage unit 710, a flow control unit 720, and an upper nozzle 730. The upper nozzle fluid supply device 700 supplies a fluid required for a cleaning or etching process. The fluid stored in the fluid storage unit 710 is supplied to the upper nozzle 730 through the flow control unit 720. Here, the fluid remaining after the process passes between the semiconductor substrate protection unit 200 and the chuck 300 is discharged through the discharge port (800).

The outlet 800 is supplied from the first to fourth rear nozzles 630a, 630b, 630c, and 630d and the upper nozzle 730 to send the remaining fluid after the process to the process chamber 100. The outlet 800 is formed below the substrate holding part 320.

4A and 4B, a cleaning process of a semiconductor device manufacturing apparatus according to an embodiment of the present invention will be described.

First, as shown in FIG. 4A, the APM is supplied to the rear surface of the semiconductor substrate W that rotates.

In detail, the APM is supplied from the fluid supply device 500a for the first rear nozzle, and is supplied through the injection port 640 of the first fluid supply line 620a and the first rear nozzle 630a. The APM removes the bottom particles and organic contaminants while spreading radially along the bottom surface of the semiconductor substrate W (see arrow a) by the centrifugal force of the rotating semiconductor substrate W.

Subsequently, as shown in FIG. 4B, APM supply is stopped and HPM is supplied to the rear surface of the semiconductor substrate W. As shown in FIG.

In detail, the HPM is supplied from the fluid supply device 500b for the second rear nozzle and supplied through the injection port 640 of the second fluid supply line 620b and the second rear nozzle 630b. The HPM removes metal contaminants by spreading radially along the bottom surface of the semiconductor substrate W (see arrow b) by the centrifugal force of the rotating semiconductor substrate W.

Subsequently, as shown in FIG. 4C, the HPM supply is stopped, and ultrapure water is supplied to the rear surface of the semiconductor substrate W. FIG.

In detail, the ultrapure water is supplied from the supply device 500c for the third rear nozzle and is supplied through the injection port 640 of the third fluid supply line 620c and the third rear nozzle 630c. The ultrapure water is radiated along the bottom surface of the semiconductor substrate W by the centrifugal force of the rotating semiconductor substrate W (see arrow c) to remove residual chemical solution and contaminants.

Subsequently, as shown in FIG. 4D, the ultrapure water supply is stopped and nitrogen gas is supplied to the rear surface of the semiconductor substrate W. As shown in FIG.

In detail, the nitrogen gas is supplied from the supply device 500d for the fourth rear nozzle and supplied through the injection port 640 of the fourth fluid supply line 620d and the fourth rear nozzle 630d. The nitrogen gas is dried radially (see arrow d) along the bottom surface of the semiconductor substrate W by the centrifugal force of the rotating semiconductor substrate W to dry the semiconductor substrate W. FIG.

Each of the aforementioned fluid supply is stopped, and the fluid after each process is finished through the discharge port (800).

Although embodiments of the present invention have been described above with reference to the accompanying drawings, those skilled in the art to which the present invention pertains may implement the present invention in other specific forms without changing the technical spirit or essential features thereof. I can understand that. Therefore, it should be understood that the embodiments described above are exemplary in all respects and not restrictive.

According to the semiconductor device manufacturing apparatus of the present invention as described above has one or more of the following effects.

First, each processing fluid is supplied to the back of the semiconductor substrate through the respective rear nozzles to reduce the contamination of the processing fluids to increase the cleaning effect.

Second, plant productivity is increased because the supply time of fluids is reduced.

Claims (3)

Process chambers; A chuck on which a semiconductor substrate is seated in the process chamber; A rear nozzle unit having a plurality of rear nozzles respectively supplying a plurality of fluids to a bottom surface of the semiconductor substrate; And And a fluid supply device for a rear nozzle for supplying the plurality of fluids to the plurality of rear nozzles, respectively. The method of claim 1, The plurality of back nozzles are formed in the semiconductor device manufacturing apparatus spaced apart from each other. The method of claim 1, Each rear nozzle comprises a plurality of injection holes.

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