KR20060116338A - Vertical type furnace - Google Patents

Vertical type furnace Download PDF

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Publication number
KR20060116338A
KR20060116338A KR1020050038496A KR20050038496A KR20060116338A KR 20060116338 A KR20060116338 A KR 20060116338A KR 1020050038496 A KR1020050038496 A KR 1020050038496A KR 20050038496 A KR20050038496 A KR 20050038496A KR 20060116338 A KR20060116338 A KR 20060116338A
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South Korea
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housing
inner tube
boat
outer tube
pockets
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KR1020050038496A
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Korean (ko)
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박정태
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삼성전자주식회사
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Publication of KR20060116338A publication Critical patent/KR20060116338A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

A vertical diffusion furnace is provided to improve the uniformity of thickness in a predetermined thin film by detecting exactly a process temperature in response to each position using a plurality of movable pockets with thermometers. A vertical diffusion furnace comprises a housing(100) with a heater, an outer tube(200) in the housing, an inner tube(300) in the outer tube, a boat, and a plurality of pockets. The boat(400) is used for loading a plurality of wafers. The boat is capable of moving up and down in the inner tube. The plurality of pockets(500) are installed on an outer wall of the housing. The plurality of pockets are capable of moving to and fro, respectively. The pocket has a thermometer(510) capable of reaching the boat. The thermometer of the pocket is composed of a thermocouple.

Description

종형확산로{Vertical type furnace }Vertical type furnace}

도1은 종래의 종형확산로를 보여주는 도면.1 is a view showing a conventional bell spreader.

도2는 본 발명의 실시예에 따른 종형확산로를 보여주는 도면.Figure 2 shows a bell spreader in accordance with an embodiment of the present invention.

*도면의 주요부분에 대한 부호의 설명** Explanation of symbols for main parts of drawings *

10, 100 : 하우징 20, 200 : 외측튜브10, 100: housing 20, 200: outer tube

30, 300 : 내측튜브 40, 400 : 보트30, 300: inner tube 40, 400: boat

41, 410 : 웨이퍼 50, 500 : 내측튜브41, 410: wafer 50, 500: inner tube

51, 510 : 열전대 온도계51, 510: thermocouple thermometer

본 발명은 종형확산로에 관한 것으로, 보다 상세하게는 열전대 온도계를 장착하여 내부의 온도를 지역별로 조절하는 종형확산로에 관한 것이다.The present invention relates to a bell spreader, and more particularly, to a bell spreader for controlling a temperature inside a thermocouple by mounting a thermocouple thermometer.

일반적으로 반도체 소자를 생산하는 공정은 노광, 식각, 확산, 증착 등의 공정을 선택적으로 수행하는 일련의 과정에 의해서 이루어지고, 확산 및 증착 공정은 고온의 분위기에서 공정가스를 주입하여 실리콘웨이퍼 상에서 반응을 일으켜서 이루어지는 공정이다. In general, a process for producing a semiconductor device is performed by a series of processes that selectively perform processes such as exposure, etching, diffusion, and deposition, and the diffusion and deposition processes are reacted on a silicon wafer by injecting a process gas in a high temperature atmosphere. It is a process made by raising.

이러한 공정을 진행하기 위한 반도체 제조 설비로 튜브(tube) 형태의 노(furnace) 장비가 많이 사용되는데, 일반적으로 이런 형태의 장비는 대량의 웨이퍼를 한꺼번에 로딩하여 공정을 진행하는 배치(batch) 방식을 적용하고, 반도체 소자의 제조 공정상 박막을 형성하거나 불순물 이온을 확산시키는 장비로 이용되고 있다. As a semiconductor manufacturing facility for carrying out such a process, a furnace-type furnace equipment is widely used. In general, this type of equipment uses a batch method in which a large amount of wafers are loaded at a time. It is applied to forming a thin film or diffusing impurity ions in the manufacturing process of a semiconductor device.

이러한 장비 가운데 종형확산로(vertical type furnace)가 많이 사용되고 있는데 종형확산로는 화학기상증착장비로서 고온진공분위기에서 공정챔버로 공정가스를 투입하면 공정가스가 서로 반응하여 반응물질을 형성하면서 동시에 압력이 낮은 공간에서 확산되어 웨이퍼 표면에 박막을 적층하는 현상을 이용한다. 그런데 종형확산로에서 공정에 가장 중요한 요소인 온도를 조절하기 위하여 열전대(thermocouple) 온도계가 장착되어 사용된다.Among these equipments, vertical type furnaces are widely used. As vertical type furnaces, chemical vapor deposition equipment is introduced into process chambers at high temperature vacuum atmospheres, the process gases react with each other to form reactants and at the same time It diffuses in a low space and uses the phenomenon of laminating a thin film on the wafer surface. However, thermocouple thermometers are used to control the temperature, which is the most important factor in the process in the vertical diffusion furnace.

도1은 종래의 종형확산로를 보여주는 도면이다.1 is a view showing a conventional vertical diffusion path.

도1에 도시된 바와 같이, 지역별로 열전대 온도계를 장착하여 내부의 온도를 조절하는 본 발명의 종형확산로는 하우징(10), 외측튜브(20), 내측튜브(30) 및 보트(40)를 구비한다. As shown in Figure 1, the vertical diffusion furnace of the present invention to adjust the internal temperature by mounting a thermocouple thermometer for each region to the housing 10, the outer tube 20, the inner tube 30 and the boat 40 Equipped.

하우징(10)은 상기 내측튜브(30)를 가열하기 위한 히터(도면에 표시하지 않음)가 설치되어 있고, 외측튜브(20)는 하우징(10) 내부에 돔 형상으로 형성되어 있다. 내측튜브(30)는 외측튜브(20)의 내부에 설치되어 외측튜브(20)와 연결된 원통 형의 모양을 가지고 있고, 보트(40)는 수평 방향으로 다수의 웨이퍼(41)를 탑재하여 상기 내측튜브(30)의 내부에 수직으로 이동가능 하게 설치된다. The housing 10 is provided with a heater (not shown) for heating the inner tube 30, and the outer tube 20 is formed in a dome shape inside the housing 10. The inner tube 30 is installed inside the outer tube 20 to have a cylindrical shape connected to the outer tube 20, and the boat 40 mounts a plurality of wafers 41 in a horizontal direction to the inner side. It is installed to be movable vertically inside the tube (30).

상기 하우징(10)의 외부에 설치된 포켓(50)은 열전대 온도계(51)를 삽입하여 내측튜브(30)의 온도를 측정하도록 형성된 개구부이다. 따라서 포켓(50)은 내측튜브(30)의 온도를 감지하기 위한 지역별로 설치되어 있다.The pocket 50 installed on the outside of the housing 10 is an opening formed to insert the thermocouple thermometer 51 to measure the temperature of the inner tube 30. Therefore, the pocket 50 is installed for each region for sensing the temperature of the inner tube (30).

그런데 종형확산로에서 예를 들어, 웨이퍼(41)에 증착되는 박막의 두께 균일성과 같은 공정의 특성을 최적화하기 위하여 보트(40)에 로딩된 웨이퍼(41)의 매수에 따라 온도를 감지하여야 하는 위치가 달라진다. However, in the vertical diffusion furnace, for example, in order to optimize the characteristics of the process such as the thickness uniformity of the thin film deposited on the wafer 41, the position at which the temperature must be sensed according to the number of wafers 41 loaded on the boat 40 is provided. Is different.

그러나 종래의 종형확산로에서 상기 포켓(50)의 위치가 하우징(10)의 외부에 고정되어 있어 포켓(50)에 장착된 열전대 온도계(51)로 측정하여 감지할 수 있는 위치는 변할 수 없기 때문에 보트(40)에 로딩된 웨이퍼(41)의 매수에 따라 공정의 특성을 최적화시키는 것이 불가능한 문제가 있다. However, since the position of the pocket 50 is fixed to the outside of the housing 10 in the conventional vertical diffusion furnace, the position which can be detected by measuring by the thermocouple thermometer 51 mounted on the pocket 50 cannot be changed. There is a problem in that it is impossible to optimize the characteristics of the process depending on the number of wafers 41 loaded on the boat 40.

따라서 반도체 소자의 집적도가 증가함에 따라 이에 필요한 공정의 특성을 최적화시키기 위하여 시급한 개선이 필요하다.Therefore, as the degree of integration of semiconductor devices increases, there is an urgent need for improvement in order to optimize the characteristics of the process.

따라서 본 발명은 상기의 문제점을 해결하기 위하여 이루어진 것으로, 본 발명의 목적은 종형확산로에서 공정의 특성을 최적화시키기 위하여 상기 내측튜브의 온도를 감지하는 위치를 보트에 로딩된 웨이퍼의 매수에 따라 변경시킬 수 있는 종형확산로를 제공하는데 있다.Therefore, the present invention has been made to solve the above problems, and an object of the present invention is to change the position of sensing the temperature of the inner tube in accordance with the number of wafers loaded on the boat in order to optimize the characteristics of the process in the vertical diffusion furnace To provide a bell spreader that can be made.

상기의 목적을 달성하기 위한 본 발명의 실시예에 따른 종형확산로는 지역별로 열전대 온도계를 장착하여 내부의 온도를 조절하는 종형확산로에서, 상기 히터가 장착된 하우징; 상기 하우징 내부에 돔 형상으로 형성된 외측튜브; 상기 외측튜브의 내부에 설치되어 상기 외측튜브와 연결된 원통형의 내측튜브; 및 수평 방향으로 다수의 웨이퍼를 탑재하고, 상기 내측튜브의 내부에서 수직으로 이동 가능한 보트를 구비하고, 상기 하우징에 이동가능하게 형성되고, 상기 열전대 온도계를 장착하여 상기 내측튜브의 내부에 연결되는 복수개의 포켓이 형성된 것을 특징으로 한다.In the vertical diffusion furnace according to an embodiment of the present invention for achieving the above object in the vertical diffusion furnace for controlling the temperature of the inside by mounting a thermocouple thermometer for each region, the housing equipped with the heater; An outer tube formed in the housing in a dome shape; A cylindrical inner tube installed inside the outer tube and connected to the outer tube; And a plurality of wafers mounted in a horizontal direction, the boat movable vertically in the inner tube, movable in the housing, and mounted to the thermocouple thermometer and connected to the inner tube. Four pockets are formed.

바람직한 실시예에 있어서, 상기 포켓은 네 개이고, 상기 포켓의 위치는 좌표로 표시하는 것을 특징으로 한다.In a preferred embodiment, the pocket is four, and the location of the pocket is characterized by the coordinates.

이하 첨부한 도면을 참조하여 본 발명의 일 실시예를 상세히 설명한다.Hereinafter, an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

도2는 본 발명의 실시예에 따른 종형확산로를 보여주는 도면이다.2 is a view showing a bell spreader according to an embodiment of the present invention.

도2에 도시된 바와 같이, 지역별로 열전대 온도계를 장착하여 내부의 온도를 조절하는 본 발명의 종형확산로는 하우징(100), 외측튜브(200), 내측튜브(300) 및 보트(400)를 구비한다. As shown in Figure 2, the vertical diffusion furnace of the present invention to control the internal temperature by mounting a thermocouple thermometer for each region to the housing 100, the outer tube 200, the inner tube 300 and the boat 400 Equipped.

하우징(100)은 상기 내측튜브(300)를 가열하기 위한 히터(도면에 표시하지 않음)가 설치되어 있고, 외측튜브(200)는 하우징(100) 내부에 돔 형상으로 형성되어 있다. 내측튜브(300)는 외측튜브(200)의 내부에 설치되어 외측튜브(200)와 연결된 원통형의 모양을 가지고 있고, 보트(400)는 수평 방향으로 다수의 웨이퍼를 탑재하여 상기 내측튜브(300)의 내부에 수직으로 이동가능 하게 설치된다. The housing 100 is provided with a heater (not shown) for heating the inner tube 300, and the outer tube 200 is formed in a dome shape inside the housing 100. The inner tube 300 is installed inside the outer tube 200 and has a cylindrical shape connected to the outer tube 200, and the boat 400 mounts a plurality of wafers in a horizontal direction to the inner tube 300. It is installed to be movable vertically in the interior.

또한 상기 하우징(100)에 설치된 포켓(500)은 열전대 온도계(510)를 장착하여 내측튜브(300) 내부의 온도를 측정하도록 형성된 개구부로써, 하우징(100)의 외부에서 수직 방향으로 이동 가능하게 설치되어 있다. 따라서 포켓(500)은 하우징(100)의 외부에 돌출되어 온도를 감지하기 위한 지역별로 설치되어 적어도 네 개가 배치된 것이 바람직하다. In addition, the pocket 500 installed in the housing 100 is an opening formed to mount the thermocouple thermometer 510 to measure the temperature inside the inner tube 300, and is installed to be movable in a vertical direction from the outside of the housing 100. It is. Therefore, the pocket 500 is protruded to the outside of the housing 100, it is preferable that at least four are disposed for each region for sensing the temperature.

따라서 포켓(500)의 개수는 내측튜브(300)의 온도를 감지하기 위하여 필요한 지역의 개수나 히터의 개수에 따라 변경될 수 있다. 이때 포켓(500)의 이동 가능 거리는 포켓(500) 사이의 거리에 따라 변경되어 정한다. 물론 포켓(500)의 위치는 하우징(100)의 외부에 기준을 정하여 좌표로 표시하여 설정하는 것이 편리하다. Therefore, the number of pockets 500 may be changed according to the number of regions or the number of heaters required to detect the temperature of the inner tube 300. In this case, the movable distance of the pocket 500 is changed and determined according to the distance between the pockets 500. Of course, the location of the pocket 500 is convenient to set the reference to the outside of the housing 100 to display the coordinates.

이상에서, 본 발명의 구성 및 동작을 상기한 설명 및 도면에 따라 도시하였지만, 이는 예를 들어 설명한 것에 불과하며 본 발명의 기술적 사상 및 특허청구 범위를 벗어나지 않는 범위 내에서 다양한 변화 및 변경이 가능함은 물론이다.In the above, the configuration and operation of the present invention have been shown in accordance with the above description and drawings, but this is merely described, for example, and various changes and modifications are possible without departing from the spirit and scope of the present invention. Of course.

상술한 바와 같이 본 발명에 의하면, 상기 포켓의 위치를 수직 방향으로 이동가능하게 하우징에 설치하여 본 발명의 종형확산로에 로딩되는 웨이퍼의 매수에 따라 공정을 최적화시키기 위하여 포켓을 이동시켜 삽입된 열전도 온도계로 내측튜브의 온도를 감지할 수 있다. 따라서 종래와 달리 보트에 로딩되는 웨이퍼의 매수에 연동하여 공정 온도를 상기 보트에서 웨이퍼가 로딩된 모든 위치에서 최적화시켜 박막의 두께 및 두께의 균일성을 향상시키는 효과가 있다.As described above, according to the present invention, the thermal conductivity inserted by moving the pocket in order to optimize the process according to the number of wafers loaded in the vertical diffusion furnace of the present invention by installing the location of the pocket in the housing to be movable in the vertical direction. The thermometer can detect the temperature of the inner tube. Therefore, unlike in the related art, in accordance with the number of wafers loaded in the boat, the process temperature is optimized at all positions in which the wafer is loaded in the boat, thereby improving the thickness and uniformity of the thin film.

Claims (3)

지역별로 열전대 온도계를 장착하여 내부의 온도를 조절하는 종형확산로에서,In the vertical diffusion furnace that controls the internal temperature by installing a thermocouple thermometer for each region, 상기 히터가 장착된 하우징;A housing equipped with the heater; 상기 하우징 내부에 돔 형상으로 형성된 외측튜브;An outer tube formed in the housing in a dome shape; 상기 외측튜브의 내부에 설치되어 상기 외측튜브와 연결된 원통형의 내측튜브; 및 A cylindrical inner tube installed inside the outer tube and connected to the outer tube; And 수평 방향으로 다수의 웨이퍼를 탑재하고, 상기 내측튜브의 내부에서 수직으로 이동 가능한 보트를 구비하고, A plurality of wafers mounted in a horizontal direction, the boat being vertically movable inside the inner tube, 상기 하우징에 이동가능하게 형성되고, 상기 열전대 온도계를 장착하여 상기 내측튜브의 내부에 연결되는 복수개의 포켓이 형성된 것을 특징으로 하는 종형확산로. And a plurality of pockets movably formed in the housing and connected to the inside of the inner tube by mounting the thermocouple thermometer. 제1항에 있어서,The method of claim 1, 상기 포켓은 네 개인 것을 특징으로 하는 종형확산로.The vertical diffusion furnace, characterized in that the four pockets. 제1항 또는 제2항에 있어서,The method according to claim 1 or 2, 상기 포켓의 위치는 좌표를 결정하는 것을 특징으로 하는 종형확산로.And a position of the pocket determines a coordinate.
KR1020050038496A 2005-05-09 2005-05-09 Vertical type furnace KR20060116338A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100922256B1 (en) * 2007-12-14 2009-10-15 주식회사 동부하이텍 Semiconductor manufacturing vertical diffusion furnace equipped with thermocouple

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100922256B1 (en) * 2007-12-14 2009-10-15 주식회사 동부하이텍 Semiconductor manufacturing vertical diffusion furnace equipped with thermocouple

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