KR20060113001A - Defect detecting method for light emitting display - Google Patents

Abstract

A defect judging method of a light emitting display is provided to determine that defective pixels are included in the light emitting display, if the amount of leak current is over 1muA in applying inverse voltage. A defect judging method of a light emitting display includes the steps of: manufacturing the light emitting display displaying an image by pixels including a light emitting element and a pixel circuit; applying inverse voltage to the light emitting element; and judging defects of the light emitting display by measuring the leak current flowing in light emitting element. The defect judging method determines that the light emitting display is defective if the absolute value of the leak current is over a predetermined value.

Description

DEFECT DETECTING METHOD FOR LIGHT EMITTING DISPLAY}

1 is a view showing a general light emitting device.

2 is a structural diagram of a first embodiment of a light emitting display device according to the present invention;

3 is a circuit diagram illustrating a pixel employed in the light emitting display device of FIG. 2.

4 is a structural diagram illustrating a second embodiment of a light emitting display device according to the present invention.

FIG. 5 is a circuit diagram illustrating a first embodiment of a pixel employed in the light emitting display device of FIG. 4.

6 is a circuit diagram illustrating a second embodiment of a pixel employed in the light emitting display device of FIG. 4.

7A and 7B are diagrams showing the amount of leakage current flowing through the light emitting display device to which the reverse voltage is applied.

*** Explanation of symbols on main parts of drawings ***

100: pixel portion 200: data driver

300: scan driver 400: power supply

The present invention relates to a method of determining a failure of a light emitting display device. In detail, a failure of a light emitting display device for determining a panel having defective pixels by measuring a leakage current by applying a reverse voltage to the light emitting device is determined. It is about how to.

BACKGROUND ART A thin, lightweight flat panel display is used as a display device of a portable information terminal such as a personal computer, a cellular phone, a PDA, or a monitor of various information devices. Such flat panel displays include LCDs using liquid crystal panels, organic light emitting displays using organic light emitting diodes, and PDPs using plasma panels.

In such a flat panel display, a plurality of pixels are arranged on a substrate to form a display area, and a scan line and a data line are connected to each pixel to selectively apply a data signal to the pixel for display.

Among the current flat panel display devices, the light emitting display device has a response speed of about 30,000 times faster than the LCD device, and thus, it is easy to implement a video, emits light by itself, and has a high brightness and wide viewing angle. I am getting it.

 The light emitting display includes an organic light emitting display using an organic light emitting element and an inorganic light emitting display using an inorganic light emitting element. The organic light emitting diode is also referred to as an organic light emitting diode (OLED), and includes an anode, a cathode, and an organic light emitting layer disposed therebetween to emit light by a combination of electrons and holes. The inorganic light emitting device is also referred to as a light emitting diode (LED) and, unlike an organic light emitting diode, includes an inorganic light emitting layer, for example, a light emitting layer made of a PN bonded semiconductor.

1 is a view showing a general light emitting device. Referring to FIG. 1, the light emitting device includes an emission layer (EL), a hole transfer layer (HTL), and an electron transport layer (ETL) formed between the anode electrode 20 and the cathode electrode 21. ).

The anode electrode 20 is connected to the first power source to supply holes to the light emitting layer EL. The cathode electrode 21 is connected to a second power source lower than the first power source to supply electrons to the light emitting layer EL. That is, the anode electrode 20 has a higher potential of positive polarity (+) than the cathode electrode 21, and the cathode electrode 21 has a relatively low polarity (−) than the anode electrode 20. Has a potential.

The hole transport layer HTL accelerates holes supplied from the anode electrode 20 and supplies them to the light emitting layer EL. The electron transport layer ETL accelerates and supplies electrons supplied from the cathode electrode 21 to the emission layer EL. Holes supplied from the hole transport layer HTL and electrons supplied from the electron transport layer ETL collide in the emission layer EL. In this case, electrons and holes are recombined in the emission layer EL, thereby generating predetermined light. Subsequently, the emission layer EL is formed of an organic material to generate light of any one of red (R), green (G), and blue (B) when electrons and holes recombine.

Meanwhile, the light emitting device includes a hole injection layer (HIL) located between the hole transport layer (HTL) and the anode electrode 20, and an electron injection layer located between the electron transport layer (ETL) and the cathode electrode 21. (Electron Injection Layer: EIL) is further included. The hole injection layer HIL supplies holes to the hole transport layer HTL. The electron injection layer EIL supplies electrons to the electron transport layer ETL.

In the light emitting display device which displays an image using a pixel including the light emitting device configured as described above, a bad pixel may be generated in the pixel during the pixel formation process, and the bad pixel expresses the image of the light emitting display device. There is a problem that the dignity is lowered. In addition, when the light emitting display device is used for a long time, a defect occurs in the pixel.

Accordingly, the present invention has been made to solve the problems of the prior art, and an object of the present invention is to identify the amount of leakage current generated by applying a reverse voltage to the light emitting device, and the amount of leakage current is high. The present invention provides a method for determining a failure of a light emitting display device, which allows the light emitting display device having a bad pixel to be identified.

In order to achieve the above object, a first aspect of the present invention provides a method of manufacturing a light emitting display device that displays an image by a pixel including a light emitting element and a pixel circuit, applying a reverse voltage to the light emitting element, and A method of determining a failure of a light emitting display device, the method including determining a failure of the light emitting display device by measuring a leakage current flowing through the light emitting device in a step of applying a voltage.

According to a second aspect of the present invention, a first voltage level is received through a first terminal and a second voltage level lower than the first voltage level through a second terminal, and a data signal is received through a data line. Manufacturing a light emitting display device including a pixel which emits light by driving a current toward a second terminal from a terminal, wherein the voltage level is higher than the third voltage level at the first terminal and the third voltage level at the second terminal; A high voltage level is transferred, and a difference between the third voltage level and the fourth voltage level is greater than a difference between the first voltage level and the second voltage level; A method of determining a failure of a light emitting display device may include determining a failure of a light emitting display device by measuring an amount of current flowing between the first terminal and the second terminal in the step.

Hereinafter, an embodiment of the present invention will be described with reference to the accompanying drawings.

2 is a structural diagram of a first embodiment of a light emitting display device according to the present invention; Referring to FIG. 2, the light emitting display device includes a pixel unit 100 for displaying an image, a data driver 200 for transmitting a data signal, a scan driver 300 for transmitting a scan signal, and a power supply unit 400. Include.

The pixel unit 100 includes scan lines S1, S2, ... Sn-1, Sn arranged in the horizontal direction and data lines D1, D2, .. Dm-1, Dm arranged in the vertical direction. A plurality of pixels 110 are formed in a region where the scan lines S1, S2, ... Sn-1, Sn and the data lines D1, D2, .. Dm-1, Dm cross each other to form a plurality of pixels 110 through the scan lines and the data lines. The image is displayed using the received signal. In addition, the plurality of pixels 110 may be driven by receiving the first power source ELVdd and the second power source ELVss from the power supply unit 400. The first power source ELVdd is connected to the pixel unit 100 in the form of a wire to transfer the voltage of the first power source ELVdd to each pixel, and the second power source ELVss is laminated on the front surface of the pixel unit 100. The current flowing in the pixel may flow out to the second power source ELVss.

The data driver 200 outputs a data signal, and is connected to the data lines D1, D2... Dm-1, Dm arranged in the vertical direction of the pixel unit 100 to transmit the data signal to the pixel unit 100. To pass. When the reverse bias voltage is applied to the light emitting display device, the data driver 200 has a voltage level lower than that of the first power supply ELVdd.

The scan driver 300 receives and drives the third and fourth power sources VVdd and VVss from the power supply unit 400 to output scan signals, and scan lines S1 and S2 arranged in the horizontal direction of the pixel unit 100. And ... are connected to Sn-1 and Sn to transfer the scanning signal to the pixel unit 100.

The power supply unit 400 transfers the first power source ELVdd and the second power source ELVss to the pixel unit 100. The power supply unit 400 allows the first power source ELVdd to have a higher voltage level than the second power source ELVss when the light emitting display device operates normally. When the reverse voltage is applied to the light emitting display device, the voltage level of the first power source ELVdd is lower than the voltage level of the second power source ELVss.

3 is a circuit diagram illustrating a pixel employed in the light emitting display device of FIG. 2. Referring to FIG. 3, a pixel includes a light emitting element OLED and a pixel circuit, and the pixel circuit includes a first transistor M1, a second transistor M2, a third transistor M3, and a fourth transistor ( M4), a fifth transistor M5, a first capacitor Cst, and a second capacitor Cvth. The first to fifth transistors M1 to M5 have a source, a drain, and a gate, and the source and the drain are not physically different and may be referred to as first and second electrodes. In addition, the first capacitor Cst and the second capacitor Cvth include first and second electrodes. The first to fourth transistors M1 to M4 are implemented as P MOS transistors, and the fifth transistor is implemented as N MOS transistors.

In addition, the scan line Sn, the data line Dm, and the first power supply ELVdd are connected to the pixel. The scanning line Sn is formed in the row direction, and the data line Dm and the first power source ELVdd are formed in the column direction.

The first transistor M1 has a source connected to a first power source ELVdd, a drain connected to a first node A, a gate connected to a second node B, and transmitted to a second node B. In response to this, the driving current flows to the first node A. FIG.

The second transistor M2 has a source connected to the data line Dm, a drain connected to the third node C, and a gate connected to the first scan line and selectively transmitted by the first scan signal transmitted through the first scan line. The data signal is transmitted to the third node C.

The third transistor M3 has a source connected to the first node A, a drain connected to the second node B, a gate connected to the second scan line Sn-1, and a second scan line Sn-1. The first transistor M1 is selectively diode-connected by equalizing the voltages of the first node A and the second node B by the second scan signal transmitted through the same. The second scan signal is a scan signal that selects the second transistor M2 located in one pixel row to transmit the data signal to a pixel located in a row before the first scan signal that transfers the data signal.

The fourth transistor M4 has a source connected to the first power supply ELVdd, a drain connected to the third node C, and a gate connected to the second scan line Sn-1, so that the second scan line Sn-1 The voltage of the first power line is selectively transferred to the third node by the second scan signal transmitted through the second scan signal.

The fifth transistor M5 has a source connected to the first node A, a drain connected to the light emitting device, and a gate connected to the second scan line Sn-1, and transmitted through the second scan line Sn-1. The driving current transmitted through the first node A is transmitted to the light emitting device by the second scan signal. At this time, the third transistor M3 and the fourth transistor M4, which are implemented by the N MOS transistor and are implemented by the P MOS transistor operated by the second scan signal, are turned on. It is on at any other time except to be off.

The first capacitor Cst has a first electrode connected to the first power source ELVdd and a second electrode connected to the third node C, so that the first capacitor Cst has the power of the first power source ELVdd according to the operation of the fourth transistor M4. The voltage corresponding to the voltage and the voltage of the data signal is stored and maintained for a predetermined time.

The second capacitor Cvth has a first electrode connected to the second node B and a second electrode connected to the third node C, so that the second transistor Cvth is connected to the third node M1 according to the operation of the third transistor M3. The threshold voltage is stored and maintained for a certain time.

The light emitting device OLED has an anode electrode connected to the fifth transistor M5 and a cathode electrode connected to the second power source ELVss to emit light by a current flowing from the fifth transistor M5.

When a reverse voltage is transmitted to a pixel including a plurality of pixels configured as described above, a leakage current is generated in the pixel circuit. In the case of a defective pixel, a leakage current flowing through the defective pixel due to a short circuit of the pixel circuit flows through the normal pixel. It will be larger than the amount of current.

Table 1 shows the voltage (normal condition) during normal operation and the voltage (reverse aging condition) when the leakage current is measured by applying a reverse voltage to the pixel.

Normal condition Reverse Aging Condition First power  5 V  1 V 2nd power -6V 13 V Third power source 5 V 5 V 4th power -7V -7V Data signal  0-5V -2V Light emitting element anode voltage - 1 V

Referring to Table 1, in the reverse aging condition, the first power supply has a voltage of 1V and the second power supply has a voltage of 13V. In this state, a voltage of 13 V is applied to the cathode electrode of the light emitting device OLED, and a voltage of 1 V is applied to the anode electrode of the light emitting device OLED so that a high voltage is applied to the cathode and a low voltage is applied to the anode electrode to emit light. A reverse voltage of 12V difference is applied to the device OLED. When the reverse voltage is applied, a leakage current flows in the anode direction from the cathode of the light emitting device OLED.

At this time, the scan driver 300 becomes the same condition as the normal condition under the reverse aging condition, generates the same signal, and the second scan signal output by the scan driver 300 has the same voltage level. The data signal has a voltage of −2 V to prevent the leakage current from being blocked by the first transistor M1.

If the current amount exceeds the reference value, the current is measured as a defective pixel, and if the current amount is below the reference value, the current pixel is identified.

4 is a structural diagram illustrating a second embodiment of a light emitting display device according to the present invention. Referring to FIG. 4, the light emitting display device includes a pixel unit 100 for displaying an image, a data driver 200 for transmitting a data signal, a scan driver 300 for transmitting a scan signal and a light emission control signal, and a power supply unit. 400.

The pixel unit 100 has scan lines S1, S2, ... Sn-1, Sn arranged in the horizontal direction, and emission control lines E1, E2, En-1, En arranged in the vertical direction. Data lines D1, D2, .. Dm-1, Dm are formed and the scan lines S1, S2, ... Sn-1, Sn intersect with the data lines D1, D2, .. Dm-1, Dm. A plurality of pixels 110 are formed in one region to display an image by using signals transmitted through a scan line, a light emission control line, and a data line. In addition, the plurality of pixels 110 are driven by receiving the first power source ELVdd and the second power source ELVss from the power supply unit 400. The first power source ELVdd is connected to the pixel unit 100 in the form of a wire to transfer the voltage of the first power source ELVdd to each pixel, and the second power source ELVss is laminated on the front surface of the pixel unit 100. The current flowing in the pixel may flow out to the second power source ELVss.

The data driver 200 outputs a data signal, and is connected to the data lines D1, D2... Dm-1, Dm arranged in the vertical direction of the pixel unit 100 to transmit the data signal to the pixel unit 100. To pass. When the reverse voltage is applied to the light emitting display device, the data driver 200 has a voltage level lower than that of the first power supply ELVdd.

The scan driver 300 receives and drives the third and fourth power sources VVdd and VVss from the power supply unit 400 to output scan signals and emission control signals, and scan lines arranged in the horizontal direction of the pixel unit 100. (S1, S2, ... Sn-1, Sn) and the light emission control lines E1, E2, ... En-1, En transfer the scan signal and the light emission control signal to the pixel portion 100. .

The power supply unit 400 transfers the first power source ELVdd and the second power source ELVss to the pixel unit 100. The power supply unit 400 allows the first power source ELVdd to have a higher voltage level than the second power source ELVss when the light emitting display device operates normally. When the reverse bias voltage is applied to the light emitting display device, the voltage level of the first power supply ELVdd is lower than the voltage level of the second power supply ELVss.

FIG. 5 is a circuit diagram illustrating a first embodiment of a pixel employed in the light emitting display device of FIG. 4. Referring to FIG. 5, a pixel includes a light emitting element and a pixel circuit, and the pixel circuit includes first to fifth transistors M1 to M5 and first and second capacitors Cst and Cvth. In addition, the first to fourth transistors M1 to M4 are implemented as P MOS transistors, and the fifth transistor M5 is implemented as N MOS transistors.

The first transistor M1 has a source connected to a first power source ELVdd, a drain connected to a first node A, a gate connected to a second node B, and a voltage applied to the second node B. This causes the current to flow from the source to the drain.

The second transistor M2 has a source connected to the data line Dm, a drain connected to the third node C, a gate connected to the first scan line Sn, and transferred through the first scan line Sn. The data signal is selectively transmitted to the third node C by one scanning signal.

The third transistor M3 has a source connected to the first node A, a drain connected to the second node B, a gate connected to the second scan line Sn-1, and a second scan line Sn-1. The first transistor M1 is selectively diode-connected by the second scan signal transmitted through the second scan signal.

The fourth transistor M4 has a source connected to the first power supply ELVdd, a drain connected to the third node C, and a gate connected to the second scan line Sn-1, so that the second scan line Sn-1 The voltage level of the first power source ELVdd is selectively transmitted to the third node C by the second scan signal transmitted through the second scan signal.

In the fifth transistor M5, a source is transferred to the first node A, a drain is connected to an anode electrode of the light emitting device OLED, and a gate is connected to an emission control line En to selectively emit an emission control line En. The current flowing in the direction from the source to the drain of the first transistor M1 is selectively transmitted to the light emitting device OLED by the light emission control signal transmitted through the light emitting control signal.

When the first capacitor Cst has a first electrode connected to a first power source ELVdd and a second electrode connected to a third node C to transmit a data signal to the third node C, the data signal and the first To store the voltage by the power source (ELVdd).

In the second capacitor Cvth, the first electrode is connected to the third node C and the second electrode is connected to the second node B so that the first transistor M1 is diode-connected by the third transistor M3. In this case, the threshold voltage of the first transistor M1 is stored.

The light emitting device OLED has an anode electrode connected to the fifth transistor M5 and a cathode electrode connected to the second power source ELVss to emit light by a current flowing from the fifth transistor M5.

Voltages corresponding to Table 1 are applied to the pixels of the light emitting display device implemented as described above.

When the voltage under the reverse aging condition is transmitted to the pixel, a leakage current is generated in the pixel circuit. The leakage current flowing through the defective pixel is larger than the leakage current flowing through the normal pixel due to a short circuit of the pixel circuit.

6 is a circuit diagram illustrating a second embodiment of a pixel employed in the light emitting display device of FIG. 4. Referring to FIG. 6, a pixel includes a light emitting element and a pixel circuit, and the pixel circuit includes first to fifth transistors M1 to M5 and first and second capacitors Cst and Cvth.

The first transistor M1 has a source connected to a first power source ELVdd, a drain connected to a first node A, a gate connected to a second node B, and a voltage applied to the second node B. This causes the current to flow from the source to the drain.

The second transistor M2 has a source connected to the data line Dm, a drain connected to the third node C, a gate connected to the first scan line Sn, and transferred through the first scan line Sn. The data signal is selectively transmitted to the third node C by one scanning signal.

The third transistor M3 has a source connected to the first node A, a drain connected to the second node B, a gate connected to the second scan line Sn-1, and a second scan line Sn-1. The first transistor M1 is selectively diode-connected by the second scan signal transmitted through the second scan signal.

The fourth transistor M4 has a source connected to the first power supply ELVdd, a drain connected to the third node C, and a gate connected to the second scan line Sn-1, so that the second scan line Sn-1 The voltage of the first power source ELVdd is selectively transferred to the third node C by the second scan signal transmitted through the second scan signal.

In the fifth transistor M5, a source is transferred to the first node A, a drain is connected to an anode electrode of the light emitting device OLED, and a gate is connected to an emission control line En to selectively emit an emission control line En. The current flowing in the direction from the source to the drain of the first transistor M1 is selectively transmitted to the light emitting device OLED by the light emission control signal transmitted through the light emitting control signal.

When the first capacitor Cst has a first electrode connected to a first power source ELVdd and a second electrode connected to a third node C to transmit a data signal to the third node C, the data signal and the first The predetermined voltage is stored by the voltage of the power supply ELVdd.

In the second capacitor Cvth, the first electrode is connected to the third node C and the second electrode is connected to the second node B so that the first transistor M1 is diode-connected by the third transistor M3. In this case, the threshold voltage of the first transistor M1 is stored.

The light emitting device OLED has an anode electrode connected to the fifth transistor M5 and a cathode electrode connected to the second power source ELVss to emit light by a current flowing from the fifth transistor M5.

Table 2 shows the voltage (normal condition) during normal operation and the voltage (reverse aging condition) when the leakage current is measured by applying a reverse voltage to the pixel.

Normal condition Reverse Aging Condition First power  5 V  1 V 2nd power -6V 20 V Third power source 5 V 5 V 4th power -7V -7V Data signal  0-5V -2V Light emitting element anode voltage - 8V

Referring to Table 2, a voltage of 8V is applied to the anode electrode of the light emitting device under the reverse aging condition, and a voltage of 12V is applied to both ends of the light emitting device when the second power supply voltage is 20V. Therefore, unlike the circuits of FIGS. 3 and 5 in which the fifth transistor M5 is implemented as an N MOS transistor, the fifth transistor M5 is implemented as a P MOS transistor to emit light when a larger voltage is applied to the second power source. A leakage current is generated in the device OLED.

7A and 7B are diagrams showing the amount of leakage current flowing through the light emitting display device to which the reverse voltage is applied. FIG. 7A illustrates an amount of current flowing through the light emitting display device shown in FIGS. 2 and 4, and FIG. 7B shows an enlarged range of a leakage current of 10 mA or less.

The reverse voltage application condition was such that the reverse voltage of the voltage difference of 12V was maintained between the anode and the cathode of the light emitting device for 1 minute. Referring to FIGS. 7A and 7B, 1 to 23 represent respective numbers of the light emitting display devices, and the numbers of leakage currents flowing by applying a reverse voltage to each number are represented. 5, 10, 11, and 16 represent the amount of leakage current flowing by applying a reverse voltage to the light emitting display device which does not include the defective pixel. In the light emitting display device in which the defective pixel appears, the current amount of leakage current is 1 mA or more, and in the light emitting display device in which the defective pixel does not appear, the current amount of the leakage current is 0.5 mA or less.

Therefore, when the reverse current is applied, if the current amount of the leakage current exceeds 1 mA, it can be regarded as a light emitting display device including a defective pixel.

While preferred embodiments of the present invention have been described using specific terms, such descriptions are for illustrative purposes only and it is understood that various changes and modifications may be made without departing from the spirit and scope of the following claims. You must lose.

According to the method of determining a failure of a light emitting display device according to the present invention, the leakage current flowing through the light emitting device is measured while a reverse voltage is applied to the light emitting device to determine whether a latent defective pixel is included in the light emitting display device.

Therefore, it is possible to prevent the light emitting display device containing defective pixels from being distributed on the market.

Claims (17)

Manufacturing a light emitting display device for displaying an image by a pixel having a light emitting element and a pixel circuit; Applying a reverse voltage to the light emitting device; And And measuring the leakage current flowing through the light emitting device in the step of applying the reverse voltage to determine the failure of the light emitting display device. The method of claim 1, And determining that the light emitting display device is defective if the absolute value of the leakage current is greater than or equal to a predetermined value. The method of claim 2, And the predetermined value is 1 ms. The method of claim 1, And the reverse voltage has a difference of at least 12V. The method of claim 1, wherein the pixel circuit A first transistor generating a driving current by a voltage applied to the gate; A second transistor which transfers the data signal by the first scan signal; A first capacitor for storing a voltage corresponding to a difference between a first power supply and the data signal; A second capacitor storing the threshold voltage of the first transistor; A third transistor configured to diode-connect the first transistor by a second scan signal such that the threshold voltage of the first transistor is stored in the second capacitor; A fourth transistor configured to store a voltage corresponding to a difference between the first power supply and the data signal in the first capacitor by the second scan signal; And And a fifth transistor configured to transfer the driving current to the light emitting device by the second scan signal. The method of claim 5, And the second scan signal is a scan signal for selecting a row before the first scan signal. The method of claim 1, wherein the pixel circuit A first transistor generating a driving current by a voltage applied to the gate; A second transistor which transfers a data signal by a first scan signal to a gate of the first transistor; A first capacitor for storing a voltage corresponding to a difference between a first power supply and the data signal; A second capacitor storing the threshold voltage of the first transistor; A third transistor configured to diode-connect the first transistor by a second scan signal such that the threshold voltage of the first transistor is stored in the second capacitor; A fourth transistor configured to store a voltage corresponding to a difference between the first power supply and the data signal in the first capacitor by the second scan signal; And And a fifth transistor configured to transmit the driving current to the light emitting device by a light emission control signal. The method of claim 7, wherein The second scan signal is a scan signal for selecting a row before the first scan signal, and the emission control signal is an off signal when the first scan signal and the second scan signal are on signals. Way. The method of claim 7, wherein The first to fourth transistors are implemented as P-MOS transistors, and the fifth transistor is implemented as an N-MOS transistor. The method of claim 7, wherein The method of claim 1, wherein the first to fifth transistors are implemented with P MOS transistors. A first voltage level is received through a first terminal and a second voltage level lower than the first voltage level through a second terminal, and a data signal is received through a data line from the first terminal to the second terminal. Manufacturing a light emitting display device including a pixel for driving a current to emit light; The third terminal transmits a third voltage level to the first terminal and a fourth voltage level higher than the third voltage level to the second terminal, and the difference between the third voltage level and the fourth voltage level is determined by the third voltage level. Applying a reverse voltage greater than the difference between the first voltage level and the second voltage level; And And determining the failure of the light emitting display device by measuring the amount of current flowing between the first terminal and the second terminal in the reverse voltage applying step. The method of claim 11, And the difference between the third voltage level and the fourth voltage level is greater than the difference between the first voltage level and the second voltage level. The method of claim 11, And a voltage level of the data signal is lower than a voltage level of the third power supply. The method of claim 11, wherein the pixel is Light emitting element; A first transistor connected to a first electrode, a second electrode to a first node, and a gate connected to the first node; A second transistor having a first electrode connected to the data line, a second electrode connected to the second node, and a gate connected to the first scan line; A third transistor having a first electrode connected to the first node, a second electrode connected to a third node, and a gate connected to a second scan line; A fourth transistor connected to the first terminal, a second electrode connected to the second node, and a gate connected to the second scan line; A fifth transistor having a first electrode connected to the first node, a second electrode connected to the light emitting element, and a gate connected to the second scan line; A first capacitor connected to the first terminal and a second electrode connected to the second node; And The method of claim 1, wherein the first electrode is connected to the second node, the second electrode includes a second capacitor, and the fifth transistor maintains a different state from the third and fourth transistors. The method of claim 1, wherein the pixel Light emitting element; A first transistor connected to a first electrode, a second electrode to a first node, and a gate connected to the first node; A second transistor having a first electrode connected to the data line, a second electrode connected to the second node, and a gate connected to the first scan line; A third transistor having a first electrode connected to the first node, a second electrode connected to a third node, and a gate connected to a second scan line; A fourth transistor connected to the first terminal, a second electrode connected to the second node, and a gate connected to the second scan line; A fifth transistor having a first electrode connected to the first node, a second electrode connected to the light emitting element, and a gate connected to a light emission control line; A first capacitor connected to the first terminal and a second electrode connected to the second node; And The method of claim 1, wherein the first electrode is connected to the second node, the second electrode includes a second capacitor, and the fifth transistor maintains a different state from the third and fourth transistors. The method of claim 15, The first to fourth transistors are implemented as P-MOS transistors, and the fifth transistor is implemented as an N-MOS transistor. The method of claim 15, The method of claim 1, wherein the first to fifth transistors are implemented with P MOS transistors.

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