KR20060109294A - Gas supplying device and film forming device - Google Patents

Abstract

A gas supplying apparatus and a film forming apparatus are provided to prevent contact of first gas and second gas in a gas shower head by accurately sealing a gap between a first gas supplying route and a gas diffusion region where the second gas is diffused. A gas shower head(4) is comprised of a base member(5) that is an upper part thereof and a shower plate(6) that is a lower part. A fringe section of a circular plate(51) is risen from the base member. A flange(52a) is formed on an upper end of a risen fringe unit(52). An insulating member is installed on an inner fringe unit of an opening unit of a processing container to insulate the gas shower head and the processing container. The base member is installed to cover the opening unit. A heat insulation member is installed on an upper portion of the base member.

Description

GAS SUPPLYING DEVICE AND FILM FORMING DEVICE}

1 is a longitudinal side view showing a CVD apparatus incorporating a gas supply apparatus according to an embodiment of the present invention;

2 is a longitudinal sectional view showing a gas supply device according to an embodiment of the present invention;

3 is a longitudinal sectional view showing a main part of a gas supply device according to an embodiment of the present invention;

4 is a longitudinal sectional view showing an exploded perspective view of a main part of a gas supply device according to an embodiment of the present invention;

5 is a bottom view showing an upper member of a shower plate of a gas supply device according to an embodiment of the present invention;

6 is a longitudinal sectional view showing a main part of a gas supply device according to another embodiment of the present invention;

7 is a longitudinal sectional view showing a conventional gas supply device.

Explanation of symbols for the main parts of the drawings

2: processing container 4: gas shower head (gas supply device)

5 base member 6 shower plate

21: stage (substrate mount) 50: gas diffusion space

53: first gas supply pipe 54: second gas supply pipe

73: metal gasket 75: O-ring

80: second gas supply hole 91: first gas supply hole

The present invention uses, for example, a gas supply device and a gas supply device for supplying a plurality of kinds of gases separately into a processing container from a plurality of gas supply holes facing the substrate, in order to perform a film formation process on the substrate. It relates to a film forming apparatus.

One of the semiconductor fabrication processes is a film formation process, which is usually performed by vacuuming or pyrolyzing the processing gas under vacuum atmosphere and depositing activated species or reaction products on the substrate surface. In the film forming process, there is a process of reacting a plurality of kinds of gases to form a film, and the process includes a metal such as Ti, Cu, Ta, or a metal compound such as TiN, TiSi, WSi, or SiN, SiO _2. Formation of an insulating film and a thin film.

An apparatus for performing such a film forming process is a gas generally referred to as a gas shower head such that a mounting table for mounting a substrate is disposed in a processing chamber constituting a vacuum chamber while facing the mounting table on top of the processing container. A supply apparatus is provided, and a heating apparatus, a plasma generating means, etc. which are means for supplying energy to the gas in a process container are combined and provided. Here, as a method of supplying a plurality of types of gases from the gas shower head into the processing container, when a plurality of gases are supplied from the common gas supply path into the processing container, reaction products may occur in the gas shower head, so that CVD (chemical In general, a shower head used in a film deposition apparatus employs a structure in which a first gas and a second gas are ejected from separate gas supply holes and supplied into a processing container.

Fig. 7 is a view showing the structure of a gas shower head described in Japanese Laid-Open Patent Publication No. 2002-327274 (Fig. 3), which includes a base member 11 that closes an opening in an upper portion of a processing container, The shower plate 12 provided in the lower side of the base member 11 is provided. An upper gas supply path 13 for the first gas is formed in the center of the base member 11, and an upper part of the upper gas supply path 13 communicates with the conduit 14. The region surrounding the outlet of the upper supply passage 13 in the base member 11 is formed as a recess 15, while the lower supply passage 16 for the first gas is located at the center of the shower plate 12. Protrudes in a tubular shape, and the upper end portion thereof is formed as a flange 17, and the upper feed passage 13 and the lower feed passage 16 communicate with each other in the state in which the flange 17 is accommodated in the recess 15. That is, the shower plate 12 is screwed to the base member 11 at the periphery, so that the flange 17 presses the horizontal surface of the recess 15, and a ring-shaped metal is formed between the flange 17 and the base member 11. Interposed between the first gas supply passages 13 and 16 and the base member 11 and the shower plate 12 by interposing a gasket 18 (omitted for omission of the drawings for hatching). The gap between the gas diffusion spaces 19 is hermetically sealed.

In the base member 11, a second gas supply path 10 that is open to the gas diffusion space 19 is connected to an eccentric position. In addition, the shower plate 12 blows downward from the first gas supply hole 1b so that the gases supplied to the lower gas supply passage 16 for the first gas are opened to the lower surface via the space 1a communicating with each other. The gas which flowed out from the second gas supply passage 10 into the gas diffusion space 19 is ejected from the second gas supply hole 1c downward. The reason why the metal gasket 18 is used in the concave portion 15 of the base member 11 is to generate a plasma in the processing container to perform CVD processing or to perform thermal CVD. Since the temperature is high, and thus the temperature of the portion is, for example, about 300 to 400 ° C., the so-called O-ring, which is a ring-shaped sealing material made of resin, cannot be used. Therefore, the first gas is supplied using the metal gasket 18. The furnace 13 and 16 and the gas diffusion space 19 through which the second gas diffuses are hermetically sealed to prevent mixing of the first gas and the second gas.

By the way, although the fixed position of the shower plate 12 and the base member 11 is in the periphery, the sealing position is separated from the center part, and for this reason, the metal gasket 18, the flange 17, or the like by a heating state or a thermal cycle etc. Skew arises in the center part of the base member 11, etc. As a result, a clearance gap arises in a sealing part, and the gas in the 1st gas supply paths 13 and 16 leaks into the gas diffusion space 19 although it is minute. In order to eliminate the gap, it is effective to fix the screw in the vicinity of the sealing portion. However, when plasma CVD is performed, for example, in a Ti (titanium) film forming process or the like, the lower surface side of the shower plate 12 has flatness to prevent abnormal discharge. It must be on a high surface, and therefore, a screw cannot be provided on the processing space side, and screwing from the upper side can also be employed since the atmosphere and the vacuum atmosphere communicate with each other.

When the first gas leaks into the gas diffusion space 19 in this manner, the following problem occurs. For example, the film formation process of Ti supplies TiCl ₄ (titanium tetrachloride) gas and Ar gas from the first gas supply passages 13 and 16, and H ₂ gas from the second gas supply passage 10. However, after the Ti film is formed on the substrate to be processed in the processing container, the surface portion of the Ti film may be nitrided. In this case, NH ₃ gas is allowed to flow through the second gas supply path 10. At this time, the first process gas, TiCl ₄ If gas is floating in the gas diffusion space 19 due to leakage, NH ₃ NH ₄ Cl (ammonium chloride) is generated by the reaction with the gas and flows into the processing atmosphere to cause particle contamination of the substrate.

In another process, when performing thermal CVD, when the first gas and the second gas contact by leak within the gas shower head, a reaction product is generated, which also causes particle contamination.

The present invention has been made under such circumstances, and an object thereof is to provide a plurality of gas supply holes on a lower surface side and to supply different first and second gases from separate gas supply holes, and to supply a first gas flow path. It is to provide a gas supply device which can reliably perform sealing between the space in which the second gas flows. Another object of the present invention is to provide a film forming apparatus which can reduce particle contamination by using this gas supply device.

The present invention includes a shower plate having a base member provided on an upper portion of a processing container, and a first gas supply path hermetically mounted on a lower side of the base member via a gap forming a gas diffusion space. In the plate, a plurality of gas supply holes are opened at the lower side, and at the base member side, the first gas supplied to the first gas supply path and the second gas supplied to the diffusion space of the gas are different from each other. A gas supply device configured to eject from the gas supply apparatus, comprising: an upper supply path for a first gas provided to extend in the vertical direction of the base member, the lower side of which is open to the lower side of the base member; A second gas supply passage opened in the diffusion space of the gas and a first gas passage inserted into the upper supply passage for the first gas; A sealing member for hermetically sealing between the inner pipe to be used, an outer circumferential surface of the inner pipe and an inner circumferential surface of the upper gas supply path for the first gas, and installed in the shower plate and hermetically connected to a lower side of the inner pipe. And a lower supply passage for the first gas.

In addition, in the present invention, the terms "upper", "lower", and the like that specifically designate the upper and lower sides are used for convenience of description, and even when the gas supply device is installed in the side surface of the processing container, If it is substantially the same (when changing the direction of a processing container will be equipped with the structural requirements of this invention), it will belong to the scope of the present invention.

In this invention, between the lower end part of an inner pipe and the lower supply path for 1st gas on the shower plate side, it seals with a metal gasket, for example. The lower end of the inner pipe may be configured as a flange, and the upper end of the flange and the lower gas supply path for the first gas on the shower plate side may be fixed to each other by screws housed between the base member and the shower plate. Furthermore, the sealing member for hermetically sealing between the outer circumferential surface of the inner pipe and the inner circumferential surface of the first gas supply passage is preferably a sealing member made of resin.

In addition, in the present invention, the lower gas supply path for the first gas on the shower plate side and the inner pipe may be integrated instead of being hermetically connected.

Further, another invention is a gastight processing container, a mounting table installed in the processing container, a mounting table for mounting a substrate, exhaust means for exhausting the gas in the processing container, and any one of claims 1 to 5. And a gas supply device as described above, wherein the first gas and the second gas supplied from the gas supply device are reacted in a processing container, and the reaction product is deposited on a substrate on a mounting table to form a film.

An embodiment in which the gas supply device of the present invention is incorporated in a film forming apparatus for forming a film by plasma CVD will be described. The film forming apparatus includes a mushroom-shaped processing container 2 in which a large-diameter cylindrical portion 2a is arranged at an upper side thereof and a small-diameter cylindrical portion 2b is continuously provided at the lower side thereof. Is configured as a vacuum chamber made of aluminum, for example, and a heating mechanism (not shown) for heating the inner wall thereof is provided. In the processing container 2, the stage 21 which forms the board | substrate mounting table for mounting the semiconductor wafer (hereinafter wafer) W which is a board | substrate horizontally is provided, and this stage 21 is the small diameter part 2b. Is supported via the support member 22 at the bottom of the.

The stage 21 is provided with a heater, not shown, which constitutes the temperature adjusting means of the wafer W, and an electrostatic zipper, not shown, for electrostatically adsorbing the wafer W. As shown in FIG. Furthermore, the stage 21 is provided with three support pins 23 for protruding against the surface of the stage 21 for holding and raising the wafer W, for example. It is connected to the lifting mechanism 25 other than the processing container 2 via the 24. One end side of the exhaust pipe 26 is connected to the bottom of the processing container 2, and a vacuum pump 27 serving as a vacuum exhaust means is connected to the other end side of the exhaust pipe 26. Moreover, the conveyance port 29 which opens and closes by the gate valve 28 is formed in the side wall of the large diameter part 2a of the processing container 2.

Furthermore, the opening part 31 is formed in the ceiling part of the processing container 2, and the gas shower head 4 which is a gas supply apparatus of this invention is provided so that this opening part 31 may be blocked and it may face the stage 21. . Here, the gas shower head 4 and the stage 21 each use the upper electrode and the lower electrode, and the gas shower head 4 is connected to the high frequency power supply 33 via the matching device 32 and at the same time, the lower electrode. The in stage 21 is grounded. In addition, although the wiring diagram is schematically described in FIG. 1, in practice, the stage 21 is electrically connected to the processing container 2 and grounded through a matching box not shown from the top of the processing container 2. High frequency conductive paths surround the processing space.

As shown in FIG. 2, the gas shower head 4 is divided into the base member 5 which is an upper part, and the shower plate 6 which is a lower part. As for the base member 5, the periphery of the circular plate 51 stands up, and the flange 52a is formed in the upper end of the standing periphery 52 of it. The inner periphery of the opening 31 of the processing container 2 is provided with an insulating member 34 for insulating the gas shower head 4 which is the upper electrode and the processing container 2, The flange 52a is fixed to the insulating member 34 by a screw (not shown). In other words, the base member 5 is provided to block the opening 31. Moreover, the heat insulation member 40 is provided in the upper side of the base member 5 as shown in FIG.

The plate 51 of the base member 5 is constituted by assembling a plurality of members, and the detailed structure of the center portion of the base member 5 (in detail, the center portion of the plate 51) is shown in FIG. In the center portion of the base member 5, a circular recess 52 is formed on the lower surface side, and a first gas supply pipe 53 is formed in the recess 52, the lower end of which is open and extends upward. do. As shown in FIG. 1, the upper end of the first gas supply pipe 53 passes through the gas flow path block 100 and the gas supply path 101. For example, TiCl ₄ It is connected to the gas source 102 and the Ar gas source 103.

In addition, the second gas supply pipe 54 constituting the second gas supply path is connected to a position slightly outside the concave portion 52 in the base member 5 so as to extend upward, and the second gas supply pipe At the lower end of 54, a discharge port 56 having a plurality of discharge ports 55 is provided, for example, so that the gas flows out radially into the space 50 (gas diffusion space described later) below the base member 5. Is fitted. As shown in FIG. 1, the upper end of the second gas supply pipe 54 passes through the gas flow path block 100 and the gas supply path 104, for example, H _2. Gas source 105 and NH ₃ It is connected to the gas source 106. In addition, the illustration part 107 enclosed by the dashed line is a group of gas supply equipments, such as a valve and a flow controller provided in each gas supply path.

On the other hand, in the shower plate 6 which is the lower part of the gas shower head 4, the periphery thereof stands up, and a flange 61 is formed at the upper end of the standing periphery thereof, and this flange 61 is formed in the base member 5. The lower surface of the plate 51 is hermetically joined and fixed by screws 51a. Accordingly, the shower plate 6 is airtightly mounted on the lower side of the base member 5 via a gap corresponding to the diffusion space 50 of the second gas (gas discharged from the second gas supply pipe 54). do.

As shown in FIGS. 3 and 4, the introduction port 62 of the first gas protrudes upward in the central portion of the shower plate 6, and the upper end of the shower plate 6 has the above-described recess 52 of the base member 5. It is formed as the flange 63 slightly smaller than the aperture. And the inner pipe 7 which is a tubular body which forms the 1st gas path | pass is joined to the introduction port 62 of this 1st gas. More specifically, a flange 71 is formed at the lower end of the inner pipe 7, and the center portion of the flange 71 is configured as a thick circular end 72. The flange 71 on the inner pipe 7 side and the flange 63 on the first gas introduction port 62 side are fixed by inserting the screw 60 from the upper side and at the circular end on the inner pipe 7 side. A metal gasket 73 is accommodated in the lower surface side of the 72, and the flange 71 (in detail, the lower surface of the circular end 72) and the flange 63 are hermetically sealed through the metal gasket 73. It is. Reference numerals 71a and 63a in FIG. 4 are screw holes.

The inner pipe 7 is inserted into the first gas supply pipe 53 of the base member 5, and a groove 74 (see FIG. 4) is formed over the entire circumference near the upper end of the inner pipe 7. A sealing member 75 made of a resin called an O ring is fitted into the groove 74, and is formed between the inner circumferential surface of the first gas supply pipe 53 and the outer circumferential surface of the inner pipe 7 by the O ring 75. Is hermetically sealed. The distance in the height direction of the portion sealed by the O-ring 75 and the lower surface of the shower plate 6 is, for example, about 130 mm.

In this embodiment, the gas supply pipe 53 on the base member 5 side and the gas introduction port on the shower plate 6 side are respectively the upper gas supply path for the first gas and the lower part for the first gas according to the present invention. Corresponds to the gas supply path.

The shower plate 6 has a second gas supply hole 80 formed in the thickness direction so as to communicate the lower surface side, that is, the processing space side in the processing container 2 with the diffusion space 50, and an introduction port of the first gas ( The space 81 which communicates with the lower end of 62 and surrounds the slender cylindrical portion 82 which forms the upper side portion of the second gas supply hole 80, and the space 81 and the processing space side The 1st gas supply hole 91 perforated by the thickness direction is provided so that it may communicate. More specifically, the shower plate 6 is a plate 8, 9 of the upper and lower two stages, the upper plate 8 is shown in Figure 5 (bottom view of the upper plate 8) along the AA line of Figure 2. As described above, a plurality of slender projections 82 (cylindrical portions described above) are formed in a matrix shape over the entire surface, and in the projections 82 at the upper side of the second gas supply hole 80. The corresponding hole is drilled. In this embodiment, the space between the projections 82 in the shower plate 6 (corresponding to the above space 81) is piped in the shape of "H" at the lower end of the introduction port 62 of the first gas. The gas discharge tube 83 is provided, and the first gas is injected upward from the holes (four in total) provided near the tip of the "H" shaped pipe, dispersed in the space 81 and uniformly disposed in the processing space. It is supplied.

On the other hand, the lower plate 9 has a hole corresponding to the lower side of the second gas supply hole 80 at a position corresponding to the hole of the protrusion 82 of the upper plate 8, and the second gas supply hole ( The first gas supply hole 91 is drilled at a position between the holes 80. That is, the first gas supply hole 91 communicates with the space 81 formed by joining the upper plate 8 and the lower plate 9, and the space 81 and the first gas supply hole 91 communicate with each other. The second gas supply hole 80 is formed in a gastightly isolated state. In other words, the gas shower head 4 is arranged so that the first gas supply hole 91 and the second gas supply hole 80 are open to the lower surface side in a matrix shape, respectively, and the introduction port 62 of the first gas is provided. The first gas discharged from the gas and the second gas introduced into the gas diffusion space 50 are supplied from different gas supply holes.

Next, the operation of the above-described embodiment will be described. First, as shown in FIG. 1, the wafer W which is a board | substrate is carried in into the processing container 2 via the conveyance opening 29 by the conveyance arm which is not shown, and cooperates with the support pin 23. As shown in FIG. It sends and receives on the stage 21 by an action. And TiCl _{4 as} the first gas from the gas sources 102 and 103. A mixed gas of gas and Ar gas is respectively sent to the first gas supply pipe 53 so that these first gases are showered in the gas shower head 4 via the inner pipe 7 and the introduction port 62 of the first gas. It spreads to the space 81 in the plate 6, and is discharged from the first gas supply hole 91 to the processing space in the processing container 2. In addition, H ₂ which is the second gas from the gas supply source 105 The gas is sent to the second gas supply pipe 54 so that the second gas is discharged from the discharge port 56 into the diffusion space 50 and diffused, and is discharged from the second gas supply hole 80 into the processing space.

On the other hand, the inside of the processing container 2 is evacuated by the vacuum pump 27, the pressure control valve (not shown) provided in the exhaust pipe 26 is adjusted to set the pressure in the processing container 2 to the set pressure, and the high frequency power supply unit A high frequency electric power is supplied between the gas shower head 4 serving as the upper electrode and the stage 21 serving as the lower electrode from 33, and plasma treatment of the processing gas, that is, the first gas and the second gas, and TiCl ₄ is performed at H _2. Is reduced to deposit Ti on the wafer W to form a thin film, and HCl, which is a reaction byproduct, is exhausted together with the unreacted gas.

Then, supply of a 1st gas is stopped and H2 which is a _2nd gas is continued. NH ₃ from gas To gas (ammonia), which results in NH ₃ The gas is discharged into the gas diffusion space 50 through the second gas supply pipe 54 and the discharge port 56 and diffused, and is discharged from the second gas supply hole 80 into the processing space. Also at this time, high frequency power is supplied to the processing space, and the surface of the Ti thin film already formed on the wafer W is nitrided by the active species of NH ₃ . After nitriding, supply of high frequency power and NH ₃ Supply of the gas is stopped, and the wafer W is then taken out of the processing container 2 in the reverse operation of the above-mentioned carrying in operation.

According to the above-described embodiment, the first gas introduction port 62 corresponding to the lower gas supply path for the first gas protruding upward from the center of the shower plate 6, which is the lower part of the gas shower head 4, is directed to the upper side. The inner pipe 7 is hermetically connected, the inner pipe 7 is inserted into the first gas supply pipe 53 corresponding to the upper gas supply path for the first gas from the lower side of the base member 5, and the inner pipe Since the upper part of (7) is hermetically sealed between the inner circumferential surface of the first gas supply pipe 53 and the inner pipe 7 by an O-ring 75 which is a sealing member made of a resin material, both are easily and reliably sealed. Can be sealed. And since this sealing site | part is located in the low temperature site | part of about 170 degreeC away from a processing space, there is no possibility that the O-ring 75 may deteriorate, and the defect which the peripheral part deforms by heating or a thermal cycle does not occur, either. Therefore, it is sealed reliably over a long period of time.

In addition, even if a distortion occurs due to thermal stress in the connection portion between the introduction port 62 of the first gas and the inner pipe 7, the fixing portion by the screw 60 is located near the sealing portion, so that a gap occurs. There is no concern, and there is no fear that the first gas will leak into the gas diffusion space 50 from this connection portion. From the above, there is no fear that the first gas supplied into the first gas supply pipe 53 will leak into the gas diffusion space 50 which is the flow-through space of the second gas, and therefore, the nitride film of the Ti film is executed. NH ₃ from the second gas supply pipe 54 to the gas diffusion space 50 for Even if gas flows, since TiCl ₄ does not exist in the space 50, these gases do not react to generate a reaction product (NH ₄ Cl). Therefore, the scattering of solid reaction products in the processing space is reduced, so that particle contamination on the wafer W can be suppressed.

When the introduction port 62 and the inner pipe 7 of the first gas in the center of the shower plate 6 can be separated as in the above-described embodiment, assembling and disassembling operations can be easily performed, maintenance is performed. Although easy, in the present invention, these may be integrated. FIG. 6 shows this embodiment, in which the inner pipe 7 extends from the upper side of the central part of the shower plate 6 so that the lower end side of the inner pipe 7 is formed in the center of the shower plate 6 while the space It communicates with the lower gas supply path 70 for the first gas which communicates with 81. Also in this embodiment, there is no possibility that the 1st gas supplied in the 1st gas supply pipe 53 leaks into the gas diffusion space 50 which is the flow path of the 2nd gas.

The present invention is not limited to film formation of Ti and subsequent nitriding treatment, but is also applicable to a case where silicon nitride film is formed by separately supplying a silane-based gas such as a monosilane gas and ammonia gas into a processing vessel. In this case, when the gas leaks in the gas shower head, the solid NH ₄ Cl is formed therein, and thus the present invention is effective. The film forming apparatus is not limited to the plasma CVD apparatus, but can be applied to a thermal CVD apparatus or the like.

According to the present invention, an upper pipe for a first gas and a second gas supply path are provided in a base member, which is an upper portion of a gas shower head, and an inner pipe communicating with the lower gas supply path for the first gas on the shower plate side. Since it inserts in the upper gas supply path for 1st gas from the lower side of a member, and seals between the inner peripheral surface of the said upper supply path and the outer peripheral surface of an inner pipe, a sealing site can be located in the low temperature part away from a processing space. Therefore, since deformation and deterioration of the sealing member and its peripheral portion can be suppressed, it is possible to reliably seal the gas diffusion region where the first gas supply path and the second gas are diffused for a long time. And since a sealing site | part can be located in a low temperature site | part, a ring-shaped sealing member made of resin can be used as a sealing member, In this case, assembly can be performed easily and a more reliable sealing state can be maintained. In this way, a reliable sealing structure can be achieved, whereby contact between the first gas and the second gas in the gas shower head can be prevented, there is no fear that reaction products of these gases will occur, and the particle generation can be reduced. Contribute.

Claims (6)

A shower plate having a base member provided at an upper portion of the processing container and a first gas supply path hermetically mounted via a gap forming a gas diffusion space at a lower side of the base member, the shower plate having a lower portion; The plurality of gas supply holes are opened at the side, and the first gas supplied to the first gas supply path at the base member side and the second gas supplied to the diffusion space of the gas are ejected from different gas supply holes. In the configured gas supply device, An upper supply path for the first gas provided to extend in the vertical direction of the base member, the lower side of which is open to the lower side of the base member; A second gas supply passage provided in the base member and open to the gas diffusion space; An inner pipe inserted into the upper supply path for the first gas and forming a passage of the first gas; A sealing member for hermetically sealing between the outer circumferential surface of the inner pipe and the inner circumferential surface of the upper supply path for the first gas; A lower supply passage for the first gas, which is provided on the shower plate and is hermetically connected to a lower side of the inner pipe. Gas supply. The method of claim 1, Between the lower end of the inner pipe and the upper supply passage for the first gas on the shower plate side is sealed by a metal gasket. Gas supply. The method according to claim 1 or 2, The lower end of the inner pipe is configured as a flange, and the upper end of the flange and the upper gas supply path for the first gas on the shower plate side is fixed to each other by screws received between the base member and the shower plate. Gas supply. The method according to claim 1 or 2, The sealing member for hermetically sealing between the outer circumferential surface of the inner pipe and the inner circumferential surface of the first gas supply passage is a sealing member made of resin. Gas supply. The method according to claim 1 or 2, The lower supply passage for the first gas and the inner pipe on the shower plate side are integrated instead of hermetically connected. Gas supply. A gas-tight processing container, a mounting table for mounting a substrate, a discharging means for evacuating a gas in the processing container, and a gas supply device according to claim 1 or 2 are provided. The first gas supplied from the supply device and the second gas are reacted in the processing vessel, and the reaction product is deposited on a substrate on the mounting table to form a film. Deposition device.

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