KR20060108447A - Repeller of ion implantation apparatus - Google Patents

Abstract

Provided is a repeller of an ion implantation device. The repeller of the ion implantation apparatus disclosed herein has a cup-shaped repeller plate having a male threaded protrusion protruding from an inner bottom surface thereof, a first female threaded screw threaded to the male threaded thread on one side thereof, and a second female threaded thread formed on the other side thereof. A repeller insulator, a through hole corresponding to the second female threaded mouth at the bottom thereof, and a cup-shaped repeller shield having a diameter smaller than that of the repeller plate, and a second female threaded thread through the through hole. By screwing, the repeller shield and the repeller insulator are composed of a repeller screw that fixes one wall of the arc chamber.

Ion Implantation Equipment, Arc Chamber, Cathodes, Repellers

Description

REPELLER OF ION IMPLANTATION APPARATUS}

1 is a perspective view showing the arc chamber with the cover removed to explain the arc chamber of the conventional ion implantation apparatus.

Figure 2 is an exploded perspective view of the conventional repeller shown in FIG.

3 is a cross-sectional view taken along line II ′ of FIG. 2.

Figure 4 is an exploded perspective view of the repeller according to an embodiment of the present invention.

5 is a cross-sectional view taken along the line II-II 'of FIG. 4.

** Description of the symbols for the main parts of the drawings **

10: source head 100: arc chamber

120: square fence 220: repeller stud

310: repeller plate 312: male threaded ball

320: Repeller insulator 322: first female threaded ball

324: 2nd female thread port 330: Repeller shield

332: through hole 340: repeller screw

The present invention relates to a repeller of an ion implantation apparatus, and more particularly, to a repeller that promotes ionization of impurity gas by increasing the momentum of hot electrons emitted from a cathode.

In general, semiconductor manufacturing processes are organically continuous unit processes such as a diffusion process, a photo process, a metal process, and an ion implantation process. The ion implantation process is a process for forming an operation unit such as a transistor, a diode, or a resistor by injecting ionized dopants into a wafer surface, which is a semiconductor substrate, to change the conductivity and resistance of the wafer surface. Dopant is ionized and then the amount of accelerated energy is adjusted to inject the desired amount of ionized impurities evenly to the desired location and desired depth on the front of the wafer.

Such an ion implantation process has the advantage of being able to control the precise scanning position and the scanning concentration, as well as less side spread of the ion implantation at the scanning position compared to the diffusion process.

The ion implantation apparatus performing the ion implantation process includes an ion generating device which generates ions by causing impurity gas and hot electrons to collide, a mass spectrometer which extracts only ions necessary for the process among the generated ions, and accelerates the extracted ions. A beam line to have energy and an end station to inject high energy ions onto a desired substrate are sequentially connected, and all such operations are performed in a high vacuum environment.

1 is a perspective view illustrating the arc chamber 100 in a state in which the cover 140 is separated to explain the configuration of the source chamber 10 arc chamber 100 of the conventional ion implantation apparatus.

Referring to FIG. 1, the arc chamber 100 protrudes a square fence 120 on one surface of the base plate 110 to provide an arc generating chamber 130 inside the square fence 120. A cover 140 having an arc slit 150 is installed on an open upper surface of the square fence 120. The base plate 110 in which the arc generation chamber 130 is located is provided with a gas inlet hole 190 for supplying impurity gas. In addition, one side wall of the arc generating chamber 130 is provided with a cathode (Cathod: 170) for applying a current to the filament (Filament: 160) to release the hot electrons, the other facing the one side wall is the cathode 170 is installed Repellers 200 are installed on the side walls.

Looking at the reaction in the arc generation chamber 130, the hot electrons emitted from the filament 160 impinges on the cathode 170 due to the potential difference with the cathode 170 to heat the cathode 170. Secondary hot electrons are emitted from the surface of the heated cathode 170, and the emitted secondary hot electrons collide with neutral atoms constituting impurity gas introduced into the arc generating chamber 130 to cation the neutral atoms. It produces an ionized impurity gas.

At this time, the recharger 200 charged with negative charge increases the momentum by repulsing the secondary hot electrons emitted from the cathode 170, thereby increasing the momentum and colliding more with the neutral atoms constituting the impurity gas and the secondary hot electrons. To promote ionization of the impurity gas.

FIG. 2 is an exploded perspective view of the conventional repeller shown in FIG. 1, and FIG. 3 is a sectional view taken along line II ′ of FIG. 2.

2 and 3, the conventional repeller is charged with negative charge and has a cup-shaped repeller plate 210 which retracts the secondary hot electrons to return it, and a smaller diameter than the repeller plate 210. A cup-shaped repeller shield 240 having a shape, the repeller insulator 230 interposed between the repeller plate 210 and the repeller shield 240, the repeller plate 210 and the The repeller stud 220 connecting and fixing the repeller insulator 230 and the repeller shield 240 and the repeller insulator 230 are disposed on one side wall of the square fence 120 of the arc chamber 100. It is composed of a repeller screw 250 for fixing.

However, since the internal threaded portion 212 for screwing with the repeller stud 220 is formed at the inner bottom portion of the repeller plate 210, the thickness of the portion where the female threaded sphere 212 is formed is the bottom portion. Compared with other parts, the thickness of the repeller plate 210 is easily damaged due to the deterioration of the thickness of the process in progress. In addition, the repeller plate 210 formed of tungsten material is easily damaged by etching or corrosion due to frequent collisions with hot electrons and ionized impurities in the process of ionizing the impurity gas. These damages act as a factor to shorten the life of the repeller plate 210 causes a problem that leads to an increase in maintenance costs due to frequent replacement.

In addition, in order to fix the repeller to one wall of the square fence 120 of the arc chamber 100, first, the repeller stud 220 is fastened to the repeller insulator 230, and then the repeller insulator ( There is a need to fasten the repeller plate 210 to the repeller stud 220 fastened to 230 again. Therefore, there is a problem that the assembly and replacement of the repeller is very inconvenient.

The present invention has been made to overcome the disadvantages of the prior art, it is easy to assemble and replace the repeller, as well as simplify the assembly structure of the repeller to suppress the deterioration of the repeller plate of the ion implantation apparatus Providing a feller is a technical challenge.

Repeller of the ion implantation apparatus according to the present invention for achieving the above technical problem, a cup-shaped repeller plate having a male threaded projection protruding on the inner bottom surface, and the first female screw screwed into the male screwed sphere on one side A repeller insulator in which a sphere is formed and a second female threaded sphere is formed on the other side, a through-hole corresponding to the second female threaded sphere is formed in a bottom portion, and a cup-shaped repeller shield having a smaller diameter than the repeller plate; And a repeller screw that penetrates the through hole and is screwed to the second female threaded mouth to fix the repeller shield and the repeller insulator to one side wall of the arc chamber.

In this case, the repeller insulator is preferably formed of an insulating material, the repeller plate is preferably made of graphite.

Hereinafter, an ion implantation apparatus according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

4 is an exploded perspective view of a repeller according to an embodiment of the present invention, and FIG. 5 is a sectional view taken along line II-II 'of FIG. 4. Here, like reference numerals denote like elements throughout the specification.

As shown in Figure 4 and 5, the repeller according to an embodiment of the present invention is largely the repeller plate 310, the repeller insulator 320, the repeller shield 330, and the repeller screw ( 340.

As described above with reference to FIG. 1, the repeller plate 310 increases the momentum by applying a repulsive force to the secondary hot electrons emitted from the cathode, thereby increasing the amount of neutral atoms and secondary hot electrons constituting the impurity gas. It serves to cause collision and promotes ionization of the impurity gas, and has a cup shape as a whole. At this time, the male screw sphere 312 is projected on the inner bottom surface of the cup shape. The male screw sphere 312 is screwed with the first female screw sphere 322 formed on one side of the repeller insulator 320 to be described later.

On the other hand, the repeller plate 310 is preferably formed of a graphite material to withstand the degradation and etching or corrosion caused by frequent collisions with the aforementioned secondary hot electrons and ionized impurity gas.

Since the graphite has a low coefficient of thermal expansion and excellent thermal shock resistance, abrasion resistance, and corrosion resistance, the repeller plate 310 is formed of a graphite material, and thus the secondary hot electrons and the ionized impurity gas generated during the ionization process of the impurity gas are formed. Deterioration and etching or corrosion of the repeller plate 310 due to frequent collisions can be suppressed.

In addition, the graphite is easy to manufacture the repeller plate 310 is easy to machine, and in terms of price is cheaper than tungsten, it is possible to reduce the replacement cost.

On the other hand, the repeller insulator 320 has a cylindrical shape as a whole. One side of the repeller insulator 320 is formed with a first female threaded thread 322 which is screwed to the male screw thread 312 formed in the repeller plate 310, the second female threaded thread 324 is formed on the other side The repeller is formed by screwing through a repeller screw 340 with one side wall of the arc chamber described above with reference to FIG. 1 and a repeller shield 330 to be described later. It is fixed together with the shield 330.

In this case, the repeller insulator 320 is preferably formed of an insulating material. This is to electrically insulate the repeller plate 310 and the arc chamber. The repeller plate 310 may be configured to be negatively charged to increase momentum by repulsing and acting on the secondary hot electrons emitted from the cathode, while the arc chamber of the cover described with reference to FIG. This is because a predetermined portion opposite the arc slit should be configured to have a positive charge so as to facilitate the release of the impurities ionized into the arc slit.

On the other hand, the repeller shield 330 is to protect the interior of the repeller plate 310 from ionized impurities generated during the ionization process of the impurity gas, cup shape having a smaller diameter than the repeller plate 310 Has A through hole 332 corresponding to the second female threaded thread 324 formed in the repeller insulator 320 is formed at the bottom of the repeller shield 330.

Meanwhile, the repeller screw 340 is for fixing the repeller shield 330 and the repeller insulator 320 to one side wall of the square fence of the arc chamber described with reference to FIG. 1, and first, a hole formed in the square fence. After inserting into the through, through the through-hole 332 formed in the repeller shield 330 is screwed with the second female threaded sphere 324 formed in the repeller insulator 320 to the repeller shield 330 and The repeller insulator 320 is fixed to one side wall of the square fence. Next, the installation of the repeller is completed by screwing the male screw thread 312 formed in the repeller plate 310 and the first female threaded thread 322 formed in the repeller insulator 320.

As such, the repeller according to an embodiment of the present invention has a very simple structure that does not require a repeller stud like a conventional repeller, so that the repeller can be easily assembled and replaced. In addition, since the bottom portion of the repeller plate 310 is the same because it does not have a female threading hole for screwing with the repeller studs, it does not have a vulnerable part to deterioration.

In addition, the repeller plate 310 is formed of a graphite material having a low coefficient of thermal expansion and excellent thermal shock resistance, abrasion resistance, and corrosion resistance, thereby preventing frequent collisions with secondary hot electrons and ionized impurity gas generated during ionization of the impurity gas. Deterioration and etching or corrosion of the repeller plate 310 may be suppressed.

As described above, in the detailed description of the present invention has been described with respect to preferred embodiments of the present invention, those skilled in the art to which the present invention pertains various modifications without departing from the scope of the present invention Of course this is possible. Therefore, the scope of the present invention should not be limited to the described embodiments, but should be defined not only by the claims below, but also by the equivalents of the claims.

According to the present invention having the configuration as described above, the assembly and replacement of the repeller is easy by simplifying the assembly structure of the repeller. In addition, by minimizing damage through deterioration and etching or corrosion of the repeller plate, there is an advantage of minimizing supply and demand for consumable parts due to frequent replacement of the repeller plate.

Claims (3)

A cup-shaped repeller plate having a male screw hole protruding from an inner bottom surface thereof; A repeller insulator having a first female threaded thread formed on one side and screwed with the male threaded mouth, and a second female threaded thread formed on the other side; A cup-shaped repeller shield having a through hole corresponding to the second female threaded portion at a bottom thereof and having a diameter smaller than that of the repeller plate; And a repeller screw that fixes the repeller shield and the repeller insulator to one side wall of the arc chamber by screwing the second female threaded thread through the through hole. The method of claim 1, The repeller insulator is a repeller of the ion implanter, characterized in that formed of an insulating material. The method of claim 1, The repeller plate is a repeller of the ion implanter, characterized in that made of graphite.

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