KR20060105669A - Uneveness inspecting apparatus and uneveness inspecting method - Google Patents

Abstract

The nonuniform inspection apparatus 1 includes a stage 2 holding the substrate 9, a light emitting portion 3 that emits linear light toward the upper surface 91 on which the film 92 of the substrate 9 is formed, and a substrate. (9) a light-receiving portion (4) for receiving the reflected light from the light source, a wavelength band switching mechanism (5) arranged between the substrate (9) and the light-receiving portion (4) to switch the wavelength band of light, and a moving mechanism for moving the stage (2) 21), an inspection unit 7 for inspecting film thickness non-uniformity based on the intensity distribution of the received light. In the nonuniformity inspecting apparatus 1, the incident angle θ1 with respect to the upper surface 91 of the light incident on the substrate 9 from the light output part 3 becomes 60 °, so that the range of the film thickness that enables highly accurate nonuniformity detection is possible. In addition, the width of the low sensitivity region, which is the region near the maximum point of the reflectance with respect to the film thickness, can be prevented from increasing. As a result, it is possible to prevent the fluctuation range of the film thickness from being included in the low sensitivity region and to detect minute film thickness nonuniformity with high accuracy.

Non-uniformity Inspection Device, Wavelength Switching Means, Light Projection Unit

Description

Non-uniformity Inspection Device and Non-Uniformity Inspection Method {UNEVENESS INSPECTING APPARATUS AND UNEVENESS INSPECTING METHOD}

1 is a diagram illustrating a configuration of a nonuniformity inspection device according to a first embodiment.

2 is a diagram showing a wavelength band switching mechanism.

3 is an enlarged view showing the vicinity of a selective optical filter.

4 is a diagram showing the relationship between the inclination angle of the optical filter and the shift amount in the transmission wavelength band.

Fig. 5 shows the flow of inspection of film thickness nonuniformity.

6 is a diagram showing the flow of inspection of film thickness nonuniformity.

Fig. 7 is a diagram showing the relationship between the film thickness and the reflectance.

8 is a diagram showing a relationship between a film thickness and a change in reflectance.

9 is a diagram showing the relationship between the film thickness and the reflectance in the nonuniformity inspection device of the comparative example.

Fig. 10 is a diagram showing the configuration of the nonuniformity inspection device according to the second embodiment.

Fig. 11 is a diagram showing the configuration of the nonuniformity inspection device according to the third embodiment.

12 is a diagram showing a relationship between the film thickness and the reflectance.

Fig. 13 is a diagram showing the relationship between the film thickness and the variation in reflectance.

Fig. 14 is a diagram showing the configuration of the nonuniformity inspection device according to the fourth embodiment.

Fig. 15 is a diagram showing the configuration of the nonuniformity inspection device according to the fifth embodiment.

Fig. 16 is a diagram showing the configuration of the nonuniformity inspection device according to the sixth embodiment.

Fig. 17 is a diagram showing the configuration of the nonuniformity inspection device according to the seventh embodiment.

Fig. 18 is a diagram showing the configuration of the nonuniformity inspection device according to the eighth embodiment.

19 is a diagram illustrating a configuration of a nonuniformity inspection device according to a ninth embodiment.

20 is a diagram illustrating a configuration of a nonuniformity inspection device according to a tenth embodiment.

TECHNICAL FIELD This invention relates to the technique of examining the film thickness nonuniformity of the film formed on the board | substrate.

Conventionally, when inspecting a thin film such as a resist film formed on a main surface of a glass substrate or a semiconductor substrate (hereinafter referred to as a "substrate") for a display device, light from a light source is irradiated onto the thin film, and The nonuniformity of a film thickness is examined using the optical interference in reflected light or transmitted light.

In the inspection of such film thickness nonuniformity, when monochromatic light sources such as sodium lamps are used, sufficient sensitivity cannot be obtained depending on the thickness and refractive index of the thin film (that is, interference fringes due to optical interference do not appear clearly). There is this. Therefore, in the visual inspection, uneven detection is surely performed by changing the incident angle of light by tilting the substrate. Moreover, although irradiating the light of a several wavelength with respect to a board | substrate is performed simultaneously, since interference fringes corresponding to each wavelength appear simultaneously, there exists a possibility that a sensitivity may fall as a whole.

Japanese Unexamined Patent Application Publication No. 2002-267416 discloses a surface defect inspection apparatus for inspecting defects on a surface of a subject, wherein one of a plurality of narrow band filters that limit the wavelength band of reflected light from the subject is selected from the thin film on the surface of the subject. A technique for performing inspection at an appropriate wavelength band by inserting on an optical path in accordance with characteristics (material, refractive index, film thickness, reflectance, etc.) is disclosed. Moreover, the technique of changing the angle (namely, the incidence angle of illumination light with respect to a subject) to a subject to irradiate light to a subject according to the characteristic of a thin film is also disclosed.

By the way, in the visual inspection, it is relatively easy to clarify the interference fringe by tilting the substrate, but as in the surface defect inspection apparatus of Japanese Patent Laid-Open No. 2002-267416, the reflected light from the subject is imaged to capture each pixel. As an apparatus for acquiring an image showing the film thickness unevenness by the luminance value of, the angle of the line sensor camera that receives the reflected light needs to be adjusted with high precision according to the incident angle of the illumination light when the angle of the illumination portion with respect to the subject is changed. . For this reason, the structure of the apparatus becomes complicated and the operation at the time of inspection becomes complicated.

In addition, although it is thought that there exists an appropriate angle with respect to the incidence angle of the light in a lighting part with respect to the to-be-tested object, respectively, in Unexamined-Japanese-Patent No. 2002-267416, the specific incidence angle is disclosed at least. Not.

The present invention can be directed to a nonuniformity inspection device that inspects the film thickness nonuniformity of a film formed on a substrate, and aims to accurately detect minute film thickness nonuniformity with high precision. It is the purpose to detect reliably.

The non-uniformity inspection apparatus includes a holding portion for holding a substrate, a light emitting portion for emitting light incident at an incident angle of 50 ° or more and 65 ° or less with respect to a main surface on which a light transmissive film of the substrate is formed, and the main surface of the substrate. And a sensor for receiving light after a reflection in a specific wavelength band and acquiring an intensity distribution of light in the specific wavelength band on the main surface, and wavelength band switching means for switching the specific wavelength band between a plurality of different wavelength bands. According to the present invention, minute film thickness nonuniformity can be detected with high accuracy.

In one preferred embodiment of the present invention, in the nonuniformity inspection apparatus, the light output section emits light including light of the plurality of wavelength bands, and the wavelength band switching means selectively transmits the light of the plurality of wavelength bands, respectively. And an optical filter switching mechanism for switching one optical filter disposed on an optical path from the light output part to the sensor among the plurality of optical filters to another optical filter. Thereby, the wavelength range of the light to receive can be switched easily.

In another preferable embodiment of this invention, a nonuniformity inspection apparatus is a 1st filter tilt mechanism which changes the inclination with respect to the said optical path of a 1st optical filter among the said plurality of optical filters, and a 2nd optical filter among the said some optical filters. A second filter tilt mechanism for changing the inclination of the optical path from the first optical filter separately from the first optical filter, and the holding part relative to the light emitting part and the sensor in a predetermined moving direction along the main surface of the substrate. A light source for emitting light including the light of the plurality of wavelength bands, and light from the light source along the main surface and linearly perpendicular to the movement direction. And an optical system for converting and leading to the main surface, wherein the sensor is provided from the irradiation area on the substrate of the linear light. It is a line sensor which repeatedly acquires the intensity distribution of the light of the said specific wavelength range in synchronization with the movement of the said holding part. Thereby, the transmission wavelength band of an optical filter can be adjusted precisely.

In still another embodiment of the present invention, the non-uniformity inspection device further includes a polarizer which is disposed on the optical path from the light output portion to the sensor and selectively transmits the S-polarized light to the film.

In one aspect of the invention, the non-uniformity inspection device includes a light output for emitting light incident at an incidence angle of 10 ° or more and 40 ° or less with respect to a holding part for holding a substrate and a main surface on which a light-transmissive film of the substrate is formed. And a sensor for receiving the light in the specific wavelength band after reflection on the main surface of the substrate to obtain the intensity distribution of the light in the specific wavelength band on the main surface. Thereby, the film thickness nonuniformity with a large fluctuation range can be detected reliably.

The present invention is also directed to a method for inspecting film thickness nonuniformity of a film formed on a substrate.

The above and other objects, features, aspects, and advantages will be apparent from the following detailed description of the invention made with reference to the accompanying drawings.

Fig. 1 is a diagram showing the configuration of a nonuniformity inspection device 1 according to one embodiment of the present invention. The nonuniformity inspection device 1 is a pattern for forming a pattern formed on one main surface 91 in a glass substrate (hereinafter referred to as a "substrate") 9 that can be used for a display device such as a liquid crystal display device. An apparatus for inspecting the film thickness non-uniformity of the resist film (hereinafter referred to as "film") 92. The film 92 on the substrate 9 is formed by applying a resist liquid on the main surface 91 of the substrate 9.

As shown in FIG. 1, the nonuniformity inspection apparatus 1 has the main surface 91 (hereinafter referred to as the "top surface 91") on which the film 92 is formed (upper side (+ Z) in FIG. 1). From the stage 2 holding the substrate 9 toward the top, the light output portion 3 and the light output portion 3 emitting light toward the upper surface 91 of the substrate 9 held on the stage 2. The light-receiving portion 4 which receives the light emitted from the film 92 on the upper surface 91 of the substrate 9 and disposed between the substrate 9 and the light-receiving portion 4 and receives the light received by the light-receiving portion 4 Wavelength band switching mechanism 5 and the stage 2 for switching the wavelength band, the moving mechanism 21 and the light receiving part 4 which move relatively to the light output part 3, the light receiving part 4, and the wavelength band switching mechanism 5 Inspection section 7 for inspecting the film thickness non-uniformity of film 92 based on the intensity distribution (distribution corresponding to the area of upper surface 91) of the light received at . In addition, in FIG. 1, a part of wavelength band switching mechanism 5 is shown in cross section for the convenience of illustration (same also in other embodiment).

The surface on the (+ Z) side of the stage 2 is preferably black gloss cleared. The moving mechanism 21 has a configuration in which a ball screw (not shown) is connected to the motor 211, and as the motor 211 rotates, the stage 2 moves on the upper surface of the substrate 9 along the guide 212. It moves to the X direction in FIG. 1 along 91. FIG.

The light output unit 3 is a halogen that is a light source that emits white light (that is, light including all light in the visible range including light in a plurality of wavelength bands corresponding to the plurality of optical filters 51 described later). A lamp 31, a columnar quartz rod 32 extending in the Y direction in Fig. 1 perpendicular to the moving side of the stage 2, and a cylindrical lens 33 extending in the Y direction are provided. In the light output part 3, the halogen lamp 31 can be provided in the edge part of the (+ Y) side of the quartz rod 32, and the light which the halogen lamp 31 entered the quartz rod 32, Is converted into linear light extending in the Y direction (that is, light whose cross section of the light beam becomes a long linear in the Y direction) and is emitted from the side surface of the quartz rod 32, and is transferred to the substrate 9 through the cylindrical lens 33. Guided to the upper surface 91. In other words, the quartz rod 32 and the cylindrical lens 33 follow the light from the halogen lamp 31 along the upper surface 91 of the substrate 9 and at the same time perpendicular to the moving direction of the stage 2. The optical system is converted into linear light and guided to the upper surface 91 of the substrate 9.

In Fig. 1, the optical path from the light output part 3 to the substrate 9 is indicated by a dashed-dotted line (the same applies to the optical path from the substrate 9 to the light receiving part 4). The angle of incidence of the light incident on the substrate 9 from the light output part 3 to the upper surface 91 (that is, the angle at which the optical path is in the normal direction of the upper surface 91) is assumed to be 50 ° or more and 65 ° or less. In this embodiment, it is 60 degrees.

A part of light emitted from the light output part 3 is reflected on the surface (hereinafter referred to as "film surface") on the (+ Z) side of the film 92 on the upper surface 91 of the substrate 9. The film 92 is light-transmitting with respect to the light from the light output part 3, and the light which is not reflected on the film-like surface among the light from the light output part 3 is transmitted through the film 92 to form a substrate ( 9 is reflected on the upper surface 91 (ie, the lower surface of the film 92). In the nonuniformity inspection apparatus 1, interference light between light reflected from the upper surface of the film 92 on the substrate 9 and light reflected from the upper surface 91 of the substrate 9 (hereinafter referred to as “reflected light”). Is incident on the light-receiving portion 4 via the wavelength band switching mechanism 5.

The wavelength band switching mechanism 5 holds a plurality of optical filters (for example, an interference filter 51 having a half width of 10 nm) and a plurality of optical filters that selectively transmit light of a plurality of different narrow wavelength bands, respectively. It is provided with the disk-shaped filter wheel 52 and the filter rotation motor 53 which is provided in the center of the filter wheel 52, and rotates the filter wheel 52. As shown in FIG. The filter wheel 52 is arrange | positioned as the normal direction becomes parallel to the optical path from the board | substrate 9 to the light receiving part 4.

2 is a view showing the wavelength band switching mechanism 5 along the side perpendicular to the filter wheel 52 from the substrate 9 side. As shown in Fig. 2, six circular openings 521 are formed in the filter wheel 52 at equal intervals in the circumferential direction, and five of the five openings 521 have five types of different transmission wavelength bands. An optical filter 51 is provided.

In the wavelength band switching mechanism 5 shown in FIG. 1, the filter wheel 52 is rotated by the filter rotation motor 53 controlled by the control part 8, and among the five optical filters 51 (refer FIG. 2), According to the film thickness, refractive index, etc. of the film | membrane 92 used as an inspection object, since it distinguishes from one optical filter 51 (Hereinafter, another optical filter 51), it is called "selective optical filter 51a." Is selected and disposed on the optical path from the substrate 9 to the light receiving portion 4. Thereby, the selective optical filter 51a arrange | positioned on the optical path among the reflected light from the board | substrate 9 (namely, the reflected light of white light containing the light of five transmission wavelength bands corresponding to five optical filters 51). Only light having a specific wavelength band (hereinafter referred to as "selective wavelength band") is transmitted through the selective optical filter 51a and guided to the light receiving portion 4.

And when the filter wheel 52 rotates by the filter rotation motor 53, the selection optical filter 51a arrange | positioned on the optical path from the light output part 3 to the light receiving part 4 among the some optical filters 51 is carried out. Is switched to another optical filter 51, and the wavelength band (i.e., the selected wavelength band) of the light received by the light receiving portion 4 is changed. In this way, the filter rotation motor 53 and the filter wheel 52 serve as an optical filter switching mechanism.

As shown in Fig. 2, each optical filter 51 is provided inside the annular filter rim 54, and passes through the center of the optical filter 5 together with the filter rim 54. It is rotatably supported about (shown by a dashed-dotted line in FIG. 2). The filter rotation shaft 55 has a light output section (in a state where the optical filter 51 is disposed on the optical path from the substrate 9 to the light receiving section 4 (that is, the state called the selective optical filter 51a)). It is provided so as to face the Y side in Fig. 1 which is the direction in which the linear light from 3) extends (that is, the side parallel to the linear light).

3 is a front view showing the vicinity of the selection optical filter 51a of the wavelength band switching mechanism 5, and shows a cross section with respect to the portion outside the selection optical filter 51a and the filter frame 54. As shown in FIG. As shown in FIG. 3, the wavelength band switching mechanism 5 is shown by the dashed-dotted line in FIG. 3 (optical path 90) from the board | substrate 9 of the selection optical filter 51a to the light receiving part 4 (refer FIG. 1). And a filter tilt mechanism 56 for changing the inclination with respect to.

In the wavelength band switching mechanism 5, the inclination of the selection optical filter 51a with respect to the optical path 90 is changed by the filter tilt mechanism 56, so that the selection optical filter 51a with respect to the reflected light on the substrate 9 is changed. The transmission wavelength band (ie, the selective wavelength band) is changed.

The filter tilt mechanism 56 is provided with the micrometer 561 which abuts on the lower end part of the filter edge 54, and the spring 562 which is an elastic body provided in the upper end part of the filter edge 54. As shown in FIG. In the wavelength band switching mechanism 5, the lower end of the filter edge 54 is pushed out by the micrometer 561, so that the selective optical filter 51a is formed around the filter rotation axis 55 together with the filter edge 54. 3, the inclination of the selection optical filter 51a with respect to the optical path 90 is changed. Further, since the micrometer 561 is returned to its original state, the selective optical filter 51a is rotated in the counterclockwise rotation direction by the repulsive force of the spring 562 in the contracted state, whereby the selective optical filter 51a is returned to the state perpendicular to the optical path 90.

When the selection optical filter 51a is inclined with respect to the optical path 90 by the filter tilt mechanism 56, the center wavelength of the transmission wavelength band of the selection optical filter 51a with respect to the reflected light from the substrate 9 is shifted to the short wavelength side. . 4 is a diagram showing a relationship between the inclination angle with respect to the optical path 90 of the selective optical filter 51a and the shift amount toward the short wavelength side of the center wavelength of the transmission wavelength band. In addition, the inclination angle of the selection optical filter 51a sets the state where the selection optical filter 51a in FIG. 3 is perpendicular to the optical path 90 is 0 °.

The plurality of points 301 in FIG. 4 are shift amounts of the center wavelength of the transmission wavelength band measured by tilting the selective optical filter 51a, and the line 302 is an approximation straight line of the measured values of the shift amounts. As shown in Fig. 4, in the wavelength band switching mechanism 5, the selective optical filter 51a is tilted by 1 DEG so that the transmission wavelength band is shifted to the short wavelength side by about 0.5 nm.

In addition, in the wavelength band switching mechanism 5, as shown in FIG. 2, the filter tilt mechanism 56 is provided with respect to each of the five optical filters 51, and, thereby, each optical filter 51 The inclination with respect to the optical path 90 (see Fig. 3) is changed separately from the other optical filters 51.

As shown in Fig. 1, the light receiving portion 4 includes a line sensor 41 and a line sensor 41 in which a plurality of light receiving elements (CCDs), which are linearly arranged in a Y-direction, are arranged in a line direction. A condensing lens 42 is disposed between the line sensor 41 and the selection optical filter 51a of the wavelength band switching mechanism 5 on an optical path leading to the optical path. The condenser lens 42 is a linear irradiation area extending in the Y direction on the upper surface 91 of the substrate 9 emitted from the light exiting part 3 (hereinafter referred to as a "linear irradiation area"). Of the linear light beams reflected by the film 92 (ie, the linear light beams after the reflection on the upper surface 91 of the substrate 9), which have passed through the selection optical filter 51a. Light is condensed toward the line sensor 41. The line sensor 41 receives the light of the selected wavelength band which is collected by the condenser lens 42 and is formed at the same time, and acquires the intensity distribution of the received light (that is, the distribution on the Y side of the output value from each CCD). Output to (7). In the nonuniform inspection apparatus 1, the intensity distribution of the reflected light from the film 92 formed on the upper surface 91 of the substrate 9 is caused by the line sensor 41 during the movement of the substrate 9 and the stage 2. It is acquired repeatedly.

The inspection unit 7 is generated by the image generation unit 71 and the image generation unit 71 that receive the output from the line sensor 41 and generate a two-dimensional image of the upper surface 91 of the substrate 9. A nonuniformity detector 72 is provided for detecting a film thickness nonuniformity of the film 92 from pixel values of each pixel of the two-dimensional image.

Next, the flow of the inspection of the film thickness nonuniformity by the nonuniformity inspection device 1 will be described. 5 and 6 are diagrams showing the flow of inspection by the nonuniform inspection apparatus 1. When the film thickness non-uniformity of the film 92 on the upper surface 91 of the substrate 9 is inspected by the non-uniformity inspection device 1 shown in FIG. 1, first, the material or the film thickness of the film 92 to be inspected, etc. In the state where the selection optical filter 51a having the transmission band suitable for the characteristics is disposed on the optical path, the operator selects the selection optical filter 51a by the filter tilt mechanism 56 of the selection optical filter 51a as necessary. The inclination with respect to the optical path from the substrate 9 of the selection optical filter 51a to the line sensor 41 is changed (or the inclination is changed in advance). By this, the selection optical filter 51a is changed. The center wavelength of the transmitted wavelength band is shifted to the shorter wavelength side, and the selected wavelength band is adjusted so as to be in a more suitable range for detection of film thickness nonuniformity of the film 92 (step S11).

Next, after the board | substrate 9 is hold | maintained on the stage 2 located in the test start position shown by the solid line in FIG. 1, the movement to the (+ X) direction of the board | substrate 9 and the stage 2 is started. (Step S12). Then, the linear light emitted from the light output part 3 and incident on the upper surface 91 of the substrate 9 at an incident angle of 60 ° is irradiated to the linear irradiation area on the upper surface 91 of the substrate 9 (step). S13), the linearly radiated region moves relative to the substrate 9.

The light from the light output part 3 is reflected on the upper surface 91 of the substrate 9 and passes through the selective optical filter 51a of the wavelength band switching mechanism 5, whereby a specific wavelength band (for example, the center wavelength is 550 nm, After only light having a half width of 10 nm) is taken out, it is led to the light receiving portion 4. In the light receiving portion 4, the light of the selected wavelength band after reflection on the upper surface 91 of the substrate 9 is received by the line sensor 41 through the condenser lens 42 (step S14), and the substrate 9 Intensity distribution in the selected wavelength range of the reflected light from the linear irradiation region of the image is acquired (step S15). The output value from each CCD of the line sensor 41 is sent to the image generation part 71 of the inspection part 7.

In the nonuniform inspection apparatus 1, the control unit 8 repeats during the movement of the substrate 9 whether the substrate 9 and the stage 2 have moved to the inspection end position indicated by the dashed-dotted line in FIG. 1. If it is confirmed (step S16) and it does not move to the test | inspection end position, it returns to step S14 and acquires the intensity distribution of the selected wavelength band in reflected light, and the intensity distribution of the selected wavelength band in a linear irradiation area (step S14, S15). This is repeated. In the nonuniform inspection apparatus 1, while the stage 2 is moving toward the (+ X) side, the operations of steps S14 to S16 are repeated so that the intensity distribution of the reflected light from the linearly radiated region on the substrate 9 is repeatedly acquired. With respect to the entirety of the substrate 9, the intensity distribution in the selected wavelength band of the reflected light from the upper surface 91 is obtained.

And when the board | substrate 9 and the stage 2 move to the test | inspection end position (step S16), the movement of the board | substrate 9 and the stage 2 by the moving mechanism 21 will stop, and irradiation of illumination light will also stop. (Step S17). In the image generation unit 71 of the inspection unit 7, the difference in the luminance value due to the variation in the film thickness with respect to the intensity distribution in the selected wavelength band of the reflected light from the upper surface 91 acquired by the light receiving unit 4 is determined. A smoothing image is obtained by smoothing the median filter on a two-dimensional image (for example, the "original image") showing the intensity distribution on the upper surface 91 (for example, an image) to be emphasized to obtain a smoothed image. By dividing the value of the pixel by the value of the corresponding pixel of the smoothed image, thereby eliminating the variation of the luminance value over a wider range than that caused by the film thickness variation). A two-dimensional image (hereinafter referred to as " emphasis image ") of the upper surface 91 expressed as a change in value is generated (step S21).

The generated emphasis image is displayed on a display device such as a display as necessary, and the film thickness nonuniformity is detected by the nonuniformity detection unit 72 of the inspection unit 7 based on the emphasis image (step S22). .

FIG. 7 is a diagram showing the relationship between the film thickness and the reflectance of the film 92 formed on the upper surface 91 of the substrate 9. The line 101 in Fig. 7 represents the reflectance (that is, the reflectance with respect to light having an incident angle of 60 °) under the same conditions as the nonuniformity inspection device 1 according to the present embodiment, and the line 102 shows light emission. The reflectance in the same conditions as the nonuniformity inspection apparatus which concerns on 5th Embodiment mentioned later whose incidence angle with respect to the board | substrate of light at negative is 30 degrees is shown. Lines 101 and 102 represent reflectances for light having a wavelength of 550 nm, and when the wavelength is changed, the relationship between the film thickness and the reflectance also changes.

As shown in FIG. 7, when the film thickness of the film 92 is different, the reflectance of the film 92 is also different, so that the intensity of the reflected light received by the light receiving portion 4 is also different. Therefore, when there is a nonuniformity in the film thickness distribution of the film 92, the two-dimensional image (original image) of the upper surface 91 of the substrate 9 generated by the image generating section 71 of the inspection section 7 And emphasis image) also causes nonuniformity in the pixel value. In the nonuniformity inspection apparatus 1, the degree of variation of the value of each pixel in the emphasis image of the upper surface 91 is inspected by the nonuniformity detection portion 72 of the inspection portion 7, and is compared with the nonuniformity threshold set in advance. When there is an area with a large degree of deviation, the corresponding area on the upper surface 91 is detected as an area in which film thickness nonuniformity exceeds an allowable range.

By the way, the reflectance of the film 92 fluctuates with periodicity with respect to the fluctuation of the film thickness, as shown in FIG. FIG. 8 is a diagram showing variation in reflectance when the film thickness of the film 92 varies only 1 nm. As shown in Fig. 7 and Fig. 8, in the vicinity of the local maximum and the local minimum of the reflectance, the variation in the reflectance with respect to the variation in the film thickness becomes extremely small. For this reason, when the variation in the film thickness is small, the value of the pixel hardly fluctuates in the two-dimensional image (the original image and the emphasis image) generated by the image generation unit 71, and the nonuniformity detection unit 72 The precision of detection of nonuniformity (namely, fluctuation in film thickness) due to this is lowered. Hereinafter, the area | region of the film thickness with a very small ratio of the fluctuation | variation of the reflectance with respect to the film thickness variation is called "low sensitivity area | region."

For example, if the film thickness of the film 92 on the substrate 9 fluctuates in the low-sensitivity area of the line 101 in FIG. 7, such film thickness nonuniformity can be detected with high precision based only on the line 101. It's hard to do Therefore, in the nonuniformity inspection apparatus 1, as described above, after detecting the first film thickness nonuniformity as the selection optical filter 51a (step S23), the control unit 8 As a result, the filter rotation motor 53 of the wavelength band switching mechanism 5 is driven to rotate the filter wheel 52, and another optical filter 51 is disposed on the optical path from the substrate 9 to the light-receiving portion 4, thereby providing a wavelength band. The selection wavelength band in the switching mechanism 5 is changed (step S231). As the selected wavelength band is changed, the low sensitivity region of the film thickness also shifts.

Then, if necessary, or beforehand, the inclination with respect to the optical path of the new selective optical filter 51a is changed by the filter tilt mechanism 56, and the selection wavelength range is adjusted, and the stage 2 is moved by the moving mechanism 21. It returns to the inspection start position, and the movement of the board | substrate 9 and the stage 2 starts again (step S11, S12). In the nonuniform inspection apparatus 1, until the stage 2 reaches the inspection end position, Of the reflected light on the substrate 9 of the light from the light output unit 3, light in a selected wavelength band different from the first non-uniform detection time is received by the light receiving unit 4, and from the linear irradiation region on the substrate 9. After the intensity distribution of the reflected light is repeatedly acquired and sent to the image generation unit 71 of the inspection unit 7, the movement of the substrate 9 and the stage 2 is stopped, and the irradiation of the illumination light is also stopped (steps S13 to 13). S17).

Then, the image generating unit 71 of the inspection unit 7 generates an emphasis image of the upper surface 91 of the substrate 9 (step S21), and the non-uniformity detecting unit 72 makes the film on the upper surface 91. The film thickness nonuniformity of 92 is detected (step S22). When the detection of the second film thickness nonuniformity is completed (step S23), the film thickness nonuniformity of the film 92 formed on the upper surface 91 of the substrate 9 is finally based on the first and second detection results. Is detected, and the detection of the film thickness nonuniformity by the nonuniformity inspection device 1 ends.

In the nonuniformity inspection apparatus 1, the first nonuniformity detection and the second nonuniformity detection are performed by switching the selected wavelength band between a plurality of different wavelength bands by the plurality of optical filters 51 of the wavelength band switching mechanism 5. The low-sensitivity area of the film thickness is made different. As a result, even if a part (or all) of the fluctuation range of the film thickness of the film 92 is included in the low sensitivity area at the time of detecting the first nonuniformity, the low sensitivity area at the time of the second nonuniformity detection, for example. Because of this difference, the film thickness variation can be detected with high precision also in the part included in the low sensitivity region at the time of the first nonuniformity detection.

By the way, in the nonuniformity inspection apparatus 1, the nonuniformity inspection apparatus which concerns on 2nd Embodiment whose incidence angle (theta) 1 of the light which injects into the board | substrate 9 from the light output part 3 is 60 degrees, and an incidence angle is 30 degrees. Since the incidence angle is larger than that in Fig. 7, as shown in Fig. 7, the variation period of the reflectance with respect to the film thickness becomes large. As a result, the area | region where the inclination of the line 101 between adjacent low-sensitivity area | regions is large, ie, the area | region which can detect a highly accurate nonuniformity becomes large. Thus, in the nonuniformity inspection apparatus 1, since the incident angle θ1 of the light from the light output portion 3 to the substrate 9 becomes large, in particular, it is larger than 45 ° which becomes the normal incidence angle in such nonuniformity inspection apparatus, Specifically, the film thickness can be increased by 50 ° or more, so that the range of the film thickness at which high-precision nonuniformity can be detected can be increased.

Fig. 9 is a diagram showing the relationship between the film thickness of the film 92 and the reflectance when the incident angle of light from the light output portion is 70 degrees. As shown in Fig. 9, when the incidence angle is 70 DEG, the width of the low sensitivity region is greatly widened near the maximum point of the reflectance. In the nonuniformity inspection apparatus 1, since the incident angle θ1 of the light to the substrate 9 is 65 degrees or less, the width of the low sensitivity region can be prevented from being widened near the maximum point of the reflectance.

Thus, in the nonuniformity inspection apparatus 1, since the incident angle (theta) 1 of the light from the light output part 3 with respect to the board | substrate 9 becomes 50 degree or more and 65 degrees or less, the film thickness which enables high-precision nonuniformity detection is attained. The range can be increased, and the width of the low-sensitivity area can be prevented from increasing near the maximum point of the reflectance. As a result, it is possible to prevent the fluctuation range of the film thickness from being included in the low sensitivity region and to detect minute film thickness nonuniformity with high accuracy. Moreover, in the nonuniformity inspection apparatus 1, since high-precision nonuniformity detection is implement | achieved in the state in which the incidence angle (theta) 1 with respect to the board | substrate 9 of the light from the light output part 3 is fixed to 60 degrees, it realizes to the board | substrate 9 It is not necessary to provide a mechanism for changing the angle of incidence of light with respect to the light, and the structure of the nonuniformity inspection device 1 can be simplified.

Moreover, the film 92 on the upper surface 91 of the board | substrate 9 is easily formed in many cases by apply | coating a coating liquid, and the nonuniformity inspection apparatus 1 can detect minute film thickness nonuniformity with high precision. As a result, the film 92 is particularly suitable for detecting film thickness nonuniformity (that is, uneven coating) of the film 92 formed by the application of such a coating liquid.

In the nonuniformity inspection device 1, the filter wheel 52 is rotated to switch the selection optical filter 51a on the optical path that extends from the substrate 9 to the light receiving portion 4 to the other optical filter 51, thereby receiving the light receiving portion 4. ), The wavelength band (that is, the selective wavelength band) of the reflected light from the substrate 9 receiving the light can be easily changed to an appropriate wavelength. Furthermore, the line light 41 emits linear light from the light output part 3 and moves the reflected light from the substrate 9 moving in the direction perpendicular to the linear light in synchronization with the movement of the substrate 9 by the line sensor 41. By repeatedly receiving light, the incident angle θ1 of the light to the substrate 9 can be made constant over the entire upper surface 91. Thereby, since it is not necessary to consider the influence on the reflectance by the incident angle in the detection of film thickness nonuniformity, the process of detecting film thickness nonuniformity by the nonuniformity detection part 72 can be simplified.

By the way, in the nonuniformity inspection apparatus 1, by changing the inclination with respect to the optical path from the board | substrate 9 of the selection optical filter 51a to the line sensor 41 by the filter tilt mechanism 56, from the board | substrate 9 The transmission wavelength band (that is, the selection wavelength band) of the selective optical filter 51a with respect to the reflected light can be adjusted with high precision. As a result, the detection accuracy of film thickness nonuniformity can be improved by adjusting the selection wavelength band according to characteristics such as the material of the film 92 or the film thickness. In addition, in a plurality of nonuniformity inspection apparatuses, even when there is a manufacturing error (for example, an error of about 3 nm in the center wavelength) in the transmission wavelength band of the selection optical filter, the selection optics of another apparatus is different from the selection optical filter having the shortest center wavelength. By matching the transmission wavelength band of the filter, the transmission wavelength band of the selective optical filter can be matched with precision, and the individual difference between a plurality of devices can be eliminated, so that stable inspection can be realized.

In the wavelength band switching mechanism 5, since the filter tilt mechanism 56 is provided for each of the plurality of optical filters 51, by changing the inclination with respect to the optical path of each optical filter 51 individually, The transmission wavelength band of the optical filter 51 can be adjusted individually in accordance with the characteristics of the film 92. In the nonuniformity inspection device 1, the film thickness nonuniformity of a plurality of substrates of the same type is usually inspected continuously, but the transmission wavelength bands of the two optical filters 51 used for the inspection are individually adjustable. The change of the inclination of the optical filter 51 may be performed only at the time of inspection of the first substrate 9, and thereafter, the change of the inclination becomes unnecessary. As described above, in the nonuniformity inspection device 1, when continuously inspecting the film thickness nonuniformity of the plurality of substrates 9, the operation related to the adjustment of the transmission wavelength band of the optical filter 51 can be simplified.

In the wavelength band switching mechanism 5, the selective optical filter 51a rotates about the filter rotation axis 55 in the Y direction, which is a direction in which linear light from the light output unit 3 extends, thereby selecting the optical filter. The incidence angle with respect to the selection optical filter 51a of linear light is constant over the full length of linear light incident on 51a. As a result, slight misalignment in the transmission wavelength band due to the slight difference in the incident angle with respect to the selective optical filter 51a is prevented in the central portion and both ends of the linear light, and it is possible to prevent the decrease in detection accuracy of film thickness nonuniformity.

In the nonuniformity inspection apparatus 1, since the line sensor 41 receives the reflected light from the substrate 9 and detects the film thickness nonuniformity, even if the substrate 9 does not have light transmittance, film nonuniformity is prevented. It can be inspected properly. In addition, by inclining the light from the light output part 3 to irradiate the substrate 9, the overlap of the light paths on the incident side and the reflection side by the proximity of the light output part 3 and the light receiving part 4 is avoided. It is possible to prevent the configuration and arrangement of the light output unit 3 and the light receiving unit 4 from becoming complicated.

Next, the nonuniformity inspection apparatus 1a which concerns on 2nd Embodiment of this invention is demonstrated.

10 is a diagram showing the configuration of the nonuniformity inspection device 1a. In the nonuniformity inspection device 1a, instead of the filter tilt mechanism 56 of the nonuniformity inspection device 1 shown in FIG. 3, the filter wheel 52 is centered around the filter rotation shaft 55a as shown in FIG. And a filter tilt mechanism 56a which rotates. The other configuration is the same as in Fig. 1, and the same reference numerals are used in the following description.

As shown in Fig. 10, in the wavelength band switching mechanism 5 of the nonuniformity inspection device 1a, the filter tilt mechanism 56a is provided on the side opposite to the filter wheel 52 of the filter rotation motor 53, and the filter The tilt mechanism 56a is centered on the filter rotation shaft 55a facing the Y direction. By rotating the clockwise rotation, the filter rotation motor 53 and the filter wheel 52 also rotate the clockwise rotation. Thereby, the selection optical filter 51a is inclined together with the other optical filters 51 (that is, five optical filters 51 are integrally inclined), and the substrate 9 of the selection optical filter 51a is inclined. ), The inclination angle of the optical path from the light source to the line sensor 41 is changed so that the selection wavelength band (that is, the transmission wavelength band of the selection optical filter 51a with respect to the reflected light from the substrate 9) is also changed.

The flow of the inspection of the film thickness nonuniformity by the nonuniformity inspection device 1a according to the second embodiment is almost the same as that of the first embodiment, and will be described below with reference to FIGS. 5 and 6. When inspection of the film thickness nonuniformity of the film 92 is performed by the nonuniformity inspection device 1a, first, the inclination of the selection optical filter 51a is automatically changed by the filter tilt mechanism 56a to adjust the selection wavelength range. This is performed (step S11). Subsequently, movement of the board | substrate 9 and the stage 2 starts, and linear white light is radiate | emitted from the light output part 3, and is irradiated to the linear-line irradiation area | region on the board | substrate 9 (step S12, S13).

The light from the light output part 3 is reflected on the upper surface 91 of the substrate 9, and only the light of the selected wavelength band is taken out by passing through the selection optical filter 51a of the wavelength band switching mechanism 5, thereby receiving the light receiving part 4 Is induced. In the light receiving portion 4, the light of the selected wavelength band from the wavelength band switching mechanism 5 is received by the line sensor 41, and the intensity distribution in the selected wavelength band of the reflected light from the linearly radiated area on the substrate 9 is acquired. And the image is sent to the image generating unit 71 of the inspection unit 7 (steps S14, S15).

In the nonuniform inspection apparatus 1a, the intensity distribution of the reflected light from the linear irradiation region on the substrate 9 is repeatedly acquired until the stage 2 reaches the inspection end position (step S16), so as to the upper surface 91. The intensity distribution in the selected wavelength range of the reflected light from the above is obtained (steps S14 to S16). Thereafter, the movement of the substrate 9 and the stage 2 and the irradiation of the illumination light are stopped (step S17), the emphasis image is generated by the image generating unit 71, and the upper surface 91 by the non-uniformity detecting unit 72. The film thickness nonuniformity of the film 92 formed on the () is detected (steps S21 and S22).

When the detection of the first film thickness nonuniformity is completed, the wavelength band switching mechanism 5 switches the selection optical filter 51a to change the selection wavelength band (steps S23 and S231) and returns to step S11 as necessary. After the inclination of the selective optical filter 51a is automatically changed, the second film thickness nonuniformity is detected (steps S11 to S17, S21 to S23). Based on the first and second detection results, The film thickness nonuniformity of the film 92 formed on the upper surface 91 of the board | substrate 9 is finally detected, and the detection of the film thickness nonuniformity by the nonuniformity inspection apparatus 1a is complete | finished.

As described above, in the nonuniformity inspection apparatus 1a, as in the first embodiment, the film thickness nonuniformity can be detected with high accuracy by changing the selected wavelength band and detecting the film thickness nonuniformity twice. In addition, since the incident angle θ1 of the light from the light output unit 3 to the substrate 9 is 50 ° or more and 65 ° or less, the variation in the film thickness is prevented from being included in the low sensitivity region, thereby minimizing the film thickness nonuniformity. It can be detected with high precision.

In the nonuniformity inspection apparatus 1a, by changing the inclination of the selection optical filter 51a with respect to the optical path by the filter tilt mechanism 56a, the substrate 9 of the selection optical filter 51a is changed as in the first embodiment. The transmission wavelength band (i.e., the selective wavelength band) with respect to the reflected light can be precisely adjusted. As a result, by adjusting the selection wavelength band in accordance with the characteristics of the film 92, the detection accuracy of film thickness nonuniformity can be improved, and the selection wavelength band can be matched with high accuracy in a plurality of nonuniformity inspection apparatuses. The nonuniformity inspection device 1a is also particularly suitable for the detection of the film thickness nonuniformity (i.e., application nonuniformity) of the film 92 formed by the application of the coating liquid.

In the wavelength band switching mechanism 5 of the nonuniformity inspection apparatus 1a, since the inclination with respect to the optical path of the some optical filter 51 is changed integrally by the one filter tilt mechanism 56a especially, several optical The mechanism for adjusting the transmission wavelength band with respect to the filter 51 can be simplified. In addition, as in the first embodiment, the selective optical filter 51a rotates about the filter rotation axis 55a in the Y direction, which is the side where the linear light from the light output unit 3 extends, whereby The incident angle with respect to the selection optical filter 51a becomes constant over the full length of linear light, and the fall of the detection precision of film thickness nonuniformity can be prevented.

In the nonuniformity inspection device 1a, as in the first embodiment, since the light reflected from the substrate 9 is received to detect the film thickness nonuniformity, even if the substrate 9 does not have light transmittance, the film thickness nonuniformity Can be inspected appropriately. In addition, by inclining the light from the light output part 3 and irradiating the substrate 9, it is possible to prevent the configuration or arrangement of the light output part 3 and the light receiving part 4 from becoming complicated.

Next, the nonuniform inspection apparatus 1b according to the third embodiment of the present invention will be described. 11 is a diagram showing the configuration of the nonuniformity inspection device 1b. As shown in FIG. 11, the nonuniformity inspecting apparatus 1b is disposed on the optical path from the substrate 9 to the wavelength band switching mechanism 5 in addition to the respective configurations of the nonuniformity inspecting apparatus 1 shown in FIG. The polarizer 6 which selectively transmits S-polarized light among the reflected light from the film | membrane 92 is further provided.

The flow of the inspection of the film thickness nonuniformity by the nonuniformity inspection device 1b is almost the same as in the first embodiment, and will be described below with reference to FIGS. 5 and 6. When the film thickness non-uniformity inspection of the film 92 is performed by the nonuniformity inspection device 1b, first, the tilt of the selection optical filter 51a is necessitated by the filter tilt mechanism 56 (see FIG. 3) as necessary. It is changed and adjustment of the selected wavelength band is performed (step S11). Subsequently, movement of the board | substrate 9 and the stage 2 starts, and linear white light is radiate | emitted from the light output part 3, and is irradiated to the linear-line irradiation area | region on the board | substrate 9 (step S12, S13).

The light from the light output part 3 is reflected on the upper surface 91 of the substrate 9, and only the S-polarized light is taken out by passing through the polarizer 6. By passing through the selective optical filter 51a of the wavelength band switching mechanism 5, only the light of the selected wavelength band is taken out of the S-polarized light and then guided to the light receiving portion 4. In the light receiving portion 4, the S-polarized light of the selected wavelength band from the wavelength band switching mechanism 5 is received by the line sensor 41, and is reflected in the selected wavelength band of the S-polarized light among the reflected light from the linearly radiated region on the substrate 9. The intensity distribution in the part is acquired and sent to the image generating part 71 of the inspection part 7 (step S14, S15).

In the nonuniform inspection device 1b, since the intensity distribution of the reflected light from the linear irradiation area on the substrate 9 is repeatedly acquired until the stage 2 reaches the inspection end position (step S16), from the upper surface 91 Of the reflected light, the intensity distribution in the selected wavelength band of the S-polarized light is acquired (steps S14 to S16). Subsequently, the movement of the substrate 9 and the stage 2 and irradiation of the illumination light are stopped (step S17), An emphasis image is generated by the image generating section 71, and a film thickness non-uniformity of the film 92 formed on the upper surface 91 is detected by the non-uniformity detecting section 72 (steps S21 and S22).

When the detection of the first film thickness nonuniformity is completed, the wavelength band switching mechanism 5 switches the selection optical filter 51a to change the selection wavelength band (steps S23 and S231) and returns to step S11 to select as necessary. After the inclination of the optical filter 51a is changed, the second film thickness nonuniformity is detected (steps S11 to S17 and S21 to S23). Then, based on the first and second detection results, the film thickness nonuniformity of the film 92 formed on the upper surface 91 of the substrate 9 is finally detected, and the film thickness nonuniformity by the nonuniformity inspection device 1b is determined. Detection ends.

FIG. 12 is a diagram showing the relationship between the film thickness and the reflectance of the film 92 formed on the upper surface 91 of the substrate 9. The line 121 in FIG. 12 shows the reflectance (namely, the reflectance with respect to S-polarized light) under the same conditions as the nonuniformity inspection apparatus 1b which concerns on this embodiment. In addition, the line 122 has a reflectance under the same conditions as the device (that is, the nonuniformity inspecting apparatus 1 according to the first embodiment) in which the polarizer 6 is omitted from the nonuniformity inspecting apparatus 1b. , Reflectance for light that is not polarized (hereinafter referred to as "polarized light"), and the line 123 selectively replaces only P-polarized light instead of the polarizer 6 of the nonuniformity inspection device 1b. The reflectance (namely, reflectance with respect to P-polarized light) in the same conditions as the apparatus provided with the other polarizer which transmits is shown. Lines 121 to 123 represent reflectances for light having a wavelength of 550 nm.

FIG. 13 is a diagram showing a change in reflectance when the film thickness of the film 92 varies only 1 nm. Lines 201 to 203 in FIG. 13 correspond to lines 121 to 123 in FIG. 12, and show variations in reflectance with respect to S-polarized light, unpolarized light, and P-polarized light, respectively.

As shown in Fig. 13, since the variation in reflectance with respect to the S-polarized light is larger than the variation in reflectance with respect to unpolarized light or P-polarized light, in the nonuniform inspection apparatus 1b, the light receiving portion 4 is provided by the polarizer 6. By checking the film thickness nonuniformity based on the intensity distribution of the S-polarized light by using the light received in S as the polarized light, the variation in the film thickness can be obtained with high sensitivity as the variation in the value of the pixel in the emphasis image. In this manner, in the nonuniformity inspection device 1b, the film thickness nonuniformity can be detected more accurately by improving the sensitivity to the film thickness nonuniformity.

In the nonuniformity inspection device 1b, since the polarizer 6 is disposed between the substrate 9 and the line sensor 41 (that is, on the optical path on the light receiving side), the light to the polarizer 6 The influence of heat from the exit section 3 can be prevented. Moreover, since the polarizer 6 is arrange | positioned between the board | substrate 9 and the wavelength band switching mechanism 5, the freedom degree of arrangement | positioning of the polarizer 6 becomes high, and it can prevent that the structure of an apparatus becomes complicated.

Next, the nonuniform inspection apparatus 1c according to the fourth embodiment of the present invention will be described. 14 is a diagram showing the configuration of the nonuniformity inspection device 1c. As shown in FIG. 14, in the nonuniformity inspection apparatus 1c, the polarizer 6 which selectively transmits S polarized light is carried out on the optical path between the condenser lens 42 of the light-receiving part 4, and the lie sensor 41. As shown in FIG. Is placed. Other configurations are the same as those in Fig. 11, and the same reference numerals are used in the following description. In addition, the flow of the inspection of the film thickness nonuniformity by the nonuniformity inspection apparatus 1c is the same as that of 3rd Embodiment.

In the nonuniformity inspection device 1c, the light from the light output part 3 is reflected on the upper surface 91 of the substrate 9, and passes through the selection optical filter 51a of the wavelength band switching mechanism 5, thereby selecting the wavelength range. Only light is taken out and guided to the light receiving portion 4. In the light receiving portion 4, light of a selected wavelength band from the wavelength band switching mechanism 5 is collected by the condensing lens 42 and led to the polarizer 6, so that only S-polarized light is taken out by passing through the polarizer 6, and the line The light is received while forming an image on the sensor 41.

In the nonuniformity inspection device 1c, as in the third embodiment, the film thickness nonuniformity is inspected based on the intensity distribution of the S-polarized light, whereby the film thickness nonuniformity of the film 92 can be detected more accurately. In addition, since the polarizer 6 is disposed between the substrate 9 and the line sensor 41 (that is, on the optical path on the light receiving side), the influence of the heat from the light output part 3 on the polarizer 6 I can prevent it. In the nonuniformity inspection apparatus 1c, since the polarizer 6 is especially arrange | positioned between the condensing lens 42 and the line sensor 41, the polarizer 6 is carried out to the linear light condensed by the condensing lens 42. You can do it with a corresponding size. Therefore, compared to the case where the polarizer 6 is disposed in front of the condenser lens 42 (before the magnetism) (for example, on the optical path from the light output part 3 to the condenser lens 42), the polarizer 6 is It can be miniaturized.

Next, the nonuniform inspection device 1d according to the fifth embodiment of the present invention will be described. Fig. 15 is a diagram showing the configuration of the nonuniformity inspection device 1d. As shown in FIG. 15, in the nonuniformity inspection apparatus 1d, the polarizer 6 which selectively transmits the S-polarized light is between the cylindrical lens 33 of the light output portion 3 and the substrate 9. Is disposed on the optical path of the. Other configurations are the same as those in Fig. 11, and the same reference numerals are used in the following description. Moreover, the flow of the inspection of the film thickness nonuniformity by the nonuniformity inspection apparatus 1d is the same as that of 3rd Embodiment.

In the nonuniformity inspection device 1d, only the S-polarized light is taken out and guided to the substrate 9 by passing the light from the light output part 3 through the polarizer 6, and reflected from the upper surface 91 of the substrate 9. Since the S-polarized light is transmitted through the selection optical filter 51a of the wavelength band switching mechanism 5, only the light of the selected wavelength band is taken out and guided to the light receiving portion 4. In the light receiving portion 4, the light in the selected wavelength band from the wavelength band switching mechanism 5 is collected by the condenser lens 42 and imaged on the line sensor 41 and received.

In the nonuniformity inspection device 1d, as in the third embodiment, the film thickness nonuniformity is inspected based on the intensity distribution of the S-polarized light, whereby the film thickness nonuniformity of the film 92 can be detected with higher accuracy. In particular, the substrate 9 on which the film 92 having a relatively rough surface (for example, the film 92 whose ratio of the scattered light included in the light 14 reflected from the substrate 9 to the specularly reflected light is 1% or more) is formed. In the case of inspection of the film thickness non-uniformity, the polarizer 6 is disposed between the light output part 3 and the substrate 9 (that is, the optical furnace on the outgoing side). Compared with the case where the substrate 9 is disposed between the line sensor 41 (that is, the optical hearth on the light receiving side), the film thickness nonuniformity can be detected more accurately.

Next, the nonuniform inspection device 1e according to the sixth embodiment of the present invention will be described.

Fig. 16 is a diagram showing the configuration of the nonuniformity inspection device 1e. In the nonuniformity inspection device 1e, the incidence angle θ2 of the light from the light output portion 3 to the substrate 9 is 10 degrees or more and 40 degrees or less, unlike the incidence angle θ1 of the nonuniformity inspection device 1 shown in FIG. 30 degrees) in this embodiment. Other configurations are the same as those in Fig. 1, and the same reference numerals are used in the following description.

As shown in FIG. 16, the nonuniformity inspection apparatus 1e has the light transmissivity of the stage 2 holding the substrate 9 and the substrate 9 held on the stage 2 as in the first embodiment. The light output unit 3 which emits light toward the upper surface 91 on which the film 92 is formed, transmits only the light of the selected wavelength band among the reflected light from the substrate 9, The light-receiving part 4 and the stage 2 which receive the light which permeate | transmitted the wavelength band switching mechanism 5 and the wavelength band switching mechanism 5 to switch between, and acquire the distribution on the upper surface of the intensity of the light of a selected wavelength band are moved. The inspection mechanism 7 which checks the film thickness nonuniformity of the film | membrane 92 based on the intensity distribution of the light acquired by the light receiving part 4, and the control part 8 which controls these structures is provided.

As in the first embodiment, the wavelength band switching mechanism 5 includes a plurality of optical filters 51 (five in this embodiment as well, see Fig. 2) for selectively transmitting light of a plurality of different narrow wavelength bands respectively, The disk-shaped filter wheel 52 holding five optical filters 51 and the filter rotation motor 53 which rotates the filter wheel 52 are provided. In the wavelength band switching mechanism 5, the filter wheel 52 is rotated by the filter rotation motor 53, so that it is disposed on the optical path from the light output part 3 to the light receiving part 4 among the plurality of optical filters 51. The selected optical filter 51a is switched to another optical filter 51.

The wavelength band switching mechanism 5 is further provided with the filter tilt mechanism 56 (refer FIG. 3) which changes the inclination with respect to the optical path from the board | substrate 9 of the selection optical filter 51a to the light receiving part 4. As shown in FIG. In the wavelength band switching mechanism 5, as shown in Fig. 2, a filter tilt mechanism 56 is provided for each of the five optical filters 51, whereby the optical path of each optical filter 51 is provided. The inclination with respect to the optical filter 51 is changed separately.

Like the first embodiment, the light output unit 3 also has a halogen lamp 31 and a halogen lamp 31 which are light sources that emit white light including light of a plurality of wavelength bands corresponding to the plurality of optical filters 51. A quartz rod 32 for converting light into linear light and a linear lens 33 for directing linear light from the quartz rod 32 to the substrate 9. The light receiving part 4 also has a condenser lens 42 provided between a line sensor 41 and a line sensor 41 in which a plurality of CCDs are arranged in a straight line, and a selection optical filter 51a of the wavelength band switching mechanism 5. It is provided.

Next, the flow of inspection of film thickness nonuniformity by the nonuniformity inspection device 1e will be described. The flow of inspection by the nonuniform inspection apparatus 1e is the same as in the first embodiment, and will be described below with reference to FIGS. 5 and 6. When the film thickness nonuniformity of the film 92 on the upper surface 91 of the substrate 9 is inspected by the nonuniformity inspection device 1e, first, the filter tilt mechanism 56 inclines the selection optical filter 51a. Is changed as necessary to adjust the selected wavelength band (step S11), and the movement of the stage 2 starts from the inspection start position indicated by the solid line in FIG. 16 (step S12).

Subsequently, linear light incident on the upper surface 91 of the substrate 9 at an incident angle of 30 ° is irradiated to the irradiation area on the upper surface 91, and the reflected light from the substrate 9 is reflected on the selective optical filter 51a. By this, only the light of the selected wavelength band is received by the line sensor 41, and the intensity distribution in the selected wavelength band of the reflected light from the irradiation area on the substrate 9 is acquired (steps S13 to S15).

In the nonuniform inspection device 1e, the intensity distribution of the reflected light from the irradiation area on the substrate 9 is repeatedly acquired in synchronization with the movement of the stage 2, and the stage 2 is terminated by the dotted line in FIG. When the position is reached, the movement of the stage 2 and the irradiation of the illumination light are stopped (steps S16 and S17). Then, an emphasis image of the upper surface 91 is generated and a film thickness nonuniformity on the upper surface 91 is detected (steps S21 and S22).

When the detection of the first film thickness nonuniformity is completed, the selection wavelength band is changed by switching the selection optical filter 51a in the wavelength band switching mechanism 5 (steps S23 and S231), and returns to step S11 to select as necessary. After the inclination of the optical filter 51a is changed, the second film thickness nonuniformity is detected (steps S11 to S17, S21 to S23). Then, the substrate 9 is based on the first and second detection results. The film thickness nonuniformity of the film 92 formed on the upper surface 91 of the main surface of the () is finally detected, and the detection of the film thickness nonuniformity by the nonuniformity inspection device 1e is terminated.

As described above, in the nonuniformity inspection device 1e, the incident angle θ2 of the light incident on the substrate 9 from the light output unit 3 is 30 °, and as shown in FIG. 7, the incident angle θ1 is 60 °. Compared to the nonuniformity inspection device 1 according to the first embodiment, the width of the vicinity of the maximum point of the reflectance with respect to the film thickness is small (that is, the difference in the film thickness from the maximum point until the inclination of the line 102 becomes large). Small), the width of the low sensitivity area in the vicinity of the maximum point becomes small. For this reason, when detecting the film thickness nonuniformity with a comparatively large fluctuation range of film thickness, it is prevented that the whole fluctuation range of film thickness is contained in a low sensitivity area | region. In other words, at least a part of the variation range of the film thickness is included as a region capable of non-uniform detection at high sensitivity between adjacent low-sensitivity regions. In this manner, in the nonuniformity inspection device 1e, the incident angle θ2 of the light from the light output portion 3 to the substrate 9 is small, and therefore, in particular, in such nonuniformity inspection device, it is smaller than 45 ° called the normal incidence angle. More specifically, since it is 40 degrees or less, it is possible to prevent the entire variation range of the film thickness from being included in the low sensitivity region in detecting the film thickness nonuniformity having a relatively large film thickness variation.

In addition, in the nonuniformity inspection apparatus 1e, since the incident angle θ2 of the light to the substrate 9 is 10 ° or more, the light path on the incident side and the reflection side due to the proximity between the light output part 3 and the light receiving part 4 overlaps. By avoiding this, it is possible to prevent the configuration or arrangement of the light output unit 3, the light receiving unit 4, and the wavelength band switching mechanism 5 from being complicated.

In this manner, in the nonuniformity inspection device 1e, the incident angle θ2 of the light from the light output portion 3 to the substrate 9 is set to 10 ° or more and 40 ° or less, thereby preventing the device configuration from being complicated. When detecting a film thickness nonuniformity with a relatively large film thickness variation, it is possible to reliably detect the film thickness nonuniformity by preventing the entire variation range of the film thickness from being included in the low sensitivity region.

Further, in the nonuniformity inspection device 1e, the selective wavelength band is switched between a plurality of different wavelength bands by the plurality of optical filters 51 of the wavelength band switching mechanism 5, thereby reducing the film thickness at the time of nonuniformity detection. Can be changed appropriately, and film thickness nonuniformity with a relatively large film thickness variation can be detected more reliably. The nonuniformity inspection device 1e is also particularly suitable for the detection of the film thickness nonuniformity (that is, the application nonuniformity) of the film 92 formed by the application of the coating liquid, similarly to the first embodiment.

In the nonuniformity inspection device 1e, as in the first embodiment, the substrate receiving light at the light receiving portion 4 by rotating the filter wheel 52 to switch the selection optical filter 51a to the other optical filter 51. The wavelength band (that is, the selected wavelength band) of the reflected light from (9) can be easily changed. Further, by receiving the linear light from the light output unit 3 in synchronization with the movement of the substrate 9 by the line sensor 41, the incident angle θ2 of the light to the substrate 9 is made constant throughout the upper surface 91. Since it is possible to do this, the processing for detecting film thickness nonuniformity by the nonuniformity detector 72 can be simplified.

In the wavelength band switching mechanism 5, similarly to the first embodiment, the substrate 9 of the selective optical filter 51a is changed by changing the inclination of the selective optical filter 51a with respect to the optical path by the filter tilt mechanism 56. The transmission wavelength band (i.e., the selective wavelength band) with respect to the reflected light from can be adjusted precisely. As a result, by adjusting the selection wavelength band in accordance with the characteristics of the film 92, the detection accuracy of film thickness nonuniformity can be improved, and the selection wavelength band can be matched with high accuracy in a plurality of nonuniformity inspection apparatuses.

Further, in the wavelength band switching mechanism 5, the selection optical filter 51a rotates about the filter rotation axis 55 in the Y direction, which is the side where the linear light from the light output section 3 extends, thereby making the selection optical. The incidence angle with respect to the selection optical filter 51a of linear light becomes constant over the full length of linear light incident on the filter 51a. As a result, slight deviation of the transmission wavelength band due to the slight difference in the incident angle with respect to the selective optical filter 51a is prevented at the central portion and both ends of the linear light, and the degradation of detection accuracy of film thickness nonuniformity can be prevented.

In the case of the nonuniformity inspection device 1e, in most cases, since the nonuniformity can be detected with only one filter with high accuracy, the wavelength band switching mechanism 5 may be shifted with one fixed filter, and the step of FIG. S23 and S231 may be omitted.

Next, the nonuniform inspection apparatus 1f according to the seventh embodiment of the present invention will be described.

Fig. 17 is a diagram showing the configuration of the nonuniformity inspection device 1f. In the nonuniformity inspection device 1f, the filter wheel 52 is moved to the filter rotation shaft 55a as shown in FIG. 17, instead of the filter tilt mechanism 56 (see FIG. 3) of the nonuniformity inspection device 1e shown in FIG. The filter tilt mechanism 56a which rotates around () is provided. Other configurations are the same as those in Fig. 16, and the same reference numerals are used in the following description. The structure of the filter tilt mechanism 56a and the flow of the inspection of the film thickness nonuniformity by the nonuniformity inspection device 1f are the same as in the second embodiment.

In the nonuniform inspection device 1f, as in the sixth embodiment, the incidence angle θ2 of the light from the light output portion 3 to the substrate 9 is 10 ° or more and 40 ° or less, thereby complicating the device configuration. In addition, when detecting the film thickness nonuniformity with a relatively large film thickness variation, it is possible to reliably detect the film thickness nonuniformity by preventing the entire range of the film thickness variation from being included in the low sensitivity region.

In the nonuniformity inspection device 1f, similarly to the second embodiment, the transmission tilt band for the reflected light from the substrate 9 of the selection optical filter 51a by the filter tilt mechanism 56a (that is, the selection wavelength band). Can be adjusted with high precision. As a result, by adjusting the selection wavelength band in accordance with the characteristics of the film 92, the detection accuracy of film thickness nonuniformity can be improved, and the selection wavelength band can be matched with high accuracy in a plurality of nonuniformity inspection apparatuses. Moreover, since the inclination with respect to the optical path of the some optical filter 51 is changed integrally by one filter tilt mechanism 56a, the mechanism which adjusts the transmission wavelength range with respect to the some optical filter 51 is simplified. You can do it.

Next, the nonuniformity inspection apparatus 1g which concerns on 8th Embodiment of this invention is demonstrated. 18 is a diagram showing the configuration of the nonuniformity inspection device 1g. As shown in FIG. 18, the nonuniformity inspecting apparatus 1g is disposed on the optical path from the substrate 9 to the wavelength band switching mechanism 5 in addition to the respective configurations of the nonuniformity inspecting apparatus 1e shown in FIG. The polarizer 6 which selectively transmits S-polarized light among the reflected light from the film | membrane 92 is further provided. Other configurations are the same as those in Fig. 16, and the same reference numerals are used in the following description.

In the nonuniformity inspecting apparatus 1g, similarly to the third embodiment, the film thickness nonuniformity is inspected based on the intensity distribution of the S-polarized light as the S-polarized light using the light received by the polarizer 6 as the S-polarized light. Film thickness nonuniformity can be detected more accurately. In addition, since the polarizer 6 is disposed between the substrate 9 and the line sensor 41 (that is, on the optical path on the light receiving side), the influence of the heat from the light output part 3 on the polarizer 6 I can prevent it. Since the polarizer 6 is disposed between the substrate 9 and the wavelength band switching mechanism 5, the degree of freedom of arrangement of the polarizer 6 is increased, and thus, the configuration of the device can be prevented from being complicated.

Next, the nonuniformity inspection device 1h according to the ninth embodiment of the present invention will be described. Fig. 19 is a diagram showing the configuration of the nonuniformity inspection device 1h. As shown in FIG. 19, in the nonuniformity inspection apparatus 1h, the polarizer 6 which selectively transmits S polarized light is carried out on the optical path between the condenser lens 42 of the light-receiving part 4, and the line sensor 41. As shown in FIG. Is placed. The other structure is the same as FIG. 18, and attaches | subjects the same code | symbol in the following description.

In the nonuniformity inspection device 1h, similarly to the eighth embodiment, the film thickness nonuniformity can be detected more accurately with respect to the film thickness nonuniformity based on the intensity distribution of the S-polarized light. In addition, since the polarizer 6 is disposed between the substrate 9 and the line sensor 41 (that is, on the optical path on the light receiving side), the influence of the heat from the light output part 3 on the polarizer 6 I can prevent it. In the nonuniformity inspection apparatus 1h, since the polarizer 6 is especially arrange | positioned between the condensing lens 42 and the line sensor 41, like the 4th Embodiment, the polarizer 6 can be miniaturized. .

Next, the nonuniformity inspection device 1j according to the tenth embodiment of the present invention will be described.

20 is a diagram showing the configuration of the nonuniformity inspection device 1j. As shown in FIG. 20, in the nonuniformity inspection apparatus 1j, the polarizer 6 which selectively transmits S polarized light is between the cylindrical lens 33 of the light output part 3 and the board | substrate 9 Is disposed on the optical path of the. Other configurations are the same as those in Fig. 18, and the same reference numerals are used in the following description.

In the nonuniformity inspection device 1j, similarly to the eighth embodiment, the film thickness nonuniformity can be detected more accurately with respect to the film thickness nonuniformity based on the intensity distribution of the S-polarized light. In particular, the film of the substrate 9 on which the film 92 having a relatively rough surface (for example, the film 92 whose ratio of the reflected light included in the light reflected by the substrate 9 to the specularly reflected light is 1% or more) is formed. In the case of inspection of thickness nonuniformity, like the fifth embodiment, the polarizer 6 is disposed between the light output part 3 and the substrate 9 (on the optical path on the emission side) by placing the polarizer 6. ), The film thickness nonuniformity can be detected more accurately than the case where it is disposed between the substrate 9 and the line sensor 41 (that is, on the optical path on the light receiving side).

As mentioned above, although embodiment of this invention was described, this invention is not limited to the said embodiment, A various change is possible.

For example, the stage 2 is good if it moves relatively with respect to the light output part 3, the light receiving part 4, and the wavelength band switching mechanism 5, and the stage 2 is fixed, and the light output part 3 and the light receiving part (4) and the wavelength band switching mechanism 5 may be moved in a state where they are fixed to each other.

In the light output unit 3, a fiber array in which a plurality of optical fibers are arranged in a straight line instead of the quartz rod 32 is provided, and the light from the halogen lamp 31 is converted into linear light by passing through the fiber array. good. Instead of the halogen lamp 31 and the quartz rod 32, a plurality of light emitting diodes arranged in a straight line may be provided as a light source for emitting linear light.

In the non-uniformity inspection apparatus, when the light exiting from the halogen lamp 31 contains light in a wavelength band that has an undesirable effect on the film 92 formed on the substrate 9, it does not transmit light in the wavelength band. Filter or the like is provided on the optical path from the halogen lamp 31 to the substrate 9. In addition, when the film 92 on the upper surface 91 of the substrate 9 is transparent to infrared rays, a light source that emits infrared rays in place of the halogen lamp 31 that emits white light is provided to the light emitting portion 3. It may be installed.

From the viewpoint of simplifying detection of film thickness nonuniformity by making the incident angle of light to the substrate 9 constant throughout the upper surface 91, the light is moved by the line sensor 41 relatively moving relative to the substrate 9. Although it is preferable to receive the reflected light of the linear light from the output part 3, when the imaging time of the board | substrate 9 needs to be shortened, a 2D CCD sensor is provided in the light receiving part 4 instead of the line sensor 41. FIG. You may be.

The wavelength band switching mechanism 5 does not necessarily need to be disposed on the optical path from the substrate 9 to the light receiving portion 4, but may be disposed on the optical path from the light output portion 3 to the substrate 9, for example. .

The wavelength band switching by the wavelength band switching mechanism 5 is not limited to switching of the plurality of optical filters 51, and a plurality of light sources for emitting light of a plurality of different wavelength bands may be used as the light output unit 3. And a plurality of light sources are controlled by the wavelength band switching mechanism 5, so that the wavelength band of the light emitted from the light output part 3 may be switched.

In the nonuniformity inspection apparatus according to the above embodiment, the film thickness nonuniformity of the film 92 is inspected by the nonuniformity detection portion 72 by checking the degree of variation of the pixel value of each pixel in the two-dimensional image of the upper surface 91. Although detected, film thickness nonuniformity may be detected by the operator visually comparing the two-dimensional image of the upper surface 91 displayed on a display or the like with the reference image.

The filter tilt mechanism may have various configurations other than the above-described configuration. For example, in the filter tilt mechanism 56 according to the first, third to sixth, and the eighth to tenth embodiments, each optical filter ( A stepping motor is connected to an end of the filter rotating shaft 55 of 51, and the stepping motor is rotated by the control of the control section 8, so that the optical filter 51 is rotated so that the inclination to the optical path may be automatically changed. . In addition, the rotation direction of the optical filter 51 by a filter tilt mechanism may be counterclockwise rotation in FIG. 3, for example.

In the nonuniform inspection apparatus according to the third to the fifth and the eighth to tenth embodiments, the polarizer 6 is the line sensor from the light output unit 3 only from the viewpoint of receiving the S-polarized light from the line sensor 41. It may be arrange | positioned on the optical path leading to 41, for example, may be arrange | positioned between the selection optical filter 51a and the condensing lens 42. FIG.

In the non-uniformity inspection apparatus according to the first to fifth embodiments, the second light emitting portion and the substrate of light from the second light emitting portion emit light having an incident angle to the substrate 9 of 10 ° to 40 °. A second light receiving unit for receiving the reflected light in 9) may be further provided, so that high precision detection of minute film thickness nonuniformity and reliable detection of film thickness nonuniformity with large film thickness variation may be realized by one apparatus.

The nonuniformity inspection apparatus according to the above embodiment may be used for the detection of the film thickness nonuniformity of an insulating film or a conductive film formed on a film other than a resist film, for example, the substrate 9, and these films are a method other than application of a coating liquid. For example, it may be formed by vapor deposition, chemical vapor deposition (CVD), sputtering, or the like. Moreover, the nonuniformity inspection apparatus may be used for the inspection of the film thickness nonuniformity of the film formed on another substrate, such as a semiconductor substrate.

While the invention has been described and described in detail, the description thereof is intended to be illustrative and not restrictive. Accordingly, it is understood that many modifications and embodiments are possible without departing from the scope of the present invention.

In the nonuniformity inspecting apparatus 1, the incident angle θ1 with respect to the upper surface 91 of the light incident on the substrate 9 from the light output part 3 becomes 60 °, so that the range of the film thickness that enables highly accurate nonuniformity detection is possible. In addition, the width of the low sensitivity region, which is the region near the maximum point of the reflectance with respect to the film thickness, can be prevented from being widened. Film thickness nonuniformity can be detected with high precision.

Claims (32)

In the nonuniformity inspection device for inspecting the film thickness nonuniformity of the film formed on the substrate, A holding part for holding a substrate, A light emitting part for emitting light incident from an incident angle of 50 ° or more and 65 ° or less with respect to a main surface on which a light transmissive film of the substrate is formed; A sensor that receives light of a specific wavelength band after reflection on the main surface of the substrate to obtain an intensity distribution of light of the specific wavelength band on the main surface; And a wavelength band switching means for switching the specific wavelength band between a plurality of different wavelength bands. The method of claim 1, The light output unit emits light including light of the plurality of wavelength bands, The wavelength band switching means, A plurality of optical filters each selectively transmitting the light of the plurality of wavelength bands; Non-uniform inspection, characterized in that the optical filter switching mechanism for changing the specific wavelength band by switching one optical filter disposed on the optical path from the light output unit to the sensor among the plurality of optical filters to another optical filter Device. The method of claim 2, A first filter tilt mechanism for changing the inclination of the first optical filter with respect to the optical path of the plurality of optical filters; A second filter tilt mechanism for changing an inclination of the second optical filter with respect to the optical path of the plurality of optical filters separately from the first optical filter; And a movement mechanism for moving the holding portion relative to the light emitting portion and the sensor toward a predetermined movement along the main surface of the substrate, The light output unit, A light source for emitting light including light of the plurality of wavelength bands; An optical system for converting light from the light source into linear light along the main surface and at the same time as the moving light, and directing the light from the light source to the main surface; And the sensor is a line sensor which repeatedly acquires the intensity distribution of the light in the specific wavelength band from the irradiation area on the substrate of the linear light in synchronization with the movement of the holding unit. The method of claim 2, A filter tilt mechanism for integrally changing the inclination of the plurality of optical filters with respect to the optical path; And a movement mechanism for moving the holding portion relative to the light emitting portion and the sensor toward a predetermined movement along the main surface of the substrate, The light output unit, A light source for emitting light including light of the plurality of wavelength bands; An optical system that converts light from the light source along the main surface and into linear light perpendicular to the moving side to lead to the main surface, And the sensor is a line sensor which repeatedly acquires the intensity distribution of the light in the specific wavelength band from the irradiation area on the substrate of the linear light in synchronization with the movement of the holding unit. The method of claim 1, And a polarizer disposed on the optical path from the light exit portion to the sensor and at the same time selectively transmitting S polarized light to the film. The method of claim 5, And the polarizer is arranged between the substrate and the sensor. The method of claim 6, And a condensing lens disposed on an optical path from the substrate to the sensor and condensing light of the specific wavelength band toward the sensor, And the polarizer is disposed between the condenser lens and the sensor. The method of claim 5, The non-uniform inspection device, characterized in that the polarizer is disposed between the light output portion and the substrate. The method of claim 8, And a condensing lens arranged on an optical path from the substrate to the sensor and condensing light of the specific wavelength band toward the sensor. The method of claim 1, And a movement mechanism for moving the holding portion relative to the light emitting portion and the sensor toward a predetermined movement along the main surface of the substrate, The light output unit, Light source, An optical system for converting light from the light source into linear linear light along the main surface and vertically directed toward the moving side, and leading to the main surface, And the sensor is a line sensor which repeatedly acquires the intensity distribution of the light in the specific wavelength band from the irradiation area on the substrate of the linear light in synchronization with the movement of the holding unit. The method of claim 10, An optical filter disposed on an optical path from the light output part to the sensor and transmitting light of the specific wavelength band; And a filter tilt mechanism for changing the inclination of the optical filter with respect to the optical path. The method of claim 11, And the filter tilt mechanism rotates the optical filter about an axis directed toward a side parallel to the linear light. The method of claim 1, And the film on the substrate is formed by applying a coating liquid onto the main surface. In the non-uniformity inspection device for inspecting the film thickness non-uniformity of the film formed on the substrate, A holding part for holding a substrate, A light emitting part for emitting light incident from an incident angle of 10 ° or more and 40 ° or less with respect to a main surface on which the light transmissive film of the substrate is formed; And a sensor for receiving light of a specific wavelength band after reflection on the main surface of the substrate to obtain an intensity distribution of light of the specific wavelength band from the main surface. The method of claim 14, A wavelength band switching means for switching the specific wavelength band between a plurality of different wavelength bands, The light output unit emits light including light of the plurality of wavelength bands, The wavelength band switching means, A plurality of optical filters that selectively transmit light of the plurality of wavelength bands, respectively; And an optical filter switching mechanism for switching one optical filter disposed on an optical path from the light output part to the sensor among the plurality of optical filters to another optical filter. The method of claim 15, A first filter tilt mechanism for changing the inclination of the first optical filter with respect to the optical path of the plurality of optical filters; A second filter tilt mechanism for changing an inclination of the second optical filter with respect to the optical path of the plurality of optical filters separately from the first optical filter; And a movement mechanism for moving the holding portion relative to the light emitting portion and the sensor toward a predetermined movement along the main surface of the substrate, The light output unit, A light source for emitting light including light of the plurality of wavelength bands; An optical system that converts light from the light source along the main surface and into linear light perpendicular to the moving side to lead to the main surface, And the sensor is a line sensor which repeatedly acquires the intensity distribution of the light in the specific wavelength band from the irradiation area on the substrate of the linear light in synchronization with the movement of the holding unit. The method of claim 15, A filter tilt mechanism for integrally changing the inclination of the plurality of optical filters with respect to the optical path; And a movement mechanism for moving the holding portion relative to the light emitting portion and the sensor toward a predetermined movement along the main surface of the substrate, The light output unit, A light source for emitting light including light of the plurality of wavelength bands; An optical system for converting light from the light source into linear linear light along the main surface and vertically directed toward the moving side, and leading to the main surface, And the sensor is a line sensor which repeatedly acquires the intensity distribution of the light of the specific wavelength band from the irradiation area on the substrate of the linear light in synchronization with the movement of the holding unit. The method of claim 14, And a polarizer disposed on the optical path from the light output portion to the sensor and at the same time selectively transmitting polarized light for the film. The method of claim 18, And the polarizer is arranged between the substrate and the sensor. The method of claim 19, And a condensing lens disposed on an optical path from the substrate to the sensor and condensing light of the specific wavelength band toward the sensor, And the polarizer is disposed between the condenser lens and the sensor. The method of claim 18, The non-uniform inspection device, characterized in that the polarizer is disposed between the light output portion and the substrate. The method of claim 21, And a condensing lens disposed on an optical path from the substrate to the sensor and condensing light of the specific wavelength band toward the sensor. The method of claim 14, And a movement mechanism for moving the holding portion relative to the light emitting portion and the sensor toward a predetermined movement along the main surface of the substrate, The light output unit, Light source, An optical system for converting light from the light source into linear light along the main surface and vertically directed toward the movement, and leading to the main surface, And the sensor is a line sensor which repeatedly acquires the intensity distribution of the light in the specific wavelength band from the irradiation area on the substrate of the linear light in synchronization with the movement of the holding unit. The method of claim 23, wherein An optical filter disposed on an optical path from the light output part to the sensor and transmitting light of the specific wavelength band; And a filter tilt mechanism for changing the inclination of the optical filter with respect to the optical path. The method of claim 24, And the filter tilt mechanism rotates the optical filter about an axis directed toward a side parallel to the linear light. The method of claim 14, And the film on the substrate is formed by applying a coating liquid onto the main surface. In the nonuniformity inspection method for inspecting the film thickness nonuniformity of a film formed on a substrate, a) a step of emitting light incident at an incident angle of 50 ° or more and 65 ° or less with respect to the main surface on which the light-transmissive film of the substrate is formed; b) receiving light of a specific wavelength band after reflection on the main surface of the substrate to obtain an intensity distribution of light of the specific wavelength band on the main surface; and c) a step of repeating the steps a) and b) by changing the specific wavelength band. The method of claim 27, The nonuniformity inspection method, characterized in that the light in the specific wavelength band received in the step b) passes through a polarizer that selectively transmits S-polarized light to the film before or after reflection on the main surface. The method of claim 27, A step of changing the inclination of the optical filter with respect to the optical path by inclining the optical filter disposed on the optical path from the light output part to the sensor while passing through the substrate and transmitting the light of the specific wavelength band before the step a). Further provided, In the step a), in the light emitting portion moving relative to the substrate toward the movement along the main surface, linear light extending along the main surface and extending in a predetermined direction perpendicular to the movement is emitted toward the film. , In the step b), the sensor, which moves relatively with the light emitting portion with respect to the substrate, receives light of the specific wavelength band after being reflected from the film and extends in the predetermined direction on the main surface. A nonuniformity inspection method characterized by repeatedly acquiring an intensity distribution of light from an irradiation region of (의). In the nonuniformity inspection method for inspecting the film thickness nonuniformity of a film formed on a substrate, a) emitting light incident from an incident angle of 10 ° to 40 ° with respect to a main surface on which a light-transmitting film of the substrate is formed; and b) a step of receiving light of a particular wavelength band after reflection on the main surface of the substrate to obtain an intensity distribution of light of the specific wavelength band on the main surface. The method of claim 30, The nonuniform inspection method characterized in that the light in the specific wavelength band received in the step b) passes through a polarizer selectively transmitting S-polarized light to the film before or after reflection on the main surface. The method of claim 30, A step of changing the inclination of the optical filter with respect to the optical path by inclining the optical filter disposed on the optical path from the light output part to the sensor while passing through the substrate and transmitting the light of the specific wavelength band before the step a). Further provided, In the step a), in the light emitting portion moving relative to the substrate toward the movement along the main surface, linear light extending along the main surface and extending in a predetermined direction perpendicular to the movement is emitted toward the film. , In the step b), the sensor, which moves relatively with the light emitting portion with respect to the substrate, receives light of the specific wavelength band after being reflected from the film and extends in the predetermined direction on the main surface. A nonuniformity inspection method, characterized in that it repeatedly acquires the intensity distribution of light from the irradiation area of.

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