KR20060079993A - Apparatus for surface treatment utilizing plasma source ion implantation - Google Patents

Abstract

Disclosed is a surface treatment apparatus by plasma ion implantation. According to the present invention, a plasma discharge space is formed between a vacuum chamber and a main support roller formed of a metal material and grounded to ground to support a processing material introduced into the vacuum chamber therein. An electrode plate having at least one gas injection through hole formed to surround the main support roller at a predetermined interval so as to be connected to the gas injection through hole to supply a discharge gas to the discharge space, and a high voltage pulse to the electrode plate Including a high voltage pulse applying device,

A plasma treatment of the discharge gas is induced in the discharge space to provide a surface treatment apparatus by plasma ion implantation in which cations of the plasma are injected into the surface of the target material.

Description

Surface treatment apparatus by plasma ion implantation {Apparatus for surface treatment utilizing plasma source ion implantation}

1 is a schematic cross-sectional view of a surface treatment apparatus by plasma ion implantation according to a first embodiment of the present invention.

FIG. 2 is a perspective view of the electrode plate of FIG. 1. FIG.

3 is another embodiment of the electrode plate of FIG. 1.

4 is a schematic cross-sectional view of a surface treatment apparatus by plasma ion implantation according to a second embodiment of the present invention.

5 is a perspective view of the electrode plate of FIG. 4.

6 is a bottom view of the electrode plate of FIG. 5.

<Description of Symbols for Major Parts of Drawings>

5: to-be-processed material 10: vacuum chamber

12: first passage 14: second passage

20: Gas supply device 30: Main support roller

31: 1st auxiliary support roller 32: 2nd auxiliary support roller

35: discharge space 40: electrode plate

42: gas injection through hole 45: gas nozzle

60: high voltage pulse applying device 70a, 70b: partition wall

The present invention relates to a surface treatment apparatus by plasma ion implantation, and more particularly, to a surface treatment apparatus by plasma ion implantation with improved ion implantation efficiency.

Conventional sheets, plates, injection moldings, etc. are compression molded or expensive molded polymer compound base materials by mixing high molecular weight resin resins (resin), which are all imported to add conductivity, to the polymer compound base material for convenience of transportation. Conductivity is imparted by applying a conductive polymer to the. Polyanilin, one of the conductive polymer compounds, is opaque and cannot be applied to a product requiring transparency, and EVA (Ethylene-Vinyl Acetate), which is a transparent conductive polymer compound, is very expensive and is entirely imported from overseas. In addition, a film provided with conductivity by applying a conductive polymer has a problem in that the conductive film is peeled off due to a decrease in the adhesion between the film and the conductive film, and the surface thereof is chemically modified by a chemical reaction of the coating material. In response to this problem, a technique related to surface treatment of a target material by plasma ion implantation has recently been developed.

In general, however, it is difficult to form a high density plasma discharge in the vacuum chamber in the plasma ion implantation process, and power consumption for forming the plasma discharge is high. In addition, a phenomenon occurs in which electrons present in the plasma come into contact with the ground electrode or the vacuum chamber in a ground state, and thus a large amount of electrons are consumed. Therefore, in the conventional plasma ion implantation apparatus, an apparatus for supplying electrons auxiliary to supplement the consumed electrons to maintain plasma discharge, that is, an auxiliary plasma generator, is required, and thus, the size of the vacuum chamber and the connection to the vacuum chamber The capacity of the vacuum pump can be increased, and thus the manufacturing cost of the plasma ion implantation device can be increased.

The technical problem to be achieved by the present invention is to improve the above-mentioned problems of the prior art, to provide a surface treatment apparatus by plasma ion implantation improved ion implantation efficiency.

According to the invention,

Vacuum chamber;

A main support roller formed of a metallic material and grounded to ground to support the processing target material introduced into the vacuum chamber therein;

An electrode plate spaced apart from the main support roller by a predetermined interval so as to surround the main support roller to form at least one gas injection through-hole;

A gas supply device connected to the gas injection through hole to supply a discharge gas to the discharge space; And

Including a high voltage pulse applying device for applying a high voltage pulse to the electrode plate, including,

A plasma treatment of the discharge gas is induced in the discharge space to provide a surface treatment apparatus by plasma ion implantation in which cations of the plasma are injected into the surface of the target material.

First and second passages through which the processing material is input and discharged are provided in the vacuum chamber, respectively.

Preferably, a gas nozzle for gas injection is further installed in the gas injection through hole, and the gas nozzle is connected to the gas supply device. In addition, barrier ribs of an insulating material for confining the discharge gas to the discharge space may be further provided at both ends of the electrode plate.

The vacuum chamber may be separately grounded separately from the main support roller.

Preferably, at least one auxiliary support roller may be further installed on one side of the main support roller, and the main support roller and the auxiliary support roller are provided with rotation means for controlling the rotation speed, respectively. can do.

Hereinafter, a preferred embodiment of the surface treatment apparatus by plasma ion implantation according to the present invention with reference to the accompanying drawings will be described in detail.

1 is a schematic cross-sectional view of a surface treatment apparatus by plasma ion implantation according to a first embodiment of the present invention.

1, the surface treatment apparatus by the plasma ion implantation according to the first embodiment of the present invention is a vacuum chamber 10, the gas supply device 20, the main support roller 30, the auxiliary support roller 32a, 32b), an electrode plate 40 surrounding the main support roller 30 and a high voltage pulse applying device 60. Hereinafter, each component will be described.

The main support roller 30 supports the material to be injected into the vacuum chamber 10 therein. The main support roller 30 is made of metal and is grounded to ground. The first and second auxiliary support rollers 32a and 32b installed at one side of the main support roller 30 assist the main support roller 30 to support the workpiece 5. Preferably, the main support roller 30 and the auxiliary support rollers (32a, 32b) may be provided with a rotating means, respectively, the rotation speed is controlled.

The electrode plate 40 is spaced a predetermined interval to surround the main support roller 30, to form a discharge space 35 between the main support roller 30. The electrode plate 40 is made of metal. At least one gas injection through hole 42 is formed in the electrode plate 40, and the gas injection through hole 42 is connected to the gas supply device 20.

The gas supply device 20 is connected to the gas injection through-hole 42 to be ionized in the discharge space 35, for example argon (Ar), oxygen (O ₂ ) or nitrogen (N ₂ ). Supply gas such as In addition, the high voltage pulse applying device 60 applies a high voltage pulse to the electrode plate 40.

The first passage 12 and the second passage 14 through which the processing material 5 is introduced and discharged are provided in the vacuum chamber 10, respectively. Preferably, the vacuum chamber 10 includes the main support roller ( Separately grounded separately from 30). In the vacuum chamber 10, a vacuum of about 10 ⁻² Torr or less is maintained.

In the surface treatment apparatus according to the plasma ion implantation having the above configuration, the processing target material 5 introduced into the vacuum chamber 10 through the first passage 12 is the main support roller 30 and the auxiliary material. The support rollers 32a and 32b are positioned between the electrode plate 40 and the main support roller 30. Discharge gas is supplied to the discharge space 35 between the main support roller 30 and the electrode plate 40 from the gas supply device connected to the gas injection through hole 42 of the electrode plate 40, When a high voltage pulse is applied to the electrode plate 40, the plasma discharge of the discharge gas is started between the grounded main support roller 30 and the electrode plate 40, the cation of the plasma is treated material 5 Is injected into the surface. The ion implanted material 5 is discharged to the outside of the vacuum chamber 10 through the second passage 14.

In general, in the plasma ion implantation process, electrons present in the plasma are brought into contact with the ground electrode or the vacuum chamber in the ground state and are consumed, thereby consuming a large amount of electrons. Therefore, in the conventional plasma ion implantation apparatus, an apparatus for supplying electrons auxiliary, that is, an auxiliary plasma generating apparatus, is required to supplement electrons consumed to maintain plasma discharge. This is because plasma discharge is difficult to be maintained without such an auxiliary plasma generator.

However, according to the present invention, since the plasma discharge is maintained only in a limited space between the electrode plate and the main support roller, the electrons existing in the plasma are prevented from coming into contact with the ground electrode or the vacuum chamber in the ground state. For this reason, it is not necessary to provide an auxiliary plasma generating apparatus which was required in the conventional plasma ion implantation apparatus in the surface treatment apparatus by plasma ion implantation according to the present invention. Therefore, according to the present invention, since the size of the vacuum chamber and the capacity of the vacuum pump connected to the vacuum chamber can be reduced, not only the size of the surface treatment apparatus by plasma ion implantation is reduced, but also the surface treatment by the ion implantation. The manufacturing cost of the device is also reduced.

In addition, according to the present invention, plasma discharge is started in a narrow space between the electrode plate and the main support roller. In particular, since the plasma discharge is formed only in a limited space in the vacuum chamber, high density plasma can be obtained with small power consumption. Therefore, when the high density plasma is used, the efficiency of plasma ion implantation can be increased on the surface of the material to be injected into the vacuum chamber, for example, a polymer polymer film or a metal plate, and the process time required for the ion implantation. Can also be reduced.

2 is a perspective view of the electrode plate of FIG. 1, and FIG. 3 is another embodiment of the electrode plate of FIG. 1.

2 and 3, at least one gas injection through hole 42 connected to the gas supply device 20 is formed in the electrode plate 40. A gas nozzle 45 for gas injection may be further installed in the gas injection through hole 42, in which case the gas nozzle 45 is connected to the gas supply device 20.

4 is a schematic cross-sectional view of a surface treatment apparatus by plasma ion implantation according to a second embodiment of the present invention. 5 is a perspective view of the electrode plate of FIG. 4, and FIG. 6 is a bottom view of the electrode plate of FIG. 5. Descriptions on the same components as those described in the first embodiment of FIG. 1 will be omitted, and the same reference numerals will be used for the same members.

4 to 6, in comparison with the first embodiment of FIG. 1, in the second embodiment of the present invention, both ends of the electrode plate 40 are disposed to confine the discharge gas to the discharge space 35. The difference is that the partition walls 70a and 70b are further provided. The partitions 70a and 70b are formed of an insulating material. As such, by installing the partition walls 70a and 70b at both ends of the electrode plate 40, plasma generation and maintenance efficiency can be improved.

According to the present invention, plasma discharge is started in a narrow space between the electrode plate and the main support roller. In particular, since the plasma discharge is formed only in a limited space in the vacuum chamber, high density plasma can be obtained with small power consumption. Therefore, when the high density plasma is used, the efficiency of plasma ion implantation can be increased on the surface of the material to be injected into the vacuum chamber, for example, a polymer polymer film or a metal plate, and the process time required for the ion implantation. Can also be reduced.

In addition, since the plasma discharge is maintained only in a limited space between the electrode plate and the main support roller, electrons present in the plasma are prevented from being consumed by contacting the ground electrode or the vacuum chamber in the ground state. For this reason, in the surface treatment apparatus by plasma ion implantation according to the present invention, it is not necessary to provide an auxiliary plasma generator, which was necessary for auxiliary supply of electrons to plasma in the conventional surface treatment apparatus by ion implantation. Therefore, according to the present invention, since the size of the vacuum chamber and the capacity of the vacuum pump connected to the vacuum chamber can be reduced, not only the size of the surface treatment apparatus by plasma ion implantation is reduced, but also the surface treatment by the ion implantation. The manufacturing cost of the device is also reduced.

While some exemplary embodiments have been described and illustrated in the accompanying drawings in order to facilitate understanding of the present invention, it should be understood that these embodiments merely illustrate the broad invention and do not limit it, and the invention is illustrated and described. It is to be understood that the invention is not limited to structured arrangements and arrangements, as various other modifications may occur to those skilled in the art.

Claims (7)

Vacuum chamber; A main support roller formed of a metallic material and grounded to ground to support the processing target material introduced into the vacuum chamber therein; An electrode plate spaced apart from the main support roller by a predetermined interval so as to surround the main support roller to form at least one gas injection through-hole; A gas supply device connected to the gas injection through hole to supply a discharge gas to the discharge space; And Including a high voltage pulse applying device for applying a high voltage pulse to the electrode plate, including, Plasma discharge of the discharge gas is induced in the discharge space, the surface treatment apparatus by plasma ion implantation, characterized in that the cations of the plasma is injected into the surface of the target material. The method of claim 1, A gas nozzle for gas injection is further installed in the gas injection through hole, and the gas nozzle is connected to the gas supply device. The method of claim 1, And a partition wall of an insulating material for confining the discharge gas to the discharge space is provided at both ends of the electrode plate. The method of claim 1, And a first passage and a second passage through which the target material is introduced and discharged into the vacuum chamber, respectively. The method of claim 1, And the vacuum chamber is grounded separately from the main support roller. The method of claim 1, Surface treatment apparatus according to the plasma ion implantation, characterized in that at least one auxiliary support roller is further provided on one side of the main support roller for supporting the target material. The method according to claim 1 or 6, The main support roller and the auxiliary support roller is a surface treatment apparatus by plasma ion injection, characterized in that each having a rotation means for controlling the rotation speed.

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