KR20060077296A - Method for manufacturing projection in liquid crystal display device and method for manufacturing with using the same - Google Patents

Abstract

The present invention is formed to have a protrusion structure of a laminated structure of a semiconductor layer and a source / drain metal layer to prevent a touch failure, the source / drain metal layer of the side that is first loaded during the wet etching of the source / drain metal layer of the protrusion more etched The present invention relates to a projection manufacturing method of a liquid crystal display device having a cell gap stability of the entire liquid crystal panel and to a manufacturing method of a liquid crystal display device using the same, by compensating for designing the portion in consideration of the above-mentioned. Preparing a substrate having a loading direction in a sea direction, depositing a semiconductor layer material layer and a source / drain material layer on the substrate in sequence, applying a photoresist film on the source / drain material layer, Semi-transmissive designed on the photosensitive film, the side that the substrate is first loaded around the light blocking portion and the light blocking portion Matching a pattern mask having a transmissive portion to a portion and the remaining region; and exposing and developing the photosensitive film by using the pattern mask to form a portion corresponding to the light blocking portion of the pattern mask to a first thickness, and a transflective portion Forming a photoresist pattern having a second thickness (<first thickness) at a portion corresponding to the first step; and first etching the source / drain material layer and the semiconductor layer material layer by the same width using the photoresist pattern And removing the photoresist pattern by a second thickness, and secondly etching the source / drain material layer using the photoresist pattern to form a source / drain metal layer in the center of the semiconductor layer material layer. Characterized in that made.

Protrusion, Compensation Design, 4 Mask, 5 Mask, Cell Gap Uniformity, Column Spacer

Description

Method for manufacturing projection in liquid crystal display device and method for manufacturing with using the same}

1 is an exploded perspective view of a general liquid crystal display device

2 is a process flowchart showing a manufacturing process of the liquid crystal display autonomy using the liquid crystal dropping method;

3 is a cross-sectional view of a structure including a column spacer of a conventional liquid crystal display device.

4A and 4B are a plan view and a cross-sectional view of a site where touch stain occurs

5 is a schematic view showing a protrusion structure

6A and 6B are plan views showing protrusions to be designed

7A and 7B are a plan view and a cross-sectional view after protrusion formation

8 is a process chart showing a method of forming a source / drain metal layer of a protrusion;

9 is a cross-sectional view showing a completed protrusion and a column spacer corresponding thereto;

10 is a graph showing the cell gap tendency for each region of the structure having protrusions;

11A and 11B are cross-sectional views illustrating projection designs and the source / drain metal layers after etching used in the method of manufacturing the liquid crystal display of the present invention.

12A to 12D illustrate process steps showing the process of forming the protrusions in the four mask process.

13A to 13D are process sectional views showing the process of forming the protrusions in the five mask process.

Figures 14a and 14b is a plan view and a cross-sectional view of the projections completed by the projection forming method of the present invention

15 is a plan view of a liquid crystal display device formed by the method of manufacturing a liquid crystal display device of the present invention.

FIG. 16 is a structural cross-sectional view taken along lines II ′ and II ′ of FIG. 15.

* Description of symbols on the main parts of the drawings *

100: first substrate 101: gate line

101a: gate electrode 102: data line

102a: source electrode 102b: drain electrode

103: pixel electrode 104: semiconductor layer

105: gate insulating film 106: protective film

107a: common electrode 107: common line

120: second substrate 121: black matrix layer

122: color filter layer 123: overcoat layer

130: protrusion 131: semiconductor layer pattern

132: design value of the source / drain metal layer

132a: actual pattern of the source / drain metal layer                 

141: first column spacer 142: second column spacer

The present invention relates to a liquid crystal display device. In particular, the liquid crystal panel is formed to have a protrusion structure of a stacked structure of a semiconductor layer and a source / drain metal layer in order to prevent touch failure, and to compensate for the etching characteristics when forming the protrusion structure. The manufacturing method of the liquid crystal display device which has the whole cell gap stability is related.

As the information society develops, the demand for display devices is increasing in various forms, and in recent years, liquid crystal display devices (LCDs), plasma display panels (PDPs), electro luminescent displays (ELD), and vacuum fluorescent (VFD) Various flat panel display devices such as displays have been studied, and some of them are already used as display devices in various devices.

Among them, liquid crystal display (LCD) is the most widely used, replacing the CRT (Cathode Ray Tube) for mobile image display devices because of its excellent image quality, light weight, thinness, and low power consumption. In addition to mobile applications such as monitors, a variety of applications have been developed for television and computer monitors for receiving and displaying broadcast signals.

In order to use such a liquid crystal display as a general screen display device in various parts, it is a matter of how high quality images such as high definition, high brightness and large area can be realized while maintaining the characteristics of light weight, thinness and low power consumption. can do.

Hereinafter, a conventional liquid crystal display and a method of manufacturing the same will be described with reference to the accompanying drawings.

1 is an exploded perspective view showing a general liquid crystal display.

As shown in FIG. 1, a liquid crystal display device includes a liquid crystal injected between a first substrate 1 and a second substrate 2 bonded to each other with a predetermined space, and between the first substrate 1 and the second substrate 2. It consists of layer (3).

In more detail, the first substrate 1 may have a plurality of gate lines 4 in one direction and constant in a direction perpendicular to the gate lines 4 at regular intervals to define the pixel region P. FIG. A plurality of data lines 5 are arranged at intervals. In addition, a pixel electrode 6 is formed in each pixel region P, and a thin film transistor T is formed at a portion where each of the gate lines 4 and the data lines 5 intersect with each other so that the thin film transistors are formed. The data signal of the data line is applied to each pixel electrode according to the signal of the gate line.

In addition, a black matrix layer 7 is formed on the second substrate 2 to block light in portions other than the pixel region P, and portions R corresponding to the respective pixel regions are formed to express colors. , G, B color filter layers 8 are formed, and a common electrode 9 for realizing an image is formed on the color filter layers 8.

In the liquid crystal display as described above, the liquid crystal layer 3 formed between the first and second substrates is aligned by an electric field between the pixel electrode 6 and the common electrode 9, and the liquid crystal layer 3 is aligned. The amount of light passing through the liquid crystal layer 3 can be adjusted according to the degree of orientation of the image.

Such a liquid crystal display device is called a twisted nematic (TN) mode liquid crystal display device, and the TN mode liquid crystal display device has a disadvantage of having a narrow viewing angle, and an in-plane switching (IPS) for overcoming the disadvantage of the TN mode. Mode liquid crystal display device has been developed.

In a transverse electric field mode liquid crystal display, a pixel electrode and a common electrode are formed parallel to each other at a predetermined distance in a pixel area of a first substrate so that a transverse electric field (horizontal electric field) is generated between the pixel electrode and the common electrode and the transverse electric field is generated. This is to align the liquid crystal layer.

Meanwhile, a general method of manufacturing a liquid crystal display device may be classified into a liquid crystal injection method manufacturing method and a liquid crystal drop method manufacturing method according to a method of forming a liquid crystal layer between the first and second substrates.

First, a brief description of a method of manufacturing a liquid crystal display device using a liquid crystal injection method is as follows.

The container containing the liquid crystal material to be injected and the liquid crystal panel into which the liquid crystal is to be injected are placed inside the chamber, and the pressure in the chamber is maintained in a vacuum state to remove moisture from the liquid crystal material or the inner wall of the container and to bubble. At the same time, the interior space of the liquid crystal panel is vacuumed.                         

The liquid crystal injection hole of the liquid crystal panel is immersed in or contacted with a container containing a liquid crystal material in a desired vacuum state, and then the pressure inside the chamber is changed from a vacuum state to an atmospheric pressure state, and the pressure inside the liquid crystal panel and the pressure of the chamber. By the difference, the liquid crystal material is injected into the liquid crystal panel through the liquid crystal injection hole.

There existed the following problems in the liquid crystal display device manufacturing method of such a liquid crystal injection system.

First, after cutting into a unit panel, the liquid crystal injection hole is immersed in the liquid crystal liquid by maintaining the vacuum state between the two substrates, so that the liquid crystal injection takes a lot of time, the productivity is reduced.

Second, in the case of manufacturing a large-area liquid crystal display device, when the liquid crystal is injected by the liquid crystal injection method, the liquid crystal is not completely injected into the panel, which causes a defect.

Third, since the process is complicated and time-consuming as described above, several liquid crystal injection equipment is required, which requires a lot of space.

Accordingly, in order to overcome the problems of the liquid crystal injection method, a method of manufacturing a liquid crystal drop type liquid crystal display device in which a liquid crystal is dropped on one of two substrates and then the two substrates are bonded to each other has been developed.

2 is a flowchart of a manufacturing method of a liquid crystal drop type liquid crystal display device.

That is, the liquid crystal dropping method manufacturing method of a liquid crystal dropping system is a method of bonding two board | substrates together after dropping an appropriate amount of liquid crystal to either one of two board | substrates before bonding two board | substrates together.                         

Therefore, when the ball spacer is used to maintain the cell gap as in the liquid crystal injection method, when the dropped liquid crystal spreads, the ball spacer is moved in the liquid crystal spreading direction and the spacer is pushed to one side, thereby making it impossible to maintain the accurate cell gap.

Therefore, the liquid crystal dropping method should use a fixed spacer (column spacer or patterned spacer) in which the spacer is fixed to the substrate without using the ball spacer.

First, in the liquid crystal display device manufacturing method of the liquid crystal dropping method, an alignment film is apply | coated to the TFT substrate and the color filter substrate whole surface containing the said column spacer, and a rubbing process is carried out.

As described above, the TFT substrate and the color filter substrate on which the alignment process is completed are cleaned (S101), and then, a liquid crystal is dropped into a predetermined region on one of the TFT substrate and the color filter substrate (S102), and each liquid crystal of the remaining substrates. A seal pattern is formed at an outer portion of the panel region by using a dispensing apparatus (S103). At this time, the liquid crystal may also be dropped on one of the two substrates and a seal pattern may be formed.

Then, the substrate on which the liquid crystal is not dropped is inverted (inverted to face each other) (S104), the TFT substrate and the color filter substrate are pressed together, and the seal pattern is cured (S105).

Subsequently, the bonded substrate is cut and processed for each unit liquid crystal panel (S106).

In addition, the liquid crystal display device may be manufactured by performing the external appearance and electrical defect inspection (S107) of the processed unit liquid crystal panel.                         

3 is a cross-sectional view of a liquid crystal display including a column spacer.

3 shows a cross section passing over the gate line, wherein the column spacer 20 is formed to maintain a cell gap between the TFT substrate 30 and the color filter substrate 40.

Here, the thin film transistor array and the color filter array formed on the TFT substrate 30 and the color filter substrate 40 respectively follow the structure shown in FIG. 1.

3, a gate insulating film 15 is interposed between the gate line 4 and the data line (see 5 in FIG. 1) on the TFT substrate 30. A protective film 16 is formed in the layers between the pixel electrodes (see 6 in FIG. 1) to insulate each layer.

The color filter substrate 40 includes a black matrix layer 7 covering the gate line 4, the data line 5, and the thin film transistor T region, a color filter layer 8 formed corresponding to the pixel region, and The common electrode 14 is formed on the entire surface of the second substrate 2 including the black matrix layer 7 and the color filter layer 8.

The column spacer 20 is formed by coating the entire surface of the photosensitive organic material at the cell gap height on the color filter substrate 40 and then patterning the same to leave only a predetermined portion through an exposure process using a mask.

As shown in FIG. 3, the column spacer 20 is fixed to the color filter substrate 40 and is in contact with the TFT substrate 30. The surface of the column spacer in contact with the TFT substrate 30 is not a spherical shape like a ball spacer, but has a flat surface.

Therefore, unlike the ball spacer, in the structure having the column spacer, the contact area between the spacer and the TFT substrate 30 is large.

4A and 4B are a plan view and a sectional view showing a state where a touch spot occurs.

As shown in FIG. 4A, when the liquid crystal panel 10 is swung past while being touched by a finger or a pen in a predetermined direction, as shown in FIG. 4B, the second substrate 2 of the liquid crystal panel is predetermined in a direction where a finger or a pen has passed. The interval is shifted. At this time, after shifting in the touch direction, the second substrate 2 has not been restored to its original state for a long time. In this case, the liquid crystals of the spot where the finger or the pen passed by are scattered, and a phenomenon in which the liquid crystal collects in the peripheral region of the passed spot occurs. In this case, the area where the liquid crystals 3 are collected has a higher cell gap h1 than the cell gap h2 of the other area defined by the height of the column spacer 20, and the place where the finger or the pen passes is where the liquid crystal is. Scattering causes a lack and excess of liquid crystal in the touch region and the touch peripheral region, resulting in a touch failure in which the touch region and the peripheral region are observed as mura.

The reason why such a touch defect is observed in the liquid crystal display device in which the column spacer is formed is that the column spacer is fixed to one substrate and is in planar contact with the opposing substrate, so that the area of contact with the substrate is larger than that of the spherical ball spacer. Judging by That is, it is understood that the touch failure is not easy to recover to the original state due to the increase in the frictional force between the spacer and the opposing substrate due to the shape change of the spacer.

The conventional liquid crystal display as described above has the following problems.

In a conventional liquid crystal display including a column spacer, when the panel surface of the liquid crystal is pushed in a predetermined direction and touched, it takes a long time even if the substrates shifted in opposite directions are not restored or restored to their original state, and thus are not restored. The liquid crystal that is pushed out of the touch area for a time does not recover and light leakage occurs in this area. The failure due to such a touch is understood to be due to the frictional force of the column spacer and the opposing substrate due to the large contact area between the column spacer and the opposing substrate.

This problem is more severe in a large area liquid crystal panel using a dropping method in forming the liquid crystal layer of the liquid crystal panel. Unlike the liquid crystal injection method which is injected by the pressure difference between the inside and the outside of the liquid crystal panel, the liquid crystal dropping method selects a certain amount of liquid crystal and drops the liquid. In this case, the appropriate amount of the liquid crystal dropped on the substrate having the variation according to the process is determined. It is difficult to choose.

The present invention has been made to solve the above problems and is formed to have a projection structure of the laminated structure of the semiconductor layer and the source / drain metal layer to prevent touch failure, and first loaded during the wet etching of the source / drain metal layer of the protrusion It is an object of the present invention to provide a method for manufacturing a liquid crystal display device having a cell gap stability of the entire liquid crystal panel by compensating the part in consideration of the fact that the source / drain metal layer on the side to be more etched is provided.

Method of manufacturing a projection of the liquid crystal display device of the present invention for achieving the above object comprises the steps of preparing a substrate having a loading direction of one direction during the process, and then a semiconductor layer material layer, source / drain material layer on the substrate Depositing, applying a photoresist film on the source / drain material layer, and a transflective part designed to compensate for the side where the substrate is first loaded around the light shield and the light shield on the photoresist, Matching the pattern mask having the pattern mask; and exposing and developing the photosensitive film by using the pattern mask to form a portion corresponding to the light blocking portion of the pattern mask to a first thickness, and to form a portion corresponding to the semi-transmissive portion. Forming a photoresist pattern having a thickness (<first thickness), and using the photoresist pattern to form the source / drain material layer and the semiconductor layer First etching the material layer with the same width, removing the photoresist pattern by a second thickness, and secondly etching the source / drain material layer by using the photoresist pattern to the center of the semiconductor layer material layer. It is characterized in that it comprises the step of forming a source / drain metal layer.

The transflective portion corresponding to the side on which the substrate is first loaded based on the light blocking portion of the pattern mask is larger in size than the transflective portion corresponding to the side on which the substrate is loaded later.

The transverse length of the transflective portion on the first loaded side of the pattern mask is formed to be 0.00000060 to 70 times longer than the length of the long side of the substrate, compared to the transflective portion on the later loaded side.

The primary etching is a dry etching process.                     

In the dry etching process, a mixed gas of SF _6, HCl, and He is used as an etchant.

The secondary etching is a wet etching process.

The wet etching process uses an etchant with a mixed solution of phosphoric acid, acetic acid, nitric acid and ultrapure water.

In addition, a method of manufacturing a protrusion of a liquid crystal display device of the present invention for achieving the same object comprises the steps of preparing a substrate having a loading direction in one direction during the process, and after depositing a semiconductor layer material layer on the substrate Selectively removing the layer using a first mask to form a semiconductor layer, depositing a source / drain material layer over the entire substrate including the semiconductor layer, and overlying the source / drain material layer, Matching the first mask having the light-shielding portion designed for compensation and the second mask having a transmissive portion to the remaining region, and selectively removing the source / drain material layer using the second mask to position the center of the semiconductor layer. Another feature is that it comprises the step of forming a source / drain metal layer.

The light shielding portion of the second mask has a rectangular shape, and a length from a point corresponding to the center of the semiconductor layer to a side corresponding to the side on which the substrate is first loaded corresponds to a side later loaded on the center of the semiconductor layer. It is longer than the length to the side becoming.

The length of the long side of the substrate is greater than the length from the point corresponding to the center of the semiconductor layer to the side corresponding to the side on which the substrate is loaded first compared to the length of the side corresponding to the side on which the substrate is later loaded on the center of the semiconductor layer. It is about 0.00000060 ~ 70 times longer.

The primary etching is a dry etching process.

In the dry etching process, a mixed gas of SF _6, HCl, and He is used as an etchant.

The secondary etching is a wet etching process.

The wet etching process uses an etchant with a mixed solution of phosphoric acid, acetic acid, nitric acid and ultrapure water.

In addition, the manufacturing method of the liquid crystal display device of the present invention for achieving the same object is opposed to each other, preparing a first and a second substrate having a loading direction of one direction, a gate line and Forming a gate electrode, forming a gate insulating film, a semiconductor layer material layer, and a source / drain material layer on the first substrate including the gate line, and applying a photoresist film over the source / drain material layer And a pattern mask having a transflective portion in the remaining region and a transflective portion designed to compensate for the light-shielding portion and the side where the first substrate is first loaded around the light-shielding portion on the photoresist layer, and using the pattern mask. By exposing and developing the photosensitive film, a portion corresponding to the light shielding portion of the pattern mask is formed to a first thickness, and a portion corresponding to the transflective portion is formed. Forming a photoresist pattern having a second thickness (<first thickness); first etching the source / drain material layer and the semiconductor layer material layer by the same width by using the photoresist pattern to be perpendicular to the gate line Forming a data line in one direction, forming a first semiconductor layer and a first source / drain metal layer passing through the gate electrode, and a second semiconductor layer and a second source / drain metal layer on the gate line; Removing the pattern by a second thickness, and second etching the first and second source / drain metal layers by using the photoresist pattern to center the source / drain electrodes and the semiconductor material layer on both sides of the first semiconductor layer. Forming a source / drain metal layer on the second substrate; and including a column spacer at a position corresponding to the protrusion on the second substrate. have.

The second column spacer is further formed on the gate line where the protrusion is not formed.

In addition, the manufacturing method of the liquid crystal display device of the present invention for achieving the same object is opposed to each other, preparing a first and a second substrate having a loading direction of one direction, a gate line and Forming a gate electrode, depositing a gate insulating film and a semiconductor layer material layer on the first substrate including the gate line, and selectively removing the semiconductor layer material layer using a first mask to remove the gate electrode. Forming a second semiconductor layer on the first semiconductor layer and a predetermined portion on the gate line, depositing a source / drain material layer on the entire surface of the first substrate including the first and second semiconductor layers; On top of the source / drain material layer, a light-shielding portion designed for compensating the side on which the first substrate is loaded first and a second mask having a transmissive portion in the remaining region are matched. Selectively removing the source / drain material layer using the second mask to form a source / drain metal layer on both sides of the first semiconductor layer and at the center of the semiconductor layer. And a column spacer formed at a position corresponding to the protrusion on the second substrate.

The second column spacer is further formed on the gate line where the protrusion is not formed.

Hereinafter, with reference to the accompanying drawings will be described in detail the manufacturing method of the projection of the liquid crystal display device of the present invention and the manufacturing method of the liquid crystal display device using the same.

5 is a schematic view showing the protrusion structure.

As shown in FIG. 5, the protrusion structure forms the protrusion 60 on the first substrate 30 and the column spacer 55 on the second substrate 40 at a position corresponding to the protrusion 60. Structure.

The protrusion structure forms a protrusion 60 having a relatively small size (area of the contact portion) facing the column spacer 55, thereby reducing the contact area between the column spacer 55 and the protrusion 60. The structure reduces friction between the two.

This projecting structure reduces the frictional force between the column spacer and the counter substrate by reducing the contact area between the column spacer and the counter substrate in consideration of the fact that a conventional touch failure occurs due to the large contact area between the column spacer and the counter substrate. It is a structure to prevent defects.

In the projection structure in the drawing, the projection 60 formed on the first substrate 30 is a structure in which the semiconductor layer pattern 61 and the source / drain metal layer 62 are stacked from below. In this case, the semiconductor layer pattern 61 is formed by etching in the same process as the semiconductor layer of the thin film transistor, the source / drain metal layer 62 is formed during the etching process of the data line metal.

In this case, the source / drain metal layer 62 may be etched to enter the source / drain metal layer 62 more inwardly than the semiconductor layer pattern 61 so that the size of the source / drain metal layer 62 may be larger than that of the semiconductor layer pattern 61. Smaller

6A and 6B are plan views showing protrusions to be designed, and FIGS. 7A and 7B are plan views and cross-sectional views after protrusions are formed.

As shown in FIGS. 6A and 6B, the protrusion 60 is formed by stacking a square semiconductor layer pattern 61 and a source / drain metal layer 62 having the same length of the horizontal and vertical sides, respectively.

In this case, a mask (not shown) for patterning the source / drain metal layer 62 is formed on the opening (the source / drain metal layer for patterning) in a size corresponding to the source / drain metal layer 62 shown. In the case where the photoresist film is a negative photoresist film or a light shielding part (in the case where the photoresist film formed on the source / drain metal layer for patterning is a positive photoresist film), a mask is used.

However, as shown in FIGS. 7A and 7B, when the actual protrusion structure is formed, the etchant reaches the loaded side early in the wet etching process for forming the source / drain metal layer, so that etching occurs relatively more. The actually formed source / drain metal layer 62a is more etched by the length of a than the transverse length of the designed source / drain metal layer 62.                     

The semiconductor layer pattern 61 is a substrate that is fixed in the chamber by dry etching using an etchant such as SF ₆ , HCl, He, etc., so that the desired profile can be easily implemented, but the source / drain metal layer 62a is phosphoric acid. Etching tends to be better at some sites and less likely at some sites as it proceeds on a substrate that is inlined with a mixed etchant of acetic acid, nitric acid, and deionized water, showered .

8 is a view illustrating a method of forming the source / drain metal layer of the protrusion of FIG. 8.

As such, as shown in FIG. 8 in which the source / drain metal layer of the protrusion is etched more to one side than the designed shape, the amount of etchant supplied to the source / drain metal layer is etched with respect to the loading direction. It is guessed because it differs in right and left sides of the drain metal layer formation site | part. In other words, the shower supplying the etchant is fixed, and the side which comes first as the substrate is loaded to one side is relatively supplied with the etchant first and more.

As described above, the protrusion of the semiconductor layer pattern 61 and the source / drain metal layer 62a may have different components and different etching tendencies, respectively, from the semiconductor layer pattern 61 and the source / drain metal layer 62a. Since etching is performed using another etchant, the source / drain metal layer 62a is formed to be relatively centered. This is performed in a five mask process in which the semiconductor layer pattern 61 and the source / drain metal layer 62a are etched using different masks, or in four masks in which the regions of the same mask are defined differently. The same phenomenon occurs in the process. This is because the etching of the source / drain metal layer 62a is performed regardless of the number of masks, in addition to the etching of the semiconductor layer pattern.

9 is a cross-sectional view showing a completed protrusion and a column spacer corresponding thereto.

As shown in FIG. 9, when the protrusion 60 having the source / drain metal layer 62a formed on the semiconductor layer pattern 61 by being biased to one side and the column spacer 55 correspond to an upper portion of the protrusion 60, That is, the surface of the source / drain metal layer 62a is biased toward one side of the column spacer 55.

The actual area of the column spacer 55 is defined corresponding to the lower portion of the projection 60 formed on the first substrate 30, that is, the surface formed on the first substrate 30.

However, when the center of the forming portion of the column spacer 55 and the lower surface of the protrusion 60 is aligned, the source / drain metal layer 62a is biased to one side, so that the first and second substrates 30 are separated. 40, the column spacers 55 are biased to correspond to the source / drain metal layer 62a of the protrusion 60. In this case, deformation of the column spacer 55 in contact with the protrusion 60 occurs due to pressurization during bonding, and thus, cell gap imbalance occurs due to left and right unbalanced deformation of the column spacer 55.

10 is a graph showing the cell gap tendency for each region of the structure having protrusions.

As shown in FIG. 10, when the cell gap is observed on a total of four horizontal lines while increasing the distance from one side of the substrate, a common cell gap is observed on the horizontal lines. As such, the portion where the cell gap is lowered is represented by vertical streaks when the liquid crystal panel is driven.

Thus, the appearance of vertical streaks is considered to be caused by the cell gap unevenness of the column spacer caused by the bias of the source / drain metal layer due to the difference in the left and right etching rates of the protrusion structure.

Experimentally, when the size of the substrate is 1100mm * 1250mm, the bias is 0.8㎛, when the size of the substrate is 590mm * 670mm, the bias is 0.4㎛.

Hereinafter, a method of manufacturing the liquid crystal display device of the present invention, which compensates for the portion where the bias of the protrusion structure to control the cell gap nonuniformity of the protrusion structure described above is designed.

11A and 11B are plan views and cross-sectional views showing design patterns of the projections used in the method of manufacturing the liquid crystal display device of the present invention.

As shown in FIGS. 11A and 11B, the projection of the liquid crystal display of the present invention is formed by increasing the width of the source / drain metal layer on the side to be loaded first with respect to the loading direction of the substrate.

This is more designed by offsetting the wet side for forming the source / drain metal layer because the side on which the substrate is first loaded is more etched.

As described above, when the size of the substrate was experimentally 1100mm * 1250mm, the bias was 0.8 μm, and when the size of the substrate was 590mm * 670mm, the bias was 0.4 μm. In this case, if the long side of the substrate is transverse, the compensation for bias is preferably corrected by increasing the region of the side loaded first at 0.00000064 times to 0.000000067 times of the horizontal length, and more broadly at 0.00000060 to 0.00000070 times. Correction of this length may include a light blocking portion (when the photoresist film for defining the source / drain metal layer is a positive series) or a transmissive portion (the photoresist film for defining the source / drain metal layer) corresponding to the source / drain metal layer forming portion on the mask. Negative series).

EMBODIMENT OF THE INVENTION Hereinafter, the protrusion manufacturing method of the liquid crystal display device of this invention is demonstrated in detail with reference to drawings.

On the other hand, the thin film transistor array formed on the first substrate of the liquid crystal display device has a four mask process or five masks depending on whether the semiconductor layer (semiconductor layer pattern) and the data line layer (source / drain metal layer) are formed with the same mask. It is divided into processes. The four mask process is a process in which a mask is required in order of a gate line, a semiconductor layer and a data line, a protective film hole, and a pixel electrode, and the five mask process is a process using a separate mask for forming a semiconductor layer and forming a data line.

In the following, the process of manufacturing the protrusions in the 4 mask process and the 5 mask process is introduced one after the other.

12A to 12D are process cross-sectional views showing the process of manufacturing the protrusions by the four mask process.

First, in the four mask process, as shown in FIG. 12A, the gate line 101 is formed on the first substrate 100.

Subsequently, a gate insulating layer 105, a semiconductor layer material layer 131c, and a source / drain material layer 132c are formed on the entire surface of the first substrate 100 including the gate line 101.

Subsequently, the photoresist layer 160 is formed on the source / drain material layer.

Subsequently, the light blocking portion 71 of a predetermined portion is spaced apart from the first substrate 100 by a predetermined interval, and the first and second transflective portions 72a and 72b are formed on both sides thereof, and the transmissive portion 73 is formed in the remaining region. The mask 70 is prepared. Here, the first transflective portion 72a has a smaller width toward the side where the first substrate 100 is loaded first, and the second transflective portion 72b on the opposite side has a larger width than this. Here, a portion corresponding to the light blocking portion 71 and the first and second transflective portions 72a and 72b of the mask 70 is a portion where the semiconductor layer pattern (see 131 of FIG. 12B) is to be formed, and the first portion is formed. The portion corresponding to the second transflective portions 72a and 72b is a portion where the source / drain material layer 132c is relatively more patterned than the semiconductor layer pattern 131.

Next, as illustrated in FIG. 12B, the photosensitive film is exposed and developed using the mask 70 to form a first photoresist pattern 160a.

At this time, a portion corresponding to the first and second transflective portions 72a and 72b of the mask 70 is etched a predetermined thickness more than a portion corresponding to the light blocking portion during exposure and development, as shown in FIG. 12B, The first photoresist pattern 160a shows a thickness difference for each region.

Subsequently, the source / drain material layer and the semiconductor may be formed by using a mixed gas such as SF _6, HCl, or Het as an etchant in a portion where the photoresist pattern is not remaining, using the first photoresist pattern 160a as a mask. The layer material layer is removed to leave the semiconductor layer pattern 131 and the source / drain material layer 132d of the same width. In this case, the dry etching process is performed.

As shown in FIG. 12C, the first photoresist pattern 160a is removed to form a second photoresist pattern 160b by removing a portion that is thinly formed corresponding to the transflective portion of the mask. At this time, the thickness of the photoresist pattern is removed to the same level, but since the portion corresponding to the transflective portion is relatively thinner, the photoresist pattern is removed first to expose the underlying source / drain material layer 132d.

Subsequently, the first substrate 100 including the source / drain material layer 132d is loaded and wet etching is performed in correspondence with a shower in which phosphoric acid, acetic acid, nitric acid, and ultrapure water (DI Water) are showered with a mixed solution. At this time, the first loaded side, the left side of the drawing first, and the etching proceeds a lot, as shown in Figure 12d, after the source / drain metal layer 132a with respect to the center of the semiconductor layer pattern 131 It is formed so as to be in position without being biased into parts.

In this method, when the substrate is loaded, when wet etching for patterning the source / drain metal layer 132a takes place in a shower manner, the loaded side is etched by a more, so that it is formed by increasing by as much as a. It is a reward.

13A to 13D are cross-sectional views illustrating the process of manufacturing the protrusions by the five mask process.

In the five mask process, as shown in FIG. 13A, the gate line 101 is formed on the first substrate 100, and then the gate insulating layer 105 and the semiconductor layer material layer 131c are sequentially deposited.

Subsequently, after the photoresist film is coated on the semiconductor layer material layer 131a, the photoresist film pattern 161 having a predetermined width is formed by selectively removing the photoresist film using the first mask 90. In the first mask 90, a light blocking portion 91 is defined at a predetermined portion and a transmission portion 92 is defined in the remaining region. Herein, it is assumed that the first photoresist layer pattern 161 is formed at a portion corresponding to the light blocking unit 91 on the assumption that the photoresist layer is a positive series.

As shown in FIG. 13B, the semiconductor layer material layer is etched using the first photoresist pattern 161 as a mask to form a semiconductor layer pattern 131.

As shown in FIG. 13C, a source / drain material layer 132c is deposited on the entire surface of the first substrate 100 including the upper portion of the semiconductor layer pattern 131.

Subsequently, a photoresist film is coated on the source / drain material layer 132c.

Subsequently, a second mask having a light blocking portion 96 having a smaller width than that of the light blocking portion 91 of the first mask 90 and a transmissive portion 97 defined in the remaining area on the first substrate 100. Align 95. Here, the light shielding portion 96 of the second mask 95 is formed with the left side longer than a right side relative to the center of the lower semiconductor layer pattern 131. At this time, the left side is the side where the substrate is loaded first, and this area is compensated so that the second mask is designed.

Next, the second photoresist layer pattern 162 is formed using the second mask 95.                     

When the source / drain material layer 132c is etched using the second photoresist pattern 162, the compensation value may be reduced even if the left side of the source / drain material layer 132c is etched first, as shown in FIG. 13D. Since the source / drain metal layer 132 is formed, the source / drain metal layer 132 is patterned at the center of the semiconductor layer pattern 131.

14A and 14B are plan views and cross-sectional views of protrusions manufactured by the method of manufacturing the protrusions of the liquid crystal display of the present invention.

As shown in FIGS. 14A and 14B, when the mask for forming the protrusion is formed by compensating for the portion of the side where the substrate is first loaded in correspondence with the center of the semiconductor layer pattern, the source / drain metal layer forming region is defined. In this case, the source / drain metal layer is located at the center of the semiconductor layer pattern by compensating for the part to be removed in advance even if over-etching occurs at the side where the loading is first performed during wet etching.

The semiconductor layer pattern of the protrusion is formed in the same process as the semiconductor layer forming the thin film transistor when the liquid crystal display is formed, and the source / drain metal layer is formed in the same process as the data line.

FIG. 15 is a plan view of a liquid crystal display device formed by the method for manufacturing a liquid crystal display device of the present invention, and FIG. 16 is a structural sectional view taken along lines II ′ and II ′ of FIG. 15.

15 and 16, the liquid crystal display device to which the manufacturing method of the liquid crystal display device of the present invention is applied includes a first substrate 100 and a second substrate 120 bonded to each other with a large fixed space, and the first substrate. The liquid crystal layer 150 is formed between the 100 and the second substrate 120.

In more detail, a plurality of gate lines 101 and data lines 102 are formed in the first substrate 100 to vertically cross each other to define pixel regions, and in each of the pixel regions, a transverse electric field is alternately formed. Pixel electrodes 123 and common electrodes 107a are formed, and a thin film transistor TFT is formed at a portion where the gate lines 101 and the data lines 102 cross each other. A common line 107 disposed in the pixel parallel to the gate line 101 and a storage electrode extending from the pixel electrode 103 and overlapping the common line 107 are further provided.

The thin film transistor TFT includes a gate electrode 101a, a semiconductor layer 104 covering the gate electrode, and source / drain electrodes 102a and 102b formed on both sides of the semiconductor layer 104. Is formed.

Specifically, the common line 107 and the common electrode 107a are integrally formed and simultaneously formed with the gate line 101, and include copper (Cu), aluminum (Al), chromium (Cr), and molybdenum (Mo). ) And low resistance metals such as titanium (Ti).

The pixel electrode 103 is alternately formed with the common electrode 107a. The pixel electrode 103 may be formed at the same time as the data line 102 or may be formed on different layers. city).

In this case, the common electrode 107a and the pixel electrode 103 may cross each other in a straight line shape or may be formed in a zigzag shape as shown in the figure.

An insulating film is further provided between the two layers of the common electrode 107a and the pixel electrode 103, which is an insulating film such as the gate insulating film 105 or the protective film 106.

In addition, a protrusion 130a which is a laminate of the semiconductor layer pattern 131 and the source / drain metal layer 132a is formed in a predetermined portion above the gate line 101.

On the other hand, the black matrix layer 121 for blocking light of portions (gate lines and data line regions, thin film transistor regions) except for pixel regions on the second substrate 120 facing the first substrate 100. Is formed, and a color filter layer (not shown) is formed on a portion corresponding to each pixel area, and an overcoat layer 123 is formed on the black matrix layer 121 and the color filter layer 122. do.

In addition, a first column spacer 141 is formed on the surface of the overcoat layer 123 by using a material such as a photocurable resin. The first column spacer 141 is formed to correspond to the protrusion 130a over the entire panel at equal intervals.

The second column spacer 142 is formed on the gate line 101 of another pixel in which the protrusion 130a is not formed.

Here, the first and second column spacers 141 and 142 are formed on the overcoat layer 123 at the same height. Accordingly, the first column spacer 141 is formed in direct contact with the passivation layer 106 on the protrusion 130a to correspond to a portion where the protrusion 130a is further formed on the gate line 101. The column spacer 142 is formed to be spaced apart from the passivation layer 106 by a predetermined interval.

At this time, the first column spacer 141 minimizes the contact area between the first substrate 100, which is the opposite substrate, corresponding to the upper portion of the protrusion 130a while maintaining the cell gap. The frictional force can be reduced to prevent touch failure.

When the second column spacer 142 is not in direct contact with the first substrate 100 and is pressed by a local pressure on the surface of the first substrate or the second substrate, the second space spacer 142 It is possible to minimize the deformation of the column spacer by having a margin that the column spacer may not be deformed.

In this case, the first and second column spacers 141 and 142 are formed in the same size and the same height. The first column spacer 141 and the second column spacer 142 mainly react with light to form a photocurable resin such as photoacryl or a low dielectric constant (eg, dielectric constant of 2.0 or less). Polyimide), and the like.

15 and 16 illustrate a transverse electric field type (IPS) liquid crystal display device, the same principle may be applied to the TN mode. In this case, in the structures of FIGS. 16 and 16, the common line and the common electrode are excluded on the first substrate 100, the pixel electrode 103 is formed in one pattern in the pixel area, and the second substrate 120 is formed. Will be formed instead of the overcoat layer.

 The manufacturing method of the liquid crystal display device of the present invention as described above has the following effects.

First, it is possible to prevent the touch failure by minimizing the friction force by reducing the contact area between the column spacer and the opposing substrate by adopting the projection structure.

Second, by forming a column spacer spaced apart from the opposing substrate at a predetermined portion to prevent a poor deterioration of the column spacer, it is possible to prevent the coating unevenness (taking due to the poor deterioration).

Third, in the protrusions formed of a stack of a semiconductor layer and a source / drain metal layer on the substrate, the shape of the finally formed protrusions may be compensated by designing the source / drain metal layer, which is the upper layer of the protrusions, even if the side on which the substrate is first loaded is etched more. You will be at the right place. Accordingly, since the column spacers formed corresponding to the protrusions are formed, the column spacers may be formed to correspond to the protrusions at the center portion of the column spacer during bonding, so that the cell gap is stably maintained in the entire panel.

Claims (18)

Preparing a substrate having a loading direction in one direction during the process; Depositing a semiconductor layer material layer and a source / drain material layer sequentially on the substrate; Applying a photoresist film on the source / drain material layer; Associating a pattern mask having a light transmissive portion and a transflective portion in the remaining area, the transmissive portion being designed to compensate for the side where the substrate is first loaded around the light shielding portion on the photoresist; The photoresist is exposed and developed by using the pattern mask, and a portion corresponding to the light blocking portion of the pattern mask is formed to have a first thickness, and a portion corresponding to the transflective portion has a second thickness (<first thickness). Forming a photoresist pattern; First etching the source / drain material layer and the semiconductor layer material layer by the same width using the photoresist pattern; Removing the photoresist pattern by a second thickness; And secondly etching the source / drain material layer using the photoresist pattern to form a source / drain metal layer in the center of the semiconductor layer material layer. The method of claim 1, And a transflective portion corresponding to the side on which the substrate is loaded first based on the light blocking portion of the pattern mask is larger in size than the transflective portion corresponding to the side on which the substrate is loaded later. The method of claim 2, The transverse length of the transflective portion on the side of the first loading side of the pattern mask is 0.00000060 to 70 times longer than the transflective portion on the side of the later loading, the liquid crystal display characterized in that it is formed Process of manufacturing the projections. The method of claim 1, The first etching process is a projection manufacturing method of the liquid crystal display device, characterized in that the dry etching process. The method of claim 4, wherein The dry etching process is a projection manufacturing method of the liquid crystal display device, characterized in that the mixed gas of SF _6, HCl, He as an etchant. The method of claim 1, The secondary etching is a process for manufacturing a projection of the liquid crystal display device, characterized in that the wet etching process. The method of claim 6 The wet etching process is a projection manufacturing method of a liquid crystal display device, characterized in that the mixed solution of phosphoric acid, acetic acid, nitric acid and ultrapure water as an etchant. Preparing a substrate having a loading direction in one direction during the process; Depositing a semiconductor layer material layer on a substrate and selectively removing the semiconductor layer material layer using a first mask to form a semiconductor layer; Depositing a source / drain material layer on the entire surface of the substrate including the semiconductor layer; Matching a second mask having a light blocking portion on the side of which the substrate is first loaded and a transmission portion on the remaining region on the source / drain material layer; And selectively removing the source / drain material layer using the second mask to form a source / drain metal layer at a position in the center of the semiconductor layer. The method of claim 8, The light blocking portion of the second mask has a rectangular shape, and a length from a point corresponding to the center of the semiconductor layer to a side corresponding to the side on which the substrate is loaded first corresponds to a side loaded later in the center of the semiconductor layer. The process for producing protrusions of a liquid crystal display device, which is longer than the length to the side. The method of claim 9, The length of the long side of the substrate is greater than the length from the point corresponding to the center of the semiconductor layer to the side corresponding to the side on which the substrate is loaded first compared to the length of the side corresponding to the side on which the substrate is loaded later Method for manufacturing a projection of a liquid crystal display device, characterized in that 0.00000060 to 70 times longer. The method of claim 8, The first etching process is a projection manufacturing method of the liquid crystal display device, characterized in that the dry etching process. The method of claim 11, The dry etching process is a projection manufacturing method of the liquid crystal display device, characterized in that the mixed gas of SF _6, HCl, He as an etchant. The method of claim 8, The secondary etching is a process for manufacturing a projection of the liquid crystal display device, characterized in that the wet etching process. The method of claim 13 The wet etching process is a projection manufacturing method of a liquid crystal display device, characterized in that the mixed solution of phosphoric acid, acetic acid, nitric acid and ultrapure water as an etchant. Preparing first and second substrates facing each other and having a loading direction in one direction; Forming a gate line and a gate electrode on the first substrate; Forming a gate insulating film, a semiconductor layer material layer, and a source / drain material layer on the first substrate including the gate line; Applying a photoresist film on the source / drain material layer; Associating a pattern mask having a light transmissive portion and a transflective portion in the remaining region, the transmissive portion of which the first substrate is first loaded around the light shielding portion is compensated for; The photoresist is exposed and developed by using the pattern mask, and a portion corresponding to the light blocking portion of the pattern mask is formed to have a first thickness, and a portion corresponding to the transflective portion has a second thickness (<first thickness). Forming a photoresist pattern; The first semiconductor layer and the first semiconductor layer passing through the gate electrode by forming a data line in a direction perpendicular to the gate line by first etching the source / drain material layer and the semiconductor layer material layer with the same width by using the photoresist pattern. Forming a first source / drain metal layer and a second semiconductor layer and a second source / drain metal layer over the gate line; Removing the photoresist pattern by a second thickness; Second etching the first and second source / drain metal layers using the photoresist pattern to form source / drain electrodes on both sides of the first semiconductor layer and a center of the semiconductor layer material layer; And a column spacer at a position corresponding to the protrusion on the second substrate. The method of claim 15, And a second column spacer is further formed on the gate line where the protrusion is not formed. Preparing first and second substrates facing each other and having a loading direction in one direction; Forming a gate line and a gate electrode on the first substrate; After depositing a gate insulating film, a semiconductor layer material layer on the first substrate including the gate line and selectively removing the semiconductor layer material layer using a first mask to pass through the gate electrode and the first semiconductor layer and the gate Forming a second semiconductor layer at a predetermined portion on a line; Depositing a source / drain material layer on the entire surface of the first substrate including the first and second semiconductor layers; Matching a second mask having a light blocking portion on the side of which the first substrate is loaded first and a transmissive portion on the remaining region on the source / drain material layer; Selectively removing the source / drain material layer using the second mask to form a source / drain metal layer on both sides of the first semiconductor layer and a source / drain metal layer at a position in the center of the semiconductor layer; And a column spacer at a position corresponding to the protrusion on the second substrate. The method of claim 17, And a second column spacer is further formed on the gate line where the protrusion is not formed.

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