KR20060076598A - Method of fabricating inkjet printhead - Google Patents

Abstract

Disclosed is a method of manufacturing an inkjet printhead. The disclosed method of manufacturing an inkjet printhead includes etching a surface of a substrate to form a plurality of first trenches for forming at least one restrictor to a predetermined depth, and forming a plurality of etch stop walls for defining an ink chamber size. Forming a second trench of a shallower depth than the first trench; Forming at least one post and an etch stop wall made of an oxide in a portion where the first trenches and the second trenches are located; Forming a nozzle plate on which a nozzle is formed; Forming a manifold to expose the post on the back side of the substrate; Forming a restrictor by removing posts exposed through the manifold; And forming an ink chamber in communication with the restrictor toward the surface of the substrate.

Description

Method of fabricating inkjet printhead

1 is a partial cross-sectional view of a conventional inkjet printhead.

2 to 4 are diagrams for describing a method of manufacturing the inkjet printhead shown in FIG. 1.

3A to 17B are views for explaining a method of manufacturing an inkjet printhead according to an embodiment of the present invention.

<Explanation of symbols for the main parts of the drawings>

200 ... Substrate 202 ... Manifold

204 ... nozzle 206 ... ink chamber

208 ... Lister 211 ... Oxide

220 ... nozzle plate 221 ... first protective layer

222 ... 2nd protective layer 224 ... thermal conductive layer

226 ... Third passivation layer 227 ... Seed layer

228 Heat dissipation layer 242 Heater

244 ... wire 250 ... etched jersey wall

260 ... etch barrier 270 ... post

The present invention relates to a method of manufacturing an inkjet printhead, and more particularly, to a method of manufacturing an inkjet printhead of a thermal drive type which can simplify the process and improve the precision.

An inkjet printhead is an apparatus for ejecting a small droplet of printing ink to a desired position on a recording sheet to print an image of a predetermined color. Such inkjet printheads can be largely classified in two ways depending on the ejection mechanism of the ink droplets. One is a heat-driven inkjet printhead which generates bubbles in the ink by using a heat source and ejects ink droplets by the expansion force of the bubbles, and the other is ink due to deformation of the piezoelectric body using a piezoelectric body. A piezoelectric drive inkjet printhead which discharges ink droplets by a pressure applied thereto.

The ink droplet ejection mechanism of the thermally driven inkjet printhead will be described in detail as follows. When a pulse current flows through a heater made of a resistive heating element, heat is generated in the heater and the ink adjacent to the heater is instantaneously heated to approximately 300 ° C. Accordingly, as the ink boils, bubbles are generated, and the generated bubbles expand and apply pressure to the ink filled in the ink chamber. As a result, the ink near the nozzle is discharged out of the ink chamber in the form of droplets through the nozzle.

Here, the thermal driving method is classified into top-shooting, side-shooting, and back-shooting according to the bubble growth direction and the ink droplet ejection direction. Can be. In the top-shooting method, the growth direction of the bubble and the ejection direction of the ink droplets are the same. In the side-shooting method, the growth direction of the bubble and the ejection direction of the ink droplets are perpendicular to each other. An ink droplet ejecting method in which the growth direction and the ejecting direction of the ink droplets are opposite to each other.

Such thermally driven inkjet printheads generally must meet the following requirements. First, the production should be as simple as possible, inexpensive to manufacture, and capable of mass production. Second, in order to obtain a high quality image, the distance between adjacent nozzles should be as narrow as possible while suppressing cross talk between adjacent nozzles. In other words, in order to increase dots per inch (DPI), it is necessary to be able to arrange a plurality of nozzles at high density. Third, for high speed printing, the period of refilling ink in the ink chamber after the ink is ejected from the ink chamber should be as short as possible, and at the same time, the heated ink and the heater should be cooled quickly to increase the driving frequency.

1 is a cross-sectional view of a conventional thermally driven inkjet printhead. Referring to FIG. 1, an ink chamber 106 in which ink to be discharged is filled is formed on a surface side of the substrate 100, and a back side of the substrate 100 is used to supply ink to the ink chamber 106. Manifold 102 is formed. In addition, between the ink chamber 106 and the manifold 102, a restrictor 108, a flow path for supplying ink from the manifold 102 to the ink chamber 106, vertically penetrates the substrate 100. It is formed. Meanwhile, an etch stop wall 150 is provided on the surface of the substrate 100 so as to surround the side surface of the ink chamber 106. The etch stop wall 150 limits the size of the ink chamber 106 to achieve high integration of the nozzle 104.

The nozzle plate 120 is provided on the substrate 100 on which the ink chamber 106, the restrictor 108, and the manifold 102 are formed. The nozzle plate 120 is composed of a plurality of material layers stacked on the substrate 100. These material layers include first, second and third protective layers 121, 122, 126, a heat conductive layer 124, and a heat dissipation layer 127. A heater 142 is formed between the first passivation layer 121 and the second passivation layer 122, and a conductor 144 is formed between the second passivation layer 122 and the third passivation layer 126. ) Is formed. The thermal conductive layer 124 is formed on the second protective layer 122 and is in contact with the upper surface of the substrate 100 through contact holes formed through the first protective layer 121 and the second protective layer 122. . The heat conductive layer 124 serves to conduct the heat around the heater 142 and the heater 142 to the substrate 100 and the heat dissipation layer 128. The heat dissipation layer is formed on the upper surfaces of the third protective layer 126 and the heat conducting layer 124 to serve to dissipate heat to the outside of the heater 142 and its surroundings. On the other hand, the nozzle plate 120 is formed through the nozzle. Here, the nozzle includes a lower nozzle 104a formed in the first, second and third protective layers and an upper nozzle 104b formed in the heat dissipation layer. In FIG. 1, reference numeral 127 denotes a seed layer for forming the heat dissipation layer 128 by electroplating.

2 to 4 schematically illustrate a method of manufacturing the inkjet printhead shown in FIG. First, referring to FIG. 2, a trench 151 is formed on the surface of the substrate 100 to a width of about 2 μm, and then an etch stop wall 150 made of silicon oxide is formed in the trench 151. do. Here, the etch stop wall 150 is formed by filling the inside of the trench 151 with the oxide of the substrate 100 by an oxidation process. Next, referring to FIG. 3, the first protective layer 121, the heater 142, the second protective layer 122, the conductive wire 144, the thermal conductive layer 124, and the first protective layer 121 are formed on the substrate 100. After forming the third protection layer 126, the first, second and third protection layers 121, 122, and 126 are etched to form a lower nozzle 104a exposing the surface of the substrate 100. Next, referring to FIG. 4, the seed layer 127 is formed on the resultant surface of FIG. 3, and a nozzle-shaped mold (not shown) is formed at a portion where the nozzle 104 is to be located. Subsequently, the heat dissipation layer 128 is formed on the upper surface of the seed layer 127 on both sides of the mold by electroplating, and then the lower nozzle 104a and the upper nozzle 104b are removed when the mold is removed. Nozzle 104 is formed. The manifold 102 is formed on the back side of the substrate 100, and the restrictor 108 is formed to a predetermined depth by etching the back side of the substrate 100 on which the manifold 102 is formed. Finally, when the substrate 100 exposed through the nozzle 104 is etched to form the ink chamber 106 connected to the restrictor 108, the inkjet printhead is completed.

However, in the inkjet printhead manufacturing method as described above, a trench 151 having a relatively wide width is formed on the surface side of the substrate 100. An etching stop wall 150 is formed in the trench 151 by an oxidation process. There is a problem that takes a long time. In addition, the restrictor 108 is formed by etching the back side of the substrate 102 on which the manifold 102 is formed by using a photolithography process, due to the step generated by the manifold 102. There is a problem that the precision of the restrictor 108 is lowered.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object thereof is to provide a method of manufacturing an inkjet printhead of a thermal drive type which can simplify the process and improve the precision.

In order to achieve the above object,

Method of manufacturing an inkjet printhead according to an embodiment of the present invention,

(A) forming a plurality of first trenches for forming at least one restrictor to a predetermined depth by etching the surface of the substrate, and a plurality of second trenches for forming an etch stop wall defining a size of the ink chamber; Forming to a depth shallower than the first trench;

(B) forming at least one post made of oxide and the etch stop wall in a portion where the first trenches and the second trenches are located;

(C) forming a nozzle plate having a nozzle formed on the substrate;

(D) forming a manifold to expose the post on the back side of the substrate;

(E) forming the restrictor by removing the post exposed through the manifold; And

(F) forming the ink chamber in communication with the restrictor toward the surface of the substrate.

Here, the substrate is preferably made of n-type silicon (n-type Si).

In step (a),

Forming a plurality of first grooves for forming the first trenches and a plurality of second grooves for forming the second trenches in a predetermined region of the substrate surface;

Etching the first grooves to a predetermined depth perpendicular to the surface of the substrate to form a plurality of first upper trenches; And

And etching the first upper trenches and the second grooves to a predetermined depth perpendicular to the surface of the substrate, respectively, to form the first trenches and the second trenches.

The first grooves and the second grooves may be formed by forming a first etching mask on the surface of the substrate and etching the surface of the substrate exposed through the first etching mask. Here, the first grooves and the second grooves may be formed by etching the surface of the substrate using an alkaline solution such as KOH or TMAH as an etchant, wherein the first grooves and the second grooves are pyramid shaped. It can be formed as.

The first upper trenches form a second etching mask to expose the first grooves on the first etching mask, and the bottom of the first grooves is perpendicular to the surface of the substrate using the second etching mask. Can be formed by etching to a predetermined depth. The first upper trenches may be formed by a macroporous Si etching process that anisotropically etches the bottom of the first grooves to a predetermined depth by using an HF solution as an etching solution.

The first trenches and the second trenches remove the second etching mask and etch the bottom of the first upper trench and the second grooves exposed through the first etching mask to a predetermined depth perpendicular to the surface of the substrate. It can be formed by. Here, the first trenches and the second trenches are preferably formed by a macroporous silicon etching process for anisotropically etching the bottom of the first upper trench and the second grooves to a predetermined depth using an HF solution as an etching solution.

The first trench and the second trench may be formed to have a width of 0.1 μm to 10 μm, preferably 0.1 μm to 1 μm.

In the step (b), the post and etch stop walls may be formed by oxidizing the substrate around the first trenches and the second trenches.

The (c) step,

Sequentially stacking first, second, and third protective layers on the substrate, and forming a heater and a conductive wire connected to the heater between the protective layers; And

And etching the second and third protective layers to form the nozzle exposing the first protective layer. The method may further include forming a heat dissipation layer made of a metal on the third protective layer.

A thermal conductive layer in contact with the substrate and the heat dissipation layer may be further formed between the protective layers.

In the step (d), the manifold may be formed by wet etching the back surface of the substrate to a predetermined depth. And, in the step (e), the restrictor may be formed by etching the post exposed on the back side of the substrate until the first protective layer is exposed.

An etch stop layer may be formed on the surface of the substrate on which the manifold and the restrictor are formed by depositing parylene.

The (bar) step,

Removing the first protective layer exposed through the nozzle;

Etching the surface side of the substrate exposed through the first protective layer to a predetermined depth to form the ink chamber; And

And removing the etch stop layer.

Here, the ink chamber is preferably formed by isotropic etching the surface of the substrate exposed through the first protective layer using XeF ₂ gas as an etching gas.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. Like reference numerals in the drawings refer to like elements, and the size or thickness of each element may be exaggerated for clarity. In addition, when one layer is described as being on top of a substrate or another layer, the layer may be present over and in direct contact with the substrate or another layer, with a third layer in between.

5A to 17B are views for explaining a method of manufacturing an inkjet printhead according to a preferred embodiment of the present invention.

5A and 5B are cross-sectional views and plan views illustrating a state in which a plurality of first grooves 272 and second grooves 252 are formed on a surface of the substrate 200. 5A and 5B, an oxide film is formed on the surface of the substrate 200 and patterned to form a first etching mask 210 exposing a predetermined region of the surface of the substrate 200. Here, the substrate 200 is preferably made of n-type Si for a macro porous silicon etching process to be described later. In addition, by etching the surface of the substrate 200 exposed through the first etching mask 210, a plurality of first grooves 272 and an ink chamber for forming at least one restrictor (208 of FIG. 17A) and an ink chamber ( A plurality of second grooves 252 are formed to form an etch stop wall (250 of FIG. 17A) defining the size of 206 of FIG. 17A. Here, the first groove 272 and the second grooves 252 may be formed to a size of 0.1㎛ ~ 10㎛, preferably 0.1㎛ ~ 1㎛.

In detail, the first groove 272 and the second grooves 252 may be formed by wet etching the surface of the substrate 200 using an alkaline solution such as KOH or TMAH (Tetramethyl Ammonium Hydroxide) as an etchant. In this case, the first grooves 272 and the second grooves 252 are each formed in a pyramid shape. In FIG. 5A, reference numeral 211 denotes an oxide film formed on the back surface of the substrate 200.

6, the bottoms of the first grooves 272 are etched to form a plurality of first upper trenches 271 ′ to a predetermined depth. Specifically, the first grooves 272 are exposed by forming the second etching mask 215 on the top surface of the first etching mask 210 to cover the second grooves 252. When the bottoms of the first grooves 272 are etched to a predetermined depth perpendicular to the surface of the substrate 200 by using the second etching mask 215, a plurality of first upper trenches 271 ′ are formed. . Here, the first upper trenches 271 ′ are formed by deep etching the substrate 200 made of n-type silicon to a predetermined depth by a macro porous silicon etching process. desirable. Here, the macroporous silicon etching process includes anisotropically etching the bottom of the first grooves 272 to a predetermined depth by using an HF solution as an etching solution.

Next, referring to FIG. 7, after removing the second etching mask 215, the bottom of the first upper trench 271 ′ and the second grooves 252 exposed through the first etching mask 210 are removed. A plurality of first trenches 271 and second trenches 251 are formed by etching to a predetermined depth. The first trenches 271 and the second trenches 251 may be formed to have a width of 0.1 μm to 10 μm, preferably 0.1 μm to 1 μm, respectively. The first trenches 271 are formed to have a deeper depth than the second trenches 251. As described above, the first trench 271 and the second trenches 251 are formed by deep etching a substrate 200 made of n-type silicon to a predetermined depth by a macroporous silicon etching process. desirable. Here, the macroporous silicon etching process includes anisotropically etching the bottom of the first upper trench 271 ′ and the second grooves 252 to a predetermined depth using an HF solution as an etching solution.

8A and 8B illustrate a state in which at least one post 270 and an etch stop wall 250 made of oxide are formed in a portion where the first trenches 271 and the second trenches 251 are located, respectively. One cross section and a top view. Specifically, when the silicon substrate 200 around the first trench 271 and the second trenches 251 exposed through the first etching mask 210 is oxidized, an etch stop wall made of oxide ( 250 and at least one post 270 are formed. In this case, the etch stop wall 250 is formed to surround the posts 270 as shown in FIG. 8B. In addition, the posts 270 are formed to have a deeper depth than the etch stop wall 250. 8A and 8B, the case where two posts 270 are formed is illustrated, but the present invention is not limited thereto, and one or three or more posts 270 may be formed.

Next, referring to FIG. 9, a first protective layer 221 is formed on the surface of the substrate 200. Specifically, the first protective layer 221 is formed by removing the first etching mask 210 from the surface of the substrate 200, and then depositing silicon oxide or silicon nitride to a predetermined thickness on the surface of the substrate 200. Can be. The first protective layer 221 may be formed of a material different from those of the second and third protective layers 222 and 226 which will be described later.

Next, referring to FIG. 10, the heater 242 is formed on the first protective layer 221 formed on the upper surface of the substrate 200. The heater 242 may be polysilicon, tantalum-aluminum alloy, tantalum nitride, titanium nitride, tungsten silicide, or the like doped with impurities on the entire surface of the first protective layer 221. It can be formed by depositing a heating resistor of a predetermined thickness and then patterning it. The second protective layer 222 is formed on the upper surfaces of the first protective layer 221 and the heater 242. Specifically, the second protective layer 222 may be formed by depositing silicon oxide or silicon nitride to a predetermined thickness. Subsequently, the second protective layer 222 is partially etched to expose a portion of the heater 242, that is, a portion to be connected to the conductor 244, and the second protective layer 222 and the first protective layer 221. ) Is sequentially etched to form contact holes exposing portions of the substrate 200, that is, portions to be in contact with the thermal conductive layer 224. The conductive wire 244 and the thermal conductive layer 224 are formed on the upper surface of the second protective layer 222. The heat conductive layer 224 functions to conduct the heater 242 and the heat around the heater 242 to the substrate 200 and the heat dissipating layer 228 described later. Specifically, the conductive wire 244 and the thermal conductive layer 224 are deposited to a predetermined thickness by sputtering a metal having good electrical and thermal conductivity, such as aluminum (Al) or aluminum alloy or gold (Au) or silver (Ag). It can be formed by patterning it. In this case, the conductive wire 244 and the thermal conductive layer 224 are formed to be insulated from each other. Then, the conductive wire 244 is connected to the heater 242, the thermal conductive layer 224 is in contact with the substrate 200 through the contact hole. A third protective layer 226 is formed on the upper surfaces of the second protective layer 222 and the thermal conductive layer 224. Specifically, the third protective layer 226 may be formed by depositing TEOS (Tetraethylorthosilicate) oxide to a predetermined thickness by plasma enhanced chemical vapor deposition (PECVD). The third protective layer 226 is partially etched to expose the thermal conductive layer 224.

Next, referring to FIG. 11, the third and second protective layers 226 and 222 are etched to form a lower portion of the nozzle 204 of FIG. 12 to expose the first protective layer 221. The lower portion of the nozzle 204 may be formed by sequentially etching the third protective layer 226 and the second protective layer 222 by reactive ion etching (RIE). Then, the seed layer 227 for electroplating is formed on the entire surface of the above result. The seed layer 227 is formed by depositing a metal having a high conductivity such as copper (Cu), chromium (Cr), titanium (Ti), gold (Au), or nickel (Ni) to a predetermined thickness by sputtering. Can be done. Subsequently, a mold 230 for forming a nozzle 204 is formed on an upper surface of the seed layer 227. The mold 230 may be formed by applying a photoresist to the entire surface of the seed layer 227 and then patterning the photoresist and leaving the photoresist only at a portion where the nozzle 204 is to be formed. Here, the upper portion of the mold 230 is formed in a tapered shape whose diameter gradually decreases toward the upper side. Next, a heat dissipation layer 228 having a predetermined thickness is formed on an upper surface of the seed layer 227 positioned on both sides of the mold 230. The heat dissipation layer 228 may be formed by electroplating a metal having good thermal conductivity, such as nickel (Ni) or chromium (Cr), on the surface of the seed layer 227. The heat dissipation layer 228 functions to dissipate heat to the outside of the heater 242 and the surroundings thereof. That is, the heat remaining in the heater 242 and the surroundings after the ink is discharged is conducted to the substrate 220 and the heat dissipating layer 228 through the heat conductive layer 224 and is emitted to the outside. Therefore, since heat dissipation is made faster after the ink is discharged, stable printing is possible at a high driving frequency.

Next, referring to FIG. 12, when the mold 230 and the seed layer 227 below are sequentially etched, a nozzle 204 exposing the first protective layer 221 is formed.

Subsequently, referring to FIG. 13, a manifold 202 that exposes the post 270 is formed on the rear surface of the substrate 200. The manifold 202 functions to supply ink to the ink chamber (206 in FIG. 17A). Specifically, after patterning the oxide film 211 formed on the back of the substrate 200, using the Tetramethyl Ammonium Hydroxide (TMAH) solution as an etching solution to wet etching the back surface of the substrate 200 to a predetermined depth The manifold 202 is formed to expose the bottom surface of the post 270.

Next, referring to FIG. 14, when the post 270 exposed by the manifold 202 is removed by etching, at least one restrictor 208 is formed in a direction perpendicular to the surface of the substrate 200. do. An etch stop layer 260 is formed on the surface of the substrate 200 on which the manifold 202 and the restrictor 208 are formed. The etch stop layer 260 is used to improve the precision of the restrictor 208, and is formed of parylene, which is a kind of polymer, on the surface of the substrate 200 on which the manifold 202 and the restrictor 208 are formed. parylene).

15, the first protective layer 221 on the upper surface of the substrate 200 exposed through the nozzle 204 is removed by etching until the substrate 200 is exposed. Accordingly, the nozzle plate 220 formed by penetrating the nozzle 204 is provided on the substrate 200.

16, the surface of the substrate 200 exposed through the nozzle 204 formed on the nozzle plate 220 is etched to a predetermined depth to form an ink chamber 206 filled with ink to be discharged. . Specifically, the ink chamber 206 may be formed by isotropic dry etching the surface of the substrate 200 using XeF ₂ gas as an etching gas. In this case, the substrate 200 is etched until it reaches the etch stop wall 250 that forms the sidewall of the ink chamber 206.

Finally, referring to FIG. 17A, when the ink chamber 206 is removed through an ashing or oxygen plasma etching process such that the ink chamber 206 communicates with the restrictor 208, an inkjet printhead may be formed. Is completed. 17B is a schematic plan view showing the internal structure of the inkjet printhead thus completed.

While the preferred embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and equivalent other embodiments are possible. For example, the materials used to construct each element of the printhead in the present invention may use materials not illustrated. In addition, the method of laminating and forming each material is also merely illustrated, and various deposition methods and etching methods may be applied. In addition, the specific values exemplified in each step may be adjusted outside the exemplified ranges as long as the manufactured printhead can operate normally. In addition, the order of each step of the printhead manufacturing method of the present invention may be different from that illustrated. Therefore, the true technical protection scope of the present invention will be defined by the appended claims.

As described above, the manufacturing method of the inkjet printhead according to the present invention has the following effects.

First, it is possible to simplify the manufacturing process of the inkjet printhead by simultaneously forming an etch stop wall constituting the sidewall of the ink chamber and a post for forming a restrictor.

Secondly, trenches are formed on the substrate by a macroporous silicon etching process, and the trenches are filled with oxides by the oxidation process, thereby reducing the oxidation time, thereby reducing the time required for manufacturing the inkjet printhead. have.

Third, due to the formation of a reproducible restrictor, it is possible to manufacture an inkjet printhead with improved precision and uniformity.

Claims (28)

(A) forming a plurality of first trenches for forming at least one restrictor to a predetermined depth by etching the surface of the substrate, and a plurality of second trenches for forming an etch stop wall defining a size of the ink chamber; Forming to a depth shallower than the first trench; (B) forming at least one post made of oxide and the etch stop wall in a portion where the first trenches and the second trenches are located; (C) forming a nozzle plate having a nozzle formed on the substrate; (D) forming a manifold to expose the post on the back side of the substrate; (E) forming the restrictor by removing the post exposed through the manifold; And (F) forming the ink chamber in communication with the restrictor on the surface side of the substrate. The method of claim 1, The substrate is a method of manufacturing an inkjet printhead, characterized in that made of n-type silicon (n-type Si). The method of claim 2, In step (a), Forming a plurality of first grooves for forming the first trenches and a plurality of second grooves for forming the second trenches in a predetermined region of the substrate surface; Etching the first grooves to a predetermined depth perpendicular to the surface of the substrate to form a plurality of first upper trenches; And And etching the first upper trenches and the second grooves to a predetermined depth perpendicular to a surface of the substrate to form the first trenches and the second trenches, respectively. . The method of claim 3, wherein The first grooves and the second grooves are formed by forming a first etching mask on the surface of the substrate, and etching the surface of the substrate exposed through the first etching mask. . The method of claim 4, wherein And the first grooves and the second grooves are formed by etching the surface of the substrate using an alkaline solution such as KOH or TMAH as an etchant. The method of claim 4, wherein And the first grooves and the second grooves are formed in a pyramid shape. The method of claim 4, wherein The first upper trenches form a second etching mask to expose the first grooves on the first etching mask, and the bottom of the first grooves is perpendicular to the surface of the substrate using the second etching mask. The inkjet printhead manufacturing method, characterized in that formed by etching to a predetermined depth. The method of claim 7, wherein The first upper trenches are formed by a macro porous Si etching process. The method of claim 8, And the first upper trenches are formed by anisotropically etching the bottom of the first grooves to a predetermined depth using an HF solution as an etchant. The method of claim 7, wherein The first trenches and the second trenches remove the second etching mask and etch the bottom of the first upper trench and the second grooves exposed through the first etching mask to a predetermined depth perpendicular to the surface of the substrate. The inkjet printhead manufacturing method, characterized in that formed by. The method of claim 10, And the first trenches and the second trenches are formed by a macroporous silicon etching process. The method of claim 11, And the first trenches and the second trenches are formed by anisotropically etching the bottoms of the first upper trenches and the second grooves to a predetermined depth using an HF solution as an etchant. The method of claim 12, The first trench and the second trench is a manufacturing method of the inkjet printhead, characterized in that formed in a width of 0.1㎛ ~ 10㎛. The method of claim 13, The first trench and the second trench is a manufacturing method of the inkjet printhead, characterized in that formed in a width of 0.1㎛ ~ 1㎛. The method of claim 1, In the step (b), the post and the etch stop wall are formed by oxidizing the substrate around the first trenches and the second trenches. The method of claim 1, The (c) step, Sequentially stacking first, second, and third protective layers on the substrate, and forming a heater and a conductive wire connected to the heater between the protective layers; And And etching the second and third passivation layers to form the nozzles exposing the first passivation layer. The method of claim 16, And the first protective layer is made of a material different from the second and third protective layers. The method of claim 16, And forming a heat dissipation layer made of a metal on the third protective layer. The method of claim 18, And the heat dissipating layer is formed on the third passivation layer by electroplating. The method of claim 18, And a thermally conductive layer in contact with the substrate and the heat dissipating layer is formed between the protective layers. The method of claim 16, In the step (d), the manifold is formed by wet etching the back surface of the substrate to a predetermined depth. The method of claim 21, In the step (E), the restrictor is formed by etching the post exposed on the back side of the substrate until the first protective layer is exposed, characterized in that the inkjet printhead manufacturing method. The method of claim 22, The method of claim 1, wherein an etch stop layer is formed on a surface of the substrate on which the manifold and the restrictor are formed. The method of claim 23, The etch stop layer is formed by depositing parylene on the surface of the substrate on which the manifold and the restrictor are formed. The method of claim 23, The (bar) step, Removing the first protective layer exposed through the nozzle; Etching the surface side of the substrate exposed through the first protective layer to a predetermined depth to form the ink chamber; And Removing the etch stop layer; a method of manufacturing an inkjet printhead, comprising: a. The method of claim 25, And the etch stop wall forms a sidewall of the ink chamber. The method of claim 26, And the ink chamber is formed by isotropic etching the surface of the substrate exposed through the first protective layer using XeF ₂ gas as an etching gas. The method of claim 25, The anti-etching film is a method of manufacturing an inkjet printhead, characterized in that removed by an ashing (ash) or oxygen plasma etching process.

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