KR20060074503A - Rftouch sensor - Google Patents

Rftouch sensor Download PDF

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KR20060074503A
KR20060074503A KR1020040113256A KR20040113256A KR20060074503A KR 20060074503 A KR20060074503 A KR 20060074503A KR 1020040113256 A KR1020040113256 A KR 1020040113256A KR 20040113256 A KR20040113256 A KR 20040113256A KR 20060074503 A KR20060074503 A KR 20060074503A
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light
light receiving
proximity sensor
light emitting
reflecting
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KR1020040113256A
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Korean (ko)
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윤상덕
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동부일렉트로닉스 주식회사
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Priority to KR1020040113256A priority Critical patent/KR20060074503A/en
Publication of KR20060074503A publication Critical patent/KR20060074503A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/14—Measuring arrangements characterised by the use of optical techniques for measuring distance or clearance between spaced objects or spaced apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/125—Composite devices with photosensitive elements and electroluminescent elements within one single body
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

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  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
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Abstract

본 발명에 따른 근접 센서는, 표면에 철이 도금된 반사면을 구비하며, 반사면으로 빛을 반사시키는 수광부와, 수광부에 빛을 제공하며, 수광부의 반사면에서 반사된 빛의 량에 따라 온/오프 신호를 발생시키는 발광부를 포함하거나 빛을 수광하는 면이 오목한 형상을 갖고, 빛을 수광하는 면으로 빛을 반사시키는 수광부와, 수광부에 빛을 제공하며, 수광부에서 반사된 빛의 량에 따라 온/오프 신호를 발생시키는 발광부를 포함한다.Proximity sensor according to the present invention has a reflecting surface plated with iron on the surface, the light receiving unit for reflecting light to the reflecting surface, and provides light to the light receiving unit, depending on the amount of light reflected from the reflecting surface of the light receiving unit The light emitting part for generating the off signal or the light receiving surface has a concave shape, the light receiving portion for reflecting the light to the light receiving surface, the light receiving portion provides the light, depending on the amount of light reflected from the light receiving portion And a light emitting unit for generating an on / off signal.

이와 같이, 본 발명은 수광부에서 빛을 수광하는 면에 철을 도금시키거나 수광하는 면의 모양을 오목하게 만들어 발광부에서 발생되는 빛의 손실을 최소화시켜 발광부로 반사시킴으로서, 근접 센서의 오동작을 줄 일 수 있다.As such, the present invention minimizes the loss of light generated by the light emitting part by plating the iron or concave the shape of the light receiving part to reflect the light to the light emitting part, thereby reducing the malfunction of the proximity sensor. Can be.

근접 센서Proximity sensor

Description

근접 센서{RFTOUCH SENSOR}Proximity Sensor {RFTOUCH SENSOR}

도 1은 종래 기술에 의한 근접 센서의 구조를 도시한 도면이고,1 is a view showing the structure of a proximity sensor according to the prior art,

도 2는 본 발명의 일 실시 예에 따른 근접 센서의 구조를 도시한 도면이며,2 is a diagram illustrating a structure of a proximity sensor according to an embodiment of the present invention.

도 3은 본 발명의 다른 실시 예에 따른 근접 센서의 구조를 도시한 도면이고,3 is a view showing the structure of a proximity sensor according to another embodiment of the present invention,

본 발명은 근접 센서에 관한 것으로, 특히 발광부에서 발생되는 빛의 손실량을 줄여 발광부쪽으로 응집력을 높게 하기 위한 근접 센서에 관한 것이다.The present invention relates to a proximity sensor, and more particularly to a proximity sensor for increasing the cohesive force toward the light emitting portion by reducing the amount of light generated in the light emitting portion.

다수의 자동화 제조 프로세스에서, 제조 도구와 제품 또는 가공되는 재료 표면 간의 거리를 감지할 필요가 있다. 반도체 리소그래피와 같은 일부 상황에서는 나노미터에 가까운 정확도로 거리가 측정되어야만 한다.In many automated manufacturing processes, it is necessary to detect the distance between the manufacturing tool and the surface of the product or material being processed. In some situations, such as semiconductor lithography, distances must be measured with accuracy close to nanometers.

특히, 포토리소그래피 시스템과 관련하여, 이러한 정밀도를 갖는 근접 센서의 제조에 관한 도전은 중요하다. 포토리소그래피와 관련하여, 근접센서는 방해가 되지 않고 매우 짧은 거리를 정확하게 검출하는 능력을 갖는 것에 더하여, 오염 물질을 도입하거나 일반적으로 반도체 웨이퍼와 같은 가공 표면과 접촉해서는 안 된 다. 이러한 상황이 발생하면, 반도체 품질은 현저하게 저하 또는 손상될 수 있다.In particular, with respect to photolithography systems, the challenge regarding the manufacture of proximity sensors with this precision is important. In the context of photolithography, proximity sensors should not introduce contaminants or come into contact with processing surfaces, such as semiconductor wafers, in addition to having the ability to accurately detect very short distances without interference. When this situation occurs, the semiconductor quality can be significantly degraded or damaged.

매우 짧은 거리를 측정하기 위하여 다양한 유형의 근접 센서가 이용 가능하다. 근접 센서의 예로는 정전 용량 및 광학 게이지가 있다. Various types of proximity sensors are available for measuring very short distances. Examples of proximity sensors are capacitance and optical gauges.

일반적인 근접 센서의 구조에 대한 설명은 도 1을 참조하여 설명한다. 도 1은 일반적인 근접 센서의 구조를 도시한 도면이다.The structure of the general proximity sensor will be described with reference to FIG. 1. 1 is a diagram illustrating a structure of a general proximity sensor.

도 1을 참조하면, 근접 센서는 빛을 발광하는 발광부(10) 및 발광부(10)에서 발생된 빛의 일부를 발광부(10)에 다시 반사시키는 수광부(12)로 구성된다. 여기서 발광부(10)는 수광부(12)에서 반사되어 입사되는 빛의 양에 따라 온/오프 신호를 발생하게 된다.Referring to FIG. 1, the proximity sensor includes a light emitter 10 that emits light and a light receiver 12 that reflects a part of the light generated by the light emitter 10 back to the light emitter 10. Here, the light emitter 10 generates an on / off signal according to the amount of light reflected by the light receiver 12 and incident.

그러나, 일반적으로 수광부(12)의 표면은 크롬(Cr)으로 되어 있어 발광부(10)에서 빛을 보내주게 되면 대략 15%의 손실이 발생되기 때문에 근접 센서가 오동작을 하고 에러를 발생시키는 문제점이 있다.However, in general, the surface of the light receiving unit 12 is made of chromium (Cr), so when the light is emitted from the light emitting unit 10, approximately 15% of loss occurs, which causes the proximity sensor to malfunction and generate an error. have.

또한, 수광부(12)의 표면은 평면으로 되어 있기 때문에 발광부(10)에서 빛을 보내주게 되면 수광부(12)의 표면을 맞고 다른 곳으로 반사되기 때문에 손실되는 빛의 양이 많은 단점이 있다.In addition, since the surface of the light receiving unit 12 is planar, when the light is emitted from the light emitting unit 10, the amount of light is lost because it hits the surface of the light receiving unit 12 and is reflected to another place.

본 발명의 목적은 이와 같은 종래 기술의 문제점을 해결하기 위한 것으로, 표면을 철로 도금하여 발광부로부터 빛을 받게 되면 빛의 손실량을 줄여 발광부쪽으로 응집력을 높게함으로서, 근접 센서 오동작 및 에러 발생을 최소화시킬 수 있는 근접 센서를 제공하고자 한다. An object of the present invention is to solve the problems of the prior art, by plating the surface with iron to receive light from the light emitting unit to reduce the loss of light to increase the cohesion toward the light emitting unit, thereby minimizing proximity sensor malfunction and error occurrence To provide a proximity sensor that can be made.                         

본 발명의 다른 목적은, 발광부에서 발생된 빛을 수광하는 수광면을 오목하게 하여 발광부로부터 빛을 받게 되면 빛의 손실량을 줄여 발광부쪽으로 응집력을 높게함으로서, 근접 센서 오동작 및 에러 발생을 최소화시킬 수 있는 근접 센서를 제공하고자 한다.Another object of the present invention is to concave the light-receiving surface for receiving the light generated in the light emitting unit to reduce the amount of light when receiving light from the light emitting unit to increase the cohesive force toward the light emitting unit, thereby minimizing proximity sensor malfunction and error occurrence To provide a proximity sensor that can be made.

상기와 같은 본 발명의 목적을 달성하기 위한 본 발명은, 표면에 철이 도금된 반사면을 구비하며, 상기 반사면으로 빛을 반사시키는 수광부와, 상기 수광부에 빛을 제공하며, 상기 수광부의 반사면에서 반사된 빛의 량에 따라 온/오프 신호를 발생시키는 발광부를 포함한다.The present invention for achieving the object of the present invention as described above, has a reflecting surface plated with iron on the surface, the light receiving portion for reflecting light to the reflecting surface, providing light to the light receiving portion, the reflecting surface of the light receiving portion It includes a light emitting unit for generating an on / off signal in accordance with the amount of reflected light.

본 발명의 다른 목적을 달성하기 위하여 본 발명은, 빛을 수광하는 면이 오목한 형상을 갖고, 상기 빛을 수광하는 면으로 빛을 반사시키는 수광부와, 상기 수광부에 빛을 제공하며, 상기 수광부에서 반사된 빛의 량에 따라 온/오프 신호를 발생시키는 발광부를 포함한다.In order to achieve the other object of the present invention, the present invention, the light receiving surface has a concave shape, the light receiving portion for reflecting the light to the light receiving surface, and the light receiving portion, the light receiving portion, and reflected from the light receiving portion It includes a light emitting unit for generating an on / off signal in accordance with the amount of light.

이하, 첨부된 도면을 참조하여 본 발명에 따른 바람직한 실시 예에 대하여 상세히 설명하기로 한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

도 2는 본 발명의 일 실시 예에 따른 근접 센서의 구조를 도시한 도면이다.2 is a diagram illustrating a structure of a proximity sensor according to an exemplary embodiment of the present invention.

도 2에 도시된 바와 같이, 근접 센서는 표면에 철이 도금된 반사면(210a)을 구비하며, 반사면으로 빛을 반사시키는 수광부(210)와, 수광부(210)에 빛을 제공하며, 수광부(210)의 반사면(210a)에서 반사된 빛의 량에 따라 온/오프 신호를 발생시키는 발광부(200)를 포함하여 구성된다. As shown in FIG. 2, the proximity sensor includes a reflecting surface 210a coated with iron on a surface thereof, the light receiving unit 210 reflecting light to the reflecting surface, and provides light to the light receiving unit 210. The light emitting unit 200 generates an on / off signal according to the amount of light reflected from the reflecting surface 210a of the 210.                     

수광부(210)의 표면은 크롬(Cr)으로 도금되어 있으며, 반사면(210a)은 발광부에서 발생된 빛을 수광하는 면으로 2mm 정도의 두께로 철이 도금되어 있다. 이러한 반사면(210a)은 발광부(200)에서 발생되는 빛의 응집력을 향상시켜 근접 센서의 오동작을 줄 일 수 있다. 즉, 발광부(200)에서 발생된 빛은 손실 없이 철로 도금된 반사면(210a)으로 반사되어 발광부(200)에 피드백되고, 발광부(200)에서는 빛의 양에 따라 온 또는 오프 신호를 발생하게 된다.The surface of the light receiving unit 210 is plated with chromium (Cr), and the reflecting surface 210a is a surface for receiving light generated from the light emitting unit, and is plated with a thickness of about 2 mm. The reflective surface 210a may reduce the malfunction of the proximity sensor by improving the cohesion of light generated from the light emitting unit 200. That is, the light generated from the light emitting unit 200 is reflected back to the light emitting unit 200 by the reflection surface 210a plated with iron without any loss, and the light emitting unit 200 generates an on or off signal according to the amount of light. Will occur.

상기에서는 본 발명의 일 실시 예로서 수광부(210)에 철을 도금하여 근접 센서의 오동작을 줄이는 것을 예로 들었지만, 본 발명의 다른 실시 예로서 수광부의 모양을 변경시켜 발광부에서 발생된 빛의 응집력을 향상시킬 수 있다.In the above, as an example of reducing the malfunction of the proximity sensor by plating iron on the light receiving unit 210 as an embodiment of the present invention, in another embodiment of the present invention by changing the shape of the light receiving unit to change the cohesion of light generated in the light emitting unit Can be improved.

이하, 첨부된 도 3을 참조하여 설명한다. 도 3은 본 발명의 다른 실시 예에 따른 근접 센서의 구조를 도시한 도면이다.Hereinafter, with reference to the accompanying Figure 3 will be described. 3 is a diagram illustrating a structure of a proximity sensor according to another exemplary embodiment of the present invention.

도 3에 도시된 바와 같이, 근접 센서는 빛을 수광하는 면이 오목한 형상을 갖고, 빛을 수광하는 면으로 빛을 반사시키는 수광부(310)와, 수광부(310)에 빛을 제공하며, 수광부(310)의 반사된 빛의 량에 따라 온/오프 신호를 발생시키는 발광부(300)를 포함하여 구성된다.As shown in FIG. 3, the proximity sensor has a concave shape in which the light receiving surface has a concave shape, and provides light to the light receiving portion 310 and the light receiving portion 310 to reflect the light to the light receiving surface. It includes a light emitting unit 300 for generating an on / off signal in accordance with the amount of reflected light of the 310.

수광부(310)의 표면은 크롬(Cr)으로 도금되어 있으며, 발광부(300)로부터 빛을 입사받는 면이 오목한 모양을 갖고 있기 때문에 발광부(300)에서 발생되는 빛의 응집력을 향상시켜 근접 센서의 오동작을 줄 일 수 있다. 즉, 발광부(300)에서 발생된 빛은 수광부(310)의 오목한 부분에 입사되어 반사되기 때문에 다른 곳으로 반사되는 빛의 양이 최소화되어 발광부(300)로 피드백되고, 발광부(300)에서는 빛의 양에 따라 온 또는 오프 신호를 발생하게 된다.The surface of the light receiving unit 310 is plated with chromium (Cr), and since the surface receiving the light from the light emitting unit 300 has a concave shape, it improves the cohesive force of the light generated by the light emitting unit 300 and thus the proximity sensor. It can reduce the malfunction of. That is, since the light generated by the light emitting unit 300 is incident and reflected on the concave portion of the light receiving unit 310, the amount of light reflected to another place is minimized and fed back to the light emitting unit 300, and the light emitting unit 300 is provided. In On, it generates on or off signal according to the amount of light.

이상 설명한 바와 같이, 본 발명은 수광부에서 빛을 수광하는 면에 철을 도금시키거나 수광하는 면의 모양을 오목하게 만들어 발광부에서 발생되는 빛의 손실을 최소화시켜 발광부로 반사시킴으로서, 근접 센서의 오동작을 줄 일 수 있다.As described above, the present invention, by plating the light receiving surface in the light receiving portion or concave the shape of the light receiving surface to minimize the loss of light generated in the light emitting portion to reflect the light emitting portion, malfunction of the proximity sensor Can be reduced.

한편, 본 발명은 상술한 실시예에 국한되는 것이 아니라 후술되는 청구범위에 기재된 본 발명의 기술적 사상과 범주내에서 당업자에 의해 여러 가지 변형이 가능하다.On the other hand, the present invention is not limited to the above-described embodiment, various modifications are possible by those skilled in the art within the spirit and scope of the present invention described in the claims to be described later.

Claims (4)

표면에 철이 도금된 반사면을 구비하며, 상기 반사면으로 빛을 반사시키는 수광부와,A light receiving unit having a reflecting surface plated with iron on the surface and reflecting light to the reflecting surface; 상기 수광부에 빛을 제공하며, 상기 수광부의 반사면에서 반사된 빛의 량에 따라 온/오프 신호를 발생시키는 발광부The light emitting unit provides light to the light receiving unit and generates an on / off signal according to the amount of light reflected from the reflecting surface of the light receiving unit. 를 포함하는 근섭 센서.Emission sensor comprising a. 제 1 항에 있어서,The method of claim 1, 상기 수광부의 반사면은, 상기 발광부에서 발생된 빛을 수광하는 면으로 철이 도금되어 있는 것을 특징으로 하는 근접 센서.The reflection surface of the light receiving portion is a proximity sensor, characterized in that the iron plated to the surface for receiving the light generated by the light emitting portion. 제 1 항 또는 제 2 항에 있어서,The method according to claim 1 or 2, 상기 반사면의 두께는, 2mm인 것을 특징으로 하는 근접 센서.The proximity sensor has a thickness of 2 mm. 빛을 수광하는 면이 오목한 형상을 갖고, 상기 빛을 수광하는 면으로 빛을 반사시키는 수광부와,A light-receiving unit having a concave shape in which the light receiving surface is concave, and reflecting light to the light receiving surface 상기 수광부에 빛을 제공하며, 상기 수광부에서 반사된 빛의 량에 따라 온/오프 신호를 발생시키는 발광부The light emitting unit provides light to the light receiving unit and generates an on / off signal according to the amount of light reflected from the light receiving unit. 를 포함하는 근섭 센서.Emission sensor comprising a.
KR1020040113256A 2004-12-27 2004-12-27 Rftouch sensor KR20060074503A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9921310B2 (en) 2012-09-26 2018-03-20 Samsung Electronics Co., Ltd. Proximity sensor and proximity sensing method using event-based vision sensor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9921310B2 (en) 2012-09-26 2018-03-20 Samsung Electronics Co., Ltd. Proximity sensor and proximity sensing method using event-based vision sensor

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