KR20060067288A - Manufacturing mathod of thin film transistor array panel - Google Patents

Abstract

Forming a gate line on the substrate, forming a data line insulated from and intersecting the gate line, forming a thin film transistor connected to the gate line and the data line, forming a first passivation layer on the thin film transistor, and a first passivation layer Forming a color filter by a transfer method using a transfer film, forming a second passivation layer on the color filter, and forming a pixel electrode including a reflective electrode and a transparent electrode on the second passivation layer and connected to the thin film transistor; Include.

Color Filter, Transfer, Thin Film Transistor

Description

Manufacturing method of thin film transistor array panel {MANUFACTURING MATHOD OF THIN FILM TRANSISTOR ARRAY PANEL}

1 is a layout view of a transflective liquid crystal display according to an exemplary embodiment of the present invention.

FIG. 2 is a cross-sectional view of the liquid crystal display of FIG. 1 taken along the line II-II '. FIG.

3A is a layout view at an intermediate stage of a method of manufacturing a thin film transistor array panel according to an exemplary embodiment of the present invention.

FIG. 3B is a cross-sectional view taken along the line IIIb-IIIb ′ of FIG. 3A.

4A is a layout view at the next step of FIG. 3A.

4B is a cross-sectional view taken along the line IVb-IVb ′ of FIG. 4A.

FIG. 5A is a layout view at the next step of FIG. 4A.

FIG. 5B is a cross-sectional view taken along the line Vb-Vb ′ of FIG. 5a.

FIG. 6A is a layout view at the next step of FIG. 5A.

FIG. 6B is a cross-sectional view taken along the line VIb-IVb ′ of FIG. 6A.

7A to 7C are views for explaining a transfer method according to an embodiment of the present invention.

8A is a layout view at the next step of FIG. 6A.

FIG. 8B is a cross-sectional view taken along the line VIIIb-VIIIb ′ of FIG. 8A.                 

* Description of symbols on the main parts of the drawings *

110, 210: substrate 121: gate line

154: semiconductor layer 171: data line

190: pixel electrode 230R, 230G, 230B: color filter

270 common electrode

The present invention relates to a method for manufacturing a thin film transistor array panel, and more particularly, to a liquid crystal display device including a color filter.

Liquid crystal display (LCD) is one of the most widely used flat panel display devices. Currently, two display panels are provided with a field generating electrode and a polarizer and the liquid crystal contained therebetween. Layer.

The liquid crystal molecules of the liquid crystal layer change their orientation according to the electric field generated in the liquid crystal layer due to the voltage applied to the field generating electrode, and thus the polarization of the light passing through the liquid crystal layer changes, and the polarizing plate emits the light polarization. Convert to transmittance of. Accordingly, the liquid crystal display may display a desired image by adjusting the voltage applied to the field generating electrode. In this case, the transmittance of light is determined by phase retardation caused by birefringence of the liquid crystal layer, and the phase retardation is a product of the refractive anisotropy of the liquid crystal layer and the distance between the two display panels. Given by

Among the liquid crystal display devices, one of the two display panels currently used includes a plurality of pixel electrodes, which are a kind of field generating electrodes, and a thin film transistor (TFT) for switching a voltage applied to the pixel electrodes. The other is a liquid crystal display provided with a common electrode and a color filter, which are different types of field generating electrodes. However, the color filter of the liquid crystal display may be formed together with the thin film transistor to achieve high opening ratio.

Since the liquid crystal display is a light-receiving display device that does not emit light by itself, the light emitted from a backlight lamp provided at the rear of the liquid crystal display passes through the liquid crystal layer or receives light from outside such as natural light. The image is displayed by passing the liquid crystal layer and then reflecting the liquid crystal layer. The former case is called a transmission liquid crystal display device, and the latter case is called a reflective liquid crystal display device.

Recently, transflective or transflective liquid crystal display devices, which use backlights or use external light depending on the environment, have been developed and mainly used in small and medium sized display devices.

In the transflective liquid crystal display, each pixel has a transmissive region and a reflective region. In the transmissive region, the light passes through the liquid crystal layer only once and twice in the reflective region, so that the phase delay of the light passing through the two regions is the same. In order to achieve this, the thickness of the liquid crystal layer, that is, the cell gap of the transmission region and the reflection region is changed.

In the transflective liquid crystal display, a method of changing the thickness of the color filter in the two regions by using photolithography or the like is mainly used to change the cell spacing between the transmissive and reflective regions. The problem is that the process is complex and expensive.

SUMMARY OF THE INVENTION The present invention has been made in an effort to provide a method of manufacturing a thin film transistor array panel for a liquid crystal display, in which color filters having different thicknesses may be easily formed together with a thin film transistor.

In order to achieve this technical problem, the present invention forms a color filter by a transfer method.

Specifically, forming a gate line on a substrate, forming a data line insulated from and intersecting the gate line, forming a thin film transistor connected to the gate line and the data line, and forming a first passivation layer on the thin film transistor. Forming a color filter on the first passivation layer by a transfer method using a transfer film, forming a second passivation layer on the color filter, a pixel electrode including a reflective electrode and a transparent electrode on the second passivation layer and connected to the thin film transistor; Forming a step.

The color filter of the portion corresponding to the reflective electrode is preferably formed thinner than the color filter of the portion corresponding to the transparent electrode.

The forming of the color filter may include forming the first color filter by a transfer method using a transfer film, and forming the second color filter by a transfer method using the same transfer film as the transfer film in a predetermined region of the first color filter. It is preferred to include the step.

The thin film transistor may further include forming a gate electrode connected to the gate line, forming a semiconductor layer overlapping the gate electrode, forming a source electrode overlapping the semiconductor layer and connected to the data line, and overlapping the semiconductor layer. It is preferable to include forming a drain electrode corresponding to the source electrode around the gate electrode.

In addition, after the forming of the second passivation layer, the method may further include forming a contact hole exposing the drain electrode in the second passivation layer, and the pixel electrode may be connected to the drain electrode through the contact hole.

Further, in the forming of the contact hole, it is preferable to include the step of removing the upper portion of the second protective film of the portion corresponding to the transparent electrode.

In addition, the transfer method comprises the steps of preparing a transfer film comprising a colored layer, aligning the colored layer of the transfer film to the upper portion of the first protective film, the step of bringing the colored layer in close contact with the upper portion of the first protective film using a roll, And exposing the colored layer using a photomask and then developing the colored layer.

DETAILED DESCRIPTION Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention.

In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. Like parts are designated by like reference numerals throughout the specification. When a part of a layer, film, area, plate, etc. is over another part, this includes not only the part directly above the other part but also another part in the middle. On the contrary, when a part is just above another part, it means that there is no other part in the middle.

Hereinafter, a method of manufacturing a color filter display panel according to an exemplary embodiment of the present invention will be described with reference to the accompanying drawings.

First, the structure of a liquid crystal display according to an exemplary embodiment of the present invention will be described in detail with reference to FIGS. 1 and 2.

1 is a layout view of a transflective liquid crystal display according to an exemplary embodiment of the present invention, and FIG. 2 is a cross-sectional view of the liquid crystal display of FIG. 1 taken along the line II-II ′.

1 and 2, a liquid crystal display according to an exemplary embodiment of the present invention includes a thin film transistor array panel 100 and an opposing display panel 200 facing each other with a gap therebetween, and two display panels 100 and 200. A columnar spacer (310) disposed between the columns and supporting the gap, and a liquid crystal layer (300) filled in the gap between the two display panels (100, 200). The substrate spacer 310 may be formed of an organic insulating material, and is formed through a photo process. The columnar substrate spacer 310 may be replaced with a spherical or ellipsoidal substrate spacer disposed between the two display panels 100 and 200 in a scattering manner. The liquid crystal display may further include a backlight unit (not shown) positioned at an outer front or side of the thin film transistor array panel 100.

First, the thin film transistor array panel 100 will be described. A plurality of gate lines 121 are formed on the insulating substrate 110 such as transparent glass to transfer gate signals. Each gate line 121 mainly extends in a horizontal direction and includes a plurality of gate electrodes 124 and a plurality of projections 127 protruding downward. When a gate driving circuit (not shown) generating a gate signal is integrated on the substrate 110, the gate line 121 is a gate line when a circuit (not shown) of the gate driving circuit is integrated on the substrate 110. The 121 may be directly connected to the gate driving circuit. Alternatively, when the gate driving circuit is mounted on a flexible printed circuit film mounted on the substrate 110 or directly mounted on the substrate 110, the gate driving circuit 120 may be directly connected to the gate driving circuit. The gate line 121 may include an end portion (not shown) having a large area for connection with the gate driving circuit.

The gate line 121 may be formed of aluminum-based metal such as aluminum (Al) or aluminum alloy, silver-based metal such as silver (Ag) or silver alloy, copper-based metal such as copper (Cu) or copper alloy, molybdenum (Mo) or molybdenum It may be made of molybdenum-based metals such as alloys, chromium (Cr), tantalum (Ta), and titanium (Ti). However, in order to reduce the signal delay or voltage drop of the gate line 121 and the electrode pole 131, a low resistivity metal, for example, an aluminum-based metal, a silver-based metal, or a copper-based metal, may be used. Can be. The other conductive layer may be made of a material having excellent contact properties with other materials, particularly indium tin oxide (ITO) and indium zinc oxide (IZO), such as molybdenum-based metal, chromium, tantalum, or titanium. A good example of such a combination is a chromium bottom film and an aluminum top film, and an aluminum bottom film and a molybdenum top film.

Side surfaces of the gate line 121 and the storage electrode line 131 are inclined with respect to the surface of the substrate 110, and the inclination angle thereof is preferably about 30 to 80 degrees.

A gate insulating layer 140 made of silicon nitride (SiNx) is formed on the gate line 121.

A plurality of linear semiconductors 151 made of hydrogenated amorphous silicon (a-Si), polycrystalline silicon, or the like are formed on the gate insulating layer 140. The linear semiconductor 151 extends mainly in the longitudinal direction from which a plurality of projections 154 extend toward the gate electrode 124. In addition, the linear semiconductor 151 may increase in width near the point where the linear semiconductor 151 meets the gate line 121 to cover a large area of the gate line 121.

A plurality of linear and island ohmic contacts 161 and 165 made of a material such as N + hydrogenated amorphous silicon doped with silicide or n-type impurities at a high concentration are formed on the semiconductor 151. The linear ohmic contact 161 has a plurality of protrusions 163, and the protrusion 163 and the island-type ohmic contact 165 are paired and positioned on the protrusion 154 of the semiconductor 151.

Side surfaces of the semiconductor 151 and the ohmic contacts 161 and 165 are also inclined, and the inclination angle is preferably about 30-80 ° with respect to the substrate 110.

The plurality of data lines 171, the plurality of drain electrodes 175, and the plurality of storage capacitor conductors are formed on the ohmic contacts 161 and 165 and the gate insulating layer 140. 177 is formed.

The data line 171 mainly extends in the vertical direction to cross the gate line 121 and transmit a data voltage. Each data line 171 has a wide end portion for connecting a plurality of source electrodes 173 extending toward the gate electrode 124 with another layer or an external device.

The pair of source electrode 173 and the drain electrode 175 are separated from each other and positioned opposite to each other with respect to the gate electrode 124. The gate electrode 124, the source electrode 173, and the drain electrode 175 form a thin film transistor (TFT) together with the protrusion 154 of the semiconductor 151, and the channel of the thin film transistor is a source. A protrusion 154 is formed between the electrode 173 and the drain electrode 175.

The data line 171, the drain electrode 175, and the conductor 177 for the storage capacitor are preferably made of a refractory metal such as molybdenum, chromium, tantalum, titanium, or an alloy thereof. However, these may also have a multilayer film structure including a conductive film having a low resistance and a conductive film having good contact characteristics. Examples of the multilayer film structure include a triple film of molybdenum film, aluminum film, and molybdenum film in addition to the above-described double film of chromium lower film and aluminum upper film or aluminum lower film and molybdenum upper film.

Similarly to the gate line 121, the data line 171 and the drain electrode 175 are inclined at an angle of about 30 to 80 ° with respect to the substrate 110.

The ohmic contacts 161 and 165 exist only between the semiconductor 151 below and the data line 171 and the drain electrode 175 above and serve to lower the contact resistance. The linear semiconductor 151 has a portion exposed between the source electrode 173 and the drain electrode 175 and not covered by the data line 171 and the drain electrode 175. The linear semiconductor 151 also has a width of the linear semiconductor 151 smaller than that of the data line 171 in most places, but as described above, the width of the linear semiconductor 151 is increased to improve the surface profile. Disconnection of the data line 171 can be prevented.

The first passivation layer 180a is formed on the data line 171, the drain electrode 175, the storage capacitor conductor 177, and the exposed semiconductor 154. The protective film is a low dielectric constant insulating material having a dielectric constant of 4.0 or less, such as a-Si: C: O, a-Si: O: F, formed by plasma enhanced chemical vapor deposition (PECVD), or an inorganic material such as silicon nitride. It may be done.

A plurality of color filters 230R, 230G, and 230B are formed on the first passivation layer 180a. The color filters 230R, 230G, and 230B face the pixel electrode 190 and have a band shape extending in the vertical direction. The color filter has a relatively thick portion and a thin portion depending on the position.

A second passivation layer 180b is formed on the first passivation layer 180a to cover the color filters 230R, 230G, and 230B. The second passivation layer 180b is made of an organic material having excellent planarization characteristics. In addition, embossing is formed on the surface of the passivation layer 180b, and may be made of only a photo process using a material having photosensitivity.

A plurality of contact holes 182 and 185 exposing at least one end of the data line 171 and at least a portion of the drain electrode 175 are provided.

On the other hand, a plurality of contact holes (not shown) for connecting the end portion of the gate line 121 with another layer or an external driving circuit penetrate the gate insulating layer 140 and the passivation layer 180 to form the gate line 121. Can reveal the end of

A plurality of transparent electrodes 191 and a plurality of contact assistants 82 made of a transparent conductive material such as ITO or IZO are formed on the passivation layer 180, and each transparent electrode 191 is formed on the passivation layer 180. A reflective electrode 192 made of an opaque reflective metal such as an aluminum-based metal, a silver-based metal, or a silver-based metal is formed thereon. The reflective electrode 192 has a transmission window 196 exposing the transparent electrode 191, and the transmission window 196 may be formed at various positions in various shapes. The pair of transparent electrodes 191 and the reflective electrode 192 will be referred to as a pixel electrode 190.

The portion of the color filter 230R, 230G, and 230B corresponding to one pixel electrode 190 corresponds to the thick portion 232 and the reflective electrode 192 corresponding to the transmission window 196 of the pixel electrode 190. Thin portion 231.

The pixel electrode 190 is electrically connected to the drain electrode 175 through the contact hole 185, and connected to the conductor 177 for the storage capacitor through the contact hole 187, thereby providing a data voltage from the drain electrode 175. Is applied and transfers the data voltage to the conductor 177 for the storage capacitor.

The pixel electrode 190 to which the data voltage is applied generates an electric field together with the common electrode 270 of the opposing display panel 200 to which the common voltage is applied, thereby generating liquid crystal molecules of the liquid crystal layer 300 between the two electrodes. 3) Determine the direction of these.

In addition, the pixel electrode 190 and the common electrode 270 form a capacitor (hereinafter, referred to as a "liquid crystal capacitor") to place another capacitor even after the thin film transistor is turned off, which is called a storage capacitor. do. The storage capacitor is formed by the superposition of the pixel electrode 190 and the neighboring gate line 121 (which is called a “previous gate line”), and the like. In order to increase the overlapped area by providing the protrusion 127 extending the gate line 121, the conductive layer conductor 177 connected to the pixel electrode 190 and overlapped with the protrusion 127 may be protected. Place it underneath to bring the distance between the two closer.

The pixel electrode 190 also overlaps the neighboring gate line 121 and the data line 171 to increase the aperture ratio, but this is optional.

The contact auxiliary member 81 is connected to the exposed end of the data line 171 through the contact hole 182. The contact assistant 82 serves to protect adhesion between the end of the data line 181 and the external device.

Finally, an alignment layer 11 is formed on the pixel electrode 190, the contact auxiliary member 82, and the passivation layer 180.

Next, the color filter display panel 200 will be described.

On the insulating substrate 210 made of transparent glass or the like, a common electrode 270 made of transparent conductors such as ITO and IZO is formed, and an alignment layer 21 is formed thereon.

In such a liquid crystal display, a region occupied by the transmission window 196 of the entire region occupied by the pixel electrode 190 is called a “transmissive area” TA, and a region occupied by the reflective electrode 192 is “ Reflective area ”(RA).

In the transmission area TA, since the pixel electrode 190 is formed of only the transparent electrode 191, light may be transmitted. Therefore, in the transmission area TA, an image is mainly displayed by using light from a lamp (not shown) of the backlight device. That is, the light emitted from the lamp passes through the liquid crystal layer 300 and the color filters 230R, 230G, and 230B once to display an image.

On the other hand, in the reflective region RA, since the pixel electrode 190 includes the opaque reflective electrode 192, the light emitted from the lamp of the backlight device is reflected by the reflective electrode 192 and thus does not enter the liquid crystal layer 300. Since light incident from the filter display panel 200 is reflected by the reflective electrode 192 and exits again, the image is mainly displayed using external light. In this region, light from outside meets the color filters 230R, 230G, 230B and the liquid crystal layer 300 once, and is reflected by the reflective electrode 192 until the light enters from the outside and reaches the reflective electrode 192. When going out, the liquid crystal layer 300 and the color filters 230R, 230G, and 230B meet once more. Therefore, the light emitted from the reflection area RA not only experiences the phase delay by the liquid crystal layer 300 twice but also the phase is reversed by the reflection electrode 192.

As described above, since the thicknesses of the color filters 230R, 230G and 230B in the transmission area TA are smaller than the thicknesses of the color filters 230R, 230G and 230B in the reflection area RA, the liquid crystal layer 200 may be formed. The thickness is thicker in the transmissive area TA than in the reflective area RA. The second passivation layer 180a is formed thicker in the reflection area RA and thinner in the transmission area TA as opposed to the color filter. In addition, if the thickness ratios of the second passivation layer 180a and the color filters 230R, 230G, and 230B in the transmission area TA and the reflection area RA are properly adjusted, the phase retardation of light in the two areas TA and RA is almost reduced. Since it can be made the same, the color reproducibility can be made uniform in the two areas TA and RA, thereby improving the display characteristics of the liquid crystal display.

Next, a method of manufacturing the thin film transistor array panel for the liquid crystal display device illustrated in FIGS. 1 and 2 will be described with reference to FIGS. 3A to 8B.

FIG. 3A is a layout view at an intermediate stage of a method of manufacturing a thin film transistor array panel according to an exemplary embodiment of the present invention, FIG. 3B is a cross-sectional view taken along the line IIIb-IIIb ′ of FIG. 3A, and FIG. 4A is at a next stage of FIG. 3A. 4B is a sectional view taken along the line IVb-IVb 'of FIG. 4A, FIG. 5A is a layout view at the next step of FIG. 4A, FIG. 5B is a sectional view taken along the line Vb-Vb' of FIG. 5A, FIG. 6A is a layout view at a next stage of FIG. 5A, FIG. 6B is a cross-sectional view taken along the line VIb-IVb ′ of FIG. 6A, and FIGS. 7A to 7C are views for explaining a transfer method according to an exemplary embodiment of the present invention. 8A is a layout view of the next step of FIG. 6A, and FIG. 8B is a cross-sectional view taken along the line VIIIb-VIIIb ′ of FIG. 8A.

First, as illustrated in FIGS. 3A and 3B, a conductive film is laminated in a single layer or a plurality of layers on an insulating substrate 110 made of transparent glass, such as sputtering, and then the plurality of gate electrodes 124 by a photolithography process. And a gate line 121 including a plurality of expansion parts 127.

Next, as shown in FIGS. 4A and 4B, three layers of the gate insulating layer 140, the intrinsic amorphous silicon, and the impurity amorphous silicon layer are successively covered to cover the gate line 121. The impurity amorphous silicon layer and the intrinsic amorphous silicon layer are photo-etched to form a linear intrinsic semiconductor 151 each including a plurality of linear impurity semiconductors 164 and a plurality of protrusions 154.

Subsequently, as shown in FIGS. 5A and 5B, the metal film is laminated in a single layer or a plurality of layers by sputtering or the like, and then patterned to form a data line 171, a drain electrode 175, and a storage capacitor conductor 177. To form.

The data line 171, the drain electrode 175, and the storage capacitor conductor (with the photoresist film on the data line 171, the drain electrode 175, and the storage capacitor conductor 177 removed or left unchanged). While removing the impurity semiconductor 164 that is not covered by 177, the plurality of linear ohmic contacts 161 and the plurality of island type ohmic contacts 165 each including a plurality of protrusions 163 are completed. The portion of the intrinsic semiconductor 154 beneath it is exposed. Subsequently, in order to stabilize the surface of the portion of the intrinsic semiconductor 151, it is preferable to carry out an oxygen plasma.

Next, as shown in FIGS. 6A and 6B, the first protective layer 180a is formed by stacking silicon nitride on the insulating substrate 110, and then the red, green, and blue filters 230R are transferred by a transfer method using a transfer film. , 230G, 230B).

A method of forming the color filter will be described in more detail with reference to FIGS. 7A to 7C.

First, as shown in FIG. 7A, a transfer film including a cover film (not shown), a coloring layer 14, a cushion layer 16, and a base film 18 is shown. The film 30 is prepared. At this time, the substrate 110 is heated to 100 ~ 110 ℃ and the roller 20 is heated to 120 ~ 140 ℃. At this time, the substrate 10 is a substrate that proceeded to the steps of FIGS. 6A and 6B, and the colored layer 14 is red.

Next, after removing the overcoat 12 of the prepared transfer film 30, the colored layer 14 is placed on the substrate 10, and then the transfer film is completely adhered to the substrate 10 using the roller 20. . In this case, the cushion layer 16 is liquefied by heat, and the liquefied cushion layer 16 flows into a portion where the roller 20 does not touch, thereby helping the colored layer 14 to be in close contact with the lower layer.                     

An oxygen barrier layer may be further included between the colored layer 14 and the cushion layer 16. The oxygen barrier layer blocks the inflow of external oxygen, increases the strength of the membrane, increases the residual film ratio during the process, and smoothes the surface. .

As illustrated in FIG. 7B, the transfer film 30 is exposed through a photomask MP and then developed to form a thin first color filter 231R. Thereafter, the base layer 18 and the cushion layer 16 are removed. If an oxygen barrier layer is included, it is removed together.

Next, as shown in FIG. 7C, the second color filter 232 is formed in a predetermined region of the first color filter 231 by the same method as the first color filter 231 using the transfer film having the same colored layer. do. Here, the transfer film 30 is formed in the same manner with the same color layer 14 as when the first color filter 231 is formed, but the thickness of the color layer 14 is not the same, and the optical mask for exposure is also different. . That is, the photomask is patterned such that the colored layer 14 remains only in the transmissive region.

The thickness of the second color filter 232 is formed to correct the color difference between the transmission area and the reflection area.

6A and 6B, the remaining green and blue color filters are also formed in the same manner as described above to complete the red, green, and blue filters.

Here, the red, blue, and green filters 230R, 230G, and 230B together form openings 235 and 237 that expose the drain electrode 175 and the conductor 177 for the storage capacitor. Openings 235 and 237 may be formed in a later process.

Then, as shown in FIGS. 8A and 8B, the second passivation layer 180b and the gate insulating layer 140 are patterned to form contact holes exposing one ends of the gate line and the data line and the opening. In this case, it is preferable to remove the second passivation layer 180b of the transmission region together and to remove a thickness sufficient to compensate for the path difference between the transmission region and the reflection region.

1 and 2, a transparent conductive material such as IZO or ITO or the like is laminated by sputtering or the like, and a plurality of pixel electrodes 190 and a plurality of contact assistants 81 and 82 are formed by a photolithography process. Form.

Subsequently, a process of stacking and patterning an organic material including a black pigment on the insulating substrate 110 and forming a substrate spacer (not shown) and an alignment layer 11 on the thin film transistor is added. can do. The substrate spacer may be formed on the upper insulating substrate 210.

As described above, by using the transfer film according to the present invention, it is possible to easily form a color filter having a different thickness, thereby increasing the productivity by reducing the process time for forming the color filter. In addition, the problem of environmental pollution can be reduced by using no dispersion, as in the pigment dispersion method.

Although the preferred embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improvements of those skilled in the art using the basic concepts of the present invention defined in the following claims are also provided. It belongs to the scope of rights.

Claims (7)

Forming a gate line on the substrate, Forming a data line insulated from and intersecting the gate line; Forming a thin film transistor connected to the gate line and the data line; Forming a first passivation layer on the thin film transistor; Forming a color filter on the first passivation layer by a transfer method using a transfer film; Forming a second passivation layer on the color filter; And forming a pixel electrode on the second passivation layer, the pixel electrode including a reflective electrode and a transparent electrode and connected to the thin film transistor. In claim 1, The color filter of the portion corresponding to the reflective electrode is formed thinner than the color filter of the portion corresponding to the transparent electrode. In claim 2, The forming of the color filter may include forming a first color filter by a transfer method using the transfer film; And forming a second color filter by a transfer method using the same transfer film as the transfer film in a predetermined region of the first color filter. In claim 1, The thin film transistor forming a gate electrode connected to the gate line; Forming a semiconductor layer overlapping the gate electrode; Forming a source electrode overlapping the semiconductor layer and connected to the data line; Forming a drain electrode overlapping the semiconductor layer and corresponding to the source electrode with respect to the gate electrode. In claim 4, After the forming of the second passivation layer, Forming a contact hole exposing the drain electrode in the second passivation layer; The pixel electrode is connected to the drain electrode through the contact hole. In claim 5, In the forming of the contact hole, And removing an upper portion of the second passivation layer in a portion corresponding to the transparent electrode. In claim 1, The transfer method comprises the steps of preparing a transfer film comprising a colored layer, Aligning the colored layer of the transfer film so as to be above the first passivation layer; Using a roll to bring the colored layer into close contact with the upper portion of the first passivation layer, And exposing the colored layer using an optical mask and then developing the colored layer.

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