KR20060061810A - Light-emitting diode - Google Patents
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- KR20060061810A KR20060061810A KR1020067002239A KR20067002239A KR20060061810A KR 20060061810 A KR20060061810 A KR 20060061810A KR 1020067002239 A KR1020067002239 A KR 1020067002239A KR 20067002239 A KR20067002239 A KR 20067002239A KR 20060061810 A KR20060061810 A KR 20060061810A
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- 239000000463 material Substances 0.000 claims abstract description 29
- 229920000642 polymer Polymers 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 13
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims abstract description 11
- 239000011734 sodium Substances 0.000 claims abstract description 11
- 229910052708 sodium Inorganic materials 0.000 claims abstract description 10
- 150000003112 potassium compounds Chemical class 0.000 claims abstract description 8
- 230000002378 acidificating effect Effects 0.000 claims abstract description 7
- 150000001450 anions Chemical class 0.000 claims abstract description 5
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- 230000003472 neutralizing effect Effects 0.000 claims abstract description 3
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- 238000002347 injection Methods 0.000 claims description 6
- 239000007924 injection Substances 0.000 claims description 6
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- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 claims description 2
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- 235000017557 sodium bicarbonate Nutrition 0.000 claims 1
- GKWLILHTTGWKLQ-UHFFFAOYSA-N 2,3-dihydrothieno[3,4-b][1,4]dioxine Chemical compound O1CCOC2=CSC=C21 GKWLILHTTGWKLQ-UHFFFAOYSA-N 0.000 abstract description 2
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- 239000000758 substrate Substances 0.000 description 6
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 5
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- 239000004952 Polyamide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical compound N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical class COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 description 1
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- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
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- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
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- 239000007772 electrode material Substances 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 125000005678 ethenylene group Chemical group [H]C([*:1])=C([H])[*:2] 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 150000008282 halocarbons Chemical class 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910003002 lithium salt Inorganic materials 0.000 description 1
- 159000000002 lithium salts Chemical class 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- AUHZEENZYGFFBQ-UHFFFAOYSA-N mesitylene Substances CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 1
- 125000001827 mesitylenyl group Chemical group [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 229910000000 metal hydroxide Inorganic materials 0.000 description 1
- 150000004692 metal hydroxides Chemical class 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229940095102 methyl benzoate Drugs 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
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- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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- 125000001273 sulfonato group Chemical group [O-]S(*)(=O)=O 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229920002994 synthetic fiber Polymers 0.000 description 1
- KKEYFWRCBNTPAC-UHFFFAOYSA-L terephthalate(2-) Chemical compound [O-]C(=O)C1=CC=C(C([O-])=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-L 0.000 description 1
- 229920001897 terpolymer Polymers 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 150000003738 xylenes Chemical class 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
- H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/06—Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/114—Poly-phenylenevinylene; Derivatives thereof
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- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Organic Chemistry (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
본 발명은 양극(anode), 산성 홀 전도-주입 물질, 발광중합체 및 음극(cathode)의 층을 포함하는 발광 다이오드에 관한 것이다.The present invention relates to a light emitting diode comprising a layer of an anode, an acidic hole conduction-injecting material, a light emitting polymer and a cathode.
대부분의 폴리-발광 다이오드(poly-LEDs)(중합체를 기본으로 하는 발광 다이오드)는 두 개의 전극물질, 즉 홀 전도-주입 물질(hole conducting-injecting material) 및 발광 다이오드 사이에 삽입된 두개의 중합체 층으로 구성된다. 상기 발광 중합체는 P-아리렌-비닐렌 중합체{poly(p-arylene vinylene) : PAV}의 유형으로 이루질 수 있다. 제1기능을 위하여, 폴리스티렌 술폰산(polystyrene sulfonic acid :PSS)과 함께 수중분산으로 취득 가능한 폴리(3,4-에틸렌디옥시티오펜{poly(3,4-ethylenedioxythiophene):PEDT}가 사용될 수 있다. 상기 분산은 PEDOT으로 불려지고, HC Starck社에서 판매하는 BAYTRONⓡP VP CH8000(높은 저항성) 또는 BAYTRONⓡP VP AI 4083(낮은 저항성)으로 상업적으로 취득 가능하다. PSS의 산성으로 인하여, 고형물 함유량이 2.5%인 PEDOT 용액의 pH는 pH 2 이하이다. PSS의 기능은 용액 내에서 용해될 수 있게 그리고 용액 내에서 안정하게 PEDT을 유지하는 것이다. 실제로, PEDT는 PSS의 존재 하에서 중합된다. 상기 PEDT는 중합 도중에 동시에 도핑된다. 이것은 하전된 중합체를 생성시키고, 하전된 고분자로 홀에 전도시킬 수 있다. 음성 하전된 술포네이트(sulfonate) 작용기는 양성 하전된 PEDT 유닛인 혼입물질에 대한 반대이온 균형으로서 작용한다(일반적으로 PEDT에서 3개 내지 4개 유닛중 하나가 양성적으로 혼입된다).Most poly-LEDs (polymer based light emitting diodes) have two electrode materials, a hole conducting-injecting material and two polymer layers interposed between the light emitting diodes. It consists of. The light emitting polymer may be made of a type of P-arylene-vinylene polymer (poly (p-arylene vinylene): PAV). For the first function, poly (3,4-ethylenedioxythiophene): PEDT} obtainable by dispersing in water together with polystyrene sulfonic acid (PSS) may be used. The dispersion is called PEDOT and is commercially available as BAYTRON®P VP CH8000 (high resistance) or BAYTRON®P VP AI 4083 (low resistance) sold by HC Starck, due to the acidity of PSS, it has a 2.5% solids content. The pH of the phosphorus PEDOT solution is below
그러한 발광 다이오드는 인용문헌으로서 포함되고 미국공개공보 US 2003/0011306호에 공지되어 있다.Such light emitting diodes are incorporated by reference and are known in US 2003/0011306.
발광 다이오드의 효율을 증가시키기는 것 특히, 발광 다이오드를 포함하는 디스플레이의 밝기를 개선시키는 계속적인 요구가 있다. 미국특허공보 US6,284,435에서는 에테르 셀페이트 음이온 계면활성제(ether sulfate anionic surfactants)의 리튬염과 같은 고극성 유기 음이온 계면활성 첨가제를 첨가함으로써 양자 효율(quantum efficiency)을 개선할 것을 제안하였다. There is a continuing need to increase the efficiency of light emitting diodes, in particular to improve the brightness of displays comprising light emitting diodes. US Patent No. US 6,284,435 proposes to improve quantum efficiency by adding high polar organic anionic surfactant additives such as lithium salts of ether sulfate anionic surfactants.
본 발명자는 홀 전도-주입 물질로서 PEDOT와 발광 중합체로서 P-아리렌-비닐렌 중합체(p-arylene-vinylene polymer:PAV)를 포함하는 발광 다이오드의 효율은 고가의 계면활성제 또는 다른 유기물질을 사용할 필요가 없는 간단하고 저렴한 방법으로 상당히 개선될 수 있음을 발견하였다. 본 발명에 따라 적어도 부분적으로 중화된 PEDOT이 PAV와 결합하여 이용될 경우, 증가된 밝기 수준은 진동 구동 모드(pulsed driving mode)에서 높은 전압하(적어도 10V, 바람직하게는 적어도 15V)에서 얻어질 수 있다. 그러므로, 또한 본 발명은 적어도 10V, 바람직하게는 적어도 15V의 전압을 공급하기에 적합한 진동구동수단을 포함하는 발광 다이오드에 관한 것이다. 중화는 PEDOT에서 양성자의 제거 및 예를 들어 금속 수산화물(metal hydroxides)과 같은 염기의 첨가에 의한 금속이온에 의한 치환 또는 PEDOT에서 양성자를 제거할 수 있는 다른 물질에 의한 치환에 의해서 수행될 수 있다. 식 1은 한 예로서 소디움 수산화물(sodium hydroxides)을 이용한 중화 및 중합체의 구조는 다음의 화학식으로 나타내어 졌다.The inventors have found that the efficiency of light-emitting diodes comprising PEDOT as a hole conduction-injecting material and P-arylene-vinylene polymer (PAV) as a light emitting polymer can be used with expensive surfactants or other organic materials. It has been found that it can be significantly improved in a simple and inexpensive way that does not need to. When at least partially neutralized PEDOT according to the invention is used in combination with PAV, increased brightness levels can be obtained under high voltage (at least 10V, preferably at least 15V) in a pulsed driving mode. have. The invention therefore also relates to a light emitting diode comprising vibration driving means suitable for supplying a voltage of at least 10V, preferably at least 15V. Neutralization can be carried out by the removal of protons in PEDOT and by the addition of bases such as, for example, metal hydroxides, by substitution of metal ions or by other substances capable of removing protons from PEDOT. Equation 1 is an example of neutralization using sodium hydroxides and the structure of the polymer is represented by the following formula.
[화학식][Formula]
본 발명은 상기 홀 전도-주입 물질은 폴리(3,4-에틸렌디옥시티오펜)/폴리(스티렌술포네이트)(PEDOT)를 포함하고, 소디움 또는 포타슘 화합물을 포함하거나 소디움 또는 포타슘 화합물로부터 형성되는 음이온과 상기 폴리(3,4-에틸렌디옥시티오펜)(PEDOT)와 적어도 부분적으로 중화시킴으로써 수득되고, 상기 발광(light-emitting)물질은 발광성 p-아리렌-비닐렌 중합체(PAV)를 포함하는 위에서 기재한 발광 다이오드에 관한 것이다.In the present invention, the hole conduction-injection material includes poly (3,4-ethylenedioxythiophene) / poly (styrenesulfonate) (PEDOT), and includes an anion formed by sodium or potassium compounds or formed from sodium or potassium compounds. Obtained by at least partially neutralizing with the poly (3,4-ethylenedioxythiophene) (PEDOT), the light-emitting material comprising a luminescent p-arylene-vinylene polymer (PAV) It relates to the light emitting diode described.
상기 소디움 또는 포타슘 화합물은 바람직하게는 소디움(sodium) 또는 포타슘 수산화물(potassium hydroxide), 질산염(nitrate), 탄산염(carbonate) 또는 탄산수소나트륨(hydrogen carbonate), 보다 바람직하게는 소디움 하이드록사이드이다. 가장 우수한 결과는 PEDOT가 적어도 pH 3으로 중화될 때 얻어진다. 바람직하게는 pH는 3-7, 보다 바람직하게는 5.5-6.5이다. PEDOT의 중화는 예를 들어 이러한 조건하에서 질산 나트륨(sodium nitrate)은 기체성 질산으로서 용액을 이탈한 PEDOT에서 양성자를 포획하는 질산염 음이온을 형성하기 때문에, PEDOT의 중화는 일반적인 산-염기반응, 예를 들어 수산화나트륨(sodium hydroxide)으로 산-염기 반응 또는 제자리에서 수성용매를 제거하기 위한 조건하에서 PEDOT에서 양성자를 포획함으로써 얻어질 수 있다.The sodium or potassium compound is preferably sodium or potassium hydroxide, nitrate, carbonate or hydrogen carbonate, more preferably sodium hydroxide. The best results are obtained when PEDOT is neutralized to at least
또한 본 발명은 양극, 산성 홀 전도-주입 물질, 발광 중합체 및 음극의 층을 포함하는 발광 다이오드의 효율을 증가시키는 방법으로서, 상기 홀 전도-주입 물질은 폴리(3,4-에틸렌디옥시티오펜)/폴리(스티렌술포네이트(PEDOT)를 포함하고, 상기 발광물질은 폴리(p-아릴렌 비닐렌)(PAV)를 포함하는 발광 다이오드의 효율을 증가시키는 방법에 관한 것으로, 상기 방법은 산성 홀 전도-주입물질이 적어도 부분적으로 소디움 또는 포타슘 화합물을 포함하거나 소디움 또는 포타슘 화합물로부터 형성되는 음이온과 중화되는 것을 특징으로 한다.The present invention also provides a method of increasing the efficiency of a light emitting diode comprising a layer of an anode, an acidic hole conduction-injection material, a light emitting polymer and a cathode, wherein the hole conduction-injection material is poly (3,4-ethylenedioxythiophene) / Poly (styrenesulfonate (PEDOT), the light emitting material relates to a method of increasing the efficiency of a light emitting diode comprising poly (p-arylene vinylene) (PAV), the method is acidic hole conduction The injection material is at least partially neutralized with anions comprising or forming from sodium or potassium compounds.
도 1은 본 발명에 따른 발광 다이오드의 일실시예를 개략적으로 도시한 단면도이다.1 is a cross-sectional view schematically showing an embodiment of a light emitting diode according to the present invention.
도 1은 발광 다이오드의 개략도로서 일반적으로 유리인 기판(1), 산 인듐-틴(Indium-tin oxide:ITO)일 수 있는 양극(2), PEDOT를 포함하는 층(3), p-페닐렌 비 닐렌(p-penylene vinylene : PPV)을 포함하는 층(4) 및 음극(5)으로 구성하는 발광 다이오드를 나타낸 것이다.1 is a schematic diagram of a light emitting diode, a substrate (1) which is generally glass, an anode (2) which may be indium-tin oxide (ITO), a layer (3) comprising PEDOT, p-phenylene A light emitting diode composed of a
특히, 특허출원 WO 96/08047호를 참고하는데, 상기 특허출원은 다양한 물질과 다양한 물질을 제조하는 방법이 게재되어 있고, 그러한 내용은 참조문헌으로서 본 명세서에 결합된다. 전도성 투명중합체(conductive transparent polymer :CTP)로 이용하기 위한 물질은 폴리-3,4-에틸렌디옥시티오펜(poly 3,4-ethylenedioxythiophene)과 폴리스티렌 술폰산(polystyrene sulfonic acid)의 혼합물이다.In particular, reference is made to patent application WO 96/08047, which discloses a variety of materials and methods for producing a variety of materials, the contents of which are incorporated herein by reference. The material for use as a conductive transparent polymer (CTP) is a mixture of poly-3,4-ethylenedioxythiophene and polystyrene sulfonic acid.
활성층(active layer)은 전도성 물질의 두 전극층 사이에 위치한다. 상기 전극층 중 적어도 하나는 활성층에서 방출된 광에 투명하거나 반투명하여야 한다. 상기 전극층들 중의 하나는 홀을 활성층에 주입하기 위한 (양성)전극으로서 역할을 한다. 이 전극층의 물질은 높은 일 함수(work function)를 가지고 있고, 일반적으로 산인듐(indium oxide)층 또는 산인듐-틴(indium-tin oxide:ITO)층에 의해 형성된다. 또한 상기 층은 활성층 상에서 방출된 광에 투명하다. 특히 산인듐-틴(indium-tin oxide:ITO)은 충분한 전기적 전도성과 높은 투명성으로 인하여 적합하다. 다른 전극층은 전자들을 활성층에 주입하기 위한 (음성)전극으로서 역할을 한다.The active layer is located between two electrode layers of conductive material. At least one of the electrode layers should be transparent or translucent to the light emitted from the active layer. One of the electrode layers serves as a (positive) electrode for injecting holes into the active layer. The material of this electrode layer has a high work function and is generally formed by an indium oxide layer or an indium-tin oxide (ITO) layer. The layer is also transparent to light emitted on the active layer. Indium-tin oxide (ITO) is particularly suitable due to its sufficient electrical conductivity and high transparency. The other electrode layer serves as a (negative) electrode for injecting electrons into the active layer.
상기 전극층을 위한 물질은 낮은 일 함수(work function)를 가지고 있고, 일반적으로 예를 들어 인듐(indium), 칼슘(calcium), 바륨(barium) 또는 마그네슘(magnesium)의 층으로 형성된다.The material for the electrode layer has a low work function and is generally formed of a layer of, for example, indium, calcium, barium or magnesium.
산인듐-틴(indium-tin oxide:ITO)의 전극층은 진공증착법(vacuum evaporation), 스퍼터링법(sputtering) 또는 화학기상증착법(chemical vapor deposition:CVD)으로 만들어진다. 이러한 전극층과 간혹 음성 전극층, 예를 들어 칼슘(calcium)의 전극층은 일반적인 포토리소그래픽(photolithographic) 공정에 의해 또는 진공증착공정(vacuum deposition process)시에 마스크(mask)로 전극층을 부분적으로 커버함으로서 얻어진 패턴으로서 디스플레이를 위한 바람직한 패턴에 부합하는 패턴에 따라 구성된다. 디스플레시의 일반적인 예로서, 제1전극층과 제2전극층의 전극들은 선형구조이고, 직각으로 서로 교차하므로, 별도로 구동할 수 있는 직사각형 발광다이오드의 메트릭스(matrix)를 형성한다.The electrode layer of indium-tin oxide (ITO) is made by vacuum evaporation, sputtering or chemical vapor deposition (CVD). Such electrode layers and sometimes negative electrode layers, for example calcium electrode layers, are obtained by partially covering the electrode layer with a mask in a general photolithographic process or during a vacuum deposition process. As a pattern it is constructed according to a pattern that matches a desired pattern for display. As a general example of the display, the electrodes of the first electrode layer and the second electrode layer have a linear structure and cross each other at right angles, thereby forming a matrix of rectangular LEDs that can be driven separately.
직각사각형의 발광 다이오드는 디스플레이의 픽셀 즉, 화소를 구성한다. 제1전극층 및 제2전극층의 전극들이 전원(electrical source)에 연결될 경우, 발광 화소(light-emitting pixels)는 전극의 교차점에서 형성된다. 이와 같이 디스플레이는 간단한 방법으로 형성될 수 있다. 화소의 구조는 특별한 형태에 한정되지 않는다. 기본적으로 모든 화소의 형태는 조각 디스플레이, 예를 들어, 아이콘(icon) 또는 간단한 형태로 되는 것이 가능하다. 본 발명에 따라, 수동 매트릭스구조(passive matrix structure)와는 별개로, 능동 매트릭스구조(active matrix structure)가 이용될 수 있음을 유의하여야 한다.A rectangular light emitting diode constitutes a pixel, i.e., a pixel, of a display. When the electrodes of the first electrode layer and the second electrode layer are connected to an electrical source, light-emitting pixels are formed at the intersections of the electrodes. As such, the display can be formed in a simple manner. The structure of the pixel is not limited to a particular form. Basically all the shapes of the pixels can be in the form of pieces, for example icons or simple forms. In accordance with the present invention, it should be noted that an active matrix structure can be used, independent of the passive matrix structure.
단일공중합체(homopolymers), 삼원공중합체(terpolymers), 공중합체(copolymers), 블록 공중합체(block copolymers), 올리고머(oligmers)(저분자량 화합물을 포함) 및 기타 이와 유사한 물질을 포함하는 발광 중합체(light-emitting polymer)는 WO98/27136호에 게재된 바와 같이, 페닐렌(phenylene) 그룹이 치환될 수 있는 폴리(p-페닐렌 비닐렌){poly(p-phenylene vinylene:PPV}과 같은 폴리(p-아리렌 비닐렌){poly(p-arylene vinylene):PAV}의 전계발광물질(electroluminescent material)일 수 있다. 폴리(p-페닐렌 비닐렌){poly(p-phenylene vinylene):PPV}, 보다 상세하게는 페닐기로 치환된 PPV(phenyl-substituted PPV)는 사용될 수 있는 바람직한 중합체 유형이다. PAV-유형 중합체는 동일하거나 다른 적어도 두개의 아리렌-비닐렌(arylene-vinylene)성분을 포함한다. 그러므로, 본 발명에 따른 공중합체 및 이와 유사한 다른 물질은 형광(fluorene)성분 또는 스피로형광(spirofluorene)성분과 같은 다른 발광성분을 더 포함할 수 있다.Light-emitting polymers, including homopolymers, terpolymers, copolymers, block copolymers, oligomers (including low molecular weight compounds) and other similar materials ( Light-emitting polymers include poly (p-phenylene vinylene: PPV}, such as poly (p-phenylene vinylene: PPV), in which a phenylene group may be substituted, as disclosed in WO98 / 27136. p-arylene vinylene) {poly (p-arylene vinylene): PAV} electroluminescent material (poly-p-phenylene vinylene) {poly (p-phenylene vinylene): PPV} Phenyl-substituted PPV (PPV), more particularly substituted with phenyl groups, is a preferred polymer type that may be used PAV-type polymers include at least two arylene-vinylene components, the same or different. Therefore, the copolymers according to the invention and other similar materials are fluorescent. It may further include other light emitting components such as ene) component or spirofluorene component.
바람직하게는 용해성 접합중합체(soluble conjugated polymer)는 스핀코팅 공정(spin-coating process)에서나 잉크젯(ink jetting)에 의해 용이하게 적용할 수 있기 때문에 이용된다. 바람직한 용해도는 알킬(alkyl) 및/또는 알콕시(alkoxy) 또는 페닐(phenyl)기로 접합된 PPV유도체(conjugated PPV derivative)를 치환시킴으로서 개선된다. 또한 발광물질은 도핑된 저분자물질(low molecular material)일 수도 있으며, 상기 저분자 물질은 진공공정 상에서 증착된 퀴나크리돈(quinacridone)과 같은 염료로 처리된 8-하이드록시퀸올린-알루미늄(8-hydroxyquinolin-aluminum)일 수 있다.Preferably, a soluble conjugated polymer is used because it can be easily applied in a spin-coating process or by ink jetting. Preferred solubility is improved by substituting a PPV derivative conjugated with alkyl and / or alkoxy or phenyl groups. The luminescent material may also be a doped low molecular material, which is treated with a dye such as quinacridone deposited in a vacuum process, 8-hydroxyquinolin-aluminum (8-hydroxyquinolin). -aluminum).
접합 중합체(conjugated polymer)의 제조방법에 따라 상기 접합 중합체는 5~10%의 비접합 유닛을 포함할 수 있다. 상기 비접합 유닛은 전계발광 효율(electroluminescence efficiency)을 증가시키고, 활성층 상에서 주입 전자 (injected electron)당 광자(photon)의 수에 의해 제한된다.Depending on the method of making the conjugated polymer, the conjugated polymer may comprise 5-10% unconjugated unit. The non-bonded unit increases the electroluminescence efficiency and is limited by the number of photons per injected electron on the active layer.
상기 기재한 접합 PAV 유도체는 일반 유기용매 예를 들어, 크로로포름(chloroform)과 같은 할로겐화 탄화수소(halogenated hydrocarbons)에서 용해될 수 있고, 톨루엔(toluene), 자일렌(xylenes), 아니솔(anisole), 클로로벤젠(chlorobenzene) 및 메시틸렌(mesitylene)과 같은 선택 치환된 방향족 탄화수소(optionally substituted aromatic hydrocarbons)에서 용해될 수 있다. 또한 용매로서 메틸벤조에이트(methylbenzoate)와 테트라하이드로퓨란(tetrahydrofurane)이 이용될 수 있다.The conjugated PAV derivatives described above can be dissolved in common organic solvents such as halogenated hydrocarbons such as chloroform, toluene, xylenes, anisoles. It can be dissolved in optionally substituted aromatic hydrocarbons such as chlorobenzene and mesitylene. In addition, methylbenzoate and tetrahydrofurane may be used as the solvent.
접합중합체의 중합도는 10~100,000의 범위에 있다.The degree of polymerization of the conjugated polymer is in the range of 10 to 100,000.
접합중합체의 발광층의 두께는 10~250㎚의 범위에 있고, 보다 상세하게는 50~130㎚의 범위에 있다.The thickness of the light emitting layer of the conjugated polymer is in the range of 10 to 250 nm, and more specifically in the range of 50 to 130 nm.
발광구조체는 유리, 수정(quartz glass), 세라믹(ceramic) 또는 합성수지물질과 같은 것으로 만들어진 기판 위에 위치한다. 트랜지스터 또는 다른 전자수단은 기판과 이른바 능동 메트릭스 기판(active matrix substrate)을 형성하는 투명전극 사이에 위치할 것이다. 바람직하게는 반투명(translucent) 기판 또는 투명(transparent) 기판이 이용된다. 유연성 전계발광 디바이스(device)가 필요할 경우, 합성수지의 투명 박판(foil)이 이용된다. 적합한 투명 및 유연성 합성 수지의 예는 폴리아미드(polyamide), 폴리에틸렌(polyethylene), 테레프탈에이트(terephthalate), 폴리카보네이트(polycarbonate), 폴리에텐(polyethene) 및 폴리비닐 클로라이드(polyvinyl chloride)이다.The light emitting structure is placed on a substrate made of glass, quartz glass, ceramic or synthetic material. Transistors or other electronic means will be placed between the substrate and the transparent electrode forming a so-called active matrix substrate. Preferably a translucent substrate or a transparent substrate is used. If a flexible electroluminescent device is desired, a transparent foil of synthetic resin is used. Examples of suitable transparent and flexible synthetic resins are polyamide, polyethylene, terephthalate, polycarbonate, polyethene and polyvinyl chloride.
본 발명은 이하의 실시예로 설명된다.The invention is illustrated by the following examples.
설정된 밝기에서 칸델라(cd/A : 밝기의 단위) 단위로 디바이스의 효율The efficiency of the device in candela (cd / A: unit of brightness) at the set brightness
BAYTRONⓡP VP CH8000은 세슘(cesium:Cs)(비교예) 또는 소디움(Na)의 수산화물로 중화된다. 수산화세슘(CsOH)은 발광다이오드의 효율에 유익한 효과를 나타내지 않는다. 100.000cd/m2 이상의 밝기는 pH 1-7의 범위에서는 얻어질 수 없다는 것이 발견되었다.BAYTRON®P VP CH8000 is neutralized with hydroxides of cesium (Cs) (comparative) or sodium (Na). Cesium hydroxide (CsOH) does not show a beneficial effect on the efficiency of the light emitting diodes. It was found that brightness above 100.000 cd /
이에 반하여, 수산화나트륨(NaOH)은 효율면에서 유의한 효과를 가진다. pH가 높을 수록, 효율이 높아진다는 것이 발견되었다. 염기로서 수산화나트륨(NaOH)의 이용은 100.000㏅/m2 이상의 밝기를 가진 발광다이오드를 얻는 것을 가능하게 만든다. pH 4 이상에서 심지어 200.000㏅/m2 이상의 밝기가 가능하였다.In contrast, sodium hydroxide (NaOH) has a significant effect in terms of efficiency. It was found that the higher the pH, the higher the efficiency. The use of sodium hydroxide (NaOH) as the base makes it possible to obtain light emitting diodes with brightness above 100.000 mW /
이하 표의 데이터를 얻는데 이용한 장치는 산인듐-틴(Indium-Tin Oxides:ITO), 200㎚ PEDOT, 80㎚ SY-LEP, 및 Ba/Al 양극의 표준디바이스구성을 구비한다. 상기 장치는 이하 표의 괄호 안에 나타낸 전압으로 200㎐에서 1% 진동 의무주기(duty cycle)인 진동 모드에서 구동된다.The apparatus used to obtain the data in the table below has standard device configurations of Indium-Tin Oxides (ITO), 200 nm PEDOT, 80 nm SY-LEP, and Ba / Al anodes. The device is operated in vibration mode with a 1% vibration duty cycle at 200 Hz with the voltage indicated in parentheses in the table below.
SY-LEP는 독일의 코바인(Covion)社에서 상업적으로 취득되었고, 이하 구조식에 나타낸 바와 같이 적어도 빌딩블록(building block)구조의 공중합체(copolymer)이다.SY-LEP was obtained commercially from Covion, Germany, and is a copolymer of at least a building block structure, as shown in the following structural formula.
[구조식][constitutional formula]
표시된 밝기 수준이 얻어진 전압은 괄호 안에 표시하였다.The voltage at which the indicated brightness level was obtained is indicated in parentheses.
본 발명은 발광 다이오드에 이용 가능하다.The present invention can be used for a light emitting diode.
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