CN1833323A - Light-emitting diode - Google Patents

Light-emitting diode Download PDF

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Publication number
CN1833323A
CN1833323A CNA2004800224280A CN200480022428A CN1833323A CN 1833323 A CN1833323 A CN 1833323A CN A2004800224280 A CNA2004800224280 A CN A2004800224280A CN 200480022428 A CN200480022428 A CN 200480022428A CN 1833323 A CN1833323 A CN 1833323A
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Prior art keywords
led
light
layer
poly
pedot
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Chinese (zh)
Inventor
M·M·德科克-范布里曼
M·比尔彻尔
S·H·P·M·德文得
S·I·E·武尔托
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Koninklijke Philips NV
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Koninklijke Philips Electronics NV
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Publication of CN1833323A publication Critical patent/CN1833323A/en
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10Organic polymers or oligomers
    • H10K85/111Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/06Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17Carrier injection layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10Organic polymers or oligomers
    • H10K85/111Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/114Poly-phenylenevinylene; Derivatives thereof

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Organic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The invention pertains to a light-emitting diode (LED) comprising layers of an anode, an acidic hole conducting-injecting material, a light-emitting polymer, and a cathode, characterized in that the hole conducting-injecting material comprises a poly(3,4-ethylenedioxythiophene poly(styrenesulfonate) (PEDOT), which is obtainable by at least partially neutralizing the PEDOT with an anion that is comprised or formed from a sodium or potassium compound, and the light-emitting material comprises a light-emitting p-arylenevinylene polymer (PAV). The invention further relates to a method for increasing the efficiency of said light-emitting diode.

Description

Light-emitting diode
The present invention relates to comprise the light-emitting diode (LED) of anode layer, acid hole-conductive-injection material layer, light-emitting polymer layer and cathode layer.
The poly-LED (based on the LED of polymer) of great majority is made of the two layers of polymers layer that is clipped between two electrode materials: one hole-conductive-injection material and light emitting polymer.This light emitting polymer can be PAV type [poly-(to the arlydene ethenylidene)].For first function, can use poly-(3,4-ethylidene dioxy thiophene, PEDT), the aqueous dispersion form that it can itself and polystyrolsulfon acid (PSS) obtains.This dispersion is called PEDOT and can be commercially available with BAYTRON  P VP CH 8000 (high resistance) or Baytron  P VP AI 4083 (low resistances) from HC Starck.Because the acidic nature of PSS, the pH value of the PEDOT solution of 2.5% solid content is lower than 2.The effect of PSS is to keep PEDT solubilized and stable in solution.In fact PEDT polymerization under the condition that PSS exists.PEDT moment between polymerization period is doped (oxidation).This obtain can conduction hole electropolymer.Electronegative sulfonate group is served as the equilibrium ion (on three to four unit of PEDT is mixed by positively charged ground usually) of the positively charged PEDT unit that is used for the balance doping.
This LED is known in the art, and for example referring to US 2003/0011306, the document is incorporated herein by reference.
There is the efficient of improving this LED, particularly improves the lasting demand of the brightness of the display that contains these LED.But recommendation improves quantum efficiency by the lithium salts of for example various ether sulfate anion surfactants of organic anion surfactant additive of adding high degree of polarization in US 6284435.
Have now found that, contain PEDOT can be simply as hole-conductive-injection material and PAV type polymer as the usefulness of the LED of light emitting polymer and inexpensive method obtain considerable improvement, and need not to use expensive surfactant or other organic materials.According to the present invention,, can obtain the brightness degree that increases with the pulsed drive pattern at high voltage (10V, preferably 15V at least) at least if used to the PEDOT of small part neutralization and the combination of PAV.Therefore, the invention still further relates to comprise 10V, the preferred LED of the pulse mode driving mechanism of the voltage of 15V at least are provided provide at least.Neutralization can for example by adding for example metal hydroxides of alkali, perhaps can remove the material of deprotonation by other by removing deprotonation and replace realization with metal ion from PEDOT from PEDOT.For example the structure with NaOH neutralization and described polymer provides in Fig. 1.
Figure A20048002242800041
For this purpose, the present invention relates to above-mentioned LED, wherein hole-conductive-injection material comprises poly-(3,4-ethylidene dioxy thiophene poly-(styrene sulfonate) (PEDOT), this PEDOT can be by making PEDOT with comprising or result from the anionicsite in sodium or the potassium compound and obtain, and luminescent material comprises that it is luminous to arlydene ethenylidene polymer (PAV).
Described sodium or potassium compound be NaOH or potassium hydroxide, sodium nitrate or potassium nitrate, sodium carbonate or potash or sodium acid carbonate or saleratus preferably, and more preferably NaOH.When being at least 3, pH value that PEDOT is neutralized obtained best effect.Preferably, the pH value is 3-7, more preferably 5.5-6.5.The neutralization of PEDOT can be obtained by the conventional acid alkali reaction, for example use NaOH, perhaps original position is by catching proton from PEDOT under the condition of aqueous solvent and obtain being used to remove, for example also can be under the situation of sodium nitrate, form nitrate anion under these conditions, nitrate anion is caught proton from PEDOT, leave solution with gaseous state nitric acid form.
The invention still further relates to the method that is used to increase light-emitting diode (LED) efficient, this diode comprises anode layer, acid hole-conductive-injection material layer, light-emitting polymer layer and cathode layer, wherein hole-conductive-injection material comprises poly-(3,4-ethylidene dioxy thiophene poly-(styrene sulfonate) (PEDOT), luminescent material comprises luminous poly-(to the arlydene ethenylidene) (PAV), it is characterized in that described acid hole-conductive-injection material is at least in part with the anion neutralization that comprises or result from sodium or potassium compound.
In the accompanying drawings:
Fig. 1 has schematically shown the embodiment according to LED of the present invention in profile.
In Fig. 1, provided the schematic diagram of LED. This LED that illustrates have glass normally base material 1, can be ITO anode 2, comprise PEDOT layer 3, comprise layer 4 and the negative electrode 5 of PPV.
Mention especially patent application WO 96/08047, wherein disclose various raw materials and preparation method thereof, the disclosure content is by being incorporated herein by reference. The material that is used for conductibility transparent polymer (CTP) layer is the mixture of poly-3,4-ethylidene dioxy thiophene and polystyrolsulfon acid (PEDOT).
Active layer is between two electrode layers of conductive material. At least the described electrode layer of one deck must be to be transparent or semitransparent for the utilizing emitted light in the active layer. One of electrode layer serves as for (just) electrode that the hole is injected active layer. The material of this electrode layer has high work function and usually is made of indium oxide layer or indium tin oxide (ITO) layer. In addition, this layer is transparent for utilizing emitted light in active layer. Because gratifying electrical conductivity and the high grade of transparency of ITO, ITO is particularly suitable. Another electrode layer serves as for (bearing) electrode with the electronic injection active layer.
The material that is used for this layer has lower work function and usually is made of for example indium, calcium, barium or magnesium layer.
The electrode layer of ITO is provided by vacuum evaporation, sputter or CVD method. This electrode layer and usually also have positive electrode layer (for example being made of calcium) to cover to construct with mask by traditional photoetching method or by part during vacuum-deposition method according to pattern, this pattern is corresponding to the required pattern of display. In a representative instance of display, the electrode of the first electrode layer and the second electrode lay has line structure, but it also forms the rectangle LED matrix of drive mutually thus with right angle intersection.
This rectangle LED constitutes the pixel or the pictorial element of display.If the electrode of first electrode layer and the second electrode lay is connected with power supply, then form light emitting pixel in the crosspoint of electrode.Simply mode forms display by this way.The pixel structure is not limited to specific shape.Basically all primitive shapes all may produce the sector display that for example is used for display icon or simple picture and text.It should be noted that according to the present invention, except that passive-matrix structure, also use active matrix structure.
The term light emitting polymer comprises homopolymers, terpolymer, copolymer, block copolymer, oligomer (comprising low molecular weight compound) etc., it can be any poly-(to the arlydene ethenylidene) (PAV) electroluminescent material of type, for example poly-(to phenylene vinylidene), wherein phenylene can be substituted, as is disclosed in WO 98/27136.Gather (to phenylene vinylidene) (PPV), more especially the PPV of phenyl replacement is the preferred polymer type that uses.PAV type polymer comprises at least two identical or different arlydene ethenylidene parts.Thus, also can comprise other luminous components, for example fluorenes or spiral shell fluorenes part according to copolymer of the present invention etc.
The preferred soluble conjugated polymer that uses is because they are easy to for example apply with spin coating proceeding or by ink-jet.The preferred dissolution degree improves by replacing conjugation PPV derivative with alkyl and/or alkoxyl or phenyl.This luminescent material can also be the low molecular material that mixes, for example with the dyestuff oxine aluminium that mixes of quinoline a word used for translation ketone for example, deposit in vacuum technology.
Depend on the preparation of described conjugated polymer, described polymer can contain the non-conjugated units of 5-10%.Have now found that this non-conjugated units has increased electroluminescent efficient, electroluminescent efficient defines by the proton number of each injection electronics in the active layer.
Above-mentioned conjugation PAV derivative can be dissolved in the conventional organic solvent, for example halogenated hydrocarbons such as chloroform and the aromatic hydrocarbon that optionally is substituted for example toluene, dimethylbenzene, methyl phenyl ethers anisole, chlorobenzene and.Methyl benzoate and oxolane also can be used as solvent.
The degree of polymerization of described conjugated polymer is 10-100000.
The bed thickness of described conjugated polymer luminescent layer is usually between 10-250nm, particularly between the 50-130nm.
Described LED structure can be arranged on the base material, and this base material is for example made by glass, quartz glass, pottery or synthetic resin material.Transistor or other electronic installations may reside in and form so-called active matrix base material between base material and the transparency electrode.Translucent or the transparent base of preferred use.Rou Xing electroluminescent device if desired then uses the transparent membrane of synthetic resin.Suitable transparent flexible resin is for example polyamide, polyethylene terephthalate, Merlon, polyethylene and polyvinyl chloride.
The present invention sets forth by the following example.
The usefulness of described equipment under given brightness, the cd/A of unit
BAYTRON  P VP CH 8000 usefulness cesium hydroxides (comparative example) or NaOH neutralization.Find that CsOH does not have advantageous effect for the usefulness of LED.In pH 1-7 scope, can not obtain to surpass the brightness of 100000cd/m2.
In contrast, NaOH has the effect favourable to this usefulness.Have been found that pH is high more, usefulness is high more.Use NaOH also to make and to obtain the LCD that brightness surpasses 100000cd/m2 as alkali.At pH 4, even may reach more high brightness above 200000cd/m2.
The equipment that is used for acquisition table data has the standard device structure of ITO, 200nm PEDOT, 80nm SY-LEP and Ba/Al negative electrode.This equipment promptly drives at 200Hz with under 1% pulse duty cycle of the voltage that illustrates in the form bracket by pulse mode.
SY-LEP is commercially available from German Covion, and it is the copolymer that has the construction unit of following structure at least.
Compound pH Eff. (cd/A) is when 20000cd/m2 Eff. (cd/A) is when 60000cd/m2 Eff. (cd/A) is when 200000cd/m2
Ref. 1 10(8.3) 9(12.0) -
CsOH 2 9(9.0) 8.5(13.0) -
CsOH 3 7(11,5) 6.5(16.0) -
CsOH 4 2.5-3.5(16.0) - -
CsOH 5 2.5-3.5(16.0) - -
CsOH 6 2.5-3.5(16.5) - -
NaOH 2 9.5-11(10.0) 8-9(13.5) -
NaOH 3 11-13(10.3) 13-15(14.0) -
NaOH 4 9-10(12.5) 15-17(14.5) 17-23(17.5)
NaOH 5 7.5-10(11.5) 11-16(13.0) 15-20(16.2)
NaOH 6 16-17(10.5) 20-25(12.0) 28-40(15.0)
Ref: in adding and compound
Eff.=usefulness
Voltage during brightness degree shown in obtaining illustrates between bracket.

Claims (9)

1. a light-emitting diode (LED), this diode comprises anode layer, acid hole-conductive-injection material layer, light-emitting polymer layer and cathode layer, it is characterized in that described hole-conductive-injection material comprises poly-(3,4-ethylidene dioxy thiophene poly-(styrene sulfonate) (PEDOT), it can be by making PEDOT with comprising or forms anion from sodium or potassium compound to small part and acquisition, and that luminescent material comprises is luminous to arlydene ethenylidene polymer (PAV).
2. the LED of claim 1, wherein said compound is NaOH or potassium hydroxide, sodium nitrate or sells sour potassium, sodium carbonate or potash or sodium acid carbonate or saleratus.
3. the LED of claim 2, wherein said compound is a NaOH.
4. each LED among the claim 1-3, wherein pH is greater than 3.
5. each LED among the claim 1-4, wherein pH is 3-7, preferred 5.5-6.5.
6. each described LED among the claim 1-5, wherein said PAV is poly-(to phenylene vinylidene).
7. each LED among the claim 1-6 comprises being applicable to 10V, the preferred pulse mode driving mechanism of the voltage of 15V at least at least being provided.
8. the method for the driving LED of claim 8, wherein said LED drives with pulse mode under the voltage of 10V, preferred 15V at least at least.
9. be used to improve the method for light-emitting diode (LED) efficient, this light-emitting diode comprises anode layer, acid hole-conductive-injection material layer, light-emitting polymer layer and cathode layer, wherein said hole-conductive-injection material comprises poly-(3,4-ethylidene dioxy thiophene poly-(styrene sulfonate) (PEDOT), luminescent material comprises poly-(to the arlydene ethenylidene) (PAV), it is characterized in that acid hole-conductive-injection material is at least in part with the anion neutralization that comprises or result from sodium or potassium compound.
CNA2004800224280A 2003-08-06 2004-07-29 Light-emitting diode Pending CN1833323A (en)

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EP03102446.6 2003-08-06
EP03102446 2003-08-06

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JP4381080B2 (en) * 2003-09-29 2009-12-09 大日本印刷株式会社 Organic electroluminescence device and method for producing the same
US20070077451A1 (en) * 2005-09-30 2007-04-05 Pierre-Marc Allemand Neutralized anode buffer layers to improve processing and performances of organic electronic devices
JP4301260B2 (en) 2006-07-06 2009-07-22 セイコーエプソン株式会社 Method for manufacturing organic EL device and electronic device
JP5037104B2 (en) * 2006-12-11 2012-09-26 信越ポリマー株式会社 Conductive laminate and method for producing the same

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DE19652261A1 (en) * 1996-12-16 1998-06-18 Hoechst Ag Aryl-substituted poly (p-arylenevinylenes), process for their preparation and their use in electroluminescent devices
WO2002084759A1 (en) * 2001-04-17 2002-10-24 Koninklijke Philips Electronics N.V. Led comprising a conductive transparent polymer layer with low sulfate and high metal ion content
DE10123115B4 (en) * 2001-05-07 2006-05-24 Samsung SDI Co., Ltd., Suwon Hole injection layer of an organic light-emitting diode and method for its production

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TW200510511A (en) 2005-03-16
JP2007501514A (en) 2007-01-25
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KR20060061810A (en) 2006-06-08
WO2005015654A1 (en) 2005-02-17

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