KR20060054090A - High frequency module for cellular phone - Google Patents

High frequency module for cellular phone Download PDF

Info

Publication number
KR20060054090A
KR20060054090A KR1020050098272A KR20050098272A KR20060054090A KR 20060054090 A KR20060054090 A KR 20060054090A KR 1020050098272 A KR1020050098272 A KR 1020050098272A KR 20050098272 A KR20050098272 A KR 20050098272A KR 20060054090 A KR20060054090 A KR 20060054090A
Authority
KR
South Korea
Prior art keywords
ic
signal
dielectric substrate
power amplifier
antenna switch
Prior art date
Application number
KR1020050098272A
Other languages
Korean (ko)
Other versions
KR100732214B1 (en
Inventor
가즈히로 나카노
Original Assignee
알프스 덴키 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JPJP-P-2004-00303904 priority Critical
Priority to JP2004303904A priority patent/JP2006121147A/en
Application filed by 알프스 덴키 가부시키가이샤 filed Critical 알프스 덴키 가부시키가이샤
Publication of KR20060054090A publication Critical patent/KR20060054090A/en
Application granted granted Critical
Publication of KR100732214B1 publication Critical patent/KR100732214B1/en

Links

Images

Classifications

    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B1/00Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/06Receivers
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B1/00Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/06Receivers
    • H04B1/16Circuits
    • H04B1/18Input circuits, e.g. for coupling to an antenna or a transmission line
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B1/00Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40Circuits

Abstract

The present invention provides a high frequency module for a mobile phone having good heat dissipation effect and small size and resistant to dust and moisture.
The high frequency module for cellular phones of the present invention for this purpose comprises a dielectric substrate 1, an antenna switch IC 6 for switching between a reception state and a transmission state, and a SAW element for passing a predetermined frequency signal from the reception signal. It has a SAW filter 7, a power amplifier IC 8 for amplifying a transmission signal, and a transceiver IC 9 for converting a received signal into a baseband signal and converting a baseband signal into a transmission signal. It is possible to reduce the size of the baseband signal and convert the baseband signal into the transmission signal by the IC IC. Therefore, it is small and can be formed on the same dielectric substrate 1. Cheap ones are obtained.

Description

High frequency module for mobile phones {HIGH FREQUENCY MODULE FOR CELLULAR PHONE}

1 is a cross-sectional view of an essential part of a first embodiment of a high frequency module for a cellular phone of the present invention;

2 is a perspective view showing a state in which the insulating resin portion is removed with respect to the first embodiment of the high frequency module for a cellular phone of the present invention;

3 is a perspective view from the back of a first embodiment of a high frequency module for a cellular phone of the present invention;

Fig. 4 is a sectional view of principal parts of a second embodiment of a high frequency module for a cellular phone of the present invention;

5 is a circuit diagram of a high frequency module for a mobile telephone of the present invention;

6 is a plan view of a high frequency module for a conventional cellular phone,

7 is a cross-sectional view of a high frequency module for a conventional cellular phone,

8 is a cross-sectional view of an essential part of a high frequency module for a conventional cellular phone.

※ Explanation of code for main part of drawing

1: dielectric substrate 1a: one side

1b: other side 1c: recessed portion

2: wiring pattern 3: terminal

4: heat dissipation pattern 5: thermal buyer

A: antenna B: baseband signal processing circuit

M1 to M4: Mixer 6: antenna switch IC

7: SAW filter 7a-7d: SAW filter

8: Power Amplifier IC 8a, 8b: Power Amplifier IC

9: Transceiver IC 9a-9d: LNA

9e: demodulation circuit 9f: baseband circuit

9f1, 9f2: IF bandpass filter 9f3, 9f4: IF amplifier

9f5: Interface 9g: Local Oscillator

9g1: VCO 9g2: PLL Circuit

9h: modulation circuit 9i: transmission output section

9i1: VCO 9i2: PLL Circuit

9i3: mixer 9j, 9k: driver amplifier

10 wire 11: first insulating resin

12: second insulating resin portion 13: electronic components

The present invention relates to a high frequency module for a mobile phone suitable for use in a mobile phone.

6 is a plan view of a conventional high frequency module for a mobile phone, FIG. 7 is a cross-sectional view of a conventional high frequency module for a mobile phone, and FIG. 8 is a view of a high frequency module for a conventional mobile phone. It is the main section.

6 to 8, the wiring pattern 52 is provided on the upper surface and the stack of the dielectric substrate 51 on which a plurality of dielectric materials are stacked. On the top surface of the dielectric substrate 51, a flip chip-shaped antenna switch IC 53, a flip chip-shaped power amplifier IC 54, a SAW filter 55, a VCO 56 and other electronic components 57 are disposed. The desired electrical circuit is formed.

As shown in Fig. 8, a bottomed recess 51a is provided on the top surface of the dielectric substrate 51, and a power amplifier IC 54 made of a semiconductor chip is provided in the recess 51a. The dielectric substrate 51 is provided with a thermal via 58 under the power amplifier IC 54 to dissipate heat from the power amplifier IC 54.

Such a conventional high frequency module for cellular phones does not have a function of converting a received signal into a baseband signal and converting a baseband signal into a transmission signal, and therefore, it is necessary to install this function on another circuit board. Therefore, a circuit related to this function needs to be provided on the circuit board, which is large and expensive.

In addition, although heat dissipation is supported in the power amplifier IC 54, not only heat dissipation in the SAW filter 55 is insufficient, but the power amplifier IC 54 is a dielectric having the antenna switch IC 53 provided therein. Although it is housed in the recess 51a in the same plane as the board | substrate 51, since the surface area of the whole dielectric substrate 51 cannot be made small, it becomes large, and since the surface of the dielectric substrate 51 is exposed. Weak against dirt and moisture.

Conventional high-frequency modules for cellular phones do not have a function of converting a received signal into a baseband signal and converting a baseband signal into a transmission signal, so that this function needs to be installed on another circuit board. It is necessary to provide a circuit relating to a circuit board, which causes a problem of large size and high cost.

In addition, although the heat dissipation is supported in the power amplifier IC 54, the heat dissipation in the SAW filter 55 is insufficient, and the power amplifier IC 54 has a dielectric substrate on which the antenna switch IC 53 is disposed. Although it is housed in the recessed part 51a in the same surface as 51, since the surface area of the whole dielectric substrate 51 cannot be made small, it becomes large and the surface of the dielectric substrate 51 is exposed, There is a problem of weakening against dust and moisture.

Therefore, an object of the present invention is to provide a high frequency module for a mobile phone which has a good heat dissipation effect, is small in size, and resistant to dust and moisture.

As a first solution for solving the above problems, there is provided a dielectric substrate having a wiring pattern, an antenna switch IC connected to the wiring pattern to switch between a reception state and a transmission state, and a predetermined connection from the reception signal connected to the wiring pattern. A SAW filter comprising a SAW element for passing a frequency signal of a high frequency, a power amplifier IC for amplifying a transmission signal, and a wiring pattern connected to convert a received signal into a baseband signal and a baseband signal into a transmission signal. The dielectric substrate on which the SAW filter and the power amplifier IC are placed has an IC, and a thermal via is disposed at a position opposite to the lower surface of the SAW filter and the power amplifier IC.

As a second solution, at least the SAW filter and the power amplifier IC are provided on one side of the dielectric substrate, and a plurality of terminals connected to the wiring pattern on the other side of the dielectric substrate, and the thermal via. It was set as the structure in which the heat dissipation pattern to conduct to is provided.

Further, as a third solution, each of the antenna switch IC, the power amplifier IC and the transceiver IC is formed of a bare chip and connected to the wiring pattern by a wire in a state arranged on one side of the dielectric substrate. And the SAW filter is disposed on the one side of the dielectric substrate, and the one side of the dielectric substrate is provided with a first insulating resin portion covering the antenna switch IC, the power amplifier IC, the transceiver IC, and the SAW filter. It was.

As a fourth solution, the antenna switch IC, the power amplifier IC and the SAW filter are arranged on one surface side of the dielectric substrate, and on the other surface side of the dielectric substrate at a position facing the antenna switch IC. A recess with a bottom is provided, and the flip chip-shaped transceiver IC is arranged in the recess facing the antenna switch IC.

As the fifth solution, each of the antenna switch IC and the power amplifier IC is formed of a bare chip and is connected to the wiring pattern by a wire in a state of being arranged on one surface side of the dielectric substrate. A first insulating resin part covering the antenna switch IC, the power amplifier IC and the SAW filter is provided on one side of the side, and a second insulating resin part covering the transceiver IC is provided in the recess.

As a sixth solution means, the transceiver IC includes at least a demodulation circuit for converting the received signal into a baseband signal, a modulation circuit for converting a transmission baseband signal into a transmission signal, the demodulation circuit and the modulation. A baseband circuit connected to the circuit and a VCO for supplying a local oscillation signal to the demodulation circuit and the modulation circuit were provided.

In addition, as a seventh solution, the other surface side of the dielectric substrate has a plurality of terminals connected to the wiring pattern, and the terminal includes an antenna terminal connected to a transmission / reception antenna, a signal input / output terminal of a base band, and a circuit. It was set as the structure provided with the power supply terminal which supplies the power for operation.

1 is a cross-sectional view of an essential part of a first embodiment of a high frequency module for a mobile phone of the present invention, and FIG. 2 is a first embodiment of a high frequency module for a mobile phone of the present invention. The perspective view which shows the state which removed the insulation resin part with respect to an example, FIG. 3 is the perspective view seen from the back about the 1st Example of the high frequency module for cellular phones of this invention, FIG. 4 is the 2nd of the high frequency module for cellular phones of this invention. 5 is a circuit diagram of a high frequency module for a mobile telephone of the present invention.

Next, a structure according to the first embodiment of the high frequency module for a cellular phone of the present invention will be described with reference to Figs. 1 to 3. Wiring pattern 2 provided in one side (upper surface) 1a side and the inside of laminated | multilayer, and several terminal provided along the outer periphery part of the other side (lower surface) 1b side in the state connected to this wiring pattern 2 (3) and the plurality of heat dissipation patterns 4 provided inward from the terminal 3 on the other side 1b side, and extending to one side 1a side in a state in which the heat dissipation pattern 4 is conducted. It has a some thermal viae 5 installed in the inside.

The wiring pattern 2 located on one surface 1a of the dielectric substrate 1 includes an antenna switch IC 6 made of a bare chip for switching between a reception state and a transmission state, and a predetermined frequency signal from the reception signal. Two SAW filters (7) consisting of SAW elements for passing the signal, two power amplifier ICs (8) consisting of bare chips for amplifying a transmission signal, and converting a received signal into a baseband signal, and transmitting a baseband signal. The transceiver IC 9 which converts into a signal and the other electronic component 13 which consists of a chip | tip capacitor | condenser, a resistor, etc. are connected, and the desired electric circuit is formed.

In addition, the antenna switch IC 6, the power amplifier IC 8, and the transceiver IC 9 made of bare chips are connected to the wiring pattern 2 by bonding with the wire 10, and at the same time, they are SAWs that are heat generating components. The filter 7 and the power amplifier IC 8 are provided on the thermal via 5 so that heat is radiated from the heat dissipation pattern 4 via the thermal via 5 and the thermal via 5. .

The transceiver IC 9 includes at least a demodulation circuit for converting a received signal into a baseband signal, a modulation circuit for converting a transmission baseband signal into a transmission signal, and a baseband connected to the demodulation circuit and the modulation circuit. The circuit and the VCO which supplies a local oscillation signal to a demodulation circuit and a modulation circuit are comprised.

In addition, the terminal 3 provided on the side of the other surface 1b of the dielectric substrate 1 includes an antenna terminal connected to a transmitting / receiving antenna, a signal input / output terminal of a base band, and a power supply terminal for supplying power for operating a circuit. Etc. are provided.

The first insulating resin portion 11 made of synthetic resin or the like is formed on the entire surface of one side 1a of the dielectric substrate 1 by application or the like, and is mounted on one side 1a of the dielectric substrate 1. The pattern 2 is covered, and the wire 10 and the like are also fixed by the first insulating resin portion 11, whereby a high frequency module for a mobile telephone of the present invention is formed.

Next, the circuit of the high frequency module for cellular phone of the present invention having such a configuration will be described with reference to Fig. 5, and the high frequency module is divided into 850 MHz and 900 MHz GSM, 1800 MHz DCS and 1900 MHz. Commonly used in four PCS mobile phones, the input / output terminals of the antenna switch IC 6 are connected to the antenna A. FIG. Four output stages are connected to SAW filters 7a, 7b, 7c, and 7d corresponding to the respective schemes. The two input terminals are connected to a power amplifier IC 8a for GSM system of 850/900 MHz band and a power amplifier IC 8b for DCS / PCS system. The output terminal of each SAW filter 7 and the input terminal of each power amplifier IC 8 are connected to the transceiver IC 9.

Inside the transceiver IC 9, LNAs (low noise amplifiers) 9a to 9d, demodulation circuits 9e, baseband circuits 9f, local oscillators 9g, and modulation circuits 9h corresponding to four methods are provided. And a transmission output section 9i, driver amplifiers 9j and 9k. Among these structures, the demodulation circuit 9e, the baseband circuit 9f, the local oscillator 9g, the modulation circuit 9h, and the transmission output unit 9i are commonly used in each system.

The SAW filter 7a and the LNA 9a are used in the 850 MHz GSM reception mode, and the SAW filter 7b and the LNA 9b are used in the 900 MHz GSM reception mode. In the mode, the SAW filter 7c and the LNA 9c are used. In the PCS reception mode, the SAW filter 7d and the LNA 9d are used. In addition, the driver amplifier 9i and the power amplifier IC 8a are used in the 850 MHz and 900 MHz GSM transmission modes, and the driver amplifier 9h and the power amplifier IC 8b are used in the DCS and PCS transmission modes. do.

The antenna switch IC 6 is electronically controlled by an operation unit (not shown). For example, in the reception mode of the 850 MHz GSM system, the antenna A is coupled to the SAW filter 7a. The received signal is input to two mixers M1 and M2 constituting the demodulation circuit 9e via the LNA 9a. The two mixers M1 and M2 are supplied with local oscillation signals different in phase from the VCO (voltage controlled oscillator) 9g1 of the local oscillator 9g. The oscillation frequency of the VCO 9g1 is controlled by the PLL circuit 9g2, and the oscillation frequency is equal to the frequency of the received signal. Therefore, the received signal is directly converted into a baseband signal (I signal, Q signal) by the demodulation circuit 9e, and the I signal and Q signal are respectively IF band pass filters 9f1 and 9f2 and IF amplifier 9f3. And input to interface 9f5 via 9f4. The interface 9f5 has four output stages corresponding to each scheme. This baseband signal is input to a baseband signal processing circuit B formed on a mother substrate (not shown) on which this high frequency module is mounted.

In the transmission mode of the above system, the baseband signal from the baseband signal processing circuit B is input to two mixers M3 and M4 constituting the modulation circuit 9h. The local oscillation signal from the VCO 9g1 is input to the mixers M3 and M4 with a phase difference of 90 degrees and modulated into an RF signal by the baseband signal. This RF signal is converted into a transmission signal by the transmission output section 9i. The VCO 9i1 of the transmission output section 9i is controlled by the PLL circuit 9i2. The output of the VCO 9i1 is input to the driver amplifiers 9j and 9k and also to the mixer 9i3. The mixer 9i3 is supplied with an oscillation signal from an oscillator (not shown). The output of the mixer 9i3 and the modulated RF signal are input to the PLL circuit 9i2, thereby converting the RF modulated signal into a transmission signal. The transmission signal is amplified by the power amplifier IC 8a and transmitted to the antenna A via the antenna switch IC 6. The same applies to the operation of the reception mode and the transmission mode of another system.

Fig. 4 shows a second embodiment of the high frequency module for cellular phones of the present invention, and the structure of this second embodiment will be described, and the other side of the dielectric substrate 1 at a position facing the antenna switch IC 6 will be described. The recessed part 1c with a bottom is provided in the (1b) side, and the flip-chip transceiver IC 9 is connected to the wiring pattern 2 in the recessed part 1c in the state which opposes the antenna switch IC 6. The second insulating resin part made of synthetic resin or the like covering the transceiver IC 9 is provided in the concave portion 1c while being arranged in the state of being connected to the state of the snake.

The other structure has the same structure as the said 1st Example, attaches | subjects the same number to the same component, and abbreviate | omits the description here.

The high frequency module for cellular phones of the present invention includes a dielectric substrate having a wiring pattern, an antenna switch IC connected to the wiring pattern to switch between a reception state and a transmission state, and a predetermined frequency signal from the received signal connected to the wiring pattern. SAW filter comprising a SAW filter comprising a SAW element to pass through, a power amplifier IC for amplifying a transmission signal, and a transceiver IC connected to a wiring pattern to convert a received signal into a baseband signal, and converts a baseband signal into a transmission signal. The dielectric substrate on which the power amplifier IC is mounted has a thermal via disposed at a position opposite to the lower surface of the SAW filter and the power amplifier IC.

In other words, since the IC for converting the received signal into a baseband signal and converting the baseband signal into a transmission signal is constituted by an IC transceiver, it can be miniaturized and can be formed on the same dielectric substrate. And an inexpensive one is obtained.

In addition, since the SAW filter and the power amplifier IC are radiated by the thermal via, good performance is obtained.

At least the SAW filter and the power amplifier IC are provided on one side of the dielectric substrate, and on the other side of the dielectric substrate, a plurality of terminals connected to the wiring pattern and a heat dissipation pattern to conduct the thermal via are provided. The power amplifier IC has a better heat dissipation effect due to the heat dissipation pattern, so that a better performance can be obtained.

Each of the antenna switch IC, the power amplifier IC, and the transceiver IC is formed of a bare chip and is connected to the wiring pattern by a wire in a state where the antenna switch IC, the power amplifier IC, and the transceiver IC are provided on one side of the dielectric substrate, and the SAW filter is connected to one side of the dielectric substrate. Since the first insulating resin portion is provided on the surface side and covers the antenna switch IC, the power amplifier IC, the transceiver IC, and the SAW filter on one side of the dielectric substrate, it is possible to obtain a good performance by being resistant to dust and moisture. .

In addition, an antenna switch IC, a power amplifier IC, and a SAW filter are disposed on one surface side of the dielectric substrate, and a recess with a bottom is provided on the other surface side of the dielectric substrate at a position facing the antenna switch IC. Since the flip chip transceiver IC is provided in a state facing the antenna switch IC, components mounted on the dielectric substrate can be dispersed on both sides of the dielectric substrate, so that the surface area of the dielectric substrate can be made small and a small size can be obtained.

In addition, each of the antenna switch IC and the power amplifier IC is formed of a bare chip and is connected to the wiring pattern by a wire in a state where the antenna switch IC and the power amplifier IC are provided on one side of the dielectric substrate, and the antenna switch IC and the power amplifier are provided on one side of the dielectric substrate. Since the first insulating resin portion covering the IC and SAW filter is provided, and the second insulating resin portion covering the transceiver IC is provided in the recess, the components mounted on the dielectric substrate are covered by the first and second insulating resin portions. As a result, one resistant to dust and moisture can be obtained, and a good performance can be provided.

The transceiver IC includes at least a demodulation circuit for converting a received signal into a baseband signal, a modulation circuit for converting a transmission baseband signal into a transmission signal, a baseband circuit connected to the demodulation circuit and a modulation circuit, Since the VCO for supplying the local oscillation signal to the demodulation circuit and the modulation circuit is provided, various circuits are ICized to obtain a small one.

On the other side of the dielectric substrate, there are a plurality of terminals connected to a wiring pattern, and the terminal has an antenna terminal connected to a transmitting / receiving antenna, a signal input / output terminal of a base band, and a power supply terminal for supplying power for operating a circuit. Since the antenna, baseband circuit, and power supply are connected to each terminal, the mobile phone can be used. Thus, a simple structure can be obtained.

Claims (7)

  1. SAW filter comprising a dielectric substrate having a wiring pattern, an antenna switch IC connected to the wiring pattern to switch between a reception state and a transmission state, and a SAW element connected to the wiring pattern to pass a predetermined frequency signal from the received signal. And a power amplifier IC for amplifying a transmission signal, and a transceiver IC connected to the wiring pattern to convert a received signal into a baseband signal and converting a baseband signal into a transmission signal, wherein the SAW filter and the power amplifier IC are provided. And a thermal via disposed at a position facing the bottom surface of the SA W filter and the power amplifier IC.
  2. The method of claim 1,
    At least the SAW filter and the power amplifier IC are disposed on one surface side of the dielectric substrate, and a plurality of terminals connected to the wiring pattern and a heat radiation pattern conductive to the thermal via are provided on the other surface side of the dielectric substrate. High frequency module for mobile phones, characterized in that.
  3. The method according to claim 1 or 2,
    Each of the antenna switch IC, the power amplifier IC, and the transceiver IC is formed of a bare chip, and is connected to the wiring pattern by a wire in a state where the antenna switch IC, the power amplifier IC, and the transceiver IC are provided on one side of the dielectric substrate, and the SAW filter, And a first insulating resin portion covering the antenna switch IC, the power amplifier IC, the transceiver IC, and the SAW filter on the one side of the dielectric substrate, and on the one side of the dielectric substrate. High frequency module.
  4. The method according to claim 1 or 2,
    On one side of the dielectric substrate, the antenna switch IC, the power amplifier IC and the SAW filter are provided, and at the other side of the dielectric substrate at a position facing the antenna switch IC, a bottomed recess is provided. And the transceiver IC of the flip chip shape is installed in the recess in a state facing the antenna switch IC.
  5. The method of claim 4, wherein
    Each of the antenna switch IC and the power amplifier IC is formed of a bare chip, and is connected to the wiring pattern by a wire in a state where the antenna switch IC and the power amplifier IC are provided on one side of the dielectric substrate. And a first insulating resin part covering the antenna switch IC, the power amplifier IC and the SAW filter, and a second insulating resin part covering the transceiver IC in the recess.
  6. The method of claim 1,
    The transceiver IC includes at least a demodulation circuit for converting the received signal into a baseband signal, a modulation circuit for converting a transmission baseband signal into a transmission signal, and a baseband circuit connected to the demodulation circuit and the modulation circuit. And a VCO for supplying a local oscillation signal to the demodulation circuit and the modulation circuit.
  7. The method of claim 6,
    The other surface side of the dielectric substrate has a plurality of terminals connected to the wiring pattern, the terminals supplying an antenna terminal connected to a transmitting / receiving antenna, a signal input / output terminal of a base band, and a power supply for operating a circuit. A high frequency module for a mobile phone, comprising a power supply terminal.
KR20050098272A 2004-10-19 2005-10-18 High frequency module for cellular phone KR100732214B1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JPJP-P-2004-00303904 2004-10-19
JP2004303904A JP2006121147A (en) 2004-10-19 2004-10-19 High-frequency module for cellular phone

Publications (2)

Publication Number Publication Date
KR20060054090A true KR20060054090A (en) 2006-05-22
KR100732214B1 KR100732214B1 (en) 2007-06-25

Family

ID=36538659

Family Applications (1)

Application Number Title Priority Date Filing Date
KR20050098272A KR100732214B1 (en) 2004-10-19 2005-10-18 High frequency module for cellular phone

Country Status (3)

Country Link
JP (1) JP2006121147A (en)
KR (1) KR100732214B1 (en)
CN (1) CN100420159C (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103312364A (en) * 2012-03-11 2013-09-18 联发科技股份有限公司 Radio frequency modules

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008028612A (en) 2006-07-20 2008-02-07 Matsushita Electric Ind Co Ltd Communication device, and electronic device using it
US7978031B2 (en) 2008-01-31 2011-07-12 Tdk Corporation High frequency module provided with power amplifier
CN103190082B (en) * 2010-11-24 2015-09-16 日立金属株式会社 Electronic unit
JP5146627B2 (en) 2011-02-15 2013-02-20 株式会社村田製作所 Multilayer wiring board and manufacturing method thereof
JP5285806B1 (en) * 2012-08-21 2013-09-11 太陽誘電株式会社 High frequency circuit module
JP5117632B1 (en) 2012-08-21 2013-01-16 太陽誘電株式会社 High frequency circuit module
JP5768941B2 (en) 2012-10-17 2015-08-26 株式会社村田製作所 High frequency module
JP6448199B2 (en) 2014-03-11 2019-01-09 日本電波工業株式会社 Crystal oscillator with temperature chamber
CN106330236B (en) * 2016-09-28 2018-12-18 深圳三星通信技术研究有限公司 A kind of radio frequency remoto module and RF base station
US20190115309A1 (en) * 2017-10-15 2019-04-18 Skyworks Solutions, Inc. Stack assembly having electro-acoustic device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002057597A (en) * 2000-08-10 2002-02-22 Tdk Corp High frequency front end module
JP4529262B2 (en) * 2000-09-14 2010-08-25 ソニー株式会社 High frequency module device and manufacturing method thereof
US6873529B2 (en) * 2002-02-26 2005-03-29 Kyocera Corporation High frequency module
JP2003032035A (en) * 2001-07-17 2003-01-31 Alps Electric Co Ltd Transmission reception unit
JP3861669B2 (en) * 2001-11-22 2006-12-20 ソニー株式会社 Manufacturing method of multichip circuit module
JP2003218272A (en) * 2002-01-25 2003-07-31 Sony Corp High frequency module and its manufacturing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103312364A (en) * 2012-03-11 2013-09-18 联发科技股份有限公司 Radio frequency modules

Also Published As

Publication number Publication date
KR100732214B1 (en) 2007-06-25
CN100420159C (en) 2008-09-17
JP2006121147A (en) 2006-05-11
CN1770649A (en) 2006-05-10

Similar Documents

Publication Publication Date Title
US9543258B2 (en) Semiconductor device and method of forming holes in substrate to interconnect top shield and ground shield
JP6054276B2 (en) High Q transformer located at least partially in non-semiconductor substrate
JP4386205B2 (en) High frequency components and multiband communication devices
JP4521602B2 (en) Multimode high frequency circuit
JP5245413B2 (en) High frequency circuit component and communication apparatus using the same
KR100947943B1 (en) High frequency power amplifier module
US6998710B2 (en) High-frequency device
US7373171B2 (en) Front end module
US7167688B2 (en) RF transceiver module formed in multi-layered ceramic
EP0595346B1 (en) Composite microwave module assembly and its connection structure
US6885561B1 (en) Multiple chip module with integrated RF capabilities
DE10152533B4 (en) A high-frequency circuit board unit, a high-frequency module to which the unit is used, an electronic apparatus using the module, and a method of manufacturing the high-frequency circuit board unit
TWI414108B (en) Method and system for a phased array antenna embedded in an integrated circuit package
KR100677005B1 (en) Integrated electronic circuit
US6835968B2 (en) High frequency switch, two-band type high frequency switch, three-band type high frequency switch, and mobile communication equipment
DE102004016399B4 (en) High frequency module and radio device
US6456172B1 (en) Multilayered ceramic RF device
DE10300955B4 (en) Radar transceiver for microwave and millimeter wave applications
US6903617B2 (en) Method and apparatus for synthesizing high-frequency signals for wireless communications
JP3484090B2 (en) Switched antenna duplexer and mobile radio terminal
JP3734807B2 (en) Electronic component module
US7164905B2 (en) High frequency module
US6800936B2 (en) High-frequency module device
US7539022B2 (en) Chip embedded packaging structure
KR100463092B1 (en) Multilayer ceramic device

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20100531

Year of fee payment: 4

LAPS Lapse due to unpaid annual fee