KR20060053527A - Method of manufacturing thin film transistor, thin film transistor manufactured by the method and flat panel display device having the thin film transistor - Google Patents

Abstract

SUMMARY OF THE INVENTION An object of the present invention is to provide a thin film transistor which can reduce process time and reduce manufacturing cost by eliminating the use of a doping mask for forming source and drain regions.

The thin film transistor according to the present invention includes a substrate, a gate electrode formed on the substrate, a gate insulating film formed on the entire surface of the substrate while covering the gate electrode, an active layer formed on the gate insulating film and made of a polysilicon film, and a source region formed on the active layer. And a source region and a drain electrode electrically connected to the source region and the drain region.

TFT, organic EL, polysilicon film, mask, active layer

Description

A thin film transistor manufacturing method, a thin film transistor manufactured by this method, and a flat panel display device having the thin film transistor TECHNICAL FIELD

1 is a cross-sectional view of a thin film transistor according to an exemplary embodiment of the present invention.

2A through 2E are sequential process cross-sectional views illustrating a method of manufacturing a thin film transistor according to an embodiment of the present invention.

3 is a schematic cross-sectional view of a flat panel display device according to the present invention;

4 is a layout plan view illustrating a pixel part of the flat panel display of FIG. 3.

FIG. 5 is a cross-sectional view illustrating the pixel portion of FIG. 4, and is a partial cross-sectional view taken along line II of FIG. 4.

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film transistor, and more particularly, to a thin film transistor manufacturing method capable of reducing the number of masks, a thin film transistor manufactured by the method, and a flat panel display device including the thin film transistor.

Generally, a thin film transistor (TFT) is referred to as an active matrix liquid crystal display (LCD) device or an organic electroluminescent (EL) hereinafter EL. ) Is used as a drive element of a display device.

Here, the organic EL display device is a self-luminous display element that electrically excites an organic compound to emit light, and is capable of displaying an image by driving voltage or current driving N × M organic light emitting cells.

The organic light emitting cell has a diode characteristic and is also called an organic light emitting diode. The organic light emitting cell includes an anode electrode, which is a hole injection electrode, an organic thin film, which is a light emitting layer, and a cathode electrode, which is an electron injection electrode. When an exciton, which is a hole and electron injected by being injected into the inside, falls from the excited state to the ground state, light emission is performed.

The light emitting layer has a multilayer structure including an electron transport layer (ETL) and a hole transport layer (HTL) in the light emitting layer (EML) to improve the light emission efficiency by improving the balance between electrons and holes. In some embodiments, the electronic device may further include a separate electron injection layer (EIL) and a hole injection layer (HIL).

As such, the organic EL display device does not require a separate light source, unlike an LCD device, as a light emitting layer of an organic thin film is present between two electrodes, and enables low voltage driving, a wide viewing angle, and a fast response speed. Has the appropriate advantages.

On the other hand, in an active matrix type organic EL display device, a pixel driving TFT which is formed for each pixel and drives each pixel, and is formed in a scan (gate) driving circuit and a data driving circuit, and is a pixel driving TFT A TFT for driving circuit for operating is provided.

In such an organic EL display device, as the TFT, in recent years, a crystallization technique using a laser has been fabricated at a low temperature of 600 ° C. or lower, similar to amorphous silicon (a-Si) TFT. By applying a Low Temperature Polycrystalline Silicon (LTPS) TFT, which has high electron or hole mobility compared to a-Si TFT, N-channel Metal Oxide Silicon; Complementary MOS (CMOS) TFTs, in which NMOS) and P-channel MOS (PMOS) coexist, can be implemented to simultaneously integrate a pixel driver TFT and a driver circuit TFT on a substrate. Is getting.

In such a polysilicon TFT, the gate electrode may be disposed below or above the active layer with the gate insulating film interposed therebetween. However, unlike the structure in which the gate electrode is disposed above the active layer, in the structure in which the gate electrode is disposed below the active layer, a separate doping mask may be used during the doping process for forming the source region and the drain region in the active layer. Since there is a need to use the overall process time of the TFT increases, there is a problem that the manufacturing cost increases.

 The present invention is to solve the problems of the prior art as described above, to eliminate the use of the doping mask for forming the source region and drain region to reduce the process time and manufacturing cost thin film transistor manufacturing method The purpose is to provide.

Another object of the present invention is to provide a thin film transistor manufactured by the above-described method.

Another object of the present invention is to provide a flat panel display device having the above-described thin film transistor.

In order to achieve the object of the present invention as described above, the thin film transistor according to the present invention is formed on a substrate, a gate electrode formed on the substrate, a gate insulating film formed on the entire surface of the substrate covering the gate electrode, a polysilicon formed on the gate insulating film An active layer made of a film, a source region and a drain region formed on the active layer, and a source electrode and a drain electrode electrically connected to the source region and the drain region.

Here, the source region and the drain region may be made of a polysilicon film doped with N ⁺ or P ⁺ impurities, and a small amount of N ⁺ or P ⁺ impurities may be included in the active layer.

In addition, in order to achieve the object of the present invention as described above, the thin film transistor according to the present invention is a doped with a gate insulating film, a first amorphous silicon film and N ⁺ or P ⁺ impurities on the entire surface of the substrate to cover the gate electrode 2 Amorphous silicon film is deposited sequentially, the first amorphous silicon film and the second amorphous silicon film are simultaneously crystallized to form a first polysilicon film and a second polysilicon film, and the second polysilicon film and the first polysilicon film are patterned. Forming a polysilicon film pattern consisting of a second polysilicon film and an active layer consisting of a first polysilicon film, depositing a source electrode and a drain electrode material film on the entire surface of the substrate, and a source electrode and drain electrode material film and polysilicon Patterning the film pattern to form source and drain regions on the active layers on both sides of the gate electrode. At the same time it is prepared by forming a source electrode and a drain electrode electrically connected to the source region and the drain region.

Here, during crystallization, impurities of the second amorphous silicon film are diffused to dopure a small amount of impurities to the first amorphous silicon film.

At this time, PH ₃ is used as the N ⁺ impurity, B ₂ H ₆ is used as the P ⁺ impurity, and crystallization is performed using an excimer laser.

In addition, in order to achieve the object of the present invention as described above, the flat panel display device according to the present invention includes a pixel portion consisting of a drive element formed on the substrate and a display portion electrically connected to the drive element, the drive element is formed on the substrate A gate electrode formed on the substrate, a gate insulating film formed on the entire surface of the substrate while covering the gate electrode, an active layer formed on the gate insulating film and made of a polysilicon film, a source region and a drain region formed on the active layer, and a source region and a drain region And a thin film transistor including a source electrode and a drain electrode electrically connected to each other.

Here, the source region and the drain region may be made of a polysilicon film doped with N ⁺ or P ⁺ impurities, and a small amount of N ⁺ or P ⁺ impurities may be included in the active layer.

In addition, the display unit has a structure in which the first electrode, the organic light emitting layer, and the second electrode are sequentially stacked.

Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of the present invention.

First, a TFT according to an embodiment of the present invention will be described with reference to FIG. 1.

As shown in FIG. 1, a gate electrode 12 is formed on the substrate 10, a gate insulating layer 14 is formed on the entire surface of the substrate 10 to cover the gate electrode 12, and the gate insulating layer 14 is formed. ) Is formed on the active layer 16. The center portion of the active layer 16 serves as a channel region and is disposed corresponding to the gate electrode 12. Source and drain regions 18a and 18b are formed on the active layer 16 corresponding to both sides of the gate electrode 12, and source and drain regions 18a are formed on the source and drain regions 18a and 18b. And source electrodes and drain electrodes 20a and 20b electrically connected to each other.

Here, the substrate 10 is made of a transparent insulating substrate and the material may be glass or plastic.

In addition, the active layer 16 may be formed of a polysilicon film and may contain a small amount of N ⁺ or P ⁺ impurities therein, and the source and drain regions 18a and 18b may be doped with N ⁺ or P ⁺ impurities. Polysilicon film.

As such, when the active layer 16 contains a small amount of N ⁺ or P ⁺ impurities, the concentration of the channel is increased to improve the threshold voltage (Vth) characteristics, and thus the effect of improving the electrical characteristics of the TFT can be expected.

Next, the method of manufacturing the TFT described above with reference to Figs. 2A to 2D will be described.

Referring to FIG. 2A, a metal film such as MoW, Al, Cr, Al / Cr is deposited as a gate electrode material film on a transparent insulating substrate 10 made of glass or plastic, and a photo using a first mask for forming a gate electrode. The metal layer is patterned by lithography and etching to form the gate electrode 12. Next, a gate insulating film 14 is formed on the entire surface of the substrate 10 to cover the gate electrode 12.

Referring to FIG. 2B, a first a-Si film 16 "is formed on the gate insulating film 14 by deposition, and N ⁺ or P ⁺ impurities are doped on the first a-Si film 16". The second a-Si film 18 "is formed by vapor deposition. At this time, PH ₃ is used as N ⁺ impurity and B ₂ H ₆ is used as P ⁺ impurity.

Referring to FIG. 2C, the substrate 10 is heated to about 250 ° C. while the excimer laser 19 is irradiated to the first a-Si film 16 ″ and the second a-Si film 18 ″ to simultaneously crystallize the same. The first polysilicon film 16 'and the second polysilicon film 18' are formed. Here, a portion of the first polysilicon film 16 'in which the first a-Si film 16 "is crystallized forms an active layer and a channel region, and the second a-Si film ( 18 ") partially diffuses impurities, and a small amount of N ⁺ or P ⁺ impurities are included therein, thereby effecting channel doping. Accordingly, excellent TFT voltage characteristics of the TFT may be obtained without performing a separate doping process for adjusting the threshold voltage Vth of the channel.

Referring to FIG. 2D, the second polysilicon layer 18 ′ and the first polysilicon layer 16 ′ are patterned by photolithography and etching using a second mask for forming an active layer to form a gate electrode 12. ) And a polysilicon film pattern 18 and an active layer 16 corresponding to each other are formed.

Referring to FIG. 2D, a source electrode and a drain electrode material layer 20 are deposited on the gate insulating layer 14 to cover the polysilicon layer pattern 18 and the active layer 16. Next, the source electrode and drain electrode material film 20 is patterned by a photolithography and etching process using a third mask for forming the source electrode and the drain electrode, and the lower polysilicon film pattern 18 is also patterned. Source electrodes corresponding to both sides of the gate electrode 12 to form source and drain regions 18a and 18b on the active layer 16 and electrically connected to the source and drain regions 18a and 18b, and Drain electrodes 20a and 20b are formed (see FIG. 1).

As such, the active layer 16 is formed by using the second a-Si film 18 'doped with N ⁺ or P ⁺ impurities without using a separate doping mask for the source and drain regions 18a and 18b. And crystallization and patterning at the same time when forming the source electrode and the drain electrode 20a, 20b. In addition, since channel doping is simultaneously performed when the a-Si film 16 ′ for forming the active layer 16 is crystallized, an additional doping process for adjusting the threshold voltage may be excluded.

As a result, the TFT manufacturing process can be simplified to reduce the process time, to reduce the manufacturing cost, and to secure excellent threshold voltage characteristics, thereby improving the electrical characteristics of the TFT.

Next, the flat panel display according to the present invention will be described with reference to FIGS. 3 to 5. In the present invention, an organic EL display device will be described as an example of a flat panel display device.

As shown in FIG. 3, in the organic EL display device 100, the first substrate 30 and the second substrate 50 are bonded to each other through the sealant 60 to be disposed to face each other, and the upper portion of the first substrate 30 is disposed. Includes a pixel driver T made of a TFT array, a first electrode 34 serving as an anode electrode electrically connected to the pixel driver T, and red (R), green (G), and blue (B) light. A pixel portion P composed of an organic light emitting layer 36 that emits light and a display portion L composed of a second electrode 40 as a cathode electrode is formed, and is fixed to the second substrate 50 by a tape 52. A moisture absorbent 54 is formed.

Looking at the configuration of the pixel portion P of the organic EL display device described above with reference to FIG. 4 in more detail, a scan line (SL) for selecting a pixel to be driven on the first substrate 30 (see FIG. 3). ) Is arranged in one direction, and a data line (DL) for applying a voltage to the pixel according to the controlled amount is arranged to cross the scan line (SL), and supplies a power line (PL) for supplying power. ) Is disposed to cross the scan line SL while being spaced parallel to the data line DL. The pixel portion P is an area substantially defined by the scan line SL and the data line DL.

The switching element T1 that controls the flow of data according to the signal of the scan line SL is disposed at the intersection of the scan line SL and the data line DL, and is connected to the switching element T1 to connect the data line. According to the voltage applied from the DL, a storage capacitor Cs is disposed which accumulates the electric charge by the voltage difference supplied by the voltage and the power line PL. Furthermore, a driving element T2 connected to the power line PL to receive a voltage by the charge accumulated in the switching element T1 and the storage capacitor Cs and flows a current therein is disposed at the crossing portion. A display unit L connected to the T2 and emitting light by a current flowing through the driving element T2 is disposed.

Here, the switching element T1 and the driving element T2 are each composed of one TFT, and the switching element T1 and the driving element T2 may each be composed of a combination of one or more TFTs according to operating characteristics. have.

Referring to FIG. 5, the configuration of the driving element T2 and the display unit L of the pixel unit P described above will be described in more detail. In this case, the same reference numerals are assigned to the same components as in FIG. 1 in FIG. 5.

As illustrated, a gate electrode 12 is formed on the first substrate 30, a gate insulating layer 14 is formed on the entire surface of the substrate 10 to cover the gate electrode 12, and the gate insulating layer 14 is formed. ) Is formed on the active layer 16. The center portion of the active layer 16 serves as a channel region and is disposed corresponding to the gate electrode 12. Source and drain regions 18a and 18b are formed on the active layer 16 corresponding to both sides of the gate electrode 12, and source and drain regions 18a are formed on the source and drain regions 18a and 18b. And source electrodes and drain electrodes 20a and 20b electrically connected to each other, 18b to form a TFT to form the driving element T2.

Here, the material and the manufacturing method of each layer of the drive element T2 are the same as in the above-described embodiment. As a result, excellent electrical characteristics of the driving element T2 can be ensured, so that an effect of improving display quality of the organic EL display device can be expected.

A first insulating layer 32 having a via hole 32a exposing the drain electrode 20b is formed on the gate insulating layer 14 to protect the driving element T2. A first electrode 34 is formed on the first insulating layer 32 as an anode electrode electrically connected to the drain electrode 20b through the via hole 32a, and emits light of a specific color on the first electrode 34. The organic light emitting layer 36 and the second electrode 40 serving as the cathode electrode are sequentially formed to form the display portion L. The insulating layer 32 is insulated from the pixel portion P and the pixel portion P while being insulated from each other. A second insulating film 38 is formed to planarize the surface.

Here, the first electrode 34 and the second electrode 40 may be made of one or more materials of ITO, Al, Mg-Ag, and the materials may vary according to the light emission type of the display device. For example, when the organic EL display device is a top emission type, the first electrode 34 may be made of Pt, Au, Pd, or Ni, and the second electrode 40 may be made of IZO.

The organic light emitting layer 36 is copper phthalocyanine (CuPc), N, N'-di (naphthalen-1-yl) -N, N'-dipetyl-benzidine (N, N'-Di (naphthalene-1-). It consists of low molecular weight organic materials such as yl) -N, N'-diphenyl-benzidine (NPB), tris-8-hydroxyquinoline aluminum (Alq3), or polymer organic materials.

For example, when the organic emission layer 36 is formed of a low molecular weight organic material, a hole injection layer (HIL), a hole transport layer (HTL), an emission layer (EML), and an electron transport layer (Electron Transport Layer); It consists of a multilayer structure including ETL).

In addition, when the organic light emitting layer 36 is made of a polymer organic material, it is made of a hole transport layer (HTL) and an emitting layer (EML), wherein the HTL is made of PEDOT material and the EML is poly-phenylene vinyl. It is made of poly (Phenylene-vinylene (PPV) -based or polyfluorene-based material.

Although the preferred embodiments of the present invention have been described above, the present invention is not limited thereto, and various modifications and changes can be made within the scope of the claims and the detailed description of the invention and the accompanying drawings. Naturally, it belongs to the range of.

For example, in the above embodiment, only the case where the TFT is applied as the driving element of the pixel portion has been described, but such a TFT can be applied to the driving circuit as well as the pixel portion.

In the above embodiment, only the organic EL display device in which the TFT is used as the driving element and the light emitting portion includes the organic light emitting layer has been described. However, the present invention is also applied to a flat panel display device such as a liquid crystal display device in which the TFT can be used as the driving element. can do.

According to the present invention described above, crystallization when forming an active layer, a source electrode and a drain electrode using an a-Si film doped with N ⁺ or P ⁺ impurities without using a separate doping mask for the source region and the drain region of the TFT And patterning are performed at the same time. In addition, since channel doping is simultaneously performed when crystallization of an a-Si film for forming an active layer, an additional doping process for controlling a threshold voltage may be excluded.

As a result, the TFT manufacturing process can be simplified to reduce the process time, to reduce the manufacturing cost, and to secure excellent threshold voltage characteristics, thereby improving the electrical characteristics of the TFT.                     

In addition, when such a TFT is applied to a flat panel display such as an organic EL display, the display quality of the screen can be improved.

Claims (12)

Board; A gate electrode formed on the substrate; A gate insulating film formed on the entire surface of the substrate while covering the gate electrode; An active layer formed on the gate insulating film and made of a polysilicon film; A source region and a drain region formed on the active layer; And A thin film transistor comprising a source electrode and a drain electrode electrically connected to the source region and the drain region. The method of claim 1, And the source and drain regions are formed of a polysilicon film doped with N ⁺ or P ⁺ impurities. The method of claim 2, A thin film transistor including a small amount of N ⁺ or P ⁺ impurities in the active layer. Forming a gate electrode on the substrate; Sequentially depositing a gate insulating film, a first amorphous silicon film, and a second amorphous silicon film doped with N ⁺ or P ⁺ impurities to cover the gate electrode; Simultaneously crystallizing the first amorphous silicon film and the second amorphous silicon film to form a first polysilicon film and a second polysilicon film; Patterning the second polysilicon film and the first polysilicon film to form an active layer made of a polysilicon film pattern composed of a second polysilicon film and a first polysilicon film; Depositing a source electrode and a drain electrode material film on the entire surface of the substrate; And The source electrode and the drain electrode material layer and the polysilicon layer pattern are patterned to form a source region and a drain region on the active layer on both sides of the gate electrode, and a source electrode electrically connected to the source region and the drain region. And forming a drain electrode. The method of claim 4, wherein And diffusing impurities of the second amorphous silicon film during the crystallization to dope a small amount of impurities in the first amorphous silicon film. The method according to claim 4 or 5, A thin film transistor using PH ₃ as the N ⁺ impurity. The method according to claim 4 or 5, A thin film transistor using B ₂ H ₆ as the P ⁺ impurity. The method according to claim 4 or 5, Wherein the crystallization is performed using an excimer laser. A pixel unit including a driving element formed on a substrate and a display unit electrically connected to the driving element; The driving element A gate electrode formed on the substrate; A gate insulating film formed on the entire surface of the substrate while covering the gate electrode; An active layer formed on the gate insulating film and made of a polysilicon film; A source region and a drain region formed on the active layer; And And a thin film transistor including a source electrode and a drain electrode electrically connected to the source region and the drain region. The method of claim 9, And the source and drain regions are made of a polysilicon film doped with N ⁺ or P ⁺ impurities. The method of claim 10, And a small amount of N ⁺ or P ⁺ impurities in the active layer. The method of claim 9, And a display structure in which the display portion is sequentially stacked with a first electrode, an organic emission layer, and a second electrode.

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