KR20060022726A - Substrate processing method, solid state imaging device manufacturing method, thin film device manufacturing method, and program recording medium - Google Patents

Abstract

The manufacturing method of the solid-state image sensor of this invention is an insulating film exposure step which exposes the insulating film with which the board | substrate of a solid-state image sensor is equipped to the atmosphere of the mixed gas containing ammonia and hydrogen fluoride below a predetermined pressure, and the atmosphere of the mixed gas. Heating the insulating film exposed to the predetermined temperature. According to this manufacturing method, the insulating film of the board | substrate of a solid-state image sensor is exposed to the atmosphere of the mixed gas containing ammonia and hydrogen fluoride below a predetermined pressure, and the insulating film exposed to the atmosphere of the mixed gas is heated to predetermined temperature. do. When the insulating film is exposed to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride below a predetermined pressure, a product based on the insulating film and the mixed gas is generated, and the insulating film exposed to the atmosphere of the mixed gas is heated to a predetermined temperature. The resulting product is heated to vaporize. By vaporization of this product, the upper layer of the insulating film can be removed. At this time, the production amount of the product, that is, the removal amount (film thickness) of the upper layer of the insulating film can be accurately controlled by the parameter of the mixed gas. Moreover, exposure to a mixed gas and heating do not damage each element with which the board | substrate of a solid-state image sensor is equipped. Therefore, it is possible to accurately control the amount of removal of the insulating film without damaging the solid-state imaging element made of the substrate. As a result, the insulating film can be thinned.

Description

Substrate processing method, method for manufacturing solid-state image sensor, method for manufacturing thin film device and recording medium recording program {SUBSTRATE PROCESSING METHOD, SOLID STATE IMAGING DEVICE MANUFACTURING METHOD, THIN FILM DEVICE MANUFACTURING METHOD, AND PROGRAM RECORDING MEDIUM}

1 is a plan view showing a schematic configuration of a substrate processing apparatus to which a substrate processing method according to an embodiment of the present invention is applied;

2A and 2B are cross-sectional views of the second process apparatus in FIG. 1, FIG. 2A is a cross-sectional view taken along the line II-II in FIG. 1, FIG. 2B is an enlarged view of part A in FIG. 2A,

3 is a perspective view illustrating a schematic configuration of a second process apparatus in FIG. 1;

4 is a diagram showing a schematic configuration of a dry air supply system for driving a unit of a second load lock unit in FIG. 3;

5 is a diagram showing a schematic configuration of a system controller in the substrate processing apparatus of FIG. 1;

6A and 6B show a schematic configuration of a CCD sensor to which a substrate processing method according to the present embodiment is applied, and FIG. 6A illustrates a device on a wafer W in a CCD sensor. 6b is a partial cross section of a CCD sensor,

7A to 7E are process drawings showing the processing method of the substrate according to the present embodiment;

8 is a plan view showing a schematic configuration of a first modification of the substrate processing apparatus to which the substrate processing method according to the present embodiment is applied;

9 is a plan view illustrating a schematic configuration of a second modification of the substrate processing apparatus to which the substrate processing method according to the present embodiment is applied.

<Description of the symbols for the main parts of the drawings>

10 substrate processing apparatus 11 first process apparatus

12 second process unit 13 loader unit

19: conveying arm mechanism 21, 23: mounting table

22, 24: optical sensor 25: first process unit

30 gate valve 34 second process unit

38: chamber 39: ESC

40: shower head 50: process chamber container (chamber)

51: stage heater 77: dry air supply system for driving the unit

80: first solenoid valve 81: second solenoid valve

200: CCD sensor 210: photoelectric conversion element

222: interlayer insulating film 223: light shielding film

252: silicon nitride film 253: planarization film

259: microlens 261: insulating film

262 product layer

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for processing a substrate, a method for manufacturing a solid-state image sensor, a method for manufacturing a thin film device, and a recording medium on which a program is recorded, and more particularly, to a method for processing a substrate for polishing an insulating film by chemical mechanical polishing.

Especially as a manufacturing method of the color filter in solid-state image sensors, such as an electronic device, such as a CCD sensor, the color resist method is widely practiced.

In the formation of the color filter, for example, when the color filter is formed in the order of green, red, and blue, the red or blue color filter to be formed later has an inclination in the film thickness under the influence of the previously formed color filter. . For this reason, it is difficult to form a color filter to a desired film thickness, and there is no film thickness controllability. In addition, there may be an imbalance in the film thickness of the color filter in one linear sensor or between the polyhedral linear sensors, and in the solid-state imaging device, the uniformity of the film thickness of the color filter is macroscopically deteriorated, Noise and a sensitivity nonuniformity generate | occur | produced and it became the cause which remarkably deteriorated the characteristic as a line sensor.

In order to solve the above-mentioned problem, the film thickness of the 2nd and 3rd color filters conventionally formed in a 2nd color and a 3rd color is made 1.3 times or more of the film thickness of the 1st color filter formed in a 1st color, Gradients do not occur in the thicknesses of the second and third color filters in the effective pixels, and even when overlapped with the first color filters in the peripheral portion of each pixel, occurrence of the film thickness difference between the overlapped portion and the pixel center portion can be suppressed. A method for producing a color filter is disclosed (see, for example, Japanese Patent Laid-Open No. 2004-311557).

However, in the solid-state imaging device in recent years, as the number of pixels increases, the pixel size is reduced, and the refinement | miniaturization technique of a color filter array becomes essential. In addition, in order to reduce the pixel size, the thinning of the color filter is also essential in order to improve the light condensing properties of the solid-state imaging device.

Since the above-mentioned conventional method of manufacturing a color filter partitions the color filter array by assuming a line width of 10 µm, for example, it is structurally difficult to partition the color filter array into a line width of 1 µm or less. It was difficult to refine the imaging element.

In the color resist method, in order to thin a color filter, it is conventionally known that it is effective to make the content ratio of the pigment | dye concerning the photosensitive resin composition as high as possible in the pigment | dye containing photosensitive resin composition to apply | coat.

However, when the content ratio of the dye as the dye is set to near 50%, the desired pattern shape can be obtained by exposure and development, but it becomes difficult to thermoset the resin composition. Solvent resistance regarding the solvent contained in the resin composition is required for the color filter, and in the conventional manufacturing method, solvent resistance is imparted to the color filter by thermosetting the resin composition, but if the thermosetting of the resin composition is not performed The solvent resistance of a color filter worsens, and the resin composition for forming the color filter of a different color cannot be apply | coated in a next process. In addition, in order to have sufficient solvent resistance, when thermosetting at high temperature (for example, 200 degreeC or more), a color filter may reflow, dye may chemically change by heat, and a color filter may show the original spectral characteristic. There may be times when

In order to solve this problem, there was applied a resin composition is formed on the color filter, and discloses a method of manufacturing a color filter for forming an insulating film of a protective film such as a silicon oxide film (SiO ₂₎ on the respective color filters (for example, Japanese See Patent Publication No. 2003-75625. Thereby, even if it does not thermoset the coating film of a resin composition by high temperature heat processing, the solvent resistance of a color filter can be made high by presence of a protective film, and in order not to perform high temperature heat processing, Since the content rate of a pigment | dye can be made high, a color filter can be thinned.

However, in the production method of the above-mentioned color filter, it is possible to thin the color filter, but the low-temperature plasma CVD process is required to form the SiO ₂ layer of about 50㎚ film thickness as a protective film on the color filter, prepared There is a problem that the time TAT is long.

Moreover, in the manufacturing method of the conventional color filter, although the ultraviolet ray is irradiated to the apply | coated resin composition, photolysis (breaching), such as an unnecessary photosensitive agent, is performed, and the resin composition is thermosetted by heat processing, Since it is difficult to control the shrinkage rate of the resin composition by thermosetting, the error of the film thickness of a color filter arises for every heat processing. Since the error of the film thickness of a color filter becomes a cause of not having an optical axis in a solid-state image sensor, it is a cause of color nonuniformity and image nonuniformity.

Some conventional solid-state imaging devices include microlenses passing through a protective film over a color filter formed on a planarization film as an insulating film. When the distance from the light receiving portion (photoelectric conversion element) to the microlens is long, that is, when the thickness between the photoelectric conversion element and the microlens is thick, the oblique incident light is shielded by the convex portion which becomes an electrode or the like, and solid-state imaging The light condensing property of the device is lowered. Therefore, it is required to thin between the photoelectric conversion element and the micro lens. On the other hand, there is a demand for higher image quality in the color tone of the screen, and accordingly, it is necessary to further improve the transmission chromatic characteristics of the color filter. For this reason, it is necessary to aim at the improvement of the quality of a color, and can improve the quality of a color by making the film thickness of a color filter thick. By the way, thickening the film thickness of a color filter is contrary to the above-mentioned thinning request.

Further, due to the miniaturization of the solid-state imaging device, when forming the solid-state imaging device, the precision of the alignment with respect to the underlying element in the formation process of the upper element such as a color filter or a micro lens is strongly demanded. . The upper element alignment with respect to the underlying element is performed by positioning the underlying element and the upper element by detecting the reflection of the laser light from the alignment mark formed on the underlying element and the diffracted light through the planarization film. By the way, optically large shift | offset | difference is easy to generate | occur | produce in the imaging position detection of the alignment mark through a planarization film or a protective film with a thick film thickness. Therefore, in order to improve the accuracy of the alignment of the underlying element and the upper element, the planarization film and the protective film are required to be thinned.

On the other hand, thinning the planarization film and the protective film is considered to make the thickness between a photoelectric conversion element and a micro lens thin. As a method of thinning this planarization film and a protective film, the method of forming a planarization film and a protective film by an etching process is considered.

However, when performing the etching process, in the etching method using plasma, the etching surface and the electronic device are damaged, a difference in charge is generated between the photosensitive portion and the transfer portion of the solid-state image sensor, and a dark current output is performed. It causes an increase. In addition, when wet etching is used, it is difficult to control the removal amount of the planarization film and the protective film, and thus there is a problem that the desired film thickness cannot be achieved. As described above, in the conventional substrate processing method, it is difficult to form a planarization film or a protective film of a desired film thickness without damaging the electronic device.

SUMMARY OF THE INVENTION An object of the present invention is to provide a processing method of a substrate, a manufacturing method of a solid-state image sensor, a manufacturing method of a thin film device, and a recording medium on which a program can be accurately executed without damaging the electronic device. will be.

In order to achieve the above object, according to an aspect of the present invention, in the manufacturing method of a solid-state imaging device,

An insulating film exposure step of exposing the insulating film of the substrate of the solid-state imaging device to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride at a predetermined pressure or less;

Provided is a method of manufacturing a solid-state imaging device comprising heating the insulating film exposed to the atmosphere of the mixed gas to a predetermined temperature.

According to this manufacturing method, the insulating film of the board | substrate of a solid-state image sensor is exposed to the atmosphere of the mixed gas containing ammonia and hydrogen fluoride below a predetermined pressure, and the insulating film exposed to the atmosphere of the mixed gas is heated to predetermined temperature. do. When the insulating film is exposed to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride below a predetermined pressure, a product based on the insulating film and the mixed gas is generated, and the insulating film exposed to the atmosphere of the mixed gas is heated to a predetermined temperature. The resulting product is heated to vaporize. By vaporization of this product, the upper layer of the insulating film can be removed. At this time, the production amount of the product, that is, the removal amount (film thickness) of the upper layer of the insulating film can be accurately controlled by the parameter of the mixed gas. Moreover, exposure to a mixed gas and heating do not damage each element with which the board | substrate of a solid-state image sensor is equipped. Therefore, it is possible to accurately control the amount of removal of the insulating film without damaging the solid-state imaging element made of the substrate. As a result, the insulating film can be thinned.

Preferably, the insulating film exposing step performs a plasma etching process on the substrate.

According to this manufacturing method, since the plasma etching process is performed on the substrate, since no charge is accumulated in the gate electrode in the solid-state imaging device manufactured from the substrate, it is possible to prevent deterioration and destruction of the gate oxide film, thereby preventing energy particles. Is not irradiated to the solid-state imaging device, it is possible to prevent the occurrence of infiltration damage (crystal defects) in the solid-state imaging device, and since an unexpected chemical reaction due to plasma does not occur, It is possible to prevent the occurrence, whereby it is possible to prevent contamination of the processing chamber for processing the substrate.

Preferably, the insulating film exposing step performs a dry cleaning process on the substrate.

According to this manufacturing method, it is possible to suppress the change in the physical properties of the substrate surface, and thus it is possible to reliably prevent the deterioration of the wiring reliability.

Preferably, the product generation condition determining step of measuring the shape of the insulating film and determining at least one of the volume flow rate ratio of the hydrogen fluoride with respect to the ammonia in the mixed gas, and the predetermined pressure in accordance with the measured shape. It further includes.

According to this manufacturing method, the shape of the insulating film is measured, and at least one of the volume flow rate ratio of hydrogen fluoride with respect to ammonia in the mixed gas and the predetermined pressure is determined according to the measured shape. The removal amount (film thickness) can be controlled more accurately, and the efficiency of the thin film thinning process of the insulating film can be improved.

Preferably, the volume flow rate ratio of the hydrogen fluoride to the ammonia in the mixed gas is 1 to 1/2, and the predetermined pressure is 6.7 × 10 ⁻² to 4.0 pa.

According to this manufacturing method, since the volume flow rate ratio of hydrogen fluoride with respect to ammonia in a mixed gas is 1-½, and the said predetermined pressure is 6.7x10 <^-2> -4.0 Pa, it is possible to encourage production | generation of a product, Therefore, the upper layer of the insulating film can be removed (thin film) reliably.

Preferably, the predetermined temperature is 80 ~ 200 ℃.

According to this manufacturing method, since the predetermined temperature is 80 to 200 ° C., it is possible to promote vaporization of the product, so that the upper layer of the insulating film can be removed (thin film) reliably.

In order to achieve the above object, according to the second aspect of the present invention,

In the manufacturing method of a solid-state image sensor,

A film thickness determining step of determining a desired film thickness of the insulating film included in the substrate of the solid-state imaging device;

A shape measurement step before processing of measuring the shape of the insulating film;

A treatment condition determining step of comparing the measured shape with the determined film thickness to determine a first treatment condition and a second treatment condition;

An insulating film exposure step of exposing the insulating film to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure based on the first processing condition;

There is provided a method of manufacturing a solid-state imaging device comprising heating the insulating film exposed to the atmosphere of the mixed gas to a predetermined temperature based on the second processing condition.

According to this manufacturing method, the insulating film of the board | substrate of a solid-state image sensor is exposed to the atmosphere of the mixed gas containing ammonia and hydrogen fluoride below a predetermined pressure, and the insulating film exposed to the atmosphere of the mixed gas is heated to predetermined temperature. do. When the insulating film is exposed to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride below a predetermined pressure, a product based on the insulating film and the mixed gas is generated, and the insulating film exposed to the atmosphere of the mixed gas is heated to a predetermined temperature. The resulting product is heated to vaporize. By vaporization of this product, the upper layer of the insulating film can be removed. At this time, the production amount of the product, that is, the removal amount (film thickness) of the upper layer of the insulating film can be accurately controlled by the parameter of the mixed gas. Moreover, exposure to a mixed gas and heating do not damage each element with which the board | substrate of a solid-state image sensor is equipped. Therefore, control of the removal amount of an insulating film can be performed correctly, without damaging the solid-state image sensor manufactured by a board | substrate. As a result, the insulating film can be thinned.

In addition, the shape of the insulating film is measured, the first and second processing conditions are determined by comparing the measured shape with the determined desired film thickness, and the insulating film is ammonia at a predetermined pressure or less based on the first processing condition. And the insulating film exposed to the atmosphere of the mixed gas containing and hydrogen fluoride, and exposed to the atmosphere of the mixed gas based on the second processing condition, is heated to a predetermined temperature, thereby controlling the removal amount of the insulating film more accurately. Therefore, the insulating film can be made thinner. Moreover, the manufacturing efficiency of a solid-state image sensor can be improved.

Preferably, a shape measuring step after processing of measuring the shape of the insulating film after the insulating film heating step,

The processing condition changing step of changing the first processing condition and the second processing condition by comparing the measured shape with the determined film thickness in the post-process shape measurement step is further included.

According to this manufacturing method, after heating the insulating film exposed to the atmosphere of the mixed gas to a predetermined temperature, the shape of the insulating film is measured, and the first and second processing conditions are compared by comparing the measured shape with the determined desired film thickness. As a result, the control of the removal amount of the insulating film can be carried out accurately, and thus the insulating film can be further thinned.

Preferably, the first processing condition is at least one of a volume flow rate ratio of the hydrogen fluoride to the ammonia in the mixed gas, and the predetermined pressure, and the second processing condition is the predetermined temperature.

According to this manufacturing method, the first processing condition is at least one of a volume flow rate ratio of hydrogen fluoride with respect to ammonia in the mixed gas, and a predetermined pressure, and the second processing condition is a predetermined temperature, so that the above-mentioned claims 7 and 7 The effect of 8 can be achieved reliably.

In order to achieve the above object, according to the third aspect of the present invention,

A plurality of photoelectric conversion elements provided in a matrix form on the substrate, an insulating film formed on the substrate on which the plurality of photoelectric conversion elements are installed, a signal charge transfer electrode formed adjacent to the photoelectric conversion element and composed of a switching element and a wiring; And a light shielding film comprising an interlayer insulating film formed on the signal charge transfer electrode and a metal film formed on the signal charge transfer electrode via the interlayer insulating film.

A metal film deposition step of forming the metal film to form the light shielding film;

A resist patterning step of forming a resist having a predetermined pattern for forming the light shielding film on the formed metal film;

A patterning step of forming the light shielding film and the holes by patterning the insulating film by dry etching to the vicinity of the metal film and the photoelectric conversion element using the resist;

A resist removal step of removing the resist;

A silicon nitride film forming step of forming a silicon nitride film into a recess defined by the light shielding film and the hole;

A flattening film forming step of applying a transparent insulating material having a lower refractive index than the silicon nitride film to form a first insulating layer and simultaneously flattening the first insulating layer to form a flattening film;

A color filter forming step of forming a color filter on the planarization film;

Forming a protective film by forming a second insulating layer on the color filter and simultaneously thinning the second insulating layer;

The insulating film exposing step of forming the planarizing film and forming the protective film exposing the first insulating layer and the second insulating layer to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure; A method of manufacturing a solid-state imaging device is provided that includes an insulating layer heating step of heating the first insulating layer and the second insulating layer exposed to an atmosphere of a predetermined temperature.

According to this manufacturing method, ammonia and hydrogen fluoride are below a predetermined pressure between the first insulating layer coated to form the planarization film on which the color filter is formed, and the second insulating layer coated to form the protective film on the color filter under a predetermined pressure. The first and second insulating films exposed to the atmosphere of the mixed gas, wherein the first and second insulating film exposed to the atmosphere of the mixed gas is heated to a predetermined temperature. When the first and second insulating films are exposed to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride below a predetermined pressure, a product based on the first and second insulating films and the mixed gas is generated, and the atmosphere of the mixed gas is generated. When the first and second insulating films exposed to the substrate are heated to a predetermined temperature, the resulting product is heated to vaporize. By vaporization of this product, the upper layers of the first and second insulating films can be removed. At this time, the production amount of the product, that is, the removal amount (film thickness) of the upper layers of the first and second insulating films can be precisely controlled by the parameter of the mixed gas. Moreover, exposure to a mixed gas and heating do not damage each element of a solid-state image sensor. Therefore, it is possible to accurately control the removal amount of the insulating film without damaging the solid-state imaging element. As a result, the insulating film can be thinned.

In order to achieve the above object, according to the fourth aspect of the present invention,

In the manufacturing method of a solid-state image sensor,

A light receiving portion forming step of forming a plurality of light receiving portions that generate signal charges on the substrate in accordance with the light to be received;

An insulating film forming step of forming an insulating film on the substrate on which the light receiving portion is formed;

A signal charge transfer unit forming step of forming a signal charge transfer unit for transferring the signal charges obtained from the plurality of light receiving units;

A light shielding film forming step of forming a conductive light shielding film on the signal charge transfer unit;

A light transmitting electrode forming step of forming a light transmitting electrode made of an amorphous silicon based thin film on the plurality of light receiving parts and directly on the light blocking film via the insulating film,

The insulating film forming step includes an insulating material coating step of coating an insulating material on a substrate on which the light receiving portion is formed to form the insulating film, and the coated insulating material in an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure. A method of manufacturing a solid-state imaging device is provided, including an insulating film exposing step to be exposed and an insulating material heating step of heating the insulating material exposed to the atmosphere of the mixed gas to a predetermined temperature.

According to this manufacturing method, the insulating material coated on the substrate in order to form an insulating film on the substrate on which the light receiving portion is formed is exposed to the atmosphere of the mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure, and the atmosphere of the mixed gas. The insulating material exposed to is heated to a predetermined temperature. When the insulating material is exposed to the atmosphere of the mixed gas containing ammonia and hydrogen fluoride below a predetermined pressure, a product based on the insulating material and the mixed gas is produced, and the insulating material exposed to the atmosphere of the mixed gas is heated to a predetermined temperature. The resulting product is heated to vaporize. By vaporization of this product, the upper layer of the insulating material can be removed. At this time, the production amount of the product and the removal amount (film thickness) of the upper layer of the insulating material can be accurately controlled by the parameters of the mixed gas. Moreover, exposure to a mixed gas and heating do not damage each element of a solid-state image sensor. Therefore, it is possible to accurately control the removal amount of the insulating film without damaging the solid-state imaging element. As a result, the insulating film can be thinned.

In order to achieve the above object, according to the fifth aspect of the present invention,

In the manufacturing method of the thin film device for CCD provided with the some chip | tip which has the same shape pattern formed on the board | substrate, and the insulating thin film which is optically transparent at least on the surface,

A film forming step of forming an insulating film to form the thin film;

A film exposure step of exposing the insulating film to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride below a predetermined pressure;

A film heating step of heating the insulating film exposed to the atmosphere of the mixed gas to a predetermined temperature;

A film inspection step of performing inspection on a predetermined condition of the heated insulating film at a predetermined inspection point in each of the plurality of chips;

And a conveyance step of conveying the thin film device to move to the next step when the insulating film satisfies the predetermined condition at the inspection point of each chip in the film inspection step. A method for producing a thin film device is provided.

According to this manufacturing method, the insulating film formed in order to form a thin film of the thin film device for CCD is exposed to the atmosphere of the mixed gas containing ammonia and hydrogen fluoride below a predetermined pressure, and is exposed to the atmosphere of the mixed gas. The insulating film thus obtained is heated to a predetermined temperature. When the insulating film is exposed to the atmosphere of the mixed gas containing ammonia and hydrogen fluoride below a predetermined pressure, a product based on the insulating film and the mixed gas is produced, and the insulating film exposed to the atmosphere of the mixed gas is predetermined. When heated to a temperature of, the resulting product is heated to vaporize. By vaporization of this product, the upper layer of the insulating film can be removed. At this time, the production amount of the product, that is, the removal amount (film thickness) of the upper layer of the insulating film can be precisely controlled by the parameter of the mixed gas. In addition, exposure to a mixed gas and heating do not damage each element of the thin film device for CCD. Therefore, it is possible to accurately control the removal amount of the insulating film without damaging each element of the thin film device. As a result, the insulating film can be thinned. In addition, the inspection regarding predetermined conditions is performed with respect to the heated insulating film in the predetermined test | inspection point in each of several chip | tips, and an insulating film meets predetermined | prescribed condition in the test | inspection point in each chip | tip. In this case, since the thin film device is moved to the next step, the yield rate of the CCD can be improved.

In order to achieve the above object, according to the sixth aspect of the present invention,

A recording medium on which a program for causing a computer to execute a processing method of a substrate is recorded.

An insulation film exposure module for exposing the insulation film provided on the substrate to a atmosphere of a mixed gas containing ammonia and hydrogen fluoride at a predetermined pressure or less;

A recording medium is provided which records a program for causing a computer to execute a method of processing a substrate including an insulating film heating module for heating the insulating film exposed to the atmosphere of the mixed gas to a predetermined temperature.

In order to achieve the above object, according to the seventh aspect of the present invention,

A recording medium having recorded thereon a program for causing a computer to execute a method for manufacturing a solid-state imaging device,

A film thickness determining module for determining a desired film thickness of the insulating film included in the substrate of the solid-state imaging device;

A shape measuring module before processing for measuring the shape of the insulating film;

A processing condition determination module for comparing the measured shape with the determined film thickness to determine a first processing condition and a second processing condition;

An insulating film exposure module for exposing the insulating film to a atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure based on the first processing condition;

A recording medium is provided which records a program for causing a computer to execute a method for manufacturing a solid-state imaging device comprising a module for heating an insulating film exposed to an atmosphere of the mixed gas to a predetermined temperature based on the second processing condition.

In order to achieve the above object, according to the eighth aspect of the present invention,

A plurality of photoelectric conversion elements provided in a matrix form on the substrate, an insulating film formed on the substrate on which the plurality of photoelectric conversion elements are installed, a signal charge transfer electrode formed adjacent to the photoelectric conversion element and composed of a switching element and a wiring; And a recording medium for recording a program for causing a computer to execute a method for manufacturing a solid-state imaging element, the light shielding film comprising an interlayer insulating film formed on the signal charge transfer electrode and a metal film formed on the signal charge transfer electrode via the interlayer insulating film. To

A metal film deposition module for forming the metal film to form the light shielding film;

A resist patterning module for forming a resist having a predetermined pattern for forming the light shielding film on the formed metal film;

A patterning module that forms the light shielding film and the holes by patterning the insulating film by dry etching to the vicinity of the metal film and the photoelectric conversion element using the resist;

A resist removal module for removing the resist;

A silicon nitride film forming module for forming a silicon nitride film into a recess defined by the light shielding film and the hole;

A planarization film forming module for applying a transparent insulation material having a lower refractive index than the silicon nitride film to form a first insulation layer and simultaneously planarizing the first insulation layer to form a planarization film;

A color filter forming module for forming a color filter on the planarization film;

A protective film forming module for forming a protective film by forming a second insulating layer on the color filter and simultaneously thinning the second insulating layer;

The insulating film exposing module, wherein the planarization film forming module and the protective film forming module expose the first insulating layer and the second insulating layer to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure; There is provided a recording medium which records a program for causing a computer to execute a method of manufacturing a solid-state imaging device each including an insulating layer heating module for heating the first insulating layer and the second insulating layer exposed to a predetermined temperature to a predetermined temperature.

In order to achieve the above object, according to the ninth aspect of the present invention,

A recording medium having recorded thereon a program for causing a computer to execute a method for manufacturing a solid-state imaging device,

A light receiving unit formation module for forming a plurality of light receiving units on the substrate for generating signal charges according to the light to be received;

An insulating film forming module for forming an insulating film on a substrate on which the light receiving part is formed;

A signal charge transfer unit formation module for forming a signal charge transfer unit for transferring the signal charges obtained from the plurality of light receiving units;

A light shielding film formation module for forming a conductive light shielding film on the signal charge transfer unit;

A light transmitting electrode forming module for forming a light transmitting electrode made of a thin film of amorphous silicon based on the plurality of light receiving parts through the insulating film and directly on the light blocking film by CVD;

The insulating film forming module includes an insulating material coating module for coating an insulating material on a substrate on which the light receiving portion is formed to form the insulating film, and the coated insulating material in an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure. There is provided a recording medium which records a program for causing a computer to execute a method for manufacturing a solid-state imaging device comprising an insulating film exposing module to be exposed and an insulating material heating module for heating the insulating material exposed to the atmosphere of the mixed gas to a predetermined temperature.

In order to achieve the above object, according to the tenth aspect of the present invention,

A recording medium having recorded thereon a program for causing a computer to execute a method for manufacturing a thin film device for a CCD having a plurality of chips having the same shape pattern formed on a substrate and at least an optically transparent insulating thin film on its surface.

A film forming module for forming an insulating film to form the thin film;

A film exposure module for exposing the insulating film to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride below a predetermined pressure;

A membrane heating module for heating the insulating film exposed to the atmosphere of the mixed gas to a predetermined temperature;

A film inspection module for inspecting a predetermined condition of the heated insulating film at a predetermined inspection point in each of the plurality of chips;

In the film inspection module, a CCD including a transport module for transporting the thin film device to move to the next step when the insulating film satisfies the predetermined condition at the inspection point of each chip. A recording medium is provided that records a program for causing a computer to execute a method for manufacturing a thin film device.

The above and other objects, features and advantages of the present invention will become more apparent from the following detailed description when read in conjunction with the accompanying drawings.

EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this invention is described, referring drawings.

First, the processing method of the board | substrate which concerns on embodiment of this invention is demonstrated.

1 is a plan view showing a schematic configuration of a substrate processing apparatus to which a substrate processing method according to the present embodiment is applied.

In FIG. 1, the substrate processing apparatus 10 performs reactive ion etching (hereinafter referred to as "RIE") processing on a wafer (hereinafter, simply referred to as "wafer") (substrate) W for an electronic device. A second process unit 11 and a second process unit arranged in parallel with the first process unit 11 to perform a chemical oxide removal (COR) process and a post heat treatment (PHT) process described later on the wafer W; The process apparatus 12 and the loader unit 13 as a common conveyance chamber of the rectangular shape to which the 1st process apparatus 11 and the 2nd process apparatus 12 were respectively connected are provided.

The loader unit 13 is equipped with a HOUP (Front Opening Unified Pod) 14 as a container for holding 25 wafers W, in addition to the above-described first process apparatus 11 and second process apparatus 12, respectively. Three HOUP mounts 15, an orienter 16 for prealigning the position of the wafer W carried out by the HOUP 14, and first and second IMS for measuring the surface state of the wafer W. (Integrated Metrology System, manufactured by Therma-Wave, Inc.) (17, 18) is connected.

The first process device 11 and the second process device 12 are connected to the side wall in the longitudinal direction of the loader unit 13 and sandwich the loader unit 13 so as to face the three HOUP mountings 15. The orienter 16 is disposed at one end of the loader unit 13 in the longitudinal direction, and the first IMS 17 is disposed at the other end of the loader unit 13 in the longitudinal direction, and the second IMS ( 18 is arranged in parallel with three HOUP mounts 15.

The loader unit 13 includes a scalar type dual arm type transfer arm mechanism 19 for carrying the wafer W disposed therein and a wafer W disposed on the side wall so as to correspond to each HOUP mount 15. Three load ports 20 are provided as the inlets of the. The transfer arm mechanism 19 takes out the wafer W via the load port 20 with the HOUP 14 mounted on the HOUP mounting table 15, and takes the taken out wafer W into the first process apparatus ( 11) It carries in and out to the 2nd process apparatus 12, the orienter 16, the 1st IMS 17 and the 2nd IMS 18. FIG.

The first IMS 17 is a monitor of an optical system, and mounts a mounting table 21 on which the loaded wafer W is mounted, and an optical sensor 22 facing the wafer W mounted on the mounting table 21. And the surface shape of the wafer W, for example, the film thickness of the surface layer and CD (Critical Dimension) values such as wiring grooves and gate electrodes. The 2nd IMS 18 is also an optical system monitor, and is equipped with the mounting base 23 and the optical sensor 24 similarly to the 1st IMS 17, and measures the number of particles in the surface of the wafer W. As shown in FIG.

The 1st process apparatus 11 is a link type which exchanges the wafer W with the 1st process unit 25 as a 1st vacuum processing chamber which performs RIE process on the wafer W, and the said 1st process unit 25. As shown in FIG. It has the 1st load lock unit 27 which incorporates the 1st conveyance arm 26 of a single peak type.

The first process unit 25 has a cylindrical processing chamber container (chamber) and an upper electrode and a lower electrode disposed in the chamber, and the distance between the upper electrode and the lower electrode is for performing RIE processing on the wafer W. Are set at appropriate intervals. In addition, the lower electrode includes an ESC 39 at its front end that chucks the wafer W by a Coulomb force or the like.

The first process unit 25 introduces a processing gas into the chamber, generates an electric field between the upper electrode and the lower electrode, thereby converting the introduced processing gas into plasma to generate ions and radicals, and to the ions and radicals. The RIE process is performed on the wafer W by this.

In the first process apparatus 11, the internal pressure of the loader unit 13 is maintained at atmospheric pressure, while the internal pressure of the first process unit 25 is maintained at vacuum. Therefore, the 1st load lock unit 27 is equipped with the vacuum gate valve 29 in the connection part with the 1st process unit 25, and the standby gate valve 30 is provided in the connection part with the loader unit 13. As shown in FIG. As equipped, it is comprised as a vacuum preliminary conveyance chamber which can adjust the internal pressure.

Inside the first load lock unit 27, a first conveyance arm 26 is provided in a substantially central portion, and a first buffer 31 is provided on the first process unit 25 side than the first conveyance arm 26. The 2nd buffer 32 is provided in the loader unit 13 side rather than the 1st conveyance arm 26. As shown in FIG. The first buffer 31 and the second buffer 32 are disposed on the track on which the support part (peak) 33 for supporting the wafer W disposed on the tip end of the first transfer arm 26 moves. By temporarily evacuating the processed wafer W above the trajectory of the support part 33, the first processing unit 25 of the RIE unprocessed wafer W and the RIE processed wafer W are processed. Enables a smooth replacement

The 2nd process apparatus 12 passes through the 2nd process unit 34 as a 2nd vacuum processing chamber which performs COR process on the wafer W, and the vacuum process valve 35 to the said 2nd process unit 34. As shown in FIG. The link which exchanges the wafer W with the 3rd process unit 36 as a 3rd vacuum processing chamber which performs a PHT process to the connected wafer W, and the 2nd process unit 34 and the 3rd process unit 36. The 2nd load lock unit 49 which incorporates the 2nd conveyance arm 37 of a type | mold single peak type is provided.

FIG. 2 is a cross-sectional view of the second process apparatus in FIG. 1, FIG. 2A is a cross-sectional view taken along the line II-II in FIG. 1, and FIG. 2B is an enlarged view of a portion A in FIG. 2A.

In FIG. 2A, the second process unit 34 includes a cylindrical processing chamber container (chamber) 38, an ESC 39 as a mounting table of the wafer W disposed in the chamber 38, and a chamber 38. Is disposed between the shower head 40 disposed above the), the turbo molecular pump (TMP) 41 for exhausting gas, etc. in the chamber 38, and the chamber 38 and the TMP 41. APC (Automatic Pressure Control) valve 42 as a variable butterfly valve for controlling the pressure in 38 is provided.

The ESC 39 has an electrode plate (not shown) to which a direct current voltage is applied, and absorbs and holds the wafer W by a Coulomb force or a Johnson-Rahbek force generated by the direct current voltage. do. In addition, the ESC 39 is provided with a refrigerant chamber (not shown) as a temperature control mechanism. A refrigerant having a predetermined temperature, such as cooling water or galden liquid, is circulated and supplied to the refrigerant chamber, and the processing temperature of the wafer W adsorbed and held on the upper surface of the ESC 39 is controlled by the temperature of the refrigerant. The ESC 39 also includes a heat conduction gas supply system (not shown) for supplying heat conduction gas (helium gas) to every corner between the upper surface of the ESC 39 and the back surface of the wafer W. As shown in FIG. The heat conduction gas performs heat exchange between the ESC 39 and the wafer W held at the desired designated temperature by the refrigerant during the COR treatment, and efficiently cools the wafer W efficiently and uniformly.

In addition, the ESC 39 has a plurality of pusher pins 56 as lift pins protruding from the upper surface thereof, and these pusher pins 56 have an ESC 39 when the wafer W is adsorbed and held by the ESC 39. ), And to carry out the COR-processed wafer W from the chamber 38, protrudes from the upper surface of the ESC 39 and lifts the wafer W upwards.

The shower head 40 has a two-layer structure and includes a first buffer chamber 45 and a second buffer chamber 46 of the lower layer portion 43 and the upper layer portion 44, respectively. The first buffer chamber 45 and the second buffer chamber 46 communicate with the chamber 38 via the gas air holes 47 and 48, respectively. That is, the shower head 40 includes two passages each having an internal passage in the chamber 38 of the gas supplied to the first buffer chamber 45 and the second buffer chamber 46, respectively, and overlapping in a stepped layer shape. It consists of an upper body (lower layer part 43, upper layer part 44).

When COR processing is performed on the wafer W, NH ₃ (ammonia) gas is supplied to the first buffer chamber 45 from an ammonia gas supply pipe 57, which will be described later, and the supplied ammonia gas is a gas air hole 47. HF (hydrogen fluoride) gas is supplied to the second buffer chamber 46 from the hydrogen fluoride gas supply pipe 58 described later, and the supplied hydrogen fluoride gas is supplied to the gas air hole. It is supplied into the chamber 38 via the 48.

The shower head 40 also incorporates a heater (not shown), such as a heating element. This heating element is preferably arranged on the upper layer portion 44 to control the temperature of the hydrogen fluoride gas in the second buffer chamber 46.

In addition, as shown in FIG. 2B, the openings into the chamber 38 in the gas air holes 47 and 48 are formed in such a shape that the ends thereof gradually spread. As a result, ammonia gas or bloso gas can be efficiently diffused into the chamber 38. In addition, since the gas air holes 47 and 48 have a shape in which the cross section becomes narrow, the deposits generated in the chamber 38 are formed in the gas air holes 47 and 48, and thus, the first buffer chamber 45 and the second buffer. Backflow to the seal 46 can be prevented. The gas air holes 47 and 48 may be spiral air holes.

This second process unit 34 performs a COR process on the wafer W by adjusting the pressure in the chamber 38 and the volume flow rate ratios of ammonia gas and hydrogen fluoride gas. In addition, since the second process unit 34 is designed to mix ammonia gas and hydrogen fluoride gas for the first time in the chamber 38 (post mix design), the two kinds of gases are introduced into the chamber 38. Until the above two kinds of gases are mixed, the hydrogen fluoride gas and the ammonia gas are prevented from reacting before introduction into the chamber 38 until the gas is mixed.

In the second process unit 34, the side wall of the chamber 38 incorporates a heater (not shown), for example, a heating element, and prevents the ambient temperature in the chamber 38 from lowering. Thereby, the reproducibility of COR processing can be improved. In addition, the heating element in the side wall prevents side products generated in the chamber 38 from adhering to the inside of the side wall by controlling the temperature of the side wall.

Referring again to FIG. 1, the third process unit 36 includes a process chamber container (chamber) 50 in the shape of a housing body, and a stage heater 51 as a mounting table of the wafer W disposed in the chamber 50. And a buffer arm 52 disposed around the stage heater 51 to lift the wafer W mounted on the stage heater 51 upward, and as an openable and openable cover to block the atmosphere inside and outside the chamber. PHT chamber leads (not shown).

The stage heater 51 is made of aluminum having an oxide film formed on its surface, and heats the wafer W mounted by a built-in heating wire or the like to a predetermined temperature. Specifically, the stage heater 51 directly heats the mounted wafer W to 100-200 degreeC, preferably about 135 degreeC over at least 1 minute.

The sheet heater made of silicone rubber is disposed in the PHT chamber lid. In addition, a cartridge heater (not shown) is built in the side wall of the chamber 50, and the cartridge heater controls the wall surface temperature of the side wall of the chamber 50 to 25 to 80 ° C. As a result, the secondary product is prevented from adhering to the side wall of the chamber 50, and the generation of particles due to the attached secondary product is prevented, thereby extending the cleaning period of the chamber 50. Moreover, the outer periphery of the chamber 50 is covered by the heat shield.

As a heater for heating the wafer W from above, instead of the sheet heater described above, an ultraviolet radiation heater may be disposed. As an ultraviolet radiation heater, the ultraviolet lamp etc. which radiate the ultraviolet-ray of wavelength 190-400 nm correspond.

The buffer arm 52 temporarily evacuates the wafer W subjected to the COR treatment to the upper side of the trajectory of the support part 53 in the second transfer arm 37, whereby the second process unit 34 or the third It is possible to smoothly replace the wafer W in the process unit 36.

This third process unit 36 performs a PHT process on the wafer W by adjusting the temperature of the wafer W. As shown in FIG.

The 2nd load lock unit 49 has the conveyance chamber (chamber) 70 of the shape of the housing body in which the 2nd conveyance arm 37 is accommodated. In addition, the internal pressure of the loader unit 13 is maintained at atmospheric pressure, while the internal pressures of the second process unit 34 and the third process unit 36 are maintained in vacuum. Therefore, the second load lock unit 49 includes the vacuum gate valve 54 at the connection with the third process unit 36, and at the same time, the standby door valve 55 is provided at the connection with the lock unit 13. By providing, it is comprised as a vacuum preliminary conveyance chamber which can adjust the internal pressure.

FIG. 3 is a perspective view illustrating a schematic configuration of a second process apparatus in FIG. 1.

In FIG. 3, the second process unit 34 includes an ammonia gas supply pipe 57 for supplying ammonia gas to the first buffer chamber 45, and hydrogen fluoride for supplying hydrogen fluoride gas to the second buffer chamber 46. The gas supply pipe 58, the pressure gauge 59 which measures the pressure in the chamber 38, and the chiller unit 60 which supplies a refrigerant | coolant to the cooling system arrange | positioned in the ESC 39 are provided.

A mass flow controller (MFC) (not shown) is provided in the ammonia gas supply pipe 57, and the MFC adjusts the flow rate of the ammonia gas supplied to the first buffer chamber 45, and at the same time, the hydrogen fluoride gas supply pipe 58. ) MFC (not shown) is also provided, and the MFC adjusts the flow rate of the hydrogen fluoride gas supplied to the second buffer chamber 46. The MFC of the ammonia gas supply pipe 57 and the MFC of the hydrogen fluoride gas supply pipe 58 cooperate to adjust the volume flow rate ratio of the ammonia gas and the hydrogen fluoride gas supplied to the chamber 38.

In addition, a second process unit exhaust system 61 connected to a DP (Dry Pump) (not shown) is disposed below the second process unit 34. The second process unit exhaust system 61 is connected to the exhaust pipe 63 communicating with the exhaust duct 62 disposed between the chamber 38 and the APC valve 42, and to the lower side (the exhaust side) of the TMP 41. The exhaust pipe 64 is provided to exhaust gas and the like in the chamber 38. In addition, the exhaust pipe 64 is connected to the exhaust pipe 63 in front of the DP.

The third process unit 36 includes a nitrogen gas supply pipe 65 for supplying nitrogen (N ₂ ) gas to the chamber 50, a pressure gauge 66 for measuring the pressure in the chamber 50, and the chamber 50. The 3rd process unit exhaust system 67 which exhausts nitrogen gas etc. inside is provided.

An MFC (not shown) is provided in the nitrogen gas supply pipe 65, and the MFC adjusts the flow rate of the nitrogen gas supplied to the chamber 50. The third process unit exhaust system 67 communicates with the chamber 50 and is connected to the DP at the same time, the APC valve 69 disposed in the middle of the main exhaust pipe 68, and the main exhaust pipe 68. Branching so as to avoid the APC valve 69 from the side, and further connected to the main exhaust pipe 68 in front of the DP. The APC valve 69 controls the pressure in the chamber 50.

The second load lock unit 49 includes a nitrogen gas supply pipe 71 for supplying nitrogen gas to the chamber 70, a pressure gauge 72 for measuring pressure in the chamber 70, and nitrogen gas in the chamber 70. A second load lock unit exhaust system 73 for exhausting the back and the like and an atmospheric communication tube 74 for atmospherically opening the inside of the chamber 70 are provided.

An MFC (not shown) is provided in the nitrogen gas supply pipe 71, and the MFC adjusts the flow rate of the nitrogen gas supplied to the chamber 70. The second load lock unit exhaust system 73 serves as one exhaust pipe, which communicates with the chamber 70 and is connected to the main exhaust pipe 68 in the third process unit exhaust system 67 in front of the DP. Connected. In addition, the second load lock unit exhaust system 73 and the atmospheric communication tube 74 each have an open / close exhaust valve 75 and a relief valve 76, and the exhaust valve 75 and the relief valve 76 cooperate with each other. The pressure in the chamber 70 is adjusted from either atmospheric pressure to the desired degree of vacuum.

It is a figure which shows schematic structure of the unit air dry air supply system of the 2nd load lock unit in FIG.

4, the second load lock unit 49 of the unit driving dry air as dry air source of a supply system (77), air door door valve cylinder for driving a sliding door having a valve 55 for, N ₂ The exhaust valve of the relief valve 76 which the MFC which the nitrogen gas supply pipe 71 as a purge unit has, the atmospheric communication pipe 74 which is a relief unit for opening the atmosphere, and the 2nd load lock unit exhaust system 73 as a vacuum suction unit The gate valve cylinder for slide gate drive which 75 and the vacuum gate valve 54 have is applicable.

The unit driving dry air supply system 77 is connected to the sub dry air supply pipe 79 branched from the main dry air supply pipe 78 included in the second process apparatus 12 and the sub dry air supply pipe 79. And a first solenoid valve 80 and a second solenoid valve 81.

The first solenoid valve 80 is connected to the door valve cylinder, the MFC, the relief valve 76 and the gate valve cylinder via each of the dry air supply pipes 82, 83, 84, and 85, and the supply amount of dry air to these By controlling the control of each part. In addition, the second solenoid valve 81 is connected to the exhaust valve 75 via the dry air supply pipe 86 and operates the exhaust valve 75 by controlling the supply amount of dry air to the exhaust valve 75. To control.

The MFC in the nitrogen gas supply pipe 71 is also connected to the nitrogen (N ₂ ) gas supply system 87.

Moreover, the 2nd process unit 34 and the 3rd process unit 36 also have the same structure as the unit drive dry air supply system 77 of the 2nd load lock unit 49 mentioned above. A supply system is provided.

Referring back to FIG. 1, the substrate processing apparatus 10 includes a system controller for controlling operations of the first process apparatus 11, the second process apparatus 12, and the loader unit 13, and the loader unit 13. And an operation controller 88 disposed at one end in the longitudinal direction.

The operation controller 88 has a display section made of, for example, a liquid crystal display (LCD), which displays the operation status of each component of the substrate processing apparatus 10.

In addition, as shown in FIG. 5, the system controller includes an EC (Equipment Controller) 89, three MC (Module Controllers) 90, 91, and 92, an EC 89, and switching that connects each MC. And a hub 93. The system controller is a PC 171 as an MES (Manufacturing Execution System) that manages the entire manufacturing process in which the substrate processing apparatus 10 is installed via the LAN (Local Area Network) 170 from the EC 89. Is connected to. The MES, in conjunction with the system controller, feeds back real-time information about the process in the factory to the main work system (not shown), and executes the process decision in consideration of the load of the entire plant and the like.

EC 89 is a main control part (master control part) which controls each operation | movement of the board | substrate processing apparatus 10 as a whole. In addition, the EC 89 includes a CPU, a RAM, an HDD, and the like, and the CPU controls each MC according to the processing method of the wafer W designated by the user or the like in the operation controller 88, that is, the program corresponding to the recipe. By transmitting the signal, the operations of the first process device 11, the second process device 12, and the loader unit 13 are controlled.

The switching hub 93 changes the MC as the connection destination of the EC 89 according to the control signal from the EC 89.

The MCs 90, 91, and 92 are sub-controllers (slave controllers) that control the operations of the first process apparatus 11, the second process apparatus 12, and the loader unit 13, respectively. Each MC is connected to each I / O (input / output) module 97, 98, 99 via the GHOST network 95 by the DIST (Distribution) board 96, respectively. The GHOST network 95 is a network realized by LSI called General High-Speed Optimum Scalable Transceiver (GHOST) mounted on the MC board of the MC. A maximum of 31 I / O modules can be connected to the GHOST network 95. In the GHOST network 95, an MC corresponds to a master and an I / O module corresponds to a slave.

The I / O module 98 is composed of a plurality of I / O units 100 connected to each component (hereinafter referred to as an "end device") in the second process apparatus 12, and is provided to each end device. Control signal and output signal from each end device are transferred. The end device connected to the I / O unit 100 in the I / O module 98 includes, for example, an MFC and a hydrogen fluoride gas supply pipe 58 of the ammonia gas supply pipe 57 in the second process unit 34. MFC, pressure gauge 59 and APC valve 42, MFC of nitrogen gas supply pipe 65 in the third process unit 36, pressure gauge 66, APC valve 69, buffer arm 52 ) And MFC of the nitrogen gas supply pipe 71 in the second load lock unit 49, the pressure gauge 72 and the second transfer arm 37, and the unit air dry air supply system. The 1st solenoid valve 80, the 2nd solenoid valve 81, etc. in 77 correspond.

In addition, the I / O modules 97 and 99 have a configuration similar to that of the I / O module 98, and the connection between the MC 90 and the I / O module 97 corresponding to the first process apparatus 11 is performed. Relationship and the connection relationship between the MC 92 and the I / O module 99 corresponding to the loader unit 13 are also similar to the connection relationship between the MC 91 and the I / O module 98 described above. For this reason, description of these is omitted.

Each GHOST network 95 is also connected to an I / O board (not shown) that controls input and output of digital signals, analog signals, and serial signals in the I / O unit 100.

In the substrate processing apparatus 10, when performing the COR processing on the wafer W, the CPU of the EC 89 switches the switching hub 93, MC 91, and GHOST according to a program corresponding to the recipe of the COR processing. COR processing is performed in the second process unit 34 by transmitting a control signal to a desired end device via the I / O unit 100 in the network 95 and the I / O module 98.

Specifically, the CPU transmits control signals to the MFC of the ammonia gas supply pipe 57 and the MFC of the hydrogen fluoride gas supply pipe 58 to set the volume flow rate ratio of the ammonia gas and the hydrogen fluoride gas in the chamber 38 to a desired value. The pressure in the chamber 38 is adjusted to a desired value by transmitting control signals to the TMP 41 and the APC valve 42. Further, at this time, the pressure gauge 59 transmits the pressure value in the chamber 38 to the CPU of the EC 89 as an output signal, which is based on the pressure value in the transmitted chamber 38 to supply the ammonia gas supply pipe ( The control parameters of the MFC of 57), the MFC of the hydrogen fluoride gas supply pipe 58, the APC valve 42, and the TMP 41 are determined.

In addition, when performing a PHT process on the wafer W, the PHT in the 3rd process unit 36 transmits a control signal to the desired end device by the CPU of the EC 89 according to the program corresponding to the recipe of the PHT process. Run the process.

Specifically, the CPU adjusts the pressure in the chamber 50 to a desired value by transmitting control signals to the MFC and APC valve 69 of the nitrogen gas supply pipe 65, and transmits the control signal to the stage heater 51. The temperature of the wafer W is adjusted to a desired temperature. In addition, at this time, the pressure gauge 66 transmits the pressure value in the chamber 50 to the CPU of the EC 89 as an output signal, which is based on the pressure value in the transmitted chamber 50, and thus the APC valve 69. ) And the control parameters of the MFC of the nitrogen gas supply pipe 65.

In the system controller of FIG. 5, the I / O unit 100 connected to the plurality of end devices is modularized to form an I / O module without the plurality of end devices being directly connected to the EC 89. Since the I / O module is connected to the EC 89 via the MC and the switching hub 93, the communication system can be simplified.

The control signal transmitted by the CPU of the EC 89 includes the address of the I / O unit 100 connected to the desired end device, and the address of the I / O module including the I / O unit 100. Since the switching hub 93 refers to the address of the I / O module in the control signal, and the GHOST of the MC refers to the address of the I / O unit 100 in the control signal, the switching hub 93 It is possible to eliminate the need for the 93 and the MC to inquire the CPU of the control signal transmission destination, thereby realizing smooth transmission of the control signal.

By the way, in order to improve the positional accuracy at the time of manufacture, in order to improve the house light component of the solid state image pickup device as described above, the insulating film (SiO ₂ Film). In addition, it is necessary to prevent damage to the solid-state imaging device in thinning the insulating film.

In the substrate processing method according to the present embodiment, COR processing and PHT processing are performed on the wafer W in order to thin the insulating film without damaging the solid-state imaging element.

The COR treatment is a treatment that chemically reacts the oxide film of the workpiece with gas molecules to produce a product. The PHT treatment heats the workpiece to which the COR treatment has been applied, and generates a product on the workpiece by a chemical reaction of the COR treatment. It is a process which removes from a to-be-processed object by vaporizing and thermally oxidizing a product. As described above, since the COR treatment and the PHT treatment, particularly the COR treatment, are treatments for removing the oxide film of the object without using plasma and without using water components, plasma etching treatment and dry cleaning treatment (dry cleaning treatment). Corresponds to).

In the substrate processing method according to the present embodiment, ammonia gas and hydrogen fluoride gas are used as the gas. Here, the hydrogen fluoride gas is SiO ₂ Promotes corrosion of the layer and ammonia gas synthesizes a reaction by-product to finally limit the reaction between the oxide film and the hydrogen fluoride gas, as necessary. Specifically, in the COR treatment and the PHT treatment, by using the following chemical reaction, the upper layer of the insulating film made of SiO ₂ is removed to make the film thickness of the insulating film the desired film thickness.

(COR processing)

SiO ₂ + 4HF → SiF ₄ + 2H ₂ O ↑

SiF ₄ + 2NH ₃ + 2HF → (NH ₄ ) ₂ SiF ₆

(PHT processing)

(NH ₄ ) ₂ SiF ₆ → SiF ₄ ↑ + 2NH ₃ ↑ + 2HF ↑

It was confirmed by the present inventors that the COR treatment and PHT treatment using the above-described chemical reaction had the following characteristics. In the PHT treatment, a slight amount of N ₂ and H _{2 is} also generated.

1) The selectivity (removal rate) of thermal oxide film is high.

Specifically, the COR treatment and the PHT treatment have a high selectivity of the thermal oxide film, while a low selectivity of polysilicon. Therefore, SiO _{2 which is a} thermal oxide film SiO ₂ surface layer and film Similar SiO ₂ with the same properties as the film The layer can be removed efficiently. In addition, this similar SiO ₂ The layer is called a "damage layer" or a "sacrifice layer".

2) The growth rate of the native oxide film on the surface of the insulating film from which the surface layer or the like has been removed is slow.

Specifically, on the surface of the insulating film from which the upper layer was removed by wet etching, while the growth time of the natural oxide film having a thickness of 3 kPa was 10 minutes, on the surface of the insulating film from which the upper layer was removed by COR treatment and PHT treatment, the thickness was thick. The growth time of the 3 Å natural oxide film is 2 hours or more. Therefore, unnecessary oxide film does not arise in the manufacturing process of an electronic device, and the reliability of an electronic device can be improved.

3) The reaction proceeds in a dry environment.

Specifically, in the COR treatment, water is not used for the reaction, and since water generated by the COR treatment is also vaporized by the PHT treatment, no OH group is disposed on the surface of the insulating film from which the upper layer is removed. Therefore, since the surface of the insulating film does not become hydrophilic and the surface does not absorb moisture, it is possible to prevent a decrease in the wiring reliability of the electronic device.

4) The amount of product produced is saturated after a predetermined time.

Specifically, when a predetermined time elapses, even if the insulating film is subsequently exposed to a mixed gas of ammonia gas and hydrogen fluoride gas, the amount of product generated does not increase. The amount of product to be produced is determined by parameters of the mixed gas such as the partial pressure of the mixed gas, the volume flow rate ratio, parameters such as the pressure in the chamber 38 and the heating temperature in the stage heater 51. Therefore, control of the removal amount of the insulating film can be performed accurately and easily.

5) Particles are generated very little.

Specifically, in the second process unit 34 and the third process unit 36, even if the upper layer of the insulating film in the 2000 wafers W is removed, the chamber 38 and the chamber 50 may be removed. Hardly any particle adhesion is observed on the inner wall or the like. Therefore, in the electronic device, a short circuit of the wiring through the particles does not occur and the reliability of the electronic device can be improved.

Next, the processing method of the board | substrate which concerns on this embodiment is demonstrated.

In the present process, a manufacturing process of the electronic device, and executes a process of etching a film thickness of the insulating film formed by the SiO ₂ to a desired thickness. Specifically, in the manufacturing process of a CCD sensor as an electronic device, the process of etching the planarization film in which a color filter is formed, or the protective film of a color filter to a desired film thickness is performed.

6A and 6B show a schematic configuration of a CCD sensor to which a substrate processing method according to the present embodiment is applied, and FIG. 6A illustrates a device on a wafer W in a CCD sensor, and FIG. 6B. Is a partial cross-sectional view of a CCD sensor.

As shown in FIG. 6A, the CCD sensor 200 includes a wafer W, a photoelectric conversion element (chip) 210 as a plurality of light receiving portions provided in a matrix form on the wafer W, and a photoelectric conversion element 210. ), A plurality of vertical transfer registers 220 provided along each column in the longitudinal direction in the figure, and horizontally installed along the transverse direction in the figure of the photoelectric conversion element 210 above the figure of the vertical transfer register 220. The transfer register unit 230 and the output unit 240 connected to the horizontal transfer register unit 240 are provided.

The photoelectric conversion element 210 has a configuration of a photodiode, for example, and converts light incident on the light receiving surface into signal charges corresponding to the amount of light. The vertical transfer register unit 220 includes a switching element and wiring not shown, and receives signal charges accumulated in each photoelectric conversion element 210 through a read gate unit not shown and transmits them in the vertical direction. The horizontal transfer register unit 230 transmits the signal charges received from the vertical transfer register unit 220 in the horizontal direction to the output unit 240. The output unit 240 outputs the signal charge received from the horizontal transfer register unit 230 as an image signal.

In addition, as shown in FIG. 6B, on the wafer W, SiO _{2 is used.} An insulating film 251 made of an oxide film is formed, and the vertical transfer register part 220 includes a transfer electrode (signal charge transfer part) 221 and an interlayer insulating film 222 formed on the insulating film 251. A light shielding film 223 made of a metal such as aluminum formed to cover the 221 is provided. In addition, the CCD sensor 200 includes a silicon nitride film 252 as a protective film made of Si ₃ N ₄ formed on the wafer W so as to cover the photoelectric conversion element 210 and the vertical transfer register portion 220, and a silicon nitride film ( A planarization film 253 formed of an insulating material SiO ₂ having a refractive index lower than that of the silicon film 252 which is formed to cover the 252 and the planarized top surface, and a green color filter 255 formed on the planarization film 253. ), A color filter 254 composed of a red color filter 256 and a blue color filter 257, a protective film 258 made of an insulating material (SiO ₂ ) formed on the color filter 254, and a protective film 258. A microlens 259 formed above.

7A and 7B are diagrams showing a processing method of a substrate according to the present embodiment.

Subsequently, a description will be given of the case where the present process is performed to form the flattening film 253 in the CCD sensor 200 shown in FIGS. 6A and 6B. This process is performed also in the case of forming the protective film 258, but since it is processed similarly to the formation of the planarization film 253, description is abbreviate | omitted.

First, prior to this processing, an insulating film 251 is formed on the wafer W in which the photoelectric conversion element 210 is formed in a matrix shape, and a conductive film made of a conductive material such as polysilicon or amorphous silicon is formed and then transferred. A photoresist layer is formed on a predetermined pattern to form the electrode 221. Next, using this photoresist layer as a mask, the conductive film is etched by RIE processing to form the transfer electrode 221.

Next, an insulating film is formed to form the interlayer insulating film 222. Similarly, using the photoresist layer as a mask, the insulating film is etched by RIE processing to form the interlayer insulating film 222. Subsequently, in order to form the light shielding film 223, a conductive metal film is formed, and similarly using the photoresist layer as a mask, the insulating film 251 is etched by RIE processing to the immediate vicinity of the metal film and the photoelectric conversion element 210, and the light shielding film is formed. 223 and the hole 251a are formed. Then, a silicon nitride film 252 made of Si ₃ N ₄ is formed over the entire surface, and an insulating film 261 having a predetermined thickness made of SiO ₂ is formed over the entire surface (see FIG. 7A). The insulating film 261 is formed so as to have a film thickness thicker than the desired thickness of the planarizing film 253 so that the planarizing film 253 having a desired thickness is formed by the processing of the substrate.

First, in order to form the planarization film 253 of the desired thickness, the wafer W (see FIG. 7A) on which the insulating film 261 is formed is accommodated in the chamber 38 of the second process unit 34, and the chamber The pressure in the 38 is adjusted to a predetermined pressure, the ammonia gas, the hydrogen fluoride gas, and the argon (Ar) gas as a dilution gas are introduced into the chamber 38, and the atmosphere of the mixed gas including these in the chamber 38 is made. As a result, the insulating film 261 is exposed to the atmosphere of the mixed gas under a predetermined pressure (insulating film exposing step) (see FIG. 7B). As a result, SiO ₂ forming the insulating film 261 produces a product having a complex structure from ammonia gas and hydrogen fluoride gas, and deteriorates the upper layer of the insulating film 261 to a product layer 262 composed of the product. (See FIG. 7C).

Next, the wafer W on which the product layer 262 is formed is mounted on the stage heater 51 in the chamber 50 of the third process unit 36, and the pressure in the chamber 50 is set to a predetermined pressure. Then, nitrogen gas is introduced into the chamber 50 to generate a viscous flow, and the wafer W is heated to a predetermined temperature by the stage heater 51 (insulating film heating step). At this time, the complex structure of the product of the product layer 262 is decomposed by heat, and the product is separated into silicon tetrafluoride (SiF ₄ ), ammonia and hydrogen fluoride and vaporized (see FIG. 7D). These vaporized molecules are wound in viscous flow and are discharged from the chamber 50 by the third process unit exhaust system 67. As a result, the upper layer of the insulating film 261 is removed to form a planarization film 253 having a desired thickness (see Fig. 7E).

In the above processing, the film thickness of the planarization film 253 to be formed is determined by the thickness of the product layer 262. The amount of product generated is determined by the parameters of the mixed gas such as the partial pressure of the mixed gas of the ammonia gas and the hydrogen fluoride gas, the volume flow rate ratio of the hydrogen fluoride gas to the ammonia gas, the pressure in the chamber 38 and the wafer mounted on the stage heater 51 ( It is determined by parameters such as the heating temperature of W). For this reason, the thickness of the product layer 262 can be easily adjusted by controlling the parameter etc. of the above-mentioned mixed gas. Therefore, the planarization film 253 can be formed accurately to a desired thickness by controlling the parameters of the mixed gas such as the pressure of the mixed gas, the volume flow rate ratio and the like. Thereby, in the CCD sensor 200, the planarization film 253 can be thinned.

The method of adjusting the thickness of the product layer 262, that is, controlling the film thickness of the planarization film 253 will be described in detail. First, before the COR treatment is performed on the wafer W, the surface shape of the insulating film 261, for example, the CD value of the film thickness, is measured (pre-process shape measurement step). Subsequently, the CPU 89 of the EC 89 compares the measured value of the measured surface shape with the desired film thickness of the planarization film 253 set in advance, and the desired surface shape of the insulating film 261 and the desired planarization film 253. Based on the removal amount data indicating the relationship with the removal amount of the upper layer of the insulating film 261 regarding the film thickness, the COR processing condition parameter (first processing condition) and the PHT processing condition parameter (second processing condition) are determined (processing condition). Decision steps). The removal amount data described above is set in advance by an experiment, for example, and the removal amount data and data of the desired film thickness of the planarization film 253 are stored in advance in the storage unit of the EC 89. As described above, the COR treatment condition parameters include a partial pressure of the mixed gas of ammonia gas and hydrogen fluoride gas, a parameter of the mixed gas such as a volume flow rate ratio of the hydrogen fluoride gas to the ammonia gas, a pressure in the chamber 38, and the like. Examples of the PHT processing condition parameters include a heating temperature of the wafer W mounted on the stage heater 51. As a result, it is possible to accurately control the removal amount of the upper layer of the insulating film 261 (the growth amount of the film thickness of the product layer 262), so that the planarization film 253 can be formed accurately to a desired thickness, and the planarization film ( 253) can be thinned. In addition, the efficiency of thinning the planarization film 253 can be improved.

Next, the surface shape of the insulating film 261 after the COR treatment and the PHT treatment is measured (post-process shape measurement step). The CPU of the EC 89 compares the measured value of the measured surface shape with the desired film thickness of the planarization film 253 and based on the removal amount data described above, the COR processing condition parameter and PHT processing condition determined as described above. Change the parameter (process condition change step). Thereby, control of the removal amount of the upper layer of the insulating film 261 can also be performed correctly, and accordingly, the planarization film 253 can be formed correctly and desired thickness, and the planarization film 253 can be made thinner. In addition, the efficiency of thinning the planarization film 253 can be further improved.

In addition, before the COR processing is performed on the wafer W, the surface shape of the insulating film 261, for example, the CD value of the film thickness is measured, and the CPU of the EC 89 determines the measured value of the measured surface shape. On the basis of a predetermined relationship between the surface shape of the insulating film 261 and the processing condition parameter related to the removal amount of the upper layer of the insulating film 261, it is also preferable to determine the value of the processing condition parameter in the COR process or the PHT process. . As a result, it is possible to accurately control the removal amount of the upper layer of the insulating film 261 (the amount of growth of the film thickness of the product layer 262), whereby the planarization film 253 can be formed accurately to a desired thickness, and the planarization film 253 can be thinned. In addition, the efficiency of thinning the planarization film 253 can be improved.

The predetermined relationship is the surface of the insulating film 261 before and after performing the COR processing and the PHT processing measured by the first IMS 17 at the beginning of the lot processing the plurality of wafers W. FIG. It sets based on the difference of shape, ie, the removal amount of the upper layer of the insulating film 261 by COR processing and PHT processing, and the processing condition parameter in COR processing and PHT processing at this time. As the processing condition parameter, as described above, the pressure of the mixed gas of the ammonia gas and the hydrogen fluoride gas, the volume flow rate ratio of the hydrogen fluoride gas to the ammonia gas, the predetermined pressure in the chamber 38 and the stage heater 51 are mounted. The heating temperature of the wafer W, etc. correspond. The predetermined relationship thus set is stored in the HDD of the EC 89 or the like and referred to as the processing condition parameter as described above in the processing of the wafer W after the initial stage of the lot.

Further, based on the difference in the surface shape of the insulating film 261 before and after the COR processing and the PHT processing of a certain wafer W, the second COR processing and the PHT processing are performed on the wafer W. In the case where the second COR process and the PHT process are performed, the CPU of the EC 89 performs the COR process and the PHT process of the wafer W. Depending on the surface shape, the condition parameters of the COR treatment and the PHT treatment may be determined based on the predetermined relationship.

In addition, the surface shape of the insulating film 261 after performing the COR process and PHT process measured by the 1st IMS 17 is measured in the measurement point preset in each of the photoelectric conversion elements 210, and all Only when the insulating film 261 is removed to the desired film thickness at the measurement point, the wafer W may be transported in order to move to the next step. As a result, the yield rate of the CCD sensor 200 can be improved.

In the second process unit 34, since the hydrogen fluoride gas easily reacts with moisture, it is preferable to set the volume of the ammonia gas and the volume of the hydrogen fluoride gas in the chamber 38 to be larger than that. It is desirable to remove the water molecules in) as much as possible. Specifically, the volume flow rate (SCCM) ratio of the hydrogen fluoride gas to the ammonia gas in the mixed gas in the chamber 38 is preferably 1 to 1/2, and the predetermined pressure in the chamber 38 is 6.7 ×. ^10-2 ~ preferably from 4.0 Pa (0.5 ~ 30 mTorr) . Thereby, in order to stabilize the flow rate ratio of the mixed gas in the chamber 38, etc., production | generation of a product can be encouraged.

In addition, if the predetermined pressure in the chamber 38 is set to 6.7 × 10 ⁻² to 4.0 pa (0.5 to 30 mTorr), the amount of product generated can be saturated reliably after a predetermined period of time, whereby the etching depth (removal amount) Can be controlled reliably (self-limited). For example, when the predetermined pressure in the chamber 38 is 1.3 Pa (10 mTorr), the progress of etching stops after about 3 minutes from the start of the COR process. The etching depth at this time is approximately 15 nm. In addition, when the predetermined pressure in the chamber 38 is 2.7 Pa (20 mTorr), the progress of etching is stopped about 3 minutes after the start of the COR process. The etching depth at this time is approximately 24 nm.

In addition, since the reaction is accelerated in the vicinity of room temperature, it is preferable that the temperature of the ESC 39 on which the wafer W is mounted is set to 25 ° C by an internal temperature control mechanism (not shown). In addition, since the side products which generate | occur | produced in the chamber 38 to a high degree are hard to adhere, it is preferable that the inner wall temperature in the chamber 38 is set to 50 degreeC by the heater (not shown) embedded in the side wall.

In the third process unit 36, the reactant is a complex compound containing a coordination bond, and the complex compound has a weak bonding force, and thermal decomposition is promoted even at a relatively low temperature, so that the predetermined temperature of the wafer W is 80-. It is preferable that it is 200 degreeC, and it is preferable that the time which PHT process is given to the wafer W is 60-180 second. In order to generate viscous flow in the chamber 50, it is not desirable to increase the degree of vacuum in the chamber 50, and a gas flow with a constant flow rate is required. Therefore, the predetermined pressure in the chamber 50 is preferably 6.7x10 to 1.3x10 ² Pa (500 mTorr to 1 Torr), and the flow rate of nitrogen gas is preferably 500 to 3000 SCCM. Thereby, since viscous flow can be reliably produced in the chamber 50, gas molecules produced by the thermal decomposition of the product can be reliably removed.

In the wafer W on which the planarization film 253 is formed by this process, the color filter 254 is formed next, and the protective film 258 is formed by this process similarly to the formation of the planarization film 253 described above. The microlens 259 is formed, and the CCD sensor 200 is manufactured.

As described above, according to the method for processing a substrate according to the present embodiment, in order to form the planarization film 253 having a desired thickness, the wafer W on which the insulating film 261 having a predetermined thickness of SiO ₂ is formed has a predetermined pressure. Below, the wafer W exposed to the atmosphere of the mixed gas consisting of ammonia gas, hydrogen fluoride gas, and argon gas, and exposed to the atmosphere of the mixed gas is heated to a predetermined temperature. As a result, a product having a complex structure is formed of SiO ₂ , ammonia gas, and hydrogen fluoride gas forming the insulating film 261, thereby producing a product layer 262 having a desired thickness. In the resulting product, the complex structure of the product is decomposed by heat, and the product is separated and vaporized into silicon tetrafluoride, ammonia and hydrogen fluoride. By vaporizing this product, the product layer 262 of the upper layer of the insulating film 261 can be removed, and the planarization film 253 of desired thickness can be formed.

At this time, the amount of production of the product, that is, the thickness of the product layer 262 is a parameter of the mixed gas such as the pressure of the mixed gas of ammonia gas and hydrogen fluoride gas, the volume flow rate ratio of the hydrogen fluoride gas to the ammonia gas, and the chamber 38. It can control by parameters, such as an internal pressure, the heating temperature of the wafer W mounted in the stage heater 51, and the like. Therefore, the thickness of the product layer 262 produced | generated by controlling parameters, such as a mixed gas, can be controlled correctly, and control of the removal amount of the insulating film 261 can be performed correctly. As a result, by the isotropic etching, the planarization film 253 can be formed accurately to a desired thickness, and the planarization film 253 can be thinned. For this reason, the light condensing property of the CCD sensor 200 can be improved, and the sensitivity of the photoelectric conversion element 210 can be improved, and in the manufacture of the CCD sensor 200, alignment of the upper components with respect to the base device is carried out. You can run it correctly.

In addition, since the amount of production of the product is saturated after a predetermined time, not all of the insulating film 261 is removed in this process. Therefore, the fall of the wiring reliability of the CCD sensor manufactured from the wafer W can be prevented.

In addition, according to the substrate processing method according to the present embodiment, since the plasma etching treatment is performed on the wafer W to remove the upper layer of the insulating film 261, the CCD sensor 200 manufactured from the wafer W, Since charges do not accumulate in the gate electrode, it is possible to prevent deterioration and destruction of the gate oxide film, and energy particles are not irradiated to the electronic device, thereby preventing the occurrence of crystal defects in the CCD sensor 200. In addition, since an unexpected chemical reaction due to plasma does not occur, it is possible to prevent the generation of impurities, thereby preventing contamination of the chamber 38 and the chamber 50.

In addition, according to the substrate processing method of the present embodiment, since the dry cleaning process is performed on the wafer W to remove the upper layer of the insulating film 261, the change in the physical properties of the surface of the wafer W can be suppressed. In addition, the degradation of the wiring reliability in the CCD sensor 200 manufactured from the wafer W can be prevented reliably.

Therefore, according to the processing method of the board | substrate which concerns on this embodiment, control of the removal amount of an insulating film can be performed correctly, without damaging an electronic device. As a result, the insulating film can be thinned.

As described above, the substrate processing method according to the present embodiment is not limited to the case where the planarization film forming the color filter of the CCD sensor or the protective film of the color filter is formed to a desired thickness, and is applied to other electronic devices. It is also applicable to the case where the thickness of the insulating film made of SiO ₂ is accurately formed to a desired thickness. For example, the processing method of the present substrate can be applied to thinning of the insulating film or the interlayer insulating film formed directly on the wafer W.

In addition, the method of processing the substrate according to the present embodiment is not limited to use for manufacturing a CCD sensor as described above, but is a thin film for CCD having an insulating thin film of another electronic device, for example, at least on the surface thereof. What may be used in order to manufacture a device etc. may be used.

In addition, a CCD sensor is not limited to the CCD sensor 200 mentioned above, It may have a different structure. For example, the CCD sensor 200 may include a light transmitting electrode made of an amorphous thin film formed by the CVD method instead of the silicon nitride film 252.

This invention is not limited to embodiment mentioned above, For example, the manufacturing method of the electronic device provided with the processing method of the above-mentioned board | substrate, the manufacturing method of a solid-state image sensor, and the manufacturing method of the thin film device for CCD may be sufficient.

8 is a plan view illustrating a schematic configuration of a first modification of the substrate processing apparatus to which the substrate processing method according to the present embodiment is applied. In addition, in FIG. 8, the same code | symbol is attached | subjected to the same component as the component in the substrate processing apparatus 10 of FIG. 1, and the description is abbreviate | omitted.

In FIG. 8, the substrate processing apparatus 137 includes a hexagonal transfer unit 138 in plan view, four process units 139 to 142 disposed radially around the transfer unit 138, and It is provided between the loader unit 13, the transfer unit 138, and the loader unit 13, and has two load lock units 143 and 144 connecting the transfer unit 138 and the loader unit 13 to each other. .

The internal pressure of the transfer unit 138 and each of the process units 139 to 142 is maintained in a vacuum, and the transfer unit 138 and each of the process units 139 to 142 respectively pass through the vacuum gate valves 145 to 148. Connected.

In the substrate processing apparatus 137, the internal pressure of the loader unit 13 is maintained at atmospheric pressure, while the internal pressure of the transfer unit 138 is maintained at vacuum. Therefore, each load lock unit 143, 144 has the vacuum gate valves 149, 150 in the connection part with the transfer unit 138, respectively, and the standby door valve 151 in the connection part with the loader unit 13, respectively. 152, it is comprised as a vacuum preliminary conveyance chamber which can adjust the internal pressure. Each of the load lock units 143 and 144 has wafer mounting tables 153 and 154 for temporarily mounting the wafers W exchanged between the loader unit 13 and the transfer unit 138.

The transfer unit 138 has a transfer leg type transfer arm 155 configured to be bent and pivotable disposed therein, and each of the transfer arms 155 has respective process units 139 to 142. The wafer W is transported between the load lock units 143 and 144.

Each process unit 139-142 is equipped with the mounting base 156-159 which mounts the wafer W in which processing is performed, respectively. Here, the process unit 140 has the same configuration as the first process unit 25 in the substrate processing apparatus 10, and the process unit 141 has the same configuration as the second process unit 34, The process unit 142 has the same configuration as the third process unit 36. Therefore, the process unit 140 performs the RIE process on the wafer W, the process unit 141 performs the COR process on the wafer W, and the process unit 142 performs the PHT process on the wafer W. It can be carried out.

In the substrate processing apparatus 137, a wafer in which an insulating film 261 having a predetermined thickness of SiO ₂ is formed in order to form the planarization film 253 or the protective film 258 having a desired thickness, as in the substrate processing apparatus 10 described above ( W) (see FIG. 7A) is carried in to the process unit 141 to carry out the COR process, and also to the process unit 142 to carry out the PHT process, thereby executing the substrate processing method according to the above-described embodiment. .

In addition, the operation of each component in the substrate processing apparatus 137 is controlled by the system controller which has the same structure as the system controller in the substrate processing apparatus 10.

9 is a plan view showing a schematic configuration of a second modification of the substrate processing apparatus to which the substrate processing method according to the present embodiment is applied. In addition, in FIG. 9, the same code | symbol is attached | subjected to the component same as the component in the substrate processing apparatus 10 of FIG. 1, and the substrate processing apparatus 137 of FIG. 8, and the description is abbreviate | omitted.

9, two process units 161 and 162 are added to the substrate processing apparatus 137 of FIG. 8, and the shape of the transfer unit 163 is also corresponding to the substrate processing apparatus 137 of FIG. It is different from the shape of the transfer unit 138 in the processing apparatus 137. The two additional process units 161, 162 are connected to the transfer unit 163 via the vacuum gate valves 164, 165, respectively, and have mounts 166, 167 of the wafer W.

In addition, the transfer unit 163 includes a transfer arm unit 168 composed of two scalar arm type transfer arms. The transfer arm unit 168 moves along the guide rail 169 disposed in the transfer unit 163, and is located between each of the process units 139 to 142, 161 and 162 or between the load lock units 143 and 144. Wafer W is conveyed.

In the substrate processing apparatus 160, similar to the substrate processing apparatus 137, the wafer W on which the insulating film 261 having a predetermined thickness of SiO ₂ is formed to form the planarization film 253 or the protective film 258 having a desired thickness. ) (See FIG. 7A) is carried out to the process unit 141 to carry out COR processing, and also to the process unit 142 to carry out PHT processing, thereby executing the substrate processing method according to the above-described embodiment.

In addition, the operation of each component in the substrate processing apparatus 160 is also controlled by the system controller which has the same structure as the system controller in the substrate processing apparatus 10.

In addition to the so-called semiconductor devices, the above-mentioned electronic devices also include nonvolatile or large-capacity memory devices having thin films made of insulating metal oxides such as ferroelectrics and high dielectric materials, in particular, materials having a perovskite crystal structure. do. Examples of the material having a perovskite crystal structure include lead zirconate titanate (PZT), barium strontium titanate (BST), and niobium strontium bismuth tantalate (SBNT).

In addition, an object of the present invention is to supply a system or apparatus (EC 89) with a recording medium on which program code of software for realizing the functions of the above-described embodiments is supplied to a computer (or CPU or MPU) of the EC 89. Etc.) is achieved by reading out and executing the program code stored in the recording medium.

In this case, the program code itself read out from the recording medium realizes the functions of the above-described embodiment, and the program code and the recording medium on which the program code is recorded constitute the present invention.

As a recording medium for supplying the program code, for example, a floppy disk, a hard disk, a magneto-optical disk, a CD-ROM, a CD-R, a CD-RW, a DVD-ROM, a DVD-RAM, a DVD-RW Optical discs, such as DVD + RW, magnetic tapes, nonvolatile memory cards, ROMs, and the like. In addition, the program code may be downloaded via a network.

In addition, by executing the program code read by the computer, not only the function of the present embodiment is realized but also an OS (operating system) or the like operating on the computer based on the instruction of the program code is part of the actual processing. Or when all of them are performed and the above-described functions of the present embodiment are realized.

Also, after the program code read from the recording medium is written into the memory provided in the function expansion board inserted into the computer or the function expansion unit connected to the computer, the expansion function is changed according to the instruction of the program code. This includes the case where a CPU or the like provided in the expansion unit performs part or all of the actual processing and the above-described functions of the present embodiment are realized by the processing.

The program code may be in the form of an object code, a program code executed by an interpreter, or script data supplied to an OS.

According to the manufacturing method of the solid-state image sensor of this invention, the insulating film of the board | substrate of a solid-state image sensor is exposed to the atmosphere of the mixed gas containing ammonia and hydrogen fluoride below a predetermined pressure, and was exposed to the atmosphere of the mixed gas. It is heated to a predetermined temperature. When the insulating film is exposed to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride below a predetermined pressure, a product based on the insulating film and the mixed gas is generated, and the insulating film exposed to the atmosphere of the mixed gas is heated to a predetermined temperature. The resulting product is heated to vaporize. By vaporization of this product, the upper layer of the insulating film can be removed. At this time, the production amount of the product, that is, the removal amount (film thickness) of the upper layer of the insulating film can be accurately controlled by the parameter of the mixed gas. In addition, exposure to a mixed gas and heating do not damage each element with which the board | substrate of a solid-state image sensor is equipped. Therefore, there is an effect that it is possible to accurately control the removal amount of the insulating film without damaging the solid-state imaging device made of the substrate, thereby making it possible to thin the insulating film.

Claims (17)

In the manufacturing method of a solid-state image sensor, An insulating film exposure step of exposing the insulating film of the substrate of the solid-state imaging device to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride at a predetermined pressure or less; Heating the insulating film exposed to the atmosphere of the mixed gas to a predetermined temperature; Solid-state image sensor manufacturing method. The method of claim 1, The insulating film exposing step may be performed by performing a plasma etching process on the substrate. The manufacturing method of a solid-state image sensor. The method of claim 1, The insulating film exposing step may be performed by performing a dry cleaning process on the substrate. The manufacturing method of a solid-state image sensor. The method of claim 1, Determining a shape of the insulating film, and determining a product generation condition for determining at least one of the volume flow rate ratio of the hydrogen fluoride with respect to the ammonia in the mixed gas, and the predetermined pressure according to the measured shape. doing The manufacturing method of a solid-state image sensor. The method of claim 1, The volume flow rate ratio of the hydrogen fluoride to the ammonia in the mixed gas is 1 to 1/2, and the predetermined pressure is 6.7 x 10 ^-2 to 4.0 pa. The manufacturing method of a solid-state image sensor. The method of claim 1, The predetermined temperature is 80 ~ 200 ℃ The manufacturing method of a solid-state image sensor. In the manufacturing method of a solid-state image sensor, A film thickness determining step of determining a desired film thickness of the insulating film included in the substrate of the solid-state imaging device; A shape measurement step before processing of measuring the shape of the insulating film; A treatment condition determining step of comparing the measured shape with the determined film thickness to determine a first treatment condition and a second treatment condition; An insulating film exposure step of exposing the insulating film to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure based on the first processing condition; Heating the insulating film exposed to the atmosphere of the mixed gas to a predetermined temperature based on the second processing condition. The manufacturing method of a solid-state image sensor. The method of claim 7, wherein A post shape measurement step of measuring a shape of the insulating film after the insulating film heating step; And a processing condition changing step of changing the first processing condition and the second processing condition by comparing the measured shape with the determined film thickness in the post-process shape measurement step. The manufacturing method of a solid-state image sensor. The method of claim 7, wherein The first processing condition is at least one of a volume flow rate ratio of the hydrogen fluoride to the ammonia in the mixed gas, and the predetermined pressure, and the second processing condition is the predetermined temperature. The manufacturing method of a solid-state image sensor. A plurality of photoelectric conversion elements provided in a matrix form on the substrate, an insulating film formed on the substrate on which the plurality of photoelectric conversion elements are installed, a signal charge transfer electrode formed adjacent to the photoelectric conversion element and composed of a switching element and a wiring; And a light shielding film comprising an interlayer insulating film formed on the signal charge transfer electrode and a metal film formed on the signal charge transfer electrode via the interlayer insulating film. A metal film deposition step of forming the metal film to form the light shielding film; A resist patterning step of forming a resist having a predetermined pattern for forming the light shielding film on the formed metal film; A patterning step of forming the light shielding film and the holes by patterning the insulating film by dry etching to the vicinity of the metal film and the photoelectric conversion element using the resist; A resist removal step of removing the resist; A silicon nitride film forming step of forming a silicon nitride film into a recess defined by the light shielding film and the hole; A flattening film forming step of applying a transparent insulating material having a lower refractive index than the silicon nitride film to form a first insulating layer and simultaneously flattening the first insulating layer to form a flattening film; A color filter forming step of forming a color filter on the planarization film; Forming a protective film by forming a second insulating layer on the color filter and simultaneously thinning the second insulating layer; The insulating film exposing step of forming the planarizing film and forming the protective film exposing the first insulating layer and the second insulating layer to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure; An insulating layer heating step of heating the first insulating layer and the second insulating layer exposed to an atmosphere of a predetermined temperature, respectively; The manufacturing method of a solid-state image sensor. In the manufacturing method of a solid-state image sensor, A light receiving portion forming step of forming a plurality of light receiving portions that generate signal charges on the substrate in accordance with the light to be received; An insulating film forming step of forming an insulating film on the substrate on which the light receiving portion is formed; A signal charge transfer unit forming step of forming a signal charge transfer unit for transferring the signal charges obtained from the plurality of light receiving units; A light shielding film forming step of forming a conductive light shielding film on the signal charge transfer unit; A light transmitting electrode forming step of forming a light transmitting electrode made of an amorphous silicon based thin film on the plurality of light receiving parts and directly on the light blocking film via the insulating film, The insulating film forming step includes an insulating material coating step of coating an insulating material on a substrate on which the light receiving portion is formed to form the insulating film, and the coated insulating material in an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure. Exposing the insulating film to be exposed; and heating the insulating material exposed to the atmosphere of the mixed gas to a predetermined temperature. The manufacturing method of a solid-state image sensor. In the manufacturing method of the thin film device for CCD provided with the some chip | tip which has the same shape pattern formed on the board | substrate, and the insulating thin film which is optically transparent at least on the surface, A film forming step of forming an insulating film to form the thin film; A film exposure step of exposing the insulating film to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride below a predetermined pressure; A film heating step of heating the insulating film exposed to the atmosphere of the mixed gas to a predetermined temperature; A film inspection step of performing inspection on a predetermined condition of the heated insulating film at a predetermined inspection point in each of the plurality of chips; And a conveyance step of conveying the thin film device to move to the next step when the insulating film satisfies the predetermined condition at the inspection point in the respective chips in the film inspection step. The manufacturing method of the thin film device for CCD. A recording medium on which a program for causing a computer to execute a processing method of a substrate is recorded. An insulation film exposure module for exposing the insulation film provided on the substrate to a atmosphere of a mixed gas containing ammonia and hydrogen fluoride at a predetermined pressure or less; And an insulation film heating module for heating the insulation film exposed to the atmosphere of the mixed gas to a predetermined temperature. The recording medium which recorded the program which makes a computer execute the processing method of a board | substrate. A recording medium having recorded thereon a program for causing a computer to execute a method for manufacturing a solid-state imaging device, A film thickness determining module for determining a desired film thickness of the insulating film included in the substrate of the solid-state imaging device; A shape measuring module before processing for measuring the shape of the insulating film; A processing condition determination module for comparing the measured shape with the determined film thickness to determine a first processing condition and a second processing condition; An insulating film exposure module for exposing the insulating film to a atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure based on the first processing condition; And a module for heating the insulating film exposed to the atmosphere of the mixed gas to a predetermined temperature based on the second processing condition. The recording medium which recorded the program which makes a computer execute the manufacturing method of a solid-state image sensor. A plurality of photoelectric conversion elements provided in a matrix form on the substrate, an insulating film formed on the substrate on which the plurality of photoelectric conversion elements are installed, a signal charge transfer electrode formed adjacent to the photoelectric conversion element and composed of a switching element and a wiring; And a recording medium for recording a program for causing a computer to execute a method for manufacturing a solid-state imaging element, the light shielding film comprising an interlayer insulating film formed on the signal charge transfer electrode and a metal film formed on the signal charge transfer electrode via the interlayer insulating film. To A metal film deposition module for forming the metal film to form the light shielding film; A resist patterning module for forming a resist having a predetermined pattern for forming the light shielding film on the formed metal film; A patterning module that forms the light shielding film and the holes by patterning the insulating film by dry etching to the vicinity of the metal film and the photoelectric conversion element using the resist; A resist removal module for removing the resist; A silicon nitride film forming module for forming a silicon nitride film into a recess defined by the light shielding film and the hole; A planarization film forming module for applying a transparent insulation material having a lower refractive index than the silicon nitride film to form a first insulation layer and simultaneously planarizing the first insulation layer to form a planarization film; A color filter forming module for forming a color filter on the planarization film; A protective film forming module for forming a protective film by forming a second insulating layer on the color filter and simultaneously thinning the second insulating layer; The insulating film exposing module, wherein the planarization film forming module and the protective film forming module expose the first insulating layer and the second insulating layer to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure; An insulation layer heating module for heating the first insulation layer and the second insulation layer exposed to an atmosphere of a predetermined temperature, respectively; The recording medium which recorded the program which makes a computer execute the manufacturing method of a solid-state image sensor. A recording medium having recorded thereon a program for causing a computer to execute a method for manufacturing a solid-state imaging device, A light receiving unit formation module for forming a plurality of light receiving units on the substrate for generating signal charges according to the light to be received; An insulating film forming module for forming an insulating film on a substrate on which the light receiving part is formed; A signal charge transfer unit formation module for forming a signal charge transfer unit for transferring the signal charges obtained from the plurality of light receiving units; A light shielding film formation module for forming a conductive light shielding film on the signal charge transfer unit; A light transmitting electrode forming module for forming a light transmitting electrode made of a thin film of amorphous silicon based on the plurality of light receiving parts through the insulating film and directly on the light blocking film by CVD; The insulating film forming module includes an insulating material coating module for coating an insulating material on a substrate on which the light receiving portion is formed to form the insulating film, and the coated insulating material in an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure. And an insulation film exposing module for exposing and an insulation material heating module for heating the insulation material exposed to the atmosphere of the mixed gas to a predetermined temperature. The recording medium which recorded the program which makes a computer execute the manufacturing method of a solid-state image sensor. A recording medium having recorded thereon a program for causing a computer to execute a method of manufacturing a thin film device for a CCD having a plurality of chips having the same shape pattern formed on a substrate and at least an optically transparent insulating thin film on the surface thereof. A film forming module for forming an insulating film to form the thin film; A film exposure module for exposing the insulating film to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride below a predetermined pressure; A membrane heating module for heating the insulating film exposed to the atmosphere of the mixed gas to a predetermined temperature; A film inspection module for inspecting a predetermined condition of the heated insulating film at a predetermined inspection point in each of the plurality of chips; And a conveyance module for conveying the thin film device in order to move to the next step when the insulating film satisfies the predetermined condition at the inspection point of each chip in the film inspection module. The recording medium which recorded the program which makes a computer execute the manufacturing method of the thin film device for CCD.

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