KR20060020097A - Exposer - Google Patents

Abstract

An exposure apparatus for shortening an exposure process time and improving productivity of a display device is disclosed. The exposure apparatus includes a mask portion having a mask pattern for forming a plurality of exposure patterns on a substrate by a plurality of light sources and exposure lights generating a plurality of exposure light having different projection angles, In one exposure shot process, multiple exposure patterns are simultaneously formed on a substrate. Therefore, since a plurality of exposure patterns are simultaneously formed on the substrate in one exposure shot process, the movement of a light source for forming a plurality of exposure patterns is significantly reduced, thereby reducing the time required for the entire exposure process. .

Description

Exposure apparatus {EXPOSER}

1 is a view schematically showing an exposure apparatus according to a first embodiment of the present invention.

FIG. 2 is a view schematically illustrating an exposure principle of the exposure apparatus shown in FIG. 1.

FIG. 3A is a diagram illustrating an example of a mask illustrated in FIG. 2.

3B is a diagram illustrating another example of the mask illustrated in FIG. 2.

4 is a view schematically showing an exposure apparatus according to a second embodiment of the present invention.

5 is a schematic view of an exposure apparatus according to a third embodiment of the present invention.

* Description of the symbols for the main parts of the drawings *

100: substrate 110: stage

120: mask 130: first lighting unit

140: second lighting unit

The present invention relates to an exposure apparatus, and more particularly, to an exposure apparatus for shortening an exposure process time and improving productivity of a display device.

In general, a liquid crystal display device includes a thin film transistor (hereinafter, referred to as TFT) as a switching element, a TFT substrate having a gate line to which a scan signal is applied, and a data line to which an image signal is applied, a color filter, and a common electrode. A liquid crystal display panel including a color filter substrate and a liquid crystal interposed between both substrates to determine whether light is transmitted as an electrical signal is applied thereto. The liquid crystal display may further include a backlight assembly configured to provide light to the liquid crystal display panel.

When the liquid crystal display device having the above structure is configured with a large area of 15 inches or more, an exposure apparatus capable of exposing a large area substrate at one time to form patterns such as TFTs, gate lines, and data lines is preferable. However, due to various factors such as technical limitations in manufacturing the exposure apparatus, the size of the exposure surface that can be exposed at one time is inevitably limited.

Thus, the exposure apparatus moves a light source providing exposure light to form the pattern on the substrate, and performs an iterative exposure shot process accordingly.

However, the above-described method has a problem in that the time required to move the light source increases as the substrate is enlarged, thereby increasing the overall exposure process time.

 Accordingly, an object of the present invention is to provide an exposure apparatus for shortening the movement time of a light source for providing exposure light.

The present invention for achieving the above object is a mask portion having a plurality of light sources for generating a plurality of exposure light having a different projection angle and a mask pattern for forming a plurality of exposure patterns on the substrate by the exposure light And a plurality of exposure patterns are simultaneously formed on the substrate in one exposure shot process by the exposure lights.

According to such an exposure apparatus, since a plurality of exposure patterns are simultaneously formed on a substrate in one exposure shot process, the movement of a light source for forming a plurality of exposure patterns is significantly reduced, thereby reducing the time required for the entire exposure process. Can be reduced.

Hereinafter, an exposure apparatus according to a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings.

Example-1

FIG. 1 is a view schematically showing an exposure apparatus according to a first embodiment of the present invention, and FIG. 2 is a view schematically showing an exposure principle of the exposure apparatus shown in FIG.

As shown in FIG. 1, the exposure apparatus according to the first embodiment of the present invention includes a stage 110, a mask 120, and a first lighting unit 130 providing exposure light on which the substrate 100 is positioned. And a second lighting unit 140.                     

The mask 120 is positioned on the substrate 100 and has a mask pattern for forming a predetermined exposure pattern on the substrate 100 by the exposure light provided from the first and second lighting units 130 and 140.

In addition, the first and second lighting units 130 and 140 are positioned on the mask 120, the first lighting unit 130 generates the first exposure light, and the second lighting unit 140 generates the second exposure light. In this case, the first exposure light and the second exposure light have different projection angles. Accordingly, the first and second lighting units 130 and 140 simultaneously form two exposure patterns on the substrate 100 corresponding to the mask patterns formed on the mask 120 in one exposure shot process.

This will be described in more detail with reference to FIG. 2 as follows.

As shown in FIG. 2, the first exposure light 200 generated by the first illumination unit 130 of FIG. 1 and the second exposure light 210 generated by the second illumination unit 140 are different projections. Has an angle.

Accordingly, the first exposure light 200 is illuminated on the mask 120, and the first exposure light 200 reaching the substrate 100 corresponding to the mask pattern formed on the mask 120 is the mask pattern. To form a first exposure pattern 220.

In addition, the second exposure light 210 is illuminated on the mask 120, and the second exposure light 210 reaching the substrate 100 corresponding to the mask pattern formed on the mask 120 is the mask pattern. To form a second exposure pattern 230. In this case, the first and second exposure patterns 220 and 230 are formed in different areas on the substrate 100.

As such, two exposure patterns, that is, first and second exposure patterns 220 and 230, are formed on the substrate 100 by the first and second exposure light 200 and 210 in one exposure shot process.

Therefore, when two exposure patterns are to be formed, the first exposure pattern is formed by the exposure light generated by the light source positioned at the first position, and then the light source is moved to the second position again. The second exposure pattern is formed by the exposure light generated again. As a result, it takes time according to the movement of the light source. In the present invention, two exposure patterns may be formed in one exposure shot process, and thus, the time required for the movement of the light sources, that is, the first and second lighting units 130 and 140. Can be reduced by half compared to the conventional one.

Although the first and second lighting units 130 and 140, that is, the case where two light sources are configured as an example, have been described as an example, they may be configured with more than two light sources.

On the other hand, the mask 120 has a different mask pattern in the center region and the peripheral region.

3A is a plan view illustrating an example of a mask illustrated in FIG. 2.

Referring to FIG. 3A, the mask 120 has a first mask pattern 300 formed in a central region and a second mask pattern 310 formed in a peripheral region surrounding the central region. In this case, the second mask pattern 310 has a smaller shape than the first mask pattern 300 in order to pass relatively little exposure light than the first mask pattern 300.

As such, the reason for forming the second mask pattern 310 formed in the peripheral area of the mask 120 smaller than the first mask pattern 300 formed in the center area is as follows.

That is, in FIG. 2, the first exposure pattern 220 and the second exposure pattern 230 formed to correspond to the mask pattern of the mask 120 may be formed by the first exposure light 200 and the second exposure light 210. It is exposed at the same time. Therefore, in the boundary region of the first and second exposure patterns 220 and 230, the first and second exposure light 200 and 210 are exposed twice or by diffraction and interference of adjacent first and second exposure light 200 and 210. By this, more exposure dose than the central region can be projected.

As such, in order to prevent a larger exposure amount than the central area from being projected in the peripheral areas of the first and second exposure patterns 220 and 230, the mask 120 corresponding to the peripheral areas of the first and second exposure patterns 300 and 310 may be formed. 2, the mask pattern 310 is formed to be smaller to reduce the exposure amount reaching the substrate 100 through the mask 120.

On the other hand, the mask pattern for reducing the exposure amount in the peripheral region of the mask can be configured in various forms.

In the above description, the first mask pattern and the second mask pattern have a rectangular shape, but may have various shapes such as a triangular shape and a circular shape. Further, although the second exposure pattern is formed on each of four sides of the central region, the second exposure pattern may be formed only on one side or two sides facing each other.

3B is a diagram illustrating another example of the mask illustrated in FIG. 2.

Referring to FIG. 3B, the mask 120 has a third mask pattern 320 formed in the center region and a fourth mask pattern 330 having a slit pattern formed in the peripheral region surrounding the center region.

As such, as the fourth mask pattern 330 formed in the peripheral area of the mask 120 is formed in the slit pattern shape, the exposure amount passing through the peripheral area of the mask 120 is relatively reduced compared to the center area.

Example-2

4 is a view schematically showing an exposure apparatus according to a second embodiment of the present invention.

As shown in FIG. 4, the exposure apparatus according to the second embodiment of the present invention includes a stage 410, an illumination unit 420, a mask 430, a mirror 440, and a mirror on which the substrate 400 is located. Control unit 450 is included.

The lighting unit 420 is positioned above the mask 430 and provides exposure light to the substrate 400. At this time, the lighting unit 420 is not moved, and provides the exposure light to the substrate 400 in a fixed state.

In addition, the mask 430 has a mask pattern for forming a predetermined exposure pattern on the substrate 400 by the exposure light provided from the illumination unit 420.

The mirror 440 illuminates the mask 430 by adjusting a path of the exposure light provided from the illumination unit 420. At this time, the mirror 440 is rotated by the mirror adjusting unit 450 to adjust the projection angle of the exposure light is illuminated on the mask 430.

That is, the mirror 440a having the first rotational angle rotated by the mirror adjusting unit 450 adjusts the path of the exposure light provided by the lighting unit 420 to generate the first exposure light 460. In addition, the mirror 440b, which is rotated by the mirror adjusting unit 450 and has a second rotational angle, adjusts a path of the exposure light provided from the lighting unit 420 to have a projection angle different from that of the first exposure light 460. 2 exposure light 470 is generated.                     

Accordingly, the first exposure light 460 is illuminated on the mask 430, and the first exposure light 460 reaching the substrate 400 corresponding to the mask pattern formed on the mask 430 is the mask pattern. To form a first exposure pattern 480.

In addition, the second exposure light 470 is illuminated on the mask 430, and the second exposure light 470 transmitted corresponding to the mask pattern formed on the mask 430 is a second exposure corresponding to the mask pattern. Pattern 490 is formed. In this case, the first and second exposure patterns 470 and 480 are formed in different areas on the substrate 400.

As such, the first and second exposure light 460 and 470 generated by the rotation of the mirror 440 on the substrate 400 may cause two exposure patterns, that is, the first and second exposure patterns 480 and 490 in one exposure shot process. ) Is formed.

Therefore, when two exposure patterns are to be formed, the first exposure pattern is formed by the exposure light generated by the illumination unit 420, and then the illumination unit 420 is moved again, and the illumination unit 420 is generated again. The second exposure pattern is formed by the exposed exposure light. For this reason, it takes time according to the movement of the lighting unit 420. In the present invention, two exposure patterns can be formed in one exposure shot process by rotating the mirror 440, so that the movement of the lighting unit 420 is required. The time required can be reduced by half.

In the above example, the mirror 440 is adjusted to have the first and second rotation angles. However, the mirror 440 may be adjusted to have a plurality of rotation angles, so that a plurality of exposure patterns may be simultaneously processed through a single exposure shot process. Can be formed.

In addition, the second embodiment of the present invention is an example in which two exposure patterns are simultaneously formed through one exposure shot process by adjusting the rotation angle of the mirror 440, but mirrors having different rotation angles are used. By forming two, two exposure patterns may be simultaneously formed through one exposure shot process.

Meanwhile, the mask 430 has a mask pattern as shown in FIG. 3A or 3B to allow a relatively small exposure amount to pass in the peripheral region compared to the central region.

Example-3

5 is a schematic view of an exposure apparatus according to a third embodiment of the present invention.

As shown in FIG. 5, the exposure apparatus according to the third exemplary embodiment of the present invention includes a stage 510, a first lighting unit 520, a second lighting unit 530, and a first mask disposed on the substrate 500. 540 and second mask 550.

The first lighting unit 520 is positioned above the first mask 540, and the second lighting unit 530 is positioned above the second mask 540. In this case, the first lighting unit 520 provides the first exposure light 560 to the first mask 540, and the second lighting unit 530 provides the second exposure light 570 to the second mask 550. do.

The first mask 540 and the second mask 550 are positioned on the substrate 500, and are exposed on the substrate 500 by the first exposure light 560 and the second exposure light 570, respectively. It has a mask pattern for forming a pattern.

Accordingly, the first exposure light 560 is illuminated on the first mask 540 and the first exposure light 560 reached on the substrate 500 in correspondence with the mask pattern formed on the first mask 540. Forms a first exposure pattern 580 corresponding to the mask pattern.

In addition, the second exposure light 570 is illuminated on the second mask 550, and the second exposure light 570 that reaches the substrate 500 corresponding to the mask pattern formed on the second mask 550. To form a second exposure pattern 590 corresponding to the mask pattern. In this case, the first and second exposure patterns 580 and 590 are formed in different regions on the substrate 500.

In this way, the first and second exposure light 560 and 570 generated by the first and second illumination units 52 and 530 on the substrate 500 in one exposure shot process, that is, two exposure patterns, that is, the first and second exposure patterns. 580, 590 are formed.

Therefore, when two exposure patterns are to be formed, the first exposure pattern is formed by the exposure light generated by the light source positioned at the first position, and then the light source is moved to the second position again. The second exposure pattern is formed by the exposure light generated again. For this reason, it takes time according to the movement of the light source. In the present invention, two exposure patterns may be formed in one exposure shot process, so that the time required for the movement of the light sources, that is, the first and second lighting units 520 and 530. Can be reduced by half compared to the conventional one.

Although the first and second lighting units 520 and 530 and the first and second masks 540 and 550 are formed as an example, more than two lighting units may be formed and the same number of masks may be correspondingly formed. Can be formed.

As described above, the present invention configures a plurality of lighting units to generate a plurality of exposure patterns through a single exposure shot process, or rotate the mirror to generate a plurality of exposure light having different projection angles. Meanwhile, the present invention includes a plurality of lighting units and a plurality of masks corresponding thereto.

Therefore, the present invention can form a plurality of exposure patterns on the substrate through a single exposure shot process, the movement of the lighting unit is reduced compared to the conventional, thereby reducing the time required to move the lighting unit.

Therefore, the present invention can reduce the time required for the movement of the illumination unit for generating the exposure light, and can reduce the time required for the entire exposure process, thereby improving the productivity of the display device.

Although the present invention has been described with reference to the embodiments, those skilled in the art may variously modify and change the present invention without departing from the spirit and scope of the invention as set forth in the claims below. You will understand.

Claims (8)

A plurality of light sources for generating a plurality of exposure lights having different projection angles; And A mask portion having a mask pattern for forming a plurality of exposure patterns on a substrate by the exposure lights, And providing the exposure lights on the substrate such that the plurality of exposure patterns are simultaneously formed on the substrate in one exposure shot process by the exposure lights. The light source of claim 1, wherein the light source includes an illumination unit for generating light for forming the exposure light, and a mirror unit for generating the plurality of exposure light by adjusting a projection angle of the light. And the lighting unit includes a plurality of lights each generating exposure light having different projection angles. The light source of claim 1, wherein the light source includes an illumination unit for generating light for forming the exposure light, and a mirror unit for generating the plurality of exposure light by adjusting a projection angle of the light. The mirror unit includes a plurality of mirrors having different rotation angles corresponding to the projection angle of the plurality of exposure light. The light source of claim 1, wherein the light source includes an illumination unit for generating light for forming the exposure light, and a mirror unit for generating the plurality of exposure light by adjusting a projection angle of the light. The mirror unit A mirror for generating the plurality of exposure lights; And And a mirror adjusting unit configured to adjust the mirror to have a rotation angle corresponding to a projection angle of the plurality of exposure lights. The exposure apparatus of claim 1, wherein the mask unit includes a plurality of masks that simultaneously form the plurality of exposure patterns on the substrate in one exposure shot process by the plurality of exposure lights. The method of claim 1, wherein the mask pattern is A first pattern formed in a central region and providing the exposure light to form a central portion of the exposure pattern; And And a second pattern formed in the peripheral region surrounding the central region, the second pattern providing relatively less exposure light than the first pattern for forming the peripheral portion surrounding the central portion of the exposure pattern. The exposure apparatus of claim 6, wherein the second pattern has a shape relatively smaller than that of the first pattern. The exposure apparatus of claim 6, wherein the second pattern has a slit pattern shape.

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