KR20050119586A - Copolymer for chemically amplified photoresist having cyclododecyl pedant group and preventing acid from diffusing into non-exposed areas, and chemically amplified photoresist composition including the same - Google Patents

Abstract

Excellent etch resistance even under short exposure source, high sensitivity due to capture and release of acid generated and diffused in the exposed part, excellent sensitivity of pattern damage such as line edge roughness, adhesion to substrate The present invention discloses a polymer for chemically amplified photoresist and a chemically amplified photoresist composition comprising the same, which is excellent in stability and yield characteristics of a semiconductor device. The polymer is And Repeating units represented by (n, a and c are as defined in the specification).

Description

Copolymer for chemically amplified photoresist having cyclododecyl pedant group and preventing acid from diffusing into non-exposed areas, and chemically amplified photoresist composition including the same}

The present invention relates to a polymer for chemically amplified photoresist and a chemically amplified photoresist composition comprising the same, more particularly, an acid having excellent etching resistance under a short wavelength exposure source, and collecting acid generated and diffused in an exposed portion. And chemically amplified photoresist polymers, which have excellent sensitivity due to excellent sensitivity, improved pattern damage such as line edge roughness, and excellent adhesion to substrates, and excellent stability and yield characteristics of semiconductor devices. It relates to a chemically amplified photoresist composition comprising the same.

With the high integration of semiconductor integrated circuit devices, the development of gigabit DRAMs having higher capacity than the dynamic random access memory (hereinafter referred to as DRAM) having the conventional 256 megabit class storage capacity, and the finer than the conventional 0.25 ㎛ line width There is a demand for development of a polymer for chemically amplified photoresist and a chemically amplified photoresist composition capable of forming a photoresist pattern having a line width. In general, the functional mechanism of the photoresist composition in the photolithography process for manufacturing a semiconductor is as follows. That is, by irradiating the photoresist film coated on the surface of the semiconductor circuit board with light of an exposure source through a photomask inscribed with a semiconductor circuit design drawing, the latent image of the photomask is transferred to the resist film, and the latent image transferred photoresist film is transferred. By heating the acid in the exposed portion to depolymerize or deprotect the main chain or side chain of the matrix polymer for photoresist, or crosslinking the matrix polymer, solubility difference in the developer between the exposed portion and the non-exposed portion is reduced. It enlarges and forms a predetermined photoresist pattern through subsequent processes, such as a developing process.

On the other hand, in order to form a photoresist pattern finer than 0.25 μm line width as described above, deep ultraviolet rays such as ArF (193 nm) and F ₂ (157 nm) excimer lasers, which are short wavelength exposure sources of less than 250 nm, are deep in a photolithography process. Since an ultra violet) exposure source is used, the chemically amplified photoresist composition used under the extreme ultraviolet exposure source must (i) have low absorbance of the light to be exposed, (ii) have excellent sensitivity, and ) Etch resistance should be excellent, (ⅳ), and pattern damage such as line edge roughness (LER), top loss, and slope should not occur in the photoresist pattern. (Iii) good adhesion to semiconductor circuit boards; However, the (meth) acrylate resin initially developed as a polymer for ArF chemically amplified photoresist has a problem of good transparency but low etching resistance, and a photo containing conventional COMA (cyclic olefin / maleic anhydride). The resist composition has good etching resistance but still suffers from a difficult dry etching process.

On the other hand, in the case of chemically amplified photoresist, pattern damage such as line edge roughness, top loss and slope phenomenon is liable to occur due to nonuniform diffusion of acid generated by exposure and heterogeneous dissolution in the developing process. In order to prevent this, the basic amine or amide compound included in the photoresist composition may bind to the acid generated in the exposed portion and prevent the acid from diffusing into the non-exposed portion, but the photoresist has a high absorption of an extreme wavelength exposure source of 250 nm or less. Degrading the sensitivity of the composition causes a problem of lowering the stability of the process by lowering the stability and yield characteristics of the semiconductor device during subsequent processing.

Accordingly, an object of the present invention is to provide a chemically amplified photoresist polymer having excellent etching resistance even under a short wavelength exposure source and a chemically amplified photoresist composition comprising the same.

It is another object of the present invention to capture and re-emit an acid generated and diffused in an exposure part during an exposure process and a post exposure delay (PED) period even under a short wavelength exposure source, thereby providing excellent sensitivity. Chemically amplified photoresist polymer which improves the damage phenomenon of the pattern such as edge roughness, and has excellent adhesion to the substrate, excellent stability and yield characteristics of the semiconductor device, and excellent stability of the manufacturing process of the semiconductor device, and It is to provide a chemically amplified photoresist composition comprising.

In order to achieve the above object, the present invention provides a polymer for chemically amplified photoresist composition comprising a repeating unit represented by the following formula (1) and (2).

[Formula 1]

[Formula 2]

 In Chemical Formulas 1 and 2, n is an integer of 1 to 5, a and c are mol% of the repeating units with respect to the total repeating units forming the polymer, and are 1-20mol% and 10-40mol%, respectively.

Hereinafter, the present invention will be described in more detail.

The polymer for chemically amplified photoresist composition according to the present invention includes repeating units represented by the following Chemical Formulas 1 and 2.

 In Chemical Formulas 1 and 2, n is an integer of 1 to 5, a and c are mol% of the repeating units with respect to the total repeating units forming the polymer, and are 1-20mol% and 10-40mol%, respectively.

The remaining repeating units constituting the photoresist polymer according to the present invention together with the repeating units represented by Formulas 1 and 2 may preferably be repeating units having an acid-sensitive protecting group. As a dissolution inhibiting group which is bound to the side chain and can be detached by an acid, in the non-exposed part, the dissolution of the photoresist composition to the developer is suppressed, and in the exposed part, it is deprotected by the catalysis of the acid generated in the photoacid generator It increases the solubility in the general alkaline developing solution to increase the solubility difference between the exposed portion and the non-exposed portion. The acid-sensitive protecting group can be used without limitation so long as it can perform the above role, for example, t -butyl, tetrahydropyran-2-yl, 2-methyl tetrahydropyran-2-yl, Tetrahydrofuran-2-yl, 2-methyl tetrahydrofuran-2-yl, 1-methoxypropyl, 1-methoxy-1-methylethyl, 1-ethoxypropyl, 1-ethoxy-1-methylethyl , 1-methoxyethyl, 1-ethoxyethyl, t -butoxyethyl, 1-isobutoxyethyl or 2-acetylment-1-yl and the like can be used.

Preferred examples of the polymer for chemically amplified photoresist composition according to the present invention are polymers represented by the following general formula (3), and more preferred examples are polymers represented by the following general formulas (3a to 3f).

In Formula 3, R ^* , R ₁ and R ₂ are each independently H or CH ₃ , R ₃ is CH ₃ or C ₂ H ₅ , R ₄ is C ₁ ~ C ₂₀ Alkyl, C ₅ ~ C ₂₀ cycloalkyl, C ₁ ~C ₂₀ hydroxyalkyl, a C ₅ ~C ₁₀ including a group of the C ₁ ~C ₂₀ alkyl having a halogen substituent hydroxy, ether or ester, alkyl, or an ether group or an ester C ₅ to C ₁₀ cycloalkyl included in the ring, n is an integer of 1 to 5, a, b, c and d are the mole% of each repeating unit with respect to the entire monomer constituting the polymer, each 1 ~ 20mol%: 1-30mol%: 10-40mol%: 10-60mol%.

In Formulas 3a to 3f, a, b, c, and d are as defined in Formula 3.

Since the polymer for a chemically amplified photoresist composition according to the present invention comprises a cyclododecyl pendant group which is a bulky aliphatic cyclized hydrocarbon, it improves the dry etching resistance of the chemically amplified photoresist composition comprising the polymer. In addition, since the polymer contains ethyleneoxy structural units, the polymer has excellent acid or cationic ability, and a plurality of oxygen regularly arranged lone electron pairs of oxygen are densely packed in a narrow space, thereby providing a considerable degree of basicity due to the cooperative effect. Since the photoacid composition is a buffer for capturing and releasing acid diffused from the photoacid generator in the exposed portion, the photoresist composition is excellent in sensitivity, and the acid generated in the exposed portion can diffuse into the non-exposed portion. Surface damage such as a line edge roughness phenomenon, a top loss phenomenon in which the shape of the pattern is distorted, and a width increase from the upper portion to the lower portion of the pattern can be prevented. In addition, since the polymer is a multi-oxygen-containing compound including an ethylene oxy structural unit that acts as a phase transfer catalyst between the organic layer and the aqueous solution layer, the photoresist composition including the polymer causes smooth contact between the organic layer and the aqueous solution layer. It can improve the line edge roughness that may occur during the process. In addition, since the polymer has a strong bonding force with the silicon oxide film formed on the semiconductor circuit board, it is possible to improve the adhesion to the substrate.

The preparation of the polymer for chemically amplified photoresist composition according to the present invention comprises a) dissolving the monomers represented by the following formulas (4) and (5), and the monomers represented by maleic anhydride and the following formula (6), if necessary, in a polymerization solvent. , b) a polymerization initiator is added to the mixture solution, and c) the mixture solution to which the initiator is added may be prepared by reacting at a temperature of 60 to 70 ° C. for 4 to 24 hours under a nitrogen or argon atmosphere. Preferably, the polymerization may be performed by a radical polymerization reaction, a solution polymerization reaction, a bulk polymerization reaction or a polymerization reaction using a metal catalyst. In addition, the preparation method includes the step (c) crystallization of the reaction product using a lower alcohol, water, a mixture thereof, and the like, including diethyl ether, hexane, petroleum ether, methanol, ethanol or isopropanol It may also include.

In Formulas 4 to 6, R ^* , R ₁ , R ₂ , R ₃ , R ₄ and n are as defined in Formulas 1 to 3.

As the polymerization solvent, a polymerization solvent commonly known in the art may be widely used. Examples of the polymerization solvent may include cyclohexanone, cyclopentanone, tetrahydrofuran, dimethylformamide, dimethylsulfoxide, dioxane, methylethylketone, benzene, toluene, xylene, or mixtures thereof. The polymerization initiator may also be used a wide range of initiators commonly known in the art, for example, benzoyl peroxide, 2,2'-azobisisobutyronitrile (AIBN), acetyl peroxide, lauryl peroxide, t -Butyl peracetate, t-butylhydroperoxide, di-t-butylperoxide, or mixtures thereof can be used. The prepared polymer preferably has a weight average molecular weight of 3,000 to 100,000. If the weight average molecular weight is out of the above range, the physical properties of the photoresist film may be lowered, or the formation of the photoresist film may be difficult, and the contrast of the pattern may be lowered.

The chemically amplified photoresist composition according to the present invention comprises a) a polymer comprising repeating units represented by Formulas 1 and 2, b) a photoacid generator for generating an acid, and c) an organic solvent. It may further include an additive.

The photoacid generator of b) generates an acid component such as H ⁺ by exposure and induces chemical amplification, and any compound that can generate an acid by light may be used. As the photoacid generator, a sulfide salt or an onium salt compound may be preferably used, and more preferably, phthalimidotrifluoromethane sulfonate having low light absorption under an exposure source of 157 nm and 193 nm. ), Dinitrobenzyltosylate, n-decyl disulfone, naphthylimido trifluoromethane sulfonate, or mixtures thereof. In addition, as said photo-acid generator, diphenyl iodo hexafluorophosphate, diphenyl iodo hexafluoro arsenate, diphenyl iodo hexafluoro antimonate, diphenyl paramethoxyphenyl sulfonium triflate, diphenyl paratoluene Nylsulfonium triflate, diphenylparaisobutylphenylsulfonium triflate, triphenylsulfonium hexafluoro arsenate, triphenylsulfonium hexafluoro antimonate, triphenylsulfonium triflate and dibutylnaphthylsulfonium Photoacid generators selected from the group consisting of triflate may also be used. The content of the photoacid generator is preferably used in 0.05 to 10% by weight based on the polymer for chemically amplified photoresist. When the content of the photoacid generator is less than 0.05% by weight, the amount of acid components generated by exposure is small and the sensitivity to the exposure source is weak, so that the protection of the protecting group may be difficult. When the content of the photoacid generator exceeds 10% by weight, the resist composition may occur. The increase in the far-ultraviolet absorbance of causes a slope of the pattern, and there is a problem in that a large amount of acid is generated to obtain a pattern having a bad cross section.

C) As the organic solvent constituting the remaining components of the photoresist composition according to the present invention can be used a wide variety of organic solvents commonly used in the preparation of the photoresist composition. As such an organic solvent, methyl 3-methoxypropionate, ethyl 3-ethoxypropionate, propylene glycol monomethyl ether acetate, cyclohexanone, 2-heptanone, mixtures thereof and the like can be preferably used. have. The organic solvent is preferably used at a ratio of 500 to 2000% by weight relative to the polymer for photoresist. When the organic solvent is less than 500% by weight, the photoresist film may be too thick to collapse the photoresist pattern. Too thin can cause line edge roughness in the etching process. Preferably, the organic solvent is used in an amount of 1000 wt% based on the chemically amplified photoresist polymer, in which case the thickness of the photoresist film is about 0.25 μm.

Using the chemically amplified photoresist composition according to the present invention, a photoresist pattern may be formed by the following method.

First, a) a thin film is formed by applying a chemically amplified photoresist composition according to the present invention on a etched layer such as a silicon wafer or an aluminum substrate by using a spin coater, and b) exposing a short wavelength light source to the formed thin film. Then, c) the exposed photoresist film is heated as necessary, and d) the heated resist film is developed to form a photoresist pattern.

The method of forming the photoresist pattern may further include a prebake process of heating the applied resist film after the a) coating process and b) before the exposure process, and the exposed photo of the prebaking process and c). It is preferable that the heating process of a resist consists of 70 degreeC-200 degreeC. When the heating temperature is less than 70 ° C, the organic solvent included in the photoresist composition may not be sufficiently evaporated. When the heating temperature exceeds 200 ° C, the photoresist composition may be thermally decomposed.

B) In the exposure process, an exposure source may use not only ArF but also KrF, Extreme Ultra Violet (EUV), Vacuum Ultra Violet (VUV), E-beam, X-ray, Immersion lithography, or ion beam. The exposure process may be performed at an exposure energy of preferably 1 to 100 mJ / cm ² . It is difficult and the amount of acid less chemical amplification action generated from the photo acid generator is the exposure energy is less than 1 mJ / cm ² first, in the heating step the amount of acid increases the post-exposure is caused when it exceeds 100mJ / cm ² far unexposed area acid Can spread in.

In the d) development process, the developer may be a developer commonly known in the art, and preferably an alkaline developer, more preferably an aqueous TMAH solution. The concentration of the developer is preferably 0.01 to 5% by weight.

Hereinafter, the present invention will be described in more detail with reference to specific examples. The following examples are intended to illustrate the present invention more specifically, but the scope of the present invention is not limited by the following examples.

Example 1 Preparation of Polymer for Chemically Amplified Photoresist (Formula 3a)

Compound represented by the formula (0.01mol), maleic anhydride (0.025mol), 1-methyl-1-cyclododecyl methacrylate (0.03mol), 2-methyl-2-adamantyl methacryl The rate (0.025 mol) and AIBN (0.2 g) were dissolved in tetrahydrofuran (60 ml) and then reacted at 67 ° C. for 14 hours. After the reaction was completed, the reaction product was distilled under reduced pressure, and the vacuum distilled polymer was precipitated in methanol and filtered to obtain a polymer represented by Chemical Formula 3a (yield: 56%).

Example 2 Preparation of Polymer for Chemically Amplified Photoresist (Formula 3b)

Compound represented by the formula (0.01mol), maleic anhydride (0.025mol), 1-methyl-1-cyclododecyl methacrylate (0.03mol), 2-ethyl-2-adamantyl methacryl The rate (0.025 mol) and AIBN (0.2 g) were dissolved in tetrahydrofuran (60 ml) and then reacted at 67 ° C. for 14 hours. After the reaction was completed, the reaction product was distilled under reduced pressure, and the vacuum distilled polymer was precipitated in methanol / nucleic acid and filtered to obtain a polymer represented by Chemical Formula 3b (yield: 62%).

Example 3 Preparation of Polymer for Chemically Amplified Photoresist (Formula 3c)

Compound represented by the formula (0.01mol), maleic anhydride (0.025mol), 1-methyl-1-cyclododecyl methacrylate (0.03mol), 2-isopropyl-2-adamantyl meta Crylate (0.025 mol) and AIBN (0.2 g) were dissolved in tetrahydrofuran (60 ml) and then reacted at 67 ° C. for 14 hours. After the reaction was completed, the reaction product was distilled under reduced pressure, and the vacuum distilled polymer was precipitated in methanol / nucleic acid and filtered to obtain a polymer represented by Chemical Formula 3c (yield: 64%).

Example 4 Preparation of Polymer for Chemically Amplified Photoresist (Formula 3d)

Compound represented by the formula (0.01mol), maleic anhydride (0.025mol), 1-methyl-1-cyclododecyl methacrylate (0.03mol), gamma-butyrolactone methacrylate (0.02mol ) And AIBN (0.2 g) were dissolved in tetrahydrofuran (60 ml) and then reacted at 67 ° C. for 14 hours. After the reaction was completed, the reaction product was distilled under reduced pressure, and the polymer distilled under reduced pressure was precipitated in methanol / nucleic acid and filtered to obtain a polymer represented by Chemical Formula 3d (yield: 69%).

Example 5 Preparation of Polymer for Chemically Amplified Photoresist (Formula 3e)

Compound represented by the formula (0.01mol), maleic anhydride (0.025mol), 1-methyl-1-cyclododecyl methacrylate (0.03mol), 5-hydroxy adamantyl-1yl meta Crylate (0.02 mol) and AIBN (0.2 g) were dissolved in tetrahydrofuran (60 ml) and then reacted at 67 ° C. for 14 hours. After the reaction was completed, the reaction product was distilled under reduced pressure, and the vacuum distilled polymer was precipitated in methanol / nucleic acid and filtered to obtain a polymer represented by Chemical Formula 3e (yield: 73%).

Example 6 Preparation of Polymer for Chemically Amplified Photoresist (Formula 3f)

Compound represented by the formula (0.01mol), maleic anhydride (0.025mol), 1-methyl-1-cyclododecyl methacrylate (0.03mol), methacryloyloxy-norbornylene-buty Lolactone (0.01 mol) and AIBN (0.2 g) were dissolved in tetrahydrofuran (60 ml) and then reacted at 67 ° C. for 14 hours. After the reaction was completed, the reaction product was distilled under reduced pressure, and the polymer distilled under reduced pressure was precipitated in methanol / nucleic acid and filtered to obtain a polymer represented by Chemical Formula 3f (yield: 53%).

Example 7 Preparation of Chemically Amplified Photoresist Composition Comprising a Polymer Represented by Chemical Formula 3a and Formation of Photoresist Pattern

The propylene glycol monomethyl ether acetate obtained from Example 1, the polymer represented by the formula (3a) and the phthalimidotrifluoromethanesulfonate (0.024 g) and triphenylsulfonium triflate (0.06 g) as photoacid generators It was dissolved in (PGMEA) (20 g) and filtered through a 0.20 μm filter to obtain a photoresist composition. The resultant resist composition was spin-coated on top of the silicon wafer to form a photoresist film, and then heated in an oven or hot plate at 130 ° C. for 90 seconds, and the heated resist film was exposed to ArF laser (exposure energy = 30 mJ / cm ² ). Then heated again at 130 ° C. for 90 seconds. The heated resist film was immersed in a 2.38 wt% TMAH aqueous solution for 40 seconds and developed to form an L / S pattern of 80.4 nm, and an electron scanning micrograph of the formed photoresist pattern is shown in FIG. 1.

Example 8 Preparation of Chemically Amplified Photoresist Composition Comprising a Polymer Represented by Chemical Formula 3b and Formation of Photoresist Pattern

A photoresist composition was prepared in the same manner as in Example 7, except that the polymer (2 g) obtained in Example 2 was used instead of the polymer obtained in Example 1 and the exposure energy was 34 mJ / cm ² . An L / S pattern of 79.7 nm was formed using the composition, and an electron scanning micrograph of the formed photoresist pattern is shown in FIG. 2.

Example 9 Preparation of Chemically Amplified Photoresist Composition Containing Polymer Represented by Chemical Formula 3c and Formation of Photoresist Pattern

A photoresist composition was prepared in the same manner as in Example 7, except that the polymer (2 g) obtained in Example 3 was used instead of the polymer obtained in Example 1 and the exposure energy was 31 mJ / cm ² . An L / S pattern of 80.2 nm was formed using the composition, and an electron scanning micrograph of the formed photoresist pattern is shown in FIG. 3.

Example 10 Preparation of Chemically Amplified Photoresist Composition Comprising a Polymer Represented by Chemical Formula 3d and Formation of Photoresist Pattern

A photoresist composition was prepared in the same manner as in Example 7, except that the polymer (2 g) obtained in Example 4 was used instead of the polymer obtained in Example 1 and the exposure energy was 35 mJ / cm ² . An L / S pattern of 79.3 nm was formed using the composition, and an electron scanning micrograph of the formed photoresist pattern is shown in FIG. 4.

Example 11 Preparation of Chemically Amplified Photoresist Composition Comprising a Polymer Represented by Chemical Formula 3e and Formation of Photoresist Pattern

A photoresist composition was prepared in the same manner as in Example 7, except that the polymer (2 g) obtained in Example 5 was used instead of the polymer obtained in Example 1 and the exposure energy was 39 mJ / cm ² . An L / S pattern of 79.5 nm was formed using the composition, and an electron scanning micrograph of the formed photoresist pattern is shown in FIG. 5.

Example 12 Preparation of Chemically Amplified Photoresist Composition Containing Polymer Represented by Chemical Formula 3f and Formation of Photoresist Pattern

A photoresist composition was prepared in the same manner as in Example 7, except that the polymer (2 g) obtained in Example 6 was used instead of the polymer obtained in Example 1 and the exposure energy was 40 mJ / cm ² . An L / S pattern of 79.8 nm was formed using the composition, and an electron scanning micrograph of the formed photoresist pattern is shown in FIG. 6.

The polymer for chemically amplified photoresist and the chemically amplified photoresist composition comprising the same according to the present invention have an advantage of excellent etching resistance even under a short wavelength exposure source. In addition, the polymer and the chemically amplified photoresist composition including the same are excellent in sensitivity because they can capture and release the acid generated and diffused in the exposed portion even under a short wavelength exposure source, and have excellent sensitivity such as line edge roughness. The advantage is that the phenomenon can be improved. In addition, the polymer and the chemically amplified photoresist composition including the same have the advantage of excellent adhesion to the substrate. Therefore, the polymer and the chemically amplified photoresist composition including the same have excellent stability and yield characteristics of the semiconductor device and can improve the stability of the manufacturing process of the semiconductor device.

1 to 6 are electron scanning micrographs of the photoresist patterns formed in Examples 7 to 12, respectively.

Claims (8)

A polymer for chemically amplified photoresist comprising a repeating unit represented by the formula (1) and (2). [Formula 1] [Formula 2]  In Chemical Formulas 1 and 2, n is an integer of 1 to 5, a and c are mol% of the repeating units with respect to the total repeating units forming the polymer, and are 1-20mol% and 10-40mol%, respectively. According to claim 1, wherein the polymer is a chemically amplified photoresist polymer represented by the formula (3). [Formula 3] In Formula 3, R ^* , R ₁ and R ₂ are each independently H or CH ₃ , R ₃ is CH ₃ or C ₂ H ₅ , R ₄ is C ₁ ~ C ₂₀ Alkyl, C ₅ ~ C ₂₀ cycloalkyl, C ₁ ~C ₂₀ hydroxyalkyl, a C ₅ ~C ₁₀ including a group of the C ₁ ~C ₂₀ alkyl having a halogen substituent hydroxy, ether or ester, alkyl, or an ether group or an ester C ₅ to C ₁₀ cycloalkyl included in the ring, n is an integer of 1 to 5, a, b, c and d are the mole% of each repeating unit with respect to the entire monomer constituting the polymer, each 1 ~ 20mol%: 1-30mol%: 10-40mol%: 10-60mol%. The polymer amplified photoresist of claim 1, wherein the polymer is selected from the group represented by the following Chemical Formulas 3a to 3f. [Formula 3a] [Formula 3b] [Formula 3c] [Formula 3d] [Formula 3e] [Formula 3f] In Formulas 3a to 3f, a, b, c, and d are as defined in Formula 3. The chemically amplified photoresist composition of claim 1, wherein the polymer has a weight average molecular weight of 3,000 to 100,000. Chemically amplified photoresist composition comprising a polymer, a photoacid generator and an organic solvent for a chemically amplified photoresist represented by the formula (1). 6. The photoacid generator according to claim 5, wherein the photoacid generator is phthalimidotrifluoromethanesulfonate, dinitrobenzyltosylate, n-decyldisulfone, naphthylimidotrifluoromethanesulfonate diphenyl iodo salt hexafluorophosphate, di Phenylureate hexafluoro arsenate, diphenylureate hexafluoro antimonate, diphenylparamethoxyphenylsulfonium triflate, diphenylparatoluenylsulfonium triflate, diphenylparaisobutylphenylsulfonium triflate , Triphenylsulfonium hexafluoro arsenate, triphenylsulfonium hexafluoro antimonate, triphenylsulfonium triflate, dibutylnaphthylsulfonium triflate and mixtures thereof The chemically amplified photoresist composition. The chemically amplified photoresist composition of claim 5, wherein the content of the photoacid generator is 0.05 to 10 wt% based on the polymer for chemically amplified photoresist. The organic solvent of claim 5, wherein the organic solvent is selected from the group consisting of methyl 3-methoxy propionate, ethyl 3-ethoxypropionate, propylene glycol methyl ether acetate, cyclohexanone, 2-heptanone, and mixtures thereof. The content of the organic solvent is selected from the chemically amplified photoresist composition is 500 to 2000% by weight based on the polymer for a chemically amplified photoresist.