KR20050112381A - Method for manufacturing a waveguide by using dummy pattern - Google Patents

Abstract

The present invention relates to a method for manufacturing an optical waveguide using a dummy pattern, wherein a cladding layer and a core layer are laminated on an upper substrate, and the core layer is etched to form a core pattern defining an optical waveguide region and at the same time around the core pattern. A dummy pattern separated at regular intervals is formed, a protective film pattern masking the core pattern is formed, and the protective film pattern is removed after removing the dummy pattern. Therefore, according to the present invention, the side profile of the optical waveguide core pattern may be vertically formed by adding a dummy pattern around the core pattern to increase the pattern density around the core pattern to increase the etching selectivity between the photoresist and the etching target layer.

Description

Manufacturing method of optical waveguide using dummy pattern {METHOD FOR MANUFACTURING A WAVEGUIDE BY USING DUMMY PATTERN}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an optical waveguide, and more particularly, a dummy capable of vertically implementing an etch profile while preventing lateral damage of a core layer by reducing an etching loss of a pattern during an optical waveguide etching process. A method of manufacturing an optical waveguide using a pattern.

In general, a medium through which a photon is used as a means of information transmission in an optical communication system is called an optical waveguide. An optical waveguide is called a core where the light passes and a cladding is a part that surrounds the core to allow total reflection of the light.

In such an optical communication system, alignment between an optical fiber and a semiconductor device having an optical waveguide structure is important and a manufacturing process is required to minimize core surface irregularities of the optical waveguide in order to reduce light loss.

1A to 1C are vertical cross-sectional views illustrating a process of manufacturing an optical waveguide according to the prior art. Referring to these drawings, a conventional optical waveguide manufacturing method is as follows.

As shown in FIG. 1A, a cladding layer 12 and a core layer 14 are sequentially stacked on a substrate 10, and a photoresist 16 is applied thereon. In this case, the substrate 10 may be formed of a silicon (Si) substrate, a glass substrate, or a substrate having a silicon on insulator (SOI) structure. The cladding layer 12 is made of a silicon oxide film (SiO 2) or a polymer such as imide or acrylate. In addition, the core layer 14 may be formed of a material having a larger refractive index than the cladding layer 12 to trap light, such as silicon (Si), doped silicon oxide (SiO 2), silicon nitride (Si 3 N 4), and tantalum oxide. (Ta2O5), hafnium oxide film (HfO2), and the like. Or a polymer such as imide or acrylate.

As shown in FIG. 1B, a photoresist using a mask is performed to expose and develop the photoresist to form a photoresist pattern 16a defining a core region of the optical waveguide.

Thereafter, a dry etch process using the photoresist pattern 16a is performed to form the lower core pattern 14a shown in FIG. 1C. And the photoresist pattern is removed. It is most preferable to make the core pattern 14a of the optical waveguide circular, but since this is not feasible, it is currently implemented in a square shape having a vertical cross section.

However, in the optical waveguide manufacturing method according to the prior art, the etching profile of the target film and the photoresist is changed according to the core pattern density, so that the etching profile is greatly affected. For this reason, in the optical waveguide manufacturing process using the dry etching process, the lower the density of the photoresist pattern 16a, the smaller the etching selectivity with the core layer. As a result, shoulder erosion of the photoresist pattern 16a becomes severe as shown in FIG. 1C, so that the angle θ value of the side surface of the core pattern 14a of the optical waveguide becomes larger than 90 ° and its vertical cross section also has a trapezoidal shape. .

In order to realize the vertical profile of the optical waveguide side, it is necessary to increase the thickness of the photoresist pattern to minimize the erosion effect from the dry etching process. However, when the thickness of the photoresist is increased, the resolution decreases that much during the etching process. To this end, a manufacturing method in which a hard mask layer is added on top of a core layer without increasing a photoresist thickness has emerged.

2A to 2C are vertical cross-sectional views illustrating a process of manufacturing an optical waveguide using a hard mask according to the prior art. Referring to these drawings, an optical waveguide manufacturing method using a hard mask of the prior art is as follows. In this case, except for the hard mask, reference numerals are the same as in the prior art of FIGS. 1A to 1C.

As shown in FIG. 2A, the cladding layer 12, the core layer 14, and the hard mask layer 15 are sequentially stacked on the substrate 10, and a photoresist 16 is applied thereon. Here, a dielectric layer such as silicon oxide film (SiO 2) or silicon nitride film (Si 3 N 4) is used as the hard mask layer 15 material. The hard mask layer 15 preferably has a sufficient etching selectivity with the underlying core layer 14 material. For this purpose, the hard mask layer 15 may use a metal-based material such as chromium (Cr) or aluminum (Al).

Subsequently, as shown in FIG. 2B, a photoresist pattern (exposure and development) using an optical waveguide mask is performed to form a photoresist pattern 16a defining a core region of the optical waveguide, and then the lower hard mask layer is formed. Dry etching is performed to form the hard mask layer pattern 15a.

Then, a dry etching process using the photoresist pattern 16a and the hard mask layer pattern 15a is performed to form the core pattern 14a shown in FIG. 2C, and then the photoresist pattern is removed.

Therefore, in the related arts of FIGS. 2A to 2C, a hard mask layer is further used on the core layer to reduce the surface damage of the optical waveguide and the inclination of the etching profile due to photoresist erosion. However, the application of the hard mask layer can prevent the core layer of the optical waveguide from being damaged during the etching process.However, in the case where the pattern density is low, the shoulder erosion of the hard mask layer pattern also occurs, so that the vertical cross section of the core layer is trapezoidal. Will have For this reason, since the side angle angle (theta) value of a core layer became larger than 90 degrees, it was difficult to form the profile of a core pattern surface perpendicularly.

In addition, if the material of the hard mask layer does not use the same dielectric film as the cladding layer and uses a metal-based material in consideration of etching selectivity, a separate process that must be followed after the optical waveguide fabrication process must be removed. There was this.

An object of the present invention is to increase the pattern density by adding a dummy pattern around the core to solve the problems of the prior art as described above to increase the etch selectivity of the photoresist pattern and the core layer to be etched to increase the side profile of the core pattern. The present invention provides a method of manufacturing an optical waveguide using a dummy pattern that can be formed vertically.

Another object of the present invention is to add a dummy pattern around the core to increase the pattern density so that the side profile of the core pattern can be formed vertically, and the core layer of the optical waveguide is formed in a tapered shape to provide optical coupling at the time of coupling to the optical waveguide. The present invention provides a method of manufacturing an optical waveguide using a dummy pattern that can improve insertion efficiency.

In order to achieve the above object, the present invention provides a method of manufacturing an optical waveguide, the method comprising: laminating a cladding layer and a core layer on a substrate, and forming a core pattern defining an optical waveguide region by etching the core layer. Forming a dummy pattern separated at a predetermined interval around the core pattern, forming a protective film pattern masking the core pattern, and removing the protective film pattern after removing the dummy pattern.

In order to achieve the above object, the method of the present invention provides a method of manufacturing an optical waveguide, the method comprising: laminating a cladding layer and a core layer on a substrate, and etching the core layer to form a core pattern defining an optical waveguide region. At the same time, forming a dummy pattern separated by a predetermined interval around the core pattern, and forming a protective film pattern for masking the remaining core pattern while exposing the ends of the core pattern in a tapered form, and in the form of a dummy pattern and taper Removing the tip of the exposed core pattern.

Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings.

3A to 3F are vertical cross-sectional views illustrating a process of manufacturing an optical waveguide using a dummy pattern according to an embodiment of the present invention. Referring to these drawings, an optical waveguide manufacturing method according to an embodiment of the present invention is as follows.

As shown in FIG. 3A, the cladding layer 102 and the core layer 104 are sequentially stacked on the substrate 100 and a photoresist is applied thereon. At this time, the substrate 100 is made of a silicon (Si) substrate, a glass substrate or a substrate having an SOI structure. The cladding layer 102 is made of a silicon oxide film (SiO 2), an imide, a polymer such as acrylate, or the like. In addition, the core layer 104 is a material having a larger refractive index than the cladding layer 102 to trap light, such as silicon (Si), doped silicon oxide (SiO 2), silicon nitride (Si 3 N 4), and tantalum oxide film. (Ta2O5) or hafnium oxide film (HfO2) or the like. Or a polymer such as imide or acrylate. Since the substrate 100, the cladding layer 102, and the core layer 104 used in the present embodiment may be changed to various materials and addition of other materials by those skilled in the art, a detailed description thereof will be omitted.

Subsequently, the photoresist is exposed and developed by a photolithography process using a core and a dummy pattern mask of the optical waveguide to form photoresist patterns 106 and 108 defining the core region and dummy regions separated at regular intervals. . At this time, the dummy photoresist pattern 108 is added separately in the present invention to increase the peripheral density of the photoresist pattern 106 of the core region. For this purpose, not only the core region but also the dummy region should be considered together when designing and manufacturing the mask for the photoresist pattern. Moreover, the gap (W) between the core and the dummy is important when fabricating the photoresist pattern. If the gap (W) is too wide, the efficiency of increasing the pattern density decreases. If the gap (W) is too narrow, the alignment is performed in a subsequent process. Difficult to align Therefore, in consideration of the efficiency and alignment of the pattern density, it is preferable to set the spacing W between the core photoresist pattern 106 and the dummy photoresist pattern 108 to 0.2 µm to 2 µm.

As shown in FIG. 3B, a dry etching process using the cores and the dummy photoresist patterns 106 and 108 is performed to pattern the lower core layer to form the core pattern 104a of the optical waveguide and at the same time the core. Dummy patterns 104b separated by a predetermined interval are formed around the pattern 104a. In the etching process of the present invention, as the pattern density is further increased by the dummy photoresist pattern 108, the etch selectivity of the photoresist and the core layer, which is an object to be etched, is increased, so that the side profile is vertically etched.

When the core and dummy photoresist patterns 106 and 108 are removed, the core pattern 104a of the optical waveguide and the dummy pattern separated at regular intervals 110 are disposed on the cladding layer 102 as shown in FIG. 3C. Only 104b remains.

In the present invention, the dummy pattern 104b is useful for increasing the etch selectivity of the photoresist pattern and improving the etch profile, but if left intact, the aberne field is transmitted when the light is transmitted through the optical waveguide which is the core pattern 104a. It causes evanescent field and interference, causing serious light loss. Therefore, it is preferable to remove the dummy pattern 104b around the core of the optical waveguide by the following process.

As shown in FIG. 3D, a photoresist having a high flowability as a protective film 112 for removing the dummy pattern 104b from the entire surface of the resultant and protecting the core pattern 104a may be formed using the core pattern 104a and the dummy pattern ( 104b) is applied until fully gap-filled. In addition, an exposure process using the mask 114 covering the core pattern 104a of the optical waveguide and opening the remaining portion is performed to expose the remaining portions except for the core pattern 104a region. The development process is then continued to remove the remaining exposed portions leaving only the unexposed photoresist.

As a result, as shown in FIG. 3E, the inverse U-shaped protective film pattern 112a surrounding the upper and side surfaces of the core pattern 104a is completed, so that the core pattern 104a of the optical waveguide is protected by the protective film pattern 112a. At this time, in consideration of the etching selectivity according to the material of the dummy pattern 104b and the cladding layer 102, the protective film pattern 112a is separated from the dummy pattern 104b at regular intervals. That is, when the etching selectivity between the dummy pattern 104b and the cladding layer 102 is large, the exposure and development processes for the protective film pattern 112a are sufficiently enlarged, and as shown in FIG. The surface of the cladding layer 102 is exposed in the space 116 therebetween by separating them from each other at a predetermined interval 116 between the 112a.

Then, after removing the dummy pattern 104b by using a wet or dry etching process, the protective film pattern 112a made of photoresist is stripped. Accordingly, as shown in FIG. 3F, only the core pattern 104a of the optical waveguide in which the side surface is etched in the vertical profile remains on the cladding layer 102.

4A and 4B are vertical cross-sectional views illustrating a process of manufacturing an optical waveguide using a dummy pattern according to another exemplary embodiment of the present invention. In another embodiment of the present invention, when the etching selectivity of the dummy pattern and the cladding layer material is small in the manufacturing process of the above-described embodiment, the dummy pattern removing process is performed as follows.

First, as shown in FIG. 4A, a photoresist having high fluidity is applied as a protective film for selectively removing the dummy pattern 104b until the gap pattern is completely filled between the core pattern 104a and the dummy pattern 104b. In addition, the exposure and development processes are performed less than the above-described embodiment of FIG. 3 to form the passivation layer pattern 112b that surrounds the upper and side surfaces of the core pattern 104a and is also connected to the dummy pattern 104b. The protective film pattern 112b protects the core pattern 104a of the optical waveguide so that the surface of the cladding layer 102 is not exposed at all.

Therefore, in the manufacturing process according to another embodiment of the present invention, when the etching selectivity according to the material between the dummy pattern 104b and the cladding layer 102 is small, the cladding layer 102 is exposed by controlling the exposure and development processes of the photoresist. If not, a protective film pattern 112b for masking the upper surface of the core pattern 104a is formed.

Then, after removing the dummy pattern 104b by using a wet or dry etching process, the protective film pattern 112b made of photoresist is removed, thereby showing the core pattern 104a on the upper surface of the cladding layer 102 as shown in FIG. 4B. Only remain.

5A through 5G are vertical cross-sectional views illustrating a process of manufacturing an optical waveguide using a dummy pattern according to another exemplary embodiment of the present invention. Referring to these drawings, a method of manufacturing an optical waveguide according to still another embodiment of the present invention is as follows.

As shown in FIGS. 5A and 5B, the cladding layer 102 and the core layer 104 are sequentially stacked on the substrate 100, and the core pattern is used as an optical waveguide by etching the core layer by photo and dry etching processes. Dummy patterns 104b are formed around the core pattern 104a and at a predetermined interval.

As shown in FIG. 5C, in order to more effectively remove the dummy pattern 104b, a buffer film 116 having a different photochemical characteristic from a photoresist as a protective film is formed and a photoresist is applied as a protective film 118 thereon. . In this case, unlike the photoresist used as the passivation layer 118, the buffer layer 116 is not exposed to light and needs to sufficiently fill a narrow area such as a space between the core pattern 104a and the dummy pattern 104b. BARC (Bottom Anti-Reflection Coating) material is used. For example, Honeywell's DUO 248 and Brewer Science's DUV 30J or DUV 32 are used. Since the polymer-based BARC material is applied by spin coating, it has excellent gap fill capability.

Subsequently, as shown in FIG. 5D, an exposure and development process is performed to form a protective film pattern 120 that masks the core layer. In this case, since the buffer layer 116 under the protective layer pattern 120 is not exposed to light, the buffer layer 116 is not removed by the exposure and development processes and remains as it is.

As shown in FIG. 5E, the buffer layer 116 on the dummy pattern 104b is removed by a dry etching process to expose the surface of the dummy pattern 104b. In this case, since the buffer film 116 in the space between the core pattern 104a and the dummy pattern 104b of the optical waveguide is also partially etched, it is preferable to avoid over-etching.

Subsequently, as shown in FIGS. 5F and 5G, the exposed dummy pattern 104b is removed by a wet or dry etching process, and then the protective layer pattern 120 and the buffer layer 116 made of photoresist are removed. Accordingly, the core pattern 104a of the optical waveguide in which the side is etched in the vertical profile remains on the cladding layer 102.

Hereinafter, various embodiments of manufacturing one end portion of the core in the optical waveguide according to the present invention in the form of a taper (or a sharp tip) will be described.

6A to 6F illustrate a process of manufacturing a tapered optical waveguide when removing a dummy pattern according to an embodiment of the present invention. Referring to these drawings, the tapered optical waveguide manufacturing method according to an embodiment of the present invention is as follows. 6B and 6D illustrate vertical cross-sectional views of the substrate structure taken along the line AA ′ in the plan views of FIGS. 6A and 6C, respectively.

6A and 6B, the cladding layer 202 and the core layer are sequentially stacked on the substrate 200, and the core pattern 204a is used as an optical waveguide by etching the core layer by a photo process and a dry etching process. ) And the dummy pattern 204b separated by a predetermined interval around the core pattern 204a.

The highly flowable photoresist is applied until the gap fills completely between the core pattern 204a and the dummy pattern 204b. 6C and 6D, the top surface of the end portion of the core pattern 204a is exposed by cutting diagonally, and the remaining portion of the core pattern 204a is inversed to form a protective film pattern 206. Form by photo process. In the mask design and fabrication defining the protective film pattern 206, the position and shape of the protective film pattern are cut by tapering the ends of the core pattern. The protective film pattern 206 itself does not need to be sharp at all, and only needs to have the interface of the protective film pattern 206 obliquely cross the core pattern 204a at an oblique angle.

Using the protective film pattern 206 formed in the tapered shape as an etching mask, a dry etching process may be performed to etch the vertical cross section of the core pattern 204a into a tapered shape and simultaneously remove the dummy pattern 204b.

Then, when the protective film pattern 206 made of photoresist is removed, the end portion is etched into a tapered shape 204 'while having a side surface of the vertical profile on the cladding layer 202 as shown in FIGS. 6E and 6F. The core pattern 204a of the optical waveguide is formed.

7A to 7B are views illustrating a process of manufacturing a tapered optical waveguide when removing a dummy pattern according to another exemplary embodiment of the present invention. Referring to these drawings, the tapered optical waveguide manufacturing method according to another embodiment of the present invention sufficiently gaps between the core pattern 204a and the dummy pattern 204b under the protective film 212 in the manufacturing process of FIG. 6 described above. It is a manufacturing process which added the buffer film 210 to make.

The manufacturing method of the present embodiment in which the buffer film 210 is added is the same as the manufacturing process sequence of FIG. 5, except that the mask defining the protective film pattern 212 is manufactured differently so that the protective film pattern 212 ends the core pattern 204a. In order to make the diagonal cross the core pattern in the form of diagonal lines.

8A to 8D are vertical cross-sectional views illustrating a process of manufacturing a tapered optical waveguide when removing a dummy pattern according to another embodiment of the present invention. Referring to these drawings, a tapered optical waveguide manufacturing method according to another embodiment of the present invention is as follows. 8B to 8D show vertical cross-sectional views of the substrate structure taken along the line BB ′ in the plan view of FIG. 8A.

First, as shown in FIGS. 8A and 8B, the cladding layer 302 and the core layer are sequentially stacked on the substrate 300, and the core layer is etched by the photo process and the dry etching process to etch the core pattern 304a of the optical waveguide. And dummy patterns 304b formed at predetermined intervals around the core pattern 304a.

Then, a highly fluid photoresist is applied until the gap between the core pattern 304a and the dummy pattern 304b is completely gapfilled. Subsequently, an exposure and development process are performed to form an inverse 凹 type protective film pattern 306 surrounding the upper and side surfaces of the core pattern 304a.

In this embodiment, a gray scale or halftone mask is used to form a vertical taper at the core end of the optical waveguide when the photoresist, which is the protective film pattern 306, is formed. Proceed. Accordingly, a stepped shape in which the vertical thicknesses of the photoresist are sequentially formed, as shown by reference numerals 306a to 306c, is formed in the protective film pattern 306. Preferably, the thickness of the passivation layer pattern 306 gradually decreases from the center of the optical waveguide to the end portion of the core pattern 304a. In this case, when the gray scale interval of the mask is widened, the shape of the protective film pattern 306 forms stepped steps 306a, 306b, and 306c. However, when the gray scale interval is closely formed, a tapered structure that is vertically inclined may be formed.

Subsequently, as shown in FIG. 8C, the dummy pattern portion is removed using a dry etching process using the protective film pattern of the staircase structure. In this case, since the dummy pattern is etched, the passivation layer pattern on the upper portion of the core pattern 304a is also etched from a thin portion, so that the end portion of the core pattern 304a is also etched in a step shape 308 similar to the topography of the initial passivation pattern. do. Then, the remaining protective film pattern 306c is removed.

 Then, when a chemical mechanical polishing (CMP) process is performed, the stepped end of the core pattern 304a is polished into a smooth vertical taper 310 structure by a polishing pad as shown in FIG. 8D. Therefore, the core of the optical waveguide having a vertical tapered structure can be manufactured according to the embodiment of the present invention.

9A to 9C are vertical cross-sectional views illustrating a process of manufacturing a tapered optical waveguide when removing a dummy pattern according to another exemplary embodiment of the present invention. Referring to these drawings, the tapered optical waveguide manufacturing method according to another embodiment of the present invention is a gap between the core pattern (304a) and the dummy pattern (304b) under the protective film pattern 306 in the embodiment of FIG. The buffer film 312 which fully gap-fills was added.

As shown in FIG. 9A, a polymer-based BARC material is applied as the buffer layer 312 until a gap is completely filled between the core pattern 304a and the dummy pattern 304b. The photolithography process using a gray scale or halftone mask is performed to form a stepped step in which the thickness gradually becomes thinner from the center to the end portion as shown by reference numerals 306a to 306c on the portion of the protective film pattern 306.

As shown in FIG. 9B, the dummy pattern portion is removed using a dry etching process using the stepped protective layer pattern 306. At this time, since the passivation layer pattern on the upper portion of the core pattern 304a also has a stepped step, the end portion of the core pattern 304a is also etched in a step form 308 according to the thickness difference of the passivation layer pattern. At the same time, the portion 306c having the high thickness of the protective film pattern and the buffer film 312 under the protective film pattern 306c and the buffer film 312 'in the space between the dummy pattern and the core pattern 304a are formed by the etching process. Everything except) is removed.

Subsequently, when the remaining protective film pattern 306c and the buffer films 312 and 312 'are removed and the chemical mechanical polishing process is performed, the stepped ends of the core pattern 304a are smoothed by the polishing pad as shown in FIG. 9C. It is polished into a vertical taper 310 structure.

In addition, in various embodiments of the present invention, only a manufacturing process for patterning a core of an optical waveguide has been described. However, an additional process such as a cladding layer manufacturing process of covering the upper surface of the core layer on the core pattern is required. That is, the present invention is not limited to the above-described embodiments, but various modifications may be made by those skilled in the art within the spirit and scope of the present invention described in the following claims.

As described above, the present invention increases the pattern density around the core pattern by adding dummy patterns separated at a predetermined interval around the core pattern to increase the etching selectivity between the photoresist and the core layer to be etched. The side profile of the pattern can be formed vertically.

In addition, the present invention can reduce the insertion loss occurring when connecting the optical waveguide by forming a tapered or end-shaped stepped tapered portion of the end pattern of the core pattern when removing the dummy pattern around the core pattern of the optical waveguide. Can be.

1a to 1c are vertical cross-sectional views showing a process for manufacturing an optical waveguide according to the prior art,

2A to 2C are vertical cross-sectional views illustrating a process of manufacturing an optical waveguide using a hard mask according to the prior art;

3A to 3F are vertical cross-sectional views illustrating a process of manufacturing an optical waveguide using a dummy pattern according to an embodiment of the present invention;

4A and 4B are vertical cross-sectional views illustrating a process of manufacturing an optical waveguide using a dummy pattern according to another embodiment of the present invention;

5A to 5G are vertical cross-sectional views illustrating a process of manufacturing an optical waveguide using a dummy pattern according to another embodiment of the present invention;

6a to 6f are views illustrating a process of manufacturing a tapered optical waveguide when removing a dummy pattern according to an embodiment of the present invention;

7A to 7B are views illustrating a process of manufacturing a tapered optical waveguide when removing a dummy pattern according to another embodiment of the present invention;

8A to 8D are vertical cross-sectional views illustrating a process of manufacturing a tapered optical waveguide when removing a dummy pattern according to another embodiment of the present invention;

9A to 9C are vertical cross-sectional views illustrating a process of manufacturing a tapered optical waveguide when removing a dummy pattern according to another embodiment of the present invention.

<Brief description of the major symbols in the drawings>

100 substrate 102 cladding layer

104: core layer 104a: core pattern

104b: dummy pattern 106, 108: photoresist pattern

112: protective film 112a: protective film pattern

114 mask

Claims (11)

In the method for manufacturing the optical waveguide, Stacking the cladding layer and the core layer on the substrate; Etching the core layer to form a core pattern defining the optical waveguide region, and simultaneously forming a dummy pattern separated at predetermined intervals around the core pattern; Forming a protective film pattern for masking the core pattern; Removing the protective film pattern after removing the dummy pattern Method of manufacturing an optical waveguide using a dummy pattern comprising a. In the method for manufacturing the optical waveguide, Stacking the cladding layer and the core layer on the substrate; Etching the core layer to form a core pattern defining the optical waveguide region, and simultaneously forming a dummy pattern separated at predetermined intervals around the core pattern; Forming a protective film pattern for masking the remaining core pattern while exposing the end of the core pattern in a tapered shape; Removing an end of the core pattern exposed in the tapered form with the dummy pattern Method of manufacturing an optical waveguide using a dummy pattern comprising a. In the method for manufacturing the optical waveguide, Stacking the cladding layer and the core layer on the substrate; Etching the core layer to form a core pattern defining the optical waveguide region, and simultaneously forming a dummy pattern separated at predetermined intervals around the core pattern; Masking the core pattern, and forming a stepped passivation layer pattern having a predetermined step at an end of the core pattern; Performing a dry etching process using the stepped protective layer pattern as a mask to remove the dummy pattern and the stepped protective layer pattern while etching a vertical cross section of the core pattern into a tapered shape; Method of manufacturing an optical waveguide using a dummy pattern comprising a. The method according to any one of claims 1 to 3, The substrate is a method of manufacturing an optical waveguide using a dummy pattern, characterized in that consisting of a silicon substrate, a glass substrate or an SOI substrate. The method according to any one of claims 1 to 3, The protective film pattern is a method of manufacturing an optical waveguide using a dummy pattern, characterized in that the core layer and the photoresist having an etch selectivity. The method according to any one of claims 1 to 3, The protective film pattern is an inverse 凹 form surrounding the core pattern top and side, or the protective film pattern is a method of manufacturing an optical waveguide using a dummy pattern characterized in that the shape is connected to the side of the dummy pattern surrounding the core pattern top and side. . The method according to any one of claims 1 to 3, Before forming the protective film pattern, the method of manufacturing an optical waveguide using a dummy pattern further comprising the step of forming a buffer film gap gap between the core pattern and the dummy pattern. The method of claim 7, wherein The buffer layer pattern is a method of manufacturing an optical waveguide using a dummy pattern, characterized in that the protective layer pattern is made of a BARC material different from the photochemical properties. The method of claim 7, wherein The buffer layer pattern is a method of manufacturing an optical waveguide using a dummy pattern characterized in that the form surrounding the upper and side surfaces of the core pattern and connected to the dummy pattern side. The method of claim 3, wherein The stepped protective film pattern is a method of manufacturing an optical waveguide using a dummy pattern, characterized in that formed by an exposure process using a gray scale or halftone mask. The method of claim 3, wherein After removing the dummy pattern and the stepped protective layer pattern, a chemical mechanical polishing process may be performed to polish the tapered vertical cross section of the core pattern. Manufacturing method.