KR20050104830A - Chemical mechanical polishing pad conditioner - Google Patents

Abstract

The present invention discloses a chemical mechanical polishing pad conditioner for optimizing the polishing pad. The chemical mechanical polishing pad conditioner of the present invention is a chemical mechanical polishing pad conditioner for optimizing the polishing pad by selecting a conditioner according to a film to be polished in a CMP process, and includes a plurality of polishing pad conditioners having different roughnesses. The conditioner is selected according to the polishing target film. According to the present invention, by using a CMP device having a different roughness and having a conditioner having two or more faces separately, an appropriate polishing pad conditioner according to the film to be polished can be used, and the CMP process time can be shortened. .

Description

Chemical Mechanical Polishing Pad Conditioner {CHEMICAL MECHANICAL POLISHING PAD CONDITIONER}

TECHNICAL FIELD The present invention relates to a chemical mechanical polishing process, and more particularly, to a chemical mechanical polishing pad conditioner for optimizing a polishing pad by using a conditioner suitable for a kind of film to be polished in a chemical mechanical polishing process.

As the degree of integration of semiconductor integrated circuits increases and the multi-layer wiring process is put to practical use, the global planarization of the interlayer insulating film becomes more important, and among these, CMP has begun to attract attention as a new planarization technology.

The CMP process is an important technology used for planarization of semiconductor devices and separation of contacts and lines. The CMP process has a greater effect on consumables than other processes. Pad conditioners are one of them, which directly affects the polishing rate and flatness. In addition, the CMP process greatly affects the yield and reliability of semiconductor devices because the degree of scratches and metal contamination vary greatly according to manufacturing techniques. In particular, as the CMP process of the metal is included in the semiconductor device manufacturing process, the pad conditioner becomes more important in terms of defects and metal contamination.

Conventional pad conditioners use only one conditioner to control only the appropriate number of repetitions required in the process, which increases the time required for the process when the amount of conditioning increases, and the durability of the conditioner for long periods of time. There is a problem of worsening and increasing replacement cycles.

Accordingly, an object of the present invention is to provide a chemical mechanical polishing pad conditioner for optimizing the polishing pad by using a conditioner suitable for the type of polishing target film during the chemical mechanical polishing process. .

In order to achieve the above object, the present invention provides a chemical mechanical polishing pad conditioner for optimizing the polishing pad by selecting a conditioner according to the polishing target film during the CMP process, the plurality of polishing pad conditioners having different roughness, respectively The conditioner is selected according to the polishing target film.

Here, when the polishing pad conditioner is a bar-shaped CMP equipment, the part in contact with the pad has two or more surfaces.

The polishing pad conditioner has a triangular, square, pentagonal, hexagonal and octagonal shape having two or more portions in contact with the pad.

(Example)

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

First, looking at the technical principle of the present invention, the present invention has a different roughness, each having a conditioner having two or more faces separately, by using a CMP equipment equipped with the conditioner to grind the polishing process, Unlike the conventional process of performing the CMP process by adjusting only the number of repetitions of, the process time can be shortened, and the conditioner can be selected according to the film to be polished without disassembling the CMP equipment.

1 is a view showing a bar-type conditioner according to an embodiment of the present invention.

As shown in FIG. 1, the conditioner used in the CMP process may be divided into a single head and a separate head, and the polishing pad conditioner 10 according to the present invention is a bar type CMP device having a separate type. As used in the present invention, unlike a conventional conditioner, a portion in contact with the pad includes a polishing pad conditioner 10 having two or more surfaces.

Each polishing pad conditioner 10 has a different roughness, and as shown in FIG. Can be attached to the polishing process. In addition, the CMP process time can be reduced by selecting and individually using a polishing pad conditioner 10 suitable for the kind of the film to be polished during the CMP process.

FIG. 2 is a view showing a hexagonal polishing pad conditioner according to an embodiment of the present invention. When the polishing pad conditioner 10 having a predetermined roughness is selected according to the polishing target film before the CMP process is performed, the conditioner support unit 20 is selected. ) Is rotated to proceed the polishing process with the selected polishing pad conditioner 10, and the CMP equipment uses the selected polishing pad conditioner 10 to CMP the surface of the polishing target film.

As described above, the present invention can use a suitable polishing pad conditioner according to the polishing target film by using a CMP equipment having a different roughness, each having a conditioner having two or more sides, and the number of repetition of the polishing process Unlike the conventional process of adjusting the bay to proceed with the CMP process, the process time can be shortened.

In the above, the present invention has been described with reference to some examples, but the present invention is not limited thereto, and a person of ordinary skill in the art may make many modifications and variations without departing from the spirit of the present invention. I will understand.

As described above, the present invention can use a suitable polishing pad conditioner according to the polishing target film by using the CMP equipment having a different roughness, each having a conditioner having two or more sides, and shorten the CMP process time can do.

1 is a diagram showing a bar type conditioner according to an embodiment of the present invention.

Figure 2 shows a hexagonal polishing pad conditioner in accordance with an embodiment of the present invention.

3 shows the shape of a conditioner according to an embodiment of the invention.

Explanation of symbols on the main parts of the drawings

10: polishing pad conditioner 20: conditioner support

Claims (3)

In the chemical mechanical polishing pad conditioner to optimize the polishing pad by selecting the conditioner according to the film to be polished in the CMP process, A chemical mechanical polishing pad conditioner comprising a plurality of polishing pad conditioners each having a different roughness to select a conditioner according to the polishing target film. The method of claim 1, wherein the polishing pad conditioner, In the case of bar-type CMP equipment, the pads contacting the pads have two or more surfaces. The method of claim 2, wherein the polishing pad conditioner, A chemical mechanical polishing pad conditioner characterized by a triangular, square, pentagonal, hexagonal and octagonal shape having at least two contacting pads.