KR20050104065A - Flexible plane organic light emitting source - Google Patents

Abstract

The present invention relates to a backlight flat light source of a liquid crystal display device that can be bent,

In particular, using a very thin silicon wafer as a flexible substrate,

By using an organic light emitting device that is a self-luminous type and can be used as a surface light source, it is possible to combine two organic light emitting devices in which at least one red, green, blue, and white light emitting layer is stacked.

Or by stacking the red-green (RGB) tricolor emitting layer using a field sequential color method that emits red, green, and blue colors sequentially,

Or combining the double-sided organic light emitting device and the front organic light emitting device by using a field sequential color method of sequentially emitting red, green, and blue colors,

Or inorganic phosphors, organic dyes, organic pigments, nano metals, nano-composites, etc., which emit green, yellow, orange and red different white light components on the opposite side of the substrate of the organic light emitting device in which one or more blue light emitting layers are stacked. It relates to a structure and a manufacturing method of a backlight planar light source of a flexible liquid crystal display device characterized by applying a curing agent, a binder material and the like to an excitation layer.

In addition, the silicon wafer made of a single crystal used in the present invention has a low water vapor permeability (about <10 ^-7 g / m ² .day) compared to the substrate made of a polymer such as PET, PES, PC, which is a conventional flexible substrate In particular, there is no need to perform a process of stacking other protective films (SiO _x , SiN _x, etc.). In addition, since the substrate has no influence on an organic solvent such as acetone, it is easy to perform a pretreatment process such as cleaning. Furthermore, the high glass transition temperature and high thermal conductivity of the substrate facilitate the deposition of organic materials, the deposition of transparent electrodes and metal electrodes, and the damage of the organic light emitting materials due to the heat generated during driving, thereby improving the life of the device. It is possible to emit light with high luminance.

Description

Flexible plane organic light emitting source

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a backlight planar light source of a flexible liquid crystal display device, and more particularly, to an organic light emitting device having a planar light source and a self-luminous type using a thin Si wafer as a flexible substrate.

In general, the substrate of the organic light emitting device has been mainly used substrates such as glass that are transparent, low penetration of moisture and oxygen, and easy to clean without being sensitive to temperature changes. However, the glass substrate has a disadvantage of being fragile. In addition, the glass substrate has many limitations in manufacturing a wearable display, a rolling display, and the like, which will be used in the future. A substrate suitable for producing a display such as a display mounted on clothes, a scroll display, etc. without being broken as described above is a flexible substrate made of a polymer such as PET, PC, and PES.

While the substrates made of polymers such as PET, PC, and PES have the advantage of being able to bend, they have a high moisture vapor permeability (about 1 to 10 ² g / m ² .day), which greatly affects the lifetime of the device. Have. In order to prevent this, a process of stacking another protective film (SiO _x , SiN _x, etc.) on a substrate may be added.

In addition, it is difficult to clean the substrate made of a polymer such as PET, PC, PES. For example, using an organic solvent such as acetone to remove foreign matter such as dust on the substrate melts or breaks the substrate. For that reason, it is difficult to perform a pretreatment process such as cleaning in fabricating an organic light emitting device on a flexible substrate.

In addition, the glass transition temperature (PET: T _g = 130 ° C, PC: T _g = 150 ° C, PES: T _g = 220 ° C) of the substrate made of a polymer such as PET, PC, or PES is a glass substrate (T _g = 600 ° C.), it is difficult to deposit organic materials, transparent electrodes and metal electrodes.

In addition, the thermal conductivity of the substrate made of a polymer such as PET, PC, PES, etc. is very low compared to the glass substrate (about 8 times) and is very weak to heat generated when fabricating an organic light emitting device (especially when manufacturing a negative electrode). It is difficult to produce a light emitting device having high brightness and high stability, and also has a disadvantage in that the diffusion of heat generated from the device during driving is not easy, thereby damaging the organic light emitting material and causing a fatal effect on the life of the device.

The present invention has been made to solve the above problems, and relates to a backlight flat light source of a liquid crystal display device that can be bent, and in particular, using a thin Si wafer as a substrate that can be bent, a perfect moisture / It acts as an oxygen barrier (<10 ^-7 g / m ² .day), is easy to clean, has a high glass transition temperature, and uses high thermal conductivity.

Another object of the present invention is to use a planar white light source, a stacked organic light emitting device backlight light source for a field sequential color liquid crystal display, a field sequential color liquid crystal display and a backlight using the ultra-thin silicon wafer as a flexible substrate. It is an object of the present invention to provide a separate stacked organic light emitting device for a light source, a separated stacked organic light emitting device for a bidirectional backlight light source, and a manufacturing method thereof.

Hereinafter, exemplary embodiments of the organic light emitting diode according to the present invention will be described in detail with reference to the accompanying drawings.

Example 1 of the present invention shows a manufacturing method for making the silicon wafer substrate used in the organic light emitting device of the present invention very thin.

1A, 1B, and 1C are diagrams for describing Embodiment 1 of the present invention.

FIG. 1A illustrates an organic light emitting layer 120 stacked on the silicon wafer substrate 110 using a general silicon wafer substrate 110. After fixing the fabricated organic light emitting device 100 to a frame (zig) (130), a silicon wafer substrate is made very thin by using a grinder 140, as shown in Figure 1b. When the mechanical process is used as described above, the silicon wafer substrate can only be manufactured to a thickness of several tens of micrometers, and the silicon wafer substrate of several tens of micrometers is used as an opaque substrate that can be bent with little transmittance. The opaque silicon wafer substrate is used to fabricate a bendable front organic light emitting device.

1C uses a chemical process to etch a silicon wafer substrate. The chemical process can be used to fabricate transparent silicon wafer substrates because the thickness of the silicon wafer substrate can be processed to several tens of nanometers. After fabricating the organic light emitting device 100 by stacking the organic light emitting layer 120 on the silicon wafer substrate 110, and then etching using a grinder 140 or the like up to several tens of micrometers, as shown in FIG. After fixing to the mold 130 as shown in 1c, it is etched using potassium hydroxide (KOH) (150). Alternatively, the organic light emitting diode 100 is etched by the method of FIG. 1C without directly going through the process of FIG. 1B. When the chemical process is used, the silicon wafer substrate can be processed up to several tens of nanometers, and the tens of nanometer silicon wafer substrates have a transmittance of 90% or more, and are used as flexible substrates that can be bent. In addition, the transparent silicon wafer substrate also functions as a protective layer that prevents penetration of moisture, oxygen, or the like due to the structure of the single crystal. The transparent silicon wafer substrate is used to fabricate a backside organic light emitting device or a double-sided organic light emitting device that can be bent in combination with PET, PES, and PC.

2 shows an organic light emitting device manufactured by the above method. After fabricating the silicon wafer substrate transparently and thinly, the flexible silicon wafer substrate 210 and the substrate 220 made of a polymer such as PET, PES, and PC are bent to increase flexibility and process convenience of the substrate. . The organic light emitting device 200 is manufactured by stacking the organic light emitting layer 230 on the bonded substrate.

Embodiment 2 of the present invention relates to a planar white light emitting device using the flexible thin silicon wafer substrate which can be bent.

Representative examples of the blue organic light emitting device as the first layer constituting the white light emitting device are as follows.

As in the method of Example 1, the silicon wafer substrate 310 is fabricated to several tens of nanometers. The transparent silicon wafer substrate and PET, PES, PC 380 and the like are combined to form a transparent substrate that can be bent. The second layer 390, which is an excitation coating layer, is formed on the above-described transparent substrate.

A positive electrode is formed of tin indium oxide 320 on the bendable transparent silicon wafer substrate 310, and N, N'-diphenyl-N, N'-bis (1-naphthyl), which is a hole transporting material, is formed. )-(1,1'-biphenyl) -4,4'-diamine (NPB) 330 is vacuum deposited to a thickness of 50 nm at a rate of about 0.1 nm per second. (4,4'-bis (2,2-diphenyl-ethen-1-yl) diphenyl (DPVBi) 340 is deposited 40 nm at a rate of about 0.1 nm per second to serve as a light emitting layer on the hole transport layer. Subsequently, an electron transport material, Tris (8-quinolinato) aluminum (III) (Alq ₃ ) 350, is deposited at a rate of 30 nm at a rate of about 0.1 nm per second, and lithium flow as an electron injection layer on the electron transport layer. 1 nm is deposited at a rate of about 0.1 nm per second, and finally, after placing a mask for electrode formation, aluminum (370) is deposited at 120 nm at a rate of about 0.2 to 0.3 nm per second. In addition, SiO _x , SiN _x, or the like is inserted between the silicon wafer substrate and the positive electrode to insulate the substrate from the positive electrode to prevent leakage current. 3 is shown.

The manufacturing method of the 2nd layer which comprises the said white organic light emitting element is comprised as follows.

Transparent agent (1.00 g), curing agent (1.00 g), binder, para-xylene, yag (YAG; x%, x = 0, 1, 5 and 10) were added to the vial bottle and ultrasonic cleaner for about 30 minutes. Mixing forms a yellow suspension. The suspension formed is coated by the screen printing method and the excitation coating layer is transferred to an oven. The firing temperature is performed at 130 ° C. for 1 hour, and then the substrate temperature is cooled for about 20 minutes. The substrate cooled to room temperature is calcined again at 130 ° C. for about 3 hours. The final thickness after firing was in the range of several to several hundred micrometers.

4 is a light emission spectrum of the white light emitting device manufactured according to the second embodiment. The best white color was obtained when the composition ratio of YAG was 10% by weight. In addition, it can be seen that as the amount of YAG, the inorganic phosphor of the second layer, increases, the yellow component of the second layer increases rather than the blue component of the first layer in the emission spectrum.

Embodiment 3 of the present invention relates to a stacked organic light emitting device for a field sequential color liquid crystal display using the flexible ultra-thin transparent silicon wafer substrate.

5 illustrates the organic light emitting device, and a method of manufacturing the organic light emitting device is as follows.

A first electrode 510 made of an ITO thin film is formed on the silicon wafer substrate 500. The first electrode 510 is formed to have a predetermined thickness by a general sputtering method, and the formed film is formed in a predetermined pattern by etching or in a predetermined pattern by using a photoresist (PR). Thereafter, plasma is treated with oxygen, nitrogen, and argon ions for a predetermined time under atmospheric pressure or vacuum to form the work function adjustment film 520. In addition, SiO _x , SiN _x, or the like is inserted between the silicon wafer substrate and the first electrode to insulate the substrate, the first electrode, and the organic light emitting film, thereby preventing leakage current.

Subsequently, a first light emitting part 530 is formed on the substrate on which the first electrode 510 is formed.

The structure of the first light emitting unit 530 is as follows.

On the substrate on which the first electrode 510 is formed, as shown in FIG. 5A, a hole injection layer 531 of 100 μs made of an organic film such as CuPC and MTDATA, and a hole transport layer 532 of 500 μs made of an organic film such as NPB and TPD, and 300 3 of green light emitting layer 533 of Alq ₃ or Alq ₃ : C545T (0.5%), 300 전자 of electron transport layer 534 of Alq ₃ , and 5 전자 of electron injection layer of LiF, BCP: Cs 535 is continuously deposited by vacuum thermal evaporation to form a first light emitting layer 530.

Subsequently, in the step of forming the transparent electrode formed on the interface of the first light emitting layer 530, a semi-transmissive metal buffer layer 540 including Al 20 μs and Ag 100 μs is inserted in order to minimize damage to the organic thin film.

Subsequently, a grid film formed in a mesh shape capable of varying and applying a voltage of 0-100V and a sputter target of ITO are provided, and an oxygen ion implantation port is provided on the grid film, and an argon ion implantation port is provided below the grid film. The substrate on which the first light emitting layer 530 is formed is placed in a reaction chamber in which is formed to excite ions in the reaction chamber in a plasma state to form a transparent second electrode 550 of ITO 600 위에 on the metal buffer layer 540. In order to form the work function adjustment layer 520 on the second electrode 550, plasma is treated with oxygen, nitrogen, or argon ions for a predetermined time under atmospheric pressure and vacuum.

By providing a grid film in the reaction chamber, it is possible to minimize the influence on the light emitting layer by trapping a part of oxygen ions in the plasma state in the reaction chamber where the grid film moves toward the substrate or controlling the moving speed.

Subsequently, the second light emitting part 560 having a red light emitting layer of 300 占 된 of Alq ₃ : DCJTB (1%) in the same manner as when the first light emitting part is formed on the substrate on which the second electrode 550 is formed. ).

Subsequently, the metal buffer layer 540 is formed as described above, and the third electrode 570 and the work function adjustment layer 520 are formed.

Subsequently, a third light emitting part 580 having a blue light emitting layer of 300 Å made of SAlq or DPVBi or the like is formed in the same manner as when the first light emitting part is formed on the substrate on which the third electrode 570 is formed. .

The fourth electrode 590 has a thickness of about 1000 mW on the substrate on which the third light emitting part 580 is formed. The fourth electrode 590 is formed of a thin film by using any one or two or more alloys selected from Al, Ca, Mg, Li, Ag, and the like.

Subsequently, at least one protective film 591 is formed on the substrate on which the fourth electrode 590 is formed to protect the light emitting device and to serve as a moisture proof function. In the first embodiment, the protective film 591 was formed to have a thickness of 1000 kPa using an organic film made of NPB, Alq ₃ or the like or an inorganic film made of SiN, SiON or the like.

The organic light emitting device formed on the silicon wafer substrate 500 is manufactured in the range of several tens of nanometers by using a mechanical process and a chemical process as in the method of Example 1. The flexible silicon wafer substrate is combined with PET, PES, and PC 592 to form a substrate of the organic light emitting device.

In addition, in Example 3, a diffusion layer such as a transparent epoxy resin layer or a diffusion sheet having a large refractive index is formed along a surface opposite to a silicon wafer substrate on which organic light emitting devices are stacked instead of substrates such as PET, PES, and PC in order to have high brightness efficiency. 592) was applied to improve the linearity of light, thereby improving luminous efficiency. As the method for forming the epoxy resin layer, screen printing, spin coating, inkjet printing, doctor blade, mold method, etc. are used, and the thickness of the final coating layer after firing is in the range of 1 micrometer (um) -1 millimeter (mm). Formed to.

6 is a light emission spectrum of the red, green, and blue organic light emitting diodes manufactured in the same structure as the first light emitting unit of the third embodiment in order to explain the light emission spectrum according to the third embodiment.

If you describe the device structure in detail,

A positive electrode is formed of an ITO thin film on a transparent silicon wafer substrate, and plasma treatment is performed for a predetermined time with oxygen and nitrogen ions at atmospheric pressure to form a work function adjusting film 520.

Subsequently, a vacuum injection process was performed on the substrate on which the positive electrode was formed by vacuum thermal evaporation of a CuPC 100Å hole injection layer, an NPB 500Å hole transport layer, a 300Å light emitting layer, an Alq ₃ 300Å electron transport layer, a LiF 5Å electron injection layer, and an Al 1000Å negative electrode. To form an organic light emitting device.

The light emitting layer has a structure of Alq ₃ : DCJTB (1%) for the red light emitting layer, Alq ₃ for the green light emitting layer, and DPVBi for the blue light emitting layer.

Looking at the emission spectrum of Figure 6 it can be seen that the blue, green, red emission spectrum of 454 nm, 534 nm, 620 nm.

7 shows emission spectra of the first, second, and third light emitting units when the red organic light emitting device is manufactured in the same manner as the structure of the stacked organic light emitting device of Example 3; Referring to the emission spectrum of FIG. 7, the spectrum located in the first light emitting unit (1-layer) of the light emitting layer of the three-layer stacked structure shows an emission spectrum of 615 nm, the second light emitting unit (2-layer) is 620 nm, The 3-layer shows emission spectra of 630 nm and 740 nm. This is because the spectrum of each light emitting part is changed by the optical effect when the light emission spectrum generated inside the organic light emitting element passes through the light emitting element.

8 shows emission spectra of the first, second, and third light emitting units, respectively, when the green organic light emitting device is manufactured in the same way as the structure of the stacked organic light emitting device of Example 3. Referring to the emission spectrum of FIG. 8, the spectrum located in the first light emitting unit (1-layer) among the light emitting layers of the three-layer stacked structure shows an emission spectrum of 560 nm, and the second light emitting unit (2-layer) is 482 nm and 584. nm, the third light emitting layer (3-layer) shows an emission spectrum at 476 nm and 594 nm. It can be seen that the spectrum of the first light emitting part slightly shifts to a long wavelength, but the emission spectra of the second light emitting part and the third light emitting part vary greatly.

9 shows emission spectra of the first, second and third light emitting units, respectively, when the blue organic light emitting device is manufactured in the same manner as the structure of the stacked organic light emitting device according to the third embodiment. Referring to the emission spectrum of FIG. 9, the spectra located in the first light emitting unit (1-layer) of the light emitting layer of the three-layer stacked structure show emission spectra of 436 nm and 482 nm, and the second light emitting unit (2-layer) is 468. nm, the third light emitting layer (3-layer) shows an emission spectrum of 465 nm.

In the red and green organic light emitting diodes, the light emission luminance decreases as the light emitting layer rises to the upper layer, and in the case of the green organic light emitting diode, the emission spectrum is changed by the optical effect, whereas the blue organic light emitting diode is located in the first light emitting unit. By the optical effect, the emission spectrum is separated into 436 nm and 482 nm and the luminance is low, but when the upper layer is located, the line width of the emission spectrum is reduced, the color purity is improved, and the emission luminance is also increased.

Based on the above experimental results, in the structure of the three-layer stacked organic light emitting device of the present invention, a three-layer stacked organic light emitting device was manufactured, wherein the blue light emitting layer was positioned at the top layer.

FIG. 10 shows the spectrum of each light emitting part of an organic light emitting device in which a green light emitting layer is laminated on a first light emitting part, a red light emitting layer is laminated on a second light emitting part, and a blue light emitting layer is laminated on a third light emitting part. The spectrum located in the first light emitting part (1-layer) of the light emitting layer of the three-layer stacked structure shows an emission spectrum of 560 nm, the second light emitting part (2-layer) is 620 nm, and the third light emitting part (3-layer) Shows an emission spectrum of 465 nm.

The fourth embodiment relates to an electrode pattern formed on a silicon wafer substrate in the third embodiment.

The biggest drawback in increasing the size of the organic light emitting device is that it is difficult to emit uniform light due to dark spots and the like caused by impurity particles on the substrate. In order to solve this problem, in the present invention, an electrode pattern is formed on a silicon wafer substrate as shown in FIG. 11, and a transparent epoxy resin layer having a diffusion function to secure optical uniformity of light emitted on the opposite side of the silicon wafer substrate having an organic light emitting layer. Is applied, or a powder composed of SiO ₂ components is added to the coating layer, or a diffusion sheet or the like is applied.

11 is a schematic diagram illustrating an electrode pattern formed on the silicon wafer substrate.

Referring to the drawings, the pattern 1120 is formed using a photoresist (PR) or the like to have a predetermined pattern 1110 on the silicon wafer substrate 1100 on which the transparent or opaque electrode is formed.

Subsequently, a light emitting layer is formed as in Example 3 using the substrate on which the pattern is formed. When the substrate on which the pattern is formed is used, even though dark spots are generated by impurity particles on the substrate, only a portion where dark spots are generated due to the PR pattern has an advantage of lowering of the luminance.

Subsequently, a transparent epoxy resin layer having a diffusion function is coated on the surface opposite the substrate on which the organic light emitting layer is formed, or a powder composed of SiO ₂ components is added to the coating layer, or a diffusion sheet is applied. The diffusion layer plays a role of ensuring optical uniformity of the emitted light even if the light emission luminance of the portion where the dark spot is generated in the organic light emitting device is reduced.

Embodiment 5 of the present invention relates to a separate stacked organic light emitting device for a field sequential color type liquid crystal display device and a backlight light source, which will be described below. It is a method of manufacturing an organic light emitting element.

12 illustrates a liquid crystal display according to a fifth exemplary embodiment of the present invention and a backlight unit 1200 used therein.

Referring to the drawings, the liquid crystal display and the backlight unit 1200 used therein are combined with an organic light emitting device emitting full light as shown in FIG. 12A and an organic light emitting device emitting both sides as shown in FIG. 12B.

As shown in FIG. 12A, the organic light emitting diode having full top emission is composed of one light emitting layer 1211 and has a positive electrode 1261 formed on the substrate 1220, and organic material films 1201 to 1202 to 1204 to 1205 to 1206 to. 1251 and a transparent electrode 1263 which is a negative electrode and a positive electrode.

More detailed description is as follows.

As shown in FIG. 12A, the substrate 1220 of the organic light emitting diode that emits light is composed of a flexible ultra-thin opaque silicon wafer substrate fabricated as in the first embodiment.

On the upper surface of the substrate 1220, the positive electrode 1261, which is the first electrode 1261, is patterned with a black matrix PR. The first electrode 1261 is formed of a transparent conductive film such as indium tin oxide (ITO). However, since ITO is transparent, a reflective layer 1264 having a high reflectance, for example, a metal such as Cr, Al, Ag, Ni, or the like is inserted between the substrate 1220 and the first electrode 1261. The reflective layer 1264 generally forms a predetermined film thickness by vacuum thermal vapor deposition or sputtering. In addition, SiO _x , SiN _x, or the like is inserted between the silicon wafer substrate and the reflective layer to prevent insulation from the substrate, the first electrode, and the organic light emitting film. In addition, the first electrode 1261 is formed to a predetermined thickness by a general sputtering method, and after the formed film is formed in a predetermined pattern using a photoresist (PR), etc., a high work function is obtained. In order to plasma treatment for a predetermined time with oxygen and nitrogen ions at atmospheric pressure or vacuum.

Next, an organic material is formed on the substrate on which the first electrode 1261 is formed as follows.

On the substrate on which the first electrode 1261 is formed, a hole injection layer 1201 made of organic films such as CuPC and MTDATA, a hole transport layer 1202 made of organic films such as NPB and TPD, and Alq ₃ or Alq ₃ : C545T ( 0.5%), a green light emitting layer 1251, a hole limiting layer 1204 made of BCP or BAlq, an electron transport layer 1205 made of Alq ₃ , and an electron injection layer 1206 made of LiF, BCP: Cs, etc. Is deposited by vacuum thermal evaporation to form a first light emitting layer 1211.

Subsequently, in the step of forming the transparent electrode 1263, which is a negative electrode formed on the first light emitting layer 1211, in order to minimize the damage of the organic thin film already formed, LiF 10 Å / Al 20 Å / Ag 100 Å or Ca / An ultra thin metal buffer layer 1262 made of Ag is formed by a vacuum thermal vapor deposition method. On the ultra-thin metal buffer layer, a grid film formed in a mesh shape capable of varying and applying a voltage of 0-100 V and a sputter target of ITO is installed, and an oxygen ion implantation hole is provided on the grid film, and a lower portion of the grid film is provided. A second electrode 1263 made of transparent ITO on the ultra-thin metal buffer layer 1262 by placing a substrate on which the first light emitting layer 1211 is formed in a reaction chamber provided with an argon ion implantation hole and exciting the ions in the reaction chamber in a plasma state. To form. Thus, the front organic light emitting element is produced.

Subsequently, a double-sided organic light emitting diode is manufactured as in FIG. 12B. In the double-sided organic light emitting device, the light emitting layer is composed of two layers of the second light emitting part 1212 and the third light emitting part 1213. The double-sided organic light emitting diode includes a positive electrode 1265 formed on the flexible ultra-thin transparent silicon wafer substrate 1221 fabricated as in Example 1, and an organic material film 1201 to 1202 to 1204 to 1205 to 1206. 1252 to 1252 and a transparent electrode 1266 which is a negative electrode and a positive electrode. An organic material film 1201 to 1202 to 1204 to 1205 to 1206 to 1253, which are third light emitting units 1213, are formed on the transparent electrode, and a negative electrode and a transparent electrode 1267 are formed on the organic material film.

More detailed description is as follows.

As shown in FIG. 12B, the substrate 1221 of the organic light emitting diode that emits light on both sides of the organic light emitting device is made of a flexible thin silicon wafer substrate that can be bent as in the first embodiment.

The upper surface of the substrate 1221 is formed of ITO, which is a transparent electrode, as the positive electrode 1265, which is a third electrode. The ITO is formed to a predetermined film thickness by a general sputtering method. SiO _x or SiN _x is inserted between the substrate and the third electrode as an insulator layer to insulate the substrate, the third electrode, and the organic light emitting film, thereby preventing leakage current. The formed third electrode 1265 is formed in a predetermined pattern by using a photoresist (PR) or the like in the same manner as in the front organic light emitting device, and then, at atmospheric pressure or in vacuum to obtain a high work function. Plasma treatment with oxygen and nitrogen ions for a period of time.

Subsequently, the second light emitting part 1212 is formed on the substrate on which the third electrode 1265 is formed in the same manner as described above, that is, to form the first light emitting part 1211. As the light emitting layer 1252 of the second light emitting unit 1212, two organic light emitting materials such as Alq 3: DCJTB (1%) are used to emit red light.

In addition, after forming the second light emitting unit 1212 in the same manner as described above, the fourth electrode 1266 is formed. The fourth electrode 1266 is also formed in the same manner as in the method in which the second electrode 1263 formed in the front organic light emitting device of FIG. 12A is formed. The metal buffer layer 1262 is formed between the fourth electrode 1266 and the second light emitting part 1212 in the same manner as described above.

In order to obtain a high work function on the fourth electrode 1266, plasma treatment is performed for a predetermined time.

As described above, the third emission layer 1213 is formed on the top surface of the fourth electrode 1266 by the same method as the first emission layer 1211 and the second emission layer 1212. The light emitting layer 1253 of the third light emitting layer 1213 emits blue light using the organic light emitting material DPVBi.

The fifth electrode 1267 is formed on the upper surface of the third light emitting layer 1213 in the same manner as described above. The metal buffer layer 1262 is formed between the fifth electrode 1267 and the third light emitting part 1213 in the same manner as described above.

When the process is performed in the same manner as described above, a double-sided organic light emitting device in which light is simultaneously emitted to the front and rear surfaces of the substrate may be manufactured.

13 and 14 show emission spectra of organic light emitting diodes manufactured and measured in the same manner as in Example 5. FIG.

More detailed description is as follows.

FIG. 13 is a light emission spectrum measured by fabricating red, green, and blue devices each having a single light emitting part with respect to the front organic light emitting device. Referring to the device structure, 120 nm thick ITO is formed on the silicon wafer substrate as the first electrode, SiO ₂ is formed 100 nm thick as the insulating layer between the silicon wafer substrate and the first electrode, and holes are formed on the first electrode. NPB 60 nm for transport layer, Alq3: DCJTB (1%) for red emission, Alq3 for green emission, DPVBi for 30 nm, and Alq ₃ 30 nm for electron transport layer ITO 60 nm was formed thereon as a negative electrode, and a semi-transmissive metal was formed by stacking LiF 1 nm, Al 2 nm, and Ag 10 nm as ultra-thin metals between the organic light emitting layer and the transparent electrode as the negative electrode.

FIG. 14 is a double-sided organic light emitting device having two light emitting parts, Alq3: DCJTB (1%, 30 nm) red as the light emitting layer 1252 of the second light emitting part 1212, and a third light emitting part 1213. As the light emitting layer 1253, it is a light emission spectrum produced and measured using DPVBi (30 nm). The hole transport layer, the electron injection layer, the ultra thin metal, and the transparent electrode were made of the same material and thickness as described above. In addition, ITO 666, which is a transparent electrode between the light emitting layers, has a high work function by plasma treatment with oxygen and nitrogen ions in a vacuum for a predetermined time.

Embodiment 6 of the present invention will be described a method of combining the double-sided organic light emitting device and the front organic light emitting device produced in Example 5. In Example 5, a front organic light emitting device having one light emitting layer and a double layer organic light emitting device having two light emitting layers laminated using a transparent electrode are manufactured.

In FIG. 12, a transparent epoxy or sealant 1240 is applied to an edge between silicon wafer substrates of the two front and double-sided organic light emitting devices for the purpose of preventing moisture and oxygen infiltration in the device, and is removed to remove remaining moisture and oxygen. A moisture absorbent or a getter 1250 is inserted between the epoxy or sealant 1240 and the organic light emitting film to combine the two organic light emitting devices. When the moisture absorbent is inserted, a groove enough to contain the moisture absorbent is formed in the substrate so that the moisture absorbent does not come out on the substrate. In addition, when combining the two sides and the front organic light emitting device, a spacer having a predetermined shape such as spherical and square pillars is put in a transparent epoxy and sealant to maintain a distance of 1 μm.

Alternatively, the transparent epoxy or sealant 1240 may be applied to the organic light emitting layer as well as the edges of the substrates 1220 to 1221 to remove moisture and oxygen from the beginning. In the above method, when firing for a long time at a low temperature when firing, it is possible to prevent damage to the organic light emitting film.

15A and 15B are cross-sectional views that simplify the process of joining and cutting the front and double sided organic light emitting devices. 15A illustrates a top organic light emitting device 1501 as a top plate and a double side organic light emitting device 1502 as a bottom plate, and are placed in a predetermined frame 1153. Subsequently, the upper plate 1501 and the lower plate 1502 are precisely aligned, and a hygroscopic agent and sealant are inserted as shown in FIG. 12, and then coupled as shown in FIG. 15B. After combining as described above, the upper and lower plates are scribed along the cutting line as shown in FIG. 15B.

When combining a double-sided organic light emitting element and a front organic light emitting element as mentioned above, it is preferable to carry out in high purity nitrogen atmosphere or vacuum.

FIG. 16 shows emission spectra of organic light emitting diodes manufactured and measured by the same method as Example 5 and Example 6. FIG. It can be seen that the spectrum of the device combining the stacked organic light emitting device of FIG. 16 and the spectrum of the device combining the stacked organic light emitting device of FIG. 13 are excellent in color purity. . In addition, more light is emitted than a single layer, and light is emitted at the same high luminance as all of red, green, and blue.

17 and 18 are light emission spectra according to a gap between two sides and a front organic light emitting device in combining two sides and a front organic light emitting device. If the interval is 0.5 ㎛, 2.5 ㎛ the shape of the spectrum does not change significantly. However, it can be seen that the green light decreases when the interval is 10 μm. Therefore, it is appropriate that the interval is in the range of 0.5 µm to 20 µm.

Embodiment 7 relates to the formation of a field sequential color type liquid crystal display device and a backlight light source used therein, with the elements formed in Embodiments 5 and 6 of the present invention.

As shown in FIG. 12, when the liquid crystal panel 1230 is attached to the light emitting portion by combining the double-sided organic light emitting device and the front organic light emitting device, it may be used in a liquid crystal display using a field sequential color method.

In more detail, the first, second, and second light emitting layers 1211, 1212, 1213, and 1213 may emit green, red, and blue light in the double-sided organic light emitting diode and the front organic light emitting diode.

When the red, green, and blue light emission are sequentially driven for a short time, the light of red, green, and blue comes out, respectively. In addition, when driven simultaneously, white light comes out. By using the liquid crystal panel 1230 to adjust the gray scale of the light emitted from the above to configure a display such as a field sequential color type liquid crystal display device.

It is a method of forming a backlight light source used for the liquid crystal display device which is another objective of this invention.

As shown in FIG. 12, when the double-sided organic light emitting device and the front organic light emitting device are combined, a transparent and high refractive index epoxy resin is applied to the light emitting portion or a diffusion sheet 1230 is inserted to improve light uniformity and high brightness. It is possible to form a backlight that emits light.

Embodiment 8 of the present invention relates to a separate stacked organic light emitting device for a bidirectional backlight light source, the following is a method of manufacturing a back-emitting organic light emitting device having a structure having a light emitting layer of two layers.

In Example 8 of the present invention, in order to fabricate a white organic light emitting device emitting three primary colors of red, green, and blue, a white organic light emitting layer is formed by stacking a white light emitting layer using a mixture of blue and red and a green light emitting layer to compensate for insufficient green light emission. A light emitting element was constructed.

19 illustrates a separated stacked organic light emitting device 1900 for a bidirectional backlight light source according to Embodiment 8 of the present invention.

Referring to the drawings, the separated stacked organic light emitting diodes 1900 for the bidirectional backlight light source are combined with two organic light emitting diodes 2000 emitting backside as shown in FIG. 20.

As illustrated in FIG. 20, the organic light emitting diode 2000 that emits back light includes a first light emitting unit 1911 and a second light emitting unit 1912. As shown in FIG. 20, the organic light emitting device that emits back light includes a positive electrode 1961, an organic material layer 1901 to 1902 to 1904 to 1905 to 1951, and an ultra thin metal buffer layer 1906 formed on the silicon wafer substrate 1920. And a transparent electrode 1962 that is a negative electrode and a positive electrode. The organic material layer 1901 to 1902 to 1904 to 1905 to 1952 and the negative electrode 1964 are further included on the transparent electrode.

More detailed description is as follows.

As illustrated in FIG. 20, the substrate 1920 is provided with an organic light emitting device that emits back light. The substrate 1920 is made of a transparent silicon wafer substrate fabricated as in the first embodiment.

On the upper surface of the substrate 1920, the positive electrode 1961, which is the first electrode, is patterned with a black matrix PR. The first electrode 1961 is formed of a transparent conductive film such as indium tin oxide (ITO) having a high work function. The ITO film, which is the transparent electrode, is formed to a predetermined film thickness by a general sputtering method. In addition, SiO _x or SiN _x is interposed between the substrate and the first electrode as an insulator layer to insulate the substrate, the first electrode, and the organic light emitting film, thereby preventing leakage current. The formed first electrode 1961 is formed in a predetermined pattern using a photoresist (PR), a transparent insulator such as SiO _X , SiN _X, or the like, and then formed at atmospheric pressure or in vacuum to obtain a high work function. Plasma treatment with oxygen and nitrogen ions for a period of time.

Subsequently, an organic material is formed on the substrate on which the first electrode 1961 is formed as follows.

On the substrate on which the first electrode 1961 is formed, a hole injection layer 1901 made of organic films such as CuPC and MTDATA, a hole transport layer 1902 made of organic films such as NPB and TPD, and a blue light emitting layer DPVBi and a red light emitting layer A white light emitting layer (1951) composed of Alq ₃ : DCJTB (1%), an electron transporting layer (1904) made of Alq ₃ , and an electron injection layer (1905) made of LiF, BCP: Cs were continuously deposited by vacuum thermal evaporation. The first light emitting unit 1911 is configured.

Subsequently, in the step of forming a transparent electrode 1962, which is a negative electrode and a positive electrode, formed on the interface of the first light emitting unit 1911, in order to minimize damage to the organic thin film formed, LiF 10 Å / Al 20 Å / Ag 100 Å Alternatively, an ultra-thin metal buffer layer 1906 composed of Ca 100 Pa / Ag 100 Pa is formed by a vacuum thermal vapor deposition method. On the ultra-thin metal buffer layer, a grid film formed in a mesh shape capable of varying and applying a voltage of 0-100 V and a sputter target of ITO is installed, and an oxygen ion implantation hole is provided on the grid film, and a lower portion of the grid film is provided. A second electrode 1962 made of transparent ITO on the metal buffer layer 1906 by inserting a substrate having the first light emitting portion 1911 in a reaction chamber having an argon ion implantation hole therein to excite ions in the reaction chamber in a plasma state. ).

Subsequently, the second light emitting unit 1912 is configured in the same manner as described above, that is, to form the first light emitting unit 1911. The light emitting layer 1952 of the second light emitting unit 1912 emits green light using an organic light emitting material such as Alq ₃ or Alq ₃ : C545T.

The third electrode 1963 Al is formed on the substrate on which the second light emitting unit 1912 is formed to have a thickness of about 1000 mW.

Subsequently, one or more protective films 1964 are provided on the substrate on which the third electrode 1963 is formed to protect the light emitting device and to serve as a moisture proof function. In the first embodiment, the protective film 1964 was formed to have a thickness of 1000 mW using an organic film made of NPB, Alq ₃ or the like or an inorganic film made of SiN _X , SiO _X , or the like.

Subsequently, a diffusion layer 1930, such as a transparent epoxy resin layer or a diffusion sheet having a high refractive index, is applied to improve light linearity along the surface opposite to the substrate on which the light emitting layer is formed to improve light emission efficiency.

21 and 22 illustrate spectrums of a white organic light emitting device and a green organic light emitting device manufactured with a structure of a general organic light emitting device.

More detailed description is as follows.

Referring to the device structure of FIG. 21, ITO is formed to have a thickness of 120 nm on the transparent silicon wafer substrate with a positive electrode, SiO ₂ is formed to have a thickness of 100 nm between the silicon wafer substrate and the positive electrode with an insulating layer, and a hole transport layer is formed on the positive electrode. NPB 60 nm, blue light emitting layer DPVBi 15 nm, red light emitting layer Alq ₃ : DCJTB (1%) 10 nm white light emitting layer and electron transport layer Alq ₃ 35 nm, electron injection layer LiF 1 nm, negative electrode Al 100 nm was formed.

Referring to FIG. 21, it can be seen that blue light emission occurs at 450 nm and red light emission occurs at 610 nm. Although the spectrum of FIG. 21 shows white light emission, it can be seen that green light emission is insufficient for using a backlight light source with the device structure of FIG. 21.

FIG. 22 is a general green organic light emitting diode and has the same structure as that of FIG. 21. The light emitting layer is made of Alq ₃ 30 nm, which is a green light emitting material. Referring to FIG. 22, it can be seen that green light emission occurs at 534 nm.

FIG. 23 illustrates the blue and red light emitting layers in the first light emitting unit 1911 and the green light emitting layer in the same manner as the device structure of FIG. 20 in order to compensate for the green light emission that is insufficient in the white light emitting organic light emitting device in which blue and red light emission are mixed. The spectrum of the organic light emitting element configured in the second light emitting unit 1912 is shown.

FIG. 24 illustrates a spectrum of an organic light emitting diode including a green light emitting layer in the first light emitting unit 1911 and a blue and red light emitting layer in the second light emitting unit 1912 as described above.

Referring to FIG. 23, the green light emission of the second light emitting part is combined with the white light emission of the first light emitting part, but the light emission luminance is deteriorated by the optical effect. The white light emission spectrum of the first light emitting part can also be seen that the blue light emission is lower than the red light emission luminance due to the optical effect.

On the other hand, referring to FIG. 24, although the white light emission of the second light emitting part is lower in luminance than the blue light emission due to the optical effect, the red, green, and blue light emission are properly mixed due to the green light emission of the first light emitting part. White light emission can be seen.

The organic light emitting device structure of the present invention has an advantage that the light emitting luminance of red, green, or blue light emitted when a light emitting layer is formed of a single layer as a general organic light emitting device structure can be solved by stacking two or more light emitting layers.

Example 9 of the present invention will be described a method of combining the light emitting device to fabricate the rear organic light emitting device manufactured in Example 8 as a bidirectional backlight light source.

In Example 8, two backside organic light emitting diodes were manufactured.

In FIG. 19, a transparent epoxy or sealant 1940 is applied to an edge between silicon wafer substrates of the two rear organic light emitting devices to prevent moisture and oxygen infiltration into the device and to remove remaining moisture and oxygen. A moisture absorbent or a getter 1950 is inserted between the sealant 1940 and the organic light emitting layer to combine the two organic light emitting devices. When the moisture absorbent is inserted, a groove enough to contain the moisture absorbent is formed in the substrate so that the moisture absorbent does not come out on the substrate. In addition, when the two rear organic light emitting diodes are combined, a spacer having a predetermined shape such as a sphere or a square pillar is inserted between the rear organic light emitting diodes to maintain a constant interval.

Alternatively, the transparent epoxy or sealant 1940 may be applied to the organic light emitting layer as well as the edge of the silicon wafer substrate 1920 to remove moisture and oxygen from the beginning. In the case of the above method, when firing for a long time at a low temperature when firing it can prevent damage to the organic light emitting layer.

When the two rear organic light emitting devices are combined as described above, it is preferable to use a high purity nitrogen atmosphere or a vacuum.

Although the present invention has been described with reference to the embodiments shown in the drawings, this is merely exemplary, and the true technical protection scope of the present invention should be defined by the technical spirit of the appended claims.

As described above, the following effects may be obtained with respect to the backlight planar light source of the bent liquid crystal display device, the bendable organic light emitting device, and a method of manufacturing the same.

First, as a display that can be bent, by using an organic light emitting device, high viewing angle, fast response speed, and low power driving are possible, and also thinness and weight can be applied to various fields.

Second, the process of inserting a protective film (SiO _x , SiN _x, etc.) is lower than the conventional substrates made of polymers such as PET, PC, PES, such as bendable lower than the moisture permeability (about <10 ^-7 g / m ² .day) Not only does it need to be done, but the life of the organic light emitting device is improved.

Third, the pretreatment process is easy because there is no effect on organic solvents such as acetone compared to the conventional bendable substrate.

Fourth, since the glass transition temperature and the thermal conductivity are higher than those of the conventional bendable substrate, not only organic material deposition, transparent electrode and metal electrode deposition are easy, but also the heat generated when driving the organic light emitting device Less damage can improve the life of the device and high luminance light emission.

Fifth, the planar white light source, the stacked organic light emitting device backlight light source for the field sequential color liquid crystal display, the field sequential color liquid crystal display and the backlight light source using the flexible liquid crystal display and the backlight light source of the present invention. Separated stacked organic light emitting device for, and separated stacked organic light emitting device for a bidirectional backlight light source and the like can be manufactured.

1A, 1B, and 1C are diagrams for describing Embodiment 1 of the present invention.

FIG. 2 is a schematic view of a backside organic light emitting device fabricated from a flexible silicon wafer substrate that can be bent;

3 is a schematic cross-sectional view showing the structure of a general blue organic light emitting diode

4 is a light emission spectrum of a white light emitting device manufactured according to Example 2

5 is a view for explaining an organic light emitting device manufactured according to the third embodiment.

5A is a view for explaining a first light emitting part of the organic light emitting device manufactured according to the third embodiment;

6 is a light emission spectrum of red, green, and blue organic light emitting diodes of an existing organic light emitting diode structure;

7 is a light emission spectrum of the first, second, and third light emitting units when a red organic light emitting diode is manufactured in the same manner as the structure of the stacked organic light emitting diode of Example 3;

8 is a light emission spectrum of the first, second, and third light emitting units when a green organic light emitting diode is manufactured in the same manner as the structure of the stacked organic light emitting diode of Example 3;

9 is a light emission spectrum of the first, second, and third light emitting units when a blue organic light emitting device is manufactured in the same manner as the structure of the stacked organic light emitting device of Example 3;

10 is a spectrum of each light emitting part of an organic light emitting device in which a green light emitting layer is laminated on a first light emitting part, a red light emitting layer is laminated on a second light emitting part, and a blue light emitting layer is laminated on a third light emitting part.

11 is a schematic view for explaining an electrode pattern formed on a substrate

12 is a schematic diagram illustrating a liquid crystal display device having a field sequential color method and a backlight unit used according to Embodiment 5 of the present invention;

FIG. 12A is a cross-sectional view illustrating an organic light emitting diode that emits light over an entire surface of FIG.

12B is a cross-sectional view of an organic light emitting diode that emits both surfaces of FIG. 12.

13 is a red, green, blue emission spectrum of the conventional organic light emitting device structure

FIG. 14 is a spectrum obtained by applying a red light emitting layer to a second light emitting part and a blue light emitting layer to a third light emitting part of FIG. 12B.

15A is a cross-sectional view of the upper and lower plates before combining the both side and front organic light emitting elements in the present invention

FIG. 15B is a cross-sectional view of simultaneously cutting both sides and the front organic light emitting diodes after combining the both sides and the front organic light emitting diodes in FIG. 15A.

FIG. 16 is a spectrum obtained by applying a green light emitting layer to a first light emitting part of FIG. 12, a red light emitting layer to a second light emitting part, and blue to a third light emitting part;

FIG. 17 is a light emission spectrum when the distance is 0.5 μm and 2.5 μm in coupling the double-sided organic light emitting device and the front organic light emitting device in FIG. 12.

FIG. 18 is a light emission spectrum when the distance between the double-sided organic light emitting device and the front organic light emitting device is 10 μm in FIG. 16.

19 is a cross-sectional view illustrating a separated stacked organic light emitting device 1900 for a bidirectional backlight light source according to Embodiment 8 of the present invention.

20 is a view for explaining an organic light emitting diode that emits back light according to Embodiment 8 of the present invention.

21 is a spectrum of a white organic light emitting device manufactured by a structure of a general organic light emitting device.

22 is a spectrum of a green organic light emitting diode manufactured with a structure of a general organic light emitting diode.

23 is a light emission spectrum of a device in which a white light emitting layer is laminated on a first light emitting part and a green light emitting layer is laminated on a second light emitting part with a structure of a separate stacked organic light emitting device for a bidirectional backlight light source of the present invention;

24 is a light emission spectrum of a device in which a green light emitting layer is laminated on a first light emitting part and a white light emitting layer is laminated on a second light emitting part with a structure of a separate stacked organic light emitting device for a bidirectional backlight light source of the present invention;

25 is a view for explaining the following claim 45

26 is a view for explaining the following claim 49

27 is a view for explaining the following claim 50

<Explanation of symbols for main parts of the drawings>

200-organic light emitting device

210-Bendable Transparent Silicon Wafer Substrate

220-substrates such as PET, PES, PC

230-organic light emitting layer

Claims (51)

A backlight flat light source of a liquid crystal display device by a flexible polymer or a low molecular organic light emitting device, In particular, as a substrate of the organic light emitting device, a thin thickness, high transmittance ultra-thin silicon wafer (thin Si wafer) is used as a substrate, and the substrate serves as a protective film or an oxygen and moisture barrier layer, Backlight planar light source and flexible organic light emitting diode of the flexible liquid crystal display device, characterized by adding a light diffusing function for high uniformity, high brightness, and long life of the light emitting surface of the organic light emitting device. device. The method of claim 1, In using a silicon wafer as a substrate in the organic light emitting device, Or manufacturing the organic light emitting element on the silicon wafer substrate in advance, and then thinning the substrate. After fabricating the silicon wafer substrate thin, the organic light emitting device of the backlight planar light source and the flexible organic light emitting device of claim 1, characterized in that to produce an organic light emitting device. The method of claim 1, In the method of manufacturing the silicon wafer substrate thin, The backlight flat light source and the flexible organic light emitting device of the flexible liquid crystal display device, characterized in that the thickness of the silicon wafer substrate to several tens of micrometers by using a mechanical process such as grinder, sand blast, etc. How to make. The method of claim 1, In the method of manufacturing the silicon wafer substrate thin, Backlight planar light sources and flexible organic light emitting diodes of a flexible liquid crystal display device, characterized in that the thickness of the silicon wafer substrate is several tens of nm using a chemical process using a potassium hydroxide (KOH) solution or the like. Method of fabrication of the device. The method of claim 1, The use of the flexible transparent or opaque silicon wafer substrate as the upper encapsulation film or film serving as an oxygen and moisture barrier layer formed on the organic light emitting layer of the light emitting device, the flexible liquid crystal display Backlit planar light sources of the device and flexible organic light emitting elements. The method of claim 1, In order to increase the flexibility of the substrate and the convenience of the process, a plastic substrate made of a polymer such as PET, PC, PES, etc. is attached to the thin silicon wafer substrate, By attaching a diffusion layer such as an epoxy resin or a diffusion sheet to the substrate to the substrate, high flatness and high brightness of the light may be obtained, and at the same time, the flexibility of the substrate may be improved. Organic light emitting device. The method of claim 6, After fabricating the silicon wafer thinly, in order to increase the flexibility of the substrate and the convenience of the process, a substrate made of a polymer such as PET, PC, PES, etc. and a diffusion layer may be combined with the thinned silicon wafer substrate, Alternatively, in order to increase the flexibility of the substrate and the convenience of the process, the substrate and the diffusion layer made of a polymer such as PET, PC, PES, etc. are combined with the silicon wafer substrate, and then the silicon wafer substrate is made thin. Backlit planar light sources of the device and flexible organic light emitting elements. The method of claim 1, In manufacturing a flat white light source using the flexible liquid crystal display and a backlight light source, The planar white light source is an organic light emitting device that emits blue light and is provided as a first layer made of a transparent and flexible thin Si wafer substrate having a thickness of several tens of nanometers (nanometers). A white light-emitting device comprising an excitation coating layer which absorbs some blue light energy passing through the substrate and is provided with a second layer which generates one, two or more other constituent colors of the white light source, green, yellow, orange and red. Or One or more of the white light source by absorbing some blue light energy passing through the organic light emitting element, which is a first layer made by an opaque substrate comprising an opaque substrate on a transparent substrate emitting blue and the transparent electrode opposite to the substrate. A white light emitting device comprising an excitation coating layer which is a second layer that generates constituent colors of rust, yellow, orange, and red. The method of claim 8, The organic light emitting element as the first layer comprises a single layer or two or more layers of blue excitation circle light emitting layers separated by a pair or two or more transparent electrodes. The method of claim 8, The organic light emitting device, which is the first layer, includes a blue excitation circular emission layer separated by a pair or two or more transparent electrodes, and includes one or two or more layers of white light constituent colors such as green, yellow, orange, and red light emitting layers. Light emitting element. The method of claim 8, The excitation coating layer, which is the second layer, comprises one or two or more layers of organic / inorganic phosphors, organic pigments, organic fuels, nano metals, and quantum dots of a composite material. The method of claim 8, Organic / inorganic phosphors, organic pigments, organic fuels, quantum dots of nanometals and nanocomposites constituting the excitation coating layer, which is the second layer, are mixed and baked by a transparent agent, a curing agent, a binder, and the like, and are based on the total mass of the entire coating layer. The pigment mixing ratio is in the range of 1 to 50%, the firing temperature is in the range of 50 to 150 ° C., and the firing time is divided into 1 and 2 times, respectively, which is 30 minutes to 2 hours and 1 to 4 hours, respectively. Light emitting element.  The method of claim 12, Screen printing, spin coating, inkjet printing, a doctor blade, a mold method, etc. are used as a method for forming a second layer excitation coating layer on a silicon wafer substrate, and the thickness of the final excitation coating layer after firing is 1 micrometer (um) to A flat white light source, characterized in that within the range of 1 millimeter (mm). The method of claim 12, In order to secure optical uniformity of the emitted plane white light, a powder composed of a silicon oxide (SiO ₂ ) component is added to the excitation coating layer, which is the second layer, or photo-patterning the transparent or opaque electrode of the excitation source emission layer into a uniform shape. Plane white light source. The method of claim 12, In manufacturing a white light source, a planar white light emitting device comprising forming an excitation coating layer, which is a second layer, by a large area substrate first, and then cutting the substrate to form an organic light emitting device for compatibility with an organic deposition apparatus. The method of claim 12, When fabricating a white light source using a transparent or opaque silicon wafer substrate, in order to increase the light efficiency of the transmitted white light and to simplify the process, fabrication of the organic light emitting device as the first layer is performed in advance and fabrication of the excitation coating layer as the second layer is performed later. Flat white light emitting device, characterized in that. The method of claim 1, It relates to a liquid crystal display device by the flexible thin film silicon wafer substrate and a backlight device having a color filter function used therein, In the light source is an organic light emitting device using a flexible thin transparent silicon wafer substrate comprising a light emitting layer laminated on the positive electrode and the negative electrode with an organic film, In particular, the light emitting layer has a structure in which three light emitting layers of red, green, and blue are stacked, and a blue light emitting layer is stacked on the top layer. Each light emitting layer is composed of an ITO transparent electrode including a transflective metal buffer layer to be a positive electrode or a negative electrode, And a transparent high refractive index diffusion layer along the opposite side of the substrate on which the light emitting layer (s) are formed. The method of claim 17, The organic light emitting device, characterized in that the blue light emitting layer as a top layer in order to increase the surface light efficiency of the red, green, blue tricolor light of the light emitting layer, the red, green light emitting layer is stacked in any order. The method of claim 17, An organic light emitting device according to claim 1, wherein a diffusion layer is first formed by a large-area silicon wafer substrate, and the organic light emitting device is manufactured by cutting the substrate for compatibility with the organic vapor deposition apparatus. The method of claim 17, An organic light emitting device according to claim 1, wherein in order to increase the light efficiency of the transmitted light and simplify the process, the organic light emitting device is fabricated in advance, and the diffusion layer is fabricated later. The method of claim 17, The electrode formed at the interface of the light emitting layer is formed by plasma-exciting ions and oxygen ions of the sputter target of the electrode in a reaction chamber provided with a grid film for controlling oxygen ions by applying a predetermined voltage and the sputter target of the electrode. An organic light emitting device, characterized in that. The method of claim 1, The present invention relates to a separate stacked organic light emitting device for a field sequential color type liquid crystal display and a backlight light source by the flexible thin film silicon wafer substrate. The light source is characterized by consisting of a double-sided organic light emitting device that emits light at the same time and the front and the front organic light emitting device at the same time using a polymer, low molecular organic material, The double-sided organic light emitting device is characterized in that the light emitting layer is laminated in green, the front organic light emitting device is sequentially stacked in red, blue, and further characterized by combining the two organic light emitting devices, Consists of a transparent electrode including an ultra-thin metal layer to be a negative electrode or a positive electrode at the same time between the light emitting layer of the double-sided organic light emitting device, In the front organic light emitting device, a metal having a high reflectance is included between the substrate and the transparent electrode before the transparent positive electrode is formed on the substrate. When the double-sided organic light emitting device and the front-side organic light emitting device are combined, a transparent sealant is used and a moisture absorbent is inserted into a portion other than the light emitting layer, and the distance between the double-sided organic light emitting device and the front organic light emitting device is maintained at about 1 μm. , Separated stacked organic light emitting device for a field sequential color type liquid crystal display device and a backlight light source, characterized in that the diffusion layer is inserted on the substrate to obtain light uniformity and high brightness in the combined device. The method of claim 22, The stacked organic light emitting device for a field sequential color type liquid crystal display device and a backlight light source, wherein the light emitting layers of the double-sided organic light emitting device and the front organic light emitting device are stacked in one or more layers. The method of claim 22, In combining the double-sided organic light emitting device and the front organic light emitting device, Field sequential color, characterized by inserting a sealant mixed with a spacer of spherical and square pillars between a double-sided light emitting substrate and a top-emitting substrate, not only 1 μm but also a range of 0.5 μm to 20 μm Separated stacked organic light emitting device for liquid crystal display and backlight light source. The method of claim 1, In manufacturing the double-sided and front-side organic light emitting device, Preparing a flexible thin film silicon wafer substrate, Forming a positive electrode on an upper surface of the substrate; Forming an organic emission layer by sequentially laminating a hole injection layer, a hole transport layer, a light emitting layer, a hole limiting layer, an electron transport layer, and an electron injection layer on the positive electrode; Forming a transparent electrode such as ITO between the light emitting layer of the double-sided organic light emitting device to be a negative electrode and a positive electrode at the same time; Forming an ultra-thin metal layer by laminating metals such as LiF / Al, Ag, Ca, Mg, etc. in a thickness of 0.1 to 20 nm to prevent damage to the organic light emitting layer between the organic light emitting layer and the transparent electrode; When the double-sided organic light emitting device and the front organic light emitting device is combined using a transparent sealant and inserting a moisture absorbent in the non-light emitting layer, the interval is inserted into a spacer to form a 0.5 ㎛ ~ 20 ㎛, Separately stacked organic for field sequential color type liquid crystal display and backlight light source comprising the step of sequentially forming a diffusion layer on the light emitting substrate in order to obtain a uniformity and high brightness of light in the combined device Light emitting device manufacturing method. The method of claim 1, A separate stacked organic light emitting device for a bidirectional backlight light source by the flexible thin film silicon wafer substrate, The light source is characterized in that the organic light-emitting device consisting of a rear organic light emitting device using a polymer, a low molecule, The rear organic light emitting device is characterized in that the stack of two layers of a white light emitting layer and a green light emitting layer, it characterized in that the combination of the two rear organic light emitting devices, It is composed of a transparent electrode including an ultra-thin metal layer to be a negative electrode or a positive electrode at the same time between the light emitting layer of the rear organic light emitting device, The uppermost negative electrode of the rear organic light emitting device is composed of a metal having high reflectance and low work function, and in particular, when applied to a reflective and transmissive liquid crystal display device, it is also used as a reflector. When combining the two rear organic light emitting device using a transparent epoxy or sealant, characterized in that the absorbent is inserted into the non-light emitting layer, In order to obtain the uniformity and high brightness of the light to the combined device, it characterized in that the diffusion film is inserted on the substrate that the light is emitted, Organic light-emitting device, characterized in that it is used in two-way backlight applications including the screen inside and outside the window of the cell phone using a two-way light source. The method of claim 26, The light emitting layer of the organic light emitting device of the rear organic light emitting device is laminated in multiple layers of one or more layers, each of which is used in a two-way backlight application including a screen of the inner and outer windows of a mobile phone using a high brightness and high intensity light source. The method of claim 26, In combining the rear organic light emitting device, An organic light emitting device characterized in that it is used in a two-way backlight application including an inner and outer window screen of a mobile phone by inserting a sealant mixed with a spacer of spherical and square pillars between two back emitting substrates. The method of claim 1, In manufacturing the rear organic light emitting device, Preparing a flexible thin film silicon wafer substrate, Forming a positive electrode on an upper surface of the substrate; Forming an organic emission layer by sequentially laminating a hole injection layer, a hole transport layer, a light emitting layer, a hole limiting layer, an electron transport layer, and an electron injection layer on the positive electrode; Forming a transparent electrode such as ITO between the light emitting layer of the organic light emitting device to be a negative electrode and a positive electrode at the same time; Forming an ultra-thin metal layer by laminating metals such as LiF / Al, Ag, Ca, Mg to a thickness of 0.1 to 20 nm to prevent damage to the organic light emitting layer between the organic light emitting layer and the transparent electrode; Inserting a moisture absorbent into a portion other than the light emitting layer using a transparent sealant when combining the two rear organic light emitting elements; Organic light emission, characterized in that it is used in two-way backlight applications including the inner and outer window screen of the mobile phone by sequentially forming a diffusion layer on the light emitting substrate in order to obtain the uniformity and high brightness of the light to the combined device Device fabrication method. The method according to claim 1, 17, 22, 26, In forming a diffusion layer on the silicon wafer substrate, A backplane planar light source and a flexible organic light emitting device of a flexible liquid crystal display device, characterized in that a diffusion sheet in the form of a film is attached onto a substrate or applied using a transparent epoxy resin. The method according to claim 1, 17, 22, 26, In forming a diffusion layer on the substrate, A backplane planar light source and a flexible organic light emitting device of a flexible liquid crystal display, characterized by adding a powder composed of a silicon oxide (SiO ₂ ) component to an epoxy resin layer to secure optical uniformity of emitted light. The method according to claim 1, 17, 22, 26, As a method for forming a diffusion layer on a silicon wafer substrate, screen printing, spin coating, inkjet printing, doctor blade, mold method, laminating, etc. are used, and the thickness of the diffusion layer after firing is 1 micrometer (um) to 1 millimeter (mm). A backplane planar light source and a bendable organic light emitting element of a bendable liquid crystal display, characterized in that it is within the range. The method according to claim 9, 17, 22, 26, As a method of manufacturing a transparent electrode formed between the light emitting layer, using a method such as RF sputter, Grid RF sputter, DC sputter, DC pulse sputter, ALD (atomic layer deposition), PEALD (plasma enhanced atomic layer deposition) Organic light emitting device. The method according to claim 9, 17, 22, 26,        In order to minimize damage to the organic thin film when forming the ITO transparent electrode formed between the light emitting layer, two or more layers such as LiF / Al / Ag, Ca / Ag, or Ag / Ca are laminated to form an ultra thin metal. And it is characterized in that the alloy (alloy) in order to adjust the work function of the metal and to increase the adhesion to the organic light emitting film, characterized in that the total metal buffer layer has a thickness of 1-20 nanometers (nm) range Organic light emitting device. The method according to claim 9, 17, 22, 26, After forming ITO which is a transparent electrode on the ultra-thin metal upper surface, An organic light-emitting device characterized in that the plasma treatment with oxygen, argon and nitrogen ions for a predetermined time at atmospheric pressure or vacuum in order to increase the work function of the ITO and the adhesion to the organic material. The method according to claim 8, 17, 22, 26, In order to improve the lifetime and production yield of the organic light emitting device, An organic light emitting device, characterized in that for photo-patterning the lowest transparent or opaque electrode in a uniform shape. The method according to claim 8, 17, 22, 26, An organic light emitting device comprising the use of an organic material layer such as Alq ₃ , NPB or an inorganic thin film layer such as SiO _x , Si _x N _{x in} the manufacture of an organic light emitting device for the purpose of preventing penetration of moisture and oxygen in the device. The method according to claim 8, 17, 22, 26, The emission layer may further include a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, wherein the organic light emitting layer is configured between the hole transport layer and the electron transport layer, respectively. The method according to claim 8, 17, 22, 26, In the process of forming the organic light emitting layer, for example, a hole injection layer, a hole transport layer, a light emitting layer, a hole limiting layer, an electron transport layer, an electron injection layer, An organic light-emitting device comprising any one selected from vacuum thermal evaporation using a fine metal mask for high definition, evaporation using a laser beam, evaporation using inkjet, or evaporation using color patterning. The method according to claim 8, 17, 25, 29, In order to make the organic light emitting device medium or large, An organic light emitting device manufacturing method characterized by manufacturing a small size organic light emitting device and attaching it in the form of a checkerboard or tile to enlarge the size. The method of claim 22, 26, The organic light emitting device of claim 1, wherein the organic light emitting layer of the light emitting device uses one organic light emitting material or two or more organic light emitting materials. The method of claim 22, 26, When the organic light emitting layer of the light emitting device uses two or more organic light emitting materials, in order to obtain good color purity and high brightness, a specific organic host light emitting material, for example, Alq3, NPB, CBP, DPVBi, etc. An organic dopant light emitting material, for example, an organic light emitting device comprising doping an organic dopant light emitting material such as green dopant C545T, a red dopant DCM2, DCJTB, a blue dopant perylene, or the like into an organic host light emitting material. The method according to claim 22, 26, In the light emitting layer of the organic light emitting element, In addition to sequentially stacking at least one selected from among red, green, and blue light emitting layers, a single color with high luminance is produced by using all layers as one color, for example, all light emitting layers as red, green, blue, or white. An organic light emitting device characterized in that. The method of claim 22, In manufacturing the front organic light emitting device, a metal having a high reflectance, such as Al, Cr, Ag, or Ni APC (Ag, Pd, Cu alloy), etc., is formed between the substrate and the electrode to serve as a reflector. An organic light emitting element. The method according to claim 25 and 29, In manufacturing and combining the two organic light emitting diodes, two organic light emitting diodes having the same shape of light emitting regions (including those having different light emitting regions) are manufactured to have different positions of the respective light emitting regions, so that the pads of the electrodes are different from each other. An organic light emitting device manufacturing method characterized by not overlapping. The method according to claim 25 and 29, In combining and cutting the two organic light emitting diodes, the organic light emitting diode is fabricated on a large-area substrate, placed in a predetermined mold, and aligned exactly, inserting a hygroscopic agent, and then applying a sealant to combine the organic light emitting diodes. Thereafter, the upper and lower plates are simultaneously scribed. The method according to claim 25 and 29, The organic light emitting device, In order to improve the service life, a slotted absorbent (BaO, CaO, MgO, etc.) is inserted into the substrate in order to insert the absorbent into the remaining portions except the emitting region, and then the substrate is bonded using a transparent epoxy or sealant, A method of fabricating an organic light emitting device, characterized in that to bond the region using a transparent epoxy or sealant. The method according to claim 25 and 29, In combining the two organic light emitting device, the organic light emitting device manufacturing method, characterized in that formed in a high-purity nitrogen atmosphere or vacuum. The method according to claim 25 and 29, In combining the two organic light emitting devices, In keeping the gap constant, after forming a pattern with PR, SiO _x , Si _x N _x , forming an organic material and a transparent electrode, forming a SiO layer as a transparent barrier layer on the transparent electrode, Forming a protective layer of a material such as Ca, CaO, Ba, BaO, Mg, MgO in the form, and then organic light emitting device manufacturing method comprising combining the two organic light emitting devices at a predetermined interval. With respect to claims 25 and 29, To form the organic light emitting device in a medium or large size, a pattern is formed of PR, SiO _x , Si _x N _x , and the like, and then a light emitting layer, a transparent barrier layer, and a protective layer are stacked on the prepared substrate. An organic light emitting device manufacturing method characterized in that the insertion and coupling. About claim 1, 17, 22, 26, In using the transparent thin film silicon wafer as a substrate, Forming an insulating layer such as SiO _x , SiN _x between the substrate and the transparent or opaque electrode or the substrate and the reflective layer before forming the transparent or opaque electrode on the upper surface of the substrate.