KR20050087552A - In-plane switching mode liquid crystal display device and method for fabricating the same - Google Patents

Abstract

In the present invention, the projection can be configured so that the same electric field as that of the transverse electric field electrode is applied to the minor direction edge portion of the opening region, thereby preventing the reverse domain.

In order to shield the electric field from the front gate wiring, the pixel electrode may be extended toward the front gate wiring to effectively shield the electric field of the front gate wiring and increase the storage capacitor.

In addition, in forming the transverse electric field electrodes in the direction crossing the data line, it is possible to improve the viewing angle by forming the domain dividing method in which the transverse electric field electrodes are formed in both directions which are symmetrical to each other. The opening ratio and the storage capacitor can be increased by forming the storage capacitor region including one storage capacitor or the opening region. Furthermore, by applying the electric field shielding structure in the front gate wiring to the domain division method, it is possible to increase the aperture ratio, the viewing angle, and the storage capacitor.

Description

In-plane switching mode liquid crystal display device and method for fabricating the same

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device, and more particularly to an in-plane switching (IPS) liquid crystal display device.

Recently, liquid crystal displays have been spotlighted as next-generation advanced display devices with low power consumption, good portability, technology-intensive, and high added value.

The liquid crystal display device is formed by injecting liquid crystal between two substrates on which transparent electrodes are formed, and placing upper and lower polarizers on the upper and lower substrates, and changing the polarization characteristics of light according to the anisotropy of the liquid crystal molecules. It corresponds to the non-light emitting element obtained.

Currently, an active matrix liquid crystal display (AM-LCD), in which thin film transistors (TFTs), which are switching elements that open and close each pixel, is disposed for each pixel, has an excellent resolution and video performance. The most attention is.

In general, a liquid crystal display includes a color filter substrate on which a common electrode is formed, an array substrate on which a pixel electrode is formed, and a liquid crystal filled between two substrates. In such a liquid crystal display, a vertical electric field is applied between the common electrode and the pixel electrode. By the method of driving a liquid crystal, it is excellent in characteristics, such as a transmittance | permeability and an aperture ratio.

However, the liquid crystal driving by the vertical electric field described above does not have excellent viewing angle characteristics. Therefore, a transverse electric field type liquid crystal display apparatus having a wide viewing angle characteristic by driving a liquid crystal by a horizontal electric field has been proposed to improve this.

1 is a view illustrating a driving principle of a general transverse electric field type liquid crystal display device.

As illustrated, the upper substrate 10, which is a color filter substrate, and the lower substrate 20, which is an array substrate, are spaced apart from each other, and the liquid crystal layer 30 is disposed between the upper substrate 10 and the lower substrate 20. In this interposed structure, both the common electrode 22 and the pixel electrode 24 are formed on the inner surface of the lower substrate 20.

The liquid crystal layer 30 is operated by the horizontal electric field 26 of the common electrode 22 and the pixel electrode 24, and the liquid crystal molecules in the liquid crystal layer 30 are moved by the horizontal electric field so that the viewing angle is widened. It becomes

For example, when viewed from the front, the transverse electric field type liquid crystal display may be visible in a range of about 80 ° to 85 ° in the up / down / left / right directions.

Hereinafter, an electrode arrangement structure of a conventional array substrate for a transverse electric field type liquid crystal display device will be described in detail with reference to the drawings.

2 is a schematic plan view of a conventional array substrate for a transverse electric field type liquid crystal display device.

As shown, the gate wiring 40 and the data wiring 42 are formed to cross each other, and the thin film transistor T is formed at the intersection of the gate wiring 40 and the data wiring 42. An intersection area of the gate line 40 and the data line 42 is defined as the pixel area P. FIG.

The common wiring 44 is formed to be spaced apart from the gate wiring 40 by a predetermined distance, and in the common wiring 44 positioned in the pixel region P, a plurality of common electrodes are formed in a direction parallel to the data wiring 42. 46 is forked. The first lead wire 48 is formed to be connected to the thin film transistor T. In the first lead wire 48, a plurality of common electrodes 46 and the common electrode 46 are staggered from each other at intervals between the common electrodes 46. The pixel electrode 50 is branched.

A second lead wire 52 is formed at a position where the ends of the pixel electrodes 50 are connected and overlap the common wire 44.

The separation interval between the common electrode 46 and the pixel electrode 50 corresponds to a substantially opening region II for driving the liquid crystal by a transverse electric field. In this figure, a four-block structure having four opening regions II is shown. An example is shown. That is, the structure in which three common electrodes 46 and two pixel electrodes 50 are alternately arranged for each pixel area P is illustrated.

For convenience of description, the common electrode 46 positioned adjacent to the data line 42 includes the first common electrode 46a and the common electrode 46 positioned inside the pixel region P includes the second common electrode ( 46b), the first common electrode 46a located at the outer side of the first and second common electrodes 46a and 46b is a poor image quality occurring between the data line 42 and the pixel electrode 50. For the purpose of minimizing cross talk and preventing light leakage, the aperture ratio is lowered than that of the second common electrode 46b.

The problem of the opening ratio drop has a close relationship with the rubbing direction that determines the initial direction of the liquid crystal molecules and the electric field direction that induces driving of the liquid crystal molecules when voltage is applied.

In addition, the arrangement structure of the electrodes forming the conventional transverse electric field has a problem of reducing the aperture ratio in relation to the rubbing direction and the electric field direction 54.

3A and 3B are enlarged views of the region “III” of FIG. 2, and are illustrated based on a correlation between a rubbing direction and an electric field direction, and a rubbing direction for inducing an initial arrangement of liquid crystal molecules in a diagonal direction ( As an example, it is assumed that the transverse electric field is formed in the direction perpendicular to the pixel electrode and the common electrode when the voltage is applied, and the upper left direction in the lower right direction.

3A illustrates a voltage difference of 3 V between the common electrode and the pixel electrode under the condition that voltages of 5 V and 8 V are applied to the common electrode and the pixel electrode, and 8 V is applied to the data wiring. The first director 54 of the liquid crystal molecules is determined by the electric field due to the voltage difference.

In FIG. 3B, even when a 3 V voltage difference occurs between the common electrode and the pixel electrode, as shown in FIG. 3A, when the voltage applied to the data line is changed, a change occurs in the electric field of the actual driving region. Since the second director 58 is rotated slightly more than (54), a change in color may occur due to a signal voltage difference even under the condition that the same voltage is applied to the common electrode and the pixel electrode.

This problem can be solved by increasing the width of the common electrode located at the periphery of each pixel region. However, as the electrode becomes wider, the aperture ratio decreases.

In addition, the section between the data line and the common electrode is covered by the black matrix formed on the counter substrate for the purpose of preventing light leakage. As the bonding margin increases, the overlap region between the black matrix and the electrode increases, which also reduces the aperture ratio. It will work.

In order to solve this problem, the present invention is to improve the luminance without reducing the aperture ratio, the main objective of the reverse domain (reverse domain) that can occur in the aperture ratio improvement structure, the main purpose, and another purpose It is to provide a transverse electric field type liquid crystal display device which can shield an electric field in wiring.

In order to achieve the above object, in a first aspect of the present invention, there is provided a semiconductor device comprising: a gate wiring formed on a first substrate in a first direction; A data line formed in a second direction crossing the first direction; A thin film transistor formed at an intersection point of the gate line and the data line; A common electrode formed toward the first direction; A connection line connected to the common electrode and formed in the second direction; A common wiring connected to the common electrode through the connection wiring; A pixel electrode formed to be spaced apart from the common electrode in a direction corresponding to the common electrode and connected to the thin film transistor; A drawing line connected to the pixel electrode and overlapping in a state in which a connecting line and an insulator are interposed in the second direction; A second substrate disposed opposite the first substrate; And a liquid crystal layer interposed between the first and second substrates, wherein a separation section between the common electrode and the pixel electrode is defined as an opening region, and at least one of the common electrode or the pixel electrode is disposed at a short edge portion of the opening region. Provided is a transverse electric field liquid crystal display device, characterized in that a protrusion extending from one electrode is positioned.

The area | region which covers the uniaxial direction edge part of the said opening area | region is formed in the range which is non-overlapping with the common electrode or pixel electrode which defines an adjacent opening area | region, and the said projection part is a part of the said uniaxial direction edge part area | region. It is formed to correspond to the half area, the projecting surface of the protrusion is characterized in that the parallel surface structure.

According to a second aspect of the present invention, there is provided a semiconductor device comprising: a plurality of gate wirings formed in a first direction on a first substrate; A plurality of data lines formed in a second direction crossing the first direction; A plurality of thin film transistors formed at intersections of the plurality of gate lines and data lines; A common electrode formed toward the first direction; A connection line connected to the common electrode and formed in the second direction; A common wiring connected to the common electrode through the connection wiring; A pixel electrode formed to be spaced apart from the common electrode in a direction corresponding to the common electrode and connected to the thin film transistor; A drawing line connected to the pixel electrode and overlapping in a state in which a connecting line and an insulator are interposed in the second direction; A second substrate disposed opposite the first substrate; And a liquid crystal layer interposed between the first and second substrates, wherein the pixel electrode adjacent to the front gate line includes an extension pattern covering an area including an interval between the front gate line and the front gate line. A liquid crystal display device is provided.

The separation section between the common electrode and the pixel electrode is defined as an opening region, and a protrusion extending from at least one of the common electrode and the pixel electrode is positioned at two edge portions of the opening region in the axial direction. Is overlapped with the front-end gate wiring, and the extension pattern overlaps with the entire front-end gate wiring, or does not short with the pixel electrode formed in the pixel region including the front-end gate wiring, or It is characterized by overlapping with some.

The extension pattern may form an opening region with an outermost common electrode among the common electrodes, or overlap with an outermost common electrode among the common electrodes.

The extension pattern may overlap the entire front gate line in a range not shorted with the pixel electrode formed in the pixel region including the front gate line.

According to a third aspect of the present invention, there is provided a semiconductor device comprising: a gate wiring formed on a first substrate in a first direction; A data line formed in a second direction crossing the first direction; A thin film transistor formed at an intersection point of the gate line and the data line; A common electrode formed to be inclined in one direction from the first direction; A connection line connected to the common electrode and formed in the second direction; A common wiring connected to the common electrode through the connection wiring; A pixel electrode formed in a direction corresponding to the common electrode, spaced apart from the common electrode at a predetermined interval, connected to the thin film transistor, and formed to be inclined with the one direction with respect to the first direction; A drawing line connected to the pixel electrode and overlapping in a state in which a connecting line and an insulator are interposed in the second direction; A second substrate disposed opposite the first substrate; A liquid crystal layer interposed between the first and second substrates, wherein a separation section between the common electrode and the pixel electrode is defined as an opening region, and the opening region has a domain division structure in which liquid crystal molecules are arranged in different directions. A transverse electric field type liquid crystal display device is provided.

Protruding portions extending from at least one of the common electrode and the pixel electrode are located at both edges in the minor direction of the opening region, and the opening region has a two domain structure. A first capacitor electrode connected to the pixel electrode and a second capacitor electrode connected to the common electrode are sequentially overlapped with an insulator interposed therebetween. An outermost first transverse electric field electrode and an opening region are formed for each domain, and first and second capacitor electrodes are sequentially formed, and among the first and second capacitor electrodes, an electrode which forms the first transverse electric field electrode and a transverse electric field It is characterized by having a larger area than this another capacitor electrode.

In a fourth aspect of the invention, there is provided a method, comprising: forming a gate wiring on a substrate in a first direction; Forming a common electrode toward the first direction, forming a connection wire connected to the common electrode in a second direction crossing the first direction, and forming a common wire connected to the common electrode through the connection wire Wow; Forming a data line in the second direction; Forming a thin film transistor at an intersection point of the gate line and the data line; Forming a pixel electrode toward the first direction, the pixel electrode spaced apart from the common electrode at a predetermined distance, overlapping a connection line in the second direction, and forming an extraction line connected to the thin film transistor; And a separation area between the pixel electrode and the pixel electrode is defined as an opening area, and a protrusion extending from any one of the common electrode and the pixel electrode is positioned at a short edge portion of the opening area. Provided is a method of manufacturing an array substrate.

The pixel electrode and the common electrode may be formed to be inclined at a range of 0 ° to 90 ° with respect to the first direction, and the pixel electrode and the common electrode may be formed to be inclined at a range of 0 ° to 45 °. The protruding surface of the protruding portion is formed by an inclined surface structure or a parallel surface structure.

To this end, in the present invention, since the aperture ratio is substantially dependent on the size of the separation region between the common electrode and the pixel electrode in the transverse field type liquid crystal display device, in order to minimize the electrical interference in the data wiring, it serves as a transverse field electrode. The common electrode and the pixel electrode are to be formed in the direction crossing the data line.

In addition, in order to improve the aperture ratio, a storage capacitor is formed in the non-opening region, and specifically, a connection wiring connecting a plurality of common electrodes to each other and a drawing wiring connecting the plurality of pixel electrodes to each other are provided with the insulator interposed therebetween. We want to configure the primary storage capacitors in such a way that they overlap.

In order to prevent the generation of the reverse domain in the uniaxial edge portion of the opening region adjacent to the data line, a projecting portion in which a pattern of one of two transverse electric field electrodes extends to the edge portion of the opening region is formed. When the protrusion is configured, the same electric field as that of the transverse electric field electrode having the protrusion is applied, thereby preventing the generation of the reverse domain when the voltage is applied.

In addition, in order to shield the electric field from the front gate line, the end of the pixel electrode may be extended to a region covering a region separated from the front gate line or to a region covering a predetermined range of the front gate line, thereby forming a storage common structure. Alternatively, storage capacitors can be increased with storage common structures and shear gate structures.

In addition, a domain division structure is proposed to improve the viewing angle, wherein the domain division area may be formed as a storage capacitor or an area including an additional opening area and a storage capacitor. The electric field shielding structure of the domain division structure and the shear gate wiring may be provided as a merged structure.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings.

First Embodiment

This embodiment relates to an embodiment in which the aperture ratio is improved by forming a storage capacitor in a non-opening region.

4 and 5 are views of an array substrate for a transverse electric field type liquid crystal display device according to a first embodiment of the present invention. FIG. 4 is a plan view, and FIG. 5 is a cross-sectional view taken along the cutting line VV of FIG. 4. One cross section.

As illustrated, a gate line 114 is disposed on the substrate 110 in a first direction and has a gate electrode 112. The plurality of common electrodes 116 are inclined at an angle toward the first direction. Is formed. Both ends of the plurality of common electrodes 116 are connected to each other by connection wires 118 respectively formed in a second direction crossing the first direction, and the connection wires 118 have a minimum of implementing a screen. A common line 120 is formed to electrically connect the common electrode 116 for each pixel region P as a unit.

A gate insulating layer 122 is formed in an area covering the gate electrode 112, the gate wiring 114, the common electrode 116, the connection wiring 118, and the common wiring 120, and the upper portion of the gate insulating film 122. The semiconductor layer 124 is formed at a position covering the gate electrode 112, and the source electrode 126 and the drain electrode 128 are formed on the semiconductor layer 124 so as to be spaced apart from each other.

The data line 130 is connected to the source electrode 126 in an integrated pattern in the second direction.

An area where the gate line 114 and the data line 130 intersect is defined as the pixel area P described above.

The gate electrode 112, the semiconductor layer 124, the source electrode 126, and the drain electrode 128 form a thin film transistor (T).

A passivation layer 132 is formed in an area covering the thin film transistor T and the data line 130, and a drain contact hole 134 is formed in the passivation layer 132 to partially expose the drain electrode 128. It is.

On the passivation layer 132, a plurality of pixel electrodes 136 are alternately formed with the common electrode 116 so as to be spaced apart from each other in a direction corresponding to the common electrode 116.

Both ends of the pixel electrode 136 are connected to each other by lead wires 138 formed in the second direction. The pixel electrode 136 is substantially connected to the thin film transistor T through one lead line 138 connected to the drain electrode 128 through the drain contact hole 134.

An alignment layer 140 is formed on the entire surface of the substrate covering the pixel electrode 136 and the lead wire 138.

In addition, in the alignment process direction of the alignment layer 140, the direction of the electric field between the data line 130 and the connection line 118 is fixed, and only the direction of the transverse electric field between the transverse electric field IE in the pixel region P is changed. In order to do this, it is characterized in that the direction corresponding to the first direction (left-> right). In other words, the orientation processing direction is set in a direction orthogonal to the data line 130.

In the present embodiment, the thin film transistor is an example of a bottom gate method using an amorphous silicon material as a semiconductor layer, but may be changed to various structures such as a top gate method using a polysilicon material. Do.

For convenience of description, the common electrode 116 and the pixel electrode 136 are collectively referred to as an in-plane electrode (IE).

The separation area between the common electrode 116 and the pixel electrode 136 is defined as an opening area AA that arranges liquid crystals by a transverse electric field between two electrodes when a voltage is applied.

The overlapping region of the connection line 118 and the lead line 138 forms a storage capacitor Cst with an insulator interposed therebetween.

In this embodiment, the storage capacitor Cst can be increased in a range that does not lower the aperture ratio.

In order to minimize cross talk with the data line 130, one side adjacent to the data line 130 of the lead line 138 formed as an integrated pattern with the pixel electrode 136 may be connected to a connection line ( It is preferable to be located inside the 118, and one side of the opening area AA is not particularly limited, but in order to prevent the misalignment of the storage capacitor Cst from being misaligned, It is preferable to form.

The number and design of the common electrode 116 and the pixel electrode 136 may be changed in various ways, and the common electrode 116 is disposed as the outermost transverse electric field IE. It may also include the case where the 136 is located as the outermost electrode.

In general, in order to simplify the mask process, the common electrode is formed using an opaque metal material in the gate fabrication step, and the pixel electrode is made of a transparent conductive material, thereby reducing the formation area of the black matrix and improving the aperture ratio without increasing the number of mask processes. In order to achieve this, it is preferable to form a common electrode as the outermost electrode.

In addition, the inclination angles θ1 and θ2 of the transverse electric field electrode IE may be formed to be inclined in a range of 0 ° to (±) 90 °, more preferably 0 ° to (±) 45 ° based on the first direction. Can be. That is, it can be inclined in an acute angle range with respect to the first direction, and the drawing presents an example formed in an inclined range in the acute angle range in the (+) direction with respect to the first direction.

If the transverse field electrode IE is not disposed to be inclined, the liquid crystal material may include a dopant of a predetermined amount to adjust the degree of freedom of the liquid crystal in a desired direction.

In addition, in order to reduce electrical interference with data wiring, the width of the outermost transverse electric field electrode had to be widened, and thus the opening ratio was limited. However, in the present invention, the opening area is formed in the direction crossing the data wiring. The aperture ratio can be improved by reducing the width of the transverse electric field electrode portion (corresponding to the connection wiring and the drawing wiring in the drawing) positioned corresponding to the data wiring.

For example, the data line and the connection line may be spaced apart from 1 to 5 μm, and the width of the connection line may be selected in a range of 5 to 10 μm.

The connection wiring is not substantially used as a transverse electric field electrode, but may be regarded as the outermost common electrode positioned in a direction corresponding to the data wiring.

Hereinafter, another embodiment of the present invention relates to a structure for preventing image quality defects in the edge portion of the opening area in the structure in which the transverse electric field electrode is formed in the direction crossing the data wiring.

Second Embodiment

6 and 7 are views of an array substrate for a transverse electric field type liquid crystal display device according to a second embodiment of the present invention. FIG. 6 is a plan view, and FIG. 7 is an enlarged view of the area “VII” of FIG. 6. A description will be given focusing on structural features that are distinguished from the first embodiment.

As shown in the drawing, the common electrode 216 and the pixel electrode 236 are formed to be spaced apart from each other in a direction crossing the data line 230, and the spaced area between the common electrode 216 and the pixel electrode 236 is separated from each other. It is defined as the opening area AA.

In the present embodiment, in order to prevent a reverse domain from occurring due to electrical interference in the neighboring data line 230 at the unidirectional edge portion EP of the opening area AA, a transverse electric field is generated. Projecting part (PP) consisting of a pattern extending from the electrode (IE) is characterized in that it is further configured.

For example, in the present exemplary embodiment, a protrusion PP having an inclined surface is provided at a corner part CP of the common electrode 216 and the connection wire 218 in one direction.

Accordingly, as shown in FIG. 7, in forming an in-plane switching field (IF) between the common electrode 216 and the pixel electrode 236, an edge portion EP adjacent to the data line 230 is formed. ), The protruding portion PP forming an integrated pattern with the common electrode 216 is extended to block the influence of the electric field on the data line 230.

The protrusion PP is formed in one direction, and the position of the protrusion PP may be determined according to the direction of the transverse electric field IF.

In addition, the present embodiment may include a case in which the protrusion PP is selectively formed in the pixel electrode 236 portion (a pixel electrode and the lead-out wiring) in addition to the common electrode 216.

That is, the essential configuration of the present embodiment is a protrusion PP extending inwardly into the opening region AA from any transverse electric field IE located at one edge portion EP of the opening region AA. It includes, and the protrusion PP has an inclined surface in a direction corresponding to the transverse electric field (IF) direction.

In addition, the formation range of the protrusion PP is preferably formed so as not to overlap with the neighboring transverse electric field IE (that is, the transverse electric field electrode defining different opening regions), and the data line 230 and the data line 230. Even if the edge portion EP in the same direction is formed to cover only about half, the reverse domain can be suppressed.

Hereinafter, another embodiment of the present invention is an embodiment of a structure in which image quality characteristics are further improved than the second embodiment.

Third Embodiment

8 and 9 are views of an array substrate for a transverse electric field type liquid crystal display device according to a third embodiment of the present invention. FIG. 8 is a plan view, and FIG. 9 is an enlarged view of one of the opening regions of FIG. 8. It demonstrates centering on the structural features distinguished from the first and second embodiments. For convenience of explanation, the corner portion of the common electrode and the connection wiring is called the common electrode portion, and the corner portion of the pixel electrode and the lead-out wiring is referred to as the pixel electrode portion.

As shown in the figure, in forming the opening area AA in the direction intersecting with the data line 330, the protruding portion PP is formed on all of the short axis direction EP of the opening area AA. . The protrusion PP includes a first protrusion PP1 formed on the common electrode 316 and a second protrusion PP2 formed on the pixel electrode 336, and the first and second protrusions PP1 and PP2. ) Has an inclined surface in a direction corresponding to the direction of the transverse electric field IF, and the forming range of the protrusion PP may apply to the forming range of the protrusion PP according to the second embodiment.

In this embodiment, in order to block the generation of the reverse domain at the edge portion EP of the opening area AA adjacent to the data line 330, the pattern of one of the transverse electric field electrodes IE is formed at the edge portion EP. By projecting a predetermined area inward, it is characterized in that the reverse domain is prevented from being generated by applying the same electric field to the transverse electric field (IE) and the protrusion (PP) when voltage is applied.

Although not shown in detail in the drawings, a transverse electric field type liquid crystal display device including an array substrate according to the present embodiment, another substrate disposed to face the array substrate, and a liquid crystal layer interposed between the two substrates, The same applies to the embodiments described below.

Hereinafter, another embodiment of the present invention is an embodiment including the protrusion of the parallel plane structure which can increase the opening ratio than the protrusion of the inclined plane structure as a modification to the second embodiment.

 Fourth Embodiment

FIG. 10 is a diagram illustrating an array substrate for a transverse electric field type liquid crystal display device according to a fourth exemplary embodiment of the present invention, and since the basic structure of the second exemplary embodiment may be applied as it is, the opening region is shown as a center.

As illustrated, a protrusion PP extending from the transverse electric field IE is positioned at one edge portion EP of the opening area AA.

Unlike the second and third embodiments, the protrusion PP does not have an inclined surface and has a parallel surface structure with respect to a data wiring direction not shown.

In addition, the forming range of the protrusion PP may be applied in the same manner as the protrusion according to the second embodiment.

For example, the protrusion PP extends at a predetermined interval from the pixel electrode 436 into the opening area AA.

Although not shown in the drawings, since the protrusion PP according to the present exemplary embodiment has a parallel plane structure, when the protrusion PP covers only half of the edge portion EP, the transverse electric field electrode IE is formed in the aforementioned first direction. It is preferable to form the end surface of the protrusion PP in an inclined direction.

According to the present embodiment structure, the transverse electric field electrode having the protruding portion at the time of applying the voltage, while securing the aperture ratio by the area difference of the parallel and protruding surface projections, induces the direction of the electric field at the edge portion toward the transverse electric field forming direction to deteriorate the image quality characteristics. Can be prevented.

As an example, the extension width to the opening area of the protrusion of the parallel plane structure may be selected in the range of 5 μm or less in consideration of the process margin.

Hereinafter, another embodiment of the present invention is a modified embodiment of the third embodiment, in which all of the edge portions of the opening region adjacent to the data wiring are provided with parallel surface structure protrusions.

Fifth Embodiment

FIG. 11 is a diagram illustrating an array substrate for a transverse electric field type liquid crystal display device according to a fifth exemplary embodiment of the present invention, and is described with reference to a modified part of the structure of the fourth exemplary embodiment. The common electrode 516 and the pixel electrode 536 have protruding portions PP at both sides of the edge portion AA of the AA. Accordingly, the uniaxial edge portion of the opening area AA may block generation of the reverse domain as the same electric field is applied to any one of the transverse electric field electrodes IE.

The forming range of the protrusion may be applied to the protrusion according to the fourth embodiment.

According to the structure according to the present embodiment, the opening ratio can be more secured than the inclined surface protrusion structure while preventing the reverse domain at the uniaxial edge portion of the opening area.

Hereinafter, another embodiment of the present invention is an embodiment of a structure in which the inclined surface structure and the parallel surface structure are merged as the structure of the uniaxial protrusion of the opening area.

Sixth Embodiment

12 is a diagram of an array substrate for a transverse electric field type liquid crystal display device according to a sixth embodiment of the present invention. Referring to the modified part of the structure of the fifth embodiment, the unidirectional edge of the opening area AA is illustrated. In providing the reverse domain prevention means in the portion EP, the common electrode 616 has a slope protrusion (s-PP; slope PP), and the pixel electrode 636 has a parallel surface protrusion (p-PP; plat PP). It is characterized in that each is formed.

In the present embodiment, although not shown in the drawings, the common electrode 616 includes a parallel projection and the pixel electrode 636 includes an inclined projection.

In the present embodiment, the tradeoff between the image quality and the aperture ratio can be improved as compared with the embodiment having only one structure by including a protrusion in which the inclined surface structure and the parallel surface structure are merged.

Hereinafter, another embodiment of the present invention is an embodiment of the structure for shielding the electric field with the front gate wiring.

Since the transverse electric field electrode according to the present invention is formed in a direction parallel to the gate wiring, a structure for electric field shielding with the front end gate wiring may be required unlike the conventional transverse electric field electrodes.

Seventh Embodiment

13 and 14 are plan views of an array substrate for a transverse electric field type liquid crystal display device according to a seventh embodiment of the present invention. The structure of the third embodiment is based on the structure of the third embodiment. 13 is an example of configuring a storage capacitor in a storage common structure, and FIG. 14 illustrates a storage common structure and a front gate of a storage common structure. The storage capacitor is composed of a mixture of structures.

13 illustrates a pixel electrode 736 defining an outermost common electrode b (border) -716 and an opening area AA when the outermost transverse electric field electrode adjacent to the front gate wiring is a common electrode. An extension pattern e (extension-P1) includes a region overlapping the common electrode b-716 at a predetermined interval and a region covering a spaced interval between the front gate wiring p (previous portion) -714. .

In this case, the extension pattern e-P1 overlaps with each other in a range that does not weaken the electric field formation in the outermost common electrode b-716, and the outermost common electrode b-716 and the extension pattern e-P1. An insulator is interposed between).

That is, the overlapping region between the connection wiring 718 and the drawing wiring 738 described above forms the first storage capacitor Cst1 and overlaps the extension pattern e-P1 and the outermost common electrode b-716. The region forms a second storage capacitor Cst2.

The extension pattern e-P1 of FIG. 14 extends the extension pattern (e-P1 of FIG. 13) of FIG. 13 to a region overlapping the front gate line p-714 to form a second storage. The capacitor Cst2 may be configured as a merged structure of the storage common structure and the front gate structure, thereby increasing the capacity of the second storage capacitor Cst2 than in FIG. 13. In this case, it is important that the extension pattern e-P2 is formed to overlap the front gate line p-714 in a range not shorted with the pixel electrode 736 of the neighboring pixel.

That is, the seventh embodiment discloses an embodiment in which the storage capacitor is increased along with the electric field shielding.

Hereinafter, another embodiment of the present invention is an embodiment of the structure that can further improve the aperture ratio by further configuring the opening region in the position adjacent to the front-end gate wiring by providing an electric field shielding structure.

Eighth Embodiment

FIG. 15 is a plan view of an array substrate for a transverse electric field type liquid crystal display device according to an eighth embodiment of the present invention, and will be described with reference to structural features distinguishing from the seventh embodiment.

As illustrated, the pixel electrode 836 includes an extension pattern e-P3 that is spaced apart from the outermost common electrode b-816 by a predetermined distance and extends adjacent to the front gate line p-814. do.

That is, the surface facing the outermost common electrode b-816 in the extension pattern e-P3 is used as the outermost pixel electrode b-836, and the other surface is the front gate wiring p-814. Overlap with each other to form a second storage capacitor Cst2.

In this embodiment, compared to the seventh embodiment, it is possible to further secure the opening area, and the increase of the storage capacitor can be expected through the application of the shear gate method.

The configuration of the other storage capacitor is applicable in the same manner as in the seventh embodiment.

Hereinafter, in another embodiment of the present invention, the transverse field electrodes are formed in the direction crossing the data lines, and are positioned in the same direction as the data lines and overlap the connecting wirings and the lead-out wirings connecting the plurality of transverse field electrodes to each other. By forming a storage capacitor, and by providing a structure to prevent the reverse domain by extending the lateral field electrode at the edge portion of the uniaxial opening region, to implement a structure for dividing the domain by pixel region to improve the viewing angle Yes.

Ninth Embodiment

16 to 18 are plan views of an array substrate for a transverse electric field type liquid crystal display device according to a ninth embodiment of the present invention, focusing on structural features distinguished from the eighth embodiment, and FIG. FIG. 17 is an example in which a domain partition region and a front gate wiring are configured as a second storage capacitor, and FIG. 18 is a modification of the FIG. 17. This is an example of a structure used as a storage capacitor.

16, the plurality of common electrodes 916 and the pixel electrodes 936 are formed to be spaced apart from each other in an inclined state in the (+) and (−) directions with respect to the first direction in which the gate wiring 914 is formed. Thus, the first and second domains D1 and D2 are formed.

The outermost common electrodes b-916 and b'-916 in the divided regions between the first and second domains D1 and D2 are connected to each other in an integrated pattern, and the outermost common electrodes b are connected to each other. The storage pattern 937, which is an integrated pattern with the pixel electrode, is formed to overlap each other with the insulator interposed therebetween to form the second storage capacitor Cst2 in a range in which both sides of -916 and b'-916 are exposed at predetermined intervals.

The present embodiment includes a multi-domain structure in addition to the two-domain structure, and also includes a feature of configuring the inter-domain partition as the second storage capacitor in the multi-domain structure.

FIG. 17 illustrates a structure in which a domain division structure according to FIG. 16 is applied to a structure using an overlapping region with a front gate wiring as a second storage capacitor according to the eighth embodiment, and includes a front gate wiring (p-914). Another third storage capacitor Cst3 of the overlapping area between the extension patterns e-P4 is configured.

18 is an embodiment in which an opening region is further formed in the domain division region.

For example, if the domain divided area DA is a triangular structure having a first area, the transverse electric field electrode having a triangular structure having an area smaller than the first area in the domain divided area DA may be formed. IE), a spaced area according to the two area differences is used as the opening area AA, and the transverse electric field electrode portion having a triangular structure can be used as the storage capacitor Cst with an insulator interposed therebetween.

Although not shown in detail in the drawings, the storage capacitor includes an overlapping region between the connection wiring and the lead wiring and an overlapping region with the front gate wiring in addition to the storage capacitor. In addition, such a configuration can maximize the effect when used when the inclination of the domain electric field becomes larger as the inclination of the transverse electric field electrode becomes larger.

Hereinafter, in another Example of this invention, as an Example about the manufacturing process about the said 3rd Example, this Example of manufacturing process may be applied to another Example structure.

10th Example

19A to 19F and 20A to 20F are step by step diagrams illustrating a manufacturing process of an array substrate for a transverse electric field type liquid crystal display device according to a tenth embodiment of the present invention. FIGS. 19A to 19F are plan views and FIGS. 20A to 20F. Is a cross-sectional view showing a section cut along the cutting line " XX-XX "

As shown in FIGS. 19A and 20A, a gate wiring 1014, a gate electrode 1012, a common wiring 1020, a common electrode 1016, and a connection wiring are formed on a substrate 1010 using a first metal material. 1018).

The gate wiring 1014 and the common wiring 1020 are formed to correspond to each other in a first direction, and the common electrode 1016 is formed to be inclined at a predetermined angle in an acute range in the first direction, and the connection wiring 1018. Is connected to both ends of the plurality of common electrodes 1016 to apply a signal supplied from the common wiring 1020 to the common electrode 1016.

For example, the common electrode 1016 includes a plurality, and each common electrode 1016 has a first protrusion PP1 at an inner edge thereof, and the first protrusions PP1 between each other are left and right. Can be placed alternately.

As an example, the first metal material may be selected from a metal material having a high specific resistance, and may be an aluminum-based metal material.

19B and 20B illustrate forming a gate insulating film 1022 in a region covering the gate wiring 1014, the gate electrode 1012, the common wiring 1020, the common electrode 1016, and the connection wiring 1018. The semiconductor layer 1024 is formed at a position covering the gate electrode 1012.

19C and 20C illustrate forming a source electrode 1026 and a drain electrode 1028 on the semiconductor layer 1024 so as to be spaced apart from each other, and are connected to the source electrode 1026 and intersected with a first direction. Forming the data lines 1030 in two directions.

In this step, by using the source electrode 1026 and the drain electrode 1028 as a mask, to remove the impurity semiconductor material exposed in the separation interval between the two electrodes, and to form a channel (ch) consisting of a pure semiconductor material region The semiconductor layer 1024 may include an active layer 1024a made of pure semiconductor material and an ohmic contact layer 1024b made of impurity semiconductor material.

The gate electrode 1012, the semiconductor layer 1024, the source electrode 1026, and the drain electrode 1028 form a thin film transistor (T).

19D and 20D are steps of forming a protective layer 1032 having a drain contact hole 1034 exposing a part of the drain electrode 1028 in a region covering the thin film transistor T. Referring to FIG.

19E and 20E are steps of forming the pixel electrode 1036 connected to the thin film transistor T on the passivation layer 1032.

In more detail, the plurality of pixel electrodes 1036 positioned to be spaced apart from each other in a direction corresponding to the common electrode 1016 and the both ends of the pixel electrode 1036 are connected to each other. The drawing line 1038 is positioned in an area overlapping the connection line 1018 and substantially connected to the drain electrode 1028 through the drain contact hole 1034.

In this step, the spaced apart area between the common electrode 1016 and the pixel electrode 1036 is defined as an opening area AA, and the plurality of pixel electrodes 1036 are the first protrusions of the common electrode 1016. It is characterized in that it has a 2nd protrusion part PP2 in the edge part EP of the opening area AA facing PP1).

According to the first and second protrusions PP1 and PP2, the same electric field as that of the transverse electric field electrode can be formed to prevent the reverse domain at the uniaxial edge portion of the opening region.

For example, the first and second protrusions PP1 and PP2 are formed to be inclined in a direction corresponding to the transverse electric field direction.

For example, the pixel electrode 1036 and the lead wire 1038 may be selected from a transparent conductive material.

19F and 20F illustrate forming an alignment layer 1040 in an area covering the pixel electrode 1036 and performing alignment in the first direction.

The alignment treatment may be a photo alignment treatment using a rubbing method using a rubbing cloth or ultraviolet rays.

In the present invention, the rubbing direction is a first direction moving from left to right, and the direction of the electric field between the data wiring and the transverse electric field electrode connection patterns (connecting wire and lead wire) is fixed, and the transverse electric field electrode is formed to be inclined at a predetermined angle. Therefore, it is important to minimize the influence of the electric field on the data wiring.

However, the present invention is not limited to the above embodiments, and various modifications can be made without departing from the spirit of the present invention.

As described above, in the transverse type liquid crystal display according to the present invention, since the common electrode and the pixel electrode and the rubbing direction are designed in a direction corresponding to the gate wiring, the liquid crystal molecules positioned in the data wiring portion may be initially arrayed regardless of voltage. The direction can be maintained, thereby minimizing light leakage occurring in the data wiring part, and by forming the common electrode and the pixel electrode to cross the data wiring, the image quality characteristics can be improved by minimizing the influence of the electric field caused by the data wiring. have.

Moreover, in this invention, a protrusion part can be comprised so that the same electric field as a transverse electric field electrode may be applied to the axial direction edge part of an opening area | region, and can prevent a reverse domain.

In order to shield the electric field from the front gate wiring, the pixel electrode may be extended toward the front gate wiring to effectively shield the electric field of the front gate wiring and increase the storage capacitor.

In addition, in forming the transverse electric field electrodes in the direction crossing the data line, it is possible to improve the viewing angle by forming the domain dividing method in which the transverse electric field electrodes are formed in both directions which are symmetrical to each other. The opening ratio and the storage capacitor can be increased by forming the storage capacitor region including one storage capacitor or the opening region. Furthermore, by applying the electric field shielding structure in the front gate wiring to the domain division method, it is possible to increase the aperture ratio, the viewing angle, and the storage capacitor.

1 is a view for explaining a driving principle of a general transverse electric field type liquid crystal display device.

2 is a schematic plan view of a conventional array substrate for a transverse electric field type liquid crystal display device.

3A and 3B are enlarged views of the area “III” of FIG. 2.

4 and 5 are views of an array substrate for a transverse electric field type liquid crystal display device according to a first embodiment of the present invention. FIG. 4 is a plan view, and FIG. 5 is a cross-sectional view taken along the cutting line VV of FIG. 4. One section.

6 and 7 are views of an array substrate for a transverse electric field type liquid crystal display device according to a second embodiment of the present invention. FIG. 6 is a plan view, and FIG. 7 is an enlarged view of the area “VII” of FIG. 6.

8 and 9 are views of an array substrate for a transverse electric field type liquid crystal display device according to a third exemplary embodiment of the present invention. FIG. 8 is a plan view, and FIG. 9 is an enlarged view of one of the opening regions of FIG. 8.

10 is a diagram of an array substrate for a transverse electric field type liquid crystal display device according to a fourth embodiment of the present invention;

FIG. 11 is a diagram of an array substrate for a transverse electric field type liquid crystal display device according to a fifth embodiment of the present invention; FIG.

12 is a diagram of an array substrate for a transverse electric field type liquid crystal display device according to a sixth embodiment of the present invention;

13 and 14 are plan views of an array substrate for a transverse electric field type liquid crystal display device according to a seventh embodiment of the present invention;

15 is a plan view of an array substrate for a transverse electric field type liquid crystal display device according to an eighth embodiment of the present invention;

16 to 18 are plan views of an array substrate for a transverse electric field type liquid crystal display device according to a ninth embodiment of the present invention.

19A to 19F and 20A to 20F are step by step diagrams illustrating a manufacturing process of an array substrate for a transverse electric field type liquid crystal display device according to a tenth embodiment of the present invention. FIGS. 19A to 19F are plan views and FIGS. 20A to 20F. Is a cross-sectional view showing a section cut along the cutting line " XX-XX "

<Description of the symbols for the main parts of the drawings>

316: common electrode 330: data wiring

336 pixel electrode AA opening region

EP: Edge P: Pixel Area

PP1, PP2: first and second protrusions PP: protrusions

T: thin film transistor

Claims (21)

A gate wiring formed on the first substrate in a first direction; A data line formed in a second direction crossing the first direction; A thin film transistor formed at an intersection point of the gate line and the data line; A common electrode formed toward the first direction; A connection line connected to the common electrode and formed in the second direction; A common wiring connected to the common electrode through the connection wiring; A pixel electrode formed to be spaced apart from the common electrode in a direction corresponding to the common electrode and connected to the thin film transistor; A drawing line connected to the pixel electrode and overlapping in a state in which a connecting line and an insulator are interposed in the second direction; A second substrate disposed opposite the first substrate; Liquid crystal layer interposed between the first and second substrates And a separation section between the common electrode and the pixel electrode is defined as an opening region, and a protrusion extending from at least one of the common electrode and the pixel electrode is positioned at a short edge portion of the opening region. Transverse electric field type liquid crystal display device. The method of claim 1, The transverse electric field type liquid crystal display device of the protrusions, wherein a region covering the uniaxial edge portion of the opening region is formed within a range not overlapping with a common electrode or a pixel electrode defining a neighboring opening region. The method of claim 1, And the protrusions are formed to correspond to half of the region in the minor direction edge portion. The method of claim 1, And a protruding surface of the protruding portion has a parallel surface structure. A plurality of gate wirings formed on the first substrate in a first direction; A plurality of data lines formed in a second direction crossing the first direction; A plurality of thin film transistors formed at intersections of the plurality of gate lines and data lines; A common electrode formed toward the first direction; A connection line connected to the common electrode and formed in the second direction; A common wiring connected to the common electrode through the connection wiring; A pixel electrode formed to be spaced apart from the common electrode in a direction corresponding to the common electrode and connected to the thin film transistor; A drawing line connected to the pixel electrode and overlapping in a state in which a connecting line and an insulator are interposed in the second direction; A second substrate disposed opposite the first substrate; Liquid crystal layer interposed between the first and second substrates And the pixel electrode adjacent to the front gate line includes an extension pattern covering a region including a spaced interval from the front gate line. The method of claim 5, The separation section between the common electrode and the pixel electrode is defined as an opening region, and a transverse field type liquid crystal display in which two protruding portions extending from at least one of the common electrode and the pixel electrode are located at two edge portions of the opening region. Device. The method of claim 5, And the extension pattern overlaps the front gate line. The method of claim 7, wherein And the extension pattern overlaps the entire front gate line in a range not shorted with the pixel electrode formed in the pixel region including the front gate line. The method of claim 7, wherein And the extension pattern overlaps a portion of the front end gate wiring. The method of claim 5, And the extension pattern forms an outermost common electrode and an opening region of the common electrodes. The method of claim 5, And the extension pattern overlaps the outermost common electrode of the common electrodes. The method of claim 10, And the extension pattern overlaps the entire front gate line in a range not shorted with the pixel electrode formed in the pixel region including the front gate line. A gate wiring formed on the first substrate in a first direction; A data line formed in a second direction crossing the first direction; A thin film transistor formed at an intersection point of the gate line and the data line; A common electrode formed to be inclined in one direction from the first direction; A connection line connected to the common electrode and formed in the second direction; A common wiring connected to the common electrode through the connection wiring; A pixel electrode formed in a direction corresponding to the common electrode, spaced apart from the common electrode at a predetermined interval, connected to the thin film transistor, and formed to be inclined with the one direction with respect to the first direction; A drawing line connected to the pixel electrode and overlapping in a state in which a connecting line and an insulator are interposed in the second direction; A second substrate disposed opposite the first substrate; Liquid crystal layer interposed between the first and second substrates And a separation section between the common electrode and the pixel electrode is defined as an opening region, and the opening region has a domain division structure in which liquid crystal molecules are arranged in different directions. The method of claim 13, And a protruding portion extending from at least one of the common electrode and the pixel electrode is located at both edge portions of the opening region in the minor axis direction. The method of claim 13, And the opening region has a two domain structure. The method of claim 13, And a first capacitor electrode connected to the pixel electrode and a second capacitor electrode connected to the common electrode are sequentially overlapped with each other in an insulator. The method of claim 16, In the interdomain division area, an outermost first transverse electric field electrode and an opening area for each domain adjacent to the interdomain division area are formed, and first and second capacitor electrodes are sequentially formed, and the first and second capacitors are sequentially formed. A transverse electric field liquid crystal display device, wherein an electrode forming the transverse electric field with the first transverse electric field electrode has an area larger than that of another capacitor electrode. Forming a gate wiring on the substrate in a first direction; Forming a common electrode toward the first direction, forming a connection wire connected to the common electrode in a second direction crossing the first direction, and forming a common wire connected to the common electrode through the connection wire Wow; Forming a data line in the second direction; Forming a thin film transistor at an intersection point of the gate line and the data line; Forming a pixel electrode toward the first direction to be spaced apart from the common electrode at a predetermined interval, and forming a drawing wiring overlapping the connection wiring in the second direction and connected to the thin film transistor; And a separation area between the common electrode and the pixel electrode is defined as an opening area, and a protrusion extending from any one of the common electrode and the pixel electrode is positioned at an edge portion of the opening area. A method of manufacturing an array substrate for a transverse electric field liquid crystal display device. The method of claim 18, The pixel electrode and the common electrode may be formed to be inclined at a range of 0 ° to 90 ° with respect to the first direction. The method of claim 19, The pixel electrode and the common electrode are inclined in the range of 0 ° ~ 45 ° manufacturing method of an array substrate for a transverse electric field type liquid crystal display device. The method of claim 18, And a protruding surface of the protruding portion has an inclined surface structure or a parallel surface structure.