KR20050067317A - Pattern forming method and fabrication method for tft and lcd using the same - Google Patents

Abstract

The pattern forming method according to the present invention comprises the steps of forming a dry film resist (DFR) layer on the substrate; Using heat transfer means having a pattern shape to be formed, applying heat to the DFR layer according to the pattern shape formed on the heat transfer means; And performing development on the DFR layer to remove the unheated portion from the heat transfer means and to form a pattern in the DFR layer; It includes.

According to the present invention, the heat transfer means is configured to rotate in the shape of a roller, the surface of the roller is formed to protrude a pattern to be formed, the projected pattern shape is maintained at a predetermined temperature, the surface of the DFR layer is rotated Heat is transferred and cured by contact with the surface pattern of the roller.

In addition, the method for manufacturing a thin film transistor according to the present invention, in order to form a thin film transistor by sequentially patterning and laminating a gate electrode, a gate insulating film, an active layer, a source / drain electrode on a substrate, using a heat transfer means to a predetermined shape A patterned dry film resist (DFR) layer is formed, and the resulting etching process is performed to form a gate electrode, an active layer, and a source / drain electrode, respectively.

Description

Pattern forming method and manufacturing method of thin film transistor and liquid crystal display using the same {Pattern forming method and fabrication method for TFT and LCD using the same}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a liquid crystal display, and in particular, in forming a predetermined pattern layer for performing an etching process, a pattern forming method for increasing productivity and a thin film transistor and a liquid crystal using the same A display device manufacturing method.

Recently, as the information society has changed rapidly, the necessity of a flat panel display having excellent characteristics such as thinness, light weight, and low power consumption has emerged. Among them, liquid crystal display devices having excellent color reproducibility, etc. are actively active. Is being developed.

As is known, a liquid crystal display is formed by arranging two substrates each having electrodes formed on one side thereof so that the surfaces on which the two electrodes are formed face each other and injecting a liquid crystal material between the two substrates. In addition, the liquid crystal display device is a device for representing an image by changing the transmittance of light by moving the liquid crystal molecules by an electric field generated by applying a voltage to the two electrodes.

The lower substrate of the liquid crystal display device is an array substrate including a thin film transistor for applying a signal to a pixel electrode, and is formed by repeating a process of forming a metal film and an insulating film and then etching the photo. In addition, the upper substrate of the liquid crystal display device is a substrate including a color filter, in which three colors of red (R), green (G), and blue (B) are sequentially arranged.

1 is a diagram schematically illustrating a configuration of a general liquid crystal display device.

Referring briefly to FIG. 1, a general liquid crystal display device includes a TFT substrate on which a TFT array is formed, a color filter substrate on which a color filter is arranged, a liquid crystal and an image injected between the TFT substrate and the color filter substrate. And a back light for supplying light for display.

Here, the TFT array formed on the TFT substrate serves to transmit and control an electrical signal, and the liquid crystal controls the degree of light transmission by changing the molecular structure according to the applied voltage. The light controlled through the above process passes through the color filter substrate and appears in a desired color and image.

In the process of manufacturing such a liquid crystal display device, a sealing material enters between the color filter substrate and the TFT substrate. Such a sealing material bonds the color filter substrate and the TFT substrate, and also seals the liquid crystal injected between the color filter substrate and the TFT substrate so as not to leak out.

In forming the TFT substrate and the color filter substrate, the TFT substrate and the color filter substrate are each formed by stacking a plurality of layers, and each layer is formed by patterning a predetermined shape. In this case, in order to form each layer in a predetermined shape, the target layer may be patterned into a predetermined shape by patterning and forming a resist layer on the target layer, and performing etching in a state where the resist layer is formed. In this case, a photo resist may be used as a material for forming the resist layer, or a dry film resist (DFR) may be used.

2 will be briefly described with reference to FIG. 2. 2 is a flowchart illustrating a pattern forming method according to the prior art. For example, a process of forming a gate electrode on a TFT substrate using the pattern forming method shown in FIG. 2 can be described as follows.

First, a metal film for forming a gate electrode is formed on a substrate. Then, a DFR layer is laminated on the metal film (step 201).

Thereafter, a mask in which a predetermined pattern is formed is placed on the DFR layer, and exposure is performed using an exposure apparatus (step 202). In this case, the light may be divided into a region irradiated with light and an unirradiated region, and a region hardened in the same shape as a predetermined pattern formed on the mask is formed in the DFR layer.

Then, by developing in the exposed state to remove the uncured region of the DFR layer, the same pattern as the predetermined pattern formed on the mask is formed on the DFR layer (step 203).

Subsequently, when the resultant is etched, the metal film in the region where the DFR layer is not formed is etched to form a gate metal by patterning the metal film on the substrate. Thereafter, the DFR layer on the substrate is removed and the next process for forming the TFT is performed.

On the other hand, when performing such a process is to be irradiated with light using an exposure machine, the use of an exposure machine costs a lot of facility investment, there is a disadvantage that takes a long process time. Accordingly, research is being conducted on a method for reducing process time and simplifying pattern formation.

SUMMARY OF THE INVENTION An object of the present invention is to provide a pattern forming method which is simple and can increase productivity in forming a predetermined pattern layer for performing an etching process.

Another object of the present invention is to provide a method for manufacturing a thin film transistor and a liquid crystal display device using a pattern forming method that can increase productivity in forming a predetermined pattern layer for performing an etching process.

In order to achieve the above object, the pattern forming method according to the present invention comprises the steps of forming a dry film resist (DFR) layer on the substrate; Applying heat to the DFR layer according to the pattern shape formed on the heat transfer means by using the heat transfer means provided with the pattern shape to be formed; And performing development on the DFR layer to remove a portion to which heat is not applied from the heat transfer means and to form a pattern on the DFR layer. Its features are to include.

According to the present invention, the heat transfer means is configured to rotate in the shape of a roller, the surface to be formed is a pattern to be formed protruding, the projected pattern shape is maintained by a predetermined temperature, the surface of the DFR layer Is characterized in that heat is transferred and hardened by contact with the surface pattern of the rotating roller.

In addition, the thin film transistor manufacturing method according to the present invention in order to achieve the above another object, the first metal film is deposited on the substrate, and the DFR (patterned in a predetermined shape using a heat transfer means on the deposited first metal film) Forming a dry film resist layer; Etching the resultant and removing the patterned DFR layer to form a gate electrode; Forming a gate insulating film on the gate electrode; Forming a semiconductor film on the gate insulating film, and forming a DFR layer patterned into a predetermined shape on the semiconductor film by using heat transfer means; Etching the resultant and removing the patterned DFR layer to form an active layer; Depositing a second metal film on the active layer and forming a patterned DFR layer on the deposited second metal film by using a heat transfer means; And etching the resultant to form a source electrode and a drain electrode by removing the patterned DFR layer. Its features are to include.

In addition, the thin film transistor manufacturing method according to the present invention in order to achieve the above another object, in order to manufacture a thin film transistor by sequentially patterning and laminating a gate electrode, a gate insulating film, an active layer, a source / drain electrode on a substrate, It is characterized by forming a DFR (Dry Film Resist) layer patterned into a predetermined shape using a heat transfer means, and performing the etching process on the resultant to form the gate electrode, the active layer, and the source / drain electrodes, respectively. .

In addition, the liquid crystal display device manufacturing method according to the present invention in order to achieve the above another object, the first metal film is deposited on a substrate, the DFR patterned in a predetermined shape by using a heat transfer means on the deposited first metal film Forming a dry film resist layer; Etching the resultant and removing the patterned DFR layer to form a gate electrode; Forming a gate insulating film on the gate electrode; Forming a semiconductor film on the gate insulating film, and forming a DFR layer patterned into a predetermined shape on the semiconductor film by using heat transfer means; Etching the resultant and removing the patterned DFR layer to form an active layer; Depositing a second metal film on the active layer, and forming a patterned DFR layer on the deposited second metal film by using a heat transfer means to a predetermined shape; Etching the resultant and removing the patterned DFR layer to form a source electrode and a drain electrode; Forming a protective film on the resultant, and forming a DFR layer patterned into a predetermined shape by using heat transfer means on the protective film; Etching the resultant and removing the patterned DFR layer to form a drain contact hole; Depositing a third metal film electrically connected to the drain contact hole on the passivation layer, and forming a DFR layer patterned into a predetermined shape on the passivation layer using heat transfer means; And etching the resultant, and removing the patterned DFR layer to form a pixel electrode. Its features are to include.

In addition, in order to achieve the above object, the liquid crystal display device manufacturing method according to the present invention, by sequentially patterning and laminating a gate electrode, a gate insulating film, an active layer, a source electrode and a drain electrode, a protective film, a pixel electrode on a substrate In manufacturing a liquid crystal display device, a dry film resist (DFR) layer patterned into a predetermined shape is formed by using a heat transfer means, and an etching process is performed on the resultant to form the gate electrode, the active layer, the source electrode and the drain electrode, Its characteristics are that it forms a pixel electrode, respectively.

According to the present invention, it is possible to manufacture a thin film transistor and a liquid crystal display device more simply by providing a pattern forming method which can simplify the productivity in forming a predetermined pattern layer for performing an etching process. This has the advantage of improving output.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

3 is a flowchart illustrating a pattern forming method according to the present invention.

Referring to Figure 3 describes the pattern forming method according to the present invention. Here, a process of forming the gate electrode on the TFT substrate constituting the liquid crystal display device will be described as an example.

First, a metal film for forming a gate electrode is deposited on a substrate. A dry film resist (DFR) layer is stacked on the metal film (step 301).

Then, heat is applied to the DFR layer according to the pattern shape formed on the heat transfer means by using the heat transfer means provided with the pattern shape to be formed (step 302). In this case, a predetermined region of the DFR layer, to which heat is transferred by the heat transfer means, is cured, thereby creating a region that is cured in the same shape as a predetermined pattern formed in the heat transfer means.

Here, the heat transfer means is formed with a predetermined pattern in a concave-convex shape, and by maintaining the protruding pattern shape at a predetermined temperature, heat can be transferred only to a desired region of the DFR layer in contact with the protruding pattern shape of the heat transfer means. Will be. At this time, the heat transfer means to control the temperature in the range of 130 ~ 200 ℃. Since this is a temperature range set in consideration of the characteristics of the DFR layer, when the physical properties of the resist layer are changed, the holding temperature may be changed according to the corresponding physical properties.

Then, the development is performed in a state where the partial region is cured to remove the uncured region of the DFR layer, thereby forming the same pattern as the predetermined pattern formed on the heat transfer means in the DFR layer (step 303). .

Subsequently, when the resultant is etched, the metal film in the region where the DFR layer is not formed is etched to form a gate metal by patterning the metal film on the substrate. Thereafter, the DFR layer on the substrate is removed and the next process for forming the TFT is performed.

4, a process of forming a pattern using the heat transfer means according to the present invention will be briefly described. 4 is a view conceptually illustrating a state in which a DFR lamination process and a DFR patterning process are performed by the pattern forming method according to the present invention.

As shown in FIG. 4, in order to perform the pattern forming method according to the present invention, first, a DFR 405 must be stacked on a substrate 403. In this case, the substrate 403 may be moved to the DFR lamination process region 410 by a substrate transfer means 401, for example, a conveyor system, and supplied to the DFR lamination rollers 407a and 407b. In this case, the DFR lamination rollers 407a and 407b can form a DFR layer on the substrate 403 by pressing the DFR 405 onto the substrate 403 to be supplied.

Subsequently, the substrate 403 having the DFR 405 stacked thereon is supplied to the DFR patterning rollers 409a and 409b of the DFR patterning process region 420 by the substrate transfer means 401. At this time, the substrate 403 in which the DFR 405 is stacked is in contact with the protruding pattern formed on the surface of the upper DFR patterning roller 409b in the process of passing through the DFR patterning rollers 409a and 409b.

Here, a pattern to be formed is protruded on the surface of the upper DFR patterning roller 409b, and the protruding pattern shape is configured to be maintained at a predetermined temperature. Accordingly, the surface of the DFR 405 is to transmit heat and harden by contact with the surface pattern of the rotating upper DFR patterning roller 409b.

Thereafter, the DFR region that is not cured through the developing process is removed, thereby patterning the DFR 405 in the same shape as the pattern formed on the surface of the upper DFR patterning roller 409b.

On the other hand, such a pattern forming method can be very useful for manufacturing a thin film transistor and a liquid crystal display device. In particular, since the wiring width of the thin film transistor and the liquid crystal display device employed in the large-area television has a resolution of approximately 10 to 20 µm, it is possible to sufficiently form a pattern having a desired shape using heat transfer means.

Therefore, according to the present invention, there is no need for a separate exposure machine as compared with the case of performing patterning using a conventional photolithography method, thereby reducing the manufacturing cost in terms of cost and also reducing the processing time.

Then, the process of manufacturing the thin film transistor and the liquid crystal display using the heat transfer means will be briefly described. As is known, the process of manufacturing the TFT substrate of the liquid crystal display device includes the process of manufacturing the thin film transistor, and therefore, the description will be made here on the basis of the process of manufacturing the TFT substrate of the liquid crystal display device.

In other words, according to the present invention, the gate electrode, the gate insulating film, the active layer, the source electrode and the drain electrode, the protective film, and the pixel electrode are sequentially patterned and stacked on the substrate to manufacture a TFT substrate of the liquid crystal display device. The TFT substrate of the liquid crystal display device is formed by forming a DFR layer patterned into a predetermined shape by a pattern forming method and etching the resultant to form the gate electrode, the active layer, the source electrode and the drain electrode, and the pixel electrode, respectively. It becomes possible to manufacture.

Meanwhile, in manufacturing a TFT substrate of a liquid crystal display device, various manufacturing methods are known depending on the number of steps for forming a pattern, which will be briefly described based on one example.

First, a first metal film is deposited on a substrate, and a DFR layer patterned in a predetermined shape is formed on the deposited first metal film by using a pattern forming method by heat transfer means. Then, the resultant is etched and the patterned DFR layer is removed to form a gate electrode.

Thereafter, a gate insulating film is formed on the gate electrode. In addition, a semiconductor film is formed on the gate insulating film, and a patterned DFR layer is formed on the semiconductor film by using a pattern forming method by heat transfer means, and the resultant is etched and patterned. The DFR layer is removed to form an active layer.

Subsequently, a second metal film is deposited on the active layer, and a patterned DFR layer is formed on the deposited second metal film in a predetermined shape by using a pattern forming method by heat transfer means, and the etching of the resultant is performed. And patterned DFR layer to form a source electrode and a drain electrode.

In addition, by forming a protective film on the resultant, by using a pattern formation method by a heat transfer means, to form a patterned DFR layer on the protective film, and to perform etching on the resultant, the patterned DFR layer Is removed to form a drain contact hole.

And depositing a third metal film electrically connected to the drain contact hole on the passivation layer, and forming a patterned DFR layer on the passivation layer using a pattern forming method by a heat transfer means, and forming the resultant DFR layer. It is possible to manufacture the TFT substrate of the liquid crystal display by performing an etching process and removing the patterned DFR layer to form a pixel electrode.

As described above, according to the pattern forming method and the method of manufacturing the thin film transistor and the liquid crystal display device using the same according to the present invention, in forming a predetermined pattern layer for the etching process, it is simple and pattern formation that can increase productivity By providing the method, the thin film transistor and the liquid crystal display device can be manufactured more simply, and there is an advantage that the yield can be improved.

1 is a view schematically showing a configuration of a general liquid crystal display device.

2 is a flow chart showing a pattern formation method according to the prior art.

3 is a flow chart showing a pattern forming method according to the present invention.

4 is a view conceptually illustrating a state in which a DFR lamination process and a DFR patterning process are performed by the pattern forming method according to the present invention.

<Explanation of symbols for the main parts of the drawings>

401 ... substrate transfer means 403 ... substrate

405 ... DFR 407a, 407b ... DFR Lamination Roller

409a, 409b ... DFR Patterning Rollers 410 ... DFR Lamination Process Area

420 ... DFR patterning process area

Claims (7)

Forming a dry film resist (DFR) layer on the substrate; Applying heat to the DFR layer according to the pattern shape formed on the heat transfer means by using the heat transfer means provided with the pattern shape to be formed; And Performing development on the DFR layer to remove a portion where heat is not applied from the heat transfer means and to form a pattern on the DFR layer; Pattern forming method comprising a. The method of claim 1, The heat transfer means is configured to rotate in a roller shape, and a pattern to be formed is formed on the surface of the roller to protrude, and the protruding pattern shape is maintained at a predetermined temperature, whereby the surface of the DFR layer is A pattern forming method, characterized in that heat is transferred and cured by contact with a surface pattern. The method of claim 1, The heat transfer means is a pattern forming method characterized in that the temperature is controlled in the range of 130 ~ 200 ℃. Dry film resist (DFR) patterned to a predetermined shape on the deposited first metal film by depositing a first metal film on a substrate and using the pattern forming method according to any one of claims 1 to 3. Forming a layer; Etching the resultant and removing the patterned DFR layer to form a gate electrode; Forming a gate insulating film on the gate electrode; Forming a semiconductor film on the gate insulating film, and forming a patterned DFR layer on the semiconductor film using a pattern forming method according to any one of claims 1 to 3; Etching the resultant and removing the patterned DFR layer to form an active layer; A second metal film is deposited on the active layer, and a patterned DFR layer is formed on the deposited second metal film in a predetermined shape by using the pattern forming method according to any one of claims 1 to 3. Doing; And Etching the resultant and removing the patterned DFR layer to form a source electrode and a drain electrode; Thin film transistor manufacturing method comprising a. In manufacturing a thin film transistor by sequentially patterning and laminating a gate electrode, a gate insulating film, an active layer, and a source / drain electrode on a substrate, A dry film resist (DFR) layer patterned into a predetermined shape is formed by the pattern forming method according to any one of claims 1 to 3, and an etching process is performed on the resultant to form the gate electrode, the active layer, A thin film transistor manufacturing method comprising forming a source / drain electrode, respectively. Dry film resist (DFR) patterned to a predetermined shape on the deposited first metal film by depositing a first metal film on a substrate and using the pattern forming method according to any one of claims 1 to 3. Forming a layer; Etching the resultant and removing the patterned DFR layer to form a gate electrode; Forming a gate insulating film on the gate electrode; Forming a semiconductor film on the gate insulating film, and forming a patterned DFR layer on the semiconductor film using a pattern forming method according to any one of claims 1 to 3; Etching the resultant and removing the patterned DFR layer to form an active layer; A second metal film is deposited on the active layer, and a patterned DFR layer is formed on the deposited second metal film in a predetermined shape by using the pattern forming method according to any one of claims 1 to 3. Making a step; Etching the resultant and removing the patterned DFR layer to form a source electrode and a drain electrode; Forming a protective film on the resultant, and forming a patterned DFR layer on the protective film using a pattern forming method according to any one of claims 1 to 3; Etching the resultant and removing the patterned DFR layer to form a drain contact hole; A third metal film electrically connected to the drain contact hole is deposited on the passivation layer, and is patterned into a predetermined shape on the passivation layer using the pattern forming method according to any one of claims 1 to 3. Forming a DFR layer; And Etching the resultant, and removing the patterned DFR layer to form a pixel electrode; Liquid crystal display device manufacturing method comprising a. In manufacturing a liquid crystal display device by sequentially patterning and stacking a gate electrode, a gate insulating film, an active layer, a source electrode and a drain electrode, a protective film, and a pixel electrode on a substrate, A dry film resist (DFR) layer patterned into a predetermined shape is formed by the pattern forming method according to any one of claims 1 to 3, and an etching process is performed on the resultant to form the gate electrode, the active layer, A source electrode, a drain electrode, and a pixel electrode are formed, respectively.